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Induced Giant Piezoelectricity in Centrosymmetric Oxides
Authors:
D. -S. Park,
M. Hadad,
L. M. Rimer,
R. Ignatans,
D. Spirito,
V. Esposito,
V. Tileli,
N. Gauquelin,
D. Chezganov,
D. Jannis J. Verbeeck,
S. Gorfman,
N. Pryds,
P. Muralt,
D. Damjanovic
Abstract:
Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric material must possess a non centrosymmetric crystal structure. For more than a century, this remains the major obstacle for finding new piezoelectric materials. We circumvent this limitation by breaking the crystallographic symmetry, and inducing large and sustai…
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Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric material must possess a non centrosymmetric crystal structure. For more than a century, this remains the major obstacle for finding new piezoelectric materials. We circumvent this limitation by breaking the crystallographic symmetry, and inducing large and sustainable piezoelectric effects in centrosymmetric materials by electric field induced rearrangement of oxygen vacancies Surprisingly, the results show the generation of extraordinarily large piezoelectric responses d33 ~200,000 pm/V), in cubic fluorite Gd-doped CeO2-x films, which is two orders of magnitude larger than in the presently best known lead based piezoelectric relaxor ferroelectric oxide. These findings open opportunities to design new piezoelectric materials from environmentally friendly centrosymmetric ones.
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Submitted 10 February, 2022; v1 submitted 1 November, 2021;
originally announced November 2021.
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Fabrication, characterization, and simulation of glass devices with AlN-thin-film-transducers for excitation of ultrasound resonances
Authors:
André G. Steckel,
Henrik Bruus,
Paul Muralt,
Ramin Matloub
Abstract:
We present fabrication of 570-um-thick, millimeter-sized soda-lime-silicate float glass blocks with a 1-um-thick AlN-thin-film piezoelectric transducer sandwiched between thin metallic electrodes and deposited on the top surface. The electro-mechanical properties are characterized by electrical impedance measurements in the frequency range from 0.1 to 10 MHz with a peak-to-peak voltage of 0.5 V ap…
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We present fabrication of 570-um-thick, millimeter-sized soda-lime-silicate float glass blocks with a 1-um-thick AlN-thin-film piezoelectric transducer sandwiched between thin metallic electrodes and deposited on the top surface. The electro-mechanical properties are characterized by electrical impedance measurements in the frequency range from 0.1 to 10 MHz with a peak-to-peak voltage of 0.5 V applied to the electrodes. We measured the electrical impedance spectra of 35 devices, all of width 2 mm, but with 9 different lengths ranging from 2 to 6 mm and with 2-7 copies of each individual geometry. Each impedance spectrum exhibits many resonance peaks, of which we carefully measured the 5 most prominent ones in each spectrum. We compare the resulting 173 experimental resonance frequencies with the simulation result of a finite-element-method model that we have developed. When using material parameters from the manufacturer, we obtain an average relative deviation of the 173 simulated resonance frequencies from the experimental ones of (-4.2 +/-0.04)%. When optimizing the values of the Young's modulus and the Poisson ratio of the float glass in the simulation, this relative deviation decreased to (-0.03 +/- 0.04)%. Our results suggest a method for an accurate in-situ determination of the acoustic parameters at ultrasound frequencies of any elastic solid onto which a thin-film transducer can be attached
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Submitted 16 November, 2020;
originally announced November 2020.
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Effect of Oxygen Defects Blocking Barriers on Gadolinium Doped Ceria (GDC) Electro-Chemo-Mechanical Properties
Authors:
Ahsanul Kabir,
Simone Santucci,
Ngo Van Nong,
Maxim Varenik,
Igor Lubomirsky,
Robin Nigon,
Paul Muralt,
Vincenzo Esposito
Abstract:
Some oxygen defective metal oxides, such as cerium and bismuth oxides, have recently shown exceptional electrostrictive properties that are even superior to the best performing lead-based electrostrictors, e.g. lead-magnesium-niobates (PMN). Compared to piezoelectric ceramics, electromechanical mechanisms of such materials do not depend on crystalline symmetry, but on the concentration of oxygen v…
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Some oxygen defective metal oxides, such as cerium and bismuth oxides, have recently shown exceptional electrostrictive properties that are even superior to the best performing lead-based electrostrictors, e.g. lead-magnesium-niobates (PMN). Compared to piezoelectric ceramics, electromechanical mechanisms of such materials do not depend on crystalline symmetry, but on the concentration of oxygen vacancy in the lattice. In this work, we investigate for the first time the role of oxygen defect configuration on the electro-chemo-mechanical properties. This is achieved by tuning the oxygen defects blocking barrier density in polycrystalline gadolinium doped ceria with known oxygen vacancy concentration, Ce0.9Gd0.1O2-x,x= 0.05. Nanometric starting powders of ca. 12 nm are sintered in different conditions, including field assisted spark plasma sintering (SPS), fast firing and conventional method at high temperatures. These approaches allow controlling grain size and Gd-dopant diffusion, i.e. via thermally driven solute drag mechanism. By correlating the electro-chemo-mechanical properties, we show that oxygen vacancy distribution in the materials play a key role in ceria electrostriction, overcoming the expected contributions from grain size and dopant concentration.
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Submitted 3 July, 2019;
originally announced July 2019.
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Effect of AlN Seed Layer on Crystallographic Characterization of Piezoelectric AlN
Authors:
Kaitlin M. Howell,
Waqas Bashir,
Annalisa de Pastina,
Ramin Matloub,
Paul Muralt,
Luis G. Villanueva
Abstract:
Ultrathin aluminum nitride (AlN) films are of great interest for integration into nanoelectromechanical systems for actuation and sensing. Given the direct relationship between crystallographic texture and piezoelectric response, x-ray diffraction has become an important metrology step. However, signals from layers deposited below the piezoelectric (PZE) AlN thin film may skew the crystallographic…
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Ultrathin aluminum nitride (AlN) films are of great interest for integration into nanoelectromechanical systems for actuation and sensing. Given the direct relationship between crystallographic texture and piezoelectric response, x-ray diffraction has become an important metrology step. However, signals from layers deposited below the piezoelectric (PZE) AlN thin film may skew the crystallographic analysis and give misleading results. In this work, we compare the use of a Ti or AlN seed layer on the crystallographic quality of PZE AlN. We also analyze the influence of several AlN seed layer thicknesses on the rocking curve FWHM of PZE AlN and demonstrate an larger effect of the AlN seed layer on the θ-2θ AlN <0002> crystallographic peak for increasing AlN seed layer thickness.
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Submitted 22 November, 2018;
originally announced November 2018.
