Altering the magnetic ordering of Fe$_{3}$Ga$_{4}$ via thermal annealing and hydrostatic pressure
Authors:
Brandon Wilfong,
Vaibhav Sharma,
Jared Naphy,
Omar Bishop,
Steven P. Bennett,
Joseph Prestigiacomo,
Radhika Barua,
Michelle E. Jamer
Abstract:
The effects of post-synthesis annealing temperature on arc-melted samples of Fe$_{3}$Ga$_{4}$ has been studied to investigate changes in crystallographic and magnetic properties induced by annealing. Results show a significant trend in the evolution of the (incommensurate spin density wave) ISDW-FM (ferromagnetic) transition temperature as a function of the refined unit cell volume in annealed sam…
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The effects of post-synthesis annealing temperature on arc-melted samples of Fe$_{3}$Ga$_{4}$ has been studied to investigate changes in crystallographic and magnetic properties induced by annealing. Results show a significant trend in the evolution of the (incommensurate spin density wave) ISDW-FM (ferromagnetic) transition temperature as a function of the refined unit cell volume in annealed samples. Strikingly, this trend allowed for the tuning of the transition temperature down to room-temperature (300 K) whilst maintaining a sharp transition in temperature, opening the door to the use of Fe$_{3}$Ga$_{4}$ in functional devices. Crystallographic analysis through Rietveld refinement of high-resolution x-ray diffraction data has showed that arc-melted stoichiometric Fe$_{3}$Ga$_{4}$ is multi-phase regardless of annealing temperature with a minor phase of FeGa$_{3}$ decreasing in phase fraction at higher annealing temperature. In order to validate the trend in ISDW-FM transition temperature with regard to unit cell volume, high pressure magnetometry was performed. This showed that the FM-ISDW ($\sim$ 68 K) and ISDW-FM ($\sim$ 360 K) transition temperatures could be tuned, increased and decreased respectively, linearly with external pressure. Thus, external pressure and the ensuing crystallographic changes minimize the temperature range of the stability of the ISDW pointing toward the importance of structural properties on the mechanism for the formation of the intermediate ISDW phase. These results show how this model system can be tuned as well as highlighting the need for future high-pressure crystallography and related single crystal measurements to understand the mechanism and nature of the intermediate ISDW phase to be exploited in future devices.
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Submitted 20 October, 2021;
originally announced October 2021.
Superconducting and Antiferromagnetic Properties of Dual-Phase V$_3$Ga
Authors:
Michelle E. Jamer,
Brandon Wilfong,
Vasiliy D. Buchelnikov,
Vladimir V. Sokolovskiy,
Olga N. Miroshkina,
Mikhail A. Zagrebin,
Danil R. Baigutlin,
Jared Naphy,
Badih A. Assaf,
Laura H. Lewis,
Aki Pulkkinen,
Bernardo A. Barbiellini,
Arun Bansil,
Don Heiman
Abstract:
The binary compound V$_3$Ga can exhibit two near-equilibrium phases, consisting of the A15 structure that is superconducting, and the Heusler D0$_3$ structure that is semiconducting and antiferromagnetic. Density functional theory calculations show that the two phases are closely degenerate, being separated by only ~10 meV/atom. Magnetization measurements on bulk-grown samples show superconducting…
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The binary compound V$_3$Ga can exhibit two near-equilibrium phases, consisting of the A15 structure that is superconducting, and the Heusler D0$_3$ structure that is semiconducting and antiferromagnetic. Density functional theory calculations show that the two phases are closely degenerate, being separated by only ~10 meV/atom. Magnetization measurements on bulk-grown samples show superconducting behavior below 14 K. These results indicate the possibility of using V$_3$Ga for quantum technology devices utilizing both superconductivity and antiferromagnetism at the same temperature.
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Submitted 28 May, 2020;
originally announced May 2020.
