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First measurement of the nuclear-recoil ionization yield in silicon at 100 eV
Authors:
M. F. Albakry,
I. Alkhatib,
D. Alonso,
D. W. P. Amaral,
P. An,
T. Aralis,
T. Aramaki,
I. J. Arnquist,
I. Ataee Langroudy,
E. Azadbakht,
S. Banik,
P. S. Barbeau,
C. Bathurst,
R. Bhattacharyya,
P. L. Brink,
R. Bunker,
B. Cabrera,
R. Calkins,
R. A. Cameron,
C. Cartaro,
D. G. Cerdeño,
Y. -Y. Chang,
M. Chaudhuri,
R. Chen,
N. Chott
, et al. (115 additional authors not shown)
Abstract:
We measured the nuclear--recoil ionization yield in silicon with a cryogenic phonon-sensitive gram-scale detector. Neutrons from a mono-energetic beam scatter off of the silicon nuclei at angles corresponding to energy depositions from 4\,keV down to 100\,eV, the lowest energy probed so far. The results show no sign of an ionization production threshold above 100\,eV. These results call for furthe…
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We measured the nuclear--recoil ionization yield in silicon with a cryogenic phonon-sensitive gram-scale detector. Neutrons from a mono-energetic beam scatter off of the silicon nuclei at angles corresponding to energy depositions from 4\,keV down to 100\,eV, the lowest energy probed so far. The results show no sign of an ionization production threshold above 100\,eV. These results call for further investigation of the ionization yield theory and a comprehensive determination of the detector response function at energies below the keV scale.
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Submitted 3 March, 2023;
originally announced March 2023.
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Design and Characterization of a Phonon-Mediated Cryogenic Particle Detector with an eV-Scale Threshold and 100 keV-Scale Dynamic Range
Authors:
R. Ren,
C. Bathurst,
Y. Y. Chang,
R. Chen,
C. W. Fink,
Z. Hong,
N. A. Kurinsky,
N. Mast,
N. Mishra,
V. Novati,
G. Spahn,
H. Meyer zu Theenhausen,
S. L. Watkins,
Z. Williams,
M. J. Wilson,
A. Zaytsev,
D. Bauer,
R. Bunker,
E. Figueroa-Feliciano,
M. Hollister,
L. Hsu,
P. Lukens,
R. Mahapatra,
N. Mirabolfathi,
B. Nebolsky
, et al. (5 additional authors not shown)
Abstract:
We present the design and characterization of a cryogenic phonon-sensitive 1-gram Si detector exploiting the Neganov-Trofimov-Luke effect to detect single-charge excitations. This device achieved 2.65(2)~eV phonon energy resolution when operated without a voltage bias across the crystal and a corresponding charge resolution of 0.03 electron-hole pairs at 100~V bias. With a continuous-readout data…
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We present the design and characterization of a cryogenic phonon-sensitive 1-gram Si detector exploiting the Neganov-Trofimov-Luke effect to detect single-charge excitations. This device achieved 2.65(2)~eV phonon energy resolution when operated without a voltage bias across the crystal and a corresponding charge resolution of 0.03 electron-hole pairs at 100~V bias. With a continuous-readout data acquisition system and an offline optimum-filter trigger, we obtain a 9.2~eV threshold with a trigger rate of the order of 20~Hz. The detector's energy scale is calibrated up to 120~keV using an energy estimator based on the pulse area. The high performance of this device allows its application to different fields where excellent energy resolution, low threshold, and large dynamic range are required, including dark matter searches, precision measurements of coherent neutrino-nucleus scattering, and ionization yield measurements.
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Submitted 20 May, 2021; v1 submitted 22 December, 2020;
originally announced December 2020.
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Single Electron-Hole Pair Sensitive Silicon Detector with Surface Event Rejection
Authors:
Ziqing Hong,
Runze Ren,
Noah Kurinsky,
Enectali Figueroa-Feliciano,
Lise Wills,
Suhas Ganjam,
Rupak Mahapatra,
Nader Mirabolfathi,
Brian Nebolsky,
H. Douglas Pinckney,
Mark Platt
Abstract:
We demonstrate single electron-hole pair resolution in a single-sided, contact-free 1 cm$^2$ by 1 mm thick Si crystal operated at 48 mK, with a baseline energy resolution of 3 eV. This crystal can be operated at voltages in excess of $\pm50$ V, resulting in a measured charge resolution of 0.06 electron-hole pairs. The high aluminum coverage ($\sim$70%) of this device allows for the discrimination…
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We demonstrate single electron-hole pair resolution in a single-sided, contact-free 1 cm$^2$ by 1 mm thick Si crystal operated at 48 mK, with a baseline energy resolution of 3 eV. This crystal can be operated at voltages in excess of $\pm50$ V, resulting in a measured charge resolution of 0.06 electron-hole pairs. The high aluminum coverage ($\sim$70%) of this device allows for the discrimination of surface events and separation of events occurring near the center of the detector from those near the edge. We use this discrimination ability to show that non-quantized dark events seen in previous detectors of a similar design are likely dominated by charge leakage along the side wall of the device.
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Submitted 27 February, 2020; v1 submitted 15 March, 2019;
originally announced March 2019.
