Showing 1–50 of 53 results for author: Němec, P

Picosecond transfer from short-term to long-term memory in analog antiferromagnetic memory device

Authors: M. Surynek, J. Zubac, K. Olejnik, A. Farkas, F. Krizek, L. Nadvornik, P. Kubascik, F. Trojanek, R. P. Campion, V. Novak, T. Jungwirth, P. Nemec

Abstract: Experiments in materials with a compensated ordering of magnetic moments have demonstrated a potential for approaching the thermodynamic limit of the fastest and least-dissipative operation of a digital memory bit. In addition, these materials are very promising for a construction of energy-efficient analog devices with neuromorphic functionalities, which are inspired by computing-in-memory capabi… ▽ More Experiments in materials with a compensated ordering of magnetic moments have demonstrated a potential for approaching the thermodynamic limit of the fastest and least-dissipative operation of a digital memory bit. In addition, these materials are very promising for a construction of energy-efficient analog devices with neuromorphic functionalities, which are inspired by computing-in-memory capabilities of the human brain. In this paper, we report on experimental separation of switching-related and heat-related resistance signal dynamics in memory devices microfabricated from CuMnAs antiferromagnetic metal. We show that the memory variable multilevel resistance can be used as a long-term memory (LTM), lasting up to minutes at room temperature. In addition, ultrafast reflectivity change and heat dissipation from nanoscale-thickness CuMnAs films, taking place on picosecond to hundreds of nanoseconds time scales, can be used as a short-term memory (STM). Information about input stimuli, represented by femtosecond laser pulses, can be transferred from STM to LTM after rehearsals at picosecond to nanosecond times in these memory devices, where information can be retrieved at times up to 10^15 longer than the input pulse duration. Our results open a route towards ultra-fast low-power implementations of spiking neuron and synapse functionalities using a resistive analog antiferromagnetic memory. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Comments: 21 pages, 4 figures

Twist-angle tunable spin texture in WSe$_2$/graphene van der Waals heterostructures

Authors: Haozhe Yang, Beatriz Martín-García, Jozef Kimák, Eva Schmoranzerová, Eoin Dolan, Zhendong Chi, Marco Gobbi, Petr Němec, Luis E. Hueso, Fèlix Casanova

Abstract: Angle-twisting engineering has emerged as a powerful tool for modulating electronic properties in van der Waals heterostructures. Recent theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by twist angle, although an experimental verification is missing. Here, we demonstrate the tunability of the spin texture and associated spin-charge interconversion… ▽ More Angle-twisting engineering has emerged as a powerful tool for modulating electronic properties in van der Waals heterostructures. Recent theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by twist angle, although an experimental verification is missing. Here, we demonstrate the tunability of the spin texture and associated spin-charge interconversion with twist angle in WSe$_2$/graphene heterostructures by using spin precession experiments. For specific twist angles, we experimentally detect a spin component radial with the electron's momentum, in addition to the standard orthogonal component. Our results show that the helicity of the spin texture can be reversed by angle twisting, highlighting its critical role on the spin-orbit properties of WSe$_2$/graphene heterostructures and paving the way for the development of novel spin-twistronic devices. △ Less

Submitted 15 December, 2023; originally announced December 2023.

Comments: 14 pages, 5 figures and Supplementary Information

Ultrafast Third-Order Nonlinear Optical Response of Charge Coupled Gold Nanoparticle-Ge24Se76 Heterostructure

Authors: Vinod Kumar, Rituraj Sharma, Abhishek Bhatt, I. Csarnovics, Petr Nemec, H. Jain, K. V. Adarsh

Abstract: The donor-acceptor interaction of a charge-coupled heterostructure encompassing a metal and an amorphous semiconductor subjected to a laser field has many potential applications in the realm of nonlinear optics. In this work, we fabricate an electron donor gold nanoparticle (AuNP) and acceptor amorphous Ge24Se76 heterostructure on a quartz substrate using a sequential thermal evaporation technique… ▽ More The donor-acceptor interaction of a charge-coupled heterostructure encompassing a metal and an amorphous semiconductor subjected to a laser field has many potential applications in the realm of nonlinear optics. In this work, we fabricate an electron donor gold nanoparticle (AuNP) and acceptor amorphous Ge24Se76 heterostructure on a quartz substrate using a sequential thermal evaporation technique. In this charge-coupled heterostructure, we demonstrate the ultrafast third-order nonlinear absorptive and refractive response and their sign reversal compared to pristine Ge24Se76. Enhanced optical nonlinearity in these heterostructures of varying plasmonic wavelengths is due to charge transfer, verified by the Raman spectroscopy. Further, the ultrafast transient absorption measurements support the thesis of charge transfer in the AuNP/Ge24Se76 heterostructure. These findings open up exciting opportunities for develo** novel device technologies with far-reaching applications in nonlinear optics. △ Less

Submitted 6 July, 2023; originally announced July 2023.

Terahertz probing of anisotropic conductivity and morphology of CuMnAs epitaxial thin films

Authors: Peter Kubaščík, Andrej Farkaš, Kamil Olejník, Tinkara Troha, Matěj Hývl, Filip Krizek, Deep C. Joshi, Tomáš Ostatnický, Jiří Jechumtál, Eva Schmoranzerová, Richard P. Campion, Jakub Zázvorka, Vít Novák, Petr Kužel, Tomáš Jungwirth, Petr Němec, Lukáš Nádvorník

Abstract: Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of the manipulation of their magnetic structure via electrical, optical, and terahertz pulses of electric fields, enabling convenient approaches to the switching between magnetoresistive states of the film for the information storage. However, the magnetic structure and, thus, the efficiency of the manipulation can be… ▽ More Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of the manipulation of their magnetic structure via electrical, optical, and terahertz pulses of electric fields, enabling convenient approaches to the switching between magnetoresistive states of the film for the information storage. However, the magnetic structure and, thus, the efficiency of the manipulation can be affected by the film morphology and growth defects. In this study, we investigate the properties of CuMnAs thin films by probing the defect-related uniaxial anisotropy of electric conductivity by contact-free terahertz transmission spectroscopy. We show that the terahertz measurements conveniently detect the conductivity anisotropy, that are consistent with conventional DC Hall-bar measurements. Moreover, the terahertz technique allows for considerably finer determination of anisotropy axes and it is less sensitive to the local film degradation. Thanks to the averaging over a large detection area, the THz probing also allows for an analysis of strongly non-uniform thin films. Using scanning near-field terahertz and electron microscopies, we relate the observed anisotropic conductivity of CuMnAs to the elongation and orientation of growth defects, which influence the local microscopic conductivity. We also demonstrate control over the morphology of defects by using vicinal substrates. △ Less

Submitted 27 March, 2023; originally announced March 2023.

Comments: 33 pages, 16 figures

Anomalous Nernst effect in Mn$_3$NiN thin films

Authors: Sebastian Beckert, João Godinho, Freya Johnson, Jozef Kimák, Eva Schmoranzerová, Jan Zemen, Zbyněk Šobáň, Kamil Olejník, Jakub Železný, Joerg Wunderlich, Petr Němec, Dominik Kriegner, Andy Thomas, Sebastian T. B. Goennenwein, Lesley F Cohen, Helena Reichlová

Abstract: The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect… ▽ More The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect and its magnitude in this class of materials are, however, very limited. This scarcity may be partly due to the experimental difficulty of reliably quantifying the anomalous Nernst coefficient. Here, we report experiments on the anomalous Nernst effect in antiferromagnetic antiperovskite Mn$_3$NiN thin films. Measurement of both the anomalous Hall and Nernst effects using the same sample and measurement geometry makes it possible to directly compare these two effects and quantify the anomalous Nernst coefficient and conductivity in Mn$_3$NiN. We carefully evaluate the spatial distribution of the thermal gradient in the sample and use finite element modeling to corroborate our experimental results. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Waymo's Fatigue Risk Management Framework: Prevention, Monitoring, and Mitigation of Fatigue-Induced Risks while Testing Automated Driving Systems

Authors: Francesca Favaro, Keith Hutchings, Philip Nemec, Leticia Cavalcante, Trent Victor

Abstract: This report presents Waymo's proposal for a systematic fatigue risk management framework that addresses prevention, monitoring, and mitigation of fatigue-induced risks during on-road testing of ADS technology. The proposed framework remains flexible to incorporate continuous improvements, and was informed by state of the art practices, research, learnings, and experience (both internal and externa… ▽ More This report presents Waymo's proposal for a systematic fatigue risk management framework that addresses prevention, monitoring, and mitigation of fatigue-induced risks during on-road testing of ADS technology. The proposed framework remains flexible to incorporate continuous improvements, and was informed by state of the art practices, research, learnings, and experience (both internal and external to Waymo). Fatigue is a recognized contributory factor in a substantial fraction of on-road crashes involving human drivers, and mitigation of fatigue-induced risks is still an open concern researched world-wide. While the proposed framework was specifically designed in relation to on-road testing of SAE Level 4 ADS technology, it has implications and applicability to lower levels of automation as well. △ Less

Submitted 26 August, 2022; originally announced August 2022.

Ultrashort spin-orbit torque generated by femtosecond laser pulses

Authors: T. Janda, T. Ostatnicky, P. Nemec, E. Schmoranzerova, R. Campion, V. Hills, V. Novak, Z. Soban, J. Wunderlich

Abstract: To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin currents generated by the spin-orbit interaction at ferromagnetic/non-magnetic interfaces is one of such scalable approaches, where the ultimate switching speed… ▽ More To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin currents generated by the spin-orbit interaction at ferromagnetic/non-magnetic interfaces is one of such scalable approaches, where the ultimate switching speed is limited by the Larmor precession frequency. Understanding the magnetization precession dynamics induced by spin-orbit torques (SOTs) is therefore of great importance. Here we demonstrate generation of ultrashort SOT pulses that excite Larmor precession at an epitaxial Fe/GaAs interface by converting femtosecond laser pulses into high-amplitude current pulses in an electrically biased p-i-n photodiode. We control the polarity, amplitude, and duration of the current pulses and, most importantly, also their propagation direction with respect to the crystal orientation. The SOT origin of the excited Larmor precession was revealed by a detailed analysis of the precession phase and amplitude at different experimental conditions. △ Less

Submitted 25 August, 2022; originally announced August 2022.

Comments: 14 pages, 4 figures

Identifying the octupole Antiferromagnetic domain orientation in Mn$_{3}$NiN by scanning Anomalous Nernst Effect microscopy

Authors: F. Johnson, J. Kimák, J. Zemen, Z. Šobáň, E. Schmoranzerová, J. Godinho, P. Němec, S. Beckert, H. Reichlová, D. Boldrin, J. Wunderlich, L. F. Cohen

Abstract: The intrinsic anomalous Nernst effect in a magnetic material is governed by the Berry curvature at the Fermi energy and can be realized in non-collinear antiferromagnets with vanishing magnetization. Thin films of (001)-oriented Mn$_{3}$NiN have their chiral antiferromagnetic structure located in the (111) plane facilitating the anomalous Nernst effect unusually in two orthogonal in-plane directio… ▽ More The intrinsic anomalous Nernst effect in a magnetic material is governed by the Berry curvature at the Fermi energy and can be realized in non-collinear antiferromagnets with vanishing magnetization. Thin films of (001)-oriented Mn$_{3}$NiN have their chiral antiferromagnetic structure located in the (111) plane facilitating the anomalous Nernst effect unusually in two orthogonal in-plane directions. The sign of each component of the anomalous Nernst effect is determined by the local antiferromagnetic domain state. In this work, a temperature gradient is induced in a 50 nm thick Mn$_{3}$NiN two micron-size Hall cross by a focused scanning laser beam, and the spatial distribution of the anomalous Nernst voltage is used to image and identify the octupole macrodomain arrangement. Although the focused laser beam width may span many individual domains, cooling from room temperature through the antiferromagnetic transition temperature in an in-plane magnetic field prepares the domain state producing a checkerboard pattern resulting from the convolution of contributions from each domain. These images together with atomistic and micromagnetic simulations suggest an average macrodomain of the order of $1 μm^{2}$. △ Less

Submitted 24 May, 2022; originally announced May 2022.

Comments: 25 pages 4 figures, 6 supplementary figures F.J. and J.K. both contributed equally to this manuscript. The following article has been accepted by Applied Physics Letters. After it is published, it will be found at https://aip.scitation.org/journal/apl

Thermally induced all-optical ferromagnetic resonance in thin YIG films

Authors: E. Schmoranzerová, J. Kimák, R. Schlitz, S. T. B. Goennenwein, D. Kriegner, H. Reichlová, Z. Šobáň, G. Jakob, E. -J. Guo, M. Kläui, M. Münzenberg, P. Němec, T. Ostatnický

Abstract: All-optical ferromagnetic resonance (AO-FMR) is a powerful tool for local detection of micromagnetic parameters, such as magnetic anisotropy, Gilbert dam** or spin stiffness. In this work we demonstrate that the AO-FMR method can be used in thin films of Yttrium Iron Garnet (YIG) if a metallic cap** layer (Au, Pt) is deposited on top of the film. Magnetization precession is triggered by heatin… ▽ More All-optical ferromagnetic resonance (AO-FMR) is a powerful tool for local detection of micromagnetic parameters, such as magnetic anisotropy, Gilbert dam** or spin stiffness. In this work we demonstrate that the AO-FMR method can be used in thin films of Yttrium Iron Garnet (YIG) if a metallic cap** layer (Au, Pt) is deposited on top of the film. Magnetization precession is triggered by heating of the metallic layer with femtosecond laser pulses. The heating modifies the magneto-crystalline anisotropy of the YIG film and shifts the quasi-equilibrium orientation of magnetization, which results in precessional magnetization dynamics. The laser-induced magnetization precession corresponds to a uniform (Kittel) magnon mode, with the precession frequency determined by the magnetic anisotropy of the material as well as the external magnetic field, and the dam** time set by a Gilbert dam** parameter. The AO-FMR method thus enables measuring local magnetic properties, with spatial resolution given only by the laser spot size. △ Less

Submitted 31 October, 2021; originally announced November 2021.

Giant quadratic magneto-optical response of thin YIG films for sensitive magnetometric experiments

Authors: E. Schmoranzerová, T. Ostatnický, J. Kimák, D. Kriegner, H. Reichlová, R. Schlitz, A. Baďura, Z. Šobáň, M. Münzenberg, G. Jakob, E. -J. Guo, M. Kläui, P. Němec

Abstract: We report on observation of a magneto-optical effect quadratic in magnetization (Cotton-Mouton effect) in 50 nm thick layer of Yttrium-Iron Garnet (YIG). By a combined theoretical and experimental approach, we managed to quantify both linear and quadratic magneto-optical effects. We show that the quadratic magneto-optical signal in the thin YIG film can exceed the linear magneto-optical response,… ▽ More We report on observation of a magneto-optical effect quadratic in magnetization (Cotton-Mouton effect) in 50 nm thick layer of Yttrium-Iron Garnet (YIG). By a combined theoretical and experimental approach, we managed to quantify both linear and quadratic magneto-optical effects. We show that the quadratic magneto-optical signal in the thin YIG film can exceed the linear magneto-optical response, reaching values of 450 urad that are comparable with Heusler alloys or ferromagnetic semiconductors. Furthermore, we demonstrate that a proper choice of experimental conditions, particularly with respect to the wavelength, is crucial for optimization of the quadratic magneto-optical effect for magnetometry measurement. △ Less

Submitted 26 October, 2021; originally announced October 2021.

Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs

Authors: Tomas Janda, Joao Godinho, Tomas Ostatnicky, Emanuel Pfitzner, Georg Ulrich, Arne Hoehl, Sonka Reimers, Zbynek Soban, Thomas Metzger, Helena Reichlova, Vít Novák, Richard Campion, Joachim Heberle, Peter Wadley, Kevin Edmonds, Ollie Amin, Jas Chauhan, Sarnjeet Dhesi, Francesco Maccherozzi, Ruben Otxoa, Pierre Roy, Kamil Olejnik, Petr Němec, Tomas Jungwirth, Bernd Kaestner , et al. (1 additional authors not shown)

Abstract: Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferroma… ▽ More Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferromagnets has been a major challenge. Here we demonstrate in a collinear antiferromagnet a thermoelectric detection method by combining the magneto-Seebeck effect with local heat gradients generated by scanning far-field or near-field techniques. In a 20 nm epilayer of uniaxial CuMnAs we observe reversible 180 deg switching of the Néel vector via domain wall displacement, controlled by the polarity of the current pulses. We also image polarity-dependent 90 deg switching of the Néel vector in a thicker biaxial film, and domain shattering induced at higher pulse amplitudes. The antiferromagnetic domain maps obtained by our laboratory technique are compared to measurements by the established synchrotron microscopy using X-ray magnetic linear dichroism. △ Less

Submitted 11 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Materials 4, 094413 (2020)

Investigation of Magnetic Anisotropy and Heat Dissipation in Thin Films of Compensated Antiferromagnet CuMnAs by Pump-probe Experiment

Authors: M. Surynek, V. Saidl, Z. Kaspar, V. Novak, R. P. Campion, P. Wadley, P. Nemec

Abstract: We recently reported on a method to determine the easy axis position in a 10 nm thick film of the fully compensated antiferromagnet CuMnAs. The film had a uniaxial magnetic anisotropy and the technique utilized a magneto-optical pump and probe experiment [Nature Photonics 11, 91 (2017)]. In this contribution we discuss the applicability of this method for the investigation of a broader set of epit… ▽ More We recently reported on a method to determine the easy axis position in a 10 nm thick film of the fully compensated antiferromagnet CuMnAs. The film had a uniaxial magnetic anisotropy and the technique utilized a magneto-optical pump and probe experiment [Nature Photonics 11, 91 (2017)]. In this contribution we discuss the applicability of this method for the investigation of a broader set of epitaxial CuMnAs films having different thicknesses. This work reveals that the equilibrium magnetic anisotropy can be studied only in samples where this anisotropy is rather strong. However, in the majority of CuMnAs films, the impact of a strong pump pulse induces nano-fragmentation of the magnetic domains and, therefore, the magnetic anisotropy measured by the pump-probe technique differs substantially from that in the equilibrium conditions. We also demonstrate that optical pump-probe experiment can be used very efficiently to study the local heating and heat dissipation in CuMnAs epitaxial layers. In particular, we determined the electron-phonon relaxation time in CuMnAs. We also observed that for a local film heating by a focused laser the thinner films are heated more, but the heat is dissipated considerably faster than in the case of thicker films. This illustrates that the optical pump-probe experiment is a valuable characterization tool for the heat management optimization in the CuMnAs memory devices and can be applied in a similar way to those used during heat-assisted magnetic recording (HAMR) technology development for the latest generation of hard drive disks. △ Less

Submitted 25 May, 2020; v1 submitted 11 April, 2020; originally announced April 2020.

Comments: 20 pages, 9 figures

Journal ref: J. Appl. Phys. 127, 233904 (2020)

Quasi-nondegenerate pump-probe magnetooptical experiment in GaAs/AlGaAs heterostructure based on spectral filtration

Authors: M. Surynek, L. Nadvornik, E. Schmoranzerova, P. Nemec

Abstract: We report on a quasi-nondegenerate pump-probe technique that is based on spectral-filtration of femtosecond laser pulses by a pair of mutually-spectrally-disjunctive interference filters. This cost- and space-efficient approach can be used even in pump-probe microscopy where collinear propagation of pump and probe pulses is dictated by utilization of a microscopic objective. This technique solves… ▽ More We report on a quasi-nondegenerate pump-probe technique that is based on spectral-filtration of femtosecond laser pulses by a pair of mutually-spectrally-disjunctive interference filters. This cost- and space-efficient approach can be used even in pump-probe microscopy where collinear propagation of pump and probe pulses is dictated by utilization of a microscopic objective. This technique solves the contradictory requirements on an efficient removal of pump photons from the probe beam, to achieve a good signal-to-noise ratio, simultaneously with a needed spectral proximity of the excitation and probing, which is essential for magnetooptical study of many material systems. Importantly, this spectral-filtration of 100 fs long laser pulses does not affect considerably the resulting time-resolution, which remains well below 500 fs. We demonstrate the practical applicability of this technique with close but distinct wavelengths of pump and probe pulses in spatially- and time-resolved spin-sensitive magnetooptical Kerr effect (MOKE) experiment in GaAs/AlGaAs heterostructure, where a high-mobility spin system is formed after optical injection of electrons at wavelengths close to MOKE resonance. In particular, we studied the time- and spatial-evolutions of charge-related (reflectivity) and spin-related (MOKE) signals. We revealed that they evolve in a similar but not exactly the same way which we attributed to interplay of several electron many-body effects in GaAs. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Comments: 20 pages, 5 figures

Journal ref: New J. Phys. 22, 093065 (2020)

Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses

Authors: Zdeněk Kašpar, Miloslav Surýnek, Jan Zubáč, Filip Krizek, Vít Novák, Richard P. Campion, Martin S. Wörnle, Pietro Gambardella, Xavier Marti, Petr Němec, K. W. Edmonds, S. Reimers, O. J. Amin, F. Maccherozzi, S. S. Dhesi, Peter Wadley, Jörg Wunderlich, Kamil Olejník, Tomáš Jungwirth

Abstract: Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, also in analogy to ferromagnets,… ▽ More Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, also in analogy to ferromagnets, the readout magnetoresistivity signals in simple antiferromagnetic films have been weak and the extension of the electrical reorientation mechanism to optics has not been achieved. Here we report reversible and reproducible quenching of an antiferromagnetic CuMnAs film by either electrical or ultrashort optical pulses into nano-fragmented domain states. The resulting resistivity changes approach 20\% at room temperature, which is comparable to the giant magnetoresistance ratios in ferromagnetic multilayers. We also obtain a signal readout by optical reflectivity. The analog time-dependent switching and relaxation characteristics of our devices can mimic functionality of spiking neural network components. △ Less

Submitted 24 June, 2021; v1 submitted 19 September, 2019; originally announced September 2019.

Journal ref: Nat. Electron 4 (2021) 30-37

A community-based transcriptomics classification and nomenclature of neocortical cell types

Authors: Rafael Yuste, Michael Hawrylycz, Nadia Aalling, Detlev Arendt, Ruben Armananzas, Giorgio Ascoli, Concha Bielza, Vahid Bokharaie, Tobias Bergmann, Irina Bystron, Marco Capogna, Yoonjeung Chang, Ann Clemens, Christiaan de Kock, Javier DeFelipe, Sandra Dos Santos, Keagan Dunville, Dirk Feldmeyer, Richard Fiath, Gordon Fishell, Angelica Foggetti, Xuefan Gao, Parviz Ghaderi, Onur Gunturkun, Vanessa Jane Hall , et al. (46 additional authors not shown)

Abstract: To understand the function of cortical circuits it is necessary to classify their underlying cellular diversity. Traditional attempts based on comparing anatomical or physiological features of neurons and glia, while productive, have not resulted in a unified taxonomy of neural cell types. The recent development of single-cell transcriptomics has enabled, for the first time, systematic high-throug… ▽ More To understand the function of cortical circuits it is necessary to classify their underlying cellular diversity. Traditional attempts based on comparing anatomical or physiological features of neurons and glia, while productive, have not resulted in a unified taxonomy of neural cell types. The recent development of single-cell transcriptomics has enabled, for the first time, systematic high-throughput profiling of large numbers of cortical cells and the generation of datasets that hold the promise of being complete, accurate and permanent. Statistical analyses of these data have revealed the existence of clear clusters, many of which correspond to cell types defined by traditional criteria, and which are conserved across cortical areas and species. To capitalize on these innovations and advance the field, we, the Copenhagen Convention Group, propose the community adopts a transcriptome-based taxonomy of the cell types in the adult mammalian neocortex. This core classification should be ontological, hierarchical and use a standardized nomenclature. It should be configured to flexibly incorporate new data from multiple approaches, developmental stages and a growing number of species, enabling improvement and revision of the classification. This community-based strategy could serve as a common foundation for future detailed analysis and reverse engineering of cortical circuits and serve as an example for cell type classification in other parts of the nervous system and other organs. △ Less

Submitted 6 September, 2019; originally announced September 2019.

Comments: 21 pages, 3 figures

Imaging and writing magnetic domains in the non-collinear antiferromagnet Mn$_{\text{3}}$Sn

Authors: Helena Reichlova, Tomas Janda, Joao Godinho, Anastasios Markou, Dominik Kriegner, Richard Schlitz, Jakub Zelezny, Zbynek Soban, Mauricio Bejarano, Helmut Schultheiss, Petr Nemec, Tomas Jungwirth, Claudia Felser, Joerg Wunderlich, Sebastian T. B. Goennenwein

Abstract: Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally obse… ▽ More Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally observed in non-collinear AFMs, and the presence of the equivalent to the ferromagnetic spin transfer torque via spin polarized currents was theoretically predicted. In spite of these developments, an interpretation of the rich physical phenomena observed in non-collinear antiferromagnets is challenging, since the microscopic spin arrangement, the magnetic domain distribution, and the domain orientations have proven notoriously difficult to access experimentally. This is all the more problematic, as imaging and writing magnetic domains is of central importance for applications. Successful imaging is a basic requirement to experimentally confirm the spin transfer torque acting on non-collinear domain walls and therefore of eminent interest. Here, we demonstrate that the local magnetic structure of the non-collinear AFM Mn3Sn films can be imaged by scanning thermal gradient microscopy (STGM). The technique is based on scanning a laser spot over the sample's surface, and recording the ensuing thermo-voltage. We image the magnetic structure at a series of different temperatures and show that at room temperature, the domain structure is not affected by the application of moderate magnetic fields. In addition to imaging, we establish a scheme for heat-assisted magnetic recording, using local laser heating in combination with magnetic fields to intentionally write domain patterns into the antiferromagnet. △ Less

Submitted 31 May, 2019; originally announced May 2019.

Comments: 4 figures

Experimental demonstration of plasmon-soliton waves

Authors: Tintu Kuriakose, Gilles Renversez, Virginie Nazabal, Mahmoud Elsawy, Nathalie Coulon, Petr Nemec, Mathieu Chauvet

Abstract: Controlling low power light beam self-confinement with ultrafast response time opens up opportunities for the development of signal processing in microdevices. The combination of highly nonlinear medium with the tight confinement of plasmonic waves offers a viable but challenging configuration to reach this goal. Here, we report the experimental observation of plasmon-soliton waves propagating in… ▽ More Controlling low power light beam self-confinement with ultrafast response time opens up opportunities for the development of signal processing in microdevices. The combination of highly nonlinear medium with the tight confinement of plasmonic waves offers a viable but challenging configuration to reach this goal. Here, we report the experimental observation of plasmon-soliton waves propagating in a chalcogenide-based four-layer planar geometry engineered to limit plasmon propagation losses while exhibiting efficient Kerr self-focusing at moderate power. The observations reveal a strongly enhanced self-focusing undergone by a self-trapped beam propagating inside the structure. As expected, only TM polarized waves exhibit such a behavior. Different experimental arrangements are tested that unambiguously reveal the nonlinear plasmon-soliton coupling which is corroborated by numerical simulations. △ Less

Submitted 24 June, 2019; v1 submitted 15 November, 2018; originally announced November 2018.

Comments: 33 pages, 14 figures, enhanced and corrected version compared to v1

Voigt effect-based wide-field magneto-optical microscope integrated in a pump-probe experimental setup

Authors: T. Janda, L. Nadvornik, J. Kucharik, D. Butkovicova, E. Schmoranzerova, F. Trojanek, P. Nemec

Abstract: In this work we describe an experimental setup for spatially-resolved pump-probe experiment with integrated wide-field magneto-optical (MO) microscope. The MO microscope can be used to study ferromagnetic materials with both perpendicular-to-plane and in-plane magnetic anisotropy via polar Kerr and Voigt effects, respectively. The functionality of the Voigt effect-based microscope was tested using… ▽ More In this work we describe an experimental setup for spatially-resolved pump-probe experiment with integrated wide-field magneto-optical (MO) microscope. The MO microscope can be used to study ferromagnetic materials with both perpendicular-to-plane and in-plane magnetic anisotropy via polar Kerr and Voigt effects, respectively. The functionality of the Voigt effect-based microscope was tested using an in-plane magnetized ferromagnetic semiconductor (Ga,Mn)As. It was revealed that the presence of mechanical defects in the (Ga,Mn)As epilayer alters significantly the magnetic anisotropy in their proximity. The importance of MO experiments with simultaneous temporal and spatial resolutions was demonstrated using (Ga,Mn)As sample attached to a piezoelectric actuator, which produces a voltage-controlled strain. We observed a considerably different behavior in different parts of the sample that enabled us to identify sample parts where the epilayer magnetic anisotropy was significantly modified by a presence of the piezostressor and where it was not. Finally, we discuss the possible applicability of our experimental setup for the research of compensated antiferromagnets, where only MO effects even in magnetic moments are present. △ Less

Submitted 28 February, 2018; originally announced February 2018.

Comments: 23 pages, 6 figures

THz electrical writing speed in an antiferromagnetic memory

Authors: K. Olejnik, T. Seifert, Z. Kaspar, V. Novak, P. Wadley, R. P. Campion, M. Baumgartner, P. Gambardella, P. Nemec, J. Wunderlich, J. Sinova, M. Muller, T. Kampfrath, T. Jungwirth

Abstract: The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed… ▽ More The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to THz using an antiferromagnet. Efficient current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the twelve orders of magnitude range of writing speeds from Hz to THz. Our work opens the path towards the development of memory-logic technology reaching the elusive THz band. △ Less

Submitted 24 October, 2017; originally announced November 2017.

Fast optical control of spin in semiconductor interfacial structures

Authors: L. Nádvorník, M. Surýnek, K. Olejník, V. Novák, J. Wunderlich, F. Trojánek, T. Jungwirth, P. Němec

Abstract: We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations origi… ▽ More We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations originating from different excitation laser pulses. We demonstrate that the density of spins, which is injected into the system by means of the optical orientation, can be controlled by reducing the electrostatic confinement of the system using an additional generation of photocarriers. It is also shown that the disturbed confinement recovers within hundreds of picoseconds after which spins can be again photo-injected into the system. △ Less

Submitted 30 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. Applied 8, 034022 (2017)

Antiferromagnetic opto-spintronics: Part of a collection of reviews on antiferromagnetic spintronics

Authors: P. Nemec, M. Fiebig, T. Kampfrath, A. V. Kimel

Abstract: Control and detection of spin order in ferromagnets is the main principle allowing storing and reading of magnetic information in nowadays technology. The large class of antiferromagnets, on the other hand, is less utilized, despite its very appealing features for spintronics applications. For instance, the absence of net magnetization and stray fields eliminates crosstalk between neighbouring dev… ▽ More Control and detection of spin order in ferromagnets is the main principle allowing storing and reading of magnetic information in nowadays technology. The large class of antiferromagnets, on the other hand, is less utilized, despite its very appealing features for spintronics applications. For instance, the absence of net magnetization and stray fields eliminates crosstalk between neighbouring devices and the absence of a primary macroscopic magnetization makes spin manipulation in antiferromagnets inherently faster than in ferromagnets. However, control of spins in antiferromagnets requires exceedingly high magnetic fields, and antiferromagnetic order cannot be detected with conventional magnetometry. Here we provide an overview and illustrative examples of how electromagnetic radiation can be used for probing and modification of the magnetic order in antiferromagnets. Spin pum** from antiferromagnets, propagation of terahertz spin excitations, and tracing the reversal of the antiferromagnetic and ferroelectric order parameter in multiferroics are anticipated to be among the main topics defining the future of this field. △ Less

Submitted 6 June, 2017; v1 submitted 30 May, 2017; originally announced May 2017.

Comments: Part of a collection of reviews on antiferromagnetic spintronics; 26 pages, 7 figures

Journal ref: Nature Physics 14, 229 - 241 (2018)

Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films

Authors: P. Wadley, K. W. Edmonds, M. R. Shahedkhah, R. P. Campion, B. L. Gallagher, J. Zelezny, J. Kunes, V. Novak, T. Jungwirth, V. Saidl, P. Nemec, F. Maccherozzi, S. S. Dhesi

Abstract: Using x-ray magnetic circular and linear dichroism techniques, we demonstrate a collinear exchange coupling between an epitaxial antiferromagnet, tetragonal CuMnAs, and an Fe surface layer. A small uncompensated Mn magnetic moment is observed which is antiparallel to the Fe magnetization. The staggered magnetization of the 5nm thick CuMnAs layer is rotatable under small magnetic fields, due to the… ▽ More Using x-ray magnetic circular and linear dichroism techniques, we demonstrate a collinear exchange coupling between an epitaxial antiferromagnet, tetragonal CuMnAs, and an Fe surface layer. A small uncompensated Mn magnetic moment is observed which is antiparallel to the Fe magnetization. The staggered magnetization of the 5nm thick CuMnAs layer is rotatable under small magnetic fields, due to the interlayer exchange coupling. This allows us to obtain the x-ray magnetic linear dichroism spectra for different crystalline orientations of CuMnAs in the (001) plane. △ Less

Submitted 10 February, 2017; originally announced February 2017.

Comments: 10 pages, 3 figures

Nano scale thermo-electrical detection of magnetic domain wall propagation

Authors: Patryk Krzysteczko, James Wells, Alexander Fernandez Scarioni, Zbynek Soban, Tomas Janda, Xiukun Hu, Vit Saidl, Richard P. Campion, Rhodri Mansell, Ji-Hyun Lee, Russell P. Cowburn, Petr Nemec, Olga Kazakova, Joerg Wunderlich, Hans Werner Schumacher

Abstract: In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DW) are narrow and can move rapidly driven by current induced torques. This enables important applications like high-density memories for which the precise detection of the position and motion of a propagating DW is of utmost interest. Today's DW detection tools are often limited in resolution, or acquisition… ▽ More In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DW) are narrow and can move rapidly driven by current induced torques. This enables important applications like high-density memories for which the precise detection of the position and motion of a propagating DW is of utmost interest. Today's DW detection tools are often limited in resolution, or acquisition speed, or can only be applied on specific materials. Here, we show that the anomalous Nernst effect provides a simple and powerful tool to precisely track the position and motion of a single DW propagating in a PMA nanowire. We detect field and current driven DW propagation in both metallic heterostructures and dilute magnetic semiconductors over a broad temperature range. The demonstrated spatial resolution below 20 nm is comparable to the DW width in typical metallic PMA systems. △ Less

Submitted 23 November, 2016; originally announced November 2016.

Comments: 26 pages including supplementary information

Journal ref: Phys. Rev. B 95, 220410 (2017)

Optical determination of the Neel vector in a CuMnAs thin-film antiferromagnet

Authors: V. Saidl, P. Nemec, P. Wadley, V. Hills, R. P. Campion, V. Novak, K. W. Edmonds, F. Maccherozzi, S. S. Dhesi, B. L. Gallagher, F. Trojanek, J. Kunes, J. Zelezny, P. Maly, T. Jungwirth

Abstract: Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultra-fast spin dynamics and other favorable characteristics which may find u… ▽ More Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultra-fast spin dynamics and other favorable characteristics which may find utility in fields ranging from magnetic memories to optical signal processing. However, the absence of a net magnetic moment and the ultra-short magnetization dynamics timescales make antiferromagnets notoriously difficult to study by common magnetometers or magnetic resonance techniques. In this paper we demonstrate the experimental determination of the Neel vector in a thin film of antiferromagnetic CuMnAs which is the prominent material used in the first realization of antiferromagnetic memory chips. We employ a femtosecond pump-probe magneto-optical experiment based on magnetic linear dichroism. This table-top optical method is considerably more accessible than the traditionally employed large scale facility techniques like neutron diffraction and X-ray magnetic dichroism measurements. This optical technique allows an unambiguous direct determination of the Neel vector orientation in thin antiferromagnetic films utilized in devices directly from measured data without fitting to a theoretical model. △ Less

Submitted 5 August, 2016; originally announced August 2016.

Comments: 10 pages, 4 figures

Journal ref: Nature Photonics 11, 91-97 (2017)

Inertial displacement of a domain wall excited by ultra-short circularly polarized laser pulses

Authors: T. Janda, P. E. Roy, R. M. Otxoa, Z. Soban, A. Ramsay, A. C. Irvine, F. Trojanek, R. P. Campion, B. L. Gallagher, P. Nemec, T. Jungwirth, J. Wunderlich

Abstract: Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high speed and long distance transmission of information encoded in circularly polarized light. Here we demonstrate the conversion of the circular polarization of incident femtosecond laser pulses into inertial displacement… ▽ More Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high speed and long distance transmission of information encoded in circularly polarized light. Here we demonstrate the conversion of the circular polarization of incident femtosecond laser pulses into inertial displacement of a domain wall in a ferromagnetic semiconductor. In our study we combine electrical measurements and magneto-optical imaging of the domain wall displacement with micromagnetic simulations. The optical spin transfer torque acts over a picosecond recombination time of the spin polarized photo-carriers which only leads to a deformation of the internal domain wall structure. We show that subsequent depinning and micro-meter distance displacement without an applied magnetic field or any other external stimuli can only occur due to the inertia of the domain wall. △ Less

Submitted 16 June, 2016; originally announced June 2016.

Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction

Authors: L. Nádvorník, K. Olejník, P. Němec, V. Novák, T. Janda, J. Wunderlich, F. Trojánek, T. Jungwirth

Abstract: We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude… ▽ More We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly non-linear in the pn-bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the non-linear change in the carrier density at the Hall cross with the pn-bias. △ Less

Submitted 13 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 94, 075306 (2016)

Nanosecond spin-transfer over tens of microns in a bare GaAs/AlGaAs layer

Authors: L. Nádvorník, P. Němec, T. Janda, K. Olejník, V. Novák, V. Skoromets, H. Němec, P. Kužel, F. Trojánek, T. Jungwirth, J. Wunderlich

Abstract: The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and t… ▽ More The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and the time-scale at which spin-information is transferred from the injector to the detector. Using this technique, we demonstrate that in an undoped GaAs/AlGaAs layer spins are detected at distances reaching more than ten microns from the injection point at times as short as nanoseconds after the pump-pulse. The observed unique combination of the long-range and highrate electronic spin-transport requires simultaneous suppression of mechanisms limiting the spin life-time and mobility of carriers. Unlike earlier attempts focusing on elaborate do**, gating, or heterostructures we demonstrate that the bare GaAs/AlGaAs layer intrinsically provides superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex heterostructures. △ Less

Submitted 7 October, 2015; originally announced October 2015.

Journal ref: Sci. Rep. 6, 22901 (2016)

Optical investigation of magneto-structural phase transition in FeRh

Authors: V. Saidl, M. Brajer, L. Horak, H. Reichlova, K. Vyborny, M. Veis, T. Janda, F. Trojanek, I. Fina, X. Marti, T. Jungwirth, P. Nemec

Abstract: Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large change of the optical response in the visible and near infrared spectral ranges. This phenomenon was used to measure the phase transition temperature in F… ▽ More Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large change of the optical response in the visible and near infrared spectral ranges. This phenomenon was used to measure the phase transition temperature in FeRh films with thicknesses from 6 to 100 nm and it was observed that the hysteretic transition region broadens significantly in the thinner films. △ Less

Submitted 24 August, 2015; originally announced August 2015.

Comments: 7 pages, 4 figures

Journal ref: New J. Phys. 18, 083017 (2016)

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

Authors: D. Kriegner, K. Vyborny, K. Olejnik, H. Reichlova, V. Novak, X. Marti, J. Gazquez, V. Saidl, P. Nemec, V. V. Volobuev, G. Springholz, V. Holy, T. Jungwirth

Abstract: A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative to ferromagnets. So far, experimental research has focused on bistable memories in antiferromagnetic metals. In the present work we demonstrate a mul… ▽ More A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative to ferromagnets. So far, experimental research has focused on bistable memories in antiferromagnetic metals. In the present work we demonstrate a multiple-stable memory device in epitaxial manganese telluride (MnTe) which is an antiferromagnetic counterpart of common II-VI semiconductors. Favorable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the applied magnetic field, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states which we set by heat-assisted magneto-recording and by changing the angle of the writing field. We explore the dependence of the magnitude of the zero-field read-out signal on the strength of the writing field and demonstrate the robustness of the antiferromagnetic memory states against strong magnetic field perturbations. We ascribe the multiple-stability in our antiferromagnetic memory to different distributions of domains with the Néel vector aligned along one of the three $c$-plane magnetic easy axes in the hexagonal MnTe film. The domain redistribution is controlled during the heat-assisted recording by the strength and angle of the writing field and freezes when sufficiently below the Néel temperature. △ Less

Submitted 20 August, 2015; originally announced August 2015.

Journal ref: Nature Communications 7,11623 (2016)

Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As

Authors: N. Tesarova, D. Butkovicova, R. P. Campion, A. W. Rushforth, K. W. Edmonds, P. Wadley, B. L. Gallagher, E. Schmoranzerova, F. Trojanek, P. Maly, P. Motloch, V. Novak, T. Jungwirth, P. Nemec

Abstract: We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis o… ▽ More We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data we determined the magnetic anisotropy fields, the spin stiffness and the Gilbert dam** constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular to plane anisotropy field but also to an increase of the Gilbert dam** and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material. We report that the magnetization precession dam** is stronger for the n = 1 spin wave resonance mode than for the n = 0 uniform magnetization precession mode. △ Less

Submitted 19 May, 2014; originally announced May 2014.

Comments: 19 pages, 8 figures

Journal ref: Phys. Rev. B 90, 155203 (2014)

Spin-dependent phenomena and device concepts explored in (Ga,Mn)As

Authors: T. Jungwirth, J. Wunderlich, V. Novak, K. Olejnik, B. L. Gallagher, R. P. Campion, K. W. Edmonds, A. W. Rushforth, A. J. Ferguson, P. Nemec

Abstract: Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that… ▽ More Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that make (Ga,Mn)As a favorable test-bed system for spintronics research and discuss contributions of (Ga,Mn)As studies in the general context of the spin-dependent phenomena and device concepts. Special focus is on the spin-orbit coupling induced effects and the reviewed topics include the interaction of spin with electrical current, light, and heat. △ Less

Submitted 14 July, 2014; v1 submitted 7 October, 2013; originally announced October 2013.

Comments: 47 pages, 41 figures

Journal ref: Rev. Mod. Phys. 86, 855 (2014)

Critical role of the sample preparation in experiments using piezoelectric actuators inducing uniaxial or biaxial strains

Authors: D. Butkovicova, X. Marti, V. Saidl, E. Schmoranzerova-Rozkotova, P. Wadley, V. Holy, P. Nemec

Abstract: We report on a systematic study of the stress transferred from an electromechanical piezo-stack into GaAs wafers under a wide variety of experimental conditions. We show that the strains in the semiconductor lattice, which were monitored in situ by means of X-ray diffraction, are strongly dependent on both the wafer thickness and on the selection of the glue which is used to bond the wafer to the… ▽ More We report on a systematic study of the stress transferred from an electromechanical piezo-stack into GaAs wafers under a wide variety of experimental conditions. We show that the strains in the semiconductor lattice, which were monitored in situ by means of X-ray diffraction, are strongly dependent on both the wafer thickness and on the selection of the glue which is used to bond the wafer to the piezoelectric actuator. We have identified an optimal set of parameters that reproducibly transfers the largest distortions at room temperature. We have studied strains produced not only by the frequently used uniaxial piezostressors but also by the biaxial ones which replicate the routinely performed experiments using substrate-induced strains but with the advantage of a continuously tunable lattice distortion. The time evolution of the strain response and the sample tilting and/or bending are also analyzed and discussed. △ Less

Submitted 4 September, 2013; originally announced September 2013.

Comments: 8 pages, 4 figures

Journal ref: Rev. Sci. Instr. 84, 103902 (2013)

Systematic study of magnetic linear dichroism and birefringence in (Ga,Mn)As

Authors: N. Tesarova, T. Ostatnicky, V. Novak, K. Olejnik, J. Subrt, C. T. Ellis, A. Mukherjee, J. Lee, G. M. Sipahi, J. Sinova, J. Hamrle, T. Jungwirth, P. Nemec, J. Cerne, K. Vyborny

Abstract: Magnetic linear dichroism and birefringence in (Ga,Mn)As epitaxial layers is investigated by measuring the polarization plane rotation of reflected linearly polarized light when magnetization lies in the plane of the sample. We report on the spectral dependence of the rotation and ellipticity angles in a broad energy range of 0.12-2.7 eV for a series of optimized samples covering a wide range on M… ▽ More Magnetic linear dichroism and birefringence in (Ga,Mn)As epitaxial layers is investigated by measuring the polarization plane rotation of reflected linearly polarized light when magnetization lies in the plane of the sample. We report on the spectral dependence of the rotation and ellipticity angles in a broad energy range of 0.12-2.7 eV for a series of optimized samples covering a wide range on Mn-do**s and Curie temperatures and find a clear blue shift of the dominant peak at energy exceeding the host material band gap. These results are discussed in the general context of the GaAs host band structure and also within the framework of the k.p and mean-field kinetic-exchange model of the (Ga,Mn)As band structure. We find a semi-quantitative agreement between experiment and theory and discuss the role of disorder-induced non-direct transitions on magneto-optical properties of (Ga,Mn)As. △ Less

Submitted 27 August, 2013; originally announced August 2013.

Comments: 18 pages

Influence of Magnetic Anisotropy on Laser-induced Precession of Magnetization in Ferromagnetic Semiconductor (Ga,Mn)As

Authors: N. Tesarova, E. Rozkotova, H. Reichlova, P. Maly, V. Novak, M. Cukr, T. Jungwirth, P. Nemec

Abstract: The laser-induced precession of magnetization in (Ga,Mn)As samples with different magnetic anisotropy was studied by the time-resolved magneto-optical method. We observed that the dependence of the precession amplitude on the external magnetic field depends strongly on the magnetic anisotropy of (Ga,Mn)As and we explain this phenomenon in terms of competing cubic and uniaxial anisotropies. We also… ▽ More The laser-induced precession of magnetization in (Ga,Mn)As samples with different magnetic anisotropy was studied by the time-resolved magneto-optical method. We observed that the dependence of the precession amplitude on the external magnetic field depends strongly on the magnetic anisotropy of (Ga,Mn)As and we explain this phenomenon in terms of competing cubic and uniaxial anisotropies. We also show that the corresponding anisotropy fields can be deduced from the magnetic field dependence of the precession frequency. △ Less

Submitted 5 December, 2012; originally announced December 2012.

Comments: 7 pages, 4 figures

Journal ref: J. Nanosc. Nanotechnol 12, 7477-7481 (2012)

High Precision Magnetic Linear Dichroism Measurements in (Ga,Mn)As

Authors: N. Tesarova, J. Subrt, P. Maly, P. Nemec, C. T. Ellis, A. Mukherjee, J. Cerne

Abstract: Investigation of magnetic materials using the first-order magneto-optical Kerr effects (MOKE) is well established and is frequently used in the literature. On the other hand, the utilization of the second-order (or quadratic) magneto-optical (MO) effects for the material research is rather rare. This is due to the small magnitude of quadratic MO signals and the fact that the signals are even in ma… ▽ More Investigation of magnetic materials using the first-order magneto-optical Kerr effects (MOKE) is well established and is frequently used in the literature. On the other hand, the utilization of the second-order (or quadratic) magneto-optical (MO) effects for the material research is rather rare. This is due to the small magnitude of quadratic MO signals and the fact that the signals are even in magnetization (i.e., they do not change a sign when the magnetization orientation is flipped), which makes it difficult to separate second-order MO signals from various experimental artifacts. In 2005 a giant quadratic MO effect - magnetic linear dichroism (MLD) - was observed in the ferromagnetic semiconductor (Ga,Mn)As. This discovery not only provided a new experimental tool for the investigation of in-plane magnetization dynamics in (Ga,Mn)As using light at normal incidence, but it also motivated the development of experimental techniques for the measurement of second-order MO effects in general. In this paper we compare four different experimental techniques that can be used to measure MLD and to separate it from experimental artifacts. We show that the most reliable results are obtained when the harmonic dependence of MLD on a mutual orientation of magnetization and light polarization plane is used together with the in-situ rotation of the sample followed by the magnetic field-induced rotation of magnetization. Using this technique we measure the MLD spectra of (Ga,Mn)As in a broad spectral range from 0.1 eV to 2.7 eV and we observe that MLD has a comparable magnitude as polar MOKE signals in this material. △ Less

Submitted 5 December, 2012; originally announced December 2012.

Comments: 17 pages, 7 figures

Journal ref: Rev. Sci. Instrum. 83, 123108 (2012)

Establishing micromagnetic parameters of ferromagnetic semiconductor (Ga,Mn)As

Authors: P. Nemec, V. Novak, N. Tesarova, E. Rozkotova, H. Reichlova, D. Butkovicova, F. Trojanek, K. Olejnik, P. Maly, R. P. Campion, B. L. Gallagher, Jairo Sinova, T. Jungwirth

Abstract: (Ga,Mn)As is at the forefront of research exploring the synergy of magnetism with the physics and technology of semiconductors, and has led to discoveries of new spin-dependent phenomena and functionalities applicable to a wide range of material systems. Its recognition and utility as an ideal model material for spintronics research has been undermined by the large scatter in reported semiconducti… ▽ More (Ga,Mn)As is at the forefront of research exploring the synergy of magnetism with the physics and technology of semiconductors, and has led to discoveries of new spin-dependent phenomena and functionalities applicable to a wide range of material systems. Its recognition and utility as an ideal model material for spintronics research has been undermined by the large scatter in reported semiconducting do** trends and micromagnetic parameters. In this paper we establish these basic material characteristics by individually optimizing the highly non-equilibrium synthesis for each Mn-do** level and by simultaneously determining all micromagnetic parameters from one set of magneto-optical pump-and-probe measurements. Our (Ga,Mn)As thin-film epilayers, spannig the wide range of accessible do**s, have sharp thermodynamic Curie point singularities typical of uniform magnetic systems. The materials show systematic trends of increasing magnetization, carrier density, and Curie temperature (reaching 188 K) with increasing do**, and monotonous do** dependence of the Gilbert dam** constant of ~0.1-0.01 and the spin stiffness of ~2-3 meVnm^2. These results render (Ga,Mn)As well controlled degenerate semiconductor with basic magnetic characteristics comparable to common band ferromagnets. △ Less

Submitted 2 July, 2012; originally announced July 2012.

Comments: 5 figures, supplementary information

Experimental observation of the optical spin-orbit torque

Authors: N. Tesarova, P. Nemec, E. Rozkotova, J. Zemen, F. Trojanek, K. Olejnik, V. Novak, P. Maly, T. Jungwirth

Abstract: Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the area of spintronics research focusing on manipulating magnetic moments by electric fields and is the basis of the emerging technologies for scalable magnetoresistive random access memories. In our previous work we have r… ▽ More Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the area of spintronics research focusing on manipulating magnetic moments by electric fields and is the basis of the emerging technologies for scalable magnetoresistive random access memories. In our previous work we have reported experimental observation of the optical counterpart of STT in which a circularly polarized pump laser pulse acts as the external polarizer, allowing to study and utilize the phenomenon on several orders of magnitude shorter timescales than in the electric current induced STT. Recently it has been theoretically proposed and experimentally demonstrated that in the absence of an external polarizer, carriers in a magnet under applied electric field can develop a non-equilibrium spin polarization due to the relativistic spin-orbit coupling, resulting in a current induced spin-orbit torque (SOT) acting on the magnetization. In this paper we report the observation of the optical counterpart of SOT. At picosecond time-scales, we detect excitations of magnetization of a ferromagnetic semiconductor (Ga,Mn)As which are independent of the polarization of the pump laser pulses and are induced by non-equilibrium spin-orbit coupled photo-holes. △ Less

Submitted 2 July, 2012; originally announced July 2012.

Comments: 4 figure, supplementary information. arXiv admin note: text overlap with arXiv:1101.1049

Investigation of Optical Spin Transfer Torque in Ferromagnetic Semiconductor GaMnAs by Magneto-Optical Pump-and-Probe Method

Authors: Eva Rozkotova, Petr Nemec, Nada Tesarova, Frantisek Trojanek, Petr Maly, Vit Novak, Tomas Jungwirth

Abstract: We report on magnetization precession induced in (Ga,Mn)As by an optical spin transfer torque (OSTT). This phenomenon, which corresponds to a transfer of angular momentum from optically-injected spin-polarized electrons to magnetization, was predicted theoretically in 2004 and observed experimentally by our group in 2012. In this paper we provide experimental details about the observation of OSTT… ▽ More We report on magnetization precession induced in (Ga,Mn)As by an optical spin transfer torque (OSTT). This phenomenon, which corresponds to a transfer of angular momentum from optically-injected spin-polarized electrons to magnetization, was predicted theoretically in 2004 and observed experimentally by our group in 2012. In this paper we provide experimental details about the observation of OSTT by a time-resolved pump-and-probe magneto-optical technique. In particular, we show that the precession of magnetization due to OSTT can be experimentally separated from that induced by the well known magnetic-anisotropy-related mechanism in a hybrid structure piezo-stressor/(Ga,Mn)As with an in situ electrical control of the magnetic anisotropy. We also illustrate that OSTT is clearly apparent in the measured dynamical magneto-optical signal in a large variety of (Ga,Mn)As samples with a Mn concentration from 3% to 9%. △ Less

Submitted 2 March, 2012; originally announced March 2012.

Comments: 4 pages, 5 figures

Experimental observation of the optical spin transfer torque

Authors: P. Nemec, E. Rozkotova, N. Tesarova, F. Trojanek, E. De Ranieri, K. Olejnik, J. Zemen, V. Novak, M. Cukr, P. Maly, T. Jungwirth

Abstract: The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has opened a new research field of electrically driven magnetization dynamics in magnetic nanostructures and plays an important role in the development of a new generation of memory devices and tunable oscillators. Optical… ▽ More The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has opened a new research field of electrically driven magnetization dynamics in magnetic nanostructures and plays an important role in the development of a new generation of memory devices and tunable oscillators. Optical excitations of magnetic systems by laser pulses have been a separate research field whose aim is to explore magnetization dynamics at short time scales and enable ultrafast spintronic devices. We report the experimental observation of the optical spin transfer torque, predicted theoretically several years ago building the bridge between these two fields of spintronics research. In a pump-and-probe optical experiment we measure coherent spin precession in a (Ga,Mn)As ferromagnetic semiconductor excited by circularly polarized laser pulses. During the pump pulse, the spin angular momentum of photo-carriers generated by the absorbed light is transferred to the collective magnetization of the ferromagnet. We interpret the observed optical spin transfer torque and the magnetization precession it triggers on a quantitative microscopic level. Bringing the spin transfer physics into optics introduces a fundamentally distinct mechanism from the previously reported thermal and non-thermal laser excitations of magnets. Bringing optics into the field of spin transfer torques decreases by several orders of magnitude the timescales at which these phenomena are explored and utilized. △ Less

Submitted 6 January, 2012; originally announced January 2012.

Comments: 11 pages, 4 figures

Journal ref: Nature Physics 8, 411-415 (2012)

Direct measurement of the three dimensional magnetization vector trajectory in GaMnAs by a magneto-optical pump-and-probe method

Authors: N. Tesarova, P. Nemec, E. Rozkotova, J. Subrt, H. Reichlova, D. Butkovicova, F. Trojanek, P. Maly, V. Novak, T. Jungwirth

Abstract: We report on a quantitative experimental determination of the three-dimensional magnetization vector trajectory in GaMnAs by means of the static and time-resolved pump-and-probe magneto-optical measurements. The experiments are performed in a normal incidence geometry and the time evolution of the magnetization vector is obtained without any numerical modeling of magnetization dynamics. Our experi… ▽ More We report on a quantitative experimental determination of the three-dimensional magnetization vector trajectory in GaMnAs by means of the static and time-resolved pump-and-probe magneto-optical measurements. The experiments are performed in a normal incidence geometry and the time evolution of the magnetization vector is obtained without any numerical modeling of magnetization dynamics. Our experimental method utilizes different polarization dependences of the polar Kerr effect and magnetic linear dichroism to disentangle the pump-induced out-of-plane and in-plane motions of magnetization, respectively. We demonstrate that the method is sensitive enough to allow for the determination of small angle excitations of the magnetization in GaMnAs. The method is readily applicable to other magnetic materials with sufficiently strong circular and linear magneto-optical effects. △ Less

Submitted 5 January, 2012; originally announced January 2012.

Comments: main paper: 7 pages, 3 figures; supplementary information: 11 pages, 6 figures

Journal ref: Appl. Phys. Lett. 100, 102403 (2012)

Non-thermal laser induced precession of magnetization in ferromagnetic semiconductor (Ga,Mn)As

Authors: P. Nemec, E. Rozkotova, N. Tesarova, F. Trojanek, K. Olejnik, J. Zemen, V. Novak, M. Cukr, P. Maly, T. Jungwirth

Abstract: Non-thermal laser induced spin excitations, recently discovered in conventional oxide and metal ferromagnets, open unprecedented opportunities for research and applications of ultrafast optical manipulation of magnetic systems. Ferromagnetic semiconductors, and (Ga,Mn)As in particular, should represent ideal systems for exploring this new field. Remarkably, the presence of non-thermal effects has… ▽ More Non-thermal laser induced spin excitations, recently discovered in conventional oxide and metal ferromagnets, open unprecedented opportunities for research and applications of ultrafast optical manipulation of magnetic systems. Ferromagnetic semiconductors, and (Ga,Mn)As in particular, should represent ideal systems for exploring this new field. Remarkably, the presence of non-thermal effects has remained one of the outstanding unresolved problems in the research of ferromagnetic semiconductors to date. Here we demonstrate that coherent magnetization dynamics can be excited in (Ga,Mn)As non-thermally by a transfer of angular momentum from circularly polarized femtosecond laser pulses and by a combination of non-thermal and thermal effects due to a transfer of energy from laser pulses. The thermal effects can be completely suppressed in piezo-electrically controlled samples. Our work is based on pump-and-probe measurements in a large set of (Ga,Mn)As epilayers and on systematic analysis of circular and linear magneto-optical coefficients. We provide microscopic theoretical interpretation of the experimental results. △ Less

Submitted 5 January, 2011; originally announced January 2011.

Comments: 14 pages, 4 figures, plus supplementary material

Molecular Beam Epitaxy of LiMnAs

Authors: V. Novak, M. Cukr, Z. Soban, T. Jungwirth, X. Marti, V. Holy, P. Horodyska, P. Nemec

Abstract: We report on the molecular beam epitaxy (MBE) growth of high crystalline quality LiMnAs. The introduction of a group-I alkali metal element Li with flux comparable to fluxes of Mn and As has not caused any apparent damage to the MBE system after as many as fifteen growth cycles performed on the system to date. We report on the molecular beam epitaxy (MBE) growth of high crystalline quality LiMnAs. The introduction of a group-I alkali metal element Li with flux comparable to fluxes of Mn and As has not caused any apparent damage to the MBE system after as many as fifteen growth cycles performed on the system to date. △ Less

Submitted 3 September, 2010; originally announced September 2010.

Comments: 8 pages, 5 figures

Spin Hall effect transistor

Authors: J. Wunderlich, B. G. Park, A. C. Irvine, L. P. Zarbo, E. Rozkotova, P. Nemec, V. Novak, Jairo Sinova, T. Jungwirth

Abstract: Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transis… ▽ More Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transistor concept and demonstrates the utility of the spin Hall effects in microelectronics. The devices use diffusive transport and operate without electrical current, i.e., without Joule heating in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our experimental study is complemented by numerical Monte Carlo simulations of spin-diffusion through the transistor channel. △ Less

Submitted 17 August, 2010; originally announced August 2010.

Comments: 11 pages, 3 figures

Systematic study of Mn-do** trends in optical properties of (Ga,Mn)As

Authors: T. Jungwirth, P. Horodyska, N. Tesarova, P. Nemec, J. Subrt, P. Maly, P. Kuzel, C. Kadlec, J. Masek, I. Nemec, V. Novak, K. Olejnik, Z. Soban, P. Vasek, P. Svoboda, Jairo Sinova

Abstract: We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional Mn_Ga do**s. The growth and post-growth annealing procedures were optimized for each nominal Mn do** in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the mid-infrared absorption… ▽ More We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional Mn_Ga do**s. The growth and post-growth annealing procedures were optimized for each nominal Mn do** in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the mid-infrared absorption spectra whose position exhibits a prevailing blue-shift for increasing Mn-do**. In the visible range, a peak in the magnetic circular dichroism blue shifts with increasing Mn-do**. These observed trends confirm that disorder-broadened valence band states provide a better one-particle representation for the electronic structure of high-doped (Ga,Mn)As with metallic conduction than an energy spectrum assuming the Fermi level pinned in a narrow impurity band. △ Less

Submitted 27 July, 2010; originally announced July 2010.

Comments: 22 pages, 14 figures

Antiferromagnetic I-Mn-V semiconductors

Authors: T. Jungwirth, V. Novak, X. Marti, M. Cukr, F. Maca, A. B. Shick, J. Masek, P. Horodyska, P. Nemec, V. Holy, J. Zemek, P. Kuzel, I. Nemec, B. L. Gallagher, R. P. Campion, C. T. Foxon, J. Wunderlich

Abstract: After decades of research, the low Curie temperature of ferromagnetic semiconductors remains the key problem in the development of magnetic semiconductor spintronic technologies. Removing this roadblock might require a change of the field's basic materials paradigm by looking beyond ferromagnets. Recent studies of relativistic magnetic and magnetotransport anisotropy effects, which in principle ar… ▽ More After decades of research, the low Curie temperature of ferromagnetic semiconductors remains the key problem in the development of magnetic semiconductor spintronic technologies. Removing this roadblock might require a change of the field's basic materials paradigm by looking beyond ferromagnets. Recent studies of relativistic magnetic and magnetotransport anisotropy effects, which in principle are equally well present in materials with ferromagnetically and antiferromagnetically ordered spins, have inspired our search for antiferromagnetic semiconductors suitable for high-temperature spintronics. Since these are not found among the magnetic counterparts of common III-V or II-VI semi- conductors, we turn the attention in this paper to high N éel temperature I-II-V magnetic compounds whose electronic structure has not been previously identified. Our combined experimental and theoretical work on LiMnAs provides basic prerequisite for the systematic research of this class of materials by demonstrating the feasibility to grow single crystals of group-I alkali metal compounds by molecular beam epitaxy, by demonstrating the semiconducting band structure of the I-Mn-V's, and by analyzing their spin-orbit coupling characteristics favorable for spintronics. △ Less

Submitted 1 July, 2010; originally announced July 2010.

Comments: 11 pages, 5 figures

Exciton spin dynamics in spherical CdS quantum dots

Authors: P. Horodyska, P. Nemec, D. Sprinzl, P. Maly, V. N. Gladilin, J. T. Devreese

Abstract: Exciton spin dynamics in quasi-spherical CdS quantum dots is studied in detail experimentally and theoretically. Exciton states are calculated using the 6-band k.p Hamiltonian. It is shown that for various sets of Luttinger parameters, when the wurtzite lattice crystal field splitting and Coulomb interaction between the electron-hole pair are taken into account exactly, both the electron and hol… ▽ More Exciton spin dynamics in quasi-spherical CdS quantum dots is studied in detail experimentally and theoretically. Exciton states are calculated using the 6-band k.p Hamiltonian. It is shown that for various sets of Luttinger parameters, when the wurtzite lattice crystal field splitting and Coulomb interaction between the electron-hole pair are taken into account exactly, both the electron and hole wavefunction in the lowest exciton state are of S-type. This rules out the spatial-symmetry-induced origin of the dark exciton in CdS quantum dots. The exciton bleaching dynamics is studied using time- and polarization-resolved transient absorption technique of ultrafast laser spectroscopy. Several samples with a different mean size of CdS quantum dots in different glass matrices were investigated. This enabled the separation of effects that are typical for one particular sample from those that are general for this type of material. The experimentally determined dependence of the electron spin relaxation rate on the radius of quantum dots agrees well with that computed theoretically. △ Less

Submitted 8 January, 2010; originally announced January 2010.

Comments: 24 pages, 10 figures

Journal ref: Phys. Rev. B 81, 045301 (2010).

Systematic investigation of influence of n-type do** on electron spin dephasing in CdTe

Authors: D. Sprinzl, P. Horodyska, E. Belas, R. Grill, P. Maly, P. Nemec

Abstract: We used time-resolved Kerr rotation technique to study the electron spin coherence in a comprehensive set of bulk CdTe samples with various concentrations of electrons that were supplied by n-type do**. The electron spin coherence time of 40 ps was observed at temperature of 7 K in p-type CdTe and in n-type CdTe with a low concentration of electrons. The increase of the concentration of electron… ▽ More We used time-resolved Kerr rotation technique to study the electron spin coherence in a comprehensive set of bulk CdTe samples with various concentrations of electrons that were supplied by n-type do**. The electron spin coherence time of 40 ps was observed at temperature of 7 K in p-type CdTe and in n-type CdTe with a low concentration of electrons. The increase of the concentration of electrons leads to a substantial prolongation of the spin coherence time, which can be as long as 2.5 ns at 7 K in optimally doped samples, and to a modification of the g factor of electrons. The influence of the concentration of electrons is the most pronounced at low temperatures but it has a sizable effect also at room temperature. The optimal concentration of electrons to achieve the longest spin coherence time is 17-times higher in CdTe than in GaAs and the maximal low-temperature value of the spin coherence time in CdTe is 70 times shorter than the corresponding value in GaAs. Our data can help in cross-checking the predictions of various theoretical models that were suggested in literature as an explanation of the observed non-monotonous do** dependence of the electron spin coherence time in GaAs. △ Less

Submitted 16 September, 2010; v1 submitted 6 January, 2010; originally announced January 2010.

Comments: 8 pages, 2 figures; accepted in Phys. Rev. B

Coherent control of magnetization precession in ferromagnetic semiconductor (Ga,Mn)As

Authors: E. Rozkotova, P. Nemec, N. Tesarova, P. Maly, V. Novak, K. Olejnik, M. Cukr, T. Jungwirth

Abstract: We report single-color, time resolved magneto-optical measurements in ferromagnetic semiconductor (Ga,Mn)As. We demonstrate coherent optical control of the magnetization precession by applying two successive ultrashort laser pulses. The magnetic field and temperature dependent experiments reveal the collective Mn-moment nature of the oscillatory part of the time-dependent Kerr rotation, as well… ▽ More We report single-color, time resolved magneto-optical measurements in ferromagnetic semiconductor (Ga,Mn)As. We demonstrate coherent optical control of the magnetization precession by applying two successive ultrashort laser pulses. The magnetic field and temperature dependent experiments reveal the collective Mn-moment nature of the oscillatory part of the time-dependent Kerr rotation, as well as contributions to the magneto-optical signal that are not connected with the magnetization dynamics. △ Less

Submitted 2 December, 2008; v1 submitted 27 August, 2008; originally announced August 2008.

Comments: 6 pages, 3 figures, accepted in Applied Physics Letters

Journal ref: Applied Physics Letters 93, 232505 (2008).

Laser-induced Precession of Magnetization in GaMnAs

Authors: E. Rozkotova, P. Nemec, D. Sprinzl, P. Horodyska, F. Trojanek, P. Maly, V. Novak, K. Olejnik, M. Cukr, T. Jungwirth

Abstract: We report on the photo-induced precession of the ferromagnetically coupled Mn spins in (Ga,Mn)As, which is observed even with no external magnetic field applied. We concentrate on various experimental aspects of the time-resolved magneto-optical Kerr effect (TR-MOKE) technique that can be used to clarify the origin of the detected signals. We show that the measured data typically consist of seve… ▽ More We report on the photo-induced precession of the ferromagnetically coupled Mn spins in (Ga,Mn)As, which is observed even with no external magnetic field applied. We concentrate on various experimental aspects of the time-resolved magneto-optical Kerr effect (TR-MOKE) technique that can be used to clarify the origin of the detected signals. We show that the measured data typically consist of several different contributions, among which only the oscillatory signal is directly connected with the ferromagnetic order in the sample. △ Less

Submitted 3 March, 2008; originally announced March 2008.

Comments: 4 pages, 5 figures

Journal ref: IEEE Transactions on Magnetics 44, 2674-2677 (2008).

Light-induced magnetization precession in GaMnAs

Authors: E. Rozkotova, P. Nemec, P. Horodyska, D. Sprinzl, F. Trojanek, P. Maly, V. Novak, K. Olejnik, M. Cukr, T. Jungwirth

Abstract: We report dynamics of the transient polar Kerr rotation (KR) and of the transient reflectivity induced by femtosecond laser pulses in ferromagnetic (Ga,Mn)As with no external magnetic field applied. It is shown that the measured KR signal consist of several different contributions, among which only the oscillatory signal is directly connected with the ferromagnetic order in (Ga,Mn)As. The origin… ▽ More We report dynamics of the transient polar Kerr rotation (KR) and of the transient reflectivity induced by femtosecond laser pulses in ferromagnetic (Ga,Mn)As with no external magnetic field applied. It is shown that the measured KR signal consist of several different contributions, among which only the oscillatory signal is directly connected with the ferromagnetic order in (Ga,Mn)As. The origin of the light-induced magnetization precession is discussed and the magnetization precession dam** (Gilbert dam**) is found to be strongly influenced by annealing of the sample. △ Less

Submitted 10 March, 2008; v1 submitted 14 February, 2008; originally announced February 2008.

Comments: 6 pages, 4 figures. accepted in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 92, 122507 (2008)