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Picosecond transfer from short-term to long-term memory in analog antiferromagnetic memory device
Authors:
M. Surynek,
J. Zubac,
K. Olejnik,
A. Farkas,
F. Krizek,
L. Nadvornik,
P. Kubascik,
F. Trojanek,
R. P. Campion,
V. Novak,
T. Jungwirth,
P. Nemec
Abstract:
Experiments in materials with a compensated ordering of magnetic moments have demonstrated a potential for approaching the thermodynamic limit of the fastest and least-dissipative operation of a digital memory bit. In addition, these materials are very promising for a construction of energy-efficient analog devices with neuromorphic functionalities, which are inspired by computing-in-memory capabi…
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Experiments in materials with a compensated ordering of magnetic moments have demonstrated a potential for approaching the thermodynamic limit of the fastest and least-dissipative operation of a digital memory bit. In addition, these materials are very promising for a construction of energy-efficient analog devices with neuromorphic functionalities, which are inspired by computing-in-memory capabilities of the human brain. In this paper, we report on experimental separation of switching-related and heat-related resistance signal dynamics in memory devices microfabricated from CuMnAs antiferromagnetic metal. We show that the memory variable multilevel resistance can be used as a long-term memory (LTM), lasting up to minutes at room temperature. In addition, ultrafast reflectivity change and heat dissipation from nanoscale-thickness CuMnAs films, taking place on picosecond to hundreds of nanoseconds time scales, can be used as a short-term memory (STM). Information about input stimuli, represented by femtosecond laser pulses, can be transferred from STM to LTM after rehearsals at picosecond to nanosecond times in these memory devices, where information can be retrieved at times up to 10^15 longer than the input pulse duration. Our results open a route towards ultra-fast low-power implementations of spiking neuron and synapse functionalities using a resistive analog antiferromagnetic memory.
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Submitted 30 January, 2024;
originally announced January 2024.
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Accessing ultrafast spin-transport dynamics in copper using broadband terahertz spectroscopy
Authors:
Jiří Jechumtál,
Reza Rouzegar,
Oliver Gueckstock,
Christian Denker,
Wolfgang Hoppe,
Quentin Remy,
Tom S. Seifert,
Peter Kubaščík,
Georg Woltersdorf,
Piet W. Brouwer,
Markus Münzenberg,
Tobias Kampfrath,
Lukáš Nádvorník
Abstract:
We study the spatiotemporal dynamics of ultrafast electron spin transport across nanometer-thick copper layers using broadband terahertz spectroscopy. Our analysis of temporal delays, broadening and attenuation of the spin-current pulse revealed ballistic-like propagation of the pulse peak, approaching the Fermi velocity, and diffusive features including a significant velocity dispersion. A compar…
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We study the spatiotemporal dynamics of ultrafast electron spin transport across nanometer-thick copper layers using broadband terahertz spectroscopy. Our analysis of temporal delays, broadening and attenuation of the spin-current pulse revealed ballistic-like propagation of the pulse peak, approaching the Fermi velocity, and diffusive features including a significant velocity dispersion. A comparison to the frequency-dependent Ficks law identified the diffusion-dominated transport regime for distances larger than 2 nm. The findings lie the groundwork for designing future broadband spintronic devices.
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Submitted 21 May, 2024; v1 submitted 18 October, 2023;
originally announced October 2023.
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Terahertz spin conductance probes of coherent and incoherent spin tunneling through MgO tunnel junctions
Authors:
R. Rouzegar,
M. A. Wahada,
A. L. Chekhov,
W. Hoppe,
J. Jechumtal,
L. Nadvornik,
M. Wolf,
T. S. Seifert,
S. S. P. Parkin,
G. Woltersdorf,
P. W. Brouwer,
T. Kampfrath
Abstract:
We study femtosecond spin currents through MgO tunneling barriers in CoFeB(2 nm)|MgO($d$)|Pt(2 nm) stacks by terahertz emission spectroscopy. To obtain transport information independent of extrinsic experimental factors, we determine the complex-valued spin conductance $\tilde{G}_d (ω)$ of the MgO layer (thickness d= 0-6 Å over a wide frequency range $(ω/2π=$ 0.5-8 THz). In the time $(t)$ domain,…
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We study femtosecond spin currents through MgO tunneling barriers in CoFeB(2 nm)|MgO($d$)|Pt(2 nm) stacks by terahertz emission spectroscopy. To obtain transport information independent of extrinsic experimental factors, we determine the complex-valued spin conductance $\tilde{G}_d (ω)$ of the MgO layer (thickness d= 0-6 Å over a wide frequency range $(ω/2π=$ 0.5-8 THz). In the time $(t)$ domain,$ G_d (t)$ has an instantaneous and delayed component that point to (i) spin transport through Pt pinholes in MgO, (ii) coherent spin tunneling and (iii) incoherent resonant spin tunneling mediated by defect states in MgO. A remarkable signature of (iii) is its relaxation time that grows monotonically with $d$ to as much as 270 fs at $d= 6$ Å, in full agreement with an analytical model. Our results indicate that terahertz spin conductance spectroscopy will yield new and relevant insights into ultrafast spin transport for a wide range of materials.
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Submitted 1 June, 2023; v1 submitted 15 May, 2023;
originally announced May 2023.
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Terahertz probing of anisotropic conductivity and morphology of CuMnAs epitaxial thin films
Authors:
Peter Kubaščík,
Andrej Farkaš,
Kamil Olejník,
Tinkara Troha,
Matěj Hývl,
Filip Krizek,
Deep C. Joshi,
Tomáš Ostatnický,
Jiří Jechumtál,
Eva Schmoranzerová,
Richard P. Campion,
Jakub Zázvorka,
Vít Novák,
Petr Kužel,
Tomáš Jungwirth,
Petr Němec,
Lukáš Nádvorník
Abstract:
Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of the manipulation of their magnetic structure via electrical, optical, and terahertz pulses of electric fields, enabling convenient approaches to the switching between magnetoresistive states of the film for the information storage. However, the magnetic structure and, thus, the efficiency of the manipulation can be…
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Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of the manipulation of their magnetic structure via electrical, optical, and terahertz pulses of electric fields, enabling convenient approaches to the switching between magnetoresistive states of the film for the information storage. However, the magnetic structure and, thus, the efficiency of the manipulation can be affected by the film morphology and growth defects. In this study, we investigate the properties of CuMnAs thin films by probing the defect-related uniaxial anisotropy of electric conductivity by contact-free terahertz transmission spectroscopy. We show that the terahertz measurements conveniently detect the conductivity anisotropy, that are consistent with conventional DC Hall-bar measurements. Moreover, the terahertz technique allows for considerably finer determination of anisotropy axes and it is less sensitive to the local film degradation. Thanks to the averaging over a large detection area, the THz probing also allows for an analysis of strongly non-uniform thin films. Using scanning near-field terahertz and electron microscopies, we relate the observed anisotropic conductivity of CuMnAs to the elongation and orientation of growth defects, which influence the local microscopic conductivity. We also demonstrate control over the morphology of defects by using vicinal substrates.
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Submitted 27 March, 2023;
originally announced March 2023.
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Terahertz spin-to-charge current conversion in stacks of ferromagnets and the transition-metal dichalcogenide NbSe$_2$
Authors:
Lukáš Nádvorník,
Oliver Gueckstock,
Lukas Braun,
Chengwang Niu,
Joachim Gräfe,
Gunther Richter,
Gisela Schütz,
Hidenori Takagi,
Tom S. Seifert,
Peter Kubaščík,
Avanindra K. Pandeya,
Abdelmadjid Anane,
Heejun Yang,
Amilcar Bedoya-Pinto,
Stuart S. P. Parkin,
Martin Wolf,
Yuriy Mokrousov,
Hiroyuki Nakamura,
Tobias Kampfrath
Abstract:
Transition-metal dichalcogenides (TMDCs) are an aspiring class of materials with unique electronic and optical properties and potential applications in spin-based electronics. Here, we use terahertz emission spectroscopy to study spin-to-charge current conversion (S2C) in the TMDC NbSe$_2$ in ultra-high-vacuum-grown F|NbSe$_2$ thin-film stacks, where F is a layer of ferromagnetic Fe or Ni. Ultrafa…
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Transition-metal dichalcogenides (TMDCs) are an aspiring class of materials with unique electronic and optical properties and potential applications in spin-based electronics. Here, we use terahertz emission spectroscopy to study spin-to-charge current conversion (S2C) in the TMDC NbSe$_2$ in ultra-high-vacuum-grown F|NbSe$_2$ thin-film stacks, where F is a layer of ferromagnetic Fe or Ni. Ultrafast laser excitation triggers an ultrafast spin current that is converted into an in-plane charge current and, thus, a measurable THz electromagnetic pulse. The THz signal amplitude as a function of the NbSe$_2$ thickness shows that the measured signals are fully consistent with an ultrafast optically driven injection of an in-plane-polarized spin current into NbSe$_2$. Modeling of the spin-current dynamics reveals that a sizable fraction of the total S2C originates from the bulk of NbSe$_2$ with the same, negative, sign as the spin Hall angle of pure Nb. By quantitative comparison of the emitted THz radiation from F|NbSe$_2$ to F|Pt reference samples and the results of ab-initio calculations, we estimate that the spin Hall angle of NbSe$_2$ for an in-plane polarized spin current lies between -0.2% and -1.1%, while the THz spin-current relaxation length is of the order of a few nanometers.
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Submitted 1 August, 2022;
originally announced August 2022.
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Impact of gigahertz and terahertz transport regimes on spin propagation and conversion in the antiferromagnet IrMn
Authors:
Oliver Gueckstock,
Rafael L. Seeger,
Tom S. Seifert,
Stephane Auffret,
Serge Gambarelli,
Jan N. Kirchhof,
Kirill I. Bolotin,
Vincent Baltz,
Tobias Kampfrath,
Lukáš Nádvorník
Abstract:
Control over spin transport in antiferromagnetic systems is essential for future spintronic applications with operational speeds extending to ultrafast time scales. Here, we study the transition from the gigahertz (GHz) to terahertz (THz) regime of spin transport and spin-to-charge current conversion (S2C) in the prototypical antiferromagnet IrMn by employing spin pum** and THz spectroscopy tech…
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Control over spin transport in antiferromagnetic systems is essential for future spintronic applications with operational speeds extending to ultrafast time scales. Here, we study the transition from the gigahertz (GHz) to terahertz (THz) regime of spin transport and spin-to-charge current conversion (S2C) in the prototypical antiferromagnet IrMn by employing spin pum** and THz spectroscopy techniques. We reveal a factor of 4 shorter characteristic propagation lengths of the spin current at THz frequencies (~ 0.5 nm) as compared to the GHz regime (~ 2 nm) which may be attributed to the ballistic and diffusive nature of electronic spin transport, respectively. The conclusion is supported by an extraction of sub-picosecond temporal dynamics of the THz spin current. We also report on a significant impact of the S2C originating from the IrMn/non-magnetic metal interface which is much more pronounced in the THz regime and opens the door for optimization of the spin control at ultrafast time scales.
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Submitted 12 February, 2022; v1 submitted 7 November, 2021;
originally announced November 2021.
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Transition of laser-induced terahertz spin currents from torque- to conduction-electron-mediated transport
Authors:
Pilar Jiménez-Cavero,
Oliver Gueckstock,
Lukáš Nádvorník,
Irene Lucas,
Tom S. Seifert,
Martin Wolf,
Reza Rouzegar,
Piet W. Brouwer,
Sven Becker,
Gerhard Jakob,
Mathias Kläui,
Chenyang Guo,
Caihua Wan,
Xiufeng Han,
Zuanming **,
Hui Zhao,
Di Wu,
Luis Morellón,
Tobias Kampfrath
Abstract:
Spin transport is crucial for future spintronic devices operating at bandwidths up to the terahertz (THz) range. In F|N thin-film stacks made of a ferro/ferrimagnetic layer F and a normal-metal layer N, spin transport is mediated by (1) spin-polarized conduction electrons and/or (2) torque between electron spins. To identify a cross-over from (1) to (2), we study laser-driven spin currents in F|Pt…
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Spin transport is crucial for future spintronic devices operating at bandwidths up to the terahertz (THz) range. In F|N thin-film stacks made of a ferro/ferrimagnetic layer F and a normal-metal layer N, spin transport is mediated by (1) spin-polarized conduction electrons and/or (2) torque between electron spins. To identify a cross-over from (1) to (2), we study laser-driven spin currents in F|Pt stacks where F consists of model materials with different degrees of electrical conductivity. For the magnetic insulators YIG, GIG and maghemite, identical dynamics is observed. It arises from the THz interfacial spin Seebeck effect (SSE), is fully determined by the relaxation of the electrons in the metal layer and provides an estimate of the spin-mixing conductance of the GIG/Pt interface. Remarkably, in the half-metallic ferrimagnet Fe3O4 (magnetite), our measurements reveal two spin-current components with opposite direction. The slower, positive component exhibits SSE dynamics and is assigned to torque-type magnon excitation of the A- and B-spin sublattices of Fe3O4. The faster, negative component arises from the pyro-spintronic effect and can consistently be assigned to ultrafast demagnetization of e-sublattice minority-spin hop** electrons. This observation supports the magneto-electronic model of Fe3O4. In general, our results provide a new route to the contact-free separation of torque- and conduction-electron-mediated spin currents.
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Submitted 20 November, 2021; v1 submitted 11 October, 2021;
originally announced October 2021.
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Optically gated terahertz-field-driven switching of antiferromagnetic CuMnAs
Authors:
J. J. F. Heitz,
L. Nádvorník,
V. Balos,
Y. Behovits,
A. L. Chekhov,
T. S. Seifert,
K. Olejník,
Z. Kašpar,
K. Geishendorf,
V. Novák,
R. P. Campion,
M. Wolf,
T. Jungwirth,
T. Kampfrath
Abstract:
We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines…
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We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines the time scale of the suppression. As we do not observe a direct impact of the optical pulse on the state of CuMnAs, all observed effects are primarily mediated by the substrate. The sample region of suppressed resistance switching is given by the optical spot size, thereby making our scheme potentially applicable for transient low-power masking of structured areas with feature sizes of ~100 nm and even smaller.
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Submitted 16 June, 2021;
originally announced June 2021.
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Laser-induced terahertz spin transport in magnetic nanostructures arises from the same force as ultrafast demagnetization
Authors:
R. Rouzegar,
L. Brandt,
L. Nadvornik,
D. A. Reiss,
A. L. Chekhov,
O. Gueckstock,
C. In,
M. Wolf,
T. S. Seifert,
P. W. Brouwer,
G. Woltersdorf,
T. Kampfrath
Abstract:
Laser-induced terahertz spin transport (TST) and ultrafast demagnetization (UDM) are central but so far disconnected phenomena in femtomagnetism and terahertz spintronics. Here, we use broadband terahertz emission spectroscopy to reliably measure both processes in one setup. We find that the rate of UDM of a single ferromagnetic metal film F has the same time evolution as the flux of TST from F in…
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Laser-induced terahertz spin transport (TST) and ultrafast demagnetization (UDM) are central but so far disconnected phenomena in femtomagnetism and terahertz spintronics. Here, we use broadband terahertz emission spectroscopy to reliably measure both processes in one setup. We find that the rate of UDM of a single ferromagnetic metal film F has the same time evolution as the flux of TST from F into an adjacent normal-metal layer N. This remarkable agreement shows that UDM and TST are driven by the same force, which is fully determined by the state of the ferromagnet. An analytical model consistently and quantitatively explains our observations. It reveals that both UDM in F and TST in the F|N stack arise from a generalized spin voltage, which is defined for arbitrary, nonthermal electron distributions. We also conclude that contributions due to a possible temperature difference between F and N are minor and that the spin-current amplitude can, in principle, be increased by one order of magnitude. In general, our findings allow one to apply the vast knowledge of UDM to TST, thereby opening up new pathways toward large-amplitude terahertz spin currents and, thus, energy-efficient ultrafast spintronic devices.
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Submitted 25 May, 2021; v1 submitted 22 March, 2021;
originally announced March 2021.
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Frequency-independent terahertz anomalous Hall effect in DyCo$_{5}$, Co$_{32}$Fe$_{68}$ and Gd$_{27}$Fe$_{73}$ thin films from DC to 40 THz
Authors:
Tom S. Seifert,
Ulrike Martens,
Florin Radu,
Mirkow Ribow,
Marco Berritta,
Lukas Nádvorník,
Ronald Starke,
Tomas Jungwirth,
Martin Wolf,
Ilie Radu,
Markus Münzenberg,
Peter M. Oppeneer,
Georg Woltersdorf,
Tobias Kampfrath
Abstract:
The anomalous Hall effect (AHE) is a fundamental spintronic charge-to-charge-current conversion phenomenon and closely related to spin-to-charge-current conversion by the spin Hall effect. Future high-speed spintronic devices will crucially rely on such conversion effects at terahertz (THz) frequencies. Here, we reveal that the AHE remains operative from DC up to 40 THz with a flat frequency respo…
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The anomalous Hall effect (AHE) is a fundamental spintronic charge-to-charge-current conversion phenomenon and closely related to spin-to-charge-current conversion by the spin Hall effect. Future high-speed spintronic devices will crucially rely on such conversion effects at terahertz (THz) frequencies. Here, we reveal that the AHE remains operative from DC up to 40 THz with a flat frequency response in thin films of three technologically relevant magnetic materials: DyCo$_{5}$, Co$_{32}$Fe$_{68}$ and Gd$_{27}$Fe$_{73}$. We measure the frequency-dependent conductivity-tensor elements $σ_{xx}$ and $σ_{yx}$ and find good agreement with DC measurements. Our experimental findings are fully consistent with ab-initio calculations of $σ_{yx}$ for CoFe and highlight the role of the large Drude scattering rate (~100 THz) of metal thin films, which smears out any sharp spectral features of the THz AHE. Finally, we find that the intrinsic contribution to the THz AHE dominates over the extrinsic mechanisms for the Co$_{32}$Fe$_{68}$ sample. The results imply that the AHE and related effects such as the spin Hall effect are highly promising ingredients of future THz spintronic devices reliably operating from DC to 40 THz and beyond.
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Submitted 4 March, 2021; v1 submitted 3 November, 2020;
originally announced November 2020.
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Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions
Authors:
Lukáš Nadvorník,
Martin Borchert,
Liane Brandt,
Richard Schlitz,
Koen A. de Mare,
Karel Výborný,
Ingrid Mertig,
Gerhard Jakob,
Matthias Kläui,
Sebastian T. B. Goennenwein,
Martin Wolf,
Georg Woltersdorf,
Tobias Kampfrath
Abstract:
Anisotropic magnetoresistance (AMR) is a ubiquitous and versatile probe of magnetic order in contemporary spintronics research. Its origins are usually ascribed to extrinsic effects (i.e. spin-dependent electron scattering), whereas intrinsic (i.e. scattering-independent) contributions are neglected. Here, we measure AMR of polycrystalline thin films of the standard ferromagnets Co, Ni, Ni81Fe19 a…
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Anisotropic magnetoresistance (AMR) is a ubiquitous and versatile probe of magnetic order in contemporary spintronics research. Its origins are usually ascribed to extrinsic effects (i.e. spin-dependent electron scattering), whereas intrinsic (i.e. scattering-independent) contributions are neglected. Here, we measure AMR of polycrystalline thin films of the standard ferromagnets Co, Ni, Ni81Fe19 and Ni50Fe50 over the frequency range from DC to 28 THz. The large bandwidth covers the regimes of both diffusive and ballistic intraband electron transport and, thus, allows us to separate extrinsic and intrinsic AMR components. Analysis of the THz response based on Boltzmann transport theory reveals that the AMR of the Ni, Ni81Fe19 and Ni50Fe50 samples is of predominantly extrinsic nature. However, the Co thin film exhibits a sizeable intrinsic AMR contribution, which is constant up to 28 THz and amounts to more than 2/3 of the DC AMR contrast of 1%. These features are attributed to the hexagonal structure of the Co crystallites. They are interesting for applications in terahertz spintronics and terahertz photonics. Our results show that broadband terahertz electromagnetic pulses provide new and contact-free insights into magneto-transport phenomena of standard magnetic thin films on ultrafast time scales.
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Submitted 1 March, 2021; v1 submitted 13 October, 2020;
originally announced October 2020.
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Ultrafast photocurrents in MoSe$_2$ probed by terahertz spectroscopy
Authors:
Denis Yagodkin,
Lukas Nadvornik,
Oliver Gueckstock,
Cornelius Gahl,
Tobias Kampfrath,
Kirill I. Bolotin
Abstract:
We use the terahertz (THz) emission spectroscopy to study femtosecond photocurrent dynamics in the prototypical 2D semiconductor, transition metal dichalcogenide MoSe$_2$. We identify several distinct mechanisms producing THz radiation in response to an ultrashort ($30\,$fs) optical excitation in a bilayer (BL) and a multilayer (ML) sample. In the ML, the THz radiation is generated at a picosecond…
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We use the terahertz (THz) emission spectroscopy to study femtosecond photocurrent dynamics in the prototypical 2D semiconductor, transition metal dichalcogenide MoSe$_2$. We identify several distinct mechanisms producing THz radiation in response to an ultrashort ($30\,$fs) optical excitation in a bilayer (BL) and a multilayer (ML) sample. In the ML, the THz radiation is generated at a picosecond timescale by out-of-plane currents due to the drift of photoexcited charge carriers in the surface electric field. The BL emission is generated by an in-plane shift current. Finally, we observe oscillations at about $23\,$THz in the emission from the BL sample. We attribute the oscillations to quantum beats between two excitonic states with energetic separation of $\sim100\,$meV.
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Submitted 21 December, 2020; v1 submitted 27 August, 2020;
originally announced August 2020.
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Quasi-nondegenerate pump-probe magnetooptical experiment in GaAs/AlGaAs heterostructure based on spectral filtration
Authors:
M. Surynek,
L. Nadvornik,
E. Schmoranzerova,
P. Nemec
Abstract:
We report on a quasi-nondegenerate pump-probe technique that is based on spectral-filtration of femtosecond laser pulses by a pair of mutually-spectrally-disjunctive interference filters. This cost- and space-efficient approach can be used even in pump-probe microscopy where collinear propagation of pump and probe pulses is dictated by utilization of a microscopic objective. This technique solves…
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We report on a quasi-nondegenerate pump-probe technique that is based on spectral-filtration of femtosecond laser pulses by a pair of mutually-spectrally-disjunctive interference filters. This cost- and space-efficient approach can be used even in pump-probe microscopy where collinear propagation of pump and probe pulses is dictated by utilization of a microscopic objective. This technique solves the contradictory requirements on an efficient removal of pump photons from the probe beam, to achieve a good signal-to-noise ratio, simultaneously with a needed spectral proximity of the excitation and probing, which is essential for magnetooptical study of many material systems. Importantly, this spectral-filtration of 100 fs long laser pulses does not affect considerably the resulting time-resolution, which remains well below 500 fs. We demonstrate the practical applicability of this technique with close but distinct wavelengths of pump and probe pulses in spatially- and time-resolved spin-sensitive magnetooptical Kerr effect (MOKE) experiment in GaAs/AlGaAs heterostructure, where a high-mobility spin system is formed after optical injection of electrons at wavelengths close to MOKE resonance. In particular, we studied the time- and spatial-evolutions of charge-related (reflectivity) and spin-related (MOKE) signals. We revealed that they evolve in a similar but not exactly the same way which we attributed to interplay of several electron many-body effects in GaAs.
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Submitted 7 April, 2020;
originally announced April 2020.
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Terahertz spectroscopy for all-optical spintronic characterization of the spin-Hall-effect metals Pt, W and Cu$_{80}$Ir$_{20}$
Authors:
Tom Sebastian Seifert,
Ngoc Minh Tran,
Oliver Gueckstock,
Seyed Mohammedreza Rouzegar,
Lukas Nadvornik,
Samridh Jaiswal,
Gerhard Jakob,
Vasily V. Temnov,
Markus Muenzenberg,
Martin Wolf,
Mathias Klaeui,
Tobias Kampfrath
Abstract:
Identifying materials with an efficient spin-to-charge conversion is crucial for future spintronic applications. The spin Hall effect is a central mechanism as it allows for the interconversion of spin and charge currents. Spintronic material research aims at maximizing its efficiency, quantified by the spin Hall angle $Θ_{\textrm{SH}}$ and the spin-current relaxation length $λ_{\textrm{rel}}$. We…
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Identifying materials with an efficient spin-to-charge conversion is crucial for future spintronic applications. The spin Hall effect is a central mechanism as it allows for the interconversion of spin and charge currents. Spintronic material research aims at maximizing its efficiency, quantified by the spin Hall angle $Θ_{\textrm{SH}}$ and the spin-current relaxation length $λ_{\textrm{rel}}$. We develop an all-optical method with large sample throughput that allows us to extract $Θ_{\textrm{SH}}$ and $λ_{\textrm{rel}}$. Employing terahertz spectroscopy, we characterize magnetic metallic heterostructures involving Pt, W and Cu$_{80}$Ir$_{20}$ in terms of their optical and spintronic properties. We furthermore find indications that the interface plays a minor role for the spin-current transmission. Our analytical model is validated by the good agreement with literature DC values. These findings establish terahertz emission spectroscopy as a reliable tool complementing the spintronics workbench.
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Submitted 9 October, 2018; v1 submitted 6 May, 2018;
originally announced May 2018.
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Voigt effect-based wide-field magneto-optical microscope integrated in a pump-probe experimental setup
Authors:
T. Janda,
L. Nadvornik,
J. Kucharik,
D. Butkovicova,
E. Schmoranzerova,
F. Trojanek,
P. Nemec
Abstract:
In this work we describe an experimental setup for spatially-resolved pump-probe experiment with integrated wide-field magneto-optical (MO) microscope. The MO microscope can be used to study ferromagnetic materials with both perpendicular-to-plane and in-plane magnetic anisotropy via polar Kerr and Voigt effects, respectively. The functionality of the Voigt effect-based microscope was tested using…
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In this work we describe an experimental setup for spatially-resolved pump-probe experiment with integrated wide-field magneto-optical (MO) microscope. The MO microscope can be used to study ferromagnetic materials with both perpendicular-to-plane and in-plane magnetic anisotropy via polar Kerr and Voigt effects, respectively. The functionality of the Voigt effect-based microscope was tested using an in-plane magnetized ferromagnetic semiconductor (Ga,Mn)As. It was revealed that the presence of mechanical defects in the (Ga,Mn)As epilayer alters significantly the magnetic anisotropy in their proximity. The importance of MO experiments with simultaneous temporal and spatial resolutions was demonstrated using (Ga,Mn)As sample attached to a piezoelectric actuator, which produces a voltage-controlled strain. We observed a considerably different behavior in different parts of the sample that enabled us to identify sample parts where the epilayer magnetic anisotropy was significantly modified by a presence of the piezostressor and where it was not. Finally, we discuss the possible applicability of our experimental setup for the research of compensated antiferromagnets, where only MO effects even in magnetic moments are present.
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Submitted 28 February, 2018;
originally announced February 2018.
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Femtosecond formation dynamics of the spin Seebeck effect revealed by terahertz spectroscopy
Authors:
T. S. Seifert,
S. Jaiswal,
J. Barker,
S. T. Weber,
I. Razdolski,
J. Cramer,
O. Gueckstock,
S. Maehrlein,
L. Nadvornik,
S. Watanabe,
C. Ciccarelli,
A. Melnikov,
G. Jakob,
M. Münzenberg,
S. T. B. Goennenwein,
G. Woltersdorf,
B. Rethfeld,
P. W. Brouwer,
M. Wolf,
M. Kläui,
T. Kampfrath
Abstract:
Understanding the transfer of spin angular momentum is essential in modern magnetism research. A model case is the generation of magnons in magnetic insulators by heating an adjacent metal film. Here, we reveal the initial steps of this spin Seebeck effect with <27fs time resolution using terahertz spectroscopy on bilayers of ferrimagnetic yttrium-iron garnet and platinum. Upon exciting the metal…
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Understanding the transfer of spin angular momentum is essential in modern magnetism research. A model case is the generation of magnons in magnetic insulators by heating an adjacent metal film. Here, we reveal the initial steps of this spin Seebeck effect with <27fs time resolution using terahertz spectroscopy on bilayers of ferrimagnetic yttrium-iron garnet and platinum. Upon exciting the metal with an infrared laser pulse, a spin Seebeck current $j_\textrm{s}$ arises on the same ~100fs time scale on which the metal electrons thermalize. This observation highlights that efficient spin transfer critically relies on carrier multiplication and is driven by conduction electrons scattering off the metal-insulator interface. Analytical modeling shows that the electrons' dynamics are almost instantaneously imprinted onto $j_\textrm{s}$ because their spins have a correlation time of only ~4fs and deflect the ferrimagnetic moments without inertia. Applications in material characterization, interface probing, spin-noise spectroscopy and terahertz spin pum** emerge.
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Submitted 9 October, 2018; v1 submitted 3 September, 2017;
originally announced September 2017.
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Fast optical control of spin in semiconductor interfacial structures
Authors:
L. Nádvorník,
M. Surýnek,
K. Olejník,
V. Novák,
J. Wunderlich,
F. Trojánek,
T. Jungwirth,
P. Němec
Abstract:
We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations origi…
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We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations originating from different excitation laser pulses. We demonstrate that the density of spins, which is injected into the system by means of the optical orientation, can be controlled by reducing the electrostatic confinement of the system using an additional generation of photocarriers. It is also shown that the disturbed confinement recovers within hundreds of picoseconds after which spins can be again photo-injected into the system.
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Submitted 30 May, 2017;
originally announced May 2017.
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Efficient conversion of light to charge and spin in Hall-bar microdevice
Authors:
L. Nádvorník,
J. A. Haigh,
K. Olejník,
A. C. Irvine,
V. Novák,
T. Jungwirth,
J. Wunderlich
Abstract:
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude…
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We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly non-linear in the pn-bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the non-linear change in the carrier density at the Hall cross with the pn-bias.
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Submitted 13 May, 2016;
originally announced May 2016.
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Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction
Authors:
L. Nádvorník,
K. Olejník,
P. Němec,
V. Novák,
T. Janda,
J. Wunderlich,
F. Trojánek,
T. Jungwirth
Abstract:
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude…
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We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly non-linear in the pn-bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the non-linear change in the carrier density at the Hall cross with the pn-bias.
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Submitted 13 May, 2016;
originally announced May 2016.
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Nanosecond spin-transfer over tens of microns in a bare GaAs/AlGaAs layer
Authors:
L. Nádvorník,
P. Němec,
T. Janda,
K. Olejník,
V. Novák,
V. Skoromets,
H. Němec,
P. Kužel,
F. Trojánek,
T. Jungwirth,
J. Wunderlich
Abstract:
The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and t…
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The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and the time-scale at which spin-information is transferred from the injector to the detector. Using this technique, we demonstrate that in an undoped GaAs/AlGaAs layer spins are detected at distances reaching more than ten microns from the injection point at times as short as nanoseconds after the pump-pulse. The observed unique combination of the long-range and highrate electronic spin-transport requires simultaneous suppression of mechanisms limiting the spin life-time and mobility of carriers. Unlike earlier attempts focusing on elaborate do**, gating, or heterostructures we demonstrate that the bare GaAs/AlGaAs layer intrinsically provides superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex heterostructures.
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Submitted 7 October, 2015;
originally announced October 2015.
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Infrared magneto-spectroscopy of graphite in tilted fields
Authors:
N. A. Goncharuk,
L. Nadvornik,
C. Faugeras,
M. Orlita,
L. Smrcka
Abstract:
The electronic structure of Bernal-stacked graphite subject to tilted magnetic fields has been investigated using infrared magneto-transmission experiments. With the increasing in-plane component of the magnetic field B, we observe significant broadening and partially also splitting of interband inter-Landau level transitions, which originate at the H point of the graphite Brillouin zone, where th…
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The electronic structure of Bernal-stacked graphite subject to tilted magnetic fields has been investigated using infrared magneto-transmission experiments. With the increasing in-plane component of the magnetic field B, we observe significant broadening and partially also splitting of interband inter-Landau level transitions, which originate at the H point of the graphite Brillouin zone, where the charge carriers behave as massless Dirac fermions. The observed behavior is attributed to the lifting of the twofold degeneracy of Landau levels at the H point - a degeneracy which in graphite complements the standard spin and valley degeneracies typical of graphene.
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Submitted 13 August, 2012;
originally announced August 2012.
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From laterally modulated two-dimensional electron gas towards artificial graphene
Authors:
L. Nadvornik,
M. Orlita,
N. A. Goncharuk,
L. Smrcka,
V. Novak,
V. Jurka,
K. Hruska,
Z. Vyborny,
Z. R. Wasilewski,
M. Potemski,
K. Vyborny
Abstract:
Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as well as its splitting into several modes. Our explanation, based on a perturbative calculation, describes the observed phenomena as a weak effect of the lateral…
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Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as well as its splitting into several modes. Our explanation, based on a perturbative calculation, describes the observed phenomena as a weak effect of the lateral potential on the two-dimensional electron gas. Using this approach, we found a correlation between parameters of the lateral patterning and the created effective potential and obtain thus insights on how the electronic miniband structure has been tuned. The miniband dispersion was calculated using a simplified model and allowed us to formulate four basic criteria that have to be satisfied to reach graphene-like physics in such systems.
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Submitted 16 December, 2011; v1 submitted 28 April, 2011;
originally announced April 2011.
