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Magnetic Fluctuations in Niobium Pentoxide
Authors:
Y. Krasnikova,
A. A. Murthy,
F. Crisa,
M. Bal,
Z. Sung,
J. Lee,
A. Cano,
D. M. T. van Zanten,
A. Romanenko,
A. Grassellino,
A. Suter,
T. Prokscha,
Z. Salman
Abstract:
Using a spin-polarized muon beam we were able to capture magnetic dynamics in an amorphous niobium pentoxide thin film. Muons are used to probe internal magnetic fields produced by defects. Magnetic fluctuations could be described by the dynamical Kubo-Toyabe model considering a time-dependent local magnetic field. We state that observed fluctuations result from the correlated motion of electron s…
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Using a spin-polarized muon beam we were able to capture magnetic dynamics in an amorphous niobium pentoxide thin film. Muons are used to probe internal magnetic fields produced by defects. Magnetic fluctuations could be described by the dynamical Kubo-Toyabe model considering a time-dependent local magnetic field. We state that observed fluctuations result from the correlated motion of electron spins. We expect that oxygen vacancies play a significant role in these films and lead to a complex magnetic field distribution which is non-stationary. The characteristic average rate of magnetic field change is on the order of 100~MHz. The observed dynamics may provide insight into potential noise sources in Nb-based superconducting devices, while also highlighting the limitations imposed by amorphous oxides.
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Submitted 17 December, 2023;
originally announced December 2023.
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Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation
Authors:
Mustafa Bal,
Akshay A. Murthy,
Shaojiang Zhu,
Francesco Crisa,
Xinyuan You,
Ziwen Huang,
Tanay Roy,
Jaeyel Lee,
David van Zanten,
Roman Pilipenko,
Ivan Nekrashevich,
Andrei Lunin,
Daniel Bafia,
Yulia Krasnikova,
Cameron J. Kopas,
Ella O. Lachman,
Duncan Miller,
Josh Y. Mutus,
Matthew J. Reagor,
Hilal Cansizoglu,
Jayss Marshall,
David P. Pappas,
Kim Vu,
Kameshwar Yadavalli,
**-Su Oh
, et al. (15 additional authors not shown)
Abstract:
We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigati…
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We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different cap** materials, such as tantalum, aluminum, titanium nitride, and gold, and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T$_1$ relaxation times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When cap** niobium with tantalum, we obtain median qubit lifetimes above 300 microseconds, with maximum values up to 600 microseconds, that represent the highest lifetimes to date for superconducting qubits prepared on both sapphire and silicon. Our comparative structural and chemical analysis suggests why amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
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Submitted 24 January, 2024; v1 submitted 25 April, 2023;
originally announced April 2023.
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High quality superconducting Nb co-planar resonators on sapphire substrate
Authors:
S. Zhu,
F. Crisa,
M. Bal,
A. A. Murthy,
J. Lee,
Z. Sung,
A. Lunin,
D. Frolov,
R. Pilipenko,
D. Bafia,
A. Mitra,
A. Romanenko,
A. Grassellino
Abstract:
We present measurements and simulations of superconducting Nb co-planar waveguide resonators on sapphire substrate down to millikelvin temperature range with different readout powers. In the high temperature regime, we demonstrate that the Nb film residual surface resistance is comparable to that observed in the ultra-high quality, bulk Nb 3D superconducting radio frequency cavities while the reso…
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We present measurements and simulations of superconducting Nb co-planar waveguide resonators on sapphire substrate down to millikelvin temperature range with different readout powers. In the high temperature regime, we demonstrate that the Nb film residual surface resistance is comparable to that observed in the ultra-high quality, bulk Nb 3D superconducting radio frequency cavities while the resonator quality is dominated by the BCS thermally excited quasiparticles. At low temperature both the resonator quality factor and frequency can be well explained using the two-level system models. Through the energy participation ratio simulations, we find that the two-level system loss tangent is $\sim 10^{-2}$, which agrees quite well with similar studies performed on the Nb 3D cavities.
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Submitted 26 July, 2022;
originally announced July 2022.
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Stress-induced omega phase transition in Nb thin films for superconducting qubits
Authors:
Jaeyel Lee,
Zuhawn Sung,
Akshay A. Murthy,
Anna Grassellino,
Alex Romanenko
Abstract:
We report the observation of omega phase formation in Nb thin films deposited by high-power impulse magnetron sputtering (HiPIMS) for superconducting qubits using transmission electron microscopy (TEM). We hypothesize that this phase transformation to the omega phase with hexagonal structure from bcc phase as well as the formation of {111}<112> mechanical twins is induced by internal stress in the…
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We report the observation of omega phase formation in Nb thin films deposited by high-power impulse magnetron sputtering (HiPIMS) for superconducting qubits using transmission electron microscopy (TEM). We hypothesize that this phase transformation to the omega phase with hexagonal structure from bcc phase as well as the formation of {111}<112> mechanical twins is induced by internal stress in the Nb thin films. In terms of lateral dimensions, the size of the omega phase of Nb range from 10 to 100 nm, which is comparable to the coherence length of Nb (~40 nm). In terms of overall volume fraction, ~1 vol.% of the Nb grains exhibit this omega phase. We also find that the omega phase in Nb is not observed in large grain Nb samples, suggesting that the phase transition can be suppressed through reducing the grain boundary density, which may serve as a source of strain and dislocations in this system. The current finding may indicate that the Nb thin film is prone to the omega phase transition due to the internal stress in the Nb thin film. We conclude by discussing effects of the omega phase on the superconducting properties of Nb thin films and discussing pathways to mitigate their formation.
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Submitted 25 July, 2022;
originally announced July 2022.
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Develo** a Chemical and Structural Understanding of the Surface Oxide in a Niobium Superconducting Qubit
Authors:
Akshay A. Murthy,
Paul Masih Das,
Stephanie M. Ribet,
Cameron Kopas,
Jaeyel Lee,
Matthew J. Reagor,
Lin Zhou,
Matthew J. Kramer,
Mark C. Hersam,
Mattia Checchin,
Anna Grassellino,
Roberto dos Reis,
Vinayak P. Dravid,
Alexander Romanenko
Abstract:
Superconducting thin films of niobium have been extensively employed in transmon qubit architectures. Although these architectures have demonstrated remarkable improvements in recent years, further improvements in performance through materials engineering will aid in large-scale deployment. Here, we use information retrieved from secondary ion mass spectrometry and electron microscopy to conduct a…
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Superconducting thin films of niobium have been extensively employed in transmon qubit architectures. Although these architectures have demonstrated remarkable improvements in recent years, further improvements in performance through materials engineering will aid in large-scale deployment. Here, we use information retrieved from secondary ion mass spectrometry and electron microscopy to conduct a detailed assessment of the surface oxide that forms in ambient conditions for transmon test qubit devices patterned from a niobium film. We observe that this oxide exhibits a varying stoichiometry with NbO and NbO$_2$ found closer to the niobium film and Nb$_2$O$_5$ found closer to the surface. In terms of structural analysis, we find that the Nb$_2$O$_5$ region is semicrystalline in nature and exhibits randomly oriented grains on the order of 1-2 nm corresponding to monoclinic N-Nb$_2$O$_5$ that are dispersed throughout an amorphous matrix. Using fluctuation electron microscopy, we are able to map the relative crystallinity in the Nb$_2$O$_5$ region with nanometer spatial resolution. Through this correlative method, we observe that amorphous regions are more likely to contain oxygen vacancies and exhibit weaker bonds between the niobium and oxygen atoms. Based on these findings, we expect that oxygen vacancies likely serve as a decoherence mechanism in quantum systems.
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Submitted 28 July, 2022; v1 submitted 16 March, 2022;
originally announced March 2022.
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TOF-SIMS Analysis of Decoherence Sources in Nb Superconducting Resonators
Authors:
Akshay A. Murthy,
Jae-Yel Lee,
Cameron Kopas,
Matthew J. Reagor,
Anthony P. McFadden,
David P. Pappas,
Mattia Checchin,
Anna Grassellino,
Alexander Romanenko
Abstract:
Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of $μ$s, material quality and interfacial structures continue to curb device performance. When niobium is deploye…
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Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of $μ$s, material quality and interfacial structures continue to curb device performance. When niobium is deployed as the superconducting material, two-level system defects in the thin film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry (TOF-SIMS) to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated by Rigetti Computing and at the National Institute of Standards and Technology through slight variations in the processing and vacuum conditions. We find that when Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species such as niobium hydrides and carbides are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impact the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward.
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Submitted 30 August, 2021;
originally announced August 2021.
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Discovery of Nb hydride precipitates in superconducting qubits
Authors:
Jaeyel Lee,
Zuhawn Sung,
Akshay A. Murthy,
Matt Reagor,
Anna Grassellino,
Alexander Romanenko
Abstract:
We report the first evidence of the formation of niobium hydrides within niobium films on silicon substrates in superconducting qubits fabricated at Rigetti Computing. We combine complementary techniques including room and cryogenic temperature atomic scale high-resolution and scanning transmission electron microscopy (HR-TEM and STEM), atomic force microscopy (AFM), and the time-of-flight seconda…
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We report the first evidence of the formation of niobium hydrides within niobium films on silicon substrates in superconducting qubits fabricated at Rigetti Computing. We combine complementary techniques including room and cryogenic temperature atomic scale high-resolution and scanning transmission electron microscopy (HR-TEM and STEM), atomic force microscopy (AFM), and the time-of-flight secondary ion mass spectroscopy (TOF-SIMS) to reveal the existence of the niobium hydride precipitates directly in the Rigetti chip areas. Electron diffraction and high-resolution transmission electron microscopy (HR-TEM) analyses are performed at room and cryogenic temperatures (~106 K) on superconducting qubit niobium film areas, and reveal the formation of three types of Nb hydride domains with different crystalline orientations and atomic structures. There is also variation in their size and morphology from small (~5 nm) irregular shape domains within the Nb grains to large (~10-100 nm) Nb grains fully converted to niobium hydride. As niobium hydrides are non-superconducting and can easily change in size and location upon different cooldowns to cryogenic temperatures, our findings highlight a new previously unknown source of decoherence in superconducting qubits, contributing to both quasiparticle and two-level system (TLS) losses, and offering a potential explanation for qubit performance changes upon cooldowns. A pathway to mitigate the formation of the Nb hydrides for superconducting qubit applications is also discussed.
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Submitted 26 September, 2023; v1 submitted 23 August, 2021;
originally announced August 2021.
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Spatial Map** of Electrostatics and Dynamics across 2D Heterostructures
Authors:
Akshay A. Murthy,
Stephanie M. Ribet,
Teodor K. Stanev,
Pufan Liu,
Kenji Watanabe,
Takashi Taniguchi,
Nathaniel P. Stern,
Roberto dos Reis,
Vinayak P. Dravid
Abstract:
In situ electron microscopy is a key tool for understanding the mechanisms driving novel phenomena in 2D structures. Unfortunately, due to various practical challenges, technologically relevant 2D heterostructures prove challenging to address with electron microscopy. Here, we use the differential phase contrast imaging technique to build a methodology for probing local electrostatic fields during…
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In situ electron microscopy is a key tool for understanding the mechanisms driving novel phenomena in 2D structures. Unfortunately, due to various practical challenges, technologically relevant 2D heterostructures prove challenging to address with electron microscopy. Here, we use the differential phase contrast imaging technique to build a methodology for probing local electrostatic fields during electrical operation with nanoscale precision in such materials. We find that by combining a traditional DPC setup with a high pass filter, we can largely eliminate electric fluctuations emanating from short-range atomic potentials. With this method, a priori electric field expectations can be directly compared with experimentally derived values to readily identify inhomogeneities and potentially problematic regions. We use this platform to analyze the electric field and charge density distribution across layers of hBN and MoS2.
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Submitted 22 April, 2021; v1 submitted 26 December, 2020;
originally announced December 2020.
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Lithography-free IR polarization converters via orthogonal in-plane phonons in a-MoO3 flakes
Authors:
Sina Abedini Dereshgi,
Thomas G. Folland,
Akshay A. Murthy,
Xianglian Song,
Ibrahim Tanriover,
Vinayak P. Dravid,
Joshua D. Caldwell,
Koray Aydin
Abstract:
Exploiting polaritons in natural vdW materials has been successful in achieving extreme light confinement and low-loss optical devices and enabling simplified device integration. Recently, a-MoO3 has been reported as a semiconducting biaxial vdW material capable of sustaining naturally orthogonal in-plane phonon polariton modes in IR. In this study, we investigate the polarization-dependent optica…
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Exploiting polaritons in natural vdW materials has been successful in achieving extreme light confinement and low-loss optical devices and enabling simplified device integration. Recently, a-MoO3 has been reported as a semiconducting biaxial vdW material capable of sustaining naturally orthogonal in-plane phonon polariton modes in IR. In this study, we investigate the polarization-dependent optical characteristics of cavities formed using a-MoO3 to extend the degrees of freedom in the design of IR photonic components exploiting the in-plane anisotropy of this material. Polarization-dependent absorption over 80% in a multilayer Fabry-Perot structure with a-MoO3 is reported without the need for nanoscale fabrication on the a-MoO3. We observe coupling between the a-MoO3 optical phonons and the Fabry-Perot cavity resonances. Using cross-polarized reflectance spectroscopy we show that the strong birefringence results in 15% of the total power converted into the orthogonal polarization with respect to incident wave. These findings can open new avenues in the quest for polarization filters and low-loss, integrated planar IR photonics and in dictating polarization control.
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Submitted 16 October, 2020; v1 submitted 18 June, 2020;
originally announced June 2020.
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Au@MoS2@WS2 Core-Shell Architectures: A Solution to Versatile Colloidal Suspensions of 2D Heterostructures
Authors:
Jennifer G. DiStefano,
Akshay A. Murthy,
Chamille J. Lescott,
Roberto dos Reis,
Yuan Li,
Vinayak P. Dravid
Abstract:
For years, solution processing has provided a versatile platform to extend the applications of transition metal dichalcogenides (TMDs) beyond those achievable with traditional preparation methods. However, existing solution-based synthesis and exfoliation approaches are not compatible with complex geometries, particularly when interfacial control is desired. As a result, promising TMD structures,…
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For years, solution processing has provided a versatile platform to extend the applications of transition metal dichalcogenides (TMDs) beyond those achievable with traditional preparation methods. However, existing solution-based synthesis and exfoliation approaches are not compatible with complex geometries, particularly when interfacial control is desired. As a result, promising TMD structures, including MoS2/WS2 heterostructures, are barred from the rich assembly and modification opportunities possible with solution preparation. Here, we introduce a strategy that combines traditional vapor phase deposition and solution chemistry to build TMD core-shell heterostructures housed in aqueous media. We report the first synthesized TMD core-shell heterostructure, Au@MoS2@WS2, with an Au nanoparticle core and MoS2 and WS2 shells, and provide a means of suspending the structure in solution to allow for higher order patterning and ligand-based functionalization. High-resolution electron microscopy and Raman spectroscopy provide detailed analysis of the structure and interfaces of the core-shell heterostructures. UV-vis, dynamic light scattering, and zeta potential measurements exhibit the outstanding natural stability and monodispersity of Au@MoS2@WS2 in solution. As a proof of concept, the aqueous environment is utilized to both functionalize the core-shell heterostructures with electrostatic ligands and pattern them into desired configurations on a target substrate. This work harnesses the advantages of vapor phase preparation of nanomaterials and the functionality possible with aqueous suspension to expand future engineering and application opportunities of TMD heterostructures.
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Submitted 26 November, 2019;
originally announced November 2019.
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Direct Visualization of Electric Field induced Structural Dynamics in Monolayer Transition Metal Dichalcogenides
Authors:
Akshay A. Murthy,
Teodor K. Stanev,
Roberto dos Reis,
Shiqiang Hao,
Chris Wolverton,
Nathaniel P. Stern,
Vinayak P. Dravid
Abstract:
Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that give rise to realizable macroscopic device properties are often unclear. In this study, in situ transmission electron microscopy techniques are utilized in order…
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Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that give rise to realizable macroscopic device properties are often unclear. In this study, in situ transmission electron microscopy techniques are utilized in order to understand the structural dynamics at play, especially at interfaces and defects, in the prototypical film of monolayer MoS2 under electrical bias. Through our sample fabrication process, we clearly identify the presence of mass transport in the presence of a lateral electric field. In particular, we observe that the voids present at grain boundaries combine to induce structural deformation. The electric field mediates a net vacancy flux from the grain boundary interior to the exposed surface edge sites that leaves molybdenum clusters in its wake. Following the initial biasing cycles, however, the mass flow is largely diminished, and the resultant structure remains stable over repeated biasing. We believe insights from this work can help explain observations of non-uniform heating and preferential oxidation at grain boundary sites in these materials.
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Submitted 11 February, 2020; v1 submitted 7 October, 2019;
originally announced October 2019.