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Showing 1–5 of 5 results for author: Murzakhanov, F F

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  1. arXiv:2404.06933  [pdf

    cond-mat.mtrl-sci

    14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study

    Authors: F. F. Murzakhanov, M. A. Sadovnikova, G. V. Mamin, S. S. Nagalyuk, H. J. von Bardeleben, W. G. Schmidt, T. Biktagirov, U. Gerstmann, V. A. Soltamov

    Abstract: The nitrogen-vacancy (NV) centers (NCVSi) - in 4H silicon carbide (SiC) constitute an ensemble of spin S = 1 solid state qubits interacting with the surrounding 14N and 29Si nuclei. As quantum applications based on a polarization transfer from the electron spin to the nuclei require the knowledge of the electron-nuclear interaction parameters, we have used high-frequency (94 GHz) electron-nuclear… ▽ More

    Submitted 10 April, 2024; originally announced April 2024.

    Comments: 9 pages, 7 figures

  2. arXiv:2305.07946  [pdf

    cond-mat.mtrl-sci

    Exploring the Properties of the V_B^- Defect in hBN: Optical Spin Polarization, Rabi Oscillations, and Coherent Nuclei Modulation

    Authors: Irina N. Gracheva, Margarita A. Sadovnikova, Fadis F. Murzakhanov, Georgy V. Mamin, Eduard I. Baibekov, Evgeniy N. Mokhov

    Abstract: Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap E_g = 6 eV, containing a negatively charged boron vacancy (V_B^-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work est… ▽ More

    Submitted 13 May, 2023; originally announced May 2023.

  3. arXiv:2302.08831  [pdf

    cond-mat.mtrl-sci

    Symmetry of the Hyperfine and Quadrupole Interactions of Boron Vacancies in a Hexagonal Boron Nitride

    Authors: Irina N. Gracheva, Fadis F. Murzakhanov, Georgy V. Mamin, Margarita A. Sadovnikova, Bulat F. Gabbasov, Evgeniy N. Mokhov, Marat R. Gafurov

    Abstract: The concept of optically addressable spin states of deep level defects in wide band gap materials is successfully applied for the development of quantum technologies. Recently discovered negatively charged boron vacancy defects (VB) in hexagonal boron nitride (hBN) potentially allow a transfer of this concept onto atomic thin layers due to the van der Waals nature of the defect host. Here, we expe… ▽ More

    Submitted 17 February, 2023; originally announced February 2023.

  4. Electron-nuclear coherent coupling and nuclear spin readout through optically polarized VB- spin states in hBN

    Authors: Fadis F. Murzakhanov, Georgy V. Mamin, Sergei B. Orlinskii, Uwe Gerstmann, Wolf G. Schmidt, Timur Biktagirov, Igor Aharonovich, Andreas Gottscholl, Andreas Sperlich, Vladimir Dyakonov, Victor A. Soltamov

    Abstract: Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter, are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (VB-) in electron-irradiated hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the VB- electron spin with a characteristic decay time… ▽ More

    Submitted 20 December, 2021; originally announced December 2021.

  5. arXiv:1811.12406  [pdf

    cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el quant-ph

    Coherent control of electron-nuclear states of rare-earth ions in crystals using radio-frequency and microwave radiation

    Authors: M. R. Gafurov, G. V. Mamin, E. I. Baibekov, I. N. Kurkin, F. F. Murzakhanov, S. B. Orlinskii

    Abstract: We have demonstrated electron-electron and electron-nuclear spin manipulations of Gd3+ ion in CaWO4 crystal. The results suggest that the studied system is perspective for multiqubit implementation in quantum computing.

    Submitted 29 November, 2018; originally announced November 2018.

    Comments: 2 Pages, 5 Figures

    Journal ref: EPJ Web Conf. Volume 195, 2018, 06003 (1-2)