Showing 1–8 of 8 results for author: Nakatsuji, K

Twisted bilayer graphene fabricated by direct bonding in a high vacuum

Authors: Hitoshi Imamura, Anton Visikovskiy, Ryosuke Uotani, Takashi Kajiwara, Hiroshi Ando, Takushi Iimori, Kota Iwata, Toshio Miyamachi, Kan Nakatsuji, Kazuhiko Mase, Tetsuroh Shirasawa, Fumio Komori, Satoru Tanaka

Abstract: Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TBG is normally produced in air by the tear-and-stack method of mechanical exfoliation and transferring graphene flakes, by which a sizable, millimeter-order area, and importantly clean interface between layers are hard to… ▽ More Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TBG is normally produced in air by the tear-and-stack method of mechanical exfoliation and transferring graphene flakes, by which a sizable, millimeter-order area, and importantly clean interface between layers are hard to obtain. In this study, we resolved these problems by directly transferring the easy-to-exfoliate CVD-grown graphene on SiC substrate to graphene in a high vacuum without using any transfer assisting medium and observed electronic band modulations due to the strong interlayer coupling. △ Less

Submitted 9 May, 2020; v1 submitted 4 May, 2020; originally announced May 2020.

Deviation from Fermi-liquid behavior in two-dimensional surface states of Au-induced nanowires on Ge(001) by correlation and localization

Authors: K. Yaji, R. Yukawa, S. Kim, Y. Ohtsubo, P. Le Fèvre, F. Bertran, A. Taleb-Ibrahimi, I. Matsuda, K. Nakatsuji, F. Komori

Abstract: The electronic states of Au-induced atomic nanowires on Ge(001) (Au/Ge(001) NWs) have been investigated by angle-resolved photoelectron spectroscopy with linearly polarized light. We have found three electron pockets around $\bar{J}\bar{K}$, where the Fermi surfaces are closed in a surface Brillouin zone, indicating that the surface states of Au/Ge(001) NWs are two-dimensional whereas the atomic s… ▽ More The electronic states of Au-induced atomic nanowires on Ge(001) (Au/Ge(001) NWs) have been investigated by angle-resolved photoelectron spectroscopy with linearly polarized light. We have found three electron pockets around $\bar{J}\bar{K}$, where the Fermi surfaces are closed in a surface Brillouin zone, indicating that the surface states of Au/Ge(001) NWs are two-dimensional whereas the atomic structure is one-dimensional. The two-dimensional metallic states exhibit remarkable suppression of the photoelectron intensity near a Fermi energy. This suppression can be explained by the correlation and localization effects in disordered metals, which is a deviation from a Fermi-liquid model. △ Less

Submitted 16 February, 2016; originally announced February 2016.

Comments: 5 pages, 4 figures

Atomic scale variation of electron tunneling into a Luttinger liquid ? : High resolution scanning tunneling spectroscopy study on Au/Ge(001)

Authors: Jewook Park, Kan Nakatsuji, Tae-Hwan Kim, Sun Kyu Song, Fumio Komori, Han Woong Yeom

Abstract: Au-induced atomic wires on the Ge(001) surface were recently claimed to be an ideal 1D metal and their tunneling spectra were analyzed as the manifestation of a Tomonaga-Luttinger liquid (TLL) state. We reinvestigate this system for atomically well-ordered areas of the surface with high resolution scanning tunneling microscopy and spectroscopy (STS). The local density-of-states maps do not provide… ▽ More Au-induced atomic wires on the Ge(001) surface were recently claimed to be an ideal 1D metal and their tunneling spectra were analyzed as the manifestation of a Tomonaga-Luttinger liquid (TLL) state. We reinvestigate this system for atomically well-ordered areas of the surface with high resolution scanning tunneling microscopy and spectroscopy (STS). The local density-of-states maps do not provide any evidence of a metallic 1D electron channel along the wires. Moreover, the atomically resolved tunneling spectra near the Fermi energy are dominated by local density-of-states features, deviating qualitatively from the power-law behavior. On the other hand, the defects strongly affect the tunneling spectra near the Fermi level. These results do not support the possibility of a TLL state for this system. An 1D metallic system with well-defined 1D bands and without defects are required for the STS study of a TLL state. △ Less

Submitted 17 September, 2014; originally announced September 2014.

Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy

Authors: Takashi Kajiwara, Yuzuru Nakamori, Anton Visikovskiy, Takushi Iimori, Fumio Komori, Kan Nakatsuji, Kazuhiko Mase, Satoru Tanaka

Abstract: We present a new method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consist of ordered pairs of (0001) terraces and nanofacets. Controlled selective growth of graphene on approximately 10 nm wide of (0001) terraces with 10 nm spatial intervals allows GNR formation. By selecting the vicinal direction of SiC substrate,… ▽ More We present a new method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consist of ordered pairs of (0001) terraces and nanofacets. Controlled selective growth of graphene on approximately 10 nm wide of (0001) terraces with 10 nm spatial intervals allows GNR formation. By selecting the vicinal direction of SiC substrate, [1-100], well-ordered GNRs with predominantly armchair edges are obtained. These structures, the high density GNRs, enable us to observe the electronic structure at K-points by angle-resolved photoemission spectroscopy, showing clear band-gap opening of at least 0.14 eV. △ Less

Submitted 16 October, 2012; originally announced October 2012.

Comments: 4 pages, 5 figures

Direct map** of the spin-filtered surface bands of a three-dimensional quantum spin Hall insulator

Authors: Akinori Nishide, Alexey A. Taskin, Yasuo Takeichi, Taichi Okuda, Akito Kakizaki, Toru Hirahara, Kan Nakatsuji, Fumio Komori, Yoichi Ando, Iwao Matsuda

Abstract: Spin-polarized band structure of the three-dimensional quantum spin Hall insulator $\rm Bi_{1-x}Sb_{x}$ (x=0.12-0.13) was fully elucidated by spin-polarized angle-resolved photoemission spectroscopy using a high-yield spin polarimeter equipped with a high-resolution electron spectrometer. Between the two time-reversal-invariant points, $\bar{\varGamma}$ and $\bar{M}$, of the (111) surface Brillo… ▽ More Spin-polarized band structure of the three-dimensional quantum spin Hall insulator $\rm Bi_{1-x}Sb_{x}$ (x=0.12-0.13) was fully elucidated by spin-polarized angle-resolved photoemission spectroscopy using a high-yield spin polarimeter equipped with a high-resolution electron spectrometer. Between the two time-reversal-invariant points, $\bar{\varGamma}$ and $\bar{M}$, of the (111) surface Brillouin zone, a spin-up band ($Σ_3$ band) was found to cross the Fermi energy only once, providing unambiguous evidence for the strong topological insulator phase. The observed spin-polarized band dispersions determine the "mirror chirality" to be -1, which agrees with the theoretical prediction based on first-principles calculations. △ Less

Submitted 13 February, 2009; originally announced February 2009.

Journal ref: Physical Review B 81, 041309(R) (2010)

STM observation of initial growth of Sn atoms on Ge(001) surface

Authors: K. Tomatsu, K. Nakatsuji, T. Iimori, F. Komori

Abstract: We have studied initial growth of Sn atoms on Ge(001) surfaces at room temperature and 80 K by scanning tunneling microscopy. For Sn deposition onto the Ge(001) substrate at room temperature, the Sn atoms form two kinds of one-dimensional structures composed of ad-dimers with different alignment, in the <310> and the <110> directions, and epitaxial structures. For Sn deposition onto the substrat… ▽ More We have studied initial growth of Sn atoms on Ge(001) surfaces at room temperature and 80 K by scanning tunneling microscopy. For Sn deposition onto the Ge(001) substrate at room temperature, the Sn atoms form two kinds of one-dimensional structures composed of ad-dimers with different alignment, in the <310> and the <110> directions, and epitaxial structures. For Sn deposition onto the substrate at 80 K, the population of the dimer chains aligning in the <310> direction increases. The diffusion barrier of the Sn adatom on the substrate kinetically determines the population of the dimer chain. We propose that the diffusion barrier height depends on surface strain induced by the adatom. The two kinds of dimer chains appearing on the Ge(001) and Si(001) surfaces with adatoms of the group-IV elements are systematically interpreted in terms of the surface stain. △ Less

Submitted 22 January, 2007; originally announced January 2007.

Comments: 12 figures

Report number: SUSC-D-06-00808

Nonlocal Manipulation of Dimer Motion at Ge(001) Clean Surface via Hot Carriers in the Surface States

Authors: Yasumasa Takagi, Yoshihide Yoshimoto, Kan Nakatsuji, Fumio Komori

Abstract: Nonlocal one-dimensional motions of a topological defect are induced by electron tunneling through the dangling-bond states on the clean Ge(001) surface using scanning tunneling microscopy below 80 K. The direction of the motion depends both on the energy of the carriers in the surface state and on the distance between the defect and the tunneling point. The results are interpreted using an elec… ▽ More Nonlocal one-dimensional motions of a topological defect are induced by electron tunneling through the dangling-bond states on the clean Ge(001) surface using scanning tunneling microscopy below 80 K. The direction of the motion depends both on the energy of the carriers in the surface state and on the distance between the defect and the tunneling point. The results are interpreted using an electronic excitation model by hot carriers injected to the surface states. The critical distance of the motion is anisotropic and consistent with the band structure of the surface states. △ Less

Submitted 3 October, 2005; originally announced October 2005.

Comments: 4 pages, 4 figures, to be published in J. Phys. Soc. Japan

Local and Reversible Change of the Reconstruction on Ge(001) Surface between c(4x2) and p(2x2) by Scanning Tunneling Microscopy

Authors: Yasumasa Takagi, Yoshihide Yoshimoto, Kan Nakatsuji, Fumio Komori

Abstract: The reconstruction on Ge(001) surface is locally and reversibly changed between c(4x2) and p(2x2) by controlling the bias voltage of a scanning tunneling microscope (STM) at 80K. It is c(4x2) with the sample bias voltage V_b =< -0.7V. This structure can be kept with V_b =< 0.6V. When V_b is higher than 0.8V during the scanning, the structure changes to p(2x2). This structure is then maintained w… ▽ More The reconstruction on Ge(001) surface is locally and reversibly changed between c(4x2) and p(2x2) by controlling the bias voltage of a scanning tunneling microscope (STM) at 80K. It is c(4x2) with the sample bias voltage V_b =< -0.7V. This structure can be kept with V_b =< 0.6V. When V_b is higher than 0.8V during the scanning, the structure changes to p(2x2). This structure is then maintained with V_b >= - 0.6V. The observed local change of the reconstruction with hysteresis is ascribed to inelastic scattering during the electron tunneling in the electric field under the STM-tip. △ Less

Submitted 25 March, 2003; originally announced March 2003.

Comments: 4 pages, 4 figures, submitted to Phys. Rev. Lett