Showing 1–50 of 54 results for author: Neumaier, D

Variability and Reliability of Graphene Field-Effect Transistors with CaF2 Insulators

Authors: Yury Yu. Illarionov, Theresia Knobloch, Burkay Uzlu, Alexander G. Banshikov, Iliya A. Ivanov, Viktor Sverdlov, Mikhail I. Vexler, Michael Waltl, Zhenxing Wang, Bibhas Manna, Daniel Neumaier, Max C. Lemme, Nikolai S. Sokolov, Tibor Grasser

Abstract: Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate insulators which ideally should form atomically flat interfaces with graphene and at the same time contain small densities of traps to maintain high device stabi… ▽ More Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate insulators which ideally should form atomically flat interfaces with graphene and at the same time contain small densities of traps to maintain high device stability. Previously used amorphous oxides, such as SiO2 and Al2O3, however, typically suffer from oxide dangling bonds at the interface, high surface roughness and numerous border oxide traps. In order to address these challenges, here we use for the first time 2nm thick epitaxial CaF2 as a gate insulator in GFETs. By analyzing device-to-device variability for over 200 devices fabricated in two batches, we find that tens of them show similar gate transfer characteristics. Our statistical analysis of the hysteresis up to 175C has revealed that while an ambient-sensitive counterclockwise hysteresis can be present in some devices, the dominant mechanism is thermally activated charge trap** by border defects in CaF2 which results in the conventional clockwise hysteresis. We demonstrate that both the hysteresis and bias-temperature instabilities in our GFETs with CaF2 are comparable to similar devices with SiO2 and Al2O3. In particular, we achieve a small hysteresis below 0.01 V for equivalent oxide thickness (EOT) of about 1 nm at the electric fields up to 15 MV/cm and sweep times in the kilosecond range. Thus, our results demonstrate that crystalline CaF2 is a promising insulator for highly-stable GFETs. △ Less

Submitted 20 September, 2023; originally announced September 2023.

CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors

Authors: Daniel S. Schneider, Leonardo Lucchesi, Eros Reato, Zhenyu Wang, Agata Piacentini, Jens Bolten, Damiano Marian, Enrique G. Marin, Aleksandra Radenovic, Zhenxing Wang, Gianluca Fiori, Andras Kis, Giuseppe Iannaccone, Daniel Neumaier, Max C. Lemme

Abstract: Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metal… ▽ More Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metals. We present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene with low contact resistances of about 9 k$Ω$$μ$m and high on/off current ratios of 10${^8}$. We also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a strong performance enhancement by means of layer optimizations that would make transistors promising for use in future logic circuits. △ Less

Submitted 5 April, 2024; v1 submitted 3 April, 2023; originally announced April 2023.

Comments: 39 pages

Journal ref: npj 2D Materials and Applications, 8, 35, 2024

Graphene-Quantum Dot Hybrid Photodetectors from 200 mm Wafer Scale Processing

Authors: Sha Li, Zhenxing Wang, Bianca Robertz, Daniel Neumaier, Oihana Txoperena, Arantxa Maestre, Amaia Zurutuza, Chris Bower, Ashley Rushton, Yinglin Liu, Chris Harris, Alexander Bessonov, Surama Malik, Mark Allen, Ivonne Medina-Salazar, Tapani Ryhänen, Max C. Lemme

Abstract: A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistical analysis of electric data shows a high yield (96%) and low variation of the 200 mm scale fabrication. The GFET-QD devices deliver responsivities of 10${^5}$ - 10${^6}$ V/W in a wavelength range from 400 to 1800 nm, at… ▽ More A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistical analysis of electric data shows a high yield (96%) and low variation of the 200 mm scale fabrication. The GFET-QD devices deliver responsivities of 10${^5}$ - 10${^6}$ V/W in a wavelength range from 400 to 1800 nm, at up to 100 frames per second. Spectral sensitivity compares well to that obtained using similar GFET-QD photodetectors. The device concept enables gate-tunable suppression or enhancement of the photovoltage, which may be exploited for electric shutter operation by toggling between the signal capture and shutter states. The devices show good stability at a wide operation range and external quantum efficiency of 20% in the short-wavelength infrared range. Furthermore, an integration solution with complementary metal-oxide-semiconductor technology is presented to realize image-sensor-array chips and a proof-of-concept image system. This work demonstrates the potential for the volume manufacture of infrared photodetectors for a wide range of imaging applications. △ Less

Submitted 1 March, 2023; originally announced March 2023.

Comments: 29 pages

Plasma-enhanced atomic layer deposition of Al$_2$O$_3$ on graphene using monolayer hBN as interfacial layer

Authors: Barbara Canto, Martin Otto, Michael J. Powell, Vitaliy Babenko, Aileen O Mahony, Harm Knoops, Ravi S. Sundaram, Stephan Hofmann, Max C. Lemme, Daniel Neumaier

Abstract: The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphe… ▽ More The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphene lattice caused by the plasma deposition. The results show that a monolayer of hBN in combination with an optimized deposition process can effectively protect graphene from damage, while significant damage was observed without an hBN layer. Electrical characterization of double gated graphene field effect devices confirms that the graphene did not degrade during the plasma deposition of Al$_2$O$_3$. The leakage current densities were consistently below 1 nA/mm for electric fields across the insulators of up to 8 MV/cm, with irreversible breakdown happening above. Such breakdown electric fields are typical for Al$_2$O$_3$ and can be seen as an indicator for high quality dielectric films. △ Less

Submitted 24 August, 2022; originally announced August 2022.

Journal ref: Adv. Mater. Technol.2021, 6, 2100489

Zero Bias Power Detector Circuits based on MoS$_2$ Field Effect Transistors on Wafer-Scale Flexible Substrates

Authors: Eros Reato, Paula Palacios, Burkay Uzlu, Mohamed Saeed, Annika Grundmann, Zhenyu Wang, Daniel S. Schneider, Zhenxing Wang, Michael Heuken, Holger Kalisch, Andrei Vescan, Alexandra Radenovic, Andras Kis, Daniel Neumaier, Renato Negra, Max C. Lemme

Abstract: We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $μ$m thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS$_2$ sheets, grown with different processes and showing dif… ▽ More We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $μ$m thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS$_2$ sheets, grown with different processes and showing different thicknesses, are analyzed and compared from the single device fabrication and characterization steps to the circuit level. The power detector prototypes exploit the nonlinearity of the transistors above the cut-off frequency of the devices. The proposed detectors are designed employing a transistor model based on measurement results. The fabricated circuits operate in Ku-band between 12 and 18 GHz, with a demonstrated voltage responsivity of 45 V/W at 18 GHz in the case of monolayer MoS2 and 104 V/W at 16 GHz in the case of multilayer MoS$_2$, both achieved without applied DC bias. They are the best performing power detectors fabricated on flexible substrate reported to date. The measured dynamic range exceeds 30 dB outperforming other semiconductor technologies like silicon complementary metal oxide semiconductor (CMOS) circuits and GaAs Schottky diodes. △ Less

Submitted 9 April, 2022; v1 submitted 9 February, 2022; originally announced February 2022.

Comments: 28 pages

Journal ref: Advanced Materials, 202108469, 2022

Stacking polymorphism in PtSe$_2$ drastically affects its electromechanical properties

Authors: Roman Kempt, Sebastian Lukas, Oliver Hartwig, Maximilian Prechtl, Agnieszka Kuc, Thomas Brumme, Sha Li, Daniel Neumaier, Max C. Lemme, Georg Duesberg, Thomas Heine

Abstract: PtSe$_2$ is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. We show that stacking phases other than the AA-stacking in the 1T phase become thermodynamically available at elevated temperatures. We show that these… ▽ More PtSe$_2$ is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. We show that stacking phases other than the AA-stacking in the 1T phase become thermodynamically available at elevated temperatures. We show that these can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize these stacking phases. Lastly, we estimate their gauge factors, which vary strongly and significantly impact the performance of a nanoelectromechanical device. △ Less

Submitted 4 January, 2022; v1 submitted 15 December, 2021; originally announced December 2021.

Terahertz rectennas on flexible substrates based on one-dimensional metal-insulator-graphene diodes

Authors: Andreas Hemmetter, Xinxin Yang, Zhenxing Wang, Martin Otto, Burkay Uzlu, Marcel Andree, Ullrich Pfeiffer, Andrei Vorobiev, Jan Stake, Max C. Lemme, Daniel Neumaier

Abstract: Flexible energy harvesting devices fabricated in scalable thin-film processes are important components in the field of wearable electronics and the Internet of Things. We present a flexible rectenna based on a one-dimensional junction metal-insulator-graphene diode, which offers low-noise power detection at terahertz (THz) frequencies. The rectennas are fabricated on a flexible polyimide film in a… ▽ More Flexible energy harvesting devices fabricated in scalable thin-film processes are important components in the field of wearable electronics and the Internet of Things. We present a flexible rectenna based on a one-dimensional junction metal-insulator-graphene diode, which offers low-noise power detection at terahertz (THz) frequencies. The rectennas are fabricated on a flexible polyimide film in a scalable process by photolithography using graphene grown by chemical vapor deposition. A one-dimensional junction area reduces the junction capacitance and enables operation in the D-band (110 - 170 GHz). The rectenna on polyimide shows a maximum voltage responsivity of 80 V/W at 167 GHz in free space measurements and minimum noise equivalent power of 80 pW/$\sqrt{\text{Hz}}$. △ Less

Submitted 22 June, 2021; originally announced June 2021.

Comments: 20 pages, 4 figures, 1 table

Journal ref: ACS Applied Electronic Materials 3, 9, 3747-3753, 2021

Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning

Authors: Theresia Knobloch, Burkay Uzlu, Yury Yu. Illarionov, Zhenxing Wang, Martin Otto, Lado Filipovic, Michael Waltl, Daniel Neumaier, Max C. Lemme, Tibor Grasser

Abstract: Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the interaction of charge carriers originating from the 2D semiconductors with defects in the surrounding insulating materials. The resulting dynamically trapped char… ▽ More Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the interaction of charge carriers originating from the 2D semiconductors with defects in the surrounding insulating materials. The resulting dynamically trapped charges are particularly relevant in field effect transistors (FETs) and can lead to a large hysteresis, which endangers stable circuit operation. Based on the notion that charge trap** is highly sensitive to the energetic alignment of the channel Fermi-level with the defect band in the insulator, we propose to optimize device stability by deliberately tuning the channel Fermi-level. Our approach aims to minimize the amount of electrically active border traps without modifying the total number of traps in the insulator. We demonstrate the applicability of this idea by using two differently doped graphene layers in otherwise identical FETs with Al$_2$O$_3$ as a gate oxide mounted on a flexible substrate. Our results clearly show that by increasing the distance of the Fermi-level to the defect band, the hysteresis is significantly reduced. Furthermore, since long-term reliability is also very sensitive to trapped charges, a corresponding improvement in reliability is both expected theoretically and demonstrated experimentally. Our study paves the way for the construction of more stable and reliable 2D FETs in which the channel material is carefully chosen and tuned to maximize the energetic distance between charge carriers in the channel and the defect bands in the insulator employed. △ Less

Submitted 26 April, 2021; v1 submitted 16 April, 2021; originally announced April 2021.

Comments: 28 pages, 6 figures

Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide

Authors: Sebastian Lukas, Oliver Hartwig, Maximilian Prechtl, Giovanna Capraro, Jens Bolten, Alexander Meledin, Joachim Mayer, Daniel Neumaier, Satender Kataria, Georg S. Duesberg, Max C. Lemme

Abstract: Platinum diselenide (PtSe${_2}$) is a two-dimensional (2D) material with outstanding electronic and piezoresistive properties. The material can be grown at low temperatures in a scalable manner which makes it extremely appealing for many potential electronics, photonics, and sensing applications. Here, we investigate the nanocrystalline structure of different PtSe${_2}$ thin films grown by thermal… ▽ More Platinum diselenide (PtSe${_2}$) is a two-dimensional (2D) material with outstanding electronic and piezoresistive properties. The material can be grown at low temperatures in a scalable manner which makes it extremely appealing for many potential electronics, photonics, and sensing applications. Here, we investigate the nanocrystalline structure of different PtSe${_2}$ thin films grown by thermally assisted conversion (TAC) and correlate them with their electronic and piezoresistive properties. We use scanning transmission electron microscopy for structural analysis, X-ray photoelectron spectroscopy (XPS) for chemical analysis, and Raman spectroscopy for phase identification. Electronic devices are fabricated using transferred PtSe${_2}$ films for electrical characterization and piezoresistive gauge factor measurements. The variations of crystallite size and their orientations are found to have a strong correlation with the electronic and piezoresistive properties of the films, especially the sheet resistivity and the effective charge carrier mobility. Our findings may pave the way for tuning and optimizing the properties of TAC-grown PtSe${_2}$ towards numerous applications. △ Less

Submitted 8 April, 2021; originally announced April 2021.

Journal ref: Advanced Functional Material, 2102929, 2021

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Authors: Zhenxing Wang, Andreas Hemmetter, Burkay Uzlu, Mohamed Saeed, Ahmed Hamed, Satender Kataria, Renato Negra, Daniel Neumaier, Max C. Lemme

Abstract: Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and optoelectronics are highlighted. In particular, advantages of metal-insulator-graphene (MIG) diodes over conventional metal-insulator-metal diodes are discussed with respect to relevant figures-of-merit. The MIG concept is… ▽ More Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and optoelectronics are highlighted. In particular, advantages of metal-insulator-graphene (MIG) diodes over conventional metal-insulator-metal diodes are discussed with respect to relevant figures-of-merit. The MIG concept is extended to 1D diodes. Several experimentally implemented radio frequency circuit applications with MIG diodes as active elements are presented. Furthermore, graphene-silicon Schottky diodes as well as MIG diodes are reviewed in terms of their potential for photodetection. Here, graphene-based diodes have the potential to outperform conventional photodetectors in several key figures-of-merit, such as overall responsivity or dark current levels. Obviously, advantages in some areas may come at the cost of disadvantages in others, so that 2D/3D diodes need to be tailored in application-specific ways. △ Less

Submitted 27 March, 2021; originally announced March 2021.

Journal ref: Advanced Electronic Materials, 2001210, 2021

Evidence for local spots of viscous electron flow in graphene at moderate mobility

Authors: Sayanti Samaddar, Jeff Strasdas, Kevin Janßen, Sven Just, Tjorven Johnsen, Zhenxing Wang, Burkay Uzlu, Sha Li, Daniel Neumaier, Marcus Liebmann, Markus Morgenstern

Abstract: Dominating electron-electron scattering enables viscous electron flow exhibiting hydrodynamic current density patterns such as Poiseuille profiles or vortices. The viscous regime has recently been observed in graphene by non-local transport experiments and map** of the Poiseuille profile. Here, we probe the current-induced surface potential maps of graphene field effect transistors with moderate… ▽ More Dominating electron-electron scattering enables viscous electron flow exhibiting hydrodynamic current density patterns such as Poiseuille profiles or vortices. The viscous regime has recently been observed in graphene by non-local transport experiments and map** of the Poiseuille profile. Here, we probe the current-induced surface potential maps of graphene field effect transistors with moderate mobility using scanning probe microscopy at room temperature. We discover micron-sized large areas appearing close to charge neutrality that show current induced electric fields opposing the externally applied field. By estimating the local scattering lengths from the gate dependence of local in-plane electric fields, we find that electron-electron scattering dominates in these areas as expected for viscous flow. Moreover, we suppress the inverted fields by artificially decreasing the electron-disorder scattering length via mild ion bombardment. These results imply that viscous electron flow is omnipresent in graphene devices, even at moderate mobility. △ Less

Submitted 16 January, 2022; v1 submitted 21 March, 2021; originally announced March 2021.

Comments: 89 pages, 24 figures, published in Nano Letters

Journal ref: Nano Letters (2021) 21 9365--9373

Dispersive sensing of charge states in a bilayer graphene quantum dot

Authors: Luca Banszerus, Samuel Möller, Eike Icking, Corinne Steiner, Daniel Neumaier, Martin Otto, Kenji Watanabe, Takashi Taniguchi, Christian Volk, Christoph Stampfer

Abstract: We demonstrate dispersive readout of individual charge states in a gate-defined few-electron quantum dot in bilayer graphene. We employ a radio frequency reflectometry circuit, where an LC resonator with a resonance frequency close to 280 MHz is directly coupled to an ohmic contact of the quantum dot device. The detection scheme based on changes in the quantum capacitance operates over a wide gate… ▽ More We demonstrate dispersive readout of individual charge states in a gate-defined few-electron quantum dot in bilayer graphene. We employ a radio frequency reflectometry circuit, where an LC resonator with a resonance frequency close to 280 MHz is directly coupled to an ohmic contact of the quantum dot device. The detection scheme based on changes in the quantum capacitance operates over a wide gate-voltage range and allows to probe excited states down to the single-electron regime. Crucially, the presented sensing technique avoids the use of an additional, capacitively coupled quantum device such as a quantum point contact or single electron transistor, making dispersive sensing particularly interesting for gate-defined graphene quantum dots. △ Less

Submitted 13 February, 2021; v1 submitted 11 December, 2020; originally announced December 2020.

Comments: 5 Pages, 4 Figures

Journal ref: Appl. Phys. Lett. 118, 093104 (2021)

Pulsed-gate spectroscopy of single-electron spin states in bilayer graphene quantum dots

Authors: Luca Banszerus, Katrin Hecker, Eike Icking, Stefan Trellenkamp, Florian Lentz, Daniel Neumaier, Kenji Watanabe, Takashi Taniguchi, Christian Volk, Christoph Stampfer

Abstract: Graphene and bilayer graphene quantum dots are promising hosts for spin qubits with long coherence times. Although recent technological improvements make it possible to confine single electrons electrostatically in bilayer graphene quantum dots, and their spin and valley texture of the single particle spectrum has been studied in detail, their relaxation dynamics remains still unexplored. Here, we… ▽ More Graphene and bilayer graphene quantum dots are promising hosts for spin qubits with long coherence times. Although recent technological improvements make it possible to confine single electrons electrostatically in bilayer graphene quantum dots, and their spin and valley texture of the single particle spectrum has been studied in detail, their relaxation dynamics remains still unexplored. Here, we report on transport through a high-frequency gate controlled single-electron bilayer graphene quantum dot. By transient current spectroscopy of single-electron spin states, we extract a lower bound of the spin relaxation time of 0.5~$μ$s. This result represents an important step towards the investigation of spin coherence times in graphene-based quantum dots and the implementation of spin-qubits. △ Less

Submitted 27 January, 2021; v1 submitted 4 December, 2020; originally announced December 2020.

Comments: 6 Pages, 4 Figures

Journal ref: Phys. Rev. B 103, 081404 (2021)

Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride

Authors: Vitaliy Babenko, Ye Fan, Vlad-Petru Veigang-Radulescu, Barry Brennan, Andrew J. Pollard, Oliver Burton, Jack A. Alexander-Webber, Robert S. Weatherup, Barbara Canto, Martin Otto, Daniel Neumaier, Stephan Hofmann

Abstract: Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applications ranging from hyperbolic metasurfaces to room temperature single-photon sources. Cost-effective, scalable and high quality growth techniques for h-BN layers are critically required. We utilise widely-available iron… ▽ More Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applications ranging from hyperbolic metasurfaces to room temperature single-photon sources. Cost-effective, scalable and high quality growth techniques for h-BN layers are critically required. We utilise widely-available iron foils for the catalytic chemical vapour deposition (CVD) of h BN and report on the significant role of bulk dissolved species in h-BN CVD, and specifically, the balance between dissolved oxygen and carbon. A simple pre-growth conditioning step of the iron foils enables us to tailor an error-tolerant scalable CVD process to give exceptionally large h-BN monolayer domains. We also develop a facile method for the improved transfer of as-grown h-BN away from the iron surface by means of the controlled humidity oxidation and subsequent rapid etching of a thin interfacial iron oxide; thus, avoiding the impurities from the bulk of the foil. We demonstrate wafer-scale (2 inch) production and utilise this h-BN as a protective layer for graphene towards integrated (opto) electronic device fabrication. △ Less

Submitted 26 November, 2020; originally announced November 2020.

Journal ref: IOP 2D Materials, Volume 7, Number 2, 024005 (2020)

Electron-hole crossover in gate-controlled bilayer graphene quantum dots

Authors: Luca Banszerus, Alexander Rothstein, Thomas Fabian, Samuel Möller, Eike Icking, Stefan Trellenkamp, Florian Lentz, Daniel Neumaier, Kenji Watanabe, Takashi Taniguchi, Florian Libisch, Christian Volk, Christoph Stampfer

Abstract: Electron and hole Bloch states in gapped bilayer graphene exhibit topological orbital magnetic moments with opposite signs near the band edges, which allows for tunable valley-polarization in an out-of-plane magnetic field. This intrinsic property makes electron and hole quantum dots (QDs) in bilayer graphene interesting for valley and spin-valley qubits. Here we show measurements of the electron-… ▽ More Electron and hole Bloch states in gapped bilayer graphene exhibit topological orbital magnetic moments with opposite signs near the band edges, which allows for tunable valley-polarization in an out-of-plane magnetic field. This intrinsic property makes electron and hole quantum dots (QDs) in bilayer graphene interesting for valley and spin-valley qubits. Here we show measurements of the electron-hole crossover in a bilayer graphene QD, demonstrating the opposite sign of the orbital magnetic moments associated with the Berry curvature. Using three layers of metallic top gates, we independently control the tunneling barriers of the QD while tuning the occupation from the few-hole regime to the few-electron regime, crossing the displacement-field controlled band gap. The band gap is around 25 meV, while the charging energies of the electron and hole dots are between 3-5 meV. The extracted valley g-factor is around 17 and leads to opposite valley polarization for electron and hole states at moderate B-fields. Our measurements agree well with tight-binding calculations for our device. △ Less

Submitted 19 September, 2020; v1 submitted 6 August, 2020; originally announced August 2020.

Electrostatic detection of Shubnikov-de-Haas oscillations in bilayer graphene by Coulomb resonances in gate-defined quantum dots

Authors: Luca Banszerus, Thomas Fabian, Samuel Möller, Eike Icking, Henning Heiming, Stefan Trellenkamp, Florian Lentz, Daniel Neumaier, Martin Otto, Kenji Watanabe, Takashi Taniguchi, Florian Libisch, Christian Volk, Christoph Stampfer

Abstract: A gate-defined quantum dot in bilayer graphene is utilized as a sensitive electrometer for probing the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel region next to the quantum dot oscillates due to the formation of Landau levels. This is experimentally observed as oscillations in the gate-voltage positions of the… ▽ More A gate-defined quantum dot in bilayer graphene is utilized as a sensitive electrometer for probing the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel region next to the quantum dot oscillates due to the formation of Landau levels. This is experimentally observed as oscillations in the gate-voltage positions of the Coulomb resonances of the nearby quantum dot. From the frequency of the oscillations, we extract the charge carrier density in the channel and from the amplitude the shift of the quantum dot potential. We compare these experimental results with an electrostatic simulation of the device and find good agreement. △ Less

Submitted 9 September, 2020; v1 submitted 23 June, 2020; originally announced June 2020.

Comments: 5 Pages, 4 Figures

Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout

Authors: D. De Fazio, B. Uzlu, I. Torre, C. Monasterio, S. Gupta, T. Khodkov, Y. Bi, Z. Wang, M. Otto, M. C. Lemme, S. Goossens, D. Neumaier, F. H. L. Koppens

Abstract: Graphene-based photodetectors have shown responsivities up to 10$^8$A/W and photoconductive gains up to 10$^{8}$ electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity of graphene, which induces a shift of the graphene chemical potential upon absorption, hence modifying its channel resistance. However, due to the semi-metallic nature of graphene, the readout… ▽ More Graphene-based photodetectors have shown responsivities up to 10$^8$A/W and photoconductive gains up to 10$^{8}$ electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity of graphene, which induces a shift of the graphene chemical potential upon absorption, hence modifying its channel resistance. However, due to the semi-metallic nature of graphene, the readout requires dark currents of hundreds of $μ$A up to mA, leading to high power consumption needed for the device operation. Here we propose a novel approach for highly responsive graphene-based photodetectors with orders of magnitude lower dark current levels. A shift of the graphene chemical potential caused by light absorption in a layer of colloidal quantum dots, induces a variation of the current flowing across a metal-insulator-graphene diode structure. Owing to the low density of states of graphene near the neutrality point, the light-induced shift in chemical potential can be relatively large, dramatically changing the amount of current flowing across the insulating barrier, and giving rise to a novel type of gain mechanism. This readout requires dark currents of hundreds of nA up to few $μ$A, orders of magnitude lower than other graphene-based photodetectors, while kee** responsivities of $\sim$70A/W in the infrared, almost two orders of magnitude higher compared to established germanium on silicon and indium gallium arsenide infrared photodetectors. This makes the device appealing for applications where high responsivity and low power consumption are required. △ Less

Submitted 21 May, 2020; originally announced May 2020.

Comments: 14 pages, 7 figures

Journal ref: ACS Nano 14 11897 (2020)

Nanofilm Materials for Devices of Magnetic Field Measurement in Radiation Environment

Authors: I. Bolshakova, P. Horelkin, Ya. Kost, A. Moroz, Y. Mykhashchuk, M. Radishevskiy, F. Shurigin, O. Vasyliev, B. Pavlyk, T. Kuech, Z. Wang, M. Otto, D. Neumaier

Abstract: The prospects of using nanofilms of indium-containing III-V semiconductors, gold and single-layer graphene in magnetic field sensors, intended for application in radiation environment were evaluated on the results of testing in neutron fluxes. Semiconductor sensors are capable of withstanding radiation levels typical for the ITER-type fusion reactors, while gold sensors are stable even under envir… ▽ More The prospects of using nanofilms of indium-containing III-V semiconductors, gold and single-layer graphene in magnetic field sensors, intended for application in radiation environment were evaluated on the results of testing in neutron fluxes. Semiconductor sensors are capable of withstanding radiation levels typical for the ITER-type fusion reactors, while gold sensors are stable even under environment expected in the first fusion power plant DEMO. Graphene is promising for creating sensors that combine high magnetic field sensitivity and high irradiation resistance. △ Less

Submitted 5 May, 2020; originally announced May 2020.

Journal ref: 2020 IEEE 15th International Conference on Advanced Trends in Radioelectronics, Telecommunications and Computer Engineering (TCSET)

Resistance of Hall Sensors Based on Graphene to Neutron Radiation

Authors: I. Bolshakova, Ya. Kost, M. Radishevskyi, F. Shurygin, O. Vasyliev, Z. Wang, D. Neumaier, M. Otto, M. Bulavin, S. Kulikov

Abstract: An in-situ study of Hall sensors based on single-layered graphene in neutron fluxes of a nuclear reactor to the fluence of 1.5e20 n/sq,m was conducted. The sensitivity of the sensors to the magnetic field remained stable throughout the experiment, while the resistance changes correlated with the increase in sample temperature due to radiation heating. The experiment confirmed the theoretical expec… ▽ More An in-situ study of Hall sensors based on single-layered graphene in neutron fluxes of a nuclear reactor to the fluence of 1.5e20 n/sq,m was conducted. The sensitivity of the sensors to the magnetic field remained stable throughout the experiment, while the resistance changes correlated with the increase in sample temperature due to radiation heating. The experiment confirmed the theoretical expectations regarding the high stability of graphene sensors to neutron irradiation. Necessary further improvement of sensor technology to optimize their characteristics, as well as radiation testing to determine the maximum permissible neutron fluence. △ Less

Submitted 5 May, 2020; originally announced May 2020.

Journal ref: Nanomaterials in Biomedical Application and Biosensors (NAP-2019)

Flexible One-Dimensional Metal-Insulator-Graphene Diode

Authors: Zhenxing Wang, Burkay Uzlu, Mehrdad Shaygan, Martin Otto, Mário Ribeiro, Enrique González Marín, Giuseppe Iannaccone, Gianluca Fiori, Mohamed Saeed Elsayed, Renato Negra, Daniel Neumaier

Abstract: In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry deliv… ▽ More In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate. △ Less

Submitted 18 March, 2020; originally announced March 2020.

Journal ref: ACS Applied Electronic Materials, 2019, 1, 945-950

Integrating Graphene into Semiconductor Fabrication Lines

Authors: Daniel Neumaier, Stephan Pindl, Max C. Lemme

Abstract: Electronic and photonic devices based on the two-dimensional material graphene have unique properties, leading to outstanding performance figures-of-merit. Mastering the integration of this new and unconventional material into an established semiconductor fabrication line represents a critical step for pushing it forward towards commercialization. Electronic and photonic devices based on the two-dimensional material graphene have unique properties, leading to outstanding performance figures-of-merit. Mastering the integration of this new and unconventional material into an established semiconductor fabrication line represents a critical step for pushing it forward towards commercialization. △ Less

Submitted 9 December, 2019; originally announced December 2019.

Observation of the spin-orbit gap in bilayer graphene by one-dimensional ballistic transport

Authors: L. Banszerus, B. Frohn, T. Fabian, S. Somanchi, A. Ep**, M. Müller, D. Neumaier, K. Watanabe, T. Taniguchi, F. Libisch, B. Beschoten, F. Hassler, C. Stampfer

Abstract: We report on measurements of quantized conductance in gate-defined quantum point contacts in bilayer graphene that allow the observation of subband splittings due to spin-orbit coupling. The size of this splitting can be tuned from 40 to 80 $μ$eV by the displacement field. We assign this gate-tunable subband-splitting to a gap induced by spin-orbit coupling of Kane-Mele type, enhanced by proximity… ▽ More We report on measurements of quantized conductance in gate-defined quantum point contacts in bilayer graphene that allow the observation of subband splittings due to spin-orbit coupling. The size of this splitting can be tuned from 40 to 80 $μ$eV by the displacement field. We assign this gate-tunable subband-splitting to a gap induced by spin-orbit coupling of Kane-Mele type, enhanced by proximity effects due to the substrate. We show that this spin-orbit coupling gives rise to a complex pattern in low perpendicular magnetic fields, increasing the Zeeman splitting in one valley and suppressing it in the other one. In addition, we observe the existence of a spin-polarized channel of 6 e$^2$/h at high in-plane magnetic field and of signatures of interaction effects at the crossings of spin-split subbands of opposite spins at finite magnetic field. △ Less

Submitted 8 April, 2020; v1 submitted 29 November, 2019; originally announced November 2019.

Comments: 5 pages, 4 figures, Supplement 6 figures

Journal ref: Phys. Rev. Lett. 124, 177701 (2020)

Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

Authors: Pedro Carlos Feijoo, Francisco Pasadas, Marlene Bonmann, Muhammad Asad, Xinxin Yang, Andrey Generalov, Andrei Vorobiev, Luca Banszerus, Christoph Stampfer, Martin Otto, Daniel Neumaier, Jan Stake, David Jiménez

Abstract: It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numerically investigates whether velocity saturation can help to get better current saturation and if that correlates with enhanced fmax. For such a purpose, we used a drift-diffusion simulator that includes several factors t… ▽ More It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numerically investigates whether velocity saturation can help to get better current saturation and if that correlates with enhanced fmax. For such a purpose, we used a drift-diffusion simulator that includes several factors that influence output conductance, especially at short channel lengths and-or large drain bias: short-channel electrostatics, saturation velocity, graphene-dielectric interface traps, and self-heating effects. As a testbed for our investigation, we analyzed fabricated GFETs with high extrinsin cutoff frequency fT,x (34 GHz) and fmax (37 GHz). Our simulations allow for a microscopic (local) analysis of the channel parameteres such as carrier concentration, drift and saturation velocities. For biases far away from the Dirac voltage, where the channel behaves as unipolar, we confirmed that the higher is the drift velocity, as close as possible to the saturation velocity, the greater fmax is. However, the largest fmax is recorded at biases near the crossover between unipolar and bipolar behavior, where it does not hold that the highest drift velocity maximizes fmax. In fact, the position and magnitude of the largest fmax depend on the complex interplay between the carrier concentration and total velocity which, in turn, are impacted by the self-heating. Importantly, this effect was found to severely limit radio-frequency performance, reducing the maximum fmax from around 60 to 40 GHz. △ Less

Submitted 18 October, 2019; originally announced October 2019.

Comments: 14 pages, 11 figures, supplementary material with 13 pages and 5 figures

Journal ref: Nanoscale Advances, 2020, 2, 4179-4186

Gate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity

Authors: Burkay Uzlu, Zhenxing Wang, Sebastian Lukas, Martin Otto, Max C. Lemme, Daniel Neumaier

Abstract: We demonstrate a novel concept for operating graphene-based Hall sensors using an alternating current (AC) modulated gate voltage, which provides three important advantages compared to Hall sensors under static operation: 1) The sensor sensitivity can be doubled by utilizing both n- and p-type conductance. 2) A static magnetic field can be read out at frequencies in the kHz range, where the 1/f no… ▽ More We demonstrate a novel concept for operating graphene-based Hall sensors using an alternating current (AC) modulated gate voltage, which provides three important advantages compared to Hall sensors under static operation: 1) The sensor sensitivity can be doubled by utilizing both n- and p-type conductance. 2) A static magnetic field can be read out at frequencies in the kHz range, where the 1/f noise is lower compared to the static case. 3) The off-set voltage in the Hall signal can be reduced. This significantly increases the signal-to-noise ratio compared to Hall sensors without a gate electrode. A minimal detectable magnetic field Bmin down to 290 nT/sqrt(Hz) and sensitivity up to 0.55 V/VT was found for Hall sensors fabricated on flexible foil. This clearly outperforms state-of-the-art flexible Hall sensors and is comparable to the values obtained by the best rigid III/V semiconductor Hall sensors. △ Less

Submitted 16 September, 2019; originally announced September 2019.

Journal ref: Scientific Reports, 9:18059, 2019

Analogue two-dimensional semiconductor electronics

Authors: Dmitry K. Polyushkin, Stefan Wachter, Lukas Mennel, Maksym Paliy, Giuseppe Iannaccone, Gianluca Fiori, Daniel Neumaier, Barbara Canto, Thomas Mueller

Abstract: While digital electronics has become entirely ubiquitous in today's world and appears in the limelight, analogue electronics is still playing a crucial role in many devices and applications. Current analogue circuits are mostly manufactured using silicon as active material, but the ever present demand for improved performance, new devices and flexible integration has - similar to their digital cou… ▽ More While digital electronics has become entirely ubiquitous in today's world and appears in the limelight, analogue electronics is still playing a crucial role in many devices and applications. Current analogue circuits are mostly manufactured using silicon as active material, but the ever present demand for improved performance, new devices and flexible integration has - similar to their digital counterparts - pushed for research into alternative materials. In recent years two-dimensional materials have received considerable research interest, fitting their promising properties for future electronics. In this work we demonstrate an operational amplifier - a basic building block of analogue electronics - using a two-dimensional semiconductor, namely molybdenum disulfide, as active material. Our device is capable of stable operation with good performance, and we demonstrate its use in feedback circuits such as inverting amplifiers, integrators, log amplifiers, and transimpedance amplifiers. △ Less

Submitted 31 August, 2019; originally announced September 2019.

Comments: 14 pages, 4 figures, 1 table

Graphene-Based Integrated Photonics For Next-Generation Datacom And Telecom

Authors: M. Romagnoli, V. Sorianello, M. Midrio, F. H. L. Koppens, C. Huyghebaert, D. Neumaier, P. Galli, W. Templ, A. D'Errico, A. C. Ferrari

Abstract: Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10$^{-3}$. It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipa… ▽ More Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10$^{-3}$. It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipation used for the thermal detuning of microresonators, and for thermoelectric-based ultrafast optical detectors that generate a voltage without transimpedance amplifiers. Here, we present our vision for grapheme-based integrated photonics. We review graphene-based transceivers and compare them with existing technologies. Strategies for improving power consumption, manufacturability and wafer-scale integration are addressed. We outline a roadmap of the technological requirements to meet the demands of the datacom and telecom markets. We show that graphene based integrated photonics could enable ultrahigh spatial bandwidth density , low power consumption for board connectivity and connectivity between data centres, access networks and metropolitan, core, regional and long-haul optical communications. △ Less

Submitted 2 June, 2019; originally announced June 2019.

Journal ref: Nature Reviews Materials 3, 392(2018)

Large-signal model of the Metal-Insulator-Graphene diode targeting RF applications

Authors: Francisco Pasadas, Mohamed Saeed, Ahmed Hamed, Zhenxing Wang, Renato Negra, Daniel Neumaier, David Jiménez

Abstract: We present a circuit-design compatible large-signal compact model of metal-insulator-graphene (MIG) diodes for describing its dynamic response for the first time. The model essentially consists of a voltage-dependent diode intrinsic capacitance coupled with a static voltage-dependent current source, the latter accounts for the vertical electron transport from/towards graphene, which has been model… ▽ More We present a circuit-design compatible large-signal compact model of metal-insulator-graphene (MIG) diodes for describing its dynamic response for the first time. The model essentially consists of a voltage-dependent diode intrinsic capacitance coupled with a static voltage-dependent current source, the latter accounts for the vertical electron transport from/towards graphene, which has been modeled by means of the Dirac-thermionic electron transport theory through the insulator barrier. Importantly, the image force effect has been found to play a key role in determining the barrier height, so it has been incorporated into the model accordingly. The resulting model has been implemented in Verilog A to be used in existing circuit simulators and benchmarked against an experimental 6-nm TiO2 barrier MIG diode working as a power detector. △ Less

Submitted 11 April, 2019; originally announced April 2019.

Comments: 4 pages, 5 figures, 1 table

Journal ref: IEEE Electron Devices Letters, vol. 40, no. 6, pp. 1005-9, June 2019

Graphene photodetector integrated on a photonic crystal defect waveguide

Authors: Simone Schuler, Daniel Schall, Daniel Neumaier, Benedikt Schwarz, Kenji Watanabe, Takashi Taniguchi, Thomas Mueller

Abstract: We present a graphene photodetector for telecom applications based on a silicon photonic crystal defect waveguide. The photonic structure is used to confine the propagating light in a narrow region in the graphene layer to enhance light-matter interaction. Additionally, it is utilized as split-gate electrode to create a pn-junction in the vicinity of the optical absorption region. The photonic cry… ▽ More We present a graphene photodetector for telecom applications based on a silicon photonic crystal defect waveguide. The photonic structure is used to confine the propagating light in a narrow region in the graphene layer to enhance light-matter interaction. Additionally, it is utilized as split-gate electrode to create a pn-junction in the vicinity of the optical absorption region. The photonic crystal defect waveguide allows for optimal photo-thermoelectric conversion of the occurring temperature profile in graphene into a photovoltage due to additional silicon slabs on both sides of the waveguide, enhancing the device response as compared to a conventional slot waveguide design. A photoresponsivity of 4.7 V/W and a (setup-limited) electrical bandwidth of 18 GHz are achieved. Under a moderate bias of 0.4 V we obtain a photoconductive responsivity of 0.17 A/W. △ Less

Submitted 7 March, 2019; originally announced March 2019.

Comments: 13 pages, 4 figures

Journal ref: ACS Photonics 5, 4758 (2018)

Carrier dynamics in graphene: ultrafast many-particle phenomena

Authors: Ermin Malic, Torben Winzer, Florian Wendler, Samuel Brem, Roland Jago, Andreas Knorr, Martin Mittendorff, Jacob C. König-Otto, Tobias Plötzing, Daniel Neumaier, Harald Schneider, Manfred Helm, Stephan Winnerl

Abstract: Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle p… ▽ More Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle phenomenon that is promising for the design of highly efficient photodetectors. Furthermore, the vanishing density of states at the Dirac point combined with ultrafast phonon-induced intraband scattering results in an accumulation of carriers and a population inversion suggesting the design of graphene-based terahertz lasers. Here, we review our work on the ultrafast carrier dynamics in graphene and Landau-quantized graphene is presented providing a microscopic view on the appearance of carrier multiplication and population inversion. △ Less

Submitted 15 October, 2018; originally announced October 2018.

Comments: 17 pages, 10 figures

All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

Authors: Himadri Pandey, Mehrdad Shaygan, Simon Sawallich, Satender Kataria, Zhenxing Wang, Achim Noculak, Martin Otto, Michael Nagel, Renato Negra, Daniel Neumaier, Max C. Lemme

Abstract: We report on the fabrication and characterization of field effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitride (BN) sheets with complementary metal oxide semiconductor (CMOS) compatible nickel edge contacts. Non-contact Tera-hertz time domain spectroscopy (THz-TDS) of large-area BN/graphene/BN (BN/G/BN) stacks reveals average… ▽ More We report on the fabrication and characterization of field effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitride (BN) sheets with complementary metal oxide semiconductor (CMOS) compatible nickel edge contacts. Non-contact Tera-hertz time domain spectroscopy (THz-TDS) of large-area BN/graphene/BN (BN/G/BN) stacks reveals average sheet conductivity >1 mS/sq and average mobility of 2500 cm$^{2}$/Vs. Improved output conductance is observed in direct current (DC) measurements under ambient conditions, indicating potential for radio-frequency (RF) applications. Moreover, we report a maximum voltage gain of 6 dB from a low frequency signal amplifier circuit. RF characterization of the GFETs yields an f$_{T}$ x L$_{g}$ product of 2.64 GHz$μ$m and an f$_{Max}$ x L$_{g}$ product of 5.88 GHz$μ$m. This study presents for the first time THz-TDS usage in combination with other characterization methods for device performance assessment on BN/G/BN stacks. The results serve as a step towards scalable, all CVD 2D material-based FETs for CMOS compatible future nanoelectronic circuit architectures. △ Less

Submitted 10 September, 2018; originally announced September 2018.

Comments: 6 pages

Journal ref: IEEE Transactions on Electron Devices, 65(10), 2018

Record high bandwidth integrated graphene photodetectors for communication beyond 180 Gb/s

Authors: Daniel Schall, Emiliano Pallecchi, Guillaume Ducournau, Vanessa Avramovic, Martin Otto, Daniel Neumaier

Abstract: We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The photodetectors are based on CVD graphene that is compatible to wafer scale production methods. We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The photodetectors are based on CVD graphene that is compatible to wafer scale production methods. △ Less

Submitted 26 April, 2018; originally announced April 2018.

Comments: 3 pages, 2 figures

High Performance Metal-Insulator-Graphene Diodes for Radio Frequency Power Detection Application

Authors: Mehrdad Shaygan, Zhenxing Wang, Mohamed Saeed Elsayed, Martin Otto, Giuseppe Iannaccone, Ahmed Hamed Ghareeb, Gianluca Fiori, Renato Negra, Daniel Neumaier

Abstract: Vertical metal-insulator-graphene (MIG) diodes for radio frequency (RF) power detection are realized using a scalable approach based on graphene grown by chemical vapor deposition and TiO2 as barrier material. The temperature dependent current flow through the diode can be described by thermionic emission theory taking into account a bias induced barrier lowering at the graphene TiO2 interface. Th… ▽ More Vertical metal-insulator-graphene (MIG) diodes for radio frequency (RF) power detection are realized using a scalable approach based on graphene grown by chemical vapor deposition and TiO2 as barrier material. The temperature dependent current flow through the diode can be described by thermionic emission theory taking into account a bias induced barrier lowering at the graphene TiO2 interface. The diodes show excellent figures of merit for static operation, including high on-current density of up to 28 A/cm^2, high asymmetry of up to 520, strong maximum nonlinearity of up to 15, and large maximum responsivity of up to 26 V^{-1}, outperforming state-of-the-art metal-insulator-metal and MIG diodes. RF power detection based on MIG diodes is demonstrated, showing a responsivity of 2.8 V/W at 2.4 GHz and 1.1 V/W at 49.4 GHz. △ Less

Submitted 26 April, 2018; originally announced April 2018.

Journal ref: Nanoscale, 9, 11944-11950, (2017)

Gate-defined electron-hole double dots in bilayer graphene

Authors: Luca Banszerus, Benedikt Frohn, Alexander Ep**, Daniel Neumaier, Kenji Watanabe, Takashi Taniguchi, Christoph Stampfer

Abstract: We present gate-controlled single, double, and triple dot operation in electrostatically gapped bilayer graphene. Thanks to the recent advancements in sample fabrication, which include the encapsulation of bilayer graphene in hexagonal boron nitride and the use of graphite gates, it has become possible to electrostatically confine carriers in bilayer graphene and to completely pinch-off current th… ▽ More We present gate-controlled single, double, and triple dot operation in electrostatically gapped bilayer graphene. Thanks to the recent advancements in sample fabrication, which include the encapsulation of bilayer graphene in hexagonal boron nitride and the use of graphite gates, it has become possible to electrostatically confine carriers in bilayer graphene and to completely pinch-off current through quantum dot devices. Here, we discuss the operation and characterization of electron-hole double dots. We show a remarkable degree of control of our device, which allows the implementation of two different gate-defined electron-hole double-dot systems with very similar energy scales. In the single dot regime, we extract excited state energies and investigate their evolution in a parallel magnetic field, which is in agreement with a Zeeman-spin-splitting expected for a g-factor of two. △ Less

Submitted 25 June, 2018; v1 submitted 28 March, 2018; originally announced March 2018.

Comments: 5 pages, 5 figures

Encapsulated graphene based Hall sensors on foil with increased sensitivity

Authors: Zhenxing Wang, Luca Banszerus, Martin Otto, Kenji Watanabe, Takashi Taniguchi, Christoph Stampfer, Daniel Neumaier

Abstract: The encapsulation of graphene based Hall sensors on foil is shown to be an effective method for improving the performance in terms of higher sensitivity for magnetic field detection. Two types of encapsulation were investigated: a simple encapsulation of graphene with polymethyl methacrylate (PMMA) as a proof of concept and an encapsulation with mechanically exfoliated hexagonal boron nitride (hBN… ▽ More The encapsulation of graphene based Hall sensors on foil is shown to be an effective method for improving the performance in terms of higher sensitivity for magnetic field detection. Two types of encapsulation were investigated: a simple encapsulation of graphene with polymethyl methacrylate (PMMA) as a proof of concept and an encapsulation with mechanically exfoliated hexagonal boron nitride (hBN). The Hall sensor with PMMA encapsulation already shows higher sensitivity compared to the one without encapsulation. However, the Hall sensor with graphene encapsulated between two stacks of hBN shows a current and a voltage normalized sensitivity of up to 2270 V/AT and 0.68 V/VT respectively, which are the highest reported sensitivity values for Hall sensors on foil so far. △ Less

Submitted 27 July, 2017; originally announced July 2017.

Journal ref: Phys Status Solidi B, 253, 2316-2320 (2016)

Flexible Hall Sensors Based on Graphene

Authors: Zhenxing Wang, Mehrdad Shaygan, Martin Otto, Daniel Schall, Daniel Neumaier

Abstract: The excellent electronic and mechanical properties of graphene provide a perfect basis for high performance flexible electronic and sensor devices. Here, we present the fabrication and characterization of flexible graphene based Hall sensors. The Hall sensors are fabricated on 50 um thick flexible Kapton foil using large scale graphene grown by chemical vapor deposition technique on copper foil. V… ▽ More The excellent electronic and mechanical properties of graphene provide a perfect basis for high performance flexible electronic and sensor devices. Here, we present the fabrication and characterization of flexible graphene based Hall sensors. The Hall sensors are fabricated on 50 um thick flexible Kapton foil using large scale graphene grown by chemical vapor deposition technique on copper foil. Voltage and current normalized sensitivities of up to 0.096 V/VT and 79 V/AT were measured, respectively. These values are comparable to the sensitivity of rigid silicon based Hall sensors and are the highest values reported so far for any flexible Hall sensor devices. The sensitivity of the Hall sensor shows no degradation after being bent to a minimum radius of 4 mm, which corresponds to a tensile strain of 0.6%, and after 1,000 bending cycles to a radius of 5 mm. △ Less

Submitted 27 July, 2017; originally announced July 2017.

Journal ref: Nanoscale, 8, 7683-7687 (2016)

Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal

Authors: Mehrdad Shaygan, Martin Otto, Abhay A. Sagade, Carlos A. Chavarin, Gerd Bacher, Wolfgang Mertin, Daniel Neumaier

Abstract: The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD-grown mon… ▽ More The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD-grown monolayer graphene by means of optical lithography using CMOS compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the contact resistance by Transfer Line Method (TLM) as well as the direct measurement using Kelvin Probe Force Microscopy demonstrates a very low width specific contact resistance. △ Less

Submitted 1 June, 2017; originally announced June 2017.

Graphene photodetectors with a bandwidth larger than 76 GHz fabricated in a 6 inch wafer process line

Authors: Daniel Schall, Caroline Porschatis, Martin Otto, Daniel Neumaier

Abstract: In recent years, the data traffic has grown exponentially and the forecasts indicate a huge market that could be addressed by communication infrastructure and service providers. However, the processing capacity, space, and energy consumption of the available technology is a serious bottleneck for the exploitation of these markets. Chip-integrated optical communication systems hold the promise of s… ▽ More In recent years, the data traffic has grown exponentially and the forecasts indicate a huge market that could be addressed by communication infrastructure and service providers. However, the processing capacity, space, and energy consumption of the available technology is a serious bottleneck for the exploitation of these markets. Chip-integrated optical communication systems hold the promise of significantly improving these issues related to the current technology. At the moment, the answer to the question which material is best suited for ultrafast chip integrated communication systems is still open. In this manuscript we report on ultrafast graphene photodetectors with a bandwidth of more than 76 GHz well suitable for communication links faster than 100 GBit/s per channel. We extract an upper value of 7.2 ps for the timescale in which the bolometric photoresponse in graphene is generated. The photodetectors were fabricated on 6 inch silicon-on-insulator wafers in a semiconductor pilot line, demonstrating the scalable fabrication of high-performance graphene based devices. △ Less

Submitted 16 March, 2017; originally announced March 2017.

Journal ref: Journal of Physics D: Applied Physics, Volume 50, Number 12, 2017

Identifying suitable substrates for high-quality graphene-based heterostructures

Authors: Luca Banszerus, Hendrik Janssen, Martin Otto, Alexander Ep**, Takashi Taniguchi, Kenji Watanabe, Bernd Beschoten, Daniel Neumaier, Christoph Stampfer

Abstract: We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and do** of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By ap… ▽ More We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and do** of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low do** densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced do** and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene. △ Less

Submitted 27 October, 2016; originally announced October 2016.

Comments: 6 pages, 5 figures

Journal ref: 2D Materials, Volume 4, 025030 (2017)

Controlled generation of a pn-junction in a waveguide integrated graphene photodetector

Authors: Simone Schuler, Daniel Schall, Daniel Neumaier, Lukas Dobusch, Ole Bethge, Benedikt Schwarz, Michael Krall, Thomas Mueller

Abstract: With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in graphene photodetectors have been studied extensively in the past years. However, the knowledge about efficient light conversion at graphene pn-junctions has not yet been translated into high-performance… ▽ More With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in graphene photodetectors have been studied extensively in the past years. However, the knowledge about efficient light conversion at graphene pn-junctions has not yet been translated into high-performance devices. Here, we present a graphene photodetector integrated on a silicon slot-waveguide, acting as a dual-gate to create a pn-junction in the optical absorption region of the device. While at zero bias the photo-thermoelectric effect is the dominant conversion process, an additional photoconductive contribution is identified in a biased configuration. Extrinsic responsivities of 35 mA/W, or 3.5 V/W, at zero bias and 76 mA/W at 300 mV bias voltage are achieved. The device exhibits a 3 dB-bandwidth of 65 GHz, which is the highest value reported for a graphene-based photodetector. △ Less

Submitted 18 October, 2016; originally announced October 2016.

Comments: 19 pages, 16 figures

Journal ref: Nano Letters 16, 7107 (2016)

Apparent rippling with honeycomb symmetry and tunable periodicity observed by scanning tunneling microscopy on suspended graphene

Authors: A. Georgi, P. Nemes-Incze, B. Szafranek, D. Neumaier, V. Geringer, M. Liebmann, M. Morgenstern

Abstract: Suspended graphene is difficult to image by scanning probe microscopy due to the inherent van-der-Waals and dielectric forces exerted by the tip which are not counteracted by a substrate. Here, we report scanning tunneling microscopy data of suspended monolayer graphene in constant-current mode revealing a surprising honeycomb structure with amplitude of 50$-$200 pm and lattice constant of 10-40 n… ▽ More Suspended graphene is difficult to image by scanning probe microscopy due to the inherent van-der-Waals and dielectric forces exerted by the tip which are not counteracted by a substrate. Here, we report scanning tunneling microscopy data of suspended monolayer graphene in constant-current mode revealing a surprising honeycomb structure with amplitude of 50$-$200 pm and lattice constant of 10-40 nm. The apparent lattice constant is reduced by increasing the tunneling current $I$, but does not depend systematically on tunneling voltage $V$ or scan speed $v_{\rm scan}$. The honeycomb lattice of the rippling is aligned with the atomic structure observed on supported areas, while no atomic corrugation is found on suspended areas down to the resolution of about $3-4$ pm. We rule out that the honeycomb structure is induced by the feedback loop using a changing $v_{\rm scan}$, that it is a simple enlargement effect of the atomic resolution as well as models predicting frozen phonons or standing phonon waves induced by the tunneling current. Albeit we currently do not have a convincing explanation for the observed effect, we expect that our intriguing results will inspire further research related to suspended graphene. △ Less

Submitted 18 November, 2016; v1 submitted 24 August, 2016; originally announced August 2016.

Comments: 10 pages, 7 figures, modified, more detailed discussion on errors in vdW parameters

Journal ref: Phys. Rev. B 94, 184302 (2016)

A physics based model of gate tunable metal-graphene contact resistance benchmarked against experimental data

Authors: Ferney A. Chaves, David Jiménez, Abhay A. Sagade, Wonjae Kim, Juha Riikonen, Harri Lipsanen, Daniel Neumaier

Abstract: The metal-graphene contact resistance is a technological bottleneck for the realization of viable graphene based electronics. We report a useful model to find the gate tunable components of this resistance determined by the sequential tunneling of carriers between the 3D-metal and 2D-graphene underneath followed by Klein tunneling to the graphene in the channel. This model quantifies the intrinsic… ▽ More The metal-graphene contact resistance is a technological bottleneck for the realization of viable graphene based electronics. We report a useful model to find the gate tunable components of this resistance determined by the sequential tunneling of carriers between the 3D-metal and 2D-graphene underneath followed by Klein tunneling to the graphene in the channel. This model quantifies the intrinsic factors that control that resistance, including the effect of unintended chemical do**. Our results agree with experimental results for several metals. △ Less

Submitted 30 July, 2015; originally announced July 2015.

Comments: 24 pages, 12 Figures

Journal ref: 2D Materials, 2, 025006 (2015)

Nanosecond spin lifetimes in bottom-up fabricated bilayer graphene spin-valves with atomic layer deposited Al$_2$O$_3$ spin injection and detection barriers

Authors: Marc Drögeler, Frank Volmer, Maik Wolter, Kenji Watanabe, Takashi Taniguchi, Daniel Neumaier, Christoph Stampfer, Bernd Beschoten

Abstract: We present spin transport studies on bi- and trilayer graphene non-local spin-valves which have been fabricated by a bottom-up fabrication method. By this technique, spin injection electrodes are first deposited onto Si$^{++}$/SiO$_2$ substrates with subsequent mechanical transfer of a graphene/hBN heterostructure. We showed previously that this technique allows for nanosecond spin lifetimes at ro… ▽ More We present spin transport studies on bi- and trilayer graphene non-local spin-valves which have been fabricated by a bottom-up fabrication method. By this technique, spin injection electrodes are first deposited onto Si$^{++}$/SiO$_2$ substrates with subsequent mechanical transfer of a graphene/hBN heterostructure. We showed previously that this technique allows for nanosecond spin lifetimes at room temperature combined with carrier mobilities which exceed 20,000 cm$^2$/(Vs). Despite strongly enhanced spin and charge transport properties, the MgO injection barriers in these devices exhibit conducting pinholes which still limit the measured spin lifetimes. We demonstrate that these pinholes can be partially diminished by an oxygen treatment of a trilayer graphene device which is seen by a strong increase of the contact resistance area products of the Co/MgO electrodes. At the same time, the spin lifetime increases from 1 ns to 2 ns. We believe that the pinholes partially result from the directional growth in molecular beam epitaxy. For a second set of devices, we therefore used atomic layer deposition of Al$_2$O$_3$ which offers the possibility to isotropically deposit more homogeneous barriers. While the contacts of the as-fabricated bilayer graphene devices are non-conductive, we can partially break the oxide barriers by voltage pulses. Thereafter, the devices also exhibit nanosecond spin lifetimes. △ Less

Submitted 9 July, 2015; originally announced July 2015.

Comments: 6 pages, 4 figures

Journal ref: Physica Status Solidi (b) 252, 2395 (2015)

Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

Authors: Jan Dauber, Abhay A. Sagade, Martin Oellers, Kenji Watanabe, Takashi Taniguchi, Daniel Neumaier, Christoph Stampfer

Abstract: The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge charier density at room temperature. We show a detailed device characterization including Hall effect m… ▽ More The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge charier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of- the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/pHz making our graphene sensors highly interesting for industrial applications. △ Less

Submitted 7 April, 2015; originally announced April 2015.

Comments: 10 pages, 3 figures, 1 table

Journal ref: Appl. Phys. Lett. 106, 193501 (2015)

Experimental verification of electro-refractive phase modulation in graphene

Authors: Muhammad Mohsin, Daniel Neumaier, Daniel Schall, Martin Otto, Christopher Matheisen, Anna Lena Giesecke, Abhay A. Sagade, Heinrich Kurz

Abstract: Graphene has been considered as a promising material for opto-electronic devices, because of its tunable and wideband optical properties. In this work, we demonstrate electro-refractive phase modulation in graphene at wavelengths from 1530 to 1570 nm. By integrating a gated graphene layer in a silicon-waveguide based Mach-Zehnder interferometer, the key parameters of a phase modulator like change… ▽ More Graphene has been considered as a promising material for opto-electronic devices, because of its tunable and wideband optical properties. In this work, we demonstrate electro-refractive phase modulation in graphene at wavelengths from 1530 to 1570 nm. By integrating a gated graphene layer in a silicon-waveguide based Mach-Zehnder interferometer, the key parameters of a phase modulator like change in effective refractive index, insertion loss and absorption change are extracted. These experimentally obtained values are well reproduced by simulations and design guidelines are provided to make graphene devices competitive to contemporary silicon based phase modulators for on-chip applications. △ Less

Submitted 17 March, 2015; originally announced March 2015.

Comments: Correspondence address:- [email protected]

High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants

Authors: Bartholomaeus N. Szafranek, Daniel Schall, Martin Otto, Daniel Neumaier, Heinrich Kurz

Abstract: The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the operation of bilayer graphene based field effect transistors requires two individual gates to vary the channel's conductance and to create a band gap. In this pap… ▽ More The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the operation of bilayer graphene based field effect transistors requires two individual gates to vary the channel's conductance and to create a band gap. In this paper we report on a method to increase the on/off ratio in single gated bilayer graphene field effect transistors by adsorbate do**. The adsorbate dopants on the upper side of the graphene establish a displacement field perpendicular to the graphene surface breaking the inversion symmetry of the two graphene layers. Low temperature measurements indicate, that the increased on/off ratio is caused by the opening of a mobility gap. Beside field effect transistors the presented approach can also be employed for other bilayer graphene based devices like photodetectors for THz to infrared radiation, chemical sensors and in more sophisticated structures such as antidot- or superlattices where an artificial potential landscape has to be created. △ Less

Submitted 24 February, 2011; originally announced February 2011.

Comments: 4 pages, 4 figures

Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature

Authors: Bartholomaeus N. Szafranek, Daniel Schall, Martin Otto, Daniel Neumaier, Heinrich Kurz

Abstract: We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, re… ▽ More We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ~sim50 meV. This demonstrates the potential of bilayer graphene as FET channel material in a conventional CMOS environment. △ Less

Submitted 28 January, 2010; originally announced January 2010.

Comments: 3 pages, 3 figures

Electrical transport and low-temperature scanning tunneling microscopy of microsoldered graphene

Authors: V. Geringer, D. Subramaniam, A. K. Michel, B. Szafranek, D. Schall, A. Georgi, T. Mashoff, D. Neumaier, M. Liebmann, M. Morgenstern

Abstract: Using the recently developed technique of microsoldering, we perform a systematic transport study of the influence of PMMA on graphene flakes revealing a do** effect of up to 3.8x10^12 1/cm^2, but a negligible influence on mobility and gate voltage induced hysteresis. Moreover, we show that the microsoldered graphene is free of contamination and exhibits a very similar intrinsic rippling as ha… ▽ More Using the recently developed technique of microsoldering, we perform a systematic transport study of the influence of PMMA on graphene flakes revealing a do** effect of up to 3.8x10^12 1/cm^2, but a negligible influence on mobility and gate voltage induced hysteresis. Moreover, we show that the microsoldered graphene is free of contamination and exhibits a very similar intrinsic rippling as has been found for lithographically contacted flakes. Finally, we demonstrate a current induced closing of the previously found phonon gap appearing in scanning tunneling spectroscopy experiments, strongly non-linear features at higher bias probably caused by vibrations of the flake and a B-field induced double peak attributed to the 0.Landau level of graphene. △ Less

Submitted 11 December, 2009; originally announced December 2009.

Comments: 8 pages, 3 figures

Journal ref: Appl. Phys. Lett. 96, 082114 (2010)

Transport through (Ga,Mn)As nanoislands: Coulomb-blockade and temperature dependence of the conductance

Authors: Markus Schlapps, Teresa Lermer, Stefan Geissler, Daniel Neumaier, Janusz Sadowski, Dieter Schuh, Werner Wegscheider, Dieter Weiss

Abstract: We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature dependent measurements down to the millikelvin range we compare the models currently used to describe transport through (Ga,Mn)As nanoconstrictions. We provide an explanatio… ▽ More We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature dependent measurements down to the millikelvin range we compare the models currently used to describe transport through (Ga,Mn)As nanoconstrictions. We provide an explanation for the observed spin-valve like behavior during a magnetic field sweep by means of the magnetization configurations in the device. Furthermore, we prove that Coulomb-blockade plays a decisive role for the transport mechanism and show that modeling the constriction as a granular metal describes the temperature and bias dependence of the conductance correctly and allows to estimate the number of participating islands located in the constriction. △ Less

Submitted 14 September, 2009; v1 submitted 21 April, 2009; originally announced April 2009.

Comments: 5 pages, 3 figures, completed affiliations and corrected typos

All electrical measurement of the density of states in (Ga,Mn)As

Authors: D. Neumaier, M. Turek, U. Wurstbauer, A. Vogl, M. Utz, W. Wegscheider, D. Weiss

Abstract: We report on electrical measurements of the effective density of states in the ferromagnetic semiconductor material (Ga,Mn)As. By analyzing the conductivity correction due to enhanced electron-electron interaction the electrical diffusion constant was extracted for (Ga,Mn)As samples of different dimensionality. Using the Einstein relation allows to deduce the effective density of states of (Ga,M… ▽ More We report on electrical measurements of the effective density of states in the ferromagnetic semiconductor material (Ga,Mn)As. By analyzing the conductivity correction due to enhanced electron-electron interaction the electrical diffusion constant was extracted for (Ga,Mn)As samples of different dimensionality. Using the Einstein relation allows to deduce the effective density of states of (Ga,Mn)As at the Fermi energy. △ Less

Submitted 16 February, 2009; originally announced February 2009.

Quantum transport in ferromagnetic Permalloy nanostructures

Authors: D. Neumaier, A. Vogl, J. Eroms, D. Weiss

Abstract: We studied phase coherent phenomena in mesoscopic Permalloy samples by exploring low temperature transport. Both, differential conductance as a function of bias voltage and magnetoconductance of individual wires display conductance fluctuations. Analysis of these fluctuations yields a phase coherence length of $\sim250$ nm at 25 mK as well as a $1/\sqrt{T}$ temperature dependence. To suppress co… ▽ More We studied phase coherent phenomena in mesoscopic Permalloy samples by exploring low temperature transport. Both, differential conductance as a function of bias voltage and magnetoconductance of individual wires display conductance fluctuations. Analysis of these fluctuations yields a phase coherence length of $\sim250$ nm at 25 mK as well as a $1/\sqrt{T}$ temperature dependence. To suppress conductance fluctuations by ensemble averaging we investigated low temperature transport in wire arrays and extended Permalloy films. In these samples we have measured conductance corrections which stem from electron-electron interaction (EEI) but attempts to detect signatures of weak localization were without success. △ Less

Submitted 1 September, 2008; originally announced September 2008.