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Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011)
Authors:
Ming Liu,
Jason Hoffman,
**g Wang,
**xing Zhang,
Brittany Nelson-Cheeseman,
Anand Bhattacharya
Abstract:
A central goal of electronics based on correlated materials or 'Mottronics' is the ability to switch between distinct collective states with a control voltage. Small changes in structure and charge density near a transition can tip the balance between competing phases, leading to dramatic changes in electronic and magnetic properties. In this work, we demonstrate that an electric field induced two…
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A central goal of electronics based on correlated materials or 'Mottronics' is the ability to switch between distinct collective states with a control voltage. Small changes in structure and charge density near a transition can tip the balance between competing phases, leading to dramatic changes in electronic and magnetic properties. In this work, we demonstrate that an electric field induced two-step ferroelastic switching pathway in (011) oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates can be used to tune the Verwey metal-insulator transition in epitaxial Fe3O4 films in a stable and reversible manner. We also observe robust non-volatile resistance switching in Fe3O4 up to room temperature, driven by ferroelastic strain. These results provides a framework for realizing non-volatile and reversible tuning of order parameters coupled to lattice-strain in epitaxial oxide heterostructures over a broad range of temperatures, with potential device applications.
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Submitted 2 July, 2013;
originally announced July 2013.
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Charge transfer and interfacial magnetism in (LaNiO3)n/(LaMnO3)2 superlattices
Authors:
Jason Hoffman,
I. C. Tung,
Brittany Nelson-Cheeseman,
Ming Liu,
John Freeland,
Anand Bhattacharya
Abstract:
(LaNiO3)n/(LaMnO3)2 superlattices were grown using ozone-assisted molecular beam epitaxy, where LaNiO3 is a paramagnetic metal and LaMnO3 is an antiferromagnetic insulator. The superlattices exhibit excellent crystallinity and interfacial roughness of less than 1 unit cell. X-ray spectroscopy and dichroism measurements indicate that electrons are transferred from the LaMnO3 to the LaNiO3, inducing…
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(LaNiO3)n/(LaMnO3)2 superlattices were grown using ozone-assisted molecular beam epitaxy, where LaNiO3 is a paramagnetic metal and LaMnO3 is an antiferromagnetic insulator. The superlattices exhibit excellent crystallinity and interfacial roughness of less than 1 unit cell. X-ray spectroscopy and dichroism measurements indicate that electrons are transferred from the LaMnO3 to the LaNiO3, inducing magnetism in LaNiO3. Magnetotransport measurements reveal a transition from metallic to insulating behavior as the LaNiO3 layer thickness is reduced from 5 unit cells to 2 unit cells and suggest a modulated magnetic structure within LaNiO3.
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Submitted 2 July, 2013; v1 submitted 30 January, 2013;
originally announced January 2013.
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Interface Ferromagnetism in a SrMnO3/LaMnO3 Superlattice
Authors:
S. Smadici,
B. B. Nelson-Cheeseman,
A. Bhattacharya,
P. Abbamonte
Abstract:
Resonant soft x-ray absorption measurements at the O K edge on a SrMnO3/LaMnO3 superlattice show a shoulder at the energy of doped holes, which corresponds to the main peak of resonant scattering from the modulation in the doped hole density. Scattering line shape at the Mn L3,2 edges has a strong variation below the ferromagnetic transition temperature. This variation has a period equal to half t…
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Resonant soft x-ray absorption measurements at the O K edge on a SrMnO3/LaMnO3 superlattice show a shoulder at the energy of doped holes, which corresponds to the main peak of resonant scattering from the modulation in the doped hole density. Scattering line shape at the Mn L3,2 edges has a strong variation below the ferromagnetic transition temperature. This variation has a period equal to half the superlattice superperiod and follows the development of the ferromagnetic moment, pointing to a ferromagnetic phase develo** at the interfaces. It occurs at the resonant energies for Mn3+ and Mn4+ valences. A model for these observations is presented, which includes a double-exchange two-site orbital and the variation with temperature of the hop** frequency tij between the two sites.
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Submitted 18 July, 2012;
originally announced July 2012.
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The role of magnetic anisotropy in spin filter junctions
Authors:
R. V. Chopdekar,
B. B. Nelson-Cheeseman,
M. Liberati,
E. Arenholz,
Y. Suzuki
Abstract:
We have fabricated oxide based spin filter junctions in which we demonstrate that magnetic anisotropy can be used to tune the transport behavior of spin filter junctions. Until recently, spin filters have been largely comprised of polycrystalline materials where the spin filter barrier layer and one of the electrodes are ferromagnetic. These spin filter junctions have relied on the weak magnetic c…
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We have fabricated oxide based spin filter junctions in which we demonstrate that magnetic anisotropy can be used to tune the transport behavior of spin filter junctions. Until recently, spin filters have been largely comprised of polycrystalline materials where the spin filter barrier layer and one of the electrodes are ferromagnetic. These spin filter junctions have relied on the weak magnetic coupling between one ferromagnetic electrode and a barrier layer or the insertion of a nonmagnetic insulating layer in between the spin filter barrier and electrode. We have demonstrated spin filtering behavior in La0.7Sr0.3MnO3/chromite/Fe3O4 junctions without nonmagnetic spacer layers where the interface anisotropy plays a significant role in determining transport behavior. Detailed studies of chemical and magnetic structure at the interfaces indicate that abrupt changes in magnetic anisotropy across the non-isostructural interface is the cause of the significant suppression of junction magnetoresistance in junctions with MnCr2O4 barrier layers.
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Submitted 24 February, 2011;
originally announced February 2011.
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Cation-ordering effects in the single layered manganite La(2/3)Sr(4/3)MnO4
Authors:
B. B. Nelson-Cheeseman,
A. B. Shah,
T. S. Santos,
S. D. Bader,
J. -M. Zuo,
A. Bhattacharya
Abstract:
We have synthesized epitaxial La(1-x)Sr(1+x)MnO4 (x=1/3) films as random alloys and cation-ordered analogues to probe how cation order affects the properties of a 2D manganite. The films show weak ferromagnetic ordering up to 130 K, although there is a dramatic difference in magnetic anisotropy depending on the cation order. While all films exhibit similar gapped insulator behavior above 130 K, th…
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We have synthesized epitaxial La(1-x)Sr(1+x)MnO4 (x=1/3) films as random alloys and cation-ordered analogues to probe how cation order affects the properties of a 2D manganite. The films show weak ferromagnetic ordering up to 130 K, although there is a dramatic difference in magnetic anisotropy depending on the cation order. While all films exhibit similar gapped insulator behavior above 130 K, there is a significant difference in the low temperature transport mechanism depending on the cation order. Differences in magnetic anisotropy and low temperature transport are consistent with differences in Mn 3d orbital occupancies. Together this work suggests that cation ordering can significantly alter the Mn 3d orbital ground state in these correlated electron systems.
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Submitted 5 October, 2010; v1 submitted 2 October, 2010;
originally announced October 2010.
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Potential barrier lowering and electrical transport at the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface
Authors:
Franklin J. Wong,
Miaofang Chi,
Rajesh V. Chopdekar,
Brittany B. Nelson-Cheeseman,
Nigel D. Browning,
Yuri Suzuki
Abstract:
Using a combination of vertical transport measurements across and lateral transport measurements along the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface, we demonstrate that significant potential barrier lowering and band bending are the cause of interfacial metallicity. Barrier lowering and enhanced band bending extends over 2.5 nm into LaAlO$_{3}$ as well as SrTiO$_{3}$. We explain origins of high-t…
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Using a combination of vertical transport measurements across and lateral transport measurements along the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface, we demonstrate that significant potential barrier lowering and band bending are the cause of interfacial metallicity. Barrier lowering and enhanced band bending extends over 2.5 nm into LaAlO$_{3}$ as well as SrTiO$_{3}$. We explain origins of high-temperature carrier saturation, lower carrier concentration, and higher mobility in the sample with the thinnest LaAlO$_{3}$ film on a SrTiO$_{3}$ substrate. Lateral transport results suggest that parasitic interface scattering centers limit the low-temperature lateral electron mobility of the metallic channel.
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Submitted 4 September, 2008;
originally announced September 2008.
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Magnetism of NiMn2O4-Fe3O4 Spinel Interfaces
Authors:
B. B. Nelson-Cheeseman,
R. V. Chopdekar,
J. S. Bettinger,
E. Arenholz,
Y. Suzuki
Abstract:
We investigate the magnetic properties of the isostructural spinel-spinel interface of NiMn2O4(NMO)-Fe3O4. Although the magnetic transition temperature of the NMO film is preserved, both bulk and interface sensitive measurements demonstrate that the interface exhibits strong interfacial magnetic coupling up to room temperature. While NMO thin films have a ferrimagnetic transition temperature of…
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We investigate the magnetic properties of the isostructural spinel-spinel interface of NiMn2O4(NMO)-Fe3O4. Although the magnetic transition temperature of the NMO film is preserved, both bulk and interface sensitive measurements demonstrate that the interface exhibits strong interfacial magnetic coupling up to room temperature. While NMO thin films have a ferrimagnetic transition temperature of 60K, both NiFe2O4 and MnFe2O4 are ferrimagnetic at room temperature. Our experimental results suggest that these magnetic properties arise from a thin interdiffused region of (Fe,Mn,Ni)3O4 at the interface leading to Mn and Ni magnetic properties similar to MnFe2O4 and NiFe2O4.
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Submitted 4 December, 2007; v1 submitted 21 September, 2007;
originally announced September 2007.
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Probing the Role of the Barrier Layer in Magnetic Tunnel Junction Transport
Authors:
B. B. Nelson-Cheeseman,
R. V. Chopdekar,
L. M. B. Alldredge,
J. S. Bettinger,
E. Arenholz,
Y. Suzuki
Abstract:
Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of highly spin polarized La0.7Sr0.3MnO3 and Fe3O4 electrodes with magnetic NiMn2O4 (NMO) insulating barrier layers provide a magnetic tunnel junction system in whic…
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Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of highly spin polarized La0.7Sr0.3MnO3 and Fe3O4 electrodes with magnetic NiMn2O4 (NMO) insulating barrier layers provide a magnetic tunnel junction system in which we can probe the effect of the barrier by comparing junction behavior above and below the Curie temperature of the barrier layer. When the barrier is paramagnetic, the spin polarized transport is dominated by interface scattering and surface spin waves; however, when the barrier is ferrimagnetic, spin flip scattering due to spin waves within the NMO barrier dominates the transport.
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Submitted 4 December, 2007; v1 submitted 19 June, 2007;
originally announced June 2007.
