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Towards efficient Effective One Body models for generic, non-planar orbits
Authors:
Rossella Gamba,
Danilo Chiaramello,
Sayan Neogi
Abstract:
Complete waveform models able to account for arbitrary non-planar orbits represent a holy grail in current gravitational-wave astronomy. Here, we take a step towards this direction and present a simple yet efficient prescription to obtain the evolution of the spin vectors and of the orbital angular momentum along non-circularized orbits, that can be applied to any eccentric aligned-spins waveform…
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Complete waveform models able to account for arbitrary non-planar orbits represent a holy grail in current gravitational-wave astronomy. Here, we take a step towards this direction and present a simple yet efficient prescription to obtain the evolution of the spin vectors and of the orbital angular momentum along non-circularized orbits, that can be applied to any eccentric aligned-spins waveform model. The scheme employed is motivated by insights gained from the post-Newtonian (PN) regime. We investigate the phenomenology of the Euler angles characterizing the time-dependent rotation that connects the co-precessing frame to the inertial one, gauging the importance of non-circular terms in the evolution of the spins of a precessing binary. We demonstrate that such terms are largely negligible, irrespectively of the details of the orbit. Such insights are confirmed by studying the radiation-frame of a few eccentric, precessing numerical relativity (NR) simulations. Our investigations confirm that the usual "twisting" technique employed for quasi-spherical systems can be safely applied to non-circularized binaries. By then augmenting a state-of-the-art Effective-One-Body (EOB) model for non-circular planar orbits with the prescription discussed, we obtain an inspiral-merger-ringdown (IMR) model for eccentric, precessing binary black holes (BBHs). We validate the model in the quasi-spherical limit via mismatches and present one phasing comparison against a precessing, eccentric simulation from the RIT catalog.
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Submitted 26 June, 2024; v1 submitted 23 April, 2024;
originally announced April 2024.
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FluxGAN: A Physics-Aware Generative Adversarial Network Model for Generating Microstructures That Maintain Target Heat Flux
Authors:
Artem K. Pimachev,
Manoj Settipalli,
Sanghamitra Neogi
Abstract:
We propose a physics-aware generative adversarial network model, FluxGAN, capable of simultaneously generating high-quality images of large microstructures and description of their thermal properties. During the training phase, the model learns about the relationship between the local structural features and the physical processes, such as the heat flux in the microstructures, due to external temp…
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We propose a physics-aware generative adversarial network model, FluxGAN, capable of simultaneously generating high-quality images of large microstructures and description of their thermal properties. During the training phase, the model learns about the relationship between the local structural features and the physical processes, such as the heat flux in the microstructures, due to external temperature gradients. Once trained, the model generates new structural and associated heat flux environments, bypassing the computationally expensive modeling. Our model provides a cost effective and efficient approach over conventional modeling techniques, such as the finite element method (FEM), for describing the thermal properties of microstructures. The conventional approach requires computational modeling that scales with the size of the microstructure model, therefore limiting the simulation to a given size, resolution, and complexity of the model. In contrast, the FluxGAN model uses synthesis-by-part approach and generates arbitrary large size images at low computational cost. We demonstrate that the model can be utilized to generate designs of thermal sprayed coatings that satisfies target thermal properties. Furthermore, the model is capable of generating coating microstructures and physical processes in three-dimensional (3D) domain after being trained on two-dimensional (2D) examples. Our approach has the potential to transform the design and optimization of thermal sprayed coatings for various applications, including high-temperature and long-duration operation of gas turbines for aircraft or ground-based power generators.
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Submitted 6 October, 2023;
originally announced October 2023.
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Investigation of Phonon Lifetimes and Magnon-Phonon Coupling in YIG/GGG Hybrid Magnonic Systems in the Diffraction Limited Regime
Authors:
Manoj Settipalli,
Xufeng Zhang,
Sanghamitra Neogi
Abstract:
Quantum memories facilitate the storage and retrieval of quantum information for on-chip and long-distance quantum communications. Thus, they play a critical role in quantum information processing and have diverse applications ranging from aerospace to medical imaging fields. Bulk acoustic wave (BAW) phonons are one of the most attractive candidates for quantum memories because of their long lifet…
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Quantum memories facilitate the storage and retrieval of quantum information for on-chip and long-distance quantum communications. Thus, they play a critical role in quantum information processing and have diverse applications ranging from aerospace to medical imaging fields. Bulk acoustic wave (BAW) phonons are one of the most attractive candidates for quantum memories because of their long lifetime and high operating frequency. In this work, we establish a modeling approach that can be broadly used to design hybrid magnonic high-overtone bulk acoustic wave resonator (HBAR) structures for high-density, long-lasting quantum memories and efficient quantum transduction devices. We illustrate the approach by investigating a hybrid magnonic system, where BAW phonons are excited in a gadolinium iron garnet (GGG) thick film via coupling with magnons in a patterned yttrium iron garnet (YIG) thin film. We present theoretical and numerical analyses of the diffraction-limited BAW phonon lifetimes, modeshapes, and their coupling strengths to magnons in planar and confocal YIG/GGG HBAR structures. We utilize Fourier beam propagation and Hankel transform eigenvalue problem methods and discuss the effectiveness of the two methods to predict the HBAR phonons. We discuss strategies to improve the phonon lifetimes, since increased lifetimes have direct implications on the storage times of quantum states for quantum memory applications. We find that ultra-high, diffraction-limited, cooperativities and phonon lifetimes on the order of ~10^5 and ~10 milliseconds, respectively, could be achieved using a CHBAR structure with 10mum lateral YIG dimension. Additionally, the confocal HBAR structure will offer more than 100-fold improvement of integration density. A high integration density of on-chip memory or transduction centers is naturally desired for high-density memory or transduction devices.
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Submitted 29 November, 2023; v1 submitted 13 August, 2023;
originally announced August 2023.
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Deep Learning Model for Inverse Design of Semiconductor Heterostructures with Desired Electronic Band Structures
Authors:
Artem K Pimachev,
Sanghamitra Neogi
Abstract:
First-principles modeling techniques have shown remarkable success in predicting electronic band structures of materials. However, the computational costs make it challenging to use them for predicting band structures of semiconductor heterostructures, that show high variability of atomic structures. We propose a machine learning-assisted first-principles framework that bypasses expensive computat…
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First-principles modeling techniques have shown remarkable success in predicting electronic band structures of materials. However, the computational costs make it challenging to use them for predicting band structures of semiconductor heterostructures, that show high variability of atomic structures. We propose a machine learning-assisted first-principles framework that bypasses expensive computations and predicts band structures from the knowledge of atomic structural features. Additionally, the framework directly connects modeling results and experimental data. For example, it accepts images obtained with angle-resolved photoemission spectroscopy as input and predicts the corresponding atomic structures. The framework leverages the physical relationship between atomic environments and bands. We demonstrate the framework using silicon/germanium based superlattices and heterostructures. Once trained on silicon-based systems, the framework can even predict band structures of gallium arsenide thin films. The physics-informed framework establishes an approach to expedite the design and discovery of complex materials with desired band structures, going beyond combinatorial approaches.
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Submitted 6 February, 2023; v1 submitted 1 February, 2023;
originally announced February 2023.
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Effect of Electron-Phonon and Electron-Impurity Scattering on Electronic Transport Properties of Silicon/Germanium Superlattices
Authors:
Manoj Settipalli,
Vitaly S Proshchenko,
Sanghamitra Neogi
Abstract:
Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and improvement of efficiency. Most studies assumed that their electronic properties remain unaffected compared to their bulk counterparts. However, recent studies demo…
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Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and improvement of efficiency. Most studies assumed that their electronic properties remain unaffected compared to their bulk counterparts. However, recent studies demonstrated that electronic properties of silicon (Si)/germanium (Ge) superlattices show significant variations depending on compositions and growth substrates. These studies used a constant relaxation time approximation, and ignored the effects of electron scattering processes. Here, we consider electron scattering with phonons and ionized impurities, and report first-principles calculations of electronic transport properties including the scattering rates. We investigate two classes of Si/Ge superlattices: superlattices with varied compositions grown on identical substrates and with identical compositions but grown on different substrates. We illustrate the relationship between the energy bands of the superlattices and the electron-phonon relaxation times. We model the electron-ionized impurity interaction potentials by accounting for the in-plane and the cross-plane structural anisotropy. Our analysis reveals that the inclusion of electron-phonon and electron-impurity scattering processes can lead to ~1.56-fold improved peak power-factors, compared to that of bulk Si. We observe that superlattices can also display dramatically reduced power-factors for specific lattice strain environments. Such reduction could cancel out thermoelectric efficiency improvements due to reduced thermal conductivities. Our study provides insight to predict variation of electronic properties due to changes in lattice strain environments, essential for designing superlattices with optimized electronic properties.
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Submitted 24 November, 2021;
originally announced November 2021.
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First-Principles Prediction of Electronic Transport in Experimental Semiconductor Heterostructures via Physics-Based Machine Learning
Authors:
Artem K. Pimachev,
Sanghamitra Neogi
Abstract:
First-principles techniques for electronic transport property prediction have seen rapid progress in recent years. However, it remains a challenge to model heterostructures incorporating variability due to fabrication processes. Machine-learning (ML)-based materials informatics approaches (MI) are increasingly used to accelerate design and discovery of new materials with targeted properties, and e…
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First-principles techniques for electronic transport property prediction have seen rapid progress in recent years. However, it remains a challenge to model heterostructures incorporating variability due to fabrication processes. Machine-learning (ML)-based materials informatics approaches (MI) are increasingly used to accelerate design and discovery of new materials with targeted properties, and extend the applicability of first-principles techniques to larger systems. However, few studies exploited MI to learn electronic structure properties and use the knowledge to predict the respective transport coefficients. In this work, we propose an electronic-transport-informatics (ETI) framework that trains on ab initio models of small systems and predicts thermopower of silicon/germanium heterostructures beyond the length-scale accessible with first-principles techniques, matching measured data. We demonstrate application of MI to extract important physics that determines electronic transport in semiconductor heterostructures, breaking from combinatorial strategies pursued especially for thermoelectric materials. We anticipate that ETI would have broad applicability to diverse materials classes.
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Submitted 17 November, 2020;
originally announced November 2020.
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Theoretical Prediction of Enhanced Thermopower in n-doped Si/Ge Superlattices using Effective Mass Approximation
Authors:
Manoj Settipalli,
Sanghamitra Neogi
Abstract:
We analyze the cross-plane miniband transport in n-doped [001] silicon (Si)/germanium (Ge) superlattices using an effective mass approximation (EMA) approach that correctly accounts for the indirect nature of the Si and Ge band gaps. Direct-gap based EMA has been employed so far to investigate the electronic properties of these superlattices, that does not accurately predict transport properties.…
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We analyze the cross-plane miniband transport in n-doped [001] silicon (Si)/germanium (Ge) superlattices using an effective mass approximation (EMA) approach that correctly accounts for the indirect nature of the Si and Ge band gaps. Direct-gap based EMA has been employed so far to investigate the electronic properties of these superlattices, that does not accurately predict transport properties. We use the Boltzmann transport equation framework in combination with the EMA band analysis, and predict that significant improvement of the thermopower of n-doped Si/Ge superlattices can be achieved by controlling the lattice strain environment in these heterostructured materials. We illustrate that a remarkable degree of tunability in the Seebeck coefficient can be attained by growing the superlattices on various substrates, and varying the periods, and the compositions. Our calculations show up to ~3.2-fold Seebeck enhancement in Si/Ge [001] superlattices over bulk silicon, in the high-do** regime, breaking the Pisarenko relation. The thermopower modulations lead to an increase of power factor by up to 20%. Our approach is generically applicable to other superlattice systems, e.g., to investigate dimensional effects on electronic transport in two-dimensional nanowire and three dimensional nanodot superlattices. A material with high S potentially improves the energy conversion efficiency of thermoelectric applications and additionally, is highly valuable in various Seebeck metrology techniques including thermal, flow, radiation, and chemical sensing applications. We anticipate that the ideas presented here will have a strong impact in controlling electronic transport in various thermoelectric, opto-electronic, and quantum-enhanced materials applications.
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Submitted 18 November, 2019;
originally announced November 2019.
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Factored Latent-Dynamic Conditional Random Fields for Single and Multi-label Sequence Modeling
Authors:
Satyajit Neogi,
Justin Dauwels
Abstract:
Conditional Random Fields (CRF) are frequently applied for labeling and segmenting sequence data. Morency et al. (2007) introduced hidden state variables in a labeled CRF structure in order to model the latent dynamics within class labels, thus improving the labeling performance. Such a model is known as Latent-Dynamic CRF (LDCRF). We present Factored LDCRF (FLDCRF), a structure that allows multip…
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Conditional Random Fields (CRF) are frequently applied for labeling and segmenting sequence data. Morency et al. (2007) introduced hidden state variables in a labeled CRF structure in order to model the latent dynamics within class labels, thus improving the labeling performance. Such a model is known as Latent-Dynamic CRF (LDCRF). We present Factored LDCRF (FLDCRF), a structure that allows multiple latent dynamics of the class labels to interact with each other. Including such latent-dynamic interactions leads to improved labeling performance on single-label and multi-label sequence modeling tasks. We apply our FLDCRF models on two single-label (one nested cross-validation) and one multi-label sequence tagging (nested cross-validation) experiments across two different datasets - UCI gesture phase data and UCI opportunity data. FLDCRF outperforms all state-of-the-art sequence models, i.e., CRF, LDCRF, LSTM, LSTM-CRF, Factorial CRF, Coupled CRF and a multi-label LSTM model in all our experiments. In addition, LSTM based models display inconsistent performance across validation and test data, and pose diffculty to select models on validation data during our experiments. FLDCRF offers easier model selection, consistency across validation and test performance and lucid model intuition. FLDCRF is also much faster to train compared to LSTM, even without a GPU. FLDCRF outshines the best LSTM model by ~4% on a single-label task on UCI gesture phase data and outperforms LSTM performance by ~2% on average across nested cross-validation test sets on the multi-label sequence tagging experiment on UCI opportunity data. The idea of FLDCRF can be extended to joint (multi-agent interactions) and heterogeneous (discrete and continuous) state space models.
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Submitted 12 November, 2019; v1 submitted 9 November, 2019;
originally announced November 2019.
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Anisotropic In-Plane Phonon Transport in Ultrathin Silicon Membranes Guided by Nano-Surface-Resonators
Authors:
Sanghamitra Neogi,
Davide Donadio
Abstract:
Anisotropic phonon transport along different lattice directions of two-dimensional (2D) materials has been observed, however, the effect decreases with increasing the thickness beyond a few atomic layers. Here we establish a novel mechanism to induce anisotropic phonon transport in quasi-2D materials with isotropic symmetry. The phonon propagation is guided by resonance hybridization with surface…
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Anisotropic phonon transport along different lattice directions of two-dimensional (2D) materials has been observed, however, the effect decreases with increasing the thickness beyond a few atomic layers. Here we establish a novel mechanism to induce anisotropic phonon transport in quasi-2D materials with isotropic symmetry. The phonon propagation is guided by resonance hybridization with surface nanostructures. We demonstrate that the thermal conductivity of 3 nm-thick silicon membrane with surface nanofins is greater by $\sim50\%$ parallel to the fins than that perpendicular to the fins.
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Submitted 11 October, 2019;
originally announced October 2019.
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Context Model for Pedestrian Intention Prediction using Factored Latent-Dynamic Conditional Random Fields
Authors:
Satyajit Neogi,
Michael Hoy,
Kang Dang,
Hang Yu,
Justin Dauwels
Abstract:
Smooth handling of pedestrian interactions is a key requirement for Autonomous Vehicles (AV) and Advanced Driver Assistance Systems (ADAS). Such systems call for early and accurate prediction of a pedestrian's crossing/not-crossing behaviour in front of the vehicle. Existing approaches to pedestrian behaviour prediction make use of pedestrian motion, his/her location in a scene and static context…
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Smooth handling of pedestrian interactions is a key requirement for Autonomous Vehicles (AV) and Advanced Driver Assistance Systems (ADAS). Such systems call for early and accurate prediction of a pedestrian's crossing/not-crossing behaviour in front of the vehicle. Existing approaches to pedestrian behaviour prediction make use of pedestrian motion, his/her location in a scene and static context variables such as traffic lights, zebra crossings etc. We stress on the necessity of early prediction for smooth operation of such systems. We introduce the influence of vehicle interactions on pedestrian intention for this purpose. In this paper, we show a discernible advance in prediction time aided by the inclusion of such vehicle interaction context. We apply our methods to two different datasets, one in-house collected - NTU dataset and another public real-life benchmark - JAAD dataset. We also propose a generic graphical model Factored Latent-Dynamic Conditional Random Fields (FLDCRF) for single and multi-label sequence prediction as well as joint interaction modeling tasks. FLDCRF outperforms Long Short-Term Memory (LSTM) networks across the datasets ($\sim$100 sequences per dataset) over identical time-series features. While the existing best system predicts pedestrian stop** behaviour with 70\% accuracy 0.38 seconds before the actual events, our system achieves such accuracy at least 0.9 seconds on an average before the actual events across datasets.
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Submitted 15 September, 2020; v1 submitted 27 July, 2019;
originally announced July 2019.
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Modulation of Semiconductor Superlattice Thermopower Through Symmetry and Strain
Authors:
Vitaly. S. Proshchenko,
Manoj Settipalli,
Artem K. Pimachev,
Sanghamitra Neogi
Abstract:
In doped semiconductors and metals, the thermopower decreases with increasing carrier concentration, in agreement with the Pisarenko relation. Here, we demonstrate a new strain engineering approach to increase the thermopower of [001] Si/Ge superlattices (SLs) beyond this relation. Using two independent theoretical modeling approaches, we show that new bands form due to the structural symmetry, an…
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In doped semiconductors and metals, the thermopower decreases with increasing carrier concentration, in agreement with the Pisarenko relation. Here, we demonstrate a new strain engineering approach to increase the thermopower of [001] Si/Ge superlattices (SLs) beyond this relation. Using two independent theoretical modeling approaches, we show that new bands form due to the structural symmetry, and, the SL bands are highly tunable with epitaxial substrate strain. The band shifts lead to a modulated thermopower, with a peak $\sim$5-fold enhancement in strained Si/Ge SLs in the high do** regime.
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Submitted 17 July, 2019; v1 submitted 8 July, 2019;
originally announced July 2019.
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Heat and charge transport in bulk semiconductors with interstitial defects
Authors:
Vitaly S. Proshchenko,
Pratik P. Dholabhai,
Sanghamitra Neogi
Abstract:
Interstitial defects are inevitably present in doped semiconductors that enable modern-day electronic, optoelectronic or thermoelectric technologies. Understanding of stability of interstitials and their bonding mechanisms in the silicon lattice was accomplished only recently with the advent of first-principles modeling techniques, supported by powerful experimental methods. However, much less att…
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Interstitial defects are inevitably present in doped semiconductors that enable modern-day electronic, optoelectronic or thermoelectric technologies. Understanding of stability of interstitials and their bonding mechanisms in the silicon lattice was accomplished only recently with the advent of first-principles modeling techniques, supported by powerful experimental methods. However, much less attention has been paid to the effect of different naturally occurring interstitials on the thermal and electrical properties of silicon. In this work, we present a systematic study of the variability of heat and charge transport properties of bulk silicon, in the presence of randomly distributed interstitial defects (Si, Ge, C and Li). We find through atomistic lattice dynamics and molecular dynamics modeling studies that, interstitial defects scatter heat-carrying phonons to suppress thermal transport-1.56% of randomly distributed Ge and Li interstitials reduce the thermal conductivity of silicon by $\sim$ 30 and 34 times, respectively. Using first principles density functional theory and semi-classical Boltzmann transport theory, we compute electronic transport coefficients of bulk Si with 1.56% Ge, C, Si and Li interstitials, in hexagonal, tetrahedral, split-interstitial and bond-centered sites. We demonstrate that hexagonal-Si and hexagonal-Ge interstitials minimally impact charge transport. To complete the study, we predict the thermoelectric property of an experimentally realizable bulk Si sample that contains Ge interstitials in different symmetry sites. Our research establishes a direct relationship between the variability of structures dictated by fabrication processes and heat and charge transport properties of silicon. The relationship provides guidance to accurately estimate performance of Si-based materials for various technological applications.
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Submitted 1 June, 2018;
originally announced June 2018.
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Development of half metallicity within mixed magnetic phase of Cu$_{1-x}$Co$_x$MnSb alloy
Authors:
Abhisek Bandyopadhyay,
Swarup Kumar Neogi,
Atanu Paul,
Carlo Meneghini,
Indra Dasgupta,
Sudipta Bandyopadhyay,
Sugata Ray
Abstract:
Cubic Half-Heusler Cu$_{1-x}$Co$_x$MnSb (0 $\leq$ $x$ $\leq$ 0.1) compounds have been investigated both experimentally and theoretically for their magnetic, transport and electronic properties in search of possible half metallic antiferromagnetism. The systems (Cu,Co)MnSb are of particular interest as the end member alloys CuMnSb and CoMnSb are semi metallic (SM) antiferromagnetic (AFM) and half m…
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Cubic Half-Heusler Cu$_{1-x}$Co$_x$MnSb (0 $\leq$ $x$ $\leq$ 0.1) compounds have been investigated both experimentally and theoretically for their magnetic, transport and electronic properties in search of possible half metallic antiferromagnetism. The systems (Cu,Co)MnSb are of particular interest as the end member alloys CuMnSb and CoMnSb are semi metallic (SM) antiferromagnetic (AFM) and half metallic (HM) ferromagnetic (FM), respectively. Clearly, Co-do** at the Cu-site of CuMnSb introduces changes in the carrier concentration at the Fermi level that may lead to half-metallic ground state but there remains a persistent controversy whether the AFM to FM transition occurs simultaneously. Our experimental results reveal that the AFM to FM magnetic transition occurs through a percolation mechanism where Co-substitution gradually suppresses the AFM phase and forces FM polarization around every dopant cobalt. As a result a mixed magnetic phase is realized within this composition range while a nearly HM band structure is developed already at the 10% Co-do**. Absence of T$^2$ dependence in the resistivity variation at low T-region serves as an indirect proof of opening up an energy gap at the Fermi surface in one of the spin channels. This is further corroborated by the ab-initio electronic structure calculations that suggests a nearly ferromagnetic half-metallic ground state is stabilized by Sb-p holes produced upon Co do**.
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Submitted 6 January, 2018;
originally announced January 2018.
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Native surface oxide turns alloyed silicon membranes into nanophononic metamaterials with ultra-low thermal conductivity
Authors:
Shiyun Xiong,
Daniele Selli,
Sanghamitra Neogi,
Davide Donadio
Abstract:
A detailed understanding of the relation between microscopic structure and phonon propagation at the nan oscale is essential to design materials with desired phononic and thermal properties.Here we uncover a new mechanism of phonon interaction in surface oxidized membranes, i.e., native oxide layers interact with phonons in ultra-thin silicon membranes through local resonances. The local resonance…
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A detailed understanding of the relation between microscopic structure and phonon propagation at the nan oscale is essential to design materials with desired phononic and thermal properties.Here we uncover a new mechanism of phonon interaction in surface oxidized membranes, i.e., native oxide layers interact with phonons in ultra-thin silicon membranes through local resonances. The local resonances reduce the low frequency phonon group velocities and shorten their mean free path. This effect opens up a new strategy for ultralow thermal conductivity design as it complements the scattering mechanism which scatters higher frequency modes effectively. The combination of native oxide layer and alloying with germanium in concentration as small as 5% reduces the thermal conductivity of silicon membranes to 100 time lower than the bulk. In addition, the resonance mechanism produced by native oxide surface layers is particularly effective for thermal condutivity reduction even at very low temperatures, at which only low frequency modes are populated.
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Submitted 8 May, 2017;
originally announced May 2017.
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Lattice dynamics model calculation of Kapitza conductance at solid-fluid interfaces
Authors:
Sanghamitra Neogi,
Gerald D. Mahan
Abstract:
Existing theoretical models of the interfacial thermal conductance, i.e., Kapitza conductance, of insulating solid-fluid interfaces only consider bulk properties, e.g., acoustic mismatch model and diffuse mismatch model. In this work, we propose a classical lattice dynamical model calculation of the Kapitza conductance, thereby incorporating interfacial structural details. In our model, we assume…
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Existing theoretical models of the interfacial thermal conductance, i.e., Kapitza conductance, of insulating solid-fluid interfaces only consider bulk properties, e.g., acoustic mismatch model and diffuse mismatch model. In this work, we propose a classical lattice dynamical model calculation of the Kapitza conductance, thereby incorporating interfacial structural details. In our model, we assume that heat is mostly carried by phonons in the solid, and that sound waves carry diffusive heat from the interface into the bulk of the liquid, where both longitudinal and transverse sound waves are considered. Sound wave dispersion is calculated from the fluid pair distribution function, evaluated using approximate integral equation theories (i.e., Percus-Yevick, Hypernetted-chain approximation). The Kapitza conductance of the solid-fluid interface is obtained from the phonon transmission coefficient at the interface. We determine the interfacial phonon transmission coefficient by solving the coupled equations of motion for the interfacial solid and fluid atoms. As an illustrative example, we derive the Kapitza conductance of solid argon-fluid neon interface, with pair-wise Lennard-Jones interactions.
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Submitted 12 January, 2016;
originally announced January 2016.
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The effect of quenching from different temperatures on Bi 0.88 Sb 0.12 alloy
Authors:
K. Malik,
Diptasikha Das,
S. K. Neogi,
A. K. Deb,
Arup Dasgupta,
S. Bandyopadhyay,
Aritra Banerjee
Abstract:
Structural, thermal, resistive and magnetic properties of melt quenched Bi 0.88 Sb 0.12 alloys are reported. The samples are heated at three different temperatures, followed by rapid quenching in liquid nitrogen. Large temperature difference between liquidus and solidus lines, led to microscopic in-homogeneity in the alloy. The effect of quenching from different temperatures in polycrystalline Bi…
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Structural, thermal, resistive and magnetic properties of melt quenched Bi 0.88 Sb 0.12 alloys are reported. The samples are heated at three different temperatures, followed by rapid quenching in liquid nitrogen. Large temperature difference between liquidus and solidus lines, led to microscopic in-homogeneity in the alloy. The effect of quenching from different temperatures in polycrystalline Bi 0.88 Sb 0.12 alloy has been studied. The parameters such as strain, unit cell volume, and resistivity are found to increase with temperature. Thermal variation of resistivity depicts non monotonic temperature dependence. The total negative susceptibility increases and band gap of semiconducting Bi 0.88 Sb 0.12 samples decreases with increasing temperature.
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Submitted 18 December, 2015;
originally announced December 2015.
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Room temperature multiferroicity in orthorhombic LuFeO$_3$
Authors:
Ujjal Chowdhury,
Sudipta Goswami,
Dipten Bhattacharya,
Jiten Ghosh,
Soumen Basu,
Samya Neogi
Abstract:
From the measurement of dielectric, ferroelectric, and magnetic properties we observe simultaneous ferroelectric and magnetic transitions around $\sim$600 K in orthorhombic LuFeO$_3$. We also observe suppression of the remanent polarization by $\sim$95\% under a magnetic field of $\sim$15 kOe at room temperature. The extent of suppression of the polarization under magnetic field increases monotoni…
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From the measurement of dielectric, ferroelectric, and magnetic properties we observe simultaneous ferroelectric and magnetic transitions around $\sim$600 K in orthorhombic LuFeO$_3$. We also observe suppression of the remanent polarization by $\sim$95\% under a magnetic field of $\sim$15 kOe at room temperature. The extent of suppression of the polarization under magnetic field increases monotonically with the field. These results show that even the orthorhombic LuFeO$_3$ is a room temperature multiferroic of type-II variety exhibiting quite a strong coupling between magnetization and polarization.
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Submitted 27 August, 2014;
originally announced August 2014.
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Control of Intermolecular Bonds by Deposition Rates at Room Temperature: Hydrogen Bonds versus Metal Coordination in Trinitrile Monolayers
Authors:
Thomas Sirtl,
Stefan Schloegl,
Atena Rastgoo-Lahrood,
Jelena Jelic,
Subhadip Neogi,
Michael Schmittel,
Wolfgang M. Heckl,
Karsten Reuter,
Markus Lackinger
Abstract:
Self-assembled monolayers of 1,3,5-tris(4'-biphenyl-4"-carbonitrile)benzene, a large functional trinitrile molecule, on the (111) surfaces of copper and silver under ultrahigh vacuum conditions were studied by scanning tunneling microscopy and low-energy electron diffraction. A densely packed hydrogen-bonded polymorph was equally observed on both surfaces. Additionally, deposition onto Cu(111) yie…
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Self-assembled monolayers of 1,3,5-tris(4'-biphenyl-4"-carbonitrile)benzene, a large functional trinitrile molecule, on the (111) surfaces of copper and silver under ultrahigh vacuum conditions were studied by scanning tunneling microscopy and low-energy electron diffraction. A densely packed hydrogen-bonded polymorph was equally observed on both surfaces. Additionally, deposition onto Cu(111) yielded a well-ordered metal-coordinated porous polymorph that coexisted with the hydrogen-bonded structure. The required coordination centers were supplied by the adatom gas of the Cu(111) surface. On Ag(111), however, the well-ordered metal-coordinated network was not observed. Differences between the adatom reactivities on copper and silver and the resulting bond strengths of the respective coordination bonds are held responsible for this substrate dependence. By utilizing ultralow deposition rates, we demonstrate that on Cu(111) the adatom kinetics plays a decisive role in the expression of intermolecular bonds and hence structure selection.
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Submitted 25 July, 2013;
originally announced July 2013.
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Correlation between defect and magnetism of Ar9+ implanted and un-implanted Zn0.95Mn0.05O thin films suitable for electronic application
Authors:
S. K. Neogi,
N. Midya,
P. Pramanik,
Aritra Banerjee,
A. Bhattacharya,
G. S. Taki,
J. B. M. Krishna,
S. Bandyopadhyay
Abstract:
Sol-gel derived thin films of Zn0.95Mn0.05O have been implanted with Ar9+ ions with doses viz. 5x10e14 ions/cm2 (low), 1x10e15 ions/cm2 (intermediate) and 1x10e16 ions/cm2 (high). Structural, morphological, optical and magnetic properties of the films have been investigated. Structural study confirmed single phase, wurtzite structure of the films. The absence of impurity phase has been confirmed f…
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Sol-gel derived thin films of Zn0.95Mn0.05O have been implanted with Ar9+ ions with doses viz. 5x10e14 ions/cm2 (low), 1x10e15 ions/cm2 (intermediate) and 1x10e16 ions/cm2 (high). Structural, morphological, optical and magnetic properties of the films have been investigated. Structural study confirmed single phase, wurtzite structure of the films. The absence of impurity phase has been confirmed from several measurements. Ion implantation induces a large concentration of point defects into the films as identified from optical study. All films exhibit well above room temperature (RT) intrinsic ferromagnetism (FM) as evidenced from field and temperature dependent magnetization measurements. The magnetization attains the maximum value for high dose of Ar9+ ion implanted film. It shows RT saturation magnetization (MS) value of 0.69emu/gm. The observed FM has been correlated with proportion of intrinsic defects, such as, zinc and oxygen vacancies and the values of MS. Defect induced formation of bound magnetic polaron actually controls the FM. The utility of these films in transparent spin electronic device has also been exhibited.
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Submitted 18 July, 2013;
originally announced July 2013.
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Structural, Morphological, Optical and Magnetic Property of Mn doped Ferromagnetic ZnO thin film
Authors:
R. Karmakar,
S. K. Neogi,
Aritra Banerjee,
S. Bandyopadhyay
Abstract:
The structural, optical and magnetic properties of the Zn1-xMnxO (0 < x < 0.05) thin films synthesized by sol-gel technique have been analyzed in the light of modification of the electronic structure and disorder developed in the samples due to Mn do**. The films are of single phase in nature and no formation of any secondary phase has been detected from structural analysis. Absence of magnetic…
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The structural, optical and magnetic properties of the Zn1-xMnxO (0 < x < 0.05) thin films synthesized by sol-gel technique have been analyzed in the light of modification of the electronic structure and disorder developed in the samples due to Mn do**. The films are of single phase in nature and no formation of any secondary phase has been detected from structural analysis. Absence of magnetic impurity phase in these films confirmed from morphological study also. Increasing tendency of lattice parameters and unit cell volume has been observed with increasing Mn do** concentration. The incorporation of Mn2+ ions introduces disorder in the system. That also leads to slight degradation in crystalline quality of the films with increasing do**. The grain size reduces with increase in Mn do** proportion. The band gaps shows red shift with do** and the width of localized states shows an increasing tendency with do** concentration. It is due to the formation of impurity band and trap** of Mn atoms, which leads to the generation of the defect states within the forbidden band. Photoluminescence (PL) spectra shows gradual decrease of intensity of exitonic and defect related peaks with increasing Mn do**. Defect mediated intrinsic ferromagnetism has been observed even at room temperaturenfor 5at% Mn doped ZnO film. The strong presence of antiferromagnetic (AFM) interaction reduces the observed ferromagnetic moments.
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Submitted 17 October, 2012;
originally announced October 2012.
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Modification of structural and magnetic properties of Zn0.96 Mn0.04O samples by Li3+ ion irradiation
Authors:
S. K. Neogi,
S. Chattapadhyay,
R. Karmakar,
Aritra Banerjee,
S. Bandyopadhyay,
Alok Banerjee
Abstract:
Zn0.96Mn0.04O samples were synthesized by solid state reaction technique to explore their magnetic behavior. Structural, morphological and magnetic properties of the samples have been found to be modified by 50 MeV Li+3 ion beam irradiation. The samples exhibit impurity phase and upon irradiation it disappears. Rietveld refinement analysis indicates that substitutional incorporation of Mn in the h…
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Zn0.96Mn0.04O samples were synthesized by solid state reaction technique to explore their magnetic behavior. Structural, morphological and magnetic properties of the samples have been found to be modified by 50 MeV Li+3 ion beam irradiation. The samples exhibit impurity phase and upon irradiation it disappears. Rietveld refinement analysis indicates that substitutional incorporation of Mn in the host lattice increases with irradiation. Grain size decreases with irradiation. Field dependent magnetization (M-H) measurement explicitly indicates ferromagnetic (FM) nature. It has been established from temperature dependent magnetization (M-T) measurement (500 Oe) and ac susceptibility (χ-T) measurement that ferromagnetism in the system seems to be mainly intrinsic; though superparamagnetic Mn nanoparticles also has a minor role. The analysis of M-T data at comparatively high field (5000-Oe) provides an estimation of antiferromagnetic (AFM) exchange, which acts as a reducing agent for observed magnetic moment. The value of saturation magnetization has been increased upon irradiation and is highly correlated with dissolution of impurity phase. Actually structural property has been modified with ion irradiation and this modification may cause some definite positive change in magnetic property.
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Submitted 25 June, 2012;
originally announced June 2012.
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Effect of 50 MeV Li3+ irradiation on structural and electrical properties of Mn doped ZnO
Authors:
S. K. Neogi,
S. Chattopadhyay,
Aritra Banerjee,
S. Bandyopadhyay,
A. Sarkar,
Ravi Kumar
Abstract:
The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in Zn1-xMnxO type system. Zn1-xMnxO (x = 0.02, 0.04) samples have been synthesized by solid-state reaction method and have been irradiated with 50 MeV Li3+ ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature dependent electri…
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The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in Zn1-xMnxO type system. Zn1-xMnxO (x = 0.02, 0.04) samples have been synthesized by solid-state reaction method and have been irradiated with 50 MeV Li3+ ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. XRD result shows single phase wurtzite structure for Zn0.98Mn0.02O, whereas for Zn0.96Mn0.04O sample an impurity phase has been found apart from the usual peaks of ZnO. Ion irradiation dissolves this impurity peak. Grain size of the samples found to be uniform. For Zn0.98Mn0.02O, the observed sharp decrease in room temperature resistivity (RhoRT) with irradiation is consistent with the lowering of FWHM of the XRD peaks. However for Zn0.96Mn0.04O, RhoRT decreases for initial fluence but increases for further increase of fluence. All the irradiated Zn0.98Mn0.02O samples show metal-semiconductor transition in temperature dependent resistivity measurement at low temperature. But all the irradiated Zn0.96Mn0.04O samples show semiconducting nature in the whole range of temperature. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.
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Submitted 6 May, 2011;
originally announced May 2011.
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Defects induced ferromagnetism in Mn doped ZnO
Authors:
S. Chattopadhyay,
S. K. Neogi,
A. Sarkar,
M. D. Mukadam,
S. M. Yusuf,
Aritra Banerjee,
S. Bandyopadhyay
Abstract:
Single phase Mn doped (2 at %) ZnO samples have been synthesized by solid-state reaction technique. Before the final sintering at 500 C, the mixed powders have been milled for different milling periods (6, 24, 48 and 96 hours). The grain sizes of the samples are very close to each other (~ 32 \pm 4 nm). However, the defective state of the samples is different from each other as manifested from the…
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Single phase Mn doped (2 at %) ZnO samples have been synthesized by solid-state reaction technique. Before the final sintering at 500 C, the mixed powders have been milled for different milling periods (6, 24, 48 and 96 hours). The grain sizes of the samples are very close to each other (~ 32 \pm 4 nm). However, the defective state of the samples is different from each other as manifested from the variation of magnetic properties and electrical resistivity with milling time. All the samples have been found to be ferromagnetic with clear hysteresis loops at room temperature. The maximum value for saturation magnetization (0.11 μ_B / Mn atom) was achieved for 96 hours milled sample. Electrical resistivity has been found to increase with increasing milling time. The most resistive sample bears the largest saturation magnetization. Variation of average positron lifetime with milling time bears a close similarity with that of the saturation magnetization. This indicates the key role played by open volume vacancy defects, presumably zinc vacancies near grain surfaces, in inducing ferromagnetic order in Mn doped ZnO. To attain optimum defect configuration favorable for ferromagnetism in this kind of samples proper choice of milling period and annealing conditions is required.
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Submitted 4 October, 2010;
originally announced October 2010.
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Pair Distribution Function of a Square-Well Fluid
Authors:
Sanghamitra Neogi,
Gerald D. Mahan
Abstract:
The properties of the ground state of liquid $^4$He are studied using a correlated basis function of the form $\prod_{i<j} ψ(r_{ij})$. Here, $ψ(r)$ is chosen as the exact solution of the Schrödinger equation for two $^4$He atoms. A hard-sphere plus an attractive square well is used as the interaction potential between $^4$He atoms. The pair distribution function is calculated using approximate i…
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The properties of the ground state of liquid $^4$He are studied using a correlated basis function of the form $\prod_{i<j} ψ(r_{ij})$. Here, $ψ(r)$ is chosen as the exact solution of the Schrödinger equation for two $^4$He atoms. A hard-sphere plus an attractive square well is used as the interaction potential between $^4$He atoms. The pair distribution function is calculated using approximate integral methods, namely the Percus-Yevick (PY) equation and Hypernetted Chain (HNC) approximation. The values thus obtained are used to calculate the ground state energy, which is found to be -4.886 K using the PY equation. The liquid structure factor is also obtained using the pair distribution function. The values for the pair distribution function and liquid structure factor are compared with experimental results and earlier theoretical calculations.
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Submitted 16 September, 2009;
originally announced September 2009.
