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The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap
Authors:
E. Kirstein,
D. R. Yakovlev,
M. M. Glazov,
E. A. Zhukov,
D. Kudlacik,
I. V. Kalitukha,
V. F. Sapega,
G. S. Dimitriev,
M. A. Semina,
M. O. Nestoklon,
E. L. Ivchenko,
N. E. Kopteva,
D. N. Dirin,
O. Nazarenko,
M. V. Kovalenko,
A. Baumann,
J. Höcker,
V. Dyakonov,
M. Bayer
Abstract:
The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)…
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The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)$_3$, FAPbBr$_3$, FA$_{0.9}$Cs$_{0.1}$PbI$_{2.8}$Br$_{0.2}$) and all-inorganic (CsPbBr$_3$) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10~T at cryogenic temperatures. Further, we use first-principles DFT calculations in combination with tight-binding and $\mathbf k \cdot \mathbf p$ approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.
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Submitted 31 December, 2021;
originally announced December 2021.
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Evidence of large polarons in photoemission band map** of the perovskite semiconductor CsPbBr$_3$
Authors:
M. Puppin,
S. Polishchuk,
N. Colonna,
A. Crepaldi,
D. N. Dirin,
O. Nazarenko,
R. De Gennaro,
G. Gatti,
S. Roth,
T. Barillot,
L. Poletto,
R. P. Xian,
L. Rettig,
M. Wolf,
R. Ernstorfer,
M. V. Kovalenko,
N. Marzari,
M. Grioni,
M. Chergui
Abstract:
Lead-halide perovskite (LHP) semiconductors are emergent optoelectronic materials with outstanding transport properties which are not yet fully understood. We find signatures of large polaron formation in the electronic structure of the inorganic LHP CsPbBr$_3$ by means of angle-resolved photoelectron spectroscopy. The experimental valence band dispersion shows a hole effective mass…
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Lead-halide perovskite (LHP) semiconductors are emergent optoelectronic materials with outstanding transport properties which are not yet fully understood. We find signatures of large polaron formation in the electronic structure of the inorganic LHP CsPbBr$_3$ by means of angle-resolved photoelectron spectroscopy. The experimental valence band dispersion shows a hole effective mass $0.26\pm0.02\,\,m_e$, 50% heavier than the bare mass $m_0 =0.17 m_e$ predicted by density functional theory. Calculations of electron-phonon coupling indicate that phonon dressing of the carriers mainly occurs via distortions of the Pb-Br bond with a Fröhlich coupling parameter $α=1.82$. A good agreement with our experimental data is obtained within the Feynmann polaron model, validating a viable theorical method to predict the carrier effective mass of LHPs ab-initio.
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Submitted 31 August, 2019;
originally announced September 2019.
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High-resolution remote thermography using luminescent low-dimensional tin-halide perovskites
Authors:
Sergii Yakunin,
Bogdan M. Benin,
Yevhen Shynkarenko,
Olga Nazarenko,
Maryna I. Bodnarchuk,
Dmitry N. Dirin,
Christoph Hofer,
Stefano Cattaneo,
Maksym V. Kovalenko
Abstract:
While metal-halide perovskites have recently revolutionized research in optoelectronics through a unique combination of performance and synthetic simplicity, their low-dimensional counterparts can further expand the field with hitherto unknown and practically useful optical functionalities. In this context, we present the strong temperature dependence of the photoluminescence (PL) lifetime of low-…
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While metal-halide perovskites have recently revolutionized research in optoelectronics through a unique combination of performance and synthetic simplicity, their low-dimensional counterparts can further expand the field with hitherto unknown and practically useful optical functionalities. In this context, we present the strong temperature dependence of the photoluminescence (PL) lifetime of low-dimensional, perovskite-like tin-halides, and apply this property to thermal imaging with a high precision of 0.05 °C. The PL lifetimes are governed by the heat-assisted de-trap** of self-trapped excitons, and their values can be varied over several orders of magnitude by adjusting the temperature (up to 20 ns °C-1). Typically, this sensitive range spans up to one hundred centigrade, and it is both compound-specific and shown to be compositionally and structurally tunable from -100 to 110 ° C going from [C(NH2)3]2SnBr4 to Cs4SnBr6 and (C4N2H14I)4SnI6. Finally, through the innovative implementation of cost-effective hardware for fluorescence lifetime imaging (FLI), based on time-of-flight (ToF) technology, these novel thermoluminophores have been used to record thermographic videos with high spatial and thermal resolution.
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Submitted 21 May, 2019;
originally announced May 2019.
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Passivation of Edge States in Etched InAs Sidewalls
Authors:
Christopher Mittag,
Matija Karalic,
Susanne Müller,
Thomas Tschirky,
Werner Wegscheider,
Olga Nazarenko,
Maksym V. Kovalenko,
Thomas Ihn,
Klaus Ensslin
Abstract:
We investigate different methods of passivating sidewalls of wet etched InAs heterostructures in order to suppress inherent edge conduction that is presumed to occur due to band bending at the surface leading to charge carrier accumulation. Passivation techniques including sulfur, positively charged compensation dopants and plasma enhanced chemical vapor deposition of $\mathrm{SiN}_{\mathrm{x}}$ d…
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We investigate different methods of passivating sidewalls of wet etched InAs heterostructures in order to suppress inherent edge conduction that is presumed to occur due to band bending at the surface leading to charge carrier accumulation. Passivation techniques including sulfur, positively charged compensation dopants and plasma enhanced chemical vapor deposition of $\mathrm{SiN}_{\mathrm{x}}$ do not show an improvement. Surprisingly, atomic layer deposition of $\mathrm{Al}_{\mathrm{2}}\mathrm{O}_{\mathrm{3}}$ leads to an increase in edge resistivity of more than an order of magnitude. While the mechanism behind this change is not fully understood, possible reasons are suggested.
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Submitted 23 August, 2017; v1 submitted 6 June, 2017;
originally announced June 2017.
