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GdAlSi: An antiferromagnetic topological Weyl semimetal with non-relativistic spin splitting
Authors:
Jadupati Nag,
Bishal Das,
Sayantika Bhowal,
Yukimi Nishioka,
Barnabha Bandyopadhyay,
Shiv Kumar,
Kenta Kuroda,
Akio Kimura,
K. G. Suresh,
Aftab Alam
Abstract:
Spintronics has emerged as a viable alternative to traditional electronics based technologies in the past few decades. While on one hand, the discovery of topological phases of matter with protected spin-polarized states has opened up exciting prospects, recent revelation of intriguing non-relativistic spin splitting in collinear antiferromagnetic materials with unique symmetries facilitate a wide…
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Spintronics has emerged as a viable alternative to traditional electronics based technologies in the past few decades. While on one hand, the discovery of topological phases of matter with protected spin-polarized states has opened up exciting prospects, recent revelation of intriguing non-relativistic spin splitting in collinear antiferromagnetic materials with unique symmetries facilitate a wide possibility of realizing both these features simultaneously. In this work, we report the co-existence of these two intriguing properties within a single material: GdAlSi. It crystallizes in a body-centered tetragonal structure with a non-centrosymmetric space group $I4_{1}md$ ($109$). The magnetization data indicates antiferromagnetic ordering with an ordering temperature ($T_N$) 32 K. Ab-initio calculations reveal GdAlSi to be a collinear antiferromagnetic Weyl semimetal with an unconventional, momentum-dependent spin splitting, also referred to as altermagnet. Angle-resolved photoemission spectroscopy measurements on GdAlSi single crystals subsequently confirm the presence of Fermi arcs, a distinctive hallmark of Weyl semimetals. Electric and magnetic multipole analysis provides a deeper understanding of the symmetry-mediated, momentum-dependent spin splitting, which has strictly non-relativistic origin. To the best of our knowledge, such co-existence of unconventional antiferromagnetic order and non-trivial topology is unprecedented and has never been observed before in a single material, rendering GdAlSi a special and promising candidate material. We propose a device harnessing these features, poised to enable practical and efficient topotronic applications.
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Submitted 20 December, 2023; v1 submitted 19 December, 2023;
originally announced December 2023.
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CoRuVSi: A potential candidate for spin semimetal with promising spintronic and thermoelectric properties
Authors:
Jadupati Nag,
R. Venkatesh,
Ajay Jha,
Plamen Stamenov,
P. D. Babu,
Aftab Alam,
K. G. Suresh
Abstract:
Based on our experimental and theoretical studies, we report the identification of the quaternary Heusler alloy, CoRuVSi as a new member of the recently discovered spin semimetals class. Spin polarised semimetals possess a unique band structure in which one of the spin bands shows semimetallic nature, while the other shows semiconducting/insulating nature. Our findings show that CoRuVSi possesses…
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Based on our experimental and theoretical studies, we report the identification of the quaternary Heusler alloy, CoRuVSi as a new member of the recently discovered spin semimetals class. Spin polarised semimetals possess a unique band structure in which one of the spin bands shows semimetallic nature, while the other shows semiconducting/insulating nature. Our findings show that CoRuVSi possesses interesting spintronic and thermoelectric properties. Magnetization data reveal a weak ferri-/antiferro magnetic ordering at low temperatures, with only a very small moment $\sim$ 0.13 $μ_B$/f.u., attributed to the disorder. Transport results provide strong evidence of semimetallicity dominated by two-band conduction, while magnetoresistance data show a non-saturating, linear, positive, magnetoresistance. Spin polarization measurements using point-contact Andreev reflection spectra reveal a reasonably high spin polarization of $\sim$ 50\%, which matches fairly well with the simulated result. Furthermore, CoRuVSi shows a high thermopower value of $0.7$ $m Watt/ m-K^{2}$ at room temperature with the dominant contribution from the semimetallic bands, rendering it as a promising thermoelectric material as well. Our ab-initio simulation not only confirms a unique semimetallic feature, but also reveals that the band structure hosts a linear band crossing at $\sim$ -0.4 eV below the Fermi level incorporated by a band-inversion. In addition, the observed topological non-trivial features of the band structure is corroborated with the simulated Berry curvature, intrinsic anomalous Hall conductivity and the Fermi surface. The coexistence of many interesting properties relevant for spintronic, topological and thermoelectric applications in a single material is extremely rare and hence this study could promote a similar strategy to identify other potential materials belonging to same class.
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Submitted 14 January, 2023;
originally announced January 2023.
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Griffiths' phase behavior of the Weyl semimetal CrFeVGa
Authors:
Jadupati Nag,
P. C. Sreeparvathy,
R. Venkatesh,
P. D. Babu,
K. G. Suresh,
Aftab Alam
Abstract:
We report a combined theoretical and experimental study of a new topological semimetal CrFeVGa with an emphasis on the role of atomic disorder on the magnetoelectronic properties and its applications.CrFeVGa belongs to the quaternary Heusler alloy family and crystallizes in the cubic structure. Synchrotron XRD measurement confirms B2 disorder, which plays a crucial role in dictating the electronic…
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We report a combined theoretical and experimental study of a new topological semimetal CrFeVGa with an emphasis on the role of atomic disorder on the magnetoelectronic properties and its applications.CrFeVGa belongs to the quaternary Heusler alloy family and crystallizes in the cubic structure. Synchrotron XRD measurement confirms B2 disorder, which plays a crucial role in dictating the electronic and magnetic properties of the system.
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Submitted 14 December, 2022;
originally announced December 2022.
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FeRhCrSi: A new spin semimetal with room temperature spin-valve behavior
Authors:
Y. Venkateswara,
Jadupati Nag,
S. Shanmukharao Samatham,
Akhilesh Kumar Patel,
P. D. Babu,
Manoj Raama Varma,
Jayita Nayak,
K. G. Suresh,
Aftab Alam
Abstract:
Spin semimetals are a recently discovered new class of spintronic materials, which exhibit a band gap in one spin channel while a semimetallic feature in the other and thus allows for tunable spin transport. Here, we present experimental verification of spin semimetallic behavior in FeRhCrSi, a quaternary Heusler alloy with saturation moment 2 $μ_B$ and Curie temperature $>$ 400 K. It crystallises…
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Spin semimetals are a recently discovered new class of spintronic materials, which exhibit a band gap in one spin channel while a semimetallic feature in the other and thus allows for tunable spin transport. Here, we present experimental verification of spin semimetallic behavior in FeRhCrSi, a quaternary Heusler alloy with saturation moment 2 $μ_B$ and Curie temperature $>$ 400 K. It crystallises in the L2$_1$ structure with 50$\%$ antisite disorder between Fe and Rh. Below 300 K, it shows a weakly temperature dependent electrical resistivity with negative temperature coefficient, indicating the normal semimetal or spin semimetal behavior. Anomalous magnetoresistance data reveals dominant contribution from asymmetric part, a clear signature of spin-valve nature, which is retained even at room temperature. \textcolor{black}{The asymmetric part of magneto-resistance shows an unusual increase with increasing temperature.} Hall measurements confirm the anomalous nature of conductivity originating from the intrinsic Berry curvature, with holes being the majority carriers. Ab-initio simulation confirms a unique long-range ferrimagnetic ordering to be the ground state, explaining the origin behind the unexpected low saturation moment. The ferrimagnetic disordered structure confirms the spin semimetallic feature of FeRhCrSi, as observed experimentally.
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Submitted 26 January, 2023; v1 submitted 1 December, 2022;
originally announced December 2022.
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Fabrication of highly resistive NiO thin films for nanoelectronic applications
Authors:
Johannes Mohr,
Tyler Hennen,
Daniel Bedau,
Joyeeta Nag,
Rainer Waser,
Dirk J. Wouters
Abstract:
Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the film properties of thin films deposited using sputtering. A cluster anal…
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Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the film properties of thin films deposited using sputtering. A cluster analysis is performed, and four main types of films are found. Among them, the desired insulating phase is identified. From this material, nanoscale devices are fabricated, which demonstrate that the results carry over to relevant length scales. Initial switching results are reported.
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Submitted 21 July, 2022;
originally announced July 2022.
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CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications
Authors:
Jadupati Nag,
Deepika Rani,
Durgesh Singh,
R. Venkatesh,
Bhawna Sahni,
A. K. Yadav,
S. N. Jha,
D. Bhattacharyya,
P. D. Babu,
K. G. Suresh,
Aftab Alam
Abstract:
We report a combined theoretical and experimental study of a novel quaternary Heusler system CoFeVSb from the view point of room temperature spintronics and thermoelectric applications. It crystallizes in cubic structure with small DO$_3$-type disorder. The presence of disorder is confirmed by room temperature synchrotron X-ray diffraction(XRD) and extended X-ray absorption fine structure (EXAFS)…
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We report a combined theoretical and experimental study of a novel quaternary Heusler system CoFeVSb from the view point of room temperature spintronics and thermoelectric applications. It crystallizes in cubic structure with small DO$_3$-type disorder. The presence of disorder is confirmed by room temperature synchrotron X-ray diffraction(XRD) and extended X-ray absorption fine structure (EXAFS) measurements. Magnetization data reveal high ordering temperature with a saturation magnetization of 2.2 $μ_B$/f.u. Resistivity measurements reflect half-metallic nature. Double hysteresis loop along with asymmetry in the magnetoresistance(MR) data reveals room temperature spin-valve feature, which remains stable even at 300 K. Hall measurements show anomalous behavior with significant contribution from intrinsic Berry phase. This compound also large room temperature power factor ($\sim0.62$ mWatt/m/K$^{2}$) and ultra low lattice thermal conductivity ($\sim0.4$ W/m/K), making it a promising candidate for thermoelectric application. Ab-initio calculations suggest weak half-metallic behavior and reduced magnetization (in agreement with experiment) in presence of DO$_3$ disorder. We have also found an energetically competing ferromagnetic FM)/antiferromagnetic (AFM) interface structure within an otherwise FM matrix: one of the prerequisites for spin valve behavior. Coexistence of so many promising features in a single system is rare, and hence CoFeVSb gives a fertile platform to explore numerous applications in future.
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Submitted 28 November, 2021;
originally announced November 2021.
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Colossal Anomalous Hall Conductivity and Topological Hall Effect in Ferromagnetic Kagome Metal Nd$_3$Al
Authors:
Durgesh Singh,
Jadupati Nag,
Sankararao Yadam,
V. Ganesan,
Aftab Alam,
K. G. Suresh
Abstract:
Historically, the genesis of anomalous Hall effect (AHE) in magnetic materials has always been a fascinating yet controversial topic in the solid state physics community. Recent progress on the understanding of this topic has revealed an intimate connection between the Berry curvature of occupied electronic states and the intrinsic AHE. Magnetic Weyl semimetals with broken time reversal symmetry i…
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Historically, the genesis of anomalous Hall effect (AHE) in magnetic materials has always been a fascinating yet controversial topic in the solid state physics community. Recent progress on the understanding of this topic has revealed an intimate connection between the Berry curvature of occupied electronic states and the intrinsic AHE. Magnetic Weyl semimetals with broken time reversal symmetry is a classic example, which is expected to show large contributions to Berry curvature around the topological nodes and hence to the AHE. Here, we report a kagome metallic ferromagnet Nd$_3$Al, with a large unconventional positive magnetoresistance (~ 80 %) and colossal anomalous Hall conductivity of 1.8x10^5 S/cm (largest ever reported to the best of our knowledge). We also show that the magnetic state of this compound is quite different from its analogues in many respects. While the compound is predominantly an itinerant ferromagnet, its low temperature phase exhibits topological band structure, enhanced skew scattering as well as topological spin texture arising in the spin frustrated kagome lattice. Various experimental findings such as topological Hall effect, non-saturating positive magnetoresistance etc. give strong indication to this scenario. Ab-initio calculations broadly confirm the experimental findings by revealing the presence of flat bands and Weyl points originating from the itinerant Nd moments. The non-trivial band structure, enhanced skew scattering and the spin texture in a clean polycrystalline sample are found be responsible for the colossal Hall conductivity and topological Hall effect.
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Submitted 25 November, 2021;
originally announced November 2021.
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Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices
Authors:
Kiumars Aryana,
John T. Gaskins,
Joyeeta Nag,
Derek A. Stewart,
Zhaoqiang Bai,
Saikat Mukhopadhyay,
John C. Read,
David H. Olson,
Eric R. Hoglund,
James M. Howe,
Ashutosh Giri,
Michael K. Grobis,
Patrick E. Hopkins
Abstract:
Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close…
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Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs.
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Submitted 10 November, 2020;
originally announced November 2020.
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Bipolar Magnetic Semiconducting Behavior in VNbRuAl: A New Spintronic Material for Spin Filters
Authors:
Jadupati Nag,
Deepika Rani,
Jiban Kangsabanik,
P. D. Babu,
K. G. Suresh,
Aftab Alam
Abstract:
We report the theoretical prediction of a new class of spintronic materials, namely bipolar magnetic semiconductor (BMS), which is also supported by our experimental data. BMS acquires a unique band structure with unequal band gaps for spin up and down channels, and thus are useful for tunable spin transport based applications such as spin filters. The valence band (VB) and conduction band (CB) in…
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We report the theoretical prediction of a new class of spintronic materials, namely bipolar magnetic semiconductor (BMS), which is also supported by our experimental data. BMS acquires a unique band structure with unequal band gaps for spin up and down channels, and thus are useful for tunable spin transport based applications such as spin filters. The valence band (VB) and conduction band (CB) in BMS approach the Fermi level through opposite spin channels, and hence facilitate to achieve reversible spin polarization which are controllable via applied gate voltage. We report the quaternary Heusler alloy VNbRuAl to exactly possess the band structure of BMS. The alloy is found to crystallize in LiMgPdSn prototype structure (space group $F\bar{4}3m$) with B$2$ disorder and lattice parameter 6.15 Å. The resistivity and Hall measurements show a two channel semiconducting behavior and a quasi linear dependence of negative magneto resistance (MR) indicating the possible semiconducting nature. Interestingly, VNbRuAl also shows a fully compensated ferrimagnetic (FCF) behavior with vanishing net magnetization (m$_s$$\sim$ $10^{-3}$ $μ_B/f.u.$) and significantly high ordering temperature ($> 900$ K). Unlike conventional FCF, vanishing moment in this case appears to be the result of a combination of long range antiferromagnetic (AFM) ordering and the inherent B2 disorder of the crystal. This study opens up the possibility of finding a class of materials for AFM spintronics, with great significance both from fundamental and applied fronts.
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Submitted 1 November, 2020;
originally announced November 2020.
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Ultrafast changes in lattice symmetry probed by coherent phonons
Authors:
Simon Wall,
Daniel Wegkamp,
Laura Foglia,
Joyeeta Nag,
Richard F. Haglund Jr.,
Julia Staehler,
Martin Wolf
Abstract:
The electronic and structural properties of a material are strongly determined by its symmetry. Changing the symmetry via a photoinduced phase transition offers new ways to manipulate material properties on ultrafast timescales. However, in order to identify when and how fast these phase transitions occur, methods that can probe the symmetry change in the time domain are required. We show that a t…
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The electronic and structural properties of a material are strongly determined by its symmetry. Changing the symmetry via a photoinduced phase transition offers new ways to manipulate material properties on ultrafast timescales. However, in order to identify when and how fast these phase transitions occur, methods that can probe the symmetry change in the time domain are required. We show that a time-dependent change in the coherent phonon spectrum can probe a change in symmetry of the lattice potential, thus providing an all-optical probe of structural transitions. We examine the photoinduced structural phase transition in VO2 and show that, above the phase transition threshold, photoexcitation completely changes the lattice potential on an ultrafast timescale. The loss of the equilibrium-phase phonon modes occurs promptly, indicating a non-thermal pathway for the photoinduced phase transition, where a strong perturbation to the lattice potential changes its symmetry before ionic rearrangement has occurred.
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Submitted 25 July, 2012; v1 submitted 7 December, 2010;
originally announced December 2010.
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Non-congruence of thermally driven structural and electronic transition in VO2
Authors:
Joyeeta Nag,
Richard Haglund,
Andrew Payzant,
Karren More
Abstract:
Coupled structural and electronic phase transitions underlie the multifunctional properties of strongly-correlated materials. For example, colossal magnetoresistance1,2 in manganites involves phase transition from paramagnetic insulator to ferromagnetic metal linked to a structural Jahn-Teller distortion3. Vanadium dioxide (VO2) likewise exhibits an insulator-to-metal transition (IMT) at ~67oC wit…
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Coupled structural and electronic phase transitions underlie the multifunctional properties of strongly-correlated materials. For example, colossal magnetoresistance1,2 in manganites involves phase transition from paramagnetic insulator to ferromagnetic metal linked to a structural Jahn-Teller distortion3. Vanadium dioxide (VO2) likewise exhibits an insulator-to-metal transition (IMT) at ~67oC with abrupt changes in transport and optical properties and coupled to a structural phase transition (SPT) from monoclinic to tetragonal4. The IMT and SPT hystereses are signatures of first-order phase transition tracking the nucleation to stabilization of a new phase. Here we have for the first time measured independently the IMT and SPT hystereses in epitaxial VO2 films, and shown that the hystereses are not congruent. From the measured volume fractions of the two phases in the region of strong correlation, we have computed the evolving dielectric function under an effective-medium approximation. But the computed dielectric functions could not reproduce the measured IMT, implying that there is a strongly correlated metallic phase that is not in the stable rutile structure, consistent with Qazilbash et al5. Search for a corresponding macroscopic structural intermediate also yielded negative result.
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Submitted 19 March, 2010;
originally announced March 2010.
