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Showing 1–4 of 4 results for author: Munson, K

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  1. arXiv:2406.10320  [pdf, other

    cs.SE cs.AI

    Out of style: Misadventures with LLMs and code style transfer

    Authors: Karl Munson, Chih-Kai Ting, Serenity Wade, Anish Savla, Julian Dolby, Kiran Kate, Kavitha Srinivas

    Abstract: Like text, programs have styles, and certain programming styles are more desirable than others for program readability, maintainability, and performance. Code style transfer, however, is difficult to automate except for trivial style guidelines such as limits on line length. Inspired by the success of using language models for text style transfer, we investigate if code language models can perform… ▽ More

    Submitted 14 June, 2024; originally announced June 2024.

  2. arXiv:2312.17304  [pdf

    cond-mat.mtrl-sci

    Influence of Rhenium Concentration on Charge Do** and Defect Formation in MoS2

    Authors: Kyle T. Munson, Riccardo Torsi, Fatimah Habis, Lysander Huberich, Yu-Chuan Lin, Yue Yuan, Ke Wang, Bruno Schuler, Yuanxi Wang, John B. Asbury, Joshua A. Robinson

    Abstract: Substitutionally doped transition metal dichalcogenides (TMDs) are the next step towards realizing TMD-based field effect transistors, sensors, and quantum photonic devices. Here, we report on the influence of Re concentration on charge do** and defect formation in MoS2 monolayers grown by metal-organic chemical vapor deposition. Re-MoS2 films can exhibit reduced sulfur-site defects; however, as… ▽ More

    Submitted 3 January, 2024; v1 submitted 28 December, 2023; originally announced December 2023.

    Comments: 19 pages, 5 figures

  3. arXiv:2302.00110  [pdf

    cond-mat.mtrl-sci

    Dilute Rhenium Do** and its Impact on Intrinsic Defects in MoS2

    Authors: Riccardo Torsi, Kyle T. Munson, Rahul Pendurthi, Esteban A. Marques, Benoit Van Troeye, Lysander Huberich, Bruno Schuler, Maxwell A. Feidler, Ke Wang, Geoffrey Pourtois, Saptarshi Das, John B. Asbury, Yu-Chuan Lin, Joshua A. Robinson

    Abstract: Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium (Re) do** of MoS2 monolayers with controllable concentrations down to 500 parts-per-million (ppm) by metal-organic chemical vapor deposition (MOCVD). Surprisi… ▽ More

    Submitted 31 January, 2023; originally announced February 2023.

    Comments: 20 pages, 5 figures

  4. arXiv:2209.06273  [pdf, other

    cs.CL

    Exploring Code Style Transfer with Neural Networks

    Authors: Karl Munson, Anish Savla, Chih-Kai Ting, Serenity Wade, Kiran Kate, Kavitha Srinivas

    Abstract: Style is a significant component of natural language text, reflecting a change in the tone of text while kee** the underlying information the same. Even though programming languages have strict syntax rules, they also have style. Code can be written with the same functionality but using different language features. However, programming style is difficult to quantify, and thus as part of this wor… ▽ More

    Submitted 13 September, 2022; originally announced September 2022.