Showing 1–4 of 4 results for author: Nagahama, T

Enhancement of spin Hall magnetoresistance effect in CoFe2O4/Pt/CoFe2O4 trilayers

Authors: Takumi Yamamoto, Takashi Yanase, Toshihiro Shimada, Taro Nagahama

Abstract: The spin Hall magnetoresistance (SMR) phenomenon includes the fundamental physics of spin current, and originates from spin accumulation at an interface owing to the spin Hall effect. Although bilayers are the simplest structure exhibiting SMR, these exploit spin accumulation at only one side of a layer. Herein, trilayers of CoFe2O4/Pt/CoFe2O4 were fabricated and their spin Hall magnetoresistance… ▽ More The spin Hall magnetoresistance (SMR) phenomenon includes the fundamental physics of spin current, and originates from spin accumulation at an interface owing to the spin Hall effect. Although bilayers are the simplest structure exhibiting SMR, these exploit spin accumulation at only one side of a layer. Herein, trilayers of CoFe2O4/Pt/CoFe2O4 were fabricated and their spin Hall magnetoresistance was investigated. The trilayer structure featuring a thin Pt layer exhibited an SMR ratio four times that of a CoFe2O4/Pt bilayer. Further, the SMR ratio exhibited a dependence on Pt layer thickness that can be attributed to interference of the spin accumulations at both sides. Herein, several parameters such as spin diffusion length and mixing conductance were derived using the theory of Chen et al. △ Less

Submitted 27 May, 2019; v1 submitted 25 December, 2018; originally announced December 2018.

Comments: After we received the referee's comment, we conducted additional experiments based on reviewer's advice. As the result, we have found the problem of the reproducibility in our experiments. In fact, we observed larger SMR at new experiments, however, the mechanism has not been clear. Therefore, we decided to withdraw the paper once, and reconsider the results

Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature

Authors: Taro Nagahama, Yuya Matsuda, Kazuya Tate, Shungo Hiratani, Yusuke Watanabe, Takashi Yanase, Toshihiro Shimada

Abstract: Fe$_3$O$_4$ is a ferrimagnetic spinel ferrite that exhibits electric conductivity at room temperature (RT). Although the material has been predicted to be a half metal according to ab-initio calculations, magnetic tunnel junctions (MTJs) with Fe$_3$O$_4$ electrodes have demonstrated a small tunnel magnetoresistance effect. Not even the sign of the TMR ratio has been experimentally established. Her… ▽ More Fe$_3$O$_4$ is a ferrimagnetic spinel ferrite that exhibits electric conductivity at room temperature (RT). Although the material has been predicted to be a half metal according to ab-initio calculations, magnetic tunnel junctions (MTJs) with Fe$_3$O$_4$ electrodes have demonstrated a small tunnel magnetoresistance effect. Not even the sign of the TMR ratio has been experimentally established. Here, we report on the magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations. The films exhibited apparent crystal orientation dependence on hysteresis curves. In particular, Fe$_3$O$_4$(110) films exhibited in-plane uniaxial magnetic anisotropy. With respect to the squareness of hysteresis, Fe$_3$O$_4$ (111) demonstrated the largest squareness. Furthermore, we fabricated MTJs with Fe$_3$O$_4$(110) electrodes, and obtained an TMR effect of -12\% at RT. The negative TMR ratio corresponded to the negative spin polarization of Fe$_3$O$_4$ predicted from band calculations. △ Less

Submitted 5 June, 2014; originally announced June 2014.

Spin-transfer switching and thermal stability in an FePt/Au/FePt nanopillar prepared by alternate monatomic layer deposition

Authors: Kay Yakushiji, Shinji Yuasa, Taro Nagahama, Akio Fukushima, Hitoshi Kubota, Toshikazu Katayama, Koji Ando

Abstract: We fabricated a current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) nanopillar with a 1-nm-thick FePt free layer having perpendicular anisotropy using the alternate monatomic layer deposition method. Nanopillars consisting of [Fe (1 monolayer (ML))/Pt (1 ML)]n (n: the number of the alternation period) ferromagnetic layers and an Au spacer layer showed spin-transfer induced switching… ▽ More We fabricated a current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) nanopillar with a 1-nm-thick FePt free layer having perpendicular anisotropy using the alternate monatomic layer deposition method. Nanopillars consisting of [Fe (1 monolayer (ML))/Pt (1 ML)]n (n: the number of the alternation period) ferromagnetic layers and an Au spacer layer showed spin-transfer induced switching at room temperature. △ Less

Submitted 4 April, 2008; originally announced April 2008.

Comments: 11 pages

Journal ref: Applied Physics Express 1, 041302 (2008)

Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers

Authors: T. Nagahama, T. S. Santos, J. S. Moodera

Abstract: In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is contrary to conventional magnetic tunnel junctions (MTJs). This behavior can be understood as due to Fowler-Nordheim tunneling through the fully spin-polariz… ▽ More In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is contrary to conventional magnetic tunnel junctions (MTJs). This behavior can be understood as due to Fowler-Nordheim tunneling through the fully spin-polarized EuS conduction band. The I-V characteristics and bias dependence of MR calculated using tunneling theory shows excellent agreement with experiment. △ Less

Submitted 12 March, 2007; originally announced March 2007.

Comments: 4pages, 4Postscript figures, RevTeX4