Social Behaviour Understanding using Deep Neural Networks: Development of Social Intelligence Systems
Authors:
Ethan Lim Ding Feng,
Zhi-Wei Neo,
Aaron William De Silva,
Kellie Sim,
Hong-Ray Tan,
Thi-Thanh Nguyen,
Karen Wei Ling Koh,
Wenru Wang,
Hoang D. Nguyen
Abstract:
With the rapid development in artificial intelligence, social computing has evolved beyond social informatics toward the birth of social intelligence systems. This paper, therefore, takes initiatives to propose a social behaviour understanding framework with the use of deep neural networks for social and behavioural analysis. The integration of information fusion, person and object detection, soci…
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With the rapid development in artificial intelligence, social computing has evolved beyond social informatics toward the birth of social intelligence systems. This paper, therefore, takes initiatives to propose a social behaviour understanding framework with the use of deep neural networks for social and behavioural analysis. The integration of information fusion, person and object detection, social signal understanding, behaviour understanding, and context understanding plays a harmonious role to elicit social behaviours. Three systems, including depression detection, activity recognition and cognitive impairment screening, are developed to evidently demonstrate the importance of social intelligence. The study considerably contributes to the cumulative development of social computing and health informatics. It also provides a number of implications for academic bodies, healthcare practitioners, and developers of socially intelligent agents.
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Submitted 19 May, 2021;
originally announced May 2021.
Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions
Authors:
Li Ming Loong,
Xuepeng Qiu,
Zhi Peng Neo,
Praveen Deorani,
Yang Wu,
Charanjit S. Bhatia,
Mark Saeys,
Hyunsoo Yang
Abstract:
While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tun…
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While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical strain, achieving an enhancement factor of ~2 in the experimental tunneling magnetoresistance (TMR) ratio. We further correlate this strain-enhanced TMR with coherent spin tunneling through the MgO barrier. Moreover, the strain-enhanced TMR is analyzed using non-equilibrium Green's function (NEGF) quantum transport calculations. Our results help elucidate the TMR mechanism at the atomic level and can provide a new way to enhance, as well as tune, the quantum properties in nanoscale materials and devices.
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Submitted 2 October, 2014;
originally announced October 2014.
