Showing 1–1 of 1 results for author: Nützel, J
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Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure
Authors:
A. Wild,
J. Sailer,
J. Nützel,
G. Abstreiter,
S. Ludwig,
D. Bougeard
Abstract:
We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific for silicon-based heterostructures and the effect of a comparably large effective electron mass on t…
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We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific for silicon-based heterostructures and the effect of a comparably large effective electron mass on transport properties and tunability of the double QD. Charge noise, which might be intrinsically induced due to strain-engineering is proven not to affect the stable operation of our device as a spin qubit. Our results promise the suitability of electrostatically defined QDs in Si/SiGe heterostructures for quantum information processing.
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Submitted 14 July, 2010;
originally announced July 2010.
