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Detailed analytic study of the compact pairwise model for SIS epidemic propagation on networks
Authors:
Noémi Nagy,
Péter L. Simon
Abstract:
The global behaviour of the compact pairwise approximation of SIS epidemic propagation on networks is studied. It is shown that the system can be reduced to two equations enabling us to carry out a detailed study of the dynamic properties of the solutions. It is proved that transcritical bifurcation occurs in the system at $τ= τ_c = \frac{γn}{\langle n^{2}\rangle-n}$, where $τ$ and $γ$ are infecti…
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The global behaviour of the compact pairwise approximation of SIS epidemic propagation on networks is studied. It is shown that the system can be reduced to two equations enabling us to carry out a detailed study of the dynamic properties of the solutions. It is proved that transcritical bifurcation occurs in the system at $τ= τ_c = \frac{γn}{\langle n^{2}\rangle-n}$, where $τ$ and $γ$ are infection and recovery rates, respectively, $n$ is the average degree of the network and $\langle n^{2}\rangle$ is the second moment of the degree distribution. For subcritical values of $τ$ the disease-free steady state is stable, while for supercritical values a unique stable endemic equilibrium appears. We also prove that for subcritical values of $τ$ the disease-free steady state is globally stable under certain assumptions on the graph that cover a wide class of networks.
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Submitted 9 July, 2018;
originally announced July 2018.
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Controlling the nanoscale rippling of graphene with SiO2 nanoparticles
Authors:
Zoltán Osváth,
Eszter Gergely-Fülöp,
Norbert Nagy,
András Deák,
Péter Nemes-Incze,
Xiaozhan **,
Chanyong Hwang,
László Péter Biró
Abstract:
The electronic properties of graphene can be significantly influenced by mechanical strain. One practical approach to induce strain in graphene is to transfer this atomically thin membrane onto pre-patterned substrates with specific corrugation. The possibility to use nanoparticles to impart extrinsic rippling to graphene has not been fully explored yet. Here we study the structure and elastic pro…
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The electronic properties of graphene can be significantly influenced by mechanical strain. One practical approach to induce strain in graphene is to transfer this atomically thin membrane onto pre-patterned substrates with specific corrugation. The possibility to use nanoparticles to impart extrinsic rippling to graphene has not been fully explored yet. Here we study the structure and elastic properties of graphene grown by chemical vapour deposition and transferred onto a continuous layer of SiO2 nanoparticles with diameters of around 25 nm, prepared on Si substrate by Langmuir-Blodgett technique. We show that the corrugation of the transferred graphene and thus the membrane strain can be modified by annealing at moderate temperatures. The membrane parts bridging the nanoparticles are suspended and can be reversibly lifted by the attractive forces between an atomic force microscope tip and graphene. This allows the dynamic control of the local morphology of graphene nanomembranes.
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Submitted 15 May, 2014;
originally announced May 2014.
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Arbitrary tip orientation in STM simulations: 3D WKB theory and application to W(110)
Authors:
Gábor Mándi,
Norbert Nagy,
Krisztián Palotás
Abstract:
We extend the orbital-dependent electron tunneling model implemented within the three-dimensional (3D) Wentzel-Kramers-Brillouin (WKB) atom-superposition approach for simulating scanning tunneling microscopy (STM) by including arbitrary tip orientations. The orientation of the tip is characterized by a local coordinate system centered on the tip apex atom obtained by a rotation with respect to the…
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We extend the orbital-dependent electron tunneling model implemented within the three-dimensional (3D) Wentzel-Kramers-Brillouin (WKB) atom-superposition approach for simulating scanning tunneling microscopy (STM) by including arbitrary tip orientations. The orientation of the tip is characterized by a local coordinate system centered on the tip apex atom obtained by a rotation with respect to the sample coordinate system. The rotation is described by the Euler angles. Applying our method, we highlight the role of the real-space shape of the electron orbitals involved in the tunneling, and analyze the convergence and the orbital contributions of the tunneling current above the W(110) surface depending on the orientation of a model tungsten tip. We also simulate STM images at constant-current condition, and find that their quality depends very much on the tip orientation. Some orientations result in protrusions on the images that do not occur above W atoms. The presence of such apparent atom positions makes it difficult to identify the exact position of surface atoms. It is suggested that this tip orientation effect should be considered at the evaluation of experimental STM images on other surfaces as well. The presented computationally efficient tunneling model could prove to be useful for obtaining more information on the local tip geometry and orientation by comparing STM experiments to a large number of simulations with systematically varied tip orientations.
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Submitted 16 July, 2013;
originally announced July 2013.
