Showing 1–3 of 3 results for author: Munteanu, F M

Photoluminescence Detected Doublet Structure in the Integer and Fractional Quantum Hall Regime

Authors: F. M. Munteanu, Yongmin Kim, C. H. Perry, D. G. Rickel, J. A. Simmons, J. L. Reno

Abstract: We present here the results of polarized magneto-photoluminescence measurements on a high mobility single-heterojunction. The presence of a doublet structure over a large magnetic field range (2>nu>1/6) is interpreted as possible evidence for the existence of a magneto-roton minima of the charged density waves. This is understood as an indication of strong electronic correlation even in the case… ▽ More We present here the results of polarized magneto-photoluminescence measurements on a high mobility single-heterojunction. The presence of a doublet structure over a large magnetic field range (2>nu>1/6) is interpreted as possible evidence for the existence of a magneto-roton minima of the charged density waves. This is understood as an indication of strong electronic correlation even in the case of the IQHE limit. △ Less

Submitted 25 May, 1999; originally announced May 1999.

Comments: submitted to Solid State Communications

Magnetic Field Induced Charged Exciton Studies in a GaAs/Al(0.3)Ga(0.7)As Single Heterojunction

Authors: F. M. Munteanu, Yongmin Kim, C. H. Perry, D. G. Rickel J. A. Simmons, J. L. Reno

Abstract: The magnetophotoluminescence (MPL) behavior of a GaAs/Al(0.3)Ga(0.7)As single heterojunction has been investigated to 60T. We observed negatively charged singlet and triplet exciton states that are formed at high magnetic fields beyond the nu=1 quantum Hall state. The variation of the charged exciton binding energies are in good agreement with theoretical predictions. The MPL transition intensit… ▽ More The magnetophotoluminescence (MPL) behavior of a GaAs/Al(0.3)Ga(0.7)As single heterojunction has been investigated to 60T. We observed negatively charged singlet and triplet exciton states that are formed at high magnetic fields beyond the nu=1 quantum Hall state. The variation of the charged exciton binding energies are in good agreement with theoretical predictions. The MPL transition intensities for these states showed intensity variations (maxima and minima) at the nu=1/3 and 1/5 fractional quantum Hall (FQH) state as a consequence of a large reduction of electron-hole screening at these filling factors. △ Less

Submitted 19 May, 1999; originally announced May 1999.

Comments: submitted to Phys. Rev. Lett

Coulomb Driven New Bound States at the Integer Quantum Hall States in GaAs/Al(0.3)Ga(0.7)As Single Heterojunctions

Authors: Yongmin Kim, F. M. Munteanu, C. H. Perry, X. Lee, H. W. Jiang, J. A. Simmons, Kyu-Seok Lee

Abstract: Coulomb driven, magneto-optically induced electron and hole bound states from a series of heavily doped GaAs/Al(0.3)Ga(0.7)As single heterojunctions (SHJ) are revealed in high magnetic fields. At low magnetic fields (nu > 2), the photoluminescence spectra display Shubnikov de-Haas type oscillations associated with the empty second subband transition. In the regime of the Landau filling factor nu… ▽ More Coulomb driven, magneto-optically induced electron and hole bound states from a series of heavily doped GaAs/Al(0.3)Ga(0.7)As single heterojunctions (SHJ) are revealed in high magnetic fields. At low magnetic fields (nu > 2), the photoluminescence spectra display Shubnikov de-Haas type oscillations associated with the empty second subband transition. In the regime of the Landau filling factor nu < 1 and 1 < nu <2, we found strong bound states due to Mott type localizations. Since a SHJ has an open valence band structure, these bound states are a unique property of the dynamic movement of the valence holes in strong magnetic fields. △ Less

Submitted 19 May, 1999; v1 submitted 17 May, 1999; originally announced May 1999.