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Long-Range Nanoelectromechanical Coupling at the LaAlO$_3$/SrTiO$_3$ Interface
Authors:
Aditi Nethwewala,
Kitae Eom,
Muqing Yu,
Ranjani Ramachandran,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy
Abstract:
The LaAlO$_3$/SrTiO$_3$ interface hosts a plethora of gate-tunable electronic phases. Gating of LaAlO$_3$/SrTiO$_3$ interfaces are usually assumed to occur electrostatically. However, increasing evidence suggests that non-local interactions can influence and, in some cases, dominate the coupling between applied gate voltages and electronic properties. Here, we sketch quasi-1D ballistic electron wa…
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The LaAlO$_3$/SrTiO$_3$ interface hosts a plethora of gate-tunable electronic phases. Gating of LaAlO$_3$/SrTiO$_3$ interfaces are usually assumed to occur electrostatically. However, increasing evidence suggests that non-local interactions can influence and, in some cases, dominate the coupling between applied gate voltages and electronic properties. Here, we sketch quasi-1D ballistic electron waveguides at the LaAlO$_3$/SrTiO$_3$ interface as a probe to understand how gate tunability varies as a function of spatial separation. Gate tunability measurements reveal the scaling law to be at odds with the pure electrostatic coupling observed in traditional semiconductor systems. The non-Coulombic gating at the interface is attributed to the existence of a long-range nanoelectromechanical coupling between the gate and electron waveguide, mediated by the ferroelastic domains in SrTiO$_3$. The long-range interactions at the LaAlO$_3$/SrTiO$_3$ interface add unexpected richness and complexity to this correlated electron system.
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Submitted 31 March, 2024;
originally announced April 2024.
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Probing single electrons across 300 mm spin qubit wafers
Authors:
Samuel Neyens,
Otto K. Zietz,
Thomas F. Watson,
Florian Luthi,
Aditi Nethwewala,
Hubert C. George,
Eric Henry,
Mohammad Islam,
Andrew J. Wagner,
Felix Borjans,
Elliot J. Connors,
J. Corrigan,
Matthew J. Curry,
Daniel Keith,
Roza Kotlyar,
Lester F. Lampert,
Mateusz T. Madzik,
Kent Millard,
Fahd A. Mohiyaddin,
Stefano Pellerano,
Ravi Pillarisetty,
Mick Ramsey,
Rostyslav Savytskyy,
Simon Schaal,
Guoji Zheng
, et al. (5 additional authors not shown)
Abstract:
Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient dev…
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Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient device screening and to improve statistical metrics like qubit yield and voltage variation. Spin qubits based on electrons in Si have shown impressive control fidelities but have historically been challenged by yield and process variation. Here we present a testing process using a cryogenic 300 mm wafer prober to collect high-volume data on the performance of hundreds of industry-manufactured spin qubit devices at 1.6 K. This testing method provides fast feedback to enable optimization of the CMOS-compatible fabrication process, leading to high yield and low process variation. Using this system, we automate measurements of the operating point of spin qubits and probe the transitions of single electrons across full wafers. We analyze the random variation in single-electron operating voltages and find that the optimized fabrication process leads to low levels of disorder at the 300 mm scale. Together these results demonstrate the advances that can be achieved through the application of CMOS industry techniques to the fabrication and measurement of spin qubit devices.
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Submitted 3 May, 2024; v1 submitted 10 July, 2023;
originally announced July 2023.
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Electron Pairing and Nematicity in LaAlO$_3$/SrTiO$_3$ Nanostructures
Authors:
Aditi Nethwewala,
Hyungwoo Lee,
Jianan Li,
Megan Briggeman,
Yun-Yi Pai,
Kitae Eom,
Chang-Beom Eom,
Patrick Irvin,
Jeremy Levy
Abstract:
Strongly correlated electronic systems exhibit a wealth of unconventional behavior stemming from strong electron-electron interactions. The LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructure supports rich and varied low-temperature transport characteristics including low-density superconductivity, and electron pairing without superconductivity for which the microscopic origins is still not understood.…
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Strongly correlated electronic systems exhibit a wealth of unconventional behavior stemming from strong electron-electron interactions. The LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructure supports rich and varied low-temperature transport characteristics including low-density superconductivity, and electron pairing without superconductivity for which the microscopic origins is still not understood. LAO/STO also exhibits inexplicable signatures of electronic nematicity via nonlinear and anomalous Hall effects. Nanoscale control over the conductivity of the LAO/STO interface enables mesoscopic experiments that can probe these effects and address their microscopic origins. Here we report a direct correlation between electron pairing without superconductivity, anomalous Hall effect and electronic nematicity in quasi-1D ballistic nanoscale LAO/STO Hall crosses. The characteristic magnetic field at which the Hall coefficient changes directly coincides with the depairing of non-superconducting pairs showing a strong correlation between the two distinct phenomena. Angle-dependent Hall measurements further reveal an onset of electronic nematicity that again coincides with the electron pairing transition, unveiling a rotational symmetry breaking due to the transition from paired to unpaired phases at the interface. The results presented here highlights the influence of preformed electron pairs on the transport properties of LAO/STO and provide evidence of the elusive pairing ''glue'' that gives rise to electron pairing in SrTiO$_3$-based systems.
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Submitted 22 December, 2022;
originally announced December 2022.
