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Spin injection and detection in a Si-based ferromagnetic tunnel junction: A theoretical model based on the band diagram and experimental demonstration
Authors:
Baisen Yu,
Shoichi Sato,
Masaaki Tanaka,
Ryosho Nakane
Abstract:
We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin polarization in a wide bias range can be well explained using our theoretical model based on the band diagram of the junction and the direct tunneling mechanism. It is sho…
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We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin polarization in a wide bias range can be well explained using our theoretical model based on the band diagram of the junction and the direct tunneling mechanism. It is shown that the spin polarization originates from the band diagrams of the ferromagnetic Fe layer and n+-Si channel in the junction, while the spin selectivity of the MgO tunnel barrier is not necessary. Besides, we clarified the mechanism of the reduction in spin polarization when the bias is high and nonlinear properties are prominent, where the widely-used spin injection/detection model proposed by Valet and Fert is not applicable. The dominant mechanism of such reduction is found to be spin accumulation saturation (SAS) at the n+-Si interface in contact with the MgO layer as the bias is increased in the spin extraction geometry, which is inevitable in semiconductor-based ferromagnetic tunnel junctions. We performed numerical calculations on a two-terminal spin transport device with a n+-Si channel using the junction properties extracted from the experiments, and revealed that the magnetoresistance (MR) ratio is suppressed mainly by SAS in a higher bias range. Furthermore, we proposed methods for improving the MR ratio in two-terminal spin transport devices. Our experiments and theoretical model provide a deep understanding of the spin injection/detection phenomena in semiconductor-based spin transport devices, toward the realization of high performance under reasonably high bias conditions for practical use.
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Submitted 21 March, 2024;
originally announced March 2024.
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Performance enhancement of a spin-wave-based reservoir computing system utilizing different physical conditions
Authors:
Ryosho Nakane,
Akira Hirose,
Gouhei Tanaka
Abstract:
The authors have numerically studied how to enhance reservoir computing performance by thoroughly extracting their spin-wave device potential for higher-dimensional information generation. The reservoir device has a 1-input exciter and 120-output detectors on the top of a continuous magnetic garnet film for spin-wave transmission. For various nonlinear and fading-memory dynamic phenomena distribut…
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The authors have numerically studied how to enhance reservoir computing performance by thoroughly extracting their spin-wave device potential for higher-dimensional information generation. The reservoir device has a 1-input exciter and 120-output detectors on the top of a continuous magnetic garnet film for spin-wave transmission. For various nonlinear and fading-memory dynamic phenomena distributing in the film space, small in-plane magnetic fields were used to prepare stripe domain structures and various dam** constants at the film sides and bottom were explored. The ferromagnetic resonant frequency and relaxation time of spin precession clearly characterized the change in spin dynamics with the magnetic field and dam** constant. The common input signal for reservoir computing was a 1 GHz cosine wave with random 6-valued amplitude modulation. A basic 120-dimensional reservoir output vector was obtained from time-series signals at the 120 output detectors under each of the three magnetic field conditions. Then, 240- and 360-dimensional reservoir output vectors were also constructed by concatenating two and three basic ones, respectively. In nonlinear autoregressive moving average (NARMA) prediction tasks, the computational performance was enhanced as the dimension of the reservoir output vector becomes higher and a significantly low prediction error was achieved for the 10th-order NARMA using the 360-dimensional vector and optimum dam** constant. The results are clear evidence that the collection of diverse output signals efficiently increases the dimensionality effective for reservoir computing, i.e., reservoir-state richness. This paper demonstrates that performance enhancement through various configuration settings is a practical approach for on-chip reservoir computing devices with small numbers of real output nodes.
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Submitted 21 September, 2022;
originally announced September 2022.
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Electron spin transport in a metal-oxide-semiconductor Si two-dimensional inversion channel: Effect of hydrogen annealing on spin scattering mechanism and spin lifetime
Authors:
Shoichi Sato,
Masaaki Tanaka,
Ryosho Nakane
Abstract:
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Submitted 2 August, 2022;
originally announced August 2022.
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Simulation platform for pattern recognition based on reservoir computing with memristor networks
Authors:
Gouhei Tanaka,
Ryosho Nakane
Abstract:
Memristive systems and devices are potentially available for implementing reservoir computing (RC) systems applied to pattern recognition. However, the computational ability of memristive RC systems depends on intertwined factors such as system architectures and physical properties of memristive elements, which complicates identifying the key factor for system performance. Here we develop a simula…
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Memristive systems and devices are potentially available for implementing reservoir computing (RC) systems applied to pattern recognition. However, the computational ability of memristive RC systems depends on intertwined factors such as system architectures and physical properties of memristive elements, which complicates identifying the key factor for system performance. Here we develop a simulation platform for RC with memristor device networks, which enables testing different system designs for performance improvement. Numerical simulations show that the memristor-network-based RC systems can yield high computational performance comparable to that of state-of-the-art methods in three time series classification tasks. We demonstrate that the excellent and robust computation under device-to-device variability can be achieved by appropriately setting network structures, nonlinearity of memristors, and pre/post-processing, which increases the potential for reliable computation with unreliable component devices. Our results contribute to an establishment of a design guide for memristive reservoirs toward a realization of energy-efficient machine learning hardware.
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Submitted 18 June, 2022; v1 submitted 30 November, 2021;
originally announced December 2021.
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Reduced magnetocrystalline anisotropy of CoFe$_2$O$_4$ thin films studied by angle-dependent x-ray magnetic circular dichroism
Authors:
Yosuke Nonaka,
Yuki K. Wakabayashi,
Goro Shibata,
Shoya Sakamoto,
Keisuke Ikeda,
Zhendong Chi,
Yuxuan Wan,
Masahiro Suzuki,
Tsuneharu Koide,
Masaaki Tanaka,
Ryosho Nakane,
Atsushi Fujimori
Abstract:
Spinel-type CoFe$_2$O$_4$ is a ferrimagnetic insulator with the Néel temperature exceeding 790 K, and shows a strong cubic magnetocrystalline anisotropy (MCA) in bulk materials. However, when a CoFe$_2$O$_4$ film is grown on other materials, its magnetic properties are degraded so that so-called magnetically dead layers are expected to be formed in the interfacial region. We investigate how the ma…
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Spinel-type CoFe$_2$O$_4$ is a ferrimagnetic insulator with the Néel temperature exceeding 790 K, and shows a strong cubic magnetocrystalline anisotropy (MCA) in bulk materials. However, when a CoFe$_2$O$_4$ film is grown on other materials, its magnetic properties are degraded so that so-called magnetically dead layers are expected to be formed in the interfacial region. We investigate how the magnetic anisotropy of CoFe$_2$O$_4$ is modified at the interface of CoFe$_2$O$_4$/Al$_2$O$_3$ bilayers grown on Si(111) using x-ray magnetic circular dichroism (XMCD). We find that the thinner CoFe$_2$O$_4$ films have significantly smaller MCA values than bulk materials. The reduction of MCA is explained by the reduced number of Co$^{2+}$ ions at the $O_h$ site reported by a previous study [Y. K. Wakabayashi $\textit{et al.}$, Phys. Rev. B $\textbf{96}$, 104410 (2017)].
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Submitted 23 July, 2021;
originally announced July 2021.
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A numerical exploration of signal detector arrangement in a spin-wave reservoir computing device
Authors:
Takehiro Ichimura,
Ryosho Nakane,
Gouhei Tanaka,
Akira Hirose
Abstract:
This paper studies numerically how the signal detector arrangement influences the performance of reservoir computing using spin waves excited in a ferrimagnetic garnet film. This investigation is essentially important since the input information is not only conveyed but also transformed by the spin waves into high-dimensional information space when the waves propagate in the film in a spatially di…
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This paper studies numerically how the signal detector arrangement influences the performance of reservoir computing using spin waves excited in a ferrimagnetic garnet film. This investigation is essentially important since the input information is not only conveyed but also transformed by the spin waves into high-dimensional information space when the waves propagate in the film in a spatially distributed manner. This spatiotemporal dynamics realizes a rich reservoir-computational functionality. First, we simulate spin waves in a rectangular garnet film with two input electrodes to obtain spatial distributions of the reservoir states in response to input signals, which are represented as spin vectors and used for a machine-learning waveform classification task. The detected reservoir states are combined through readout connection weights to generate a final output. We visualize the spatial distribution of the weights after training to discuss the number and positions of the output electrodes by arranging them at grid points, equiangularly circular points or at random. We evaluate the classification accuracy by changing the number of the output electrodes, and find that a high accuracy ($>$ 90\%) is achieved with only several tens of output electrodes regardless of grid, circular or random arrangement. These results suggest that the spin waves possess sufficiently complex and rich dynamics for this type of tasks. Then we investigate in which area useful information is distributed more by arranging the electrodes locally on the chip. Finally, we show that this device has generalization ability for input wave-signal frequency in a certain frequency range. These results will lead to practical design of spin-wave reservoir devices for low-power intelligent computing in the near future.
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Submitted 30 April, 2021;
originally announced April 2021.
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Spin waves propagating through a stripe magnetic domain structure and their applications to reservoir computing
Authors:
Ryosho Nakane,
Akira Hirose,
Gouhei Tanaka
Abstract:
Spin waves propagating through a stripe domain structure and reservoir computing with their spin dynamics have been numerically studied with focusing on the relation between physical phenomena and computing capabilities. Our system utilizes a spin-wave-based device that has a continuous magnetic garnet film and 1-input/72-output electrodes on the top. To control spatially-distributed spin dynamics…
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Spin waves propagating through a stripe domain structure and reservoir computing with their spin dynamics have been numerically studied with focusing on the relation between physical phenomena and computing capabilities. Our system utilizes a spin-wave-based device that has a continuous magnetic garnet film and 1-input/72-output electrodes on the top. To control spatially-distributed spin dynamics, a stripe magnetic domain structure and amplitude-modulated triangular input waves were used. The spatially-arranged electrodes detected spin vector outputs with various nonlinear characteristics that were leveraged for reservoir computing. By moderately suppressing nonlinear phenomena, our system achieves 100$\%$ prediction accuracy in temporal exclusive-OR (XOR) problems with a delay step up to 5. At the same time, it shows perfect inference in delay tasks with a delay step more than 7 and its memory capacity has a maximum value of 21. This study demonstrated that our spin-wave-based reservoir computing has a high potential for edge-computing applications and also can offer a rich opportunity for further understanding of the underlying nonlinear physics.
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Submitted 14 April, 2021;
originally announced April 2021.
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Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions
Authors:
Shoichi Sato,
Masaaki Tanaka,
Ryosho Nakane
Abstract:
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The magnetoresistance ratio of the spin MOSFET with a channel length of 0.4$μ$m was increased by a factor of 6 from that in our previous pa…
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We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The magnetoresistance ratio of the spin MOSFET with a channel length of 0.4$μ$m was increased by a factor of 6 from that in our previous paper [Phys. Rev. B 99, 165301 (2019)] by lowering the parasitic resistances at the source/drain junctions with highly-phosphorus-doped n+-Si regions and by increasing the lateral electric field in the channel along the electron transport, called "spin drift". Clear Hanle signals with some oscillation peaks were observed for the spin MOSFET with a channel length of 10 $μ$ m under the lateral electric field, indicating that the effective spin diffusion length is dramatically enhanced by the spin drift. By taking into account the n+-Si regions and the spin drift in the channel, one-dimensional analytic functions were derived for analyzing the effect of the spin drift on the spin transport through the channel and these functions were found to explain almost all the experimental results. From the calculated spin current and spin distribution, it was revealed that almost all the spins are unflipped during the spin-drift-assisted transport through the 0.4-$μ$m-long inversion channel, but the most part of the injected spins from the source electrode are relaxed in the n+-Si regions of both the source and drain junctions. This means that the spin drift is useful and precise design of the device structure is essential to obtain a higher magnetoresistance ratio. Furthermore, we showed that the effective spin resistances that are introduced in this study are very helpful to understand how to improve the magnetoresistance ratio of spin MOSFETs for practical use.
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Submitted 4 March, 2020;
originally announced March 2020.
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Characterization of in-gap states in epitaxial CoFe2O4(111) layers grown on Al2O3(111)/Si(111) by resonant inelastic x-ray scattering
Authors:
Yuki K. Wakabayashi,
Takashi Tokushima,
Kentaro Kuga,
Hiroshi Yomosa,
Masaki Oura,
Hidenori Fujiwara,
Tetsuya Ishikawa,
Masaaki Tanaka,
Takayuki Kiss,
Ryosho Nakane
Abstract:
We have studied in-gap states in epitaxial CoFe2O4(111), which potentially acts as a perfect spin filter, grown on a Al2O3(111)/Si(111) structure by using ellipsometry, Fe L2,3-edge x-ray absorption spectroscopy (XAS), and Fe L2,3-edge resonant inelastic x-ray scattering (RIXS), and revealed the relation between the in-gap states and chemical defects due to the Fe2+ cations at the octahedral sites…
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We have studied in-gap states in epitaxial CoFe2O4(111), which potentially acts as a perfect spin filter, grown on a Al2O3(111)/Si(111) structure by using ellipsometry, Fe L2,3-edge x-ray absorption spectroscopy (XAS), and Fe L2,3-edge resonant inelastic x-ray scattering (RIXS), and revealed the relation between the in-gap states and chemical defects due to the Fe2+ cations at the octahedral sites (Fe2+ (Oh) cations). The ellipsometry measurements showed the indirect band gap of 1.24 eV for the CoFe2O4 layer and the Fe L2,3-edge XAS confirmed the characteristic photon energy for the preferential excitation of the Fe2+ (Oh) cations. In the Fe L3-edge RIXS spectra, a band-gap excitation and an excitation whose energy is smaller than the band-gap energy (Eg = 1.24 eV) of CoF2O4, which we refer to as "below-band-gap excitation (BBGE)" hereafter, were observed. The intensity of the BBGE was strengthened at the preferential excitation energy of the Fe2+ (Oh) cations. In addition, the intensity of the BBGE was significantly increased when the thickness of the CoFe2O4 layer was decreased from 11 to 1.4 nm, which coincides with the increase in the site occupancy of the Fe2+ (Oh) cations with decreasing the thickness. These results indicate that the BBGE comes from the in-gap states of the Fe2+ (Oh) cations whose density increases near the heterointerface on the bottom Al2O3 layer. We have demonstrated that RIXS measurements and analyses in combination with ellipsometry and XAS are effective to provide an insight into in-gap states in thin-film oxide heterostructures.
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Submitted 13 October, 2019;
originally announced October 2019.
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Recent Advances in Physical Reservoir Computing: A Review
Authors:
Gouhei Tanaka,
Toshiyuki Yamane,
Jean Benoit Héroux,
Ryosho Nakane,
Naoki Kanazawa,
Seiji Takeda,
Hidetoshi Numata,
Daiju Nakano,
Akira Hirose
Abstract:
Reservoir computing is a computational framework suited for temporal/sequential data processing. It is derived from several recurrent neural network models, including echo state networks and liquid state machines. A reservoir computing system consists of a reservoir for map** inputs into a high-dimensional space and a readout for pattern analysis from the high-dimensional states in the reservoir…
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Reservoir computing is a computational framework suited for temporal/sequential data processing. It is derived from several recurrent neural network models, including echo state networks and liquid state machines. A reservoir computing system consists of a reservoir for map** inputs into a high-dimensional space and a readout for pattern analysis from the high-dimensional states in the reservoir. The reservoir is fixed and only the readout is trained with a simple method such as linear regression and classification. Thus, the major advantage of reservoir computing compared to other recurrent neural networks is fast learning, resulting in low training cost. Another advantage is that the reservoir without adaptive updating is amenable to hardware implementation using a variety of physical systems, substrates, and devices. In fact, such physical reservoir computing has attracted increasing attention in diverse fields of research. The purpose of this review is to provide an overview of recent advances in physical reservoir computing by classifying them according to the type of the reservoir. We discuss the current issues and perspectives related to physical reservoir computing, in order to further expand its practical applications and develop next-generation machine learning systems.
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Submitted 15 April, 2019; v1 submitted 15 August, 2018;
originally announced August 2018.
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Systematic study of the electronic structure and the magnetic properties of a few-nm-thick epitaxial (Ni1-xCox)Fe2O4 (x = 0 - 1) layers grown on Al2O3(111)/Si(111) using soft X-ray magnetic circular dichroism: effects of cation distribution
Authors:
Yuki K. Wakabayashi,
Yosuke Nonaka,
Yukiharu Takeda,
Shoya Sakamoto,
Keisuke Ikeda,
Zhendong Chi,
Goro Shibata,
Arata Tanaka,
Yuji Saitoh,
Hiroshi Yamagami,
Masaaki Tanaka,
Atsushi Fujimori,
Ryosho Nakane
Abstract:
We study the electronic structure and the magnetic properties of epitaxial (Ni1-xCox)Fe2O4(111) layers (x = 0 - 1) with thicknesses d = 1.7 - 5.2 nm grown on Al2O3(111)/Si(111) structures, to achieve a high value of inversion parameter y, which is the inverse-to-normal spinel-structure ratio, and hence to obtain good magnetic properties even when the thickness is thin enough for electron tunneling…
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We study the electronic structure and the magnetic properties of epitaxial (Ni1-xCox)Fe2O4(111) layers (x = 0 - 1) with thicknesses d = 1.7 - 5.2 nm grown on Al2O3(111)/Si(111) structures, to achieve a high value of inversion parameter y, which is the inverse-to-normal spinel-structure ratio, and hence to obtain good magnetic properties even when the thickness is thin enough for electron tunneling as a spin filter. We revealed the crystallographic (octahedral Oh or tetrahedral Td) sites and the valences of the Fe, Co, and Ni cations using experimental soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism spectra and configuration-interaction cluster-model calculation. In all the (Ni1-xCox)Fe2O4 layers with d = about 4 nm, all Ni cations occupy the Ni2+ (Oh) site, whereas Co cations occupy the three different Co2+ (Oh), Co2+ (Td), and Co3+ (Oh) sites with constant occupancies. According to these features, the occupancy of the Fe3+ (Oh) cations decreases and that of the Fe3+ (Td) cations increases with decreasing x. Consequently, we obtained a systematic increase of y with decreasing x and achieved the highest y value of 0.91 for the NiFe2O4 layer with d = 3.5 nm. From the d dependences of y and magnetization in the d range of 1.7 - 5.2 nm, a magnetically dead layer is present near the NiFe2O4/Al2O3 interface, but its influence on the magnetization was significantly suppressed compared with the case of CoFe2O4 layers reported previously [Y. K. Wakabayasi et al., Phys. Rev. B 96, 104410 (2017)], due to the high site selectivity of the Ni cations. Since our epitaxial NiFe2O4 layer with d = 3.5 nm has a high y values (0.91) and a reasonably large magnetization (180 emu/cc), it is expected to exhibit a strong spin filter effect, which can be used for efficient spin injection into Si.
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Submitted 8 August, 2018;
originally announced August 2018.
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Impurity band conduction in group-IV ferromagnetic semiconductor Ge1-xFex with nanoscale fluctuations in Fe concentration
Authors:
Yoshisuke Ban,
Yuki K. Wakabayashi,
Ryosho Nakane,
Masaaki Tanaka
Abstract:
We study the carrier transport and magnetic properties of group-IV-based ferromagnetic semiconductor Ge1-xFex thin films (Fe concentration x = 2.3 - 14 %) with and without boron (B) do**, by measuring their transport characteristics; the temperature dependence of resistivity, hole concentration, mobility, and the relation between the anomalous Hall conductivity versus conductivity. At relatively…
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We study the carrier transport and magnetic properties of group-IV-based ferromagnetic semiconductor Ge1-xFex thin films (Fe concentration x = 2.3 - 14 %) with and without boron (B) do**, by measuring their transport characteristics; the temperature dependence of resistivity, hole concentration, mobility, and the relation between the anomalous Hall conductivity versus conductivity. At relatively low x (= 2.3 %), the transport in the undoped Ge1-xFex film is dominated by hole hop** between Fe-rich hop** sites in the Fe impurity band, whereas that in the B-doped Ge1-xFex film is dominated by the holes in the valence band in the degenerated Fe-poor regions. As x increases (x = 2.3 - 14 %), the transport in the both undoped and B-doped Ge1-xFex films is dominated by hole hop** between the Fe-rich hop** sites of the impurity band. The magnetic properties of the Ge1-xFex films are studied by various methods including magnetic circular dichroism, magnetization and anomalous Hall resistance, and are not influenced by B-do**. We show band profile models of both undoped and B-doped Ge1-xFex films, which can explain the transport and the magnetic properties of the Ge1-xFex films.
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Submitted 16 January, 2018; v1 submitted 14 June, 2017;
originally announced June 2017.
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Spin injection into Si in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer
Authors:
Shoichi Sato,
Ryosho Nakane,
Takato Hada,
Masaaki Tanaka
Abstract:
We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we observed the narrower three-terminal Hanle (N-3TH) signals indicating true spin injection into Si, and estimated the spin polarization in Si to be 16% when the thick…
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We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we observed the narrower three-terminal Hanle (N-3TH) signals indicating true spin injection into Si, and estimated the spin polarization in Si to be 16% when the thickness of the Mg insertion layer is 1 nm, whereas no N-3TH signal was observed without Mg insertion. This means that the spin injection/extraction efficiency is enhanced by suppressing the formation of a magnetically-dead layer at the Fe/MgO interface. We have also observed clear spin transport signals, such as non-local Hanle signals and spin-valve signals, in a lateral four-terminal device with the same Fe/Mg/MgO/n+-Si tunnel junctions fabricated on a Si-on-insulator substrate. It was found that both the intensity and linewidth of the spin signals are affected by the geometrical effects (device geometry and size). We have derived analytical functions taking into account the device structures, including channel thickness and electrode size, and estimated important parameters; spin lifetime and spin polarizations. Our analytical functions well explain the experimental results. Our study shows the importance of suppressing a magnetically-dead layer, and provides a unified understanding of spin injection/detection signals in different device geometries.
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Submitted 20 April, 2017;
originally announced April 2017.
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Electronic structure and magnetic properties of magnetically dead layers in epitaxial CoFe2O4/Al2O3/Si(111) films studied by X-ray magnetic circular dichroism
Authors:
Yuki K. Wakabayashi,
Yosuke Nonaka,
Yukiharu Takeda,
Shoya Sakamoto,
Keisuke Ikeda,
Zhendong Chi,
Goro Shibata,
Arata Tanaka,
Yuji Saitoh,
Hiroshi Yamagami,
Masaaki Tanaka,
Atsushi Fujimori,
Ryosho Nakane
Abstract:
Epitaxial CoFe2O4/Al2O3 bilayers are expected to be highly efficient spin injectors into Si owing to the spin filter effect of CoFe2O4. To exploit the full potential of this system, understanding the microscopic origin of magnetically dead layers at the CoFe2O4/Al2O3 interface is necessary. In this paper, we study the crystallographic and electronic structures and the magnetic properties of CoFe2O…
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Epitaxial CoFe2O4/Al2O3 bilayers are expected to be highly efficient spin injectors into Si owing to the spin filter effect of CoFe2O4. To exploit the full potential of this system, understanding the microscopic origin of magnetically dead layers at the CoFe2O4/Al2O3 interface is necessary. In this paper, we study the crystallographic and electronic structures and the magnetic properties of CoFe2O4(111) layers with various thicknesses (thickness d = 1.4, 2.3, 4, and 11 nm) in the epitaxial CoFe2O4(111)/Al2O3(111)/Si(111) structures using soft X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) combined with cluster-model calculation. The magnetization of CoFe2O4 measured by XMCD gradually decreases with decreasing thickness d and finally a magnetically dead layer is clearly detected at d = 1.4 nm. The magnetically dead layer has frustration of magnetic interactions which is revealed from comparison between the magnetizations at 300 and 6 K. From analysis using configuration-interaction cluster-model calculation, the decrease of d leads to a decrease in the inverse-to-normal spinel structure ratio and also a decrease in the average valence of Fe at the octahedral sites. These results strongly indicate that the magnetically dead layer at the CoFe2O4/Al2O3 interface originates from various complex networks of superexchange interactions through the change in the crystallographic and electronic structures. Furthermore, from comparison of the magnetic properties between d = 1.4 and 2.3 nm, it is found that ferrimagnetic order of the magnetically dead layer at d = 1.4 nm is restored by the additional growth of the 0.9-nm-thick CoFe2O4 layer on it.
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Submitted 6 April, 2017;
originally announced April 2017.
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Carrier transport properties of the Group-IV ferromagnetic semiconductor Ge1-xFex with and without boron do**
Authors:
Yoshisuke Ban,
Yuki Wakabayashi,
Ryota Akiyama,
Ryosho Nakane,
Masaaki Tanaka
Abstract:
We have investigated the transport and magnetic properties of group-IV ferromagnetic semiconductor Ge1-xFex films (x = 1.0 and 2.3 %) with and without boron do** grown by molecular beam epitaxy (MBE). In order to accurately measure the transport properties of 100-nm-thick Ge1-xFex films, (001)-oriented silicon-on-insulator (SOI) wafers with an ultra-thin Si body layer (~5 nm) were used as substr…
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We have investigated the transport and magnetic properties of group-IV ferromagnetic semiconductor Ge1-xFex films (x = 1.0 and 2.3 %) with and without boron do** grown by molecular beam epitaxy (MBE). In order to accurately measure the transport properties of 100-nm-thick Ge1-xFex films, (001)-oriented silicon-on-insulator (SOI) wafers with an ultra-thin Si body layer (~5 nm) were used as substrates. Owing to the low Fe content, the hole concentration and mobility in the Ge1-xFex films were exactly estimated by Hall measurements because the anomalous Hall effect in these films was found to be negligibly small. By boron do**, we increased the hole concentration in Ge1-xFex from ~1018 cm-3 to ~1020 cm-3 (x = 1.0%) and to ~1019 cm-3 (x = 2.3%), but no correlation was observed between the hole concentration and magnetic properties. This result presents a contrast to the hole-induced ferromagnetism in III-V ferromagnetic semiconductors.
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Submitted 12 May, 2014;
originally announced May 2014.
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Influence of anisotropic magnetoresistance on nonlocal signals in Si-based multi-terminal devices with Fe electrodes
Authors:
Ryosho Nakane,
Shoichi Sato,
Shun Kokutani,
Masaaki Tanaka
Abstract:
We have investigated the influence of anisotropic magnetoresistance (AMR) on nonlocal signals in Si-based multi-terminal devices with ferromagnetic Fe electrodes. The AMR of the Fe electrodes was found to have a significant influence on nonlocal signals when the in-plane device structure is not optimized. Moreover, realization of a pure spin current by spin diffusion was found to be virtually impo…
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We have investigated the influence of anisotropic magnetoresistance (AMR) on nonlocal signals in Si-based multi-terminal devices with ferromagnetic Fe electrodes. The AMR of the Fe electrodes was found to have a significant influence on nonlocal signals when the in-plane device structure is not optimized. Moreover, realization of a pure spin current by spin diffusion was found to be virtually impossible because of the electric potential distribution in the depth direction in the Si channel. Although apparent signals indicating the spin-valve effect were not detected, we mainly present structural influence on the electric potential distribution which is indispensable for the analyses of spin-dependent transport.
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Submitted 2 October, 2011;
originally announced October 2011.
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Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing
Authors:
Yota Takamura,
Takuya Sakurai,
Ryosho Nakane,
Yusuke Shuto,
Satoshi Sugahara
Abstract:
The authors demonstrated that a full-Heusler Co2FeGe (CFG) alloy thin film was epitaxially grown by rapid-thermal-annealing-induced germanidation of an Fe/Co/pseudo-Ge(001)-on-insulator (GOI) multilayer formed on a Si-on-insulator (SOI) substrate. X-ray diffraction (XRD) measurements with the out-of-plane and in-plane configurations revealed that the CFG film was epitaxially grown along the [001]…
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The authors demonstrated that a full-Heusler Co2FeGe (CFG) alloy thin film was epitaxially grown by rapid-thermal-annealing-induced germanidation of an Fe/Co/pseudo-Ge(001)-on-insulator (GOI) multilayer formed on a Si-on-insulator (SOI) substrate. X-ray diffraction (XRD) measurements with the out-of-plane and in-plane configurations revealed that the CFG film was epitaxially grown along the [001] direction with the in-plane epitaxial relation of CFG[100]||GOI[100], although the film slightly contained a texture component. The strong (111) and (200) superlattice diffraction intensities indicated that the CFG film had a high degree of order for the L21 structure. Cross-sectional high-resolution transmission electron microscopy images of the film implied that the film had the dominant epitaxial and slight texture components, which was consistent with the XRD measurements. The epitaxial component was grown directly on the BOX layer of the SOI substrate without the formation of any interfacial layer.
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Submitted 8 December, 2010;
originally announced December 2010.
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Quantitative analysis of atomic disorders in full-Heusler Co2FeSi alloy thin films using x-ray diffraction with Co-Ka and Cu-Ka sources
Authors:
Yota Takamura,
Ryosho Nakane,
Satoshi Sugahara
Abstract:
The authors developed a new analysis technique for atomic disorder structures in full-Heusler alloys using x-ray diffraction (XRD) with Co-Ka and Cu-Ka sources. The developed technique can quantitatively evaluate all the atomic disorders for the exchanges between X, Y, and Z atoms in full-Heusler X2YZ alloys. In particular, the technique can treat the DO3 disorder that cannot be analyzed by ordi…
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The authors developed a new analysis technique for atomic disorder structures in full-Heusler alloys using x-ray diffraction (XRD) with Co-Ka and Cu-Ka sources. The developed technique can quantitatively evaluate all the atomic disorders for the exchanges between X, Y, and Z atoms in full-Heusler X2YZ alloys. In particular, the technique can treat the DO3 disorder that cannot be analyzed by ordinary Cu-Ka XRD. By applying this technique to full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing (RTA), RTA-temperature (TA) dependence of the atomic disorders was revealed. The site occupancies of Co, Fe, and Si atoms on their original sites were 98 %, 90 %, and 93 %, respectively, for the film formed at TA = 800 degree C, indicating that the RTA-formed Co2FeSi film had the L21 structure with the extremely high degree of ordering.
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Submitted 8 February, 2010;
originally announced February 2010.
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Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts
Authors:
Ryosho. Nakane,
Tomoyuki Harada,
Kuniaki Sugiura,
Satoshi Sugahara,
Masaaki Tanaka
Abstract:
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by photolithography using an epitaxial MnAs film grown on a silicon-on-insulator (SOI) substrate. In-plane magnetoresistance showed spin-valve-type hysteretic behavior, when…
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Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by photolithography using an epitaxial MnAs film grown on a silicon-on-insulator (SOI) substrate. In-plane magnetoresistance showed spin-valve-type hysteretic behavior, when the measurements were performed with constant source-drain and source-gate biases. By comparing with the magnetization-related resistance change resulting from the MnAs contacts, we conclude that the spin-polarized electrons are injected from the MnAs source into the Si MOS inversion channel, and detected by the MnAs drain.
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Submitted 30 January, 2010;
originally announced February 2010.
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A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET
Authors:
Yusuke Shuto,
Ryosho Nakane,
Wenhong Wang,
Hiroaki Sukegawa,
Shuu'ichirou Yamamoto,
Masaaki Tanaka,
Koichiro Inomata,
Satoshi Sugahara
Abstract:
We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and…
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We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductance controlled by the magnetization configurations of the MTJ at room temperature. This is the first observation of spin-transistor operations for spin-functional MOSFETs.
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Submitted 4 December, 2009;
originally announced December 2009.
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Fabrication and characterization of pseudo-spin-MOSFET
Authors:
Y. Shuto,
R. Nakane,
H. Sukegawa,
S. Yamamoto,
M. Tanaka,
K. Inomata,
S. Sugahara
Abstract:
Recently spin-transistors receive considerable attention as a highly-functional building block of future integrated circuits. In order to realize spin-transistors, it is essential that technology of efficient spin injection/detection for semiconductor channel is established. However, this is not so easy challenge owing to ferromagnet/semiconductor-interface-related several problems. In this pape…
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Recently spin-transistors receive considerable attention as a highly-functional building block of future integrated circuits. In order to realize spin-transistors, it is essential that technology of efficient spin injection/detection for semiconductor channel is established. However, this is not so easy challenge owing to ferromagnet/semiconductor-interface-related several problems. In this paper, we demonstrate pseudo-spin-MOSFET (PS-MOSFET) architecture that is a new circuit approach using an ordinary MOSFET and magnetic tunnel junction (MTJ) to reproduce the functions of spin transistors.
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Submitted 28 October, 2009;
originally announced October 2009.
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Analysis of L21-ordering in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing
Authors:
Yota Takamura,
Ryosho Nakane,
Satoshi Sugahara
Abstract:
The authors developed a new analysis approach for evaluation of atomic ordering in full-Heusler alloys, which is extension of the commonly used Webster model. Our model can give accurate physical formalism for the degree of atomic ordering in the L21 structure, including correction with respect to the fully disordered A2 structure, i.e., the model can directly evaluate the degree of L21-ordering…
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The authors developed a new analysis approach for evaluation of atomic ordering in full-Heusler alloys, which is extension of the commonly used Webster model. Our model can give accurate physical formalism for the degree of atomic ordering in the L21 structure, including correction with respect to the fully disordered A2 structure, i.e., the model can directly evaluate the degree of L21-ordering under a lower ordering structure than the complete B2-ordering structure. The proposed model was applied to full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing. The film formed at TA = 800 C showed a relatively high degree of L21-ordering of 83 % under a high degree of B2-ordering of 97 %.
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Submitted 9 February, 2009;
originally announced February 2009.
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Characterization of half-metallic L2_1-phase Co_2FeSi full-Heusler alloy films formed by rapid thermal annealing
Authors:
Yota Takamura,
Ryosho Nakane,
Hiro Munekata,
Satoshi Sugahara
Abstract:
The authors developed a preparation technique of Co_2FeSi full-Heusler alloy films with the L2_1-ordered structure on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The Co_2FeSi full-Heusler alloy films were successfully formed by RTA-induced silicidation reaction between an ultrathin SOI (001) layer and Fe/Co layers deposited on it. The highly (110)-oriented L2_…
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The authors developed a preparation technique of Co_2FeSi full-Heusler alloy films with the L2_1-ordered structure on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The Co_2FeSi full-Heusler alloy films were successfully formed by RTA-induced silicidation reaction between an ultrathin SOI (001) layer and Fe/Co layers deposited on it. The highly (110)-oriented L2_1-phase polycrystalline full-Heusler alloy films were obtained at the RTA temperature of 700 C. Crystallographic and magnetic properties of the RTA-formed full-Heusler alloy films were qualitatively the same as those of bulk full-Heusler alloy. This technique is compatible with metal source/drain formation process in advanced CMOS technology and would be applicable to the fabrication of the half-metallic source/drain of MOSFET type of spin transistors.
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Submitted 15 November, 2007;
originally announced November 2007.
