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Variation of strong correlation effects in A-site ordered perovskites CaCu3Ti4-xRuxO12: Photoemission and inverse photoemission studies
Authors:
H. J. Im,
M. Iwataki,
M. Tsunekawa,
T. Watanabe,
H. Sato,
M. Nakatake,
S. Kimura
Abstract:
We have systematically studied the strong correlation effects in A-site ordered perovskites CaCu3Ti4-xRuxO12 (x = 0, 1, 3.5, and 4) by using photoemission and inverse photoemission spectroscopies. In x = 0, 1, 3.5, the peak positions of the strongly correlated Cu 3d states around -3.8 eV and Ti 3d states around 3.6 eV little change. On the other hand, in x = 4, the Cu 3d states split into two peak…
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We have systematically studied the strong correlation effects in A-site ordered perovskites CaCu3Ti4-xRuxO12 (x = 0, 1, 3.5, and 4) by using photoemission and inverse photoemission spectroscopies. In x = 0, 1, 3.5, the peak positions of the strongly correlated Cu 3d states around -3.8 eV and Ti 3d states around 3.6 eV little change. On the other hand, in x = 4, the Cu 3d states split into two peaks around -2.5 and -4 eV. These indicate that Ti plays an important role to retain the strong correlation effects. In addition, the multiplet structures of Cu 3d final states from -8 to -14 eV become weak as Ru increases, indicating the reduction of the localized characters of Cu 3d states. At the Fermi level, we observe the absence of spectral weight in x = 0, 1 and the development of Ru 4d in-gap states in x = 3.5, 4, which give rise to the metal-insulator transition between x = 1 and x = 3.5.
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Submitted 8 March, 2023; v1 submitted 20 July, 2020;
originally announced July 2020.
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Prolonged photo-carriers generated in a massive-and-anisotropic Dirac material
Authors:
Munisa Nurmamat,
Yukiaki Ishida,
Ryohei Yori,
Kazuki Sumida,
Siyuan Zhu,
Masashi Nakatake,
Yoshifumi Ueda,
Masaki Taniguchi,
Shik Shin,
Yuichi Akahama,
Akio Kimura
Abstract:
Transient electron-hole pairs generated in semiconductors can exhibit unconventional excitonic condensation. Anisotropy in the carrier mass is considered as the key to elongate the life time of the pairs, and hence to stabilize the condensation. Here we employ time- and angle-resolved photoemission spectroscopy to explore the dynamics of photo-generated carriers in black phosphorus. The electronic…
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Transient electron-hole pairs generated in semiconductors can exhibit unconventional excitonic condensation. Anisotropy in the carrier mass is considered as the key to elongate the life time of the pairs, and hence to stabilize the condensation. Here we employ time- and angle-resolved photoemission spectroscopy to explore the dynamics of photo-generated carriers in black phosphorus. The electronic structure above the Fermi level has been successfully observed, and a massive-and-anisotropic Dirac-type dispersions are confirmed; more importantly, we directly observe that the photo-carriers generated across the direct band gap have the life time exceeding 400 ps. Our finding confirms that black phosphorus is a suitable platform for excitonic condensations, and also open an avenue for future applications in broadband mid-infrared BP-based optoelectronic devices.
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Submitted 31 May, 2018;
originally announced May 2018.
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Evidence of Topological Surface State in Three-Dimensional Dirac Semimetal Cd3As2
Authors:
Hemian Yi,
Zhijun Wang,
Chaoyu Chen,
Youguo Shi,
Ya Feng,
Aiji Liang,
Zhuo** Xie,
Shaolong He,
Junfeng He,
Yingying Peng,
Xu Liu,
Yan Liu,
Lin Zhao,
Guodong Liu,
Xiaoli Dong,
Jun Zhang,
M. Nakatake,
M. Arita,
K. Shimada,
H. Namatame,
M. Taniguchi,
Zuyan Xu,
Chuangtian Chen,
Xi Dai,
Zhong Fang
, et al. (1 additional authors not shown)
Abstract:
The three-dimensional topological semimetals represent a new quantum state of matter. Distinct from the surface state in the topological insulators that exhibits linear dispersion in two-dimensional momentum plane, the three-dimensional semimetals host bulk band dispersions linearly along all directions, forming discrete Dirac cones in three-dimensional momentum space. In addition to the gapless p…
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The three-dimensional topological semimetals represent a new quantum state of matter. Distinct from the surface state in the topological insulators that exhibits linear dispersion in two-dimensional momentum plane, the three-dimensional semimetals host bulk band dispersions linearly along all directions, forming discrete Dirac cones in three-dimensional momentum space. In addition to the gapless points (Weyl/Dirac nodes) in the bulk, the three-dimensional Weyl/Dirac semimetals are also characterized by "topologically protected" surface state with Fermi arcs on their specific surface. The Weyl/Dirac semimetals have attracted much attention recently they provide a venue not only to explore unique quantum phenomena but also to show potential applications. While Cd3As2 is proposed to be a viable candidate of a Dirac semimetal, more experimental evidence and theoretical investigation are necessary to pin down its nature. In particular, the topological surface state, the hallmark of the three-dimensional semimetal, has not been observed in Cd3As2. Here we report the electronic structure of Cd3As2 investigated by angle-resolved photoemission measurements on the (112) crystal surface and detailed band structure calculations. The measured Fermi surface and band structure show a good agreement with the band structure calculations with two bulk Dirac-like bands approaching the Fermi level and forming Dirac points near the Brillouin zone center. Moreover, the topological surface state with a linear dispersion approaching the Fermi level is identified for the first time. These results provide strong experimental evidence on the nature of topologically non-trivial three-dimensional Dirac cones in Cd3As2.
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Submitted 22 May, 2014;
originally announced May 2014.
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Experimental verification of the surface termination in the topological insulator TlBiSe$_{2}$ using core-level photoelectron spectroscopy and scanning tunneling microscopy
Authors:
Kenta Kuroda,
Mao Ye,
Eike F. Schwier,
Munisa Nurmamat,
Kaito Shirai,
Masashi Nakatake,
Shigenori Ueda,
Koji Miyamoto,
Taichi Okuda,
Hirofumi Namatame,
Masaki Taniguchi,
Yoshifumi Ueda,
Akio Kimura
Abstract:
The surface termination of the promising topological insulator TlBiSe$_{2}$ has been studied by surface and bulk sensitive probes. Our scanning tunneling microscopy has unmasked for the first time the unusual surface morphology of TlBiSe$_{2}$ obtained by cleaving, where islands are formed by residual atoms on the cleaved plane. The chemical condition of these islands was identified using core-lev…
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The surface termination of the promising topological insulator TlBiSe$_{2}$ has been studied by surface and bulk sensitive probes. Our scanning tunneling microscopy has unmasked for the first time the unusual surface morphology of TlBiSe$_{2}$ obtained by cleaving, where islands are formed by residual atoms on the cleaved plane. The chemical condition of these islands was identified using core-level spectroscopy. We observed thallium core-level spectra that are strongly deformed by a surface component in sharp contrast to the other elements. We propose a simple explanation for this behavior by assuming that the sample cleaving breaks the bonding between thallium and selenium atoms, leaving the thallium layer partially covering the selenium layer. These findings will assist the interpretation of future experimental and theoretical studies on this surface.
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Submitted 25 July, 2013;
originally announced July 2013.
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Unoccupied topological surface state in Bi$_{2}$Te$_{2}$Se
Authors:
Munisa Nurmamat,
E. E. Krasovskii,
K. Kuroda,
M. Ye,
K. Miyamoto,
M. Nakatake,
T. Okuda,
H. Namatame,
H. Namatame,
M. Taniguchi,
E. V. Chulkov,
K. A. Kokh,
O. E. Tereshchenko,
A. Kimura
Abstract:
Bias voltage dependent scattering of the topological surface state is studied by scanning tunneling microscopy/spectroscopy for a clean surface of the topological insulator Bi$_2$Te$_2$Se. A strong war** of constant energy contours in the unoccupied part of the spectrum is found to lead to a spin-selective scattering. The topological surface state persists to higher energies in the unoccupied ra…
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Bias voltage dependent scattering of the topological surface state is studied by scanning tunneling microscopy/spectroscopy for a clean surface of the topological insulator Bi$_2$Te$_2$Se. A strong war** of constant energy contours in the unoccupied part of the spectrum is found to lead to a spin-selective scattering. The topological surface state persists to higher energies in the unoccupied range far beyond the Dirac point, where it coexists with the bulk conduction band. This finding sheds light on the spin and charge dynamics over the wide energy range and opens a way to designing opto-spintronic devices.
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Submitted 9 May, 2013;
originally announced May 2013.
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Relocation of the topological surface state of Bi$_{2}$Se$_{3}$ beneath the surface by Ag intercalation
Authors:
M. Ye,
S. V. Eremeev,
K. Kuroda,
M. Nakatake,
S. Kim,
Y. Yamada,
E. E. Krasovskii,
E. V. Chulkov,
M. Arita,
H. Miyahara,
T. Maegawa,
K. Okamoto,
K. Miyamoto,
T. Okuda,
K. Shimada,
H. Namatame,
M. Taniguchi,
Y. Ueda,
A. Kimura
Abstract:
We studied the Ag-intercalated 3D topological insulator Bi$_{2}$Se$_{3}$ by scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, combined with a first principles calculations. We demonstrate that silver atoms deposited on the surface of Bi$_{2}$Se$_{3}$ are intercalated between the quintuple layer (QL) units of the crystal, causing a expansion of the van der Wa…
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We studied the Ag-intercalated 3D topological insulator Bi$_{2}$Se$_{3}$ by scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, combined with a first principles calculations. We demonstrate that silver atoms deposited on the surface of Bi$_{2}$Se$_{3}$ are intercalated between the quintuple layer (QL) units of the crystal, causing a expansion of the van der Waals gaps and the detachment of topmost QLs from the bulk crystal. This leads to a relocation (in the real space) of the the topological state beneath the detached quintuple layers, accompanied by the emergence of parabolic and "M-shaped" trivial bands localized above the relocated topological states. These novel findings open a pathway to the engineering of Dirac fermions shielded from the ambient contamination and may facilitate the realization of fault-tolerant quantum devices.
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Submitted 26 December, 2011;
originally announced December 2011.
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Quasiparticle interference on the surface of 3D topological insulator Bi$_{2}$Se$_{3}$ induced by cobalt adatom in the absence of ferromagnetic ordering
Authors:
M. Ye,
S. V. Eremeev,
K. Kuroda,
E. E. Krasovskii,
E. V. Chulkov,
Y. Takeda,
Y. Saitoh,
K. Okamoto,
S. Y. Zhu,
K. Miyamoto,
M. Arita,
M. Nakatake,
T. Okuda,
Y. Ueda,
K. Shimada,
H. Namatame,
M. Taniguchi,
A. Kimura
Abstract:
Quasiparticle interference induced by cobalt adatoms on the surface of the topological insulator Bi$_{2}$Se$_{3}$ is studied by scanning tunneling microscopy, angle-resolved photoemission spectroscopy and X-ray magnetic circular dichroism. It is found that Co atoms are selectively adsorbed on top of Se sites and act as strong scatterers at the surface, generating anisotropic standing waves. A long…
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Quasiparticle interference induced by cobalt adatoms on the surface of the topological insulator Bi$_{2}$Se$_{3}$ is studied by scanning tunneling microscopy, angle-resolved photoemission spectroscopy and X-ray magnetic circular dichroism. It is found that Co atoms are selectively adsorbed on top of Se sites and act as strong scatterers at the surface, generating anisotropic standing waves. A long-range magnetic order is found to be absent, and the surface state Dirac cone remains gapless. The anisotropy of the standing wave is ascribed to the heavily warped iso-energy contour of unoccupied states, where the scattering is allowed due to a non-zero out-of-plane spin.
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Submitted 15 December, 2011; v1 submitted 14 December, 2011;
originally announced December 2011.
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Surface Scattering via Bulk Continuum States in the 3D Topological Insulator Bi$_{2}$Se$_{3}$
Authors:
Sunghun Kim,
M. Ye,
K. Kuroda,
Y. Yamada,
E. E. Krasovskii,
E. V. Chulkov,
K. Miyamoto,
M. Nakatake,
T. Okuda,
Y. Ueda,
K. Shimada,
H. Namatame,
M. Taniguchi,
A. Kimura
Abstract:
We have performed scanning tunneling microscopy and differential tunneling conductance ($dI/dV$) map** for the surface of the three dimensional topological insulator Bi$_{2}$Se$_{3}$. The fast Fourier transformation applied to the $dI/dV$ image shows an electron interference pattern near Dirac node despite the general belief that the backscattering is well suppressed in the bulk energy gap regio…
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We have performed scanning tunneling microscopy and differential tunneling conductance ($dI/dV$) map** for the surface of the three dimensional topological insulator Bi$_{2}$Se$_{3}$. The fast Fourier transformation applied to the $dI/dV$ image shows an electron interference pattern near Dirac node despite the general belief that the backscattering is well suppressed in the bulk energy gap region. The comparison of the present experimental result with theoretical surface and bulk band structures shows that the electron interference occurs through the scattering between the surface states near the Dirac node and the bulk continuum states.
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Submitted 29 September, 2011; v1 submitted 14 June, 2011;
originally announced June 2011.
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Electronic Structures of Fe$_{3-x}V$_x$Si Probed by Photoemission Spectroscopy
Authors:
Y. T. Cui,
A. Kimura,
K. Miyamoto,
K. Sakamoto,
T. Xie,
S. Qiao,
M. Nakatake,
K. Shimada,
M. Taniguchi,
S. -i. Fujimori,
Y. Saitoh,
K. Kobayashi,
T. Kanomata,
O. Nashima
Abstract:
The electronic structures of the Heusler type compounds Fe$_{3-x}V$_x$Si in the concentration range between x = 0 and x = 1 have been probed by photoemission spectroscopy (PES). The observed shift of Si 2p core- level and the main valence band structres indicate a chemical potential shift to higher energy with increasing x. It is also clarified that the density of state at Fermi edge is owing to…
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The electronic structures of the Heusler type compounds Fe$_{3-x}V$_x$Si in the concentration range between x = 0 and x = 1 have been probed by photoemission spectroscopy (PES). The observed shift of Si 2p core- level and the main valence band structres indicate a chemical potential shift to higher energy with increasing x. It is also clarified that the density of state at Fermi edge is owing to the collaboration of V 3d and Fe 3d derived states. Besides the decrease of the spectral intensity near Fermi edge with increasing x suggests the formation of pseudo gap at large x.
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Submitted 16 April, 2008;
originally announced April 2008.
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Unusual electron-do** effects in Sr$_{2-x}$La$_x$FeMoO$_6$ observed by photoemission spectroscopy
Authors:
T. Saitoh,
M. Nakatake,
H. Nakajima,
O. Morimoto,
A. Kakizaki,
Sh. Xu,
Y. Moritomo,
N. Hamada,
Y. Aiura
Abstract:
We have investigated the electronic structure of electron-doped Sr$_{2-x}$La$_x$FeMoO$_6$ ($x$=0.0 and 0.2) by photoemission spectroscopy and band-structure calculations within the local-density approximation+$U$ (LDA+$U$) scheme. A characteristic double-peak feature near the Fermi level ($E_{\rm F}$) has been observed in the valence-band photoemission spectra of both $x$=0.0 and 0.2 samples.…
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We have investigated the electronic structure of electron-doped Sr$_{2-x}$La$_x$FeMoO$_6$ ($x$=0.0 and 0.2) by photoemission spectroscopy and band-structure calculations within the local-density approximation+$U$ (LDA+$U$) scheme. A characteristic double-peak feature near the Fermi level ($E_{\rm F}$) has been observed in the valence-band photoemission spectra of both $x$=0.0 and 0.2 samples.
A photon-energy dependence of the spectra in the Mo 4$d$ Cooper minimum region compared with the band-structure calculations has shown that the first peak crossing $E_{\rm F}$ consists of the (Fe+Mo) $t_{2g\downarrow}$ states (feature A) and the second peak well below $E_{\rm F}$ is dominated by the Fe $e_{g\uparrow}$ states (feature B).
Upon La substitution, the feature A moves away from $E_{\rm F}$ by $\sim$50 meV which is smaller than the prediction of our band theory, 112 meV. In addition, an intensity enhancement of $both$ A and B has been observed, although B is not crossing $E_{\rm F}$. Those two facts are apparently incompatible with the simple rigid-band shift due to electron do**. We point out that such phenomena can be understood in terms of the strong Hund's rule energy stabilization in the 3$d^5$ configuration at the Fe sites in this compound.
From an observed band-narrowing, we have also deduced a mass enhancement of $\sim$2.5 with respect to the band theory, in good agreement with a specific heat measurement.
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Submitted 4 April, 2005;
originally announced April 2005.
