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First principle investigations of the structural, electronic, and phase stability in 2D layered ZnSb
Authors:
Dinesh Thapa,
Junseong Song,
Vivek Dixit,
Santosh KC,
Bipin Lamichhane,
Chandani N. Nandadasa,
Kimoon Lee,
Sung Wng Kim,
Seong-Gon Kim
Abstract:
Recently, the two dimensional (2D) materials have become a potential candidates for various technological applications in spintronics and optoelectronics. In the present study, the structural, electronic, and phase stability of 2D layered ZnSb compounds of four different phases viz. wurzite(w), tetragonal (t), hexagonal (h), and orthorhombic (o) have been tuned using the first principle calculatio…
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Recently, the two dimensional (2D) materials have become a potential candidates for various technological applications in spintronics and optoelectronics. In the present study, the structural, electronic, and phase stability of 2D layered ZnSb compounds of four different phases viz. wurzite(w), tetragonal (t), hexagonal (h), and orthorhombic (o) have been tuned using the first principle calculations based on density functional theory (DFT). We invoked the Perdew-Burke-Ernzerhof (PBE) functional and the projected augmented wave (PAW) method during all the calculations. Based on our numerical results, we predicted the novel tetragonal phase as stable phase of ZnSb next to existing orthorhombic structure. We reported the pressure induced phase transition between orthorhombic to tetragonal phase at 12.48 GPa/atom. The projected density of states indicates the strong p-d hybridization between Sb-5p and Zn-3d states confirming the nature of strong covalent bonding between them. The electronic band structures suggest that t-ZnSb, w-ZnSb, and h-ZnSb are metallic in nature whereas o-ZnSb is semiconducting with narrow band gap of 0.03 eV using PBE. We predicted the possibility of extracting the two dimensional (2D) monolayer sheet in t-ZnSb and o-ZnSb according to the exfoliation energy criterion. In addition, the 2D monolayer (ML) of o-ZnSb has been predicted to be dynamically stable but that of t-ZnSb is not stable as manifested in phonon dispersion bands. Surprisingly, the semiconducting band gap nature of o-ZnSb changes from indirect and narrow to direct and sizable while going from 3D bulk to 2D ML structure. Further, we estimated the value of work functions for the surfaces of t-ZnSb and o-ZnSb as 4.61 eV and 4.04 eV respectively. Such materials can find the niche applications in next generation electronic devices utilizing 2D hetero-structures.
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Submitted 24 March, 2022; v1 submitted 20 June, 2021;
originally announced June 2021.
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Correlation between site preference and magnetic properties of Zn-Sn-substituted strontium hexaferrite
Authors:
Vivek Dixit,
Dinesh Thapa,
Bipin Lamichhane,
Chandani N. Nandadasa,
Yang-Ki Hong,
Seong-Gon Kim
Abstract:
The site preference and magnetic properties of Zn, Sn and Zn-Sn substituted M-type strontium hexaferrite (SrFe$_{12}$O$_{19}$) have been investigated using first-principles total energy calculations based on density functional theory. The site occupancy of substituted atoms were estimated by calculating the substitution energies of different configurations. The distribution of different configurat…
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The site preference and magnetic properties of Zn, Sn and Zn-Sn substituted M-type strontium hexaferrite (SrFe$_{12}$O$_{19}$) have been investigated using first-principles total energy calculations based on density functional theory. The site occupancy of substituted atoms were estimated by calculating the substitution energies of different configurations. The distribution of different configurations during the annealing process at high temperature was determined using the formation probabilities of configurations to calculate magnetic properties of substituted strontium hexaferrite. We found that the magnetization and magnetocrystalline anisotropy are closely related to the distributions of Zn-Sn ions on the five Fe sites. Our calculation show that in SrFe$_{11.5}$Zn$_{0.5}$O$_{19}$, Zn atoms prefer to occupy $4f_1$, $12k$, and $2a$ sites with occupation probability of 78%, 19% and 3%, respectively, while in SrFe$_{11.5}$SnO$_{19}$, Sn atoms occupy the $12k$ and $4f_2$ sites with occupation probability of 54% and 46%, respectively. We also found that in SrFe$_{11}$Zn$_{0.5}$Sn$_{0.5}$O$_{19}$, (Zn,Sn) atom pairs prefer to occupy the ($4f_1$, $4f_2$), ($4f_1$, $12k$) and ($12k$, $12k$) sites with occupation probability of 82%, 8% and 6%, respectively. Our calculation shows that the increase of magnetization and the reduction of magnetic anisotropy in Zn-Sn substituted M-type strontium hexaferrite as observed experimentally is due to the occupation of (Zn,Sn) pairs at the ($4f_1$, $4f_2$) sites.
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Submitted 19 November, 2018; v1 submitted 9 November, 2018;
originally announced November 2018.
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Site occupancy and magnetic properties of Al-substituted M-type strontium hexaferrite
Authors:
Vivek Dixit,
Chandani N. Nandadasa,
Seong-Gon Kim,
Sungho Kim,
Jihoon Park,
Yang-Ki Hong,
Laalitha S. I. Liyanage,
Amitava Moitra
Abstract:
We use first-principles total-energy calculations based on density functional theory to study the site occupancy and magnetic properties of Al-substituted $M$-type strontium hexaferrite SrFe$_{12-x}$Al$_{x}$O$_{19}$ with $x=0.5$ and $x=1.0$. We find that the non-magnetic Al$^{3+}$ ions preferentially replace Fe$^{3+}$ ions at two of the majority spin sites, $2a$ and $12k$, eliminating their positi…
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We use first-principles total-energy calculations based on density functional theory to study the site occupancy and magnetic properties of Al-substituted $M$-type strontium hexaferrite SrFe$_{12-x}$Al$_{x}$O$_{19}$ with $x=0.5$ and $x=1.0$. We find that the non-magnetic Al$^{3+}$ ions preferentially replace Fe$^{3+}$ ions at two of the majority spin sites, $2a$ and $12k$, eliminating their positive contribution to the total magnetization causing the saturation magnetization $M_s$ to be reduced as Al concentration $x$ is increased. Our formation probability analysis further provides the explanation for increased magnetic anisotropy field when the fraction of Al is increased. Although Al$^{3+}$ ions preferentially occupy the $2a$ sites at a low temperature, the occupation probability of the $12k$ site increases with the rise of the temperature. At a typical annealing temperature ($> 700\,^{\circ}{\rm C}$) Al$^{3+}$ ions are much more likely to occupy the $12k$ site than the $2a$ site. Although this causes the magnetocrystalline anisotropy $K_1$ to be reduced slightly, the reduction in $M_s$ is much more significant. Their combined effect causes the anisotropy field $H_a$ to increase as the fraction of Al is increased, consistent with recent experimental measurements.
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Submitted 27 April, 2015; v1 submitted 9 April, 2015;
originally announced April 2015.
