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Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration
Authors:
M. H. Shao,
H. F. Liu,
R. He,
X. M. Li,
L. Wu,
J. Ma,
X. C. Hu,
R. T. Zhao,
Z. C. Zhong,
Y. Yu,
C. H. Wan,
Y. Yang,
C. -W. Nan,
X. D. Bai,
T. -L. Ren,
X. Renshaw Wang
Abstract:
Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation of the metastable ferroelectric phase and the polarization degradation during field cycling, the ability of oxygen vacancy to exactly engineer and switch polariz…
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Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation of the metastable ferroelectric phase and the polarization degradation during field cycling, the ability of oxygen vacancy to exactly engineer and switch polarization remains to be elucidated. Here we report reversibly electrochemical control of ferroelectricity in Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) heterostructures with a mixed ionic-electronic LaSrMnO$_3$ electrode, achieving a hard breakdown field more than 18 MV/cm, over fourfold as high as that of typical HZO. The electrical extraction and insertion of oxygen into HZO is macroscopically characterized and atomically imaged in situ. Utilizing this reversible process, we achieved multiple polarization states and even repeatedly repaired the damaged ferroelectricity by reversed negative electric fields. Our study demonstrates the robust and switchable ferroelectricity in hafnia oxide distinctly associated with oxygen vacancy and opens up opportunities to recover, manipulate, and utilize rich ferroelectric functionalities for advanced ferroelectric functionality to empower the existing Si-based electronics such as multi-bit storage.
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Submitted 20 June, 2021;
originally announced June 2021.
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Systematic changes of the electronic structure of the diluted ferromagnetic oxide Li-doped Ni$_{1-x}$Fe$_x$O with hole do**
Authors:
M. Kobayashi,
J. I. Hwang,
G. S. Song,
Y. Ooki,
M. Takizawa,
A. Fujimori,
Y. Takeda,
S. -I. Fujimori,
K. Terai,
T. Okane,
Y. Saitoh,
H. Yamagami,
Y. -H. Lin,
C. -W. Nan
Abstract:
The electronic structure of Li-doped Ni$_{1-x}$Fe$_x$O has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ni $2p$ core-level PES and XAS spectra were not changed by Li do**. In contrast, the Fe$^{3+}$ intensity increased with Li do** relative to the Fe$^{2+}$ intensity. However, the increase of Fe$^{3+}$ is only $\sim 5%$ of the doped Li…
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The electronic structure of Li-doped Ni$_{1-x}$Fe$_x$O has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ni $2p$ core-level PES and XAS spectra were not changed by Li do**. In contrast, the Fe$^{3+}$ intensity increased with Li do** relative to the Fe$^{2+}$ intensity. However, the increase of Fe$^{3+}$ is only $\sim 5%$ of the doped Li content, suggesting that most of the doped holes enter the O $2p$ and/or the charge-transferred configuration Ni $3d^8\underline{L}$. The Fe 3d partial density of states and the host valence-band emission near valence-band maximum increased with Li content, consistent with the increase of electrical conductivity. Based on these findings, percolation of bound magnetic polarons is proposed as an origin of the ferromagnetic behavior.
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Submitted 29 November, 2007;
originally announced November 2007.
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Phase Change Observed in Ultrathin Ba0.5Sr0.5TiO3 Films by in-situ Resonant Photoemission Spectroscopy
Authors:
Y. -H. Lin,
K. Terai,
H. Wadati,
M. Kobayashi,
M. Takizawa,
J. I. Hwang,
A. Fujimori,
C. -W. Nan,
J. -F. Li,
S. -I. Fujimori,
T. Okane,
Y. Saitoh,
K. Kobayashi
Abstract:
Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100)substrates by the pulsed laser deposition technique, and were studied by measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band region as a function of film thickness, both at room temperature and low temperature. Our results demonstrated an abrupt variation in the spectral structures between 2.8 nm (~…
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Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100)substrates by the pulsed laser deposition technique, and were studied by measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band region as a function of film thickness, both at room temperature and low temperature. Our results demonstrated an abrupt variation in the spectral structures between 2.8 nm (~7 monolayers) and 2.0 nm (~5 monolayers) Ba0.5Sr0.5TiO3 films, suggesting that there exists a critical thickness for phase change in the range of 2.0 nm to 2.8 nm. This may be ascribed mainly to the intrinsic size effects.
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Submitted 24 May, 2007;
originally announced May 2007.
