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Silicon-doped $β$-Ga$_2$O$_3$ films grown at 1 $μ$m/h by suboxide molecular-beam epitaxy
Authors:
Kathy Azizie,
Felix V. E. Hensling,
Cameron A. Gorsak,
Yunjo Kim,
Daniel M. Dryden,
M. K. Indika Senevirathna,
Selena Coye,
Shun-Li Shang,
Jacob Steele,
Patrick Vogt,
Nicholas A. Parker,
Yorick A. Birkhölzer,
Jonathan P. McCandless,
Debdeep Jena,
Huili G. Xing,
Zi-Kui Liu,
Michael D. Williams,
Andrew J. Green,
Kelson Chabak,
Adam T. Neal,
Shin Mou,
Michael O. Thompson,
Hari P. Nair,
Darrell G. Schlom
Abstract:
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon do** concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiti…
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We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon do** concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of $β$-Ga$_2$O$_3$ by conventional MBE. As a result, a growth rate of ~1 $μ$m/h is readily achieved at a relatively low growth temperature (T$_{sub}$ = 525 $^\circ$C), resulting in films with high structural perfection and smooth surfaces (rms roughness of < 2 nm on ~1 $μ$m thick films). Silicon-containing oxide sources (SiO and SiO$_2$) producing an SiO suboxide molecular beam are used to dope the $β$-Ga$_2$O$_3$ layers. Temperature-dependent Hall effect measurements on a 1 $μ$m thick film with a mobile carrier concentration of 2.7x10$^{17}$ cm$^{-3}$ reveal a room-temperature mobility of 124 cm$^2$ V$^{-1}$ s$^{-1}$ that increases to 627 cm$^2$ V$^{-1}$ s$^{-1}$ at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working MESFETs made from these silicon-doped $β$-Ga$_2$O$_3$ films grown by S-MBE at growth rates of ~1 $μ$m/h.
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Submitted 22 December, 2022;
originally announced December 2022.
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Zeeman Spin-Splitting in the (010) $β$-Ga2O3 Two-Dimensional Electron Gas
Authors:
Adam T. Neal,
Yuewei Zhang,
Said Elhamri,
Siddharth Rajan,
Shin Mou
Abstract:
Through magneto-transport measurements and analysis of the observed Shubnikov de Haas oscillations in (010) (AlxGa1-x)2O3/Ga2O3 heterostructures, spin-splitting of the Landau levels in the (010) Ga2O3 two-dimensional electron gas (2DEG) has been studied. Analysis indicates that the spin-splitting results from the Zeeman effect. By fitting the both the first and second harmonic of the oscillations…
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Through magneto-transport measurements and analysis of the observed Shubnikov de Haas oscillations in (010) (AlxGa1-x)2O3/Ga2O3 heterostructures, spin-splitting of the Landau levels in the (010) Ga2O3 two-dimensional electron gas (2DEG) has been studied. Analysis indicates that the spin-splitting results from the Zeeman effect. By fitting the both the first and second harmonic of the oscillations as a function of magnetic field, we determine the magnitude of the Zeeman splitting to be 0.4$\hbarω_c$, with a corresponding effective g-factor of 2.7, for magnetic field perpendicular to the 2DEG.
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Submitted 6 January, 2020;
originally announced January 2020.
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Donors and Deep Acceptors in $β$-Ga2O3
Authors:
Adam T. Neal,
Shin Mou,
Subrina Rafique,
Hong** Zhao,
Elaheh Ahmadi,
James S. Speck,
Kevin T. Stevens,
John D. Blevins,
Darren B. Thomson,
Neil Moser,
Kelson D. Chabak,
Gregg H. Jessen
Abstract:
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in $β$-Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples grown by a variety of methods, including edge-defined film-fed (EFG), Czochralski (CZ), molecular beam epitaxy (MBE), and low pressure chemical vapor deposition (LPCVD). Through simultaneous, self-consistent fitting of the…
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We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in $β$-Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples grown by a variety of methods, including edge-defined film-fed (EFG), Czochralski (CZ), molecular beam epitaxy (MBE), and low pressure chemical vapor deposition (LPCVD). Through simultaneous, self-consistent fitting of the temperature dependent carrier density and mobility, we are able to accurately estimate the donor energy of Si and Ge to be 30 meV in $β$-Ga2O3. Additionally, we show that our measured Hall effect data are consistent with Si and Ge acting as typical shallow donors, rather than shallow DX centers. High temperature Hall effect measurement of Fe doped $β$-Ga2O3 indicates that the material remains weakly n-type even with the Fe do**, with an acceptor energy of 860 meV relative to the conduction band for the Fe deep acceptor. Van der Pauw measurements of Mg doped Ga2O3 indicate an activation energy of 1.1 eV, as determined from the temperature dependent conductivity.
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Submitted 4 September, 2018;
originally announced September 2018.
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Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV
Authors:
Adam T. Neal,
Shin Mou,
Roberto Lopez,
Jian V. Li,
Darren B. Thomson,
Kelson D. Chabak,
Gregg H. Jessen
Abstract:
Understanding the origin of unintentional do** in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional do** in Ga2O3. Previously unobserved unintentional donors in commercially available (-201) Ga2O3 substrates have been electrically characterize…
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Understanding the origin of unintentional do** in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional do** in Ga2O3. Previously unobserved unintentional donors in commercially available (-201) Ga2O3 substrates have been electrically characterized via temperature dependent Hall effect measurements up to 1000 K and found to have a donor energy of 110 meV. The existence of the unintentional donor is confirmed by temperature dependent admittance spectroscopy, with an activation energy of 131 meV determined via that technique, in agreement with Hall effect measurements. With the concentration of this donor determined to be in the mid to high 10^16 cm^-3 range, elimination of this donor from the drift layer of Ga2O3 power electronics devices will be key to pushing the limits of device performance. Indeed, analytical assessment of the specific on-resistance (Ronsp) and breakdown voltage of Schottky diodes containing the 110 meV donor indicates that incomplete ionization increases Ronsp and decreases breakdown voltage as compared to Ga2O3 Schottky diodes containing only the shallow donor. The reduced performance due to incomplete ionization occurs in addition to the usual tradeoff between Ronsp and breakdown voltage. To achieve 10 kV operation in Ga2O3 Schottky diode devices, analysis indicates that the concentration of 110 meV donors must be reduced below 5x10^14 cm^-3 to limit the increase in Ronsp to one percent.
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Submitted 28 July, 2017; v1 submitted 29 June, 2017;
originally announced June 2017.
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Weak Localization in Few-Layer Black Phosphorus
Authors:
Yuchen Du,
Adam T. Neal,
Hong Zhou,
Peide D. Ye
Abstract:
We have conducted a comprehensive investigation into the magneto-transport properties of few-layer black phosphorus in terms of phase coherence length, phase coherence time, and mobility via weak localization measurement and Hall-effect measurement. We present magnetoresistance data showing the weak localization effect in bare p-type few-layer black phosphorus and reveal its strong dependence on t…
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We have conducted a comprehensive investigation into the magneto-transport properties of few-layer black phosphorus in terms of phase coherence length, phase coherence time, and mobility via weak localization measurement and Hall-effect measurement. We present magnetoresistance data showing the weak localization effect in bare p-type few-layer black phosphorus and reveal its strong dependence on temperature and carrier concentration. The measured weak localization agrees well with the Hikami-Larkin-Nagaoka model and the extracted phase coherence length of 104 nm at 350 mK, decreasing as ~T^-0.51+-0.05 with increased temperature. Weak localization measurement allows us to qualitatively probe the temperature-dependent phase coherence time τ, which is in agreement with the theory of carrier interaction in the diffusive regime. We also observe the universal conductance fluctuation phenomenon in few-layer black phosphorus within moderate magnetic field and low temperature regime.
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Submitted 10 February, 2016;
originally announced February 2016.
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Two-Dimensional TaSe2 Metallic Crystals: Spin-Orbit Scattering Length and Breakdown Current Density
Authors:
Adam T. Neal,
Yuchen Du,
Han Liu,
Peide D. Ye
Abstract:
We have determined the spin-orbit scattering length of two-dimensional layered 2H-TaSe2 metallic crystals by detailed characterization of the weak anti-localization phenomena in this strong spin-orbit interaction material. By fitting the observed magneto-conductivity, the spin-orbit scattering length for 2H-TaSe2 is determined to be 17 nm in the few-layer films. This small spin-orbit scattering le…
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We have determined the spin-orbit scattering length of two-dimensional layered 2H-TaSe2 metallic crystals by detailed characterization of the weak anti-localization phenomena in this strong spin-orbit interaction material. By fitting the observed magneto-conductivity, the spin-orbit scattering length for 2H-TaSe2 is determined to be 17 nm in the few-layer films. This small spin-orbit scattering length is comparable to that of Pt, which is widely used to study the spin Hall effect, and indicates the potential of TaSe2 for use in spin Hall effect devices. In addition to strong spin-orbit coupling, a material must also support large charge currents to achieve spin-transfer-torque via the spin Hall effect. Therefore, we have characterized the room temperature breakdown current density of TaSe2 in air, where the best breakdown current density reaches 3.7$\times$10$^7$ A/cm$^2$. This large breakdown current further indicates the potential of TaSe2 for use in spin-torque devices and two-dimensional device interconnect applications.
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Submitted 16 August, 2014;
originally announced August 2014.
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The Effect of Dielectric Cap** on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights
Authors:
Han Liu,
Adam T. Neal,
Mengwei Si,
Yuchen Du,
Peide D. Ye
Abstract:
Phosphorene is a unique single elemental semiconductor with two-dimensional layered structures. In this letter, we study the transistor behavior on mechanically exfoliated few-layer phosphorene with the top-gate. We achieve a high on-current of 144 mA/mm and hole mobility of 95.6 cm2/Vs. We deposit Al2O3 by atomic layer deposition (ALD) and study the effects of dielectric cap**. We observe that…
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Phosphorene is a unique single elemental semiconductor with two-dimensional layered structures. In this letter, we study the transistor behavior on mechanically exfoliated few-layer phosphorene with the top-gate. We achieve a high on-current of 144 mA/mm and hole mobility of 95.6 cm2/Vs. We deposit Al2O3 by atomic layer deposition (ALD) and study the effects of dielectric cap**. We observe that the polarity of the transistors alternated from p-type to ambipolar with Al2O3 grown on the top. We attribute this transition to the changes for the effective Schottky barrier heights for both electrons and holes at the metal contact edges, which is originated from fixed charges in the ALD dielectric.
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Submitted 12 May, 2014;
originally announced May 2014.
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Phosphorene: A New 2D Material with High Carrier Mobility
Authors:
Han Liu,
Adam T. Neal,
Zhen Zhu,
David Tomanek,
Peide D. Ye
Abstract:
Preceding the current interest in layered materials for electronic applications, research in the 1960's found that black phosphorus combines high carrier mobility with a fundamental band gap. We introduce its counterpart, dubbed few-layer phosphorene, as a new 2D p-type material. Same as graphene and MoS2, phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable…
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Preceding the current interest in layered materials for electronic applications, research in the 1960's found that black phosphorus combines high carrier mobility with a fundamental band gap. We introduce its counterpart, dubbed few-layer phosphorene, as a new 2D p-type material. Same as graphene and MoS2, phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct and appreciable band-gap that depends on the number of layers. Our transport studies indicate a carrier mobility that reflects its structural anisotropy and is superior to MoS2. At room temperature, our phosphorene field-effect transistors with 1.0 um channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm2/Vs, and an on/off ratio up to 1E4. We demonstrate the possibility of phosphorene integration by constructing the first 2D CMOS inverter of phosphorene PMOS and MoS2 NMOS transistors.
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Submitted 16 January, 2014;
originally announced January 2014.
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Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers
Authors:
Han Liu,
Mengwei Si,
Yexin Deng,
Adam T. Neal,
Yuchen Du,
Sina Najmaei,
Pulickel M. Ajayan,
Jun Lou,
Peide D. Ye
Abstract:
In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer length…
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In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer length is ~0.63 μm in the on-state for metal (Ti) contacted single-layer MoS2. These results reveal that MoS2 transistors are Schottky barrier transistors, where the on/off states are switched by the tuning the Schottky barriers at contacts. The effective barrier heights for source and drain barriers are primarily controlled by gate and drain biases, respectively. We discuss the drain induced barrier narrowing effect for short channel devices, which may reduce the influence of large contact resistance for MoS2 Schottky barrier transistors at the channel length scaling limit.
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Submitted 18 December, 2013;
originally announced December 2013.
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Magneto-Transport in MoS2: Phase Coherence, Spin Orbit Scattering and the Hall Factor
Authors:
Adam T. Neal,
Han Liu,
Jiangjiang Gu,
Peide D. Ye
Abstract:
We have characterized phase coherence length, spin orbit scattering length, and the Hall factor in n-type MoS2 2D crystals via weak localization measurements and Hall-effect measurements. Weak localization measurements reveal a phase coherence length of ~50 nm at T = 400 mK for a few-layer MoS2 film, decreasing as T^-1/2 with increased temperatures. Weak localization measurements also allow us, fo…
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We have characterized phase coherence length, spin orbit scattering length, and the Hall factor in n-type MoS2 2D crystals via weak localization measurements and Hall-effect measurements. Weak localization measurements reveal a phase coherence length of ~50 nm at T = 400 mK for a few-layer MoS2 film, decreasing as T^-1/2 with increased temperatures. Weak localization measurements also allow us, for the first time without optical techniques, to estimate the spin orbit scattering length to be 430 nm, pointing to the potential of MoS2 for spintronics applications. Via Hall-effect measurements, we observe a low temperature Hall mobility of 311 cm2/Vs at T = 1 K which decreases as a power law with a characteristic exponent γ=1.5 from 10 K to 60 K. At room temperature, we observe Hall mobility of 24 cm2/Vs. By determining the Hall factor for MoS2 to be 1.35 at T = 1 K and 2.4 at room temperature, we observe drift mobility of 420 cm2/Vs and 56 cm2/Vs at T = 1 K and room temperature, respectively.
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Submitted 2 August, 2013;
originally announced August 2013.
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Molecular Do** of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances
Authors:
Yuchen Du,
Han Liu,
Adam T. Neal,
Mengwei Si,
Peide D. Ye
Abstract:
For the first time, polyethyleneimine (PEI) do** on multilayer MoS2 field-effect transistors are investigated. A 2.6 times reduction in sheet resistance, and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON current, and 50% improvement in extrinsic field-effect mobility. The threshold voltage also…
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For the first time, polyethyleneimine (PEI) do** on multilayer MoS2 field-effect transistors are investigated. A 2.6 times reduction in sheet resistance, and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON current, and 50% improvement in extrinsic field-effect mobility. The threshold voltage also confirms a negative shift upon the molecular do**. All studies demonstrate the feasibility of PEI molecular do** in MoS2 transistors, and its potential applications in layer-structured semiconducting 2D crystals.
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Submitted 7 May, 2014; v1 submitted 29 July, 2013;
originally announced July 2013.
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Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films
Authors:
Han Liu,
Mengwei Si,
Sina Najmaei,
Adam T. Neal,
Yuchen Du,
Pulickel M. Ajayan,
Jun Lou,
Peide D. Ye
Abstract:
Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this letter, we synthesize monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based on dual-gated MoS2 field-effect transist…
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Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this letter, we synthesize monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based on dual-gated MoS2 field-effect transistors. Over 100 devices are studied to obtain a statistical description of device performance in CVD MoS2. We examine and scale down the channel length of the transistors to 100 nm and achieve record high drain current of 62.5 mA/mm in CVD monolayer MoS2 film ever reported. We further extract the intrinsic contact resistance of low work function metal Ti on monolayer CVD MoS2 with an expectation value of 175 Ω.mm, which can be significantly decreased to 10 Ω.mm by appropriate gating. Finally, field-effect mobilities (μFE) of the carriers at various channel lengths are obtained. By taking the impact of contact resistance into account, an average and maximum intrinsic μFE is estimated to be 13.0 and 21.6 cm2/Vs in monolayer CVD MoS2 films, respectively.
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Submitted 4 March, 2013;
originally announced March 2013.
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20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec
Authors:
J. J. Gu,
X. W. Wang,
H. Wu,
J. Shao,
A. T. Neal,
M. J. Manfra,
R. G. Gordon,
P. D. Ye
Abstract:
In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling down to 1.2nm and 20nm, respectively. SS and DIBL as low as 63mV/dec and 7mV/V have been demonstrated, indicating excellent interface quality and scalability. H…
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In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling down to 1.2nm and 20nm, respectively. SS and DIBL as low as 63mV/dec and 7mV/V have been demonstrated, indicating excellent interface quality and scalability. Highest ION = 0.63mA/μm and gm = 1.74mS/μm have also been achieved at VDD=0.5V, showing great promise of InGaAs GAA technology for 10nm and beyond high-speed low- power logic applications.
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Submitted 17 December, 2012;
originally announced December 2012.
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III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D
Authors:
J. J. Gu,
X. W. Wang,
J. Shao,
A. T. Neal,
M. J. Manfra,
R. G. Gordon,
P. D. Ye
Abstract:
In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture. Novel process technology enabling the transition from 3D to 4D structure has been developed and summarized. The successful fabrication of InGaAs lateral and vertical NW arrays has led to 4x increase in MOSFET driv…
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In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture. Novel process technology enabling the transition from 3D to 4D structure has been developed and summarized. The successful fabrication of InGaAs lateral and vertical NW arrays has led to 4x increase in MOSFET drive current. The top-down technology developed in this paper has opened a viable pathway towards future low-power logic and RF transistors with high-density III-V NWs.
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Submitted 17 December, 2012;
originally announced December 2012.
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Channel Length Scaling of MoS2 MOSFETs
Authors:
Han Liu,
Adam T. Neal,
Peide D. Ye
Abstract:
In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 μm down to 50 nm. We compare the short channel behavior of sets of MOSFETs with various channel thickness, and reveal the superior immunity to short channel effects of MoS2 transistors. We observe no obvious short channel effects on the devi…
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In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 μm down to 50 nm. We compare the short channel behavior of sets of MOSFETs with various channel thickness, and reveal the superior immunity to short channel effects of MoS2 transistors. We observe no obvious short channel effects on the device with 100 nm channel length (Lch) fabricated on a 5 nm thick MoS2 2D crystal even when using 300 nm thick SiO2 as gate dielectric, and has a current on/off ratio up to ~109. We also observe the on-current saturation at short channel devices with continuous scaling due to the carrier velocity saturation. Also, we reveal the performance limit of short channel MoS2 transistors is dominated by the large contact resistance from the Schottky barrier between Ni and MoS2 interface, where a fully transparent contact is needed to achieve a high-performance short channel device.
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Submitted 12 September, 2012;
originally announced September 2012.
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Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
Authors:
Jiangjiang J. Gu,
Heng Wu,
Yiqun Liu,
Adam T. Neal,
Roy G. Gordon,
Peide D. Ye
Abstract:
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance and effective mobility due to stronger quantum confinement and the volume inversion effec…
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InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance and effective mobility due to stronger quantum confinement and the volume inversion effect. TCAD quantum mechanical simulation has been carried out to study the inversion charge distribution inside the nanowires. Volume inversion effect appears at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart.
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Submitted 7 April, 2012;
originally announced April 2012.
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Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)
Authors:
Tian Shen,
Adam T. Neal,
Michael L. Bolen,
Jiangjiang Gu,
Lloyd W. Engel,
Michael A. Capano,
Peide Ye
Abstract:
We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k top-gate on the epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic layer deposition process. At low temper…
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We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k top-gate on the epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic layer deposition process. At low temperatures, the devices demonstrate a strong field effect by the top gate with an on/off ratio of ~7 and an electron mobility up to ~3250 cm^2/Vs. After the observation of the half-integer quantum Hall effect for monolayer epitaxial graphene films, detailed magneto-transport measurements have been carried out including varying densities, temperatures, magnetic fields and currents. We study the width of the distinguishable quantum-Hall plateau to plateau transition (Landau level index n=0 to n=1) as temperature (T) and current are varied. For both gate voltage and magnetic field sweeps and T>10 K the transition width goes as T^{-κ} with exponent κ~0.42. This universal scaling exponent agrees well with those found in III-V heterojunctions with short range alloy disorders and in exfoliated graphene.
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Submitted 19 December, 2011; v1 submitted 19 December, 2011;
originally announced December 2011.
