Enhancement of ferroelectric performance in PVDF:Fe3O4 nanocomposite based organic multiferroic tunnel junctions
Authors:
Xue Gao,
Shiheng Liang,
Anthony Ferri,
Weichuan Huang,
Didier Rouxel,
Xavier Devaux,
Xiao-Guang Li,
Hongxin Yang,
Mairbek Chshiev,
Rachel Desfeux,
Antonio Da Costa,
Guichao Hu,
Mathieu Stoffel,
Abir Nachawaty,
Chun** Jiang,
Zhongming Zeng,
Jian-** Liu,
Hui Yang,
Yuan Lu
Abstract:
We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the ferroelectric properties of the OMFTJ are considerably improved compared to that with pure PVDF barrier. It can lead to a tunneling electroresistance (TER) of about 45…
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We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the ferroelectric properties of the OMFTJ are considerably improved compared to that with pure PVDF barrier. It can lead to a tunneling electroresistance (TER) of about 450% at 10K and 100% at room temperature (RT), which is much higher than that of the pure PVDF based device (70% at 10K and 7% at RT). OMFTJs based on the PVDF:Fe3O4 nanocomposite could open new functionalities in smart multiferroic devices via the interplay of the magnetism of nanoparticle with the ferroelectricity of the organic barrier.
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Submitted 7 April, 2020;
originally announced April 2020.
Magnetic-field driven ambipolar quantum Hall effect in epitaxial graphene close to the charge neutrality point
Authors:
A. Nachawaty,
M. Yang,
W. Desrat,
S. Nanot,
B. Jabakhanji,
D. Kazazis,
R. Yakimova,
A. Cresti,
W. Escoffier,
B. Jouault
Abstract:
We have investigated the disorder of epitaxial graphene close to the charge neutrality point (CNP) by various methods: i) at room temperature, by analyzing the dependence of the resistivity on the Hall coefficient ; ii) by fitting the temperature dependence of the Hall coefficient down to liquid helium temperature; iii) by fitting the magnetoresistances at low temperature. All methods converge to…
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We have investigated the disorder of epitaxial graphene close to the charge neutrality point (CNP) by various methods: i) at room temperature, by analyzing the dependence of the resistivity on the Hall coefficient ; ii) by fitting the temperature dependence of the Hall coefficient down to liquid helium temperature; iii) by fitting the magnetoresistances at low temperature. All methods converge to give a disorder amplitude of $(20 \pm 10)$ meV. Because of this relatively low disorder, close to the CNP, at low temperature, the sample resistivity does not exhibit the standard value $\simeq h/4e^2$ but diverges. Moreover, the magnetoresistance curves have a unique ambipolar behavior, which has been systematically observed for all studied samples. This is a signature of both asymmetry in the density of states and in-plane charge transfer. The microscopic origin of this behavior cannot be unambiguously determined. However, we propose a model in which the SiC substrate steps qualitatively explain the ambipolar behavior.
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Submitted 23 August, 2017;
originally announced August 2017.
