Showing 1–23 of 23 results for author: Munroe, P

Direct x-ray scattering signal measurements in edge-illumination/beam-tracking imaging and their interplay with the variance of the refraction signals

Authors: Ian Buchanan, Silvia Cipiccia, Carlo Peiffer, Carlos Navarrete-León, Alberto Astolfo, Tom Partridge, Michela Esposito, Luca Fardin, Alberto Bravin, Charlotte K Hagen, Marco Endrizzi, Peter RT Munro, David Bate, Alessandro Olivo

Abstract: X-ray dark-field or ultra-small angle scatter imaging has become increasingly important since the introduction of phase-based x-ray imaging and is having transformative impact in fields such as in vivo lung imaging and explosives detection. Here we show that dark-field images acquired with the edge-illumination method (either in its traditional double mask or simplified single mask implementation)… ▽ More X-ray dark-field or ultra-small angle scatter imaging has become increasingly important since the introduction of phase-based x-ray imaging and is having transformative impact in fields such as in vivo lung imaging and explosives detection. Here we show that dark-field images acquired with the edge-illumination method (either in its traditional double mask or simplified single mask implementation) provide a direct measurement of the scattering function, which is unaffected by system-specific parameters such as the autocorrelation length. We show that this is a consequence both of the specific measurement setup and of the mathematical approach followed to retrieve the dark-field images. We show agreement with theoretical models for datasets acquired both with synchrotron and laboratory x-ray sources. We also introduce a new contrast mechanism, the variance of refraction, which is extracted from the same dataset and provides a direct link with the size of the scattering centres. We show that this can also be described by the same theoretical models. We study the behaviour of both signals vs. key parameters such as x-ray energy and scatterer radius. We find this allows quantitative, direct, multi-scale scattering measurements during imaging, with implications in all fields where dark-field imaging is used. △ Less

Submitted 12 July, 2023; originally announced July 2023.

Comments: 18 pages, 5 main figures, 6 extended data figures

Fabrication of High-Aspect Ratio Nanogratings for Phase-based X-ray Imaging

Authors: Martyna Michalska, Alessandro Rossi, Gasper Kokot, Callum M. Macdonald, Silvia Cipiccia, Peter R. T. Munro, Alessandro Olivo, Ioannis Papakonstantinou

Abstract: Diffractive optical elements such as periodic gratings are fundamental devices in X-ray imaging - a technique that medical, material science and security scans rely upon. Fabrication of such structures with high aspect ratios at the nanoscale creates opportunities to further advance such applications, especially in terms of relaxing X-ray source coherence requirements. This is because typical grat… ▽ More Diffractive optical elements such as periodic gratings are fundamental devices in X-ray imaging - a technique that medical, material science and security scans rely upon. Fabrication of such structures with high aspect ratios at the nanoscale creates opportunities to further advance such applications, especially in terms of relaxing X-ray source coherence requirements. This is because typical grating-based X-ray phase imaging techniques (e.g., Talbot self-imaging) require a coherence length of at least one grating period and ideally longer. In this paper, the fabrication challenges in achieving high aspect-ratio nanogratings filled with gold are addressed by a combination of laser interference and nanoimprint lithography, physical vapor deposition, metal assisted chemical etching (MACE), and electroplating. This relatively simple and cost-efficient approach is unlocked by an innovative post-MACE drying step with hexamethyldisilazane, which effectively minimizes the stiction of the nanostructures. The theoretical limits of the approach are discussed and, experimentally, X-ray nanogratings with aspect ratios >40 demonstrated. Finally, their excellent diffractive abilities are shown when exposed to a hard (12.2 keV) monochromatic x-ray beam at a synchrotron facility, and thus potential applicability in phase-based X-ray imaging. △ Less

Submitted 31 October, 2022; originally announced November 2022.

Comments: 27 pages, 5 figures in main text, plus supporting information

Deviations in Representations Induced by Adversarial Attacks

Authors: Daniel Steinberg, Paul Munro

Abstract: Deep learning has been a popular topic and has achieved success in many areas. It has drawn the attention of researchers and machine learning practitioners alike, with developed models deployed to a variety of settings. Along with its achievements, research has shown that deep learning models are vulnerable to adversarial attacks. This finding brought about a new direction in research, whereby alg… ▽ More Deep learning has been a popular topic and has achieved success in many areas. It has drawn the attention of researchers and machine learning practitioners alike, with developed models deployed to a variety of settings. Along with its achievements, research has shown that deep learning models are vulnerable to adversarial attacks. This finding brought about a new direction in research, whereby algorithms were developed to attack and defend vulnerable networks. Our interest is in understanding how these attacks effect change on the intermediate representations of deep learning models. We present a method for measuring and analyzing the deviations in representations induced by adversarial attacks, progressively across a selected set of layers. Experiments are conducted using an assortment of attack algorithms, on the CIFAR-10 dataset, with plots created to visualize the impact of adversarial attacks across different layers in a network. △ Less

Submitted 7 November, 2022; originally announced November 2022.

Measuring the Contribution of Multiple Model Representations in Detecting Adversarial Instances

Authors: Daniel Steinberg, Paul Munro

Abstract: Deep learning models have been used for a wide variety of tasks. They are prevalent in computer vision, natural language processing, speech recognition, and other areas. While these models have worked well under many scenarios, it has been shown that they are vulnerable to adversarial attacks. This has led to a proliferation of research into ways that such attacks could be identified and/or defend… ▽ More Deep learning models have been used for a wide variety of tasks. They are prevalent in computer vision, natural language processing, speech recognition, and other areas. While these models have worked well under many scenarios, it has been shown that they are vulnerable to adversarial attacks. This has led to a proliferation of research into ways that such attacks could be identified and/or defended against. Our goal is to explore the contribution that can be attributed to using multiple underlying models for the purpose of adversarial instance detection. Our paper describes two approaches that incorporate representations from multiple models for detecting adversarial examples. We devise controlled experiments for measuring the detection impact of incrementally utilizing additional models. For many of the scenarios we consider, the results show that performance increases with the number of underlying models used for extracting representations. △ Less

Submitted 11 February, 2022; v1 submitted 12 November, 2021; originally announced November 2021.

Comments: Correction: replaced "model-wise" with "unit-wise" in the first sentence of Section 3.2

Visualizing Representations of Adversarially Perturbed Inputs

Authors: Daniel Steinberg, Paul Munro

Abstract: It has been shown that deep learning models are vulnerable to adversarial attacks. We seek to further understand the consequence of such attacks on the intermediate activations of neural networks. We present an evaluation metric, POP-N, which scores the effectiveness of projecting data to N dimensions under the context of visualizing representations of adversarially perturbed inputs. We conduct ex… ▽ More It has been shown that deep learning models are vulnerable to adversarial attacks. We seek to further understand the consequence of such attacks on the intermediate activations of neural networks. We present an evaluation metric, POP-N, which scores the effectiveness of projecting data to N dimensions under the context of visualizing representations of adversarially perturbed inputs. We conduct experiments on CIFAR-10 to compare the POP-2 score of several dimensionality reduction algorithms across various adversarial attacks. Finally, we utilize the 2D data corresponding to high POP-2 scores to generate example visualizations. △ Less

Submitted 28 May, 2021; originally announced May 2021.

Modeling the Evolution of Retina Neural Network

Authors: Ziyi Gong, Paul Munro

Abstract: Vital to primary visual processing, retinal circuitry shows many similar structures across a very broad array of species, both vertebrate and non-vertebrate, especially functional components such as lateral inhibition. This surprisingly conservative pattern raises a question of how evolution leads to it, and whether there is any alternative that can also prompt helpful preprocessing. Here we desig… ▽ More Vital to primary visual processing, retinal circuitry shows many similar structures across a very broad array of species, both vertebrate and non-vertebrate, especially functional components such as lateral inhibition. This surprisingly conservative pattern raises a question of how evolution leads to it, and whether there is any alternative that can also prompt helpful preprocessing. Here we design a method using genetic algorithm that, with many degrees of freedom, leads to architectures whose functions are similar to biological retina, as well as effective alternatives that are different in structures and functions. We compare this model to natural evolution and discuss how our framework can come into goal-driven search and sustainable enhancement of neural network models in machine learning. △ Less

Submitted 19 February, 2021; v1 submitted 24 November, 2020; originally announced November 2020.

Optimal compressive multiphoton imaging at depth using single-pixel detection

Authors: Philip Wijesinghe, Adrià Escobet-Montalbán, Mingzhou Chen, Peter R T Munro, Kishan Dholakia

Abstract: Compressive sensing can overcome the Nyquist criterion and record images with a fraction of the usual number of measurements required. However, conventional measurement bases are susceptible to diffraction and scattering, prevalent in high-resolution microscopy. Here, we explore the random Morlet basis as an optimal set for compressive multiphoton imaging, based on its ability to minimise the spac… ▽ More Compressive sensing can overcome the Nyquist criterion and record images with a fraction of the usual number of measurements required. However, conventional measurement bases are susceptible to diffraction and scattering, prevalent in high-resolution microscopy. Here, we explore the random Morlet basis as an optimal set for compressive multiphoton imaging, based on its ability to minimise the space-frequency uncertainty. We implement this approach for the newly developed method of wide-field multiphoton microscopy with single-pixel detection (TRAFIX), which allows imaging through turbid media without correction. The Morlet basis is well-suited to TRAFIX at depth, and promises a route for rapid acquisition with low photodamage. △ Less

Submitted 4 July, 2019; originally announced July 2019.

Defect thermodynamics and kinetics in thin strained ferroelectric films: the interplay of possible mechanisms

Authors: Anna N. Morozovska, Eugene A. Eliseev, P. S. Sankara Rama Krishnan, Alexander Tselev, Evgheny Strelkov, Albina Borisevich, Olexander V. Varenyk, Nicola V. Morozovsky, Paul Munroe, Sergei V. Kalinin, Valanoor Nagarajan

Abstract: We present a theoretical description of the influence of misfit strain on mobile defects dynamics in thin strained ferroelectric films. Self-consistent solutions obtained by coupling the Poissons equation for electric potential with continuity equations for mobile donor and electron concentrations and time-dependent Landau-Ginzburg-Devonshire equations reveal that the Vegard mechanism (chemical pr… ▽ More We present a theoretical description of the influence of misfit strain on mobile defects dynamics in thin strained ferroelectric films. Self-consistent solutions obtained by coupling the Poissons equation for electric potential with continuity equations for mobile donor and electron concentrations and time-dependent Landau-Ginzburg-Devonshire equations reveal that the Vegard mechanism (chemical pressure) leads to the redistribution of both charged and electro-neutral defects in order to decrease the effective stress in the film. Internal electric fields, both built-in and depolarization ones, lead to a strong accumulation of screening space charges (charged defects and electrons) near the film interfaces. Importantly, the corresponding screening length is governed by the misfit strain and Vegard coefficient. Mobile defects dynamics, kinetics of polarization and electric current reversal are defined by the complex interplay between the donor, electron and phonon relaxation times, misfit strain, finite size effect and Vegard stresses. △ Less

Submitted 13 November, 2013; originally announced November 2013.

Comments: 34 pages, 7 figures, supplementary materials

Journal ref: Phys. Rev. B 89, 054102 (2014)

Thermal strain-induced enhancement of electromagnetic properties in SiC-MgB2 composites

Authors: R. Zeng S. X. Dou, L. Lu, W. X. Li, J. H. Kim, P. Munroe, R. K. Zheng, S. P. Ringer

Abstract: Strain engineering has been used to modify materials properties in ferroelectric, superconducting, and ferromagnetic thin films. The advantage of strain engineering is that it can achieve unexpected enhancement in certain properties, such as an increase in ferroelectric critical temperature, Tc, by 300 to 500K, with a minimum detrimental effect on the intrinsic properties of the material. The st… ▽ More Strain engineering has been used to modify materials properties in ferroelectric, superconducting, and ferromagnetic thin films. The advantage of strain engineering is that it can achieve unexpected enhancement in certain properties, such as an increase in ferroelectric critical temperature, Tc, by 300 to 500K, with a minimum detrimental effect on the intrinsic properties of the material. The strain engineering has been largely applied to the materials in thin film form, where the strain is generated as a result of lattice mismatch between the substrate and component film or between layers in multilayer structures. Here, we report the observation of residual thermal stress/strain in dense SiC-MgB2 superconductor composites prepared by a diffusion method. We demonstrate that the thermal strain caused by the different thermal expansion coefficients between the MgB2 and SiC phases is responsible for the significant improvement in the critical current density, Jc, the irreversibility field, Hirr, and the upper critical field, Hc2, in the SiC-MgB2 composite where the carbon substitution level is low. In contrast to the common practice of improving the Jc and Hc2 of MgB2 through chemical substitution, by taking advantage of residual thermal strains we are able to design a composite, which shows only a small drop in Tc and little increase in resistivity, but a significant improvement over the Jc and Hc2 of MgB2. The present findings open up a new direction for manipulation of materials properties through strain engineering for materials in various forms. △ Less

Submitted 7 August, 2008; originally announced August 2008.

Complex phase mixture and domain superstructure across a new lead-free ferroelectric/anti-ferroelectric morphotropic phase boundary

Authors: C. -J. Cheng, S. H. Lim, S. Fu**o, W. R. McKenzie, V. Nagarajan, P. R. Munroe, I. Takeuchi, L. Salamanca-Riba, I. B. Misirlioglu

Abstract: We investigate the microstructural evolution in a ferroelectric to antiferroelectric phase transition at the morphotropic phase boundary in the Bi(1-x)SmxFeO3 system. Continuous Sm3+ substitution on the A-site induces short-range anti-parallel cation displacements as verified by the appearance of localized 1/4(110) weak spots in selected area electron diffraction patterns for 0.1<x<0.14 samples,… ▽ More We investigate the microstructural evolution in a ferroelectric to antiferroelectric phase transition at the morphotropic phase boundary in the Bi(1-x)SmxFeO3 system. Continuous Sm3+ substitution on the A-site induces short-range anti-parallel cation displacements as verified by the appearance of localized 1/4(110) weak spots in selected area electron diffraction patterns for 0.1<x<0.14 samples, and thus onset of antiferroelectricity. Kinetic Monte Carlo simulations confirm that increasing the strength of the anti-parallel interactions (i.e. increasing x) induces a ferroelectric to antiferroelectric transition. For 0.14<x<0.2 antiphase oxygen octahedra tilts induce complete antiferroelectricity. △ Less

Submitted 23 May, 2008; v1 submitted 5 March, 2008; originally announced March 2008.

Comments: withdrawn due to new results and journal requirements

Enhancement of in-field Jc in MgB2/Fe wire using single and multi-walled nanotubes

Authors: J. H. Kim, W. K. Yeoh, M. J. Qin, X. Xu, S. X. Dou, P. Munroe, H. Kumakura, T. Nakane, C. H. Jiang

Abstract: We investigated the do** effects of SWCNTs and MWCNTs on the Tc, lattice parameters, Jc(B), microstructure, and Hc2 of MgB2/Fe wire. These effects systematically showed the following sequence for Tc and the a-axis: the SWCNT doped wire < the MWshortCNT doped wire < the MWlongCNT doped wire < un-doped wire, while Jc(B) followed the sequence of the SWCNT doped wire > the MWshortCNT doped wire >… ▽ More We investigated the do** effects of SWCNTs and MWCNTs on the Tc, lattice parameters, Jc(B), microstructure, and Hc2 of MgB2/Fe wire. These effects systematically showed the following sequence for Tc and the a-axis: the SWCNT doped wire < the MWshortCNT doped wire < the MWlongCNT doped wire < un-doped wire, while Jc(B) followed the sequence of the SWCNT doped wire > the MWshortCNT doped wire > the MWlongCNT doped wire > un-doped wire. A dominating mechanism behind all these findings is the level of C substitution for B in the lattice. The best Jc(B) and Hc2 were obtained on SWCNT doped wire because the level of C substitution for B in this wire is higher than all others. △ Less

Submitted 21 July, 2006; originally announced July 2006.

Comments: 18 pages, 4 figures, 2 tables. accepted by applied physics letters

Alignment of Carbon Nanotube Additives for Improved Performance of Magnesium Diboride Superconductors

Authors: Shi Xue Dou, Waikong Yeoh, Olga Shcherbakova, David Wexler, Ying Li, Zhong M. Ren, Paul Munroe, Sookien Chen, Kaisin. Tan, Bartek A. Glowacki, Judith L. MacManus-Driscoll

Abstract: The rapid progress on MgB2 superconductor since its discovery[1] has made this material a strong competitor to low and high temperature superconductors (HTS) for applications with a great potential to catch the niche market such as in magnetic resonant imaging (MRI). Thanks to the lack of weak links and the two-gap superconductivity of MgB2 [2,3] a number of additives have been successfully used… ▽ More The rapid progress on MgB2 superconductor since its discovery[1] has made this material a strong competitor to low and high temperature superconductors (HTS) for applications with a great potential to catch the niche market such as in magnetic resonant imaging (MRI). Thanks to the lack of weak links and the two-gap superconductivity of MgB2 [2,3] a number of additives have been successfully used to enhance the critical current density, Jc and the upper critical field, Hc2.[4-12] Carbon nanotubes (CNTs) have unusually electrical, mechanical and thermal properties[13-16] and hence is an ideal component to fabricate composites for improving their performance. To take advantages of the extraordinary properties of CNTs it is important to align CNTs in the composites. Here we report a method of alignment of CNTs in the CNT/MgB2 superconductor composite wires through a readily scalable drawing technique. The aligned CNT doped MgB2 wires show an enhancement in magnetic Jc(H) by more than an order of magnitude in high magnetic fields, compared to the undoped ones. The CNTs have also significantly enhanced the heat transfer and dissipation. CNTs have been used mainly in structural materials, but here the advantage of their use in functional composites is shown and this has wider ramifications for other functional materials. △ Less

Submitted 21 February, 2006; originally announced February 2006.

Comments: 11 pages, 3 figures. to be published in Advanced Materials

Journal ref: Advanced Materials 18, 785 (2006)

Magnetic field processing to enhance critical current densities of MgB2 superconductors

Authors: S. X. Dou, W. K. Yeoh, O. Shcherbakova, J. Horvat, M. J. Qin, Y. Li, Z. M. Ren, P. Munroe

Abstract: Magnetic field of up to 12 T was applied during the sintering process of pure MgB2 and carbon nanotube (CNT) doped MgB2 wires. We have demonstrated that magnetic field processing results in grain refinement, homogeneity and significant enhancement in Jc(H) and Hirr. The Jc of pure MgB2 wire increased by up to a factor of 3 to 4 and CNT doped MgB2 by up to an order of magnitude in high field regi… ▽ More Magnetic field of up to 12 T was applied during the sintering process of pure MgB2 and carbon nanotube (CNT) doped MgB2 wires. We have demonstrated that magnetic field processing results in grain refinement, homogeneity and significant enhancement in Jc(H) and Hirr. The Jc of pure MgB2 wire increased by up to a factor of 3 to 4 and CNT doped MgB2 by up to an order of magnitude in high field region respectively, compared to that of the non-field processed samples. Hirr for CNT doped sample reached 7.7 T at 20 K. Magnetic field processing reduces the resistivity in CNT doped MgB2, straightens the entangled CNT and improves the adherence between CNTs and MgB2 matrix. No crystalline alignment of MgB2 was observed. This method can be easily scalable for a continuous production and represents a new milestone in the development of MgB2 superconductors and related systems. △ Less

Submitted 10 January, 2006; originally announced January 2006.

Stabilization of amorphous GaN by oxygen

Authors: F. Budde, B. J. Ruck, A. Koo, S. Granville, H. J. Trodahl, A. Bittar, G. V. M. Williams, M. J. Ariza, B. Bonnet, D. J. Jones, J. B. Metson, S. Rubanov, P. Munroe

Abstract: Ion assisted deposition (IAD) has been investigated for the growth of GaN, and the resulting films studied by x-ray diffraction and absorption spectroscopy and by transmission electron microscopy. IAD grown stoichiometric GaN consists of random-stacked quasicrystals of some 3 nm diameter. Amorphous material is formed only by incorporation of 15% or more oxygen, which we attribute to the presence… ▽ More Ion assisted deposition (IAD) has been investigated for the growth of GaN, and the resulting films studied by x-ray diffraction and absorption spectroscopy and by transmission electron microscopy. IAD grown stoichiometric GaN consists of random-stacked quasicrystals of some 3 nm diameter. Amorphous material is formed only by incorporation of 15% or more oxygen, which we attribute to the presence of non-tetrahedral bonds centered on oxygen. The ionic favourability of heteropolar bonds and its strikingly simple constraint to even-membered rings is the likely cause of the instability of stoichiometric a-GaN. △ Less

Submitted 26 July, 2004; originally announced July 2004.

Comments: 4 pages, 3 figures

Uranium Do** and Thermal Neutron Irradiation Flux Pinning Effects in MgB2

Authors: T. Silver, J. Horvat, M. Reinhard, Y. Pei, S. Keshavarzi, P. Munroe, S. X. Dou

Abstract: The U/n method is a well-established means of improving flux pinning and critical current performance in cuprate superconductors. The method involves the do** of the superconductor with 235U followed by irradiation with thermal neutrons to promote fission. The resultant columnar damage tracks produced by the energetic fission products pin flux vortices and improve critical current performance… ▽ More The U/n method is a well-established means of improving flux pinning and critical current performance in cuprate superconductors. The method involves the do** of the superconductor with 235U followed by irradiation with thermal neutrons to promote fission. The resultant columnar damage tracks produced by the energetic fission products pin flux vortices and improve critical current performance in magnetic fields. No such improvement could be observed when the U/n method was applied to MgB2 superconductor. No fission tracks could be observed in TEM, even for samples that were irradiated at the highest fluence. Gamma-ray spectroscopy indicated that fission had occurred in the expected way. △ Less

Submitted 2 April, 2003; originally announced April 2003.

Effect of nano-carbon particle do** on the flux pinning properties of MgB2 superconductor

Authors: S. Soltanian, J. Horvat, X. L. Wang, P. Munroe, S. X. Dou

Abstract: Polycrystalline MgB2-xCx samples with x=0.05, 0.1, 0.2, 0.3, 0.4 nano-particle carbon powder were prepared using an in-situ reaction method under well controlled conditions to limit the extent of C substitution. The phases, lattice parameters, microstructures, superconductivity and flux pinning were characterized by XRD, TEM, and magnetic measurements. It was found that both the a-axis lattice p… ▽ More Polycrystalline MgB2-xCx samples with x=0.05, 0.1, 0.2, 0.3, 0.4 nano-particle carbon powder were prepared using an in-situ reaction method under well controlled conditions to limit the extent of C substitution. The phases, lattice parameters, microstructures, superconductivity and flux pinning were characterized by XRD, TEM, and magnetic measurements. It was found that both the a-axis lattice parameter and the Tc decreased monotonically with increasing do** level. For the sample doped with the highest nominal composition of x=0.4 the Tc dropped only 2.7K. The nano-C-doped samples showed an improved field dependence of the Jc compared with the undoped sample over a wide temperature range. The enhancement by C-do** is similar to that of Si-do** but not as strong as for nano-SiC doped MgB2. X-ray diffraction results indicate that C reacted with Mg to form nano-size Mg2C3 and MgB2C2 particles. Nano-particle inclusions and substitution, both observed by transmission electron microscopy, are proposed to be responsible for the enhancement of flux pinning in high fields. △ Less

Submitted 25 February, 2003; originally announced February 2003.

Comments: 9 pages, 12 figures

Improved Irreversibility Behaviour and Critical Current Density in MgB2-Diamond Nanocomposites

Authors: Y. Zhao, X. F. Rui, C. H. Cheng, H. Zhang, P. Munroe, H. M. Zeng, N. Koshizuka, M. Murakami

Abstract: MgB2-diamond nanocomposite superconductors have been synthesized by addition of nano-diamond powder. Microstructural analysis shows that the nanocomposite superconductor consists of tightly-packed MgB2 nano-grains (~50-100 nm) with highly-dispersed and uniformly-distributed diamond nanoparticles (~10-20 nm) inside the grains. The Jc-H and Hiir-T characteristics have been significantly improved i… ▽ More MgB2-diamond nanocomposite superconductors have been synthesized by addition of nano-diamond powder. Microstructural analysis shows that the nanocomposite superconductor consists of tightly-packed MgB2 nano-grains (~50-100 nm) with highly-dispersed and uniformly-distributed diamond nanoparticles (~10-20 nm) inside the grains. The Jc-H and Hiir-T characteristics have been significantly improved in this MgB2-diamond nanocomposite, compared to MgB2 bulk materials prepared by other techniques. Also, the Jc value of 1x104 A/cm2 at 20 K and 4 T and the Hirr value of 6.4 T at 20 K have been achieved △ Less

Submitted 18 February, 2003; originally announced February 2003.

Comments: 9 pages, 5 figures

Do** Effect of Nano-Diamond on Superconductivity and Flux Pinning in MgB2

Authors: C. H. Cheng, H. Zhang, Y. Zhao, Y. Feng, X. F. Rui, P. Munroe, H. M. Zeng, N. Koshizuka, M. Murakami

Abstract: Do** effect of diamond nanoparticles on the superconducting properties of MgB2 bulk material has been studied. It is found that the superconducting transition temperature Tc of MgB2 is suppressed by the diamond-do**, however, the irreversibility field Hirr and the critical current density Jc are systematically enhanced. Microstructural analysis shows that the diamond-doped MgB2 superconducto… ▽ More Do** effect of diamond nanoparticles on the superconducting properties of MgB2 bulk material has been studied. It is found that the superconducting transition temperature Tc of MgB2 is suppressed by the diamond-do**, however, the irreversibility field Hirr and the critical current density Jc are systematically enhanced. Microstructural analysis shows that the diamond-doped MgB2 superconductor consists of tightly-packed MgB2 nano-grains (~50-100 nm) with highly-dispersed and uniformly-distributed diamond nanoparticles (~10-20 nm) inside the grains. High density of dislocations and diamond nanoparticles may take the responsibility for the enhanced flux pinning in the diamond-doped MgB2. △ Less

Submitted 11 February, 2003; originally announced February 2003.

Comments: 16 pages, 6 figures

Significant enhancement of flux pinning in MgB2 superconductor through nano-Si addition

Authors: X. L. Wang, S. H. Zhou, M. J. Qin, P. R. Munroe, S. Soltanian, H. K. Liu, S. X. Dou

Abstract: Polycrystalline MgB2 samples with 10 wt % silicon powder addition were prepared by an in-situ reaction process. Two different Si powders, one with coarse (44 mm) and the other with nano-size (<100 nm) particles were used for making samples. The phases, microstructures, and flux pinning were characterized by XRD, TEM, and magnetic measurements. It was observed that the samples doped with nano-siz… ▽ More Polycrystalline MgB2 samples with 10 wt % silicon powder addition were prepared by an in-situ reaction process. Two different Si powders, one with coarse (44 mm) and the other with nano-size (<100 nm) particles were used for making samples. The phases, microstructures, and flux pinning were characterized by XRD, TEM, and magnetic measurements. It was observed that the samples doped with nano-sized Si powder showed a significantly improved field dependence of the critical current over a wide temperature range compared with both undoped samples and samples with coarse Si added. Jc is as high as 3000 A/cm2 in 8 T at 5 K, one order of magnitude higher than for the undoped MgB2. X-ray diffraction results indicated that Si had reacted with Mg to form Mg2Si. Nano-particle inclusions and substitution, both observed by transmission electron microscopy, are proposed to be responsible for the enhancement of flux pinning in high fields. However, the samples made with the coarse Si powders had a poorer pinning than the undoped MgB2. △ Less

Submitted 19 August, 2002; originally announced August 2002.

Comments: 3 pages, 6 figures

Journal ref: Physica C 385 (2003) 461-465

Transport critical current density in Fe-sheathed nano-SiC doped MgB2 wires

Authors: Shi X. Dou, Joseph Horvat, Saeid Soltanian, Xiao L. Wang, Meng J. Qin, Shi H. Zhou, Hua K. Liu, Paul G Munroe

Abstract: The nano-SiC doped MgB2/Fe wires were fabricated using a powder-in-tube method and an in-situ reaction process. The depression of Tc with increasing SiC do** level remained rather small due to the counterbalanced effect of Si and C co-do**. The high level SiC co-do** allowed creation of the intra-grain defects and nano-inclusions, which act as effective pinning centers, resulting in a subs… ▽ More The nano-SiC doped MgB2/Fe wires were fabricated using a powder-in-tube method and an in-situ reaction process. The depression of Tc with increasing SiC do** level remained rather small due to the counterbalanced effect of Si and C co-do**. The high level SiC co-do** allowed creation of the intra-grain defects and nano-inclusions, which act as effective pinning centers, resulting in a substantial enhancement in the Jc(H) performance. The transport Jc for all the wires is comparable to the magnetic Jc at higher fields despite the low density of the samples and percolative nature of current. The transport Ic for the 10wt% SiC doped MgB2/Fe reached 660A at 5K and 4.5T (Jc = 133,000A/cm2) and 540A at 20K and 2T (Jc = 108,000A/cm2). The transport Jc for the 10wt% SiC doped MgB2 wire is more than an order of magnitude higher than for the state-the-art Fe-sheathed MgB2 wire reported to date at 5K and 10T and 20K and 5T respectively. There is a plenty of room for further improvement in Jc as the density of the current samples is only 50%. △ Less

Submitted 12 August, 2002; originally announced August 2002.

Comments: 4 pages, 7 figures, presented at ASC 2002, Houston

Enhancement of the critical current density and flux pinning of MgB2 superconductor by nanoparticle SiC do**

Authors: S. X. Dou, S. Soltanian, J. Horvat, X. L. Wang, P. Munroe, S. H. Zhou, M. Ionescu, H. K. Liu, M. Tomsic

Abstract: Do** of MgB2 by nano-SiC and its potential for improvement of flux pinning was studied for MgB2-x(SiC)x/2 with x = 0, 0.2 and 0.3 and a 10wt% nano-SiC doped MgB2 samples. Co-substitution of B by Si and C counterbalanced the effects of single-element do**, decreasing Tc by only 1.5K, introducing pinning centres effective at high fields and temperatures and enhancing Jc and Hirr significantly.… ▽ More Do** of MgB2 by nano-SiC and its potential for improvement of flux pinning was studied for MgB2-x(SiC)x/2 with x = 0, 0.2 and 0.3 and a 10wt% nano-SiC doped MgB2 samples. Co-substitution of B by Si and C counterbalanced the effects of single-element do**, decreasing Tc by only 1.5K, introducing pinning centres effective at high fields and temperatures and enhancing Jc and Hirr significantly. Compared to the non-doped sample, Jc for the 10wt% doped sample increased by a factor of 32 at 5K and 8T, 42 at 20K and 5T, and 14 at 30K and 2T. At 20K, which is considered to be a benchmark operating temperature for MgB2, the best Jc for the doped sample was 2.4x10^5A/cm2 at 2T, which is comparable to Jc of the best Ag/Bi-2223 tapes. At 20K and 4T, Jc was 36,000A/cm2, which was twice as high as for the best MgB2 thin films and an order of magnitude higher than for the best Fe/MgB2 tapes. Because of such high performance, it is anticipated that the future MgB2 conductors will be made using the formula of MgBxSiyCz instead of the pure MgB2. △ Less

Submitted 8 July, 2002; originally announced July 2002.

Journal ref: Appl. Phys. Lett. 81, 3419 (2002)

Superconductivity, critical current density, and flux pinning in MgB_{2-x}(SiC)_{x/2} superconductor after SiC nanoparticle do**

Authors: S. X. Dou, A. V. Pan, S. Zhou, M. Ionescu, X. L. Wang, J. Horvat, H. K. Liu, P. R. Munroe

Abstract: We investigated the effect of SiC nano-particle do** on the crystal lattice structure, critical temperature T_c, critical current density J_c, and flux pinning in MgB_2 superconductor. A series of MgB_{2-x}(SiC)_{x/2} samples with x = 0 to 1.0 were fabricated using in-situ reaction process. The contraction of the lattice and depression of T_c with increasing SiC do** level remained rather sm… ▽ More We investigated the effect of SiC nano-particle do** on the crystal lattice structure, critical temperature T_c, critical current density J_c, and flux pinning in MgB_2 superconductor. A series of MgB_{2-x}(SiC)_{x/2} samples with x = 0 to 1.0 were fabricated using in-situ reaction process. The contraction of the lattice and depression of T_c with increasing SiC do** level remained rather small due to the counter-balanced effect of Si and C co-do**. The high level Si and C co-do** allowed the creation of intra-grain defects and highly dispersed nano-inclusions within the grains which can act as effective pinning centers for vortices, improving J_c behavior as a function of the applied magnetic field. The enhanced pinning is mainly attributable to the substitution-induced defects and a local structure fluctuations within grains. A pinning mechanism is proposed to account for different contributions of different defects in MgB_{2-x}(SiC)_{x/2} superconductors. △ Less

Submitted 3 July, 2002; v1 submitted 3 July, 2002; originally announced July 2002.

Comments: 7 pages, 8 figures

Journal ref: J. Appl. Phys. 94, 1850-1856 (2003)

Substitution induced pinning in MgB_2 superconductor doped with SiC nano-particles

Authors: S. X. Dou, A. V. Pan, S. Zhou, M. Ionescu, H. K. Liu, P. R. Munroe

Abstract: By do** MgB_2 superconductor with SiC nano-particles, we have successfully introduced pinning sites directly into the crystal lattice of MgB_2 grains (intra-grain pinning). It became possible due to the combination of counter-balanced Si and C co-substitution for B, leading to a large number of intra-granular dislocations and the dispersed nano-size impurities induced by the substitution. The… ▽ More By do** MgB_2 superconductor with SiC nano-particles, we have successfully introduced pinning sites directly into the crystal lattice of MgB_2 grains (intra-grain pinning). It became possible due to the combination of counter-balanced Si and C co-substitution for B, leading to a large number of intra-granular dislocations and the dispersed nano-size impurities induced by the substitution. The magnetic field dependence of the critical current density was significantly improved in a wide temperature range, whereas the transition temperature in the sample MgB_2(SiC)_x having x = 0.34, the highest do** level prepared, dropped only by 2.6 K. △ Less

Submitted 24 June, 2002; originally announced June 2002.

Comments: 4 pages, 6 figures

Journal ref: Supercond. Sci. Technol. 15, pp.1587-1591 (2002)