Showing 1–50 of 91 results for author: Muralidharan, B

2024 roadmap on 2D topological insulators

Authors: Bent Weber, Michael S Fuhrer, Xian-Lei Sheng, Shengyuan A Yang, Ronny Thomale, Saquib Shamim, Laurens W Molenkamp, David Cobden, Dmytro Pesin, Harold J W Zandvliet, Pantelis Bampoulis, Ralph Claessen, Fabian R Menges, Johannes Gooth, Claudia Felser, Chandra Shekhar, Anton Tadich, Mengting Zhao, Mark T Edmonds, Junxiang Jia, Maciej Bieniek, Jukka I Väyrynen, Dimitrie Culcer, Bhaskaran Muralidharan, Muhammad Nadeem

Abstract: 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first disc… ▽ More 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first discoveries of topological phases in condensed matter, the abstract concept of band topology has sprung into realization with several materials now available in which sizable bulk energy gaps - up to a few hundred meV - promise to enable topology for applications even at room-temperature. Further, the possibility of combining 2D TIs in heterostructures with functional materials such as multiferroics, ferromagnets, and superconductors, vastly extends the range of applicability beyond their intrinsic properties. While 2D TIs remain a unique testbed for questions of fundamental condensed matter physics, proposals seek to control the topologically protected bulk or boundary states electrically, or even induce topological phase transitions to engender switching functionality. Induction of superconducting pairing in 2D TIs strives to realize non-Abelian quasiparticles, promising avenues towards fault-tolerant topological quantum computing. This roadmap aims to present a status update of the field, reviewing recent advances and remaining challenges in theoretical understanding, materials synthesis, physical characterization and, ultimately, device perspectives. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Steady-state dynamics and non-local correlations in thermoelectric Cooper pair splitters

Authors: Arnav Arora, Siddhant Midha, Alexander Zyuzin, Pertti Hakonen, Bhaskaran Muralidharan

Abstract: Recent experiments on Cooper pair splitters using superconductor-quantum dot hybrids have embarked on creating entanglement in the solid-state, by engineering the sub-gap processes in the superconducting region. Using the thermoelectric Cooper pair splitter setup [Nat. Comm., 12, 21, (2021)] as a prototype, we develop a detailed analysis of the observed transport signal to bring out vital insights… ▽ More Recent experiments on Cooper pair splitters using superconductor-quantum dot hybrids have embarked on creating entanglement in the solid-state, by engineering the sub-gap processes in the superconducting region. Using the thermoelectric Cooper pair splitter setup [Nat. Comm., 12, 21, (2021)] as a prototype, we develop a detailed analysis of the observed transport signal to bring out vital insights into the regimes of operation and establish the non-local nature of the correlations arising from the crossed Andreev processes. As a striking consequence, contact induced level broadening of the quantum dot's discrete energy spectrum and its hybridization with the superconducting segment, results in a parity reversal of the thermoelectric current along with shifted resonances of the crossed Andreev processes. We conclusively establish the presence of non-local correlations by making a clear nexus with quantum discord. Our detailed analysis thereby provides insights into the gate voltage control of the entanglement generation in superconducting-hybrid Cooper pair splitters. △ Less

Submitted 10 June, 2024; originally announced June 2024.

Comments: 10 pages, 4 figures, Comments welcome

Ultrahigh Frequency and Multi-channel Output in Skyrmion Based Nano-oscillator

Authors: Abhishek Sharma, Saumya Gupta, Debasis Das, Ashwin. A. Tulapurkar, Bhaskaran Muralidharan

Abstract: Spintronic nano-oscillators can generate tunable microwave signals that find a wide range of applications in the field of telecommunication to modern neuromorphic computing systems. Among other spintronic devices, a magnetic skyrmion is a promising candidate for the next generation of low-power devices due to its small size and topological stability. In this work, we propose a multi-channel oscill… ▽ More Spintronic nano-oscillators can generate tunable microwave signals that find a wide range of applications in the field of telecommunication to modern neuromorphic computing systems. Among other spintronic devices, a magnetic skyrmion is a promising candidate for the next generation of low-power devices due to its small size and topological stability. In this work, we propose a multi-channel oscillator design based on the synthetic anti-ferromagnetic (SAF) skyrmion pair. The mitigation of the skyrmion Hall effect in SAF and the associated decimation of the Magnus force endows the proposed oscillator with an ultra-high frequency of 41GHz and a multi-channel frequency output driven by the same current. The ultrahigh operational frequency represents an $\sim$342 times improvement compared to the monolayer single skyrmion oscillator featuring a constant uniaxial anisotropy profile. Using micromagnetic simulations, we demonstrate the effectiveness of our proposed multi-channel oscillator design by introducing multi-channel nanotracks along with multiple skyrmions for enhanced frequency operation. The ultrahigh operational frequency and multi-channel output are attributed to three key factors: The oscillator design accounting for a finite spin-flip length of the spacer (such as Ru) material, tangential velocity proportionality on input spin current along with weak dependence on the radius of rotation of the skyrmion-pair, skyrmion interlocking in the channel enabled by the multi-channel high Ku rings and skyrmion-skyrmion repulsion, therefore resulting ultrahigh frequency and multi-channel outputs. △ Less

Submitted 20 March, 2024; originally announced March 2024.

Spintronic Implementation of UNet for Image Segmentation

Authors: Venkatesh Vadde, Bhaskaran Muralidharan, Abhishek Sharma

Abstract: Image segmentation plays a crucial role in computer vision applications like self-driving cars, satellite imagery analysis, and medical diagnosis. Implementing these complex deep neural networks on conventional hardware is highly inefficient. In this work, we propose hardware implementation of UNet for segmentation tasks, using spintronic devices. Our approach involves designing hardware for convo… ▽ More Image segmentation plays a crucial role in computer vision applications like self-driving cars, satellite imagery analysis, and medical diagnosis. Implementing these complex deep neural networks on conventional hardware is highly inefficient. In this work, we propose hardware implementation of UNet for segmentation tasks, using spintronic devices. Our approach involves designing hardware for convolution, deconvolution, ReLU, and max pooling layers of the UNet architecture. We demonstrate the synaptic behavior of the domain wall MTJ, and design convolution and deconvolution layers using the domain wall-based crossbar array. We utilize the orthogonal current injected MTJ with its continuous resistance change and showcase the ReLU and max pooling functions. We employ a hybrid simulation setup by coupling micromagnetic simulation, non-equilibrium Green's function, Landau-Lifshitz-Gilbert-Slonczewski equations, and circuit simulation with Python programming to incorporate the diverse physics of spin-transport, magnetization dynamics, and CMOS elements in our proposed designs. We evaluate our UNet design on the CamVid dataset and achieve segmentation accuracies that are comparable to software implementation. During training, our design consumes 43.59pJ of energy for synaptic weight updates. △ Less

Submitted 5 March, 2024; originally announced March 2024.

Inclined junction in monolayer graphene: A gateway toward tailoring valley polarization of Dirac fermions

Authors: Shrushti Tapar, Bhaskaran Muralidharan

Abstract: Generating discernible valley contrasts and segregating valley-indexed fermions in real space within graphene poses considerable challenges due to the isotropic transport within the continuum energy range for degenerate valleys. This study unveils an interesting finding: introducing valley contrast through anisotropic chiral transport in isotropic Dirac systems like graphene, achieved by implement… ▽ More Generating discernible valley contrasts and segregating valley-indexed fermions in real space within graphene poses considerable challenges due to the isotropic transport within the continuum energy range for degenerate valleys. This study unveils an interesting finding: introducing valley contrast through anisotropic chiral transport in isotropic Dirac systems like graphene, achieved by implementing a tilted PN junction. The tilted junction shifts the angular spectrum to larger angles in accordance with the tilt angle. This modifies the pseudospin-conserved modes across the junction, resulting in valley-resolved chiral transport. This approach not only induces valley splitting within the real space but also preserves the remarkable mobility of fermions, offering distinct advantages over alternative strategies. The comprehensive analysis includes optimizing the experimental setup, scrutinizing factors such as the sequence of the doped region, and examining critical parameters like the tilt angle delta and transition width d across the junction. Surprisingly, an increased transition width enhances transmission, attributed to specular edge scattering. Importantly, the system remains resilient to Anderson short-range edge disorder. The broader implication lies in the transformative potential of inducing analogous anisotropic chiral transport behaviors in isotropic Dirac systems, resembling the characteristics of tilted Dirac-Weyl semimetals, by incorporating a tilted PNJ. △ Less

Submitted 21 February, 2024; originally announced February 2024.

Comments: 14 pages, 8 figures, comments welcome

Insights into optical absorption and dark currents of the 6.1Å Type-II superlattice absorbers for MWIR and SWIR applications

Authors: Anuja Singh, Bhaskaran Muralidharan

Abstract: A holistic computational analysis is developed to calculate the quantum efficiency of InAs/GaSb superlattice-based photodetectors. Starting with the electronic band characteristics computed by taking the InSb/GaAs at the interface using the 8-band k.p approach, we demonstrate the impact of InAs and GaSb widths on the bandgap, carrier concentration, and the oscillator strength for type-II superlatt… ▽ More A holistic computational analysis is developed to calculate the quantum efficiency of InAs/GaSb superlattice-based photodetectors. Starting with the electronic band characteristics computed by taking the InSb/GaAs at the interface using the 8-band k.p approach, we demonstrate the impact of InAs and GaSb widths on the bandgap, carrier concentration, and the oscillator strength for type-II superlattice absorbers. Subsequently, the alteration of these characteristics due to the extra AlSb layer in the M superlattice absorber is investigated. Extending our models for determining TE- and TM-polarized optical absorption, our calculations reveal that the TE-polarized absorption shows a substantial influence near the conduction-heavy hole band transition energy, which eventually diminishes, owing to the dominant TM-contribution due to the conduction-light hole band transition. Extending our analysis to the dark currents, we focus mainly on Schokley-Read-Hall recombination and radiative recombination at lower temperatures, and show that Schokley-Read-Hall dominates at low-level injection. We show that short-wavelength and mid-wavelength M superlattice structures exhibit higher quantum efficiency than the corresponding same bandgap type-II superlattice with the lower diffusion dark current. Further, we analyze the density of states blocked by the barrier; crucial for XBp photodetector after absorber examination. Our work thus sets a stage for a holistic and predictive theory aided analysis of the type-II superlattice absorbers, from the atomistic interfacial details all the way to the dark currents and absorption spectra. △ Less

Submitted 11 May, 2024; v1 submitted 3 December, 2023; originally announced December 2023.

Magneto-transport in the monolayer MoS2 material system for high-performance field-effect transistor applications

Authors: Anup Kumar Mandia, Rohit Kumar, Seung-Cheol Lee, Satadeep Bhattacharjee, Bhaskaran Muralidharan

Abstract: Electronic transport in monolayer MoS2 is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. Our paper aims to unveil the underlying mechanisms of the electrical and magneto-transport in monolayer MoS2. In order to quantitatively interpret the magneto-transport behavior of monolayer MoS2 on different substrate materials, identify… ▽ More Electronic transport in monolayer MoS2 is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. Our paper aims to unveil the underlying mechanisms of the electrical and magneto-transport in monolayer MoS2. In order to quantitatively interpret the magneto-transport behavior of monolayer MoS2 on different substrate materials, identify the underlying bottlenecks, and provide guidelines for subsequent improvements, we present a deep analysis of the magneto-transport properties in the diffusive limit. Our calculations are performed on suspended monolayer MoS2 and MoS2 on different substrate materials taking into account remote impurity and the intrinsic and extrinsic phonon scattering mechanisms. We calculate the crucial transport parameters such as the Hall mobility, the conductivity tensor elements, the Hall factor, and the magnetoresistance over a wide range of temperatures, carrier concentrations, and magnetic fields. The Hall factor being a key quantity for calculating the carrier concentration and drift mobility, we show that for suspended monolayer MoS2 at room temperature, the Hall factor value is around 1.43 for magnetic fields ranging from 0.001 to 1 Tesla, which deviates significantly from the usual value of unity. In contrast, the Hall factor for various substrates approaches the ideal value of unity and remains stable in response to the magnetic field and temperature. We also show that the MoS2 over an Al2O3 substrate is a good choice for the Hall effect detector. Moreover, the magnetoresistance increases with an increase in magnetic field strength for smaller magnetic fields before reaching saturation at higher magnetic fields. The presented theoretical model quantitatively captures the scaling of mobility and various magnetoresistance coefficients with temperature, carrier densities and magnetic fields. △ Less

Submitted 1 December, 2023; originally announced December 2023.

Comments: 12 pages, 12 figures. Comments welcome

Ultrahigh-performance superlattice mid-infrared nBn photodetectors at high operating temperatures

Authors: Rohit Kumar, Bhaskaran Muralidharan

Abstract: While advancing a physics-based comprehensive photodetector-simulation model, we propose a novel device design of the mid-wavelength infrared nBn photodetectors by exploiting the inherit flexibility of the $InAs_{1-x}Sb_{x}$ ternary alloy material system. To further explicate the physics of such photodetectors, we calculate several crucial transport and optoelectronic parameters, including the dar… ▽ More While advancing a physics-based comprehensive photodetector-simulation model, we propose a novel device design of the mid-wavelength infrared nBn photodetectors by exploiting the inherit flexibility of the $InAs_{1-x}Sb_{x}$ ternary alloy material system. To further explicate the physics of such photodetectors, we calculate several crucial transport and optoelectronic parameters, including the dark current density, absorption coefficient, responsivity, and the quantum efficiency of nBn photodetectors. A remarkable maximum efficiency of 57.39\% is achieved at room temperature at a bias of -0.25 V, coupled with a radiation power density of 50 mW/$cm^{2}$. The proposed structure features a maximum quantum efficiency of 44.18\% and 37.87\% at 60\% and 70\% of the $λ_c$, respectively. Furthermore, a maximum responsivity of 0.9257 A/W is shown within the mid-wavelength infrared spectrum. Through our comprehensive analysis, we also demonstrate that our proposed device design effectively reduces the dark current density by confining the electric field inside the barrier while preserving a superior level of quantum efficiency, and the current in such detectors is diffusion-limited. Insights uncovered here could be of broad interest to critically evaluate the potential of the nBn structures for mid-wavelength infrared photodetectors. △ Less

Submitted 2 October, 2023; originally announced October 2023.

Comments: 5 pages, 5 figures, Appendices included. Comments welcome

Machine learning unveils multiple Pauli blockades in the transport spectroscopy of bilayer graphene double-quantum dots

Authors: Anuranan Das, Adil Khan, Ankan Mukherjee, Bhaskaran Muralidharan

Abstract: Recent breakthroughs in the transport spectroscopy of 2-D material quantum-dot platforms have engendered a fervent interest in spin-valley qubits. In this context, Pauli blockades in double quantum dot structures form an important basis for multi-qubit initialization and manipulation. Focusing on double quantum dot structures, and the experimental results, we first build theoretical models to capt… ▽ More Recent breakthroughs in the transport spectroscopy of 2-D material quantum-dot platforms have engendered a fervent interest in spin-valley qubits. In this context, Pauli blockades in double quantum dot structures form an important basis for multi-qubit initialization and manipulation. Focusing on double quantum dot structures, and the experimental results, we first build theoretical models to capture the intricate interplay between externally fed gate voltages and the physical properties of the 2-D system in such an architecture, allowing us to effectively simulate Pauli blockades. Employing the master equations for transport and considering extrinsic factors such as electron-photon interactions, we thoroughly investigate all potential occurrences of Pauli blockades. Notably, our research reveals two remarkable phenomena: (i) the existence of multiple resonances within a bias triangle, and (ii) the occurrence of multiple Pauli blockades. Leveraging our model to train a machine learning algorithm, we successfully develop an automated method for real-time detection of multiple Pauli blockade regimes. Through numerical predictions and validations against test data, we identify where and how many Pauli blockades are likely to occur. We propose that our model can effectively detect the generic class of Pauli blockades in practical experimental setups and hence serves as the foundation for future experiments on qubits that utilize 2-D material platforms. △ Less

Submitted 9 August, 2023; originally announced August 2023.

Comments: 11 pages, 7 figures, Comments welcome

Straintronics using the monolayer-Xene platform -- a comparative study

Authors: Swastik Sahoo, Namitha Anna Koshi, Seung-Cheol Lee, Satadeep Bhattacharjee, Bhaskaran Muralidharan

Abstract: Monolayer silicene is a front runner in the 2D-Xene family, which also comprises germanene, stanene, and phosphorene, to name a few, due to its compatibility with current silicon fabrication technology. Here, we investigate the utility of 2D-Xenes for straintronics using the ab-initio density functional theory coupled with quantum transport based on the Landauer formalism. With a rigorous band str… ▽ More Monolayer silicene is a front runner in the 2D-Xene family, which also comprises germanene, stanene, and phosphorene, to name a few, due to its compatibility with current silicon fabrication technology. Here, we investigate the utility of 2D-Xenes for straintronics using the ab-initio density functional theory coupled with quantum transport based on the Landauer formalism. With a rigorous band structure analysis, we show the effect of strain on the K-point, and calculate the directional piezoresistances for the buckled Xenes as per their critical strain limit. Further, we compare the relevant gauge factors, and their sinusoidal dependences on the transport angle akin to silicene and graphene. The strain-insensitive transport angles corresponding to the zero gauge factors are 81 degree and 34 degree for armchair and zigzag strains, respectively, for silicene and germanene. For stanene as the strain limit is extended to 10% and notable changes in the fundamental parameters, the critical angle for stanene along armchair and zigzag directions are 69 degree and 34 degree respectively. The small values of gauge factors are attributed to their stable Dirac cones and strain-independent valley degeneracies. We also explore conductance modulation, which is quantized in nature and exhibits a similar pattern with other transport parameters against a change in strain. Based on the obtained results, we propose the buckled Xenes as an interconnect in flexible electronics and are promising candidates for various applications in straintronics. △ Less

Submitted 2 June, 2023; originally announced June 2023.

Comments: 16 pages, 9 figures

Are Symmetry Protected Topological Phases Immune to Dephasing?

Authors: Siddhant Midha, Koustav Jana, Bhaskaran Muralidharan

Abstract: Harnessing topological phases with their dissipationless edge-channels coupled with the effective engineering of quantum phase transitions is a spinal aspect of topological electronics. The accompanying symmetry protection leads to different kinds of topological edge-channels which include, for instance, the quantum spin Hall phase, and the spin quantum anomalous Hall phase. To model realistic dev… ▽ More Harnessing topological phases with their dissipationless edge-channels coupled with the effective engineering of quantum phase transitions is a spinal aspect of topological electronics. The accompanying symmetry protection leads to different kinds of topological edge-channels which include, for instance, the quantum spin Hall phase, and the spin quantum anomalous Hall phase. To model realistic devices, it is important to ratify the robustness of the dissipationless edge-channels, which should typically exhibit a perfect quantum of conductance, against various disorder and dephasing. This work is hence devoted to a computational exploration of topological robustness against various forms of dephasing. For this, we employ phenomenological dephasing models under the Keldysh non-equilibrium Green's function formalism using a model topological device setup on a 2D-Xene platform. Concurrently, we also explicitly add disorder via impurity potentials in the channel and averaging over hundreds of configurations. To describe the extent of robustness, we quantify the decay of the conductance quantum with increasing disorder under different conditions. Our analysis shows that these topological phases are robust to experimentally relevant regimes of momentum dephasing and random disorder potentials. We note that Rashba mixing worsens the performance of the QSH phase and point out a mechanism for the same. Further, we observe that the quantum spin Hall phase break downs due to spin dephasing, but the spin quantum anomalous Hall phase remains robust. The spin quantum anomalous Hall phase shows stark robustness under all the dephasing regimes, and shows promise for realistic device structures for topological electronics applications. △ Less

Submitted 18 May, 2023; originally announced May 2023.

Comments: 10 pages, 8 figures. Comments welcome

Power efficient ReLU design for neuromorphic computing using spin Hall effect

Authors: Venkatesh Vadde, Bhaskaran Muralidharan, Abhishek Sharma

Abstract: We demonstrate a magnetic tunnel junction injected with spin Hall current to exhibit linear rotation of magnetization of the free-ferromagnet using only the spin current. Using the linear resistance change of the MTJ, we devise a circuit for the rectified linear activation (ReLU) function of the artificial neuron. We explore the role of different spin Hall effect (SHE) heavy metal layers on the po… ▽ More We demonstrate a magnetic tunnel junction injected with spin Hall current to exhibit linear rotation of magnetization of the free-ferromagnet using only the spin current. Using the linear resistance change of the MTJ, we devise a circuit for the rectified linear activation (ReLU) function of the artificial neuron. We explore the role of different spin Hall effect (SHE) heavy metal layers on the power consumption of the ReLU circuit. We benchmark the power consumption of the ReLU circuit with different SHE layers by defining a new parameter called the spin Hall power factor. It combines the spin Hall angle, resistivity, and thickness of the heavy metal layer, which translates to the power consumption of the different SHE layers during spin-orbit switching/rotation of the free FM. We employ a hybrid spintronics-CMOS simulation framework that couples Keldysh non-equilibrium Green's function formalism with Landau-Lifshitz-Gilbert-Slonzewski equations and the HSPICE circuit simulator to account for diverse physics of spin-transport and the CMOS elements in our proposed ReLU design. We also demonstrate the robustness of the proposed ReLU circuit against thermal noise and non-trivial power-error trade-off that enables the use of an unstable free-ferromagnet for energy-efficient design. Using the proposed circuit, we evaluate the performance of the convolutional neural network for MNIST datasets and demonstrate comparable classification accuracies to the ideal ReLU with an energy consumption of 75 $pJ$ per sample. △ Less

Submitted 11 March, 2023; originally announced March 2023.

On the conclusive detection of Majorana zero modes: conductance spectroscopy, disconnected entanglement entropy and the fermion parity noise

Authors: Arnav Arora, Abhishek Kejriwal, Bhaskaran Muralidharan

Abstract: Semiconducting nanowires with strong Rashba spin-orbit coupling in the proximity with a superconductor and under a strong Zeeman field can potentially manifest Majorana zero modes at their edges and are a topical candidate for topological superconductivity. However, protocols for their detection based on the local and the non-local conductance spectroscopy have been subject to intense scrutiny. In… ▽ More Semiconducting nanowires with strong Rashba spin-orbit coupling in the proximity with a superconductor and under a strong Zeeman field can potentially manifest Majorana zero modes at their edges and are a topical candidate for topological superconductivity. However, protocols for their detection based on the local and the non-local conductance spectroscopy have been subject to intense scrutiny. In this work, by taking current experimental setups into account, we detail mathematical ideas related to the entanglement entropy and the fermion parity fluctuations to faithfully distinguish between true Majorana zero modes and trivial quasi-Majorana zero modes. We demonstrate that the disconnected entanglement entropy, derived from the von Neumann entanglement entropy, provides a distinct and robust signature of the topological phase transition which is immune to system parameters, size and disorders. In order to understand the entanglement entropy of the Rashba nanowire system, we establish its connection to a model of interacting spinfull Kitaev chains. Moreover, we relate the entanglement entropy to the fermionic parity fluctuation, and show that it behaves concordantly with entanglement entropy, hence making it a suitable metric for the detection of Majorana zero modes. In connection with the topological gap protocol that is based on the conductance spectra, the aforesaid metrics can reliably point toward the topological transitions even in realistic setups. △ Less

Submitted 7 March, 2023; originally announced March 2023.

Comments: 10 pages, 10 figures, comments welcome

High-frequency complex impedance analysis of the two-dimensional semiconducting MXene-$Ti_2CO_2$

Authors: Anup Kumar Mandia, Rohit Kumar, Namitha Anna Koshi, Seung-Cheol Lee, Satadeep Bhattacharjee, Bhaskaran Muralidharan

Abstract: The two-dimensional compound group of MXenes, which exhibit unique optical, electrical, chemical, and mechanical properties, are an exceptional class of transition metal carbides and nitrides. In addition to traditional applications in Li-S, Li-ion batteries, conductive electrodes, hydrogen storage, and fuel cells, the low lattice thermal conductivity coupled with high electron mobility in the sem… ▽ More The two-dimensional compound group of MXenes, which exhibit unique optical, electrical, chemical, and mechanical properties, are an exceptional class of transition metal carbides and nitrides. In addition to traditional applications in Li-S, Li-ion batteries, conductive electrodes, hydrogen storage, and fuel cells, the low lattice thermal conductivity coupled with high electron mobility in the semiconducting oxygen-functionalized MXene-$Ti_2CO_2$ has led to the recent interests in high-performance thermoelectric and nanoelectronic devices. Apart from the above dc-transport applications, it is crucial to also understand ac-transport across them, given the growing interest in applications surrounding wireless communications and transparent conductors. In this work, we investigate using our recently developed $ab~initio$ transport model, the real and imaginary components of electron mobility and conductivity to conclusively depict carrier transport beyond the room temperature for frequency ranges upto the terahertz range. We also contrast the carrier mobility and conductivity with respect to the Drude's model to depict its inaccuracies for a meaningful comparison with experiments. Our calculations show the effect of acoustic deformation potential scattering, piezoelectric scattering, and polar optical phonon scattering mechanisms. Without relying on experimental data, our model requires inputs calculated from first principles using density functional theory. Our results set the stage for providing ab-initio based ac-transport calculations given the current research on MXenes for high frequency applications. △ Less

Submitted 27 January, 2023; originally announced January 2023.

Comments: 9 pages, 10 figures

Advancing carrier transport models for InAs/GaSb type-II superlattice MWIR photodetectors

Authors: Rohit Kumar, Anup Kumar Mandia, Anuja Singh, Bhaskaran Muralidharan

Abstract: In order to provide the best possible performance, modern infrared photodetector designs necessitate extremely precise modeling of the superlattice absorber region. We advance the Rode's method for the Boltzmann transport equation in conjunction with the $\bf k.p$ band structure and the envelope function approximation for a detailed computation of the carrier mobility and conductivity of layered t… ▽ More In order to provide the best possible performance, modern infrared photodetector designs necessitate extremely precise modeling of the superlattice absorber region. We advance the Rode's method for the Boltzmann transport equation in conjunction with the $\bf k.p$ band structure and the envelope function approximation for a detailed computation of the carrier mobility and conductivity of layered type-II superlattice structures, using which, we unravel two crucial insights. First, the significance of both elastic and inelastic scattering mechanisms, particularly the influence of the interface roughness and polar optical phonon scattering mechanisms in technologically relevant superlattice structures. Second, that the structure-specific Hall mobility and Hall scattering factor reveals that temperature and carrier concentrations significantly affect the Hall scattering factor, which deviates significantly from unity even for small magnetic fields. This reinforces the caution that should be exercised when employing the Hall scattering factor in experimental estimations of drift mobilities and carrier concentrations. Our research hence offers a comprehensive microscopic understanding of carrier dynamics in such technologically relevant superlattices. Our models also provide highly accurate and precise transport parameters beyond the relaxation time approximation and thereby paving the way to develop physics-based device modules for mid-wavelength infrared photodetectors. △ Less

Submitted 12 January, 2023; originally announced January 2023.

Comments: 13 pages, 14 figures, comments welcome

Giant excitonic magneto-optical Faraday rotation in single semimagnetic CdTe/Cd_{1-x}Mn_{x}Te quantum ring

Authors: Kalpana Panneerselvam, Bhaskaran Muralidharan

Abstract: Magnetic tuning of the bound exciton states and corresponding giant Zeeman splitting (GZS) between σ^{+} and σ^{-} excitonic transitions in CdTe/Cd_{1-x}Mn_{x}Te quantum ring has been investigated in the Faraday configuration for various concentrations of Mn^{2+} ions, using the variational technique in the effective mass approximation. The sp-d exchange interaction between the localized magnetic… ▽ More Magnetic tuning of the bound exciton states and corresponding giant Zeeman splitting (GZS) between σ^{+} and σ^{-} excitonic transitions in CdTe/Cd_{1-x}Mn_{x}Te quantum ring has been investigated in the Faraday configuration for various concentrations of Mn^{2+} ions, using the variational technique in the effective mass approximation. The sp-d exchange interaction between the localized magnetic impurity ions and the delocalized charge carriers has been accounted via mean-field theory with the inclusion of a modified Brillouin function. The enhancement of the GZS, and in turn, the effective g-factor with the application of an external magnetic field, is strikingly manifested in type-I - type-II transition in the band structure, which has been well explained by computing the overlap integral between the electron and hole, and the in-plane exciton radius. This highlights the extraordinary magneto-optical properties, including the giant Faraday rotation and associated Verdet constant, which have been calculated using single oscillator model. The oscillator strength and exciton lifetime have been estimated, and are found to be larger than in the bulk diluted magnetic semiconductors (DMS) and quantum wells, reflecting stronger confinement inside the quantum ring. The results show that the DMS-based quantum ring exhibits more extensive Zeeman splitting, which gives rise to ultra-high Verdet constant of 2.6 \times 10^{9}rad/Tesla/m, which are a few orders of magnitude larger than in the existing quantum systems and magneto-optical materials. △ Less

Submitted 19 January, 2023; v1 submitted 30 December, 2022; originally announced January 2023.

Exciton magnetic polaron in CdTe/Cd_{1-x}Mn_{x}Te semimagnetic quantum ring

Authors: Kalpana Panneerselvam, Bhaskaran Muralidharan

Abstract: Magnetically doped nanostructures can significantly enhance the interaction between the band carriers and the dopant atoms. Motivated by the demonstration of the enhanced sp-d exchange interaction in quantum confined structures with the increased stability of the exciton magnetic polaron (EMP), we report the quantitative and qualitative analyses of the EMP formation in CdTe/Cd_{1-x}Mn_{x}Te dilute… ▽ More Magnetically doped nanostructures can significantly enhance the interaction between the band carriers and the dopant atoms. Motivated by the demonstration of the enhanced sp-d exchange interaction in quantum confined structures with the increased stability of the exciton magnetic polaron (EMP), we report the quantitative and qualitative analyses of the EMP formation in CdTe/Cd_{1-x}Mn_{x}Te diluted magnetic quantum ring (QR). The QR with two different configurations: (i) the non-magnetic ring (CdTe) embedded in the semimagnetic Cd_{1-x}Mn_{x}Te matrix, and (ii) magnetically non-uniform quantum structures embedded with Mn2+ ions both in the ring and in the barrier regimes, have been investigated for various mole fractions of the Mn dopants. The larger polaron binding energy (EMP) of 23meV is estimated for the 5% molar Mn contents compared to the other quantum confined systems made of CdMnTe. The magnetic field dependence of the MP energy and the corresponding polaron parameters like exchange field, localization radius of the MP, and the degree of circular polarization induced by the external applied magnetic field at T = 4.2K have been derived. The obtained results are in excellent agreement with the trend of the significant degradation of EMP in an external magnetic field, and with the contradictory tendencies of EMP for the QR with configuration (i) and (ii), as reported from the time-integrated measurements based on selective excitation for the quantum systems made of CdMnTe and other DMS materials. △ Less

Submitted 30 December, 2022; originally announced December 2022.

Identifying Pauli blockade regimes in bilayer graphene double quantum dots

Authors: Ankan Mukherjee, Bhaskaran Muralidharan

Abstract: Recent experimental observations of current blockades in 2-D material quantum-dot platforms have opened new avenues for spin and valley-qubit processing. Motivated by experimental results, we construct a model capturing the delicate interplay of Coulomb interactions, inter-dot tunneling, Zeeman splittings, and intrinsic spin-orbit coupling in a double quantum dot structure to simulate the Pauli bl… ▽ More Recent experimental observations of current blockades in 2-D material quantum-dot platforms have opened new avenues for spin and valley-qubit processing. Motivated by experimental results, we construct a model capturing the delicate interplay of Coulomb interactions, inter-dot tunneling, Zeeman splittings, and intrinsic spin-orbit coupling in a double quantum dot structure to simulate the Pauli blockades. Analyzing the relevant Fock-subspaces of the generalized Hamiltonian, coupled with the density matrix master equation technique for transport across the setup, we identify the generic class of blockade mechanisms. Most importantly, and contrary to what is widely recognized, we show that conducting and blocking states responsible for the Pauli-blockades are a result of the coupled effect of all degrees of freedom and cannot be explained using the spin or the valley pseudo-spin only. We then numerically predict the regimes where Pauli blockades might occur, and, to this end, we verify our model against actual experimental data and propose that our model can be used to generate data sets for different values of parameters with the ultimate goal of training on a machine learning algorithm. Our work provides an enabling platform for a predictable theory-aided experimental realization of single-shot readout of the spin and valley states on DQDs based on 2D-material platforms. △ Less

Submitted 14 December, 2022; originally announced December 2022.

Comments: 13 pages, 5 figures, comments welcome

Effectuating tunable valley selection via multi-terminal monolayer graphene devices

Authors: Shrushti Tapar, Bhaskaran Muralidharan

Abstract: Valleytronics using two-dimensional materials opens unprecedented opportunities for information processing with the valley polarizer being a basic building block. Paradigms such as strain engineering, the inclusion of line defects, and the application of electrostatic-magnetic fields extensively explored for creating valley polarization suffer from limitations like smaller transmission or the lack… ▽ More Valleytronics using two-dimensional materials opens unprecedented opportunities for information processing with the valley polarizer being a basic building block. Paradigms such as strain engineering, the inclusion of line defects, and the application of electrostatic-magnetic fields extensively explored for creating valley polarization suffer from limitations like smaller transmission or the lack of polarization directionality. We propose an all-electrical valley polarizer using zigzag edge graphene nanoribbons in a multi-terminal device geometry, that can be gate-tuned to operate along two independent regimes: (i) terminal-specific valley filter that utilizes bandstructure engineering, and (ii) parity-specific valley filter that exploits the parity selection rule in zigzag edge graphene. We show that the device exhibits intriguing physics in the multimode regime of operation that affects the valley polarization and hence investigate various factors affecting the polarization in wide device geometries, such as, optical analogs of graphene Dirac fermions, angle-selective transmission via p-n junctions, and the localization of edge states. We optimize the geometry of the proposed device to achieve maximum valley polarization, thereby, paving the way toward a physics based tunable valleytronic device design using monolayer graphene. △ Less

Submitted 14 December, 2022; originally announced December 2022.

Comments: 10 pages, 7 figures, comments welcome

Resonant weak-value enhancement for solid-state quantum metrology

Authors: Mahadevan Subramanian, Amal Mathew, Bhaskaran Muralidharan

Abstract: Quantum metrology that employs weak-values can potentially effectuate parameter estimation with an ultra-high sensitivity and has been typically explored across quantum optics setups. Recognizing the importance of sensitive parameter estimation in the solid-state, we propose a spintronic device platform to realize this. The setup estimates a very weak localized Zeeman splitting by exploiting a res… ▽ More Quantum metrology that employs weak-values can potentially effectuate parameter estimation with an ultra-high sensitivity and has been typically explored across quantum optics setups. Recognizing the importance of sensitive parameter estimation in the solid-state, we propose a spintronic device platform to realize this. The setup estimates a very weak localized Zeeman splitting by exploiting a resonant tunneling enhanced magnetoresistance readout. We establish that this paradigm offers nearly optimal performance with a quantum Fisher information enhancement of about $10^4$ times that of single high-transmissivity barriers. The obtained signal also offers a high sensitivity in the presence of dephasing effects typically encountered in the solid state. These results put forth definitive possibilities in harnessing the inherent sensitivity of resonant tunneling for solid-state quantum metrology with potential applications, especially, in the sensitive detection of small induced Zeeman effects in quantum material heterostructures. △ Less

Submitted 30 November, 2022; originally announced November 2022.

Comments: 9 pages, 5 figures, comments welcome

Can magneto-transport properties provide insight into the functional groups in semiconducting MXenes?

Authors: Namitha Anna Koshi, Anup Kumar Mandia, Bhaskaran Muralidharan, Seung-Cheol Lee, Satadeep Bhattacharjee

Abstract: The Hall scattering factor of Sc2CF2, Sc2CO2 and Sc2C(OH)2 is calculated using Rode's iterative approach by solving the Boltzmann transport equation. This is carried out in conjunction with calculations based on density functional theory. The electrical transport in Sc2CF2, Sc2CO2, and Sc2C(OH)2 is modelled by accounting for both elastic (acoustic and piezoelectric) and inelastic (polar optical ph… ▽ More The Hall scattering factor of Sc2CF2, Sc2CO2 and Sc2C(OH)2 is calculated using Rode's iterative approach by solving the Boltzmann transport equation. This is carried out in conjunction with calculations based on density functional theory. The electrical transport in Sc2CF2, Sc2CO2, and Sc2C(OH)2 is modelled by accounting for both elastic (acoustic and piezoelectric) and inelastic (polar optical phonon) scattering. Polar optical phonon (POP) scattering is the most significant mechanism in these MXenes. We observe that there is a window of carrier concentration where Hall factor acts dramatically; Sc2CF2 obtains an incredible high value of 2.49 while Sc2CO2 achieves a very small value of approximately 0.5, and Sc2C(OH)2 achieves the so called ideal value of 1. We propose in this paper that such Hall factor behaviour has significant promise in the field of surface group identification in MXenes, an issue that has long baffled researchers. △ Less

Submitted 28 October, 2022; originally announced October 2022.

Orthogonal Spin Current Injected Magnetic Tunnel Junction for Convolutional Neural Networks

Authors: Venkatesh Vadde, Bhaskaran Muralidharan, Abhishek Sharma

Abstract: We propose that a spin Hall effect driven magnetic tunnel junction device can be engineered to provide a continuous change in the resistance across it when injected with orthogonal spin currents. Using this concept, we develop a hybrid device-circuit simulation platform to design a network that realizes multiple functionalities of a convolutional neural network. At the atomistic level, we use the… ▽ More We propose that a spin Hall effect driven magnetic tunnel junction device can be engineered to provide a continuous change in the resistance across it when injected with orthogonal spin currents. Using this concept, we develop a hybrid device-circuit simulation platform to design a network that realizes multiple functionalities of a convolutional neural network. At the atomistic level, we use the Keldysh non-equilibrium Green's function technique that is coupled self-consistently with the stochastic Landau-Lifshitz-Gilbert-Slonczewski equations, which in turn is coupled with the HSPICE circuit simulator. We demonstrate the simultaneous functionality of the proposed network to evaluate the rectified linear unit and max-pooling functionalities. We present a detailed power and error analysis of the designed network against the thermal stability factor of the free ferromagnets. Our results show that there exists a non-trivial power-error trade-off in the proposed network, which enables an energy-efficient network design based on unstable free ferromagnets with reliable outputs. The static power for the proposed ReLU circuit is $0.56μW$ and whereas the energy cost of a nine-input rectified linear unit-max-pooling network with an unstable free ferromagnet($Δ=15$) is $3.4pJ$ in the worst-case scenario. We also rationalize the magnetization stability of the proposed device by analyzing the vanishing torque gradient points. △ Less

Submitted 4 February, 2023; v1 submitted 29 July, 2022; originally announced July 2022.

Comments: 12 pages, 15 figures, Updated version, Comments welcome

Electrical and magneto transport in 2D semiconducting MXene Ti2CO2

Authors: Anup Kumar Mandia, Namitha Anna Koshi, Bhaskaran Muralidharan, Seung-Cheol Lee, Satadeep Bhattacharjee

Abstract: The Hall scattering factor is formulated using Rode's iterative approach to solving the Boltzmann transport equation in such a way that it may be easily computed within the scope of ab-inito calculations. Using this method in conjunction with density functional theory based calculations, we demonstrate that the Hall scattering factor in electron-doped Ti2CO2 varies greatly with temperature and con… ▽ More The Hall scattering factor is formulated using Rode's iterative approach to solving the Boltzmann transport equation in such a way that it may be easily computed within the scope of ab-inito calculations. Using this method in conjunction with density functional theory based calculations, we demonstrate that the Hall scattering factor in electron-doped Ti2CO2 varies greatly with temperature and concentration, ranging from 0.2 to around 1.3 for weak magnetic fields. The electrical transport was modelled primarily using three scattering mechanisms: piezoelectric scattering, acoustic scattering, and polar optical phonons. Even though the mobility in this material is primarily limited by acoustic phonons, piezoelectric scattering also plays an important role which was not highlighted earlier. △ Less

Submitted 10 May, 2022; v1 submitted 23 March, 2022; originally announced March 2022.

Conductance Spectroscopy of Majorana Zero Modes in Superconductor-Magnetic Insulating Nanowire Hybrid Systems

Authors: Roshni Singh, Bhaskaran Muralidharan

Abstract: There has been recent interest in superconductor-magnetic insulator hybrid Rashba nanowire setups for potentially hosting Majorana zero modes at smaller external Zeeman fields. Using the non-equilibrium Green's function technique, we develop a quantum transport model that accounts for the interplay between the quasiparticle dynamics in the superconductor-magnetic insulator bilayer structure and th… ▽ More There has been recent interest in superconductor-magnetic insulator hybrid Rashba nanowire setups for potentially hosting Majorana zero modes at smaller external Zeeman fields. Using the non-equilibrium Green's function technique, we develop a quantum transport model that accounts for the interplay between the quasiparticle dynamics in the superconductor-magnetic insulator bilayer structure and the transport processes through the Rashba nanowire. We provide an analysis of three-terminal setups to probe the local and non-local conductance in clean and disordered nanowires. We uncover the gap closing and reopening followed by the emergence of near-zero energy states, which can be attributed to topological zero modes in the clean limit. In the presence of a disordered potential, trivial Andreev bound states may form with signatures reminiscent of topological zero modes. Our results provide transport-based analysis of regimes that support the formation of Majorana modes in these hybrid systems while investigating the effect of disorder on devices. △ Less

Submitted 26 January, 2023; v1 submitted 16 March, 2022; originally announced March 2022.

Comments: Accepted for publication in Comms. Phys., 9 pages, 5 figures, Supplementary material included with more details on the calculations

Silicene for flexible electronics

Authors: Swastik Sahoo, Abhinaba Sinha, Namitha Anna Koshi, Seung-Cheol Lee, Satadeep Bhattacharjee, Bhaskaran Muralidharan

Abstract: The outstanding properties of graphene have laid the foundation for exploring graphene-like two-dimensional systems, commonly referred to as 2D-Xenes. Amongst them, silicene is a front-runner owing to its compatibility with current silicon fabrication technologies. Recent works on silicene have unveiled its useful electronic and mechanical properties. The rapid miniaturization of silicon devices a… ▽ More The outstanding properties of graphene have laid the foundation for exploring graphene-like two-dimensional systems, commonly referred to as 2D-Xenes. Amongst them, silicene is a front-runner owing to its compatibility with current silicon fabrication technologies. Recent works on silicene have unveiled its useful electronic and mechanical properties. The rapid miniaturization of silicon devices and the useful electro-mechanical properties of silicene necessitates the exploration for potential applications of silicene flexible electronics in the nano electro-mechanical systems. Using a theoretical model derived from the integration of \textit{ab-initio} density-functional theory and quantum transport theory, we investigate the piezoresistance effect of silicene in the nanoscale regime. Like graphene, we obtain a small value of piezoresistance gauge factor of silicene, which is sinusoidally dependent on the transport angle. The small gauge factor of silicene is attributed to its robust Dirac cone and strain-independent valley degeneracy. Based on the obtained results, we propose to use silicene as an interconnect in flexible electronic devices and a reference piezoresistor in strain sensors. This work will hence pave the way for exploring flexible electronics applications in other 2D-Xene materials. △ Less

Submitted 1 March, 2022; originally announced March 2022.

Comments: 8 pages, 23 figures

Robust Subthermionic Topological Transistor Action via Antiferromagnetic Exchange

Authors: Sagnik Banerjee, Koustav Jana, Anirban Basak, Michael S Fuhrer, Dimitrie Culcer, Bhaskaran Muralidharan

Abstract: The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to harness this will necessitate delving into the physics of the quantum field effect transition between the dissipationless topological phase and the band insulator pha… ▽ More The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to harness this will necessitate delving into the physics of the quantum field effect transition between the dissipationless topological phase and the band insulator phase. Investigating workable device structures, we uncover fundamental sub-threshold limits posed by the gating mechanism that effectuates such a transition, thereby emphasizing the need for innovations on materials and device structures. Detailing the complex band translation physics related to the quantum spin Hall effect phase transition, it is shown that a gating strategy to beat the thermionic limit can be engineered at the cost of sacrificing the dissipationless ON-state conduction. It is then demonstrated that an out-of-plane antiferromagnetic exchange introduced in the material via proximity coupling can incite transitions between the quantum spin-valley Hall and the spin quantum anomalous Hall phase, which can ultimately ensure the topological robustness of the ON state while surpassing the thermionic limit. Our work thus underlines the operational criteria for building topological transistors using quantum materials that can overcome the Boltzmann's tyranny while preserving the topological robustness. △ Less

Submitted 24 February, 2022; originally announced February 2022.

Comments: 8 pages, 6 figures, supplementary material included. Comments welcome

Ballistic graphene array for ultra-high pressure sensing

Authors: Abhinaba Sinha, Pankaj Priyadarshi, Bhaskaran Muralidharan

Abstract: Atomically thin two-dimensional materials such as graphene exhibit extremely high-pressure sensitivity compared to the commercially used pressure sensors due to their high surface-to-volume ratio and excellent mechanical properties. The smaller piezoresistance of graphene across different transport regimes limits its pressure sensitivity compared to other two-dimensional materials. Using membrane… ▽ More Atomically thin two-dimensional materials such as graphene exhibit extremely high-pressure sensitivity compared to the commercially used pressure sensors due to their high surface-to-volume ratio and excellent mechanical properties. The smaller piezoresistance of graphene across different transport regimes limits its pressure sensitivity compared to other two-dimensional materials. Using membrane theory and thin-film adhesivity model, we show miniaturization as means to enhance theoverall performance of graphene pressure sensors. Our findings reveal that ballistic graphene canbe configured to measure ultra-high pressure (10^9 Pa) with many-fold higher sensitivity per unit area than quasi-ballistic graphene, diffusive graphene, and thin layers of transition metal dichalcogenides. Based on these findings, we propose an array of ballistic graphene sensors with extremely high-pressure sensitivity and ultra high-pressure range that will find applications in next-generation NEMS pressure sensors. The performance parameters of the array sensors can be further enhancedby reducing the size of graphene membranes and increasing the number of sensors in the array. The methodology developed in this paper can be used to explore similar applications using other two-dimensional materials. △ Less

Submitted 19 January, 2022; originally announced January 2022.

Steady-State Tunable Entanglement Thermal Machine Using Quantum Dots

Authors: Anuranan Das, Adil Anwar Khan, Sattwik Deb Mishra, Parvinder Solanki, Bitan De, Bhaskaran Muralidharan, Sai Vinjanampathy

Abstract: We present a solid state thermal machine based on quantum dots to generate steady-state entanglement between distant spins. Unlike previous approaches our system is controlled by experimentally feasible steady state currents manipulated by dc voltages. By analyzing the Liouvillian eigenspectrum as a function of the control parameters, we show that our device operates over a large voltage region. A… ▽ More We present a solid state thermal machine based on quantum dots to generate steady-state entanglement between distant spins. Unlike previous approaches our system is controlled by experimentally feasible steady state currents manipulated by dc voltages. By analyzing the Liouvillian eigenspectrum as a function of the control parameters, we show that our device operates over a large voltage region. As an extension, the proposed device also works as an entanglement thermal machine under a temperature gradient that can even give rise to entanglement at zero voltage bias. Finally, we highlight a post-selection scheme based on currently feasible non-demolition measurement techniques that can generate perfect Bell-pairs from the steady state output of our thermal machine. △ Less

Submitted 22 December, 2021; originally announced December 2021.

Comments: 10 pages, 3 figures, comments welcome

Proposal for a solid-state magnetoresistive Larmor quantum clock

Authors: Amal Mathew, Kerem Y Camsari, Bhaskaran Muralidharan

Abstract: We propose a solid-state implementation of the Larmor clock that exploits tunnel magnetoresistance to distill information on how long itinerant spins take to traverse a barrier embedded in it. Kee** in mind that the tunnelling time innately involves pristine pre-selection and post-selection, our proposal takes into account the detrimental aspects of multiple reflections by incorporating multiple… ▽ More We propose a solid-state implementation of the Larmor clock that exploits tunnel magnetoresistance to distill information on how long itinerant spins take to traverse a barrier embedded in it. Kee** in mind that the tunnelling time innately involves pristine pre-selection and post-selection, our proposal takes into account the detrimental aspects of multiple reflections by incorporating multiple contacts, multiple current measurements and suitably defined magnetoresistance signals. Our analysis provides a direct map** between the magnetoresistance signals and the tunneling times and aligns well with the interpretation in terms of generalized quantum measurements and quantum weak values. By means of an engineered pre-selection in one of the ferromagnetic contacts, we also elucidate how one can make the measurement "weak" by minimizing the back-action, while kee** the tunneling time unchanged. We then analyze the resulting interpretations of the tunneling time and the measurement back action in the presence of phase breaking effects that are intrinsic to solid state systems. We unravel that while the time-kee** aspect of the Larmor clock is reasonably undeterred due to momentum and phase relaxation processes, it degrades significantly in the presence of spin-dephasing. We believe that the ideas presented here also open up a fructuous solid state platform to encompass emerging ideas in quantum technology such as quantum weak values and its applications, that are currently exclusive to quantum optics and cold atoms. △ Less

Submitted 3 December, 2021; originally announced December 2021.

Comments: 8 pages, 6 figures, supplementary material included, comments welcome

Journal ref: Physical Review B, 105, 144418 (2022)

Can non-local conductance spectra conclusively signal Majorana zero modes? -- Insights from von Neumann entropy

Authors: Abhishek Kejriwal, Bhaskaran Muralidharan

Abstract: The topological origin of the zero bias conductance signatures obtained via conductance spectroscopy in topological superconductor hybrid systems is a much contended issue. Recently, non-local conductance signatures that exploit the non-locality of the zero modes in three terminal hybrid setups have been proposed as means to ascertain the definitive presence of Majorana modes. The topological enta… ▽ More The topological origin of the zero bias conductance signatures obtained via conductance spectroscopy in topological superconductor hybrid systems is a much contended issue. Recently, non-local conductance signatures that exploit the non-locality of the zero modes in three terminal hybrid setups have been proposed as means to ascertain the definitive presence of Majorana modes. The topological entanglement entropy, which is based on the von Neumann entropy, is yet another way to gauge the non-locality in connection with the bulk-boundary correspondence of a topological phase. We show that while both the entanglement entropy and the non-local conductance exhibit a clear topological phase transition signature for long enough pristine nanowires, non-local conductance fails to signal a topological phase transition for shorter disordered wires. While recent experiments have indeed shown premature gap-closure signatures in the non-local conductance spectra, we believe that the entanglement entropy can indeed signal a genuine transition, regardless of the constituent non-idealities in an experimental situation. Our results thereby point toward furthering the development of experimental techniques beyond conductance measurements to achieve a conclusive detection of Majorana zero modes. △ Less

Submitted 3 December, 2021; originally announced December 2021.

Comments: 8 pages, 6 figures, supplementary material included, comments welcome

Comprehensive quantum transport analysis of M-Superlattice structures for barrier infrared detectors

Authors: Anuja Singh, Swarnadip Mukherjee, Bhaskaran Muralidharan

Abstract: In pursuit of designing superior type-II superlattice barrier infrared detectors, this study encompasses an exhaustive analysis of utilizing M-structured superlattices for both the absorber and barrier layers through proper band engineering and discusses its potential benefits over other candidates. The electronic band properties of ideally infinite M-structures are calculated using the eight band… ▽ More In pursuit of designing superior type-II superlattice barrier infrared detectors, this study encompasses an exhaustive analysis of utilizing M-structured superlattices for both the absorber and barrier layers through proper band engineering and discusses its potential benefits over other candidates. The electronic band properties of ideally infinite M-structures are calculated using the eight band $k.p$ method which takes into account the effects of both strain and microscopic interface asymmetry to primarily estimate the bandgap and density-of-states effective mass and their variation with respect to the thicknesses of the constituent material layers. In contrast, for practical finite-period structures, the local density-of-states and spectral tunneling transmission and current calculated using the Keldysh non-equilibrium Green's function approach with the inclusion of non-coherent scattering processes offer deep insights into the qualitative aspects of miniband and localization engineering via structural variation. Our key results demonstrate how to achieve a wide infrared spectral range, reduce tunneling dark currents, induce strong interband wavefunction overlaps at the interfaces for adequate absorption, and excellent band-tunability to facilitate unipolar or bipolar current blocking barriers. This study, therefore, perfectly exemplifies the utilization of 6.1 Angstrom material library to its full potential through the demonstration of band engineering in M-structured superlattices and sets up the right platform to possibly replace other complex superlattice systems for targeted applications. △ Less

Submitted 3 December, 2021; originally announced December 2021.

Comments: 10 pages, 10 figures, comments welcome

Momentum relaxation effects in 2D-Xene field effect device structures

Authors: Anirban Basak, Pratik Brahma, Bhaskaran Muralidharan

Abstract: We analyze the electric field driven topological field effect transition on 2D-xene materials with the addition of momentum relaxation effects, in order to account for dephasing processes. The topological field effect transition between the quantum spin Hall phase and the quantum valley Hall phase is analyzed in detail using the Keldysh non-equilibrium Green's function technique with the inclusion… ▽ More We analyze the electric field driven topological field effect transition on 2D-xene materials with the addition of momentum relaxation effects, in order to account for dephasing processes. The topological field effect transition between the quantum spin Hall phase and the quantum valley Hall phase is analyzed in detail using the Keldysh non-equilibrium Green's function technique with the inclusion of momentum and phase relaxation, within the self-consistent Born approximation. Details of the transition with applied electric field are elucidated for the ON-OFF characteristics with emphasis on the transport properties along with the tomography of the current carrying edge states. We note that for moderate momentum relaxation, the current carrying quantum spin Hall edge states are still pristine and show moderate decay with propagation. To facilitate our analysis, we introduce two metrics in our calculations, the coherent transmission and the effective transmission. In elucidating the physics clearly, we show that the effective transmission, which is derived rigorously from the quantum mechanical current operator is indeed the right quantity to analyze topological stability against dephasing. Exploring further, we show that the insulating quantum valley Hall phase, as a result of dephasing carries band-tails which potentially activates parasitic OFF currents, thereby degrading the ON-OFF ratios. Our analysis sets the stage for realistic modeling of topological field effect devices for various applications, with the inclusion of scattering effects and analyzing their role in the optimization of the device performance. △ Less

Submitted 14 October, 2021; originally announced October 2021.

Comments: 10 pages, 7 figures

Exploring ideas in topological quantum phenomena: A journey through the SSH model

Authors: Anantha Hegde, Adarsh Kumar, Adhip Agarwala, Bhaskaran Muralidharan

Abstract: Geared as an invitation for undergraduates, beginning graduate students, we present a pedagogical introduction to one-dimensional topological phases -- in particular the Su-Schrieffer-Heeger model. In the process, we delve upon ideas of entanglement using the correlator method and the von-Neumann density-matrix method, geometric phase, polarization, transport signatures and the role of electron-el… ▽ More Geared as an invitation for undergraduates, beginning graduate students, we present a pedagogical introduction to one-dimensional topological phases -- in particular the Su-Schrieffer-Heeger model. In the process, we delve upon ideas of entanglement using the correlator method and the von-Neumann density-matrix method, geometric phase, polarization, transport signatures and the role of electron-electron interactions. Through hands-on numerical experiments, whose $\href{https://github.com/hnoend/SSH_codes}{codes}$ are shared, we try to drive home the message why a program of simulating quantum electronics with topological toy models is the store house for discovering fantastic physics ideas. △ Less

Submitted 3 August, 2021; originally announced August 2021.

Comments: Pedagogical Article, 68 pages, 24 figures

Robust all-electrical topological valley filtering using monolayer 2D-Xenes

Authors: Koustav Jana, Bhaskaran Muralidharan

Abstract: We propose a realizable device design for an all-electrical robust valley filter that utilizes spin protected topological interface states hosted on monolayer 2D-Xene materials with large intrinsic spin-orbit coupling. In contrast with conventional quantum spin-Hall edge states localized around the $X$-points, the interface states appearing at the domain wall between topologically distinct phases… ▽ More We propose a realizable device design for an all-electrical robust valley filter that utilizes spin protected topological interface states hosted on monolayer 2D-Xene materials with large intrinsic spin-orbit coupling. In contrast with conventional quantum spin-Hall edge states localized around the $X$-points, the interface states appearing at the domain wall between topologically distinct phases are either from the $K$ or $K^{'}$ points, making them suitable prospects for serving as valley-polarized channels. We show that the presence of a large band-gap quantum spin Hall effect enables the spatial separation of the spin-valley locked helical interface states with the valley states being protected by spin conservation, leading to a robustness against short-range non-magnetic disorder. By adopting the scattering matrix formalism on a suitably designed device structure, valley-resolved transport in the presence of non-magnetic short-range disorder for different 2D-Xene materials is also analyzed in detail. Our numerical simulations confirm the role of spin-orbit coupling in achieving an improved valley filter performance with a perfect quantum of conductance attributed to the topologically protected interface states. Our analysis further elaborates clearly the right choice of material, device geometry and other factors that need to be considered while designing an optimized valleytronic filter device. △ Less

Submitted 13 October, 2021; v1 submitted 28 July, 2021; originally announced July 2021.

Comments: 11 pages, 7 figures, 2 tables. Comments welcome

Journal ref: npj 2D Materials and Applications, 6, 19, (2022)

Role of dephasing on the conductance signatures of Majorana zero modes

Authors: Chaitrali Duse, Praveen Sriram, Kaveh Gharavi, Jonathan Baugh, Bhaskaran Muralidharan

Abstract: Conductance signatures that signal the presence of Majorana zero modes in a three terminal nanowire-topological superconductor hybrid system are analyzed in detail, in both the clean nanowire limit and in the presence of non-coherent dephasing interactions. In the coherent transport regime for a clean wire, we point out contributions of the local Andreev reflection and the non-local transmissions… ▽ More Conductance signatures that signal the presence of Majorana zero modes in a three terminal nanowire-topological superconductor hybrid system are analyzed in detail, in both the clean nanowire limit and in the presence of non-coherent dephasing interactions. In the coherent transport regime for a clean wire, we point out contributions of the local Andreev reflection and the non-local transmissions toward the total conductance lineshapes while clarifying the role of contact broadening on the Majorana conductance lineshapes at the magnetic field parity crossings. Interestingly, at larger $B$-field parity crossings, the contribution of the Andreev reflection process decreases which is compensated by the non-local processes in order to maintain the conductance quantum regardless of contact coupling strength. In the non-coherent transport regime, we include dephasing that is introduced by momentum randomization processes, that allows one to smoothly transition to the diffusive limit. Here, as expected, we note that while the Majorana character of the zero modes is unchanged, there is a reduction in the conductance peak magnitude that scales with the strength of the impurity scattering potentials. Important distinctions between the effect of non-coherent dephasing processes and contact-induced tunnel broadenings in the coherent regime on the conductance lineshapes are elucidated. Most importantly our results reveal that the addition of dephasing in the set up does not lead to any notable length dependence to the conductance of the zero modes, contrary to what one would expect in a gradual transition to the diffusive limit. We believe this work paves a way for a systematic introduction of scattering processes into the realistic modeling of Majorana nanowire hybrid devices and assessing topological signatures in such systems in the presence of non-coherent scattering processes. △ Less

Submitted 17 April, 2021; v1 submitted 16 March, 2021; originally announced March 2021.

Comments: 17 pages, 14 figures

Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors

Authors: Swarnadip Mukherjee, Anuja Singh, Aditi Bodhankar, Bhaskaran Muralidharan

Abstract: Microscopic features of carrier localization, minibands, and spectral currents of InAs/GaSb based type-II superlattice (T2SL) mid-infrared detector structures are studied and investigated in detail. In the presence of momentum and phase-relaxed elastic scattering processes, we show that a self-consistent non-equilibrium Green's function method within the effective mass approximation can be an effe… ▽ More Microscopic features of carrier localization, minibands, and spectral currents of InAs/GaSb based type-II superlattice (T2SL) mid-infrared detector structures are studied and investigated in detail. In the presence of momentum and phase-relaxed elastic scattering processes, we show that a self-consistent non-equilibrium Green's function method within the effective mass approximation can be an effective tool to fairly predict the miniband and spectral transport properties and their dependence on the design parameters such as layer thickness, superlattice periods, temperature, and built-in potential. To benchmark this model, we first evaluate the band properties of an infinite T2SL with periodic boundary conditions, employing the envelope function approximation with a finite-difference discretization within the perturbative eight-band $\bf{k.p}$ framework. The strong dependence of the constituent material layer thicknesses on the band-edge positions and effective masses offers a primary guideline to design performance-specific detectors for a wide range of operations. Moving forward, we demonstrate that using a finite T2SL structure in the Green's function framework, one can estimate the bandgap, band-offsets, density of states, and spatial overlap which comply well with the $\bf{k.p}$ results and the experimental data. Finally, the superiority of this method is illustrated via a reasonable estimation of the band alignments in barrier-based multi-color non-periodic complex T2SL structures. This study, therefore, provides deep physical insights into the carrier confinements in broken-gap heterostructures and sets a perfect stage to perform transport calculations in a full-quantum picture. △ Less

Submitted 15 March, 2021; originally announced March 2021.

Linear and non-linear transport across a finite Kitaev chain: an exact analytical study

Authors: Nico Leumer, Magdalena Marganska, Bhaskaran Muralidharan, Milena Grifoni

Abstract: We present exact analytical results for the differential conductance of a finite Kitaev chain in an N-S-N configuration, where the topological superconductor is contacted on both sides with normal leads. Our results are obtained with the Keldysh non-equilibrium Green's functions technique, using the full spectrum of the Kitaev chain without resorting to minimal models. A closed formula for the lin… ▽ More We present exact analytical results for the differential conductance of a finite Kitaev chain in an N-S-N configuration, where the topological superconductor is contacted on both sides with normal leads. Our results are obtained with the Keldysh non-equilibrium Green's functions technique, using the full spectrum of the Kitaev chain without resorting to minimal models. A closed formula for the linear conductance is given, and the analytical procedure to obtain the differential conductance for the transport mediated by higher excitations is described. The linear conductance attains the maximum value of $e^2/h$ only for the exact zero energy states. Also the differential conductance exhibits a complex pattern created by numerous crossings and anticrossings in the excitation spectrum. We reveal the crossings to be protected by the inversion symmetry, while the anticrossings result from a pairing-induced hybridization of particle-like and hole-like solutions with the same inversion character. Our comprehensive treatment of the Kitaev chain allows us also to identify the contributions of both local and non-local transmission processes to transport at arbitrary bias voltage. Local Andreev reflection processes dominate the transport within the bulk gap and diminish for higher excited states, but reemerge when the bias voltage probes the avoided crossings. The non-local direct transmission is enhanced above the bulk gap, but contributes also to the transport mediated by the topological states. △ Less

Submitted 5 February, 2021; v1 submitted 29 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. B 103, 165432 (2021)

Comprehensive studies on steady-state and transient electronic transport in In0.52Al0.48As

Authors: Anup Kumar Mandia, Bhaskaran Muralidharan, Seung Cheol Lee, Satadeep Bhattacharjee

Abstract: High electron mobility transistors (HEMT) built using In\textsubscript{0.52}Al\textsubscript{0.48}As/In\textsubscript{0.53}Ga\textsubscript{0.47}As on InP substrates are a focus of considerable experimental studies due to their favourable performance for microwave, optical and digital applications. We present a detailed and comprehensive study of steady state and transient electronic transport in… ▽ More High electron mobility transistors (HEMT) built using In\textsubscript{0.52}Al\textsubscript{0.48}As/In\textsubscript{0.53}Ga\textsubscript{0.47}As on InP substrates are a focus of considerable experimental studies due to their favourable performance for microwave, optical and digital applications. We present a detailed and comprehensive study of steady state and transient electronic transport in In\textsubscript{0.52}Al\textsubscript{0.48}As with the three valley model using the semi-classical ensemble Monte Carlo method and including all important scattering mechanisms. All electronic transport parameters such drift velocity, valley occupation, average electron energy, ionization coefficient and generation rate, electron effective mass, diffusion coefficient, energy and momentum relaxation time are extracted rigorously from the simulations. Using these, we present a complete characterization of the transient electronic transport showing the variation of drift velocity with distance and time. We have then estimated the optimal cut-off frequencies for various device lengths via the velocity overshoot effect. Our analysis shows that for device lengths shorter than $700$ nm, transient effects are significant and should be taken into account for optimal device designs. As a critical example, at length scales of around $100$ nm, we obtain a significant improvement in the cut-off frequency from $261$ GHz to $663$ GHz with the inclusion of transient effects. The field dependence of all extracted parameters here can prove to be helpful for further device analysis and design. △ Less

Submitted 14 August, 2020; originally announced August 2020.

Aharonov-Bohm interference as a probe of Majorana fermions

Authors: T. C. Bartolo, J. S. Smith, B. Muralidharan, C. Müller, T. M. Stace, J. H. Cole

Abstract: Majorana fermions act as their own antiparticle, and they have long been thought to be confined to the realm of pure theory. However, interest in them has recently resurfaced, as it was realized through the work of Kitaev that some experimentally accessible condensed matter systems can host these exotic excitations as bound states on the boundaries of 1D chains, and that their topological and non-… ▽ More Majorana fermions act as their own antiparticle, and they have long been thought to be confined to the realm of pure theory. However, interest in them has recently resurfaced, as it was realized through the work of Kitaev that some experimentally accessible condensed matter systems can host these exotic excitations as bound states on the boundaries of 1D chains, and that their topological and non-abelian nature holds promise for quantum computation. Unambiguously detecting the experimental signatures of Majorana bound states has turned out to be challenging, as many other phenomena lead to similar experimental behaviour. Here, we computationally study a ring comprised of two Kitaev model chains with tunnel coupling between them, where an applied magnetic field allows for Aharonov-Bohm interference in transport through the resulting ring structure. We use a non-equilibrium Green's function technique to analyse the transport properties of the ring in both the presence and absence of Majorana zero modes. Further, we show that these results are robust against weak disorder in the presence of an applied magnetic field. This computational model suggests another signature for the presence of these topologically protected bound states can be found in the magnetic field dependence of devices with loop geometries. △ Less

Submitted 13 August, 2021; v1 submitted 28 June, 2020; originally announced June 2020.

Comments: 12 pages, 10 figures. Included new section about disorder in the nanowires and the effect of this on our results

Journal ref: Phys. Rev. Research 2, 043430 (2020)

Proposal for a graphene based nano-electro-mechanical reference piezoresistor

Authors: Abhinaba Sinha, Abhishek Sharma, Pankaj Priyadarshi, Ashwin Tulapurkar, Bhaskaran Muralidharan

Abstract: Motivated by the recent prediction of anisotropy in piezoresistance of ballistic graphene along longitudinal and transverse directions, we investigate the angular gauge factor of graphene in the ballistic and diffusive regimes using highly efficient quantum transport models. It is shown that the angular guage factor in both ballistic and diffusive graphene between $0^{\circ}$ to $90^{\circ}$ bears… ▽ More Motivated by the recent prediction of anisotropy in piezoresistance of ballistic graphene along longitudinal and transverse directions, we investigate the angular gauge factor of graphene in the ballistic and diffusive regimes using highly efficient quantum transport models. It is shown that the angular guage factor in both ballistic and diffusive graphene between $0^{\circ}$ to $90^{\circ}$ bears a sinusoidal relation with a periodicity of $π$ due to the reduction of six-fold symmetry into a two-fold symmetry as a result of applied strain. The angular gauge factor is zero at critical angles $20^{\circ}$ and $56^{\circ}$ in ballistic and diffusive regimes respectively. Based on these findings, we propose a graphene based ballistic nano-sensor which can be used as a reference piezoresistor in a Wheatstone bridge read-out technique. The reference sensors proposed here are unsusceptible to inherent residual strain present in strain sensors and unwanted strain generated by the vapours in explosives detection. The theoretical models developed in this paper can be applied to explore similar applications in other 2D-Dirac materials. The proposals made here potentially pave the way for implementation of NEMS strain sensors based on the principle of ballistic transport, which will eventually replace MEMS piezoresistance sensors with a decrease in feature size. The presence of strain insenstive ``critical angle'' in graphene may be useful in flexible wearable electronics also. △ Less

Submitted 27 June, 2020; originally announced June 2020.

Thermoelectric figure of merit enhancement in dissipative superlattice structures

Authors: Pankaj Priyadarshi, Bhaskaran Muralidharan

Abstract: Utilizing the non-coherent quantum transport formalism, we investigate thermoelectric performance across dissipative superlattice configurations in the linear regime of operation. Using the {\it{dissipative}} non-equilibrium Green's function formalism coupled self-consistently with the Poisson's equation, we report an enhanced figure of merit $zT$ in the multi-barrier device designs. The proposed… ▽ More Utilizing the non-coherent quantum transport formalism, we investigate thermoelectric performance across dissipative superlattice configurations in the linear regime of operation. Using the {\it{dissipative}} non-equilibrium Green's function formalism coupled self-consistently with the Poisson's equation, we report an enhanced figure of merit $zT$ in the multi-barrier device designs. The proposed enhancement, we show, is a result of a drastic reduction in the electronic thermal conductance triggered via non-coherent transport. We show that a maximum $zT$ value of 18 can be achieved via the inclusion of non-coherent elastic scattering processes. There is also a reasonable enhancement in the Seebeck coefficient, with a maximum of $1000~μV/K$, which we attribute to an enhancement in electronic filtering arising from the non-coherent transport. Distinctly the thermal conduction is drastically reduced as the length of the superlattice scales up, although the power factor shows an overall degradation. While the presence of interfaces is known to kill phonon thermal conduction, our analysis shows that non-coherent processes in superlattice structures can effectively kill electronic thermal conduction also. We believe that the analysis presented here could set the stage to understand better the interplay between non-coherent scattering and coherent quantum processes in the electronic engineering of heterostructure thermoelectric devices. △ Less

Submitted 27 June, 2020; originally announced June 2020.

Three terminal vibron coupled hybrid quantum dot thermoelectric refrigeration

Authors: Swarnadip Mukherjee, Bitan De, Bhaskaran Muralidharan

Abstract: A three terminal nanoscale refrigeration concept based on a vibron-coupled quantum dot hybrid system coupled to two electronic reservoirs and a phonon bath is proposed and analyzed in detail. While investigating the non-trivial role of electron-phonon interactions, we show that, although they are well known to be detrimental from a general refrigeration perspective, can be engineered to favorably… ▽ More A three terminal nanoscale refrigeration concept based on a vibron-coupled quantum dot hybrid system coupled to two electronic reservoirs and a phonon bath is proposed and analyzed in detail. While investigating the non-trivial role of electron-phonon interactions, we show that, although they are well known to be detrimental from a general refrigeration perspective, can be engineered to favorably improve the trade-off between the cooling power (CP) and the coefficient-of-performance (COP). Furthermore, an additional improvement in the trade-off can be facilitated by applying a high electronic thermal bias. However, the allowed maximum of the thermal bias being strongly limited by the electron-phonon coupling, in turn, determines the lowest achievable temperature of the cooled body. It is further demonstrated that such interactions drive a phonon flow between the dot and bath whose direction and magnitude depend on the temperature difference between the dot and bath. To justify its impact in optimizing the peak CP and COP, we show that a weak coupling with the bath is preferable when the phonons relax through it and a strong coupling is suitable in the opposite case when the phonons are extracted from the bath. Finally, in studying the effect of asymmetry in electronic couplings, we show that a stronger coupling is favorable with the contact whose temperature is closer to that of the bath. Combining these aspects, we believe that this study could offer important guidelines for a possible realization of molecular and quantum dot thermoelectric refrigerator. △ Less

Submitted 1 October, 2020; v1 submitted 27 April, 2020; originally announced April 2020.

Semi-classical electronic transport properties of ternary compound AlGaAs$_2$: Role of different scattering mechanisms

Authors: Soubhik Chakrabarty, Anup Kumar Mandia, Bhaskaran Muralidharan, Seung Cheol Lee, Satadeep Bhattacharjee

Abstract: We present a comprehensive investigation of semi-classical transport properties of n-type ternary compound AlGaAs2, using Rode's iterative method. Four scattering mechanisms, have been included in our transport calculation, namely, ionized impurity, piezoelectric, acoustic deformation and polar optical phonon (POP). The scattering rates have been calculated in terms of ab-initio parameters. We con… ▽ More We present a comprehensive investigation of semi-classical transport properties of n-type ternary compound AlGaAs2, using Rode's iterative method. Four scattering mechanisms, have been included in our transport calculation, namely, ionized impurity, piezoelectric, acoustic deformation and polar optical phonon (POP). The scattering rates have been calculated in terms of ab-initio parameters. We consider AlGaAs2 to have two distinct crystal geometries, one in tetragonal phase (space group: ), while the other one having body centered tetragonal crystal structure (space group:). We have observed higher electron mobility in the body centered tetragonal phase, thereby making it more suitable for high mobility device application, over the tetragonal phase. In order to understand the differences in electron moblities for these two phases, curvatures of the E-k graph of the conduction bands for these phases have been compared. At room temperature, the dominant contribution in electron mobility was found to be provided by inelastic POP scattering. We have also noted that mobility is underestimated in relaxation time approximation as compared with the Rode's iterative approach. △ Less

Submitted 27 September, 2019; originally announced September 2019.

Exact eigenvectors and eigenvalues of the finite Kitaev chain and its topological properties

Authors: Nico Leumer, Magdalena Marganska, Bhaskaran Muralidharan, Milena Grifoni

Abstract: We present a comprehensive, analytical treatment of the finite Kitaev chain for arbitrary chemical potential. We derive the momentum quantization conditions and present exact analytical formulae for the resulting energy spectrum and eigenstate wave functions, encompassing boundary and bulk states. In accordance with an analysis based on the winding number topological invariant, and as expected fro… ▽ More We present a comprehensive, analytical treatment of the finite Kitaev chain for arbitrary chemical potential. We derive the momentum quantization conditions and present exact analytical formulae for the resulting energy spectrum and eigenstate wave functions, encompassing boundary and bulk states. In accordance with an analysis based on the winding number topological invariant, and as expected from the bulk-edge correspondence, the boundary states are topological in nature. They can have zero, exponentially small or even finite energy. A numerical analysis confirms their robustness against disorder. △ Less

Submitted 30 April, 2020; v1 submitted 24 September, 2019; originally announced September 2019.

Enhancement of Thermal Spin Transfer Torque via Bandpass Energy Filtering

Authors: Pankaj Priyadarshi, Abhishek Sharma, Bhaskaran Muralidharan

Abstract: We propose the use of energy bandpass filtering approach in the magnetic tunnel junction device as a route to enhance the thermal spin transfer torque. Using the spin-resolved non-equilibrium Green's function formalism, we harness the optical analog of anti-reflective coating in a heterostructure MTJ device, that reports a huge spin torque in the linear regime of temperature bias. In particular, w… ▽ More We propose the use of energy bandpass filtering approach in the magnetic tunnel junction device as a route to enhance the thermal spin transfer torque. Using the spin-resolved non-equilibrium Green's function formalism, we harness the optical analog of anti-reflective coating in a heterostructure MTJ device, that reports a huge spin torque in the linear regime of temperature bias. In particular, we discuss the position of transmission function with respect to the Fermi energy that caters the maximum thermal effect. The boxcar transmission feature of anti-reflective configuration enhances the charge and spin transport through the structure in comparison to the normal superlattice configurations. The thermally excited spin transfer torque is enhanced by almost five times more with our device design. Although, the thermally driven spin torque is much smaller than the potential driven torque, this technique provides an energy-efficient way to switch the magnetization. This opens up a new viable area in the spintronics applications. With the existing advanced thin-film growth technology, the optimized superlattice configurations can be achieved. △ Less

Submitted 19 August, 2019; originally announced August 2019.

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory

Authors: Abhishek Sharma, Ashwin Tulapurkar, Bhaskaran Muralidharan

Abstract: We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as anti-reflection coating and resonance for spintronic devices, we present the design of an STT-MRAM device with improved features when compared with a traditional tril… ▽ More We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as anti-reflection coating and resonance for spintronic devices, we present the design of an STT-MRAM device with improved features when compared with a traditional trilayer device. The device consists of a superlattice heterostructure terminated with the anti-reflective regions sandwiched between the fixed and free ferromagnetic layers. Employing the Green's function spin transport formalism coupled self-consistently with the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation, we present the design of an STT-MRAM based on the band-pass filtering having an ultra-high TMR (3.5*10e4) and large spin current. We demonstrate that the STT-MRAM design having band-pass spin filtering are nearly 1100% more energy efficient than traditional trilayer magnetic tunnel junction (MTJ) based STT-MRAM. We also present detailed probabilistic switching and energy analysis for a trilayer MTJ and band-pass filtering based STT-MRAM. Our predictions serve as a template to consider the heterostructures for next-generation spintronic device applications. △ Less

Submitted 17 August, 2019; originally announced August 2019.

Superlattice design for optimal thermoelectric generator performance

Authors: Pankaj Priyadarshi, Abhishek Sharma, Swarnadip Mukherjee, Bhaskaran Muralidharan

Abstract: We consider the design of an optimal superlattice thermoelectric generator via the energy bandpass filter approach. Various configurations of superlattice structures are explored to obtain a bandpass transmission spectrum that approaches the ideal ``boxcar'' form, which is now well known to manifest the largest efficiency at a given output power. Using the non-equilibrium Green's function formalis… ▽ More We consider the design of an optimal superlattice thermoelectric generator via the energy bandpass filter approach. Various configurations of superlattice structures are explored to obtain a bandpass transmission spectrum that approaches the ideal ``boxcar'' form, which is now well known to manifest the largest efficiency at a given output power. Using the non-equilibrium Green's function formalism coupled self-consistently with the Poisson's equation, we identify such an ideal structure and also demonstrate that it is almost immune to the deleterious effect of self-consistent charging and device variability. Analyzing various superlattice designs, we conclude that superlattices with a Gaussian distribution of the barrier thickness offers the best thermoelectric efficiency at maximum power. It is observed that the best operating regime of this device design provides a maximum power in the range of 0.32-0.46 $MW/m^2$ at efficiencies between 54\%-43\% of Carnot efficiency. We also analyze our device designs with the conventional figure of merit approach to counter support the results so obtained. We note a high $zT_{el}=6$ value in the case of Gaussian distribution of the barrier thickness. With the existing advanced thin-film growth technology, the suggested superlattice structures can be achieved, and such optimized thermoelectric performances can be realized. △ Less

Submitted 13 August, 2019; originally announced August 2019.

Journal ref: Journal of Physics D: Applied Physics 185301 (2018)

AMMCR: Ab-initio model for mobility and conductivity calculation by using Rode Algorithm

Authors: Anup Kumar Mandia, Bhaskaran Muralidharan, Jung-Hae Choi, Seung-Cheol Lee, Satadeep Bhattacharjee

Abstract: We present a module to calculate the mobility and conductivity of semi-conducting materials using Rode's algorithm. This module uses a variety of electronic structure inputs derived from the Density Functional Theory (DFT). We have demonstrated good agreement with experimental results for the case of Cadmium Sulfide (CdS). We also provide a comparison with the widely used method, the so called Rel… ▽ More We present a module to calculate the mobility and conductivity of semi-conducting materials using Rode's algorithm. This module uses a variety of electronic structure inputs derived from the Density Functional Theory (DFT). We have demonstrated good agreement with experimental results for the case of Cadmium Sulfide (CdS). We also provide a comparison with the widely used method, the so called Relaxation Time Approximation (RTA) and demonstrated the improvisation of the results compared to RTA. The present version of the module is interfaced with Vienna ab-initio simulation package (VASP). △ Less

Submitted 23 May, 2020; v1 submitted 18 July, 2019; originally announced July 2019.

Giant enhancement of Piezo-resistance in ballistic graphene due to transverse electric fields

Authors: Abhinaba Sinha, Abhishek Sharma, Ashwin Tulapurkar, V Ramgopal Rao, Bhaskaran Muralidharan

Abstract: We investigate the longitudinal and transverse piezoresistance effect in suspended graphene in the ballistic regime. Utilizing parametrized tight binding Hamiltonian from ab initio calculations along with Landauer quantum transport formalism, we devise a methodology to evaluate the piezoresistance effect in 2D materials especially in graphene. We evaluate the longitudinal and transverse gauge fact… ▽ More We investigate the longitudinal and transverse piezoresistance effect in suspended graphene in the ballistic regime. Utilizing parametrized tight binding Hamiltonian from ab initio calculations along with Landauer quantum transport formalism, we devise a methodology to evaluate the piezoresistance effect in 2D materials especially in graphene. We evaluate the longitudinal and transverse gauge factor of graphene along armchair and zigzag directions in the linear elastic limit ($0\%$-$10\%$). The longitudinal and transverse gauge factors are identical along armchair and zigzag directions. Our model predicts a significant variation ($\approx 1000\% $ change) in transverse gauge factor compared to longitudinal gauge factor along with sign inversion. The calculated value of longitudinal gauge factor is $\approx 0.3$ whereas the transverse gauge factor is $\approx -3.3$. We rationalize our prediction using deformation of Dirac cone and change in separation between transverse modes due to longitudinal and transverse strain, leading to an inverse change in gauge factor. The results obtained herein may serve as a template for high strain piezoresistance effect of graphene in nano electromechanical systems. △ Less

Submitted 5 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. Materials 3, 124005 (2019)

Quantum thermoelectrics based on 2-D Semi-Dirac materials

Authors: Alestin Mawrie, Bhaskaran Muralidharan

Abstract: We show that a gap parameter can fully describe the merging of Dirac cones in semi-Dirac materials from $K$- and $K^\prime$-points into the common $M$-point in the Brillouin zone. We predict that the gap parameter manifests itself by enhancing the thermoelectric figure of merit $zT$ as the chemical potential crosses the gap followed by a sign change in the Seebeck coefficient around the same point… ▽ More We show that a gap parameter can fully describe the merging of Dirac cones in semi-Dirac materials from $K$- and $K^\prime$-points into the common $M$-point in the Brillouin zone. We predict that the gap parameter manifests itself by enhancing the thermoelectric figure of merit $zT$ as the chemical potential crosses the gap followed by a sign change in the Seebeck coefficient around the same point. Subsequently, we show that there is also a trade-off feature between the maximum power delivered and the efficiency when the chemical potential crosses the gap parameter. An optimal operating point that minimizes the power-efficiency trade-off is consequently singled out for the best thermoelectric performance. Our work paves the way for the use of 2D semi-Dirac materials for thermoelectric applications. △ Less

Submitted 8 August, 2019; v1 submitted 27 May, 2019; originally announced May 2019.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 100, 081403 (2019)