Showing 1–50 of 114 results for author: Muller, D A

Millimeter-scale freestanding superconducting infinite-layer nickelate membranes

Authors: Yonghun Lee, Xin Wei, Yijun Yu, Lopa Bhatt, Kyuho Lee, Berit H. Goodge, Shannon P. Harvey, Bai Yang Wang, David A. Muller, Lena F. Kourkoutis, Wei-Sheng Lee, Srinivas Raghu, Harold Y. Hwang

Abstract: Progress in the study of infinite-layer nickelates has always been highly linked to materials advances. In particular, the recent development of superconductivity via hole-do** was predicated on the controlled synthesis of Ni in a very high oxidation state, and subsequent topotactic reduction to a very low oxidation state, currently limited to epitaxial thin films. Here we demonstrate a process… ▽ More Progress in the study of infinite-layer nickelates has always been highly linked to materials advances. In particular, the recent development of superconductivity via hole-do** was predicated on the controlled synthesis of Ni in a very high oxidation state, and subsequent topotactic reduction to a very low oxidation state, currently limited to epitaxial thin films. Here we demonstrate a process to combine these steps with a heterostructure which includes an epitaxial soluble buffer layer, enabling the release of freestanding membranes of (Nd,Sr)NiO2 encapsulated in SrTiO3, which serves as a protective layer. The membranes have comparable structural and electronic properties to that of optimized thin films, and range in lateral dimensions from millimeters to ~100 micron fragments, depending on the degree of strain released with respect to the initial substrate. The changes in the superconducting transition temperature associated with membrane release are quite similar to those reported for substrate and pressure variations, suggestive of a common underlying mechanism. These membranes structures should provide a versatile platform for a range of experimental studies and devices free from substrate constraints. △ Less

Submitted 7 February, 2024; originally announced February 2024.

Silicon Implantation and Annealing in $β$-Ga$_2$O$_3$: Role of Ambient, Temperature, and Time

Authors: K. R. Gann, N. Pieczulewski1, C. A. Gorsak, K. Heinselman, T. J. Asel, B. A. Noesges, K. T. Smith, D. M. Dryden, H. G. Xing, H. P. Nair, D. A. Muller, M. O. Thompson

Abstract: Optimizing thermal anneals of Si-implanted $β$-Ga$_2$O$_3$ is critical for low resistance contacts and selective area do**. We report the impact of annealing ambient, temperature, and time on activation of room temperature ion-implanted Si in $β$-Ga$_2$O$_3$ at concentrations from 5x10$^{18}$ to 1x10$^{20}$ cm$^{-3}$, demonstrating full activation (>80% activation, mobilities >70 cm$^{2}$/Vs) wi… ▽ More Optimizing thermal anneals of Si-implanted $β$-Ga$_2$O$_3$ is critical for low resistance contacts and selective area do**. We report the impact of annealing ambient, temperature, and time on activation of room temperature ion-implanted Si in $β$-Ga$_2$O$_3$ at concentrations from 5x10$^{18}$ to 1x10$^{20}$ cm$^{-3}$, demonstrating full activation (>80% activation, mobilities >70 cm$^{2}$/Vs) with contact resistances below 0.29 $Ω$-mm. Homoepitaxial $β$-Ga$_2$O$_3$ films, grown by plasma assisted MBE on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5x10$^{18}$, 5x10$^{19}$, and 1x10$^{20}$ cm$^{-3}$. Anneals were performed in a UHV-compatible quartz furnace at 1 bar with well-controlled gas composition. To maintain $β$-Ga$_2$O$_3$ stability, $p_{O2}$ must be greater than 10$^{-9}$ bar. Anneals up to $p_{O2}$ = 1 bar achieve full activation at 5x10$^{18}$ cm$^{-3}$, while 5x10$^{19}$ cm$^{-3}$ must be annealed with $p_{O2}$ <10$^{-4}$ bar and 1x10$^{20}$ cm$^{-3}$ requires $p_{O2}$ <10$^{-6}$ bar. Water vapor prevents activation and must be maintained below 10$^{-8}$ bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperature up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 minutes with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5x10$^{19}$ cm$^{-3}$ and occurs rapidly at 1x10$^{20}$ cm$^{-3}$. RBS (channeling) suggests damage recovery is seeded from remnant aligned $β$-Ga$_2$O$_3$ that remains after implantation; this conclusion is also supported by STEM showing retention of the $β$-phase with inclusions that resemble the $γ$-phase. △ Less

Submitted 1 November, 2023; originally announced November 2023.

Supercell formation in epitaxial rare-earth ditelluride thin films

Authors: Adrian Llanos, Salva Salmani-Rezaie, **woong Kim, Nicholas Kioussis, David A. Muller, Joseph Falson

Abstract: Square net tellurides host an array of electronic ground states and commonly exhibit charge-density-wave ordering. Here we report the epitaxy of DyTe$_{2-δ}$ on atomically flat MgO (001) using molecular beam epitaxy. The films are single phase and highly oriented as evidenced by transmission electron microscopy and X-ray diffraction measurements. Epitaxial strain is evident in films and is relieve… ▽ More Square net tellurides host an array of electronic ground states and commonly exhibit charge-density-wave ordering. Here we report the epitaxy of DyTe$_{2-δ}$ on atomically flat MgO (001) using molecular beam epitaxy. The films are single phase and highly oriented as evidenced by transmission electron microscopy and X-ray diffraction measurements. Epitaxial strain is evident in films and is relieved as the thickness increases up to a value of approximately 20 unit cells. Diffraction features associated with a supercell in the films are resolved which is coupled with Te-deficiency. First principles calculations attribute the formation of this defect lattice to nesting conditions in the Fermi surface, which produce a periodic occupancy of the conducting Te square-net, and opens a band gap at the chemical potential. This work establishes the groundwork for exploring the role of strain in tuning electronic and structural phases of epitaxial square-net tellurides and related compounds. △ Less

Submitted 27 August, 2023; originally announced August 2023.

Tuning the Curie temperature of a 2D magnet/topological insulator heterostructure to above room temperature by epitaxial growth

Authors: Wenyi Zhou, Alexander J. Bishop, Xiyue S. Zhang, Katherine Robinson, Igor Lyalin, Ziling Li, Ryan Bailey-Crandell, Thow Min Jerald Cham, Shuyu Cheng, Yunqiu Kelly Luo, Daniel C. Ralph, David A. Muller, Roland K. Kawakami

Abstract: Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize th… ▽ More Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize their magnetic ordering to higher temperatures. In this work, we utilize molecular beam epitaxy to systematically tune the Curie temperature ($T_C$) in thin film Fe$_3$GeTe$_2$/Bi$_2$Te$_3$ from bulk-like values ($\sim$220 K) to above room temperature by increasing the growth temperature from 300 $^\circ$C to 375 $^\circ$C. For samples grown at 375 $^\circ$C, cross-sectional scanning transmission electron microscopy (STEM) reveals the spontaneous formation of different Fe$_m$Ge$_n$Te$_2$ compositions (e.g. Fe$_5$Ge$_2$Te$_2$ and Fe$_7$Ge$_6$Te$_2$) as well as intercalation in the vdW gaps, which are possible origins of the enhanced Curie temperature. This observation paves the way for develo** various Fe$_m$Ge$_n$Te$_2$/TI heterostructures with novel properties. △ Less

Submitted 25 August, 2023; originally announced August 2023.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. Materials 7, 104004 (2023)

3D oxygen vacancy order and defect-property relations in multiferroic (LuFeO$_3$)$_9$/(LuFe$_2$O$_4$)$_1$ superlattices

Authors: K. A. Hunnestad, H. Das, C. Hatzoglou, M. Holtz, C. M. Brooks, A. T. J. van Helvoort, D. A. Muller, D. G. Schlom, J. A. Mundy, D. Meier

Abstract: Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Her… ▽ More Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Here, we measure the chemical composition in multiferroic (LuFeO$_3$)$_9$/(LuFe$_2$O$_4$)$_1$ superlattices, revealing a one-to-one correlation between the distribution of oxygen vacancies and the electric and magnetic properties. Using atom probe tomography, we observe oxygen vacancies arranging in a layered three-dimensional structure with a local density on the order of 10$^{14}$ cm$^{-2}$, congruent with the formula-unit-thick ferrimagnetic LuFe$_2$O$_4$ layers. The vacancy order is promoted by the locally reduced formation energy and plays a key role in stabilizing the ferroelectric domains and ferrimagnetism in the LuFeO$_3$ and LuFe$_2$O$_4$ layers, respectively. The results demonstrate the importance of oxygen vacancies for the room-temperature multiferroicity in this system and establish an approach for quantifying the oxygen defects with atomic-scale precision in 3D, giving new opportunities for deterministic defect-enabled property control in oxide heterostructures. △ Less

Submitted 30 June, 2023; originally announced July 2023.

Exchange bias between van der Waals materials: tilted magnetic states and field-free spin-orbit-torque switching

Authors: Thow Min Jerald Cham, Reiley J. Dorrian, Xiyue S. Zhang, Avalon H. Dismukes, Daniel G. Chica, Andrew F. May, Xavier Roy, David A. Muller, Daniel C. Ralph, Yunqiu Kelly Luo

Abstract: Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the two-dimensional limit. Here, we report studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe3GeTe2 (FGT). The orientation of the exchange bias is along the in-plane easy axis of CrSBr, perpendicular to the out-of-plan… ▽ More Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the two-dimensional limit. Here, we report studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe3GeTe2 (FGT). The orientation of the exchange bias is along the in-plane easy axis of CrSBr, perpendicular to the out-of-plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in-plane exchange bias provides sufficient symmetry breaking to allow deterministic spin-orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr greater than 10 nm is needed to provide a non-zero exchange bias at 30 K. △ Less

Submitted 3 June, 2023; originally announced June 2023.

Strain Relaxation in Core-Shell Pt-Co Catalyst Nanoparticles

Authors: Elliot Padgett, Megan E. Holtz, Anusorn Kongkanand, David A. Muller

Abstract: Surface strain plays a key role in enhancing the activity of Pt-alloy nanoparticle oxygen reduction catalysts. However, the details of strain effects in real fuel cell catalysts are not well-understood, in part due to a lack of strain characterization techniques that are suitable for complex supported nanoparticle catalysts. This work investigates these effects using strain map** with nanobeam e… ▽ More Surface strain plays a key role in enhancing the activity of Pt-alloy nanoparticle oxygen reduction catalysts. However, the details of strain effects in real fuel cell catalysts are not well-understood, in part due to a lack of strain characterization techniques that are suitable for complex supported nanoparticle catalysts. This work investigates these effects using strain map** with nanobeam electron diffraction and a continuum elastic model of strain in simple core-shell particles. We find that surface strain is relaxed both by lattice defects at the core-shell interface and by relaxation across particle shells caused by Poisson expansion in the spherical geometry. The continuum elastic model finds that in the absence of lattice dislocations, geometric relaxation results in a surface strain that scales with the average composition of the particle, regardless of the shell thickness. We investigate the impact of these strain effects on catalytic activity for a series of Pt-Co catalysts treated to vary their shell thickness and core-shell lattice mismatch. For catalysts with the thinnest shells, the activity is consistent with an Arrhenius dependence on the surface strain expected for coherent strain in dislocation-free particles, while catalysts with thicker shells showed greater activity losses indicating strain relaxation caused by dislocations as well. △ Less

Submitted 29 May, 2023; originally announced May 2023.

Comments: 23 pages,7 figures, includes appendix

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

Authors: Len van Deurzen, Jashan Singhal, Jimy Encomendero, Naomi Pieczulewski, Celesta Chang, Yong** Cho, David Anthony Muller, Huili Grace Xing, Debdeep Jena, Oliver Brandt, Jonas Lähnemann

Abstract: Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission… ▽ More Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission from free excitons. The dominant donor in these layers is characterized by an associated exciton binding energy of 13 meV. The observation of excited exciton states up to the exciton continuum allows us to directly extract the $Γ_{5}$ free exciton binding energy of 57 meV. △ Less

Submitted 23 July, 2023; v1 submitted 17 May, 2023; originally announced May 2023.

Journal ref: APL Materials 11, 081109 (2023)

Thermodynamic route of Nb3Sn nucleation: Role of oxygen

Authors: Zeming Sun, Darrah K. Dare, Zhaslan Baraissov, David A. Muller, Michael O. Thompson, Matthias U. Liepe

Abstract: Intermetallic Nb3Sn alloys have long been believed to form through Sn diffusion into Nb. However, our observations of significant oxygen content in Nb3Sn prompted an investigation of alternative formation mechanisms. Through experiments involving different oxide interfaces (clean HF-treated, native oxidized, and anodized), we demonstrate a thermodynamic route that fundamentally challenges the conv… ▽ More Intermetallic Nb3Sn alloys have long been believed to form through Sn diffusion into Nb. However, our observations of significant oxygen content in Nb3Sn prompted an investigation of alternative formation mechanisms. Through experiments involving different oxide interfaces (clean HF-treated, native oxidized, and anodized), we demonstrate a thermodynamic route that fundamentally challenges the conventional Sn diffusion mechanism for Nb3Sn nucleation. Our results highlight the critical involvement of a SnOx intermediate phase. This new nucleation mechanism identifies the principles for growth optimization and new synthesis of high-quality Nb3Sn superconductors. △ Less

Submitted 7 July, 2023; v1 submitted 8 May, 2023; originally announced May 2023.

Surface oxides, carbides, and impurities on RF superconducting Nb and Nb3Sn: A comprehensive analysis

Authors: Zeming Sun, Zhaslan Baraissov, Catherine A. Dukes, Darrah K. Dare, Thomas Oseroff, Michael O. Thompson, David A. Muller, Matthias U. Liepe

Abstract: Surface structures on radio-frequency (RF) superconductors are crucially important in determining their interaction with the RF field. Here we investigate the surface compositions, structural profiles, and valence distributions of oxides, carbides, and impurities on niobium (Nb) and niobium-tin (Nb3Sn) in situ under different processing conditions. We establish the underlying mechanisms of vacuum… ▽ More Surface structures on radio-frequency (RF) superconductors are crucially important in determining their interaction with the RF field. Here we investigate the surface compositions, structural profiles, and valence distributions of oxides, carbides, and impurities on niobium (Nb) and niobium-tin (Nb3Sn) in situ under different processing conditions. We establish the underlying mechanisms of vacuum baking and nitrogen processing in Nb and demonstrate that carbide formation induced during high-temperature baking, regardless of gas environment, determines subsequent oxide formation upon air exposure or low-temperature baking, leading to modifications of the electron population profile. Our findings support the combined contribution of surface oxides and second-phase formation to the outcome of ultra-high vacuum baking (oxygen processing) and nitrogen processing. Also, we observe that vapor-diffused Nb3Sn contains thick metastable oxides, while electrochemically synthesized Nb3Sn only has a thin oxide layer. Our findings reveal fundamental mechanisms of baking and processing Nb and Nb3Sn surface structures for high-performance superconducting RF and quantum applications △ Less

Submitted 16 October, 2023; v1 submitted 3 May, 2023; originally announced May 2023.

Journal ref: Supercond. Sci. Technol. 36 (2023) 115030

Enhanced Critical Field of Superconductivity at an Oxide Interface

Authors: Athby H. Al-Tawhid, Samuel J. Poage, Salva Salmani-Rezaie, Shalinee Chikara, David A. Muller, Divine P. Kumah, Maria N. Gastiasoro, Jose Lorenzana, Kaveh Ahadi

Abstract: The nature of superconductivity and its interplay with strong spin-orbit coupling at the KTaO3(111) interfaces remains a subject of debate. To address this problem, we grew epitaxial LaMnO3/KTaO3(111) heterostructures. We show that superconductivity is robust against the in-plane magnetic field, with the critical field of superconductivity reaching 25 T in optimally doped heterostructures. The sup… ▽ More The nature of superconductivity and its interplay with strong spin-orbit coupling at the KTaO3(111) interfaces remains a subject of debate. To address this problem, we grew epitaxial LaMnO3/KTaO3(111) heterostructures. We show that superconductivity is robust against the in-plane magnetic field, with the critical field of superconductivity reaching 25 T in optimally doped heterostructures. The superconducting order parameter is highly sensitive to carrier density. We argue that spin-orbit coupling drives the formation of anomalous quasiparticles with vanishing magnetic moment, providing the condensate significant immunity against magnetic fields beyond the Pauli paramagnetic limit. These results offer design opportunities for superconductors with extreme resilience against magnetic field. △ Less

Submitted 27 April, 2023; originally announced April 2023.

ZrNb(CO) RF superconducting thin film with high critical temperature in the theoretical limit

Authors: Zeming Sun, Thomas Oseroff, Zhaslan Baraissov, Darrah K. Dare, Katrina Howard, Benjamin Francis, A**kya C. Hire, Nathan Sitaraman, Tomas A. Arias, Mark K. Transtrum, Richard Hennig, Michael O. Thompson, David A. Muller, Matthias U. Liepe

Abstract: Superconducting radio-frequency (SRF) resonators are critical components for particle accelerator applications, such as free-electron lasers, and for emerging technologies in quantum computing. Develo** advanced materials and their deposition processes to produce RF superconductors that yield nanoohms surface resistances is a key metric for the wider adoption of SRF technology. Here we report Zr… ▽ More Superconducting radio-frequency (SRF) resonators are critical components for particle accelerator applications, such as free-electron lasers, and for emerging technologies in quantum computing. Develo** advanced materials and their deposition processes to produce RF superconductors that yield nanoohms surface resistances is a key metric for the wider adoption of SRF technology. Here we report ZrNb(CO) RF superconducting films with high critical temperatures (Tc) achieved for the first time under ambient pressure. The attainment of a Tc near the theoretical limit for this material without applied pressure is promising for its use in practical applications. A range of Tc, likely arising from Zr do** variation, may allow a tunable superconducting coherence length that lowers the sensitivity to material defects when an ultra-low surface resistance is required. Our ZrNb(CO) films are synthesized using a low-temperature (100 - 200 C) electrochemical recipe combined with thermal annealing. The phase transformation as a function of annealing temperature and time is optimized by the evaporated Zr-Nb diffusion couples. Through phase control, we avoid hexagonal Zr phases that are equilibrium-stable but degrade Tc. X-ray and electron diffraction combined with photoelectron spectroscopy reveal a system containing cubic ZrNb mixed with rocksalt NbC and low-dielectric-loss ZrO2. We demonstrate proof-of-concept RF performance of ZrNb(CO) on an SRF sample test system. BCS resistance trends lower than reference Nb, while quench fields occur at approximately 35 mT. Our results demonstrate the potential of ZrNb(CO) thin films for particle accelerator and other SRF applications. △ Less

Submitted 12 June, 2023; v1 submitted 28 February, 2023; originally announced February 2023.

Smooth, homogeneous, high-purity Nb3Sn superconducting RF resonant cavity by seed-free electrochemical synthesis

Authors: Zeming Sun, Zhaslan Baraissov, Ryan D. Porter, Liana Shpani, Yu-Tsun Shao, Thomas Oseroff, Michael O. Thompson, David A. Muller, Matthias U. Liepe

Abstract: Workbench-size particle accelerators, enabled by Nb3Sn-based superconducting radio-frequency (SRF) cavities, hold the potential of driving scientific discovery by offering a widely accessible and affordable source of high-energy electrons and X-rays. Thin-film Nb3Sn RF superconductors with high quality factors, high operation temperatures, and high-field potentials are critical for these devices.… ▽ More Workbench-size particle accelerators, enabled by Nb3Sn-based superconducting radio-frequency (SRF) cavities, hold the potential of driving scientific discovery by offering a widely accessible and affordable source of high-energy electrons and X-rays. Thin-film Nb3Sn RF superconductors with high quality factors, high operation temperatures, and high-field potentials are critical for these devices. However, surface roughness, non-stoichiometry, and impurities in Nb3Sn deposited by conventional Sn-vapor diffusion prevent them from reaching their theoretical capabilities. Here we demonstrate a seed-free electrochemical synthesis that pushes the limit of chemical and physical properties in Nb3Sn. Utilization of electrochemical Sn pre-deposits reduces the roughness of converted Nb3Sn by five times compared to typical vapor-diffused Nb3Sn. Quantitative map**s using chemical and atomic probes confirm improved stoichiometry and minimized impurity concentrations in electrochemically synthesized Nb3Sn. We have successfully applied this Nb3Sn to the large-scale 1.3 GHz SRF cavity and demonstrated ultra-low BCS surface resistances at multiple operation temperatures, notably lower than vapor-diffused cavities. Our smooth, homogeneous, high-purity Nb3Sn provides the route toward high efficiency and high fields for SRF applications under helium-free cryogenic operations. △ Less

Submitted 5 September, 2023; v1 submitted 3 February, 2023; originally announced February 2023.

Journal ref: Superconductor Science and Technology, 2023

Growth of $α-Ga_2O_3$ on $Al_2O_3$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

Authors: J. P. McCandless, D. Rowe, N. Pieczulewski, V. Protasenko, M. Alonso-Orts, M. S. Williams, M. Eickhoff, H. G. Xing, D. A. Muller, D. Jena, P. Vogt

Abstract: We report the growth of $α-Ga_2O_3$ on $m$-plane $Al_2O_3$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for $α-Ga_2O_3$ (10-10), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of… ▽ More We report the growth of $α-Ga_2O_3$ on $m$-plane $Al_2O_3$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for $α-Ga_2O_3$ (10-10), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of $α-Ga_2O_3$. Through the use of In-mediated catalysis, growth rates over $0.2\,μ\text{m}\,\text{hr}^{-1}$ and rocking curves with full width at half maxima of $Δω\approx 0.45^{\circ}$ are achieved. Faceting is observed along the $α-Ga_2O_3$ film surface and is explored through scanning transmission electron microscopy. △ Less

Submitted 30 January, 2023; originally announced January 2023.

Molecular Beam Epitaxy of KTaO$_3$

Authors: Tobias Schwaigert, Salva Salmani-Razaie, Matthew R. Barone, Hanjong Paik, Ethan Ray, Michael D. Williams, David A. Muller, Darrell G. Schlom, Kaveh Ahadi

Abstract: Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high quality KTaO3 thin films by molecular-beam epitaxy. Tantalum was provided by both a suboxide source emanating a TaO2 flux from Ta2O5 co… ▽ More Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high quality KTaO3 thin films by molecular-beam epitaxy. Tantalum was provided by both a suboxide source emanating a TaO2 flux from Ta2O5 contained in a conventional effusion cell as well as an electron-beam-heated tantalum source. Excess potassium and a combination of ozone and oxygen (10 \% O3 + 90 \% O2) were simultaneously supplied with the TaO$_2$ (or tantalum) molecular beams to grow the KTaO$_3$ films. Laue fringes suggest that the films are smooth with an abrupt film/substrate interface. Cross-sectional scanning transmission electron microscopy does not show any extended defects and confirms that the films have an atomically abrupt interface with the substrate. Atomic force microscopy reveals atomic steps at the surface of the grown films. Reciprocal space map** demonstrates that the films, when sufficiently thin, are coherently strained to the SrTiO$_3$ (001) and GdScO$_3$ (110) substrates. △ Less

Submitted 29 December, 2022; originally announced December 2022.

Thermally-generated spin current in the topological insulator Bi$_2$Se$_3$

Authors: Rakshit Jain, Max Stanley, Arnab Bose, Anthony R. Richardella, Xiyue S. Zhang, Timothy Pillsbury, David A. Muller, Nitin Samarth, Daniel C. Ralph

Abstract: We complete measurements of interconversions among the full triad of thermal gradients, charge currents, and spin currents in the topological insulator Bi$_2$Se$_3$ by quantifying the efficiency with which thermal gradients can generate transverse spin currents. We accomplish this by comparing the spin Nernst magneto-thermopower to the spin Hall magnesistance for bilayers of Bi$_2$Se$_3$/CoFeB. We… ▽ More We complete measurements of interconversions among the full triad of thermal gradients, charge currents, and spin currents in the topological insulator Bi$_2$Se$_3$ by quantifying the efficiency with which thermal gradients can generate transverse spin currents. We accomplish this by comparing the spin Nernst magneto-thermopower to the spin Hall magnesistance for bilayers of Bi$_2$Se$_3$/CoFeB. We find that Bi$_2$Se$_3$ does generate substantial thermally-driven spin currents. A lower bound for the ratio of spin current to thermal gradient is $J_s/\nabla_x T$ = (4.9 $\pm$ 0.9) $\times$ 10$^{6}$ ($\hbar/2e$) A m$^{-2}$ / K $μ$m$^{-1}$, and a lower bound for the magnitude of the spin Nernst ratio is $-$0.61 $\pm$ 0.11. The spin Nernst ratio for Bi$_2$Se$_3$ is the largest among all materials measured to date, 2-3 times larger compared to previous measurements for the heavy metals Pt and W. △ Less

Submitted 11 October, 2022; originally announced October 2022.

Theory of Nb-Zr Alloy Superconductivity and First Experimental Demonstration for Superconducting Radio-Frequency Cavity Applications

Authors: Nathan S. Sitaraman, Zeming Sun, Ben Francis, A**kya C. Hire, Thomas Oseroff, Zhaslan Baraissov, Tomás A. Arias, Richard Hennig, Matthias U. Liepe, David A. Muller, Mark K. Transtrum

Abstract: Niobium-zirconium (Nb-Zr) alloy is an old superconductor that is a promising new candidate for superconducting radio-frequency (SRF) cavity applications. Using density-functional and Eliashberg theories, we show that addition of Zr to a Nb surface in small concentrations increases the critical temperature $T_c$ and improves other superconducting properties. Furthermore, we calculate $T_c$ for Nb-Z… ▽ More Niobium-zirconium (Nb-Zr) alloy is an old superconductor that is a promising new candidate for superconducting radio-frequency (SRF) cavity applications. Using density-functional and Eliashberg theories, we show that addition of Zr to a Nb surface in small concentrations increases the critical temperature $T_c$ and improves other superconducting properties. Furthermore, we calculate $T_c$ for Nb-Zr alloys across a broad range of Zr concentrations, showing good agreement with the literature for disordered alloys as well as the potential for significantly higher $T_c$ in ordered alloys near 75%Nb/25%Zr composition. We provide experimental verification on Nb-Zr alloy samples and SRF sample test cavities prepared with either physical vapor or our novel electrochemical deposition recipes. These samples have the highest measured $T_c$ of any Nb-Zr superconductor to date and indicate a reduction in BCS resistance compared to the conventional Nb reference sample; they represent the first steps along a new pathway to greatly enhanced SRF performance. Finally, we use Ginzburg-Landau theory to show that the addition of Zr to a Nb surface increases the superheating field $B_{sh}$, a key figure of merit for SRF which determines the maximum accelerating gradient at which cavities can operate. △ Less

Submitted 22 August, 2022; originally announced August 2022.

Comments: 7 pages, 5 figures, submitted to Physical Review Letters

Multi-scale time-resolved electron diffraction: A case study in moiré materials

Authors: C. J. R. Duncan, M. Kaemingk, W. H. Li, M. B. Andorf, A. C. Bartnik, A. Galdi, M. Gordon, C. A. Pennington, I. V. Bazarov, H. J. Zeng, F. Liu, D. Luo, A. Sood, A. M. Lindenberg, M. W. Tate, D. A. Muller, J. Thom-Levy, S. M. Gruner, J. M. Maxson

Abstract: Ultrafast-optical-pump -- structural-probe measurements, including ultrafast electron and x-ray scattering, provide direct experimental access to the fundamental timescales of atomic motion, and are thus foundational techniques for studying matter out of equilibrium. High-performance detectors are needed in scattering experiments to obtain maximum scientific value from every probe particle. We dep… ▽ More Ultrafast-optical-pump -- structural-probe measurements, including ultrafast electron and x-ray scattering, provide direct experimental access to the fundamental timescales of atomic motion, and are thus foundational techniques for studying matter out of equilibrium. High-performance detectors are needed in scattering experiments to obtain maximum scientific value from every probe particle. We deploy a hybrid pixel array direct electron detector to perform ultrafast electron diffraction experiments on a WSe$_2$/MoSe$_2$ 2D heterobilayer, resolving the weak features of diffuse scattering and moiré superlattice structure without saturating the zero order peak. Enabled by the detector's high frame rate, we show that a chop** technique provides diffraction difference images with signal-to-noise at the shot noise limit. Finally, we demonstrate that a fast detector frame rate coupled with a high repetition rate probe can provide continuous time resolution from femtoseconds to seconds, enabling us to perform a scanning ultrafast electron diffraction experiment that maps thermal transport in WSe$_2$/MoSe$_2$ and resolves distinct diffusion mechanisms in space and time. △ Less

Submitted 27 July, 2023; v1 submitted 16 June, 2022; originally announced June 2022.

Comments: Submitted manuscript, 22 pages, 5 figures

Gate-tunable anomalous Hall effect in a 3D topological insulator/2D magnet van der Waals heterostructure

Authors: Vishakha Gupta, Rakshit Jain, Yafei Ren, Xiyue S. Zhang, Husain F. Alnaser, Amit Vashist, Vikram V. Deshpande, David A. Muller, Di Xiao, Taylor D. Sparks, Daniel C. Ralph

Abstract: We demonstrate advantages of samples made by mechanical stacking of exfoliated van der Waals materials for controlling the topological surface state of a 3-dimensional topological insulator (TI) via interaction with an adjacent magnet layer. We assemble bilayers with pristine interfaces using exfoliated flakes of the TI BiSbTeSe2 and the magnet Cr2Ge2Te6, thereby avoiding problems caused by interd… ▽ More We demonstrate advantages of samples made by mechanical stacking of exfoliated van der Waals materials for controlling the topological surface state of a 3-dimensional topological insulator (TI) via interaction with an adjacent magnet layer. We assemble bilayers with pristine interfaces using exfoliated flakes of the TI BiSbTeSe2 and the magnet Cr2Ge2Te6, thereby avoiding problems caused by interdiffusion that can affect interfaces made by top-down deposition methods. The samples exhibit an anomalous Hall effect (AHE) with abrupt hysteretic switching. For the first time in samples composed of a TI and a separate ferromagnetic layer, we demonstrate that the amplitude of the AHE can be tuned via gate voltage with a strong peak near the Dirac point. This is the signature expected for the AHE due to Berry curvature associated with an exchange gap induced by interaction between the topological surface state and an out-of-plane-oriented magnet. △ Less

Submitted 6 June, 2022; originally announced June 2022.

Comments: submitted version

Giant bulk spin-orbit torque and efficient electrical switching in single ferrimagnetic FeTb layers with strong perpendicular magnetic anisotropy

Authors: Qianbiao Liu, Lijun Zhu, Xiyue S. Zhang, David A. Muller, Daniel C. Ralph

Abstract: Efficient manipulation of antiferromagnetically coupled materials that are integration-friendly and have strong perpendicular magnetic anisotropy (PMA) is of great interest for low-power, fast, dense magnetic storage and computing. Here, we report a distinct, giant bulk dam**-like spin-orbit torque in strong-PMA ferrimagnetic Fe100-xTbx single layers that are integration-friendly (composition-un… ▽ More Efficient manipulation of antiferromagnetically coupled materials that are integration-friendly and have strong perpendicular magnetic anisotropy (PMA) is of great interest for low-power, fast, dense magnetic storage and computing. Here, we report a distinct, giant bulk dam**-like spin-orbit torque in strong-PMA ferrimagnetic Fe100-xTbx single layers that are integration-friendly (composition-uniform, amorphous, sputter-deposited). For sufficiently-thick layers, this bulk torque is constant in the efficiency per unit layer thickness, ξ_DL^j/t, with a record-high value of 0.036nm-1, and the dam**like torque efficiency ξ_DL^j achieves very large values for thick layers, up to 300% for 90 nm layers. This giant bulk torque by itself switches tens of nm thick Fe100-xTbx layers that have very strong PMA and high coercivity at current densities as low as a few MA/cm2. Surprisingly, for a given layer thickness, ξ_DL^j shows strong composition dependence and becomes negative for composition where the total angular momentum is oriented parallel to the magnetization rather than antiparallel. Our findings of giant bulk spin torque efficiency and intriguing torque-compensation correlation will stimulate study of such unique spin-orbit phenomena in a variety of ferrimagnetic hosts. This work paves a promising avenue for develo** ultralow-power, fast, dense ferrimagnetic storage and computing devices. △ Less

Submitted 26 March, 2022; originally announced March 2022.

Comments: To appear in Applied Physics Reviews

Pervasive beyond room-temperature ferromagnetism in a doped van der Waals magnet: Ni doped Fe$_5$GeTe$_2$ with $T_{\text{C}}$ up to 478 K

Authors: Xiang Chen, Yu-Tsun Shao, Rui Chen, Sandhya Susarla, Tom Hogan, Yu He, Hongrui Zhang, Siqi Wang, Jie Yao, Peter Ercius, David A. Muller, Ramamoorthy Ramesh, Robert J. Birgeneau

Abstract: The existence of long range magnetic order in low dimensional magnetic systems, such as the quasi-two-dimensional (2D) van der Waals (vdW) magnets, has attracted intensive studies of new physical phenomena. The vdW Fe$_N$GeTe$_2$ ($N$ = 3, 4, 5; FGT) family is exceptional owing to its vast tunability of magnetic properties. Particularly, a ferromagnetic ordering temperature ($T_{\text{C}}$) above… ▽ More The existence of long range magnetic order in low dimensional magnetic systems, such as the quasi-two-dimensional (2D) van der Waals (vdW) magnets, has attracted intensive studies of new physical phenomena. The vdW Fe$_N$GeTe$_2$ ($N$ = 3, 4, 5; FGT) family is exceptional owing to its vast tunability of magnetic properties. Particularly, a ferromagnetic ordering temperature ($T_{\text{C}}$) above room temperature at $N$ = 5 (F5GT) is observed. Here, our study shows that, by nickel (Ni) substitution of iron (Fe) in F5GT, a record high $T_{\text{C}}$ = 478(6) K is achieved. Importantly, pervasive, beyond-room-temperature ferromagnetism exists in almost the entire do** range of the phase diagram of Ni-F5GT. We argue that this striking observation in Ni-F5GT can be possibly due to several contributing factors, in which the structural alteration enhanced 3D magnetic couplings might be critical for enhancing the ferromagnetic order. △ Less

Submitted 26 May, 2022; v1 submitted 28 February, 2022; originally announced March 2022.

Comments: Submitted on 06-Dec-2021; Now online

Nonvolatile Electric-Field Control of Inversion Symmetry

Authors: Lucas Caretta, Yu-Tsun Shao, Jia Yu, Antonio B. Mei, Bastien F. Grosso, Cheng Dai, Piush Behera, Daehun Lee, Margaret McCarter, Eric Parsonnet, Harikrishnan K. P., Fei Xue, Ed Barnard, Steffen Ganschow, Archana Raja, Lane W. Martin, Long-Qing Chen, Manfred Fiebig, Keji Lai, Nicola A. Spaldin, David A. Muller, Darrell G. Schlom, Ramamoorthy Ramesh

Abstract: In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when these ground states have different crystal symmetries. A key scientific and technological challenge is to stabilize and control coexistence of symmetry-distinct phases with external stimuli. Using BiFeO3 (BFO) layers con… ▽ More In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when these ground states have different crystal symmetries. A key scientific and technological challenge is to stabilize and control coexistence of symmetry-distinct phases with external stimuli. Using BiFeO3 (BFO) layers confined between layers of the dielectric TbScO3 as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BFO phases with antipolar, insulating and polar, semiconducting behavior, respectively at room temperature. Application of in-plane electric (polar) fields can both remove and introduce centrosymmetry from the system resulting in reversible, nonvolatile interconversion between the two phases. This interconversion between the centrosymmetric insulating and non-centrosymmetric semiconducting phases coincides with simultaneous changes in the non-linear optical response of over three orders of magnitude, a change in resistivity of over five orders of magnitude, and a change in the polar order. Our work establishes a materials platform allowing for novel cross-functional devices which take advantage of changes in optical, electrical, and ferroic responses. △ Less

Submitted 2 January, 2022; originally announced January 2022.

Comments: L Caretta and Y-T Shao contributed equally. 64 pages, 4 figures, 25 supplemental figures, 1 supplemental table

Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide catalyzed epitaxy

Authors: Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Jonathan P. McCandless, Jisung Park, Kursti DeLello, David A. Muller, Huili G. Xing, Debdeep Jena, Darrell G. Schlom

Abstract: We observe a catalytic mechanism during the growth of III-O and IV-O materials by suboxide molecular-beam epitaxy ($S$-MBE). By supplying the molecular catalysts In$_2$O and SnO we increase the growth rates of Ga$_2$O$_3$ and In$_2$O$_3$. This catalytic action is explained by a metastable adlayer $A$, which increases the reaction probability of the reactants Ga$_2$O and In$_2$O with active atomic… ▽ More We observe a catalytic mechanism during the growth of III-O and IV-O materials by suboxide molecular-beam epitaxy ($S$-MBE). By supplying the molecular catalysts In$_2$O and SnO we increase the growth rates of Ga$_2$O$_3$ and In$_2$O$_3$. This catalytic action is explained by a metastable adlayer $A$, which increases the reaction probability of the reactants Ga$_2$O and In$_2$O with active atomic oxygen, leading to an increase of the growth rates of Ga$_2$O$_3$ and In$_2$O$_3$. We derive a model for the growth of binary III-O and IV-O materials by $S$-MBE and apply these findings to a generalized catalytic description for metal-oxide catalyzed epitaxy (MOCATAXY), applicable to elemental and molecular catalysts. We derive a mathematical description of $S$-MBE and MOCATAXY providing a computational framework to set growth parameters in previously inaccessible kinetic and thermodynamic growth regimes when using the aforementioned catalysis. Our results indicate MOCATAXY takes place with a suboxide catalyst rather than with an elemental catalyst. As a result of the growth regimes achieved, we demonstrate a Ga$_2$O$_3$/Al$_2$O$_3$ heterostructure with unrivaled crystalline quality, paving the way to the preparation of oxide device structures with unprecedented perfection. △ Less

Submitted 10 December, 2021; v1 submitted 9 December, 2021; originally announced December 2021.

Uncovering Material Deformations via Machine Learning Combined with Four-Dimensional Scanning Transmission Electron Microscopy

Authors: Chuqiao Shi, Michael C. Cao, Sarah M. Rehn, Sang-Hoon Bae, Jeehwan Kim, Matthew R. Jones, David A. Muller, Yimo Han

Abstract: Understanding lattice deformations is crucial in determining the properties of nanomaterials, which can become more prominent in future applications ranging from energy harvesting to electronic devices. However, it remains challenging to reveal unexpected deformations that crucially affect material properties across a large sample area. Here, we demonstrate a rapid and semi-automated unsupervised… ▽ More Understanding lattice deformations is crucial in determining the properties of nanomaterials, which can become more prominent in future applications ranging from energy harvesting to electronic devices. However, it remains challenging to reveal unexpected deformations that crucially affect material properties across a large sample area. Here, we demonstrate a rapid and semi-automated unsupervised machine learning approach to uncover lattice deformations in materials. Our method utilizes divisive hierarchical clustering to automatically unveil multi-scale deformations in the entire sample flake from the diffraction data using four-dimensional scanning transmission electron microscopy (4D-STEM). Our approach overcomes the current barriers of large 4D data analysis and enables extraction of essential features even without a priori knowledge of the sample. Using this purely data-driven analysis, we have uncovered different types of material deformations, such as strain, lattice distortion, bending contour, etc., which can significantly impact the band structure and subsequent performance of nanomaterials-based devices. We envision that this data-driven procedure will provide insight into the intrinsic structures and accelerate the discovery of novel materials. △ Less

Submitted 11 November, 2021; originally announced November 2021.

Very-High Dynamic Range, 10,000 frames/second Pixel Array Detector for Electron Microscopy

Authors: Hugh T. Philipp, Mark W. Tate, Katherine S. Shanks, Luigi Mele, Maurice Peemen, Pleun Dona, Reinout Hartong, Gerard van Veen, Yu-Tsun Shao, Zhen Chen, Julia Thom-Levy, David A. Muller, Sol M. Gruner

Abstract: Precision and accuracy of quantitative scanning transmission electron microscopy (STEM) methods such as ptychography, and the map** of electric, magnetic and strain fields depend on the dose. Reasonable acquisition time requires high beam current and the ability to quantitatively detect both large and minute changes in signal. A new hybrid pixel array detector (PAD), the second-generation Electr… ▽ More Precision and accuracy of quantitative scanning transmission electron microscopy (STEM) methods such as ptychography, and the map** of electric, magnetic and strain fields depend on the dose. Reasonable acquisition time requires high beam current and the ability to quantitatively detect both large and minute changes in signal. A new hybrid pixel array detector (PAD), the second-generation Electron Microscope Pixel Array Detector (EMPAD-G2), addresses this challenge by advancing the technology of a previous generation PAD, the EMPAD. The EMPAD-G2 images continuously at a frame-rates up to 10 kHz with a dynamic range that spans from low-noise detection of single electrons to electron beam currents exceeding 180 pA per pixel, even at electron energies of 300 keV. The EMPAD-G2 enables rapid collection of high-quality STEM data that simultaneously contain full diffraction information from unsaturated bright field disks to usable Kikuchi bands and higher-order Laue zones. Test results from 80 to 300 keV are presented, as are first experimental results demonstrating ptychographic reconstructions, strain and polarization maps. We introduce a new information metric, the Maximum Usable Imaging Speed (MUIS), to identify when a detector becomes electron-starved, saturated or its pixel count is mismatched with the beam current. △ Less

Submitted 10 November, 2021; originally announced November 2021.

Tilted spin current generated by the collinear antiferromagnet RuO2

Authors: Arnab Bose, Nathaniel J. Schreiber, Rakshit Jain, Ding-Fu Shao, Hari P. Nair, Jiaxin Sun, Xiyue S. Zhang, David A. Muller, Evgeny Y. Tsymbal, Darrell G. Schlom, Daniel C. Ralph

Abstract: We report measurements demonstrating that when the Neel vector of the collinear antiferromagnet RuO2 is appropriately canted relative to the sample plane, the antiferromagnet generates a substantial out of plane dam**-like torque. The measurements are in good accord with predictions that when an electric field, E is applied to the spin split band structure of RuO2 it can cause a strong transvers… ▽ More We report measurements demonstrating that when the Neel vector of the collinear antiferromagnet RuO2 is appropriately canted relative to the sample plane, the antiferromagnet generates a substantial out of plane dam**-like torque. The measurements are in good accord with predictions that when an electric field, E is applied to the spin split band structure of RuO2 it can cause a strong transverse spin current even in the absence of spin-orbit coupling. This produces characteristic changes in all three components of the E induced torque vector as a function of the angle of E relative to the crystal axes, corresponding to a spin current with a well defined tilted spin orientation s approximately (but not exactly) parallel to the Neel vector, flowing perpendicular to both E and S. This angular dependence is the signature of an antiferromagnetic spin Hall effect with symmetries that are distinct from other mechanisms of spin-current generation reported in antiferromagnetic or ferromagnetic materials. △ Less

Submitted 20 August, 2021; originally announced August 2021.

Journal ref: Nature Electronics 5, 267 (2022)

A room temperature polar ferromagnetic metal

Authors: Hongrui Zhang, Yu-Tsun Shao, Rui Chen, Xiang Chen, Sandhya Susarla, Jonathan T. Reichanadter, Lucas Caretta, Xiaoxi Huang, Nicholas S. Settineri, Zhen Chen, **gcheng Zhou, Edith Bourret-Courchesne, Peter Ercius, Jie Yao, Jeffrey B. Neaton, David A. Muller, Robert J. Birgeneau, Ramamoorthy Ramesh

Abstract: The advent of long-range magnetic order in non-centrosymmetric compounds has stimulated interest in the possibility of exotic spin transport phenomena and topologically protected spin textures for applications in next-generation spintronics. This work reports a novel wurtzite-structure polar magnetic metal, identified as AA'-stacked (Fe0.5Co0.5)5-xGeTe2, which exhibits a Neel-type skyrmion lattice… ▽ More The advent of long-range magnetic order in non-centrosymmetric compounds has stimulated interest in the possibility of exotic spin transport phenomena and topologically protected spin textures for applications in next-generation spintronics. This work reports a novel wurtzite-structure polar magnetic metal, identified as AA'-stacked (Fe0.5Co0.5)5-xGeTe2, which exhibits a Neel-type skyrmion lattice as well as a Rashba-Edelstein effect at room temperature. Atomic resolution imaging of the structure reveals a structural transition as a function of Co-substitution, leading to the polar phase at 50% Co. This discovery reveals an unprecedented layered polar magnetic system for investigating intriguing spin topologies and ushers in a promising new framework for spintronics. △ Less

Submitted 1 June, 2021; originally announced June 2021.

Ferroelectricity in Polar ScAlN/GaN Epitaxial Semiconductor Heterostructures

Authors: Joseph Casamento, Ved Gund, Hyunjea Lee, Kazuki Nomoto, Takuya Maeda, Benyamin Davaji, Mohammad Javad Asadi, John Wright, Yu-Tsun Shao, David A. Muller, Amit Lal, Huili, Xing, Debdeep Jena

Abstract: Room temperature ferroelectricity is observed in lattice-matched ~18% ScAlN/GaN heterostructures grown by molecular beam epitaxy on single-crystal GaN substrates. The epitaxial films have smooth surface morphologies and high crystallinity. Pulsed current-voltage measurements confirm stable and repeatable polarization switching in such ferroelectric/semiconductor structures at several measurement c… ▽ More Room temperature ferroelectricity is observed in lattice-matched ~18% ScAlN/GaN heterostructures grown by molecular beam epitaxy on single-crystal GaN substrates. The epitaxial films have smooth surface morphologies and high crystallinity. Pulsed current-voltage measurements confirm stable and repeatable polarization switching in such ferroelectric/semiconductor structures at several measurement conditions, and in multiple samples. The measured coercive field values are Ec~0.7 MV/cm at room temperature, with remnant polarization Pr~10 μC/cm2 for ~100 nm thick ScAlN layers. These values are substantially lower than comparable ScAlN control layers deposited by sputtering. Importantly, the coercive field of MBE ScAlN is smaller than the critical breakdown field of GaN, offering the potential for low voltage ferroelectric switching. The low coercive field ferroelectricity of ScAlN on GaN heralds the possibility of new forms of electronic and photonic devices with epitaxially integrated ferroelectric/semiconductor heterostructures that take advantage of the GaN electronic and photonic semiconductor platform, where the underlying semiconductors themselves exhibit spontaneous and piezoelectric polarization. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Emergence of a noncollinear magnetic state in twisted bilayer CrI3

Authors: Yang Xu, Ariana Ray, Yu-Tsun Shao, Shengwei Jiang, Daniel Weber, Joshua E. Goldberger, Kenji Watanabe, Takashi Taniguchi, David A. Muller, Kin Fai Mak, Jie Shan

Abstract: The emergence of two-dimensional (2D) magnetic crystals and moiré engineering has opened the door for devising new magnetic ground states via competing interactions in moiré superlattices. Although a suite of interesting phenomena, including multi-flavor magnetic states, noncollinear magnetic states, moiré magnon bands and magnon networks, has been predicted, nontrivial magnetic ground states in t… ▽ More The emergence of two-dimensional (2D) magnetic crystals and moiré engineering has opened the door for devising new magnetic ground states via competing interactions in moiré superlattices. Although a suite of interesting phenomena, including multi-flavor magnetic states, noncollinear magnetic states, moiré magnon bands and magnon networks, has been predicted, nontrivial magnetic ground states in twisted bilayer magnetic crystals have yet to be realized. Here, by utilizing the stacking-dependent interlayer exchange interactions in CrI3, we demonstrate in small-twist-angle bilayer CrI3 a noncollinear magnetic ground state. It consists of both antiferromagnetic (AF) and ferromagnetic (FM) domains and is a result of the competing interlayer AF coupling in the monoclinic stacking regions of the moiré superlattice and the energy cost for forming AF-FM domain walls. Above the critical twist angle of ~ 3°, the noncollinear state transitions abruptly to a collinear FM ground state. We further show that the noncollinear magnetic state can be controlled by gating through the do**-dependent interlayer AF interaction. Our results demonstrate the possibility of engineering moiré magnetism in twisted bilayer magnetic crystals, as well as gate-voltage-controllable high-density magnetic memory storage. △ Less

Submitted 17 March, 2021; originally announced March 2021.

Emergent chirality in a polar meron to skyrmion phase transition

Authors: Yu-Tsun Shao, Sujit Das, Zijian Hong, Ruijuan Xu, Swathi Chandrika, Fernando Gómez-Ortiz, Pablo García-Fernández, Long-Qing Chen, Harold Y. Hwang, Javier Junquera, Lane W. Martin, Ramamoorthy Ramesh, David A. Muller

Abstract: Polar skyrmions are predicted to emerge from the interplay of elastic, electrostatic and gradient energies, in contrast to the key role of the anti-symmetric Dzyalozhinskii-Moriya interaction in magnetic skyrmions. With the discovery of topologically-stable polar skyrmions, it is of both fundamental and practical interest to understand the microscopic nature and the possibility of temperature- and… ▽ More Polar skyrmions are predicted to emerge from the interplay of elastic, electrostatic and gradient energies, in contrast to the key role of the anti-symmetric Dzyalozhinskii-Moriya interaction in magnetic skyrmions. With the discovery of topologically-stable polar skyrmions, it is of both fundamental and practical interest to understand the microscopic nature and the possibility of temperature- and strain-driven phase transitions in ensembles of such polar skyrmions. Here, we explore the reversible transition from a skyrmion state (topological charge of -1) to a two-dimensional, tetratic lattice of merons (with topological charge of -1/2) upon varying the temperature and elastic boundary conditions in [(PbTiO3)16/(SrTiO3)16]8 lifted-off membranes. This topological phase transition is accompanied by a change in chirality, from zero-net chirality (in meronic phase) to net-handedness (in skyrmionic phase). To map these changes microscopically required develo** new imaging methods. We show how scanning convergent beam electron diffraction provides a robust measure of the local polarization simultaneously with the strain state at sub-nm resolution, while also directly map** the chirality of each skyrmion. Using this, we demonstrate strain as a crucial order parameter to drive isotropic-to-anisotropic structural transitions of chiral polar skyrmions to non-chiral merons, validated with X-ray reciprocal space map** and theoretical phase-field simulations. These results revealed by our new measurement methods provide the first illustration of systematic control of rich variety of topological dipole textures by altering the mechanical boundary conditions, which may offer a promising way to control their functionalities in ferroelectric nanodevices using the local and spatial distribution of chirality and order. △ Less

Submitted 2 January, 2023; v1 submitted 12 January, 2021; originally announced January 2021.

Comments: 39 pages, 5 figures, 14 supporting figures

Electron ptychography achieves atomic-resolution limits set by lattice vibrations

Authors: Zhen Chen, Yi Jiang, Yu-Tsun Shao, Megan E. Holtz, Michal Odstrčil, Manuel Guizar-Sicairos, Isabelle Hanke, Steffen Ganschow, Darrell G. Schlom, David A. Muller

Abstract: Transmission electron microscopes use electrons with wavelengths of a few picometers, potentially capable of imaging individual atoms in solids at a resolution ultimately set by the intrinsic size of an atom. Unfortunately, due to imperfections in the imaging lenses and multiple scattering of electrons in the sample, the image resolution reached is 3 to 10 times worse. Here, by inversely solving t… ▽ More Transmission electron microscopes use electrons with wavelengths of a few picometers, potentially capable of imaging individual atoms in solids at a resolution ultimately set by the intrinsic size of an atom. Unfortunately, due to imperfections in the imaging lenses and multiple scattering of electrons in the sample, the image resolution reached is 3 to 10 times worse. Here, by inversely solving the multiple scattering problem and overcoming the aberrations of the electron probe using electron ptychography to recover a linear phase response in thick samples, we demonstrate an instrumental blurring of under 20 picometers. The widths of atomic columns in the measured electrostatic potential are now no longer limited by the imaging system, but instead by the thermal fluctuations of the atoms. We also demonstrate that electron ptychography can potentially reach a sub-nanometer depth resolution and locate embedded atomic dopants in all three dimensions with only a single projection measurement. △ Less

Submitted 2 January, 2021; originally announced January 2021.

Comments: 13 pages and 4 figures in the main text. Supplementary materials included

The Breakdown of Mott Physics at VO$_2$ Surfaces

Authors: Matthew J. Wahila, Nicholas F. Quackenbush, Jerzy T. Sadowski, Jon-Olaf Krisponeit, Jan Ingo Flege, Richard Tran, Shyue ** Ong, Christoph Schlueter, Tien-Lin Lee, Megan E. Holtz, David A. Muller, Hanjong Paik, Darrell G. Schlom, Wei-Cheng Lee, Louis F. J. Piper

Abstract: Transition metal oxides such as vanadium dioxide (VO$_2$), niobium dioxide (NbO$_2$), and titanium sesquioxide (Ti$_2$O$_3$) are known to undergo a temperature-dependent metal-insulator transition (MIT) in conjunction with a structural transition within their bulk. However, it is not typically discussed how breaking crystal symmetry via surface termination affects the complicated MIT physics. Usin… ▽ More Transition metal oxides such as vanadium dioxide (VO$_2$), niobium dioxide (NbO$_2$), and titanium sesquioxide (Ti$_2$O$_3$) are known to undergo a temperature-dependent metal-insulator transition (MIT) in conjunction with a structural transition within their bulk. However, it is not typically discussed how breaking crystal symmetry via surface termination affects the complicated MIT physics. Using synchrotron-based x-ray spectroscopy, low energy electron diffraction (LEED), low energy electron microscopy (LEEM), transmission electron microscopy (TEM), and several other experimental techniques, we show that suppression of the bulk structural transition is a common feature at VO$_2$ surfaces. Our density functional theory (DFT) calculations further suggest that this is due to inherent reconstructions necessary to stabilize the surface, which deviate the electronic structure away from the bulk d$^1$ configuration. Our findings have broader ramifications not only for the characterization of other "Mott-like" MITs, but also for any potential device applications of such materials. △ Less

Submitted 9 December, 2020; originally announced December 2020.

Transferring Orbital Angular Momentum to an Electron Beam Reveals Toroidal and Chiral Order

Authors: Kayla X. Nguyen, Yi Jiang, Michael C. Cao, Prafull Purohit, Ajay K. Yadav, Pablo García-Fernández, Mark W. Tate, Celesta S. Chang, Pablo Aguado-Puente, Jorge Íñiguez, Fernando Gomez-Ortiz, Sol M. Gruner, Javier Junquera, Lane W. Martin, Ramamoorthy Ramesh, D. A. Muller

Abstract: Orbital angular momentum and torque transfer play central roles in a wide range of magnetic textures and devices including skyrmions and spin-torque electronics(1-4). Analogous topological structures are now also being explored in ferroelectrics, including polarization vortex arrays in ferroelectric/dielectric superlattices(5). Unlike magnetic toroidal order, electric toroidal order does not coupl… ▽ More Orbital angular momentum and torque transfer play central roles in a wide range of magnetic textures and devices including skyrmions and spin-torque electronics(1-4). Analogous topological structures are now also being explored in ferroelectrics, including polarization vortex arrays in ferroelectric/dielectric superlattices(5). Unlike magnetic toroidal order, electric toroidal order does not couple directly to linear external fields. To develop a mechanism that can control switching in polarization vortices, we utilize a high-energy electron beam and show that transverse currents are generated by polar order in the ballistic limit. We find that the presence of an electric toroidal moment in a ferro-rotational phase transfers a measurable torque and orbital angular momentum to the electron beam. Furthermore, we find that the complex polarization patterns, observed in these heterostructures, are microscopically chiral with a non-trivial axial component of the polarization. This chirality opens the door for the coupling of ferroelectric and optical properties. △ Less

Submitted 9 December, 2020; v1 submitted 7 December, 2020; originally announced December 2020.

Revealing the Nanostructure of Mesoporous Fuel Cell Catalyst Supports for Durable, High-Power Performance

Authors: Matthew Ko, Elliot Padgett, Venkata Yarlagadda, Anusorn Kongkanand, David A. Muller

Abstract: Achieving high power performance and durability with low Pt loadings are critical challenges for proton exchange membrane fuel cells. PtCo catalysts developed on new carbon black supports show promise by simultaneously providing good oxygen reduction kinetics and local oxygen transport. We investigate the role of nanoscale morphology in the performance of these catalysts supported on accessible (H… ▽ More Achieving high power performance and durability with low Pt loadings are critical challenges for proton exchange membrane fuel cells. PtCo catalysts developed on new carbon black supports show promise by simultaneously providing good oxygen reduction kinetics and local oxygen transport. We investigate the role of nanoscale morphology in the performance of these catalysts supported on accessible (HSC-e and HSC-f) and conventional (Ketjen Black) porous carbons using 3D electron tomography, nitrogen sorption, and electrochemical performance measurements. We find that the accessible porous carbons have hollow interiors with mesopores that are larger and more numerous than conventional porous carbons. However, mesopore-sized openings (>2nm width) are too rare to account for significant oxygen transport. Instead we propose the primary oxygen transport pathway into the interior is through 1-2nm microporous channels permeating the carbon. The increased mesoporosity in the accessible porous carbons results in a shorter diffusion pathlength through constrictive, tortuous micropores in the support shell leading to lower local oxygen transport resistance. In durability testing, the accessible porous carbons show faster rates of electrochemical surface area loss, likely from fewer constrictive pores that would mitigate coarsening, but maintain superior high current density performance at end of life from the improved local oxygen transport. △ Less

Submitted 4 December, 2020; originally announced December 2020.

Comments: 26 pages, 7 figures, 1 table. Submitted to Journal of the Electrochemical Society

$γ$-phase Inclusions as Common Defects in Alloyed $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ and Doped $β$-Ga$_2$O$_3$ Films

Authors: Celesta S. Chang, Nicholas Tanen, Vladimir Protasenko, Thaddeus J. Asel, Shin Mou, Huili Grace Xing, Debdeep Jena, David A. Muller

Abstract: $β$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the thermodynamically-unstable $γ$-phase is a ubiquitous defect in both $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films and doped $β$-Ga$_2$O$_3… ▽ More $β$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the thermodynamically-unstable $γ$-phase is a ubiquitous defect in both $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films and doped $β$-Ga$_2$O$_3$ films grown by molecular beam epitaxy. For undoped $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films we observe $γ$-phase inclusions between nucleating islands of the $β$-phase at lower growth temperatures (~400-600 $^{\circ}$C). In doped $β$-Ga$_2$O$_3$, a thin layer of the $γ$-phase is observed on the surfaces of films grown with a wide range of n-type dopants and dopant concentrations. The thickness of the $γ$-phase layer was most strongly correlated with the growth temperature, peaking at about 600 $^{\circ}$C. Ga interstitials are observed in $β$-phase, especially near the interface with the $γ$-phase. By imaging the same region of the surface of a Sn-doped $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ after ex-situ heating up to 400 $^{\circ}$C, a $γ$-phase region is observed to grow above the initial surface, accompanied by a decrease in Ga interstitials in the $β$-phase. This suggests that the diffusion of Ga interstitials towards the surface is likely the mechanism for growth of the surface $γ$-phase, and more generally that the more-open $γ$-phase may offer diffusion pathways to be a kinetically-favored and early-forming phase in the growth of Ga$_2$O$_3$. △ Less

Submitted 30 November, 2020; originally announced December 2020.

Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy

Authors: Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffman, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom

Abstract: This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the a… ▽ More This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the adsorption-controlled growth of Ga2O3 by MBE. We present growth rates up to 1.6 micrometer per hour for Ga2O3--Al2O3 heterostructures with unprecedented crystalline quality and also at unparalleled low growth temperature for this level of perfection. We combine thermodynamic knowledge of how to create molecular-beams of targeted suboxides with a kinetic model developed for the S-MBE of III-VI compounds to identify appropriate growth conditions. Using S-MBE we demonstrate the growth of phase-pure, smooth, and high-purity homoepitaxial Ga2O3 films that are thicker than 4 micrometer. With the high growth rate of S-MBE we anticipate a significant improvement to vertical Ga2O3-based devices. We describe and demonstrate how this growth method can be applied to a wide-range of oxides. S-MBE rivals leading synthesis methods currently used for the production of Ga2O3-based devices. △ Less

Submitted 30 October, 2020; originally announced November 2020.

Comments: 15 pages, 12 figures

Tuning the convergence angle for optimum STEM performance

Authors: Matthew Weyland, David A. Muller

Abstract: The achievable instrumental performance of a scanning transmission electron microscope (STEM) is determined by the size and shape of the incident electron probe. The most important optical factor in achieving the optimum probe profile is the radius of the probe-forming aperture, which determines the convergence semi-angle of the illumination. What is often overlooked however is that small deviatio… ▽ More The achievable instrumental performance of a scanning transmission electron microscope (STEM) is determined by the size and shape of the incident electron probe. The most important optical factor in achieving the optimum probe profile is the radius of the probe-forming aperture, which determines the convergence semi-angle of the illumination. What is often overlooked however is that small deviations from this optimum can degrade both the resolution and interpretability of image contrast. A 30% error in aperture radius can lead to a factor of 2 contrast reduction in typical lattice spacings, and a 5 Å error in the thickness measurement of thin layers (such as gate oxides). Theoretical calculations of the optimum convergence angles, from a wave-optical consideration of the probe forming conditions, are explained and their consequences discussed. An experimental approach to the measurement and tuning of the convergence angle is then introduced. This is intended for uncorrected electron microscopes. For corrected instruments, Cs=0, and Cc usually determines the choice of aperture - see e.g. ULTRAMICROSCOPY 108, (2008) 1454-1466 △ Less

Submitted 28 August, 2020; originally announced August 2020.

Comments: 12 pages, 11 figures

Report number: Old internal report from 2006

Observation of strong bulk dam**-like spin-orbit torque in chemically disordered ferromagnetic single layers

Authors: Lijun Zhu, Xiyue S. Zhang, David A. Muller, Daniel C. Ralph, Robert A. Buhrman

Abstract: Strong dam**-like spin-orbit torque (τDL) has great potential for enabling ultrafast energy-efficient magnetic memories, oscillators, and logic. So far, the reported τDL exerted on a thin-film magnet must result from an externally generated spin current or from an internal non-equilibrium spin polarization in noncentrosymmetric GaMnAs single crystals. Here, we for the first time demonstrate a ve… ▽ More Strong dam**-like spin-orbit torque (τDL) has great potential for enabling ultrafast energy-efficient magnetic memories, oscillators, and logic. So far, the reported τDL exerted on a thin-film magnet must result from an externally generated spin current or from an internal non-equilibrium spin polarization in noncentrosymmetric GaMnAs single crystals. Here, we for the first time demonstrate a very strong, unexpected τDL from current flow within ferromagnetic single layers of chemically disordered, face-centered-cubic CoPt. We establish that the novel τDL is a bulk effect, with the strength per unit current density increasing monotonically with the CoPt thickness, and is insensitive to the presence or absence of spin sinks at the CoPt surfaces. This τDL most likely arises from a net transverse spin polarization associated with a strong spin Hall effect (SHE), while there is no detectable long-range asymmetry in the material. These results broaden the scope of spin-orbitronics and provide a novel avenue for develo** single-layer-based spin-torque memory, oscillator, and logic technologies. △ Less

Submitted 19 August, 2020; v1 submitted 12 August, 2020; originally announced August 2020.

Comments: This manuscript is a primary version, see Advanced Functional Materials for the updated manuscript and for the supporting information

Journal ref: Advanced Functional Material, 202005201(2020)

Dimensionality-induced change in topological order in multiferroic oxide superlattices

Authors: Megan E. Holtz, Elliot S. Padgett, Rachel Steinhardt, Charles M. Brooks, Dennis Meier, Darrell G. Schlom, David A. Muller, Julia A. Mundy

Abstract: We construct ferroelectric (LuFeO3)m/(LuFe2O4) superlattices with varying index m to study the effect of confinement on topological defects. We observe a thickness-dependent transition from neutral to charged domain walls and the emergence of fractional vortices. In thin LuFeO3 layers, the volume fraction of domain walls grows, lowering the symmetry from P63cm to P3c1 before reaching the non-polar… ▽ More We construct ferroelectric (LuFeO3)m/(LuFe2O4) superlattices with varying index m to study the effect of confinement on topological defects. We observe a thickness-dependent transition from neutral to charged domain walls and the emergence of fractional vortices. In thin LuFeO3 layers, the volume fraction of domain walls grows, lowering the symmetry from P63cm to P3c1 before reaching the non-polar P63/mmc state, analogous to the high-temperature ferroelectric to paraelectric transition. Our study shows how dimensional confinement stabilizes textures beyond those in bulk ferroelectric systems. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Lett. 126, 157601 (2021)

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire

Authors: Riena **no, Celesta S. Chang, Takeyoshi Onuma, Yong** Cho, Shao-Ting Ho, Michael C. Cao, Kevin Lee, Vladimir Protasenko, Darrell G. Schlom, David A. Muller, Huili G. Xing, Debdeep Jena

Abstract: Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphi… ▽ More Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the $α$- to the narrower bandgap $β$-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a range beyond the reach of all other semiconductor families, heralding the successful epitaxial stabilization of the largest bandgap materials family to date. △ Less

Submitted 16 July, 2020; v1 submitted 7 July, 2020; originally announced July 2020.

Comments: 22 pages, 8 figures

Operando Control of Skyrmion Density in a Lorentz Transmission Electron Microscope with Current Pulses

Authors: Albert M. Park, Zhen Chen, Xiyue S. Zhang, Lijun Zhu, David A. Muller, Gregory D. Fuchs

Abstract: Magnetic skyrmions hold promise for spintronic devices. To explore the dynamical properties of skyrmions in devices, a nanoscale method to image spin textures in response to a stimulus is essential. Here, we apply a technique for operando electrical current pulsing of chiral magnetic devices in a Lorentz transmission electron microscope. In ferromagnetic multilayers with interfacial Dzyaloshinskii… ▽ More Magnetic skyrmions hold promise for spintronic devices. To explore the dynamical properties of skyrmions in devices, a nanoscale method to image spin textures in response to a stimulus is essential. Here, we apply a technique for operando electrical current pulsing of chiral magnetic devices in a Lorentz transmission electron microscope. In ferromagnetic multilayers with interfacial Dzyaloshinskii-Moriya interaction (DMI), we study the creation and annihilation of skyrmions localized by point-like pinning sites due to defects. Using a combination of experimental and micromagnetic techniques, we establish a thermal contribution for the creation and annihilation of skyrmions in our study. Our work reveals a mechanism for controlling skyrmion density, which enables an examination of skyrmion magnetic field stability as a function of density. We find that high-density skyrmion states are more stable than low-density states or isolated skyrmions resisting annihilation over a magnetic field range that increases monotonically with density. △ Less

Submitted 30 June, 2020; originally announced June 2020.

Comments: 24 pages, 8 figures with SI, double spaced

Bidirectional Self-Folding with Atomic Layer Deposition Nanofilms for Microscale Origami

Authors: Baris Bircan, Marc Z. Miskin, Robert J. Lang, Michael C. Cao, Kyle J. Dorsey, Muhammad G. Salim, Wei Wang, David A. Muller, Paul L. McEuen, Itai Cohen

Abstract: Origami design principles are scale invariant and enable direct miniaturization of origami structures provided the sheets used for folding have equal thickness to length ratios. Recently, seminal steps have been taken to fabricate microscale origami using unidirectionally actuated sheets with nanoscale thickness. Here, we extend the full power of origami-inspired fabrication to nanoscale sheets by… ▽ More Origami design principles are scale invariant and enable direct miniaturization of origami structures provided the sheets used for folding have equal thickness to length ratios. Recently, seminal steps have been taken to fabricate microscale origami using unidirectionally actuated sheets with nanoscale thickness. Here, we extend the full power of origami-inspired fabrication to nanoscale sheets by engineering bidirectional folding with 4 nm thick atomic layer deposition (ALD) SiNx-SiO2 bilayer films. Strain differentials within these bilayers result in bending, producing microscopic radii of curvature. We lithographically pattern these bilayers and localize the bending using rigid panels to fabricate a variety of complex micro-origami devices. Upon release, these devices self-fold according to prescribed patterns. Our approach combines planar semiconductor microfabrication methods with computerized origami design, making it easy to fabricate and deploy such microstructures en masse. These devices represent an important step forward in the fabrication and assembly of deployable micromechanical systems that can interact with and manipulate micro- and nanoscale environments. △ Less

Submitted 18 June, 2020; originally announced June 2020.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright American Chemical Society after peer review. To access the final edited and published work see: https://pubs.acs.org/articlesonrequest/AOR-JJHKJZVTJF4JFWSYZ2NW

Role of Dirac nodal lines and strain on the high spin Hall conductivity of epitaxial IrO2 thin films

Authors: Arnab Bose, Jocienne N. Nelson, Xiyue S. Zhang, Rakshit Jain, D. G. Schlom, D. C. Ralph, D. A. Muller, K. M. Shen, R. A. Buhrman

Abstract: Since the discovery of a 'giant' spin Hall effect (SHE) in certain heavy metal elements there has been an intense effort to identify and develop new and technologically viable, heavy-metal-based thin film materials that could generate spin currents with even greater efficiency to exert spin-orbit torques (SOT) on adjacent ferromagnetic nanostructures. In parallel, there have been wide ranging fund… ▽ More Since the discovery of a 'giant' spin Hall effect (SHE) in certain heavy metal elements there has been an intense effort to identify and develop new and technologically viable, heavy-metal-based thin film materials that could generate spin currents with even greater efficiency to exert spin-orbit torques (SOT) on adjacent ferromagnetic nanostructures. In parallel, there have been wide ranging fundamental studies of the spin currents that can arise from robust, intrinsic spin-orbit interaction (SOI) effects in more exotic systems including topological insulators, transition metal dichalcogenides with broken crystalline symmetry, Weyl and Dirac semimetals where gapless electronic excitations are protected by topology and symmetry. Here we experimentally study strong SOT from the topological semimetal IrO2 in (001) and (110) normal films, which exhibit distinctly different SHE strengths. Angle resolved photoemission spectroscopy studies have shown IrO2 exhibits Dirac nodal lines (DNL) in the band structure, which could enable a very high spin Hall conductivity (SHC). The (001) films exhibit exceptionally high dam** like torque efficiency ranging from 0.45 at 293 K to 0.65 at 30 K which sets the lower bound of SHC that is ten times higher and of opposite sign than the theoretical prediction. We observe a substantial reduction of SHC in anisotropically strained (110) films, which suggests that the DNLs that are present in the (001) films and contribute to SHC, are disrupted and gapped due to the large anisotropic strain in (110) films, which in turn significantly lowers SHC. Very large value of SHC at room temperature of this Dirac semimetal could be very promising for the practical application. △ Less

Submitted 8 June, 2020; originally announced June 2020.

Journal ref: Applied Materials and Interfaces 2020

Electron tomography for functional nanomaterials

Authors: Robert Hovden, David A. Muller

Abstract: Modern nanomaterials contain complexity that spans all three dimensions - from multigate semiconductors to clean energy nanocatalysts to complex block copolymers. For nanoscale characterization, it has been a long-standing goal to observe and quantify the three-dimensional (3D) structure - not just surfaces, but the entire internal volume and the chemical arrangement. Electron tomography estimates… ▽ More Modern nanomaterials contain complexity that spans all three dimensions - from multigate semiconductors to clean energy nanocatalysts to complex block copolymers. For nanoscale characterization, it has been a long-standing goal to observe and quantify the three-dimensional (3D) structure - not just surfaces, but the entire internal volume and the chemical arrangement. Electron tomography estimates the complete 3D structure of nanomaterials from a series of two-dimensional projections taken across many viewing angles. Since its first introduction in 1968, electron tomography has progressed substantially in resolution, dose, and chemical sensitivity. In particular, scanning transmission electron microscope tomography has greatly enhanced the study of 3D nanomaterials by providing quantifiable internal morphology and spectroscopic detection of elements. Combined with recent innovations in computational reconstruction algorithms and 3D visualization tools, scientists can interactively dissect volumetric representations and extract meaningful statistics of specimens. This article highlights the maturing field of electron tomography and the widening scientific applications that utilize 3D structural, chemical, and functional imaging at the nanometer and subnanometer length scales. △ Less

Submitted 2 June, 2020; originally announced June 2020.

Comments: 6 figures

Journal ref: MRS Bulletin Volume 45, Issue 4, April 2020, pp. 298-304

Imaging Polarity in Two Dimensional Materials by Breaking Friedel's Law

Authors: Pratiti Deb, Michael C. Cao, Yimo Han, Megan E. Holtz, Saien Xie, Jiwoong Park, Robert Hovden, David A. Muller

Abstract: Friedel's law guarantees an inversion-symmetric diffraction pattern for thin, light materials where a kinematic approximation or a single-scattering model holds. Typically, breaking Friedel symmetry is ascribed to multiple scattering events within thick, non-centrosymmetric crystals. However, two-dimensional (2D) materials such as a single monolayer of MoS$_2$ can also violate Friedel's law, with… ▽ More Friedel's law guarantees an inversion-symmetric diffraction pattern for thin, light materials where a kinematic approximation or a single-scattering model holds. Typically, breaking Friedel symmetry is ascribed to multiple scattering events within thick, non-centrosymmetric crystals. However, two-dimensional (2D) materials such as a single monolayer of MoS$_2$ can also violate Friedel's law, with unexpected contrast between conjugate Bragg peaks. We show analytically that retaining higher order terms in the power series expansion of the scattered wavefunction can describe the anomalous contrast between $hkl$ and $\overline{hkl}$ peaks that occurs in 2D crystals with broken in-plane inversion symmetry. These higher-order terms describe multiple scattering paths starting from the same atom in an atomically thin material. Furthermore, 2D materials containing heavy elements, such as WS$_2$, always act as strong phase objects, violating Friedel's law no matter how high the energy of the incident electron beam. Experimentally, this understanding can enhance diffraction-based techniques to provide rapid imaging of polarity, twin domains, in-plane rotations, or other polar textures in 2D materials. △ Less

Submitted 6 May, 2020; originally announced May 2020.

Comments: 26 pages, 5 main figures, 3 supplemental figures, submitted to Ultramicroscopy

Overcoming information reduced data and experimentally uncertain parameters in ptychography with regularized optimization

Authors: Marcel Schloz, Thomas C. Pekin, Zhen Chen, Wouter Van den Broek, David A. Muller, Christoph T. Koch

Abstract: The overdetermination of the mathematical problem underlying ptychography is reduced by a host of experimentally more desirable settings. Furthermore, reconstruction of the sample-induced phase shift is typically limited by uncertainty in the experimental parameters and finite sample thicknesses. Presented is a conjugate gradient descent algorithm, regularized optimization for ptychography (ROP),… ▽ More The overdetermination of the mathematical problem underlying ptychography is reduced by a host of experimentally more desirable settings. Furthermore, reconstruction of the sample-induced phase shift is typically limited by uncertainty in the experimental parameters and finite sample thicknesses. Presented is a conjugate gradient descent algorithm, regularized optimization for ptychography (ROP), that recovers the partially known experimental parameters along with the phase shift, improves resolution by incorporating the multislice formalism to treat finite sample thicknesses, and includes regularization in the optimization process, thus achieving reliable results from noisy data with severely reduced and underdetermined information. △ Less

Submitted 8 July, 2020; v1 submitted 4 May, 2020; originally announced May 2020.

Comments: 18 pages, 7 figures, 3 tables

In situ modification of delafossite type PdCoO2 bulk single crystal for reversible hydrogen sorption and fast hydrogen evolution

Authors: Guowei Li, Seunghyun Khim, Celesta S. Chang, Chenguang Fu, Nabhanila Nandi, Fan Li, Qun Yang, Graeme R. Blake, Stuart Parkin, Gudrun Auffermann, Yan Sun, David A. Muller, Andrew P. Mackenzie, Claudia Felser

Abstract: The observation of extraordinarily high conductivity in delafossite-type PdCoO2 is of great current interest, and there is some evidence that electrons behave like a fluid when flowing in bulk crystals of PdCoO2. Thus, this material is an ideal platform for the study of the electron transfer processes in heterogeneous reactions. Here, we report the use of bulk single crystal PdCoO2 as a promising… ▽ More The observation of extraordinarily high conductivity in delafossite-type PdCoO2 is of great current interest, and there is some evidence that electrons behave like a fluid when flowing in bulk crystals of PdCoO2. Thus, this material is an ideal platform for the study of the electron transfer processes in heterogeneous reactions. Here, we report the use of bulk single crystal PdCoO2 as a promising electrocatalyst for hydrogen evolution reactions (HERs). An overpotential of only 31 mV results in a current density of 10 mA cm^(-2), accompanied by high long-term stability. We have precisely determined that the crystal surface structure is modified after electrochemical activation with the formation of strained Pd nanoclusters in the surface layer. These nanoclusters exhibit reversible hydrogen sorption and desorption, creating more active sites for hydrogen access. The bulk PdCoO2 single crystal with ultra-high conductivity, which acts as a natural substrate for the Pd nanoclusters, provides a high-speed channel for electron transfer △ Less

Submitted 25 March, 2020; originally announced March 2020.

Lossless monochromation for electron microscopy with pulsed photoemission sources and rf cavities

Authors: Cameron J. R. Duncan, David A. Muller, Jared M. Maxson

Abstract: Resonant radiofrequency cavities enable exquisite time-energy control of electron beams when synchronized with laser driven photoemission. We present a lossless monochromator design that exploits this fine control in the one-electron-per-pulse regime. The theoretically achievable maximum beam current on target is orders of magnitude greater than state-of-the-art monochromators for the same spatial… ▽ More Resonant radiofrequency cavities enable exquisite time-energy control of electron beams when synchronized with laser driven photoemission. We present a lossless monochromator design that exploits this fine control in the one-electron-per-pulse regime. The theoretically achievable maximum beam current on target is orders of magnitude greater than state-of-the-art monochromators for the same spatial and energy resolution. This improvement is the result of monochromating in the time domain, unconstrained by the transverse brightness of the electron source. We show analytically and confirm numerically that cavity parameters chosen to minimize energy spread perform the additional function of undoing the appreciable effect of chromatic aberration in the upstream optics. We argue that our design has significant applications in both ultra-fast and non-time-resolved microscopy, provided photoelectron sources of sufficiently small size and laser sources of sufficiently high repetition rate. Our design achieves in simulations more than two orders of magnitude reduction in beam energy spread, down to single digit meV. Overcoming the minimum probe-size limit that chromatic aberration imposes, our design clears a path for high-current, high-resolution electron beam applications at primary energies from single to hundreds of keV. △ Less

Submitted 5 January, 2021; v1 submitted 25 February, 2020; originally announced February 2020.

Journal ref: Phys. Rev. Applied 14, 014060 (2020)

Structural Heterogeneity, Ductility, and Glass Forming Ability of Zr-Based Metallic Glasses

Authors: Soohyun Im, Pengyang Zhao, Geun Hee Yoo, Zhen Chen, Gabriel Calderon, Mehrdad Abbasi Gharacheh, Olivia Licata, Baishakhi Mazumder, David A. Muller, Eun Soo Park, Yunzhi Wang, **woo Hwang

Abstract: We show the correlation between nanoscale structural heterogeneity and mechanical property and glass forming ability of Zr-based metallic glasses (MGs). Detailed parameters of medium range ordering (MRO) that constitutes the structural heterogeneity, including the type, size, and volume fraction of MRO domains determined using 4-dimensional scanning transmission electron microscopy, directly corre… ▽ More We show the correlation between nanoscale structural heterogeneity and mechanical property and glass forming ability of Zr-based metallic glasses (MGs). Detailed parameters of medium range ordering (MRO) that constitutes the structural heterogeneity, including the type, size, and volume fraction of MRO domains determined using 4-dimensional scanning transmission electron microscopy, directly correlate with the ductility and glass forming ability of Zr-Cu-Co-Al MGs. Mesoscale deformation simulation incorporating the experimentally determined MRO confirms that the diverse types and sizes of MRO can significantly influence the MGs' mechanical behavior. △ Less

Submitted 21 February, 2020; originally announced February 2020.

Disentangling magnetic and grain contrast in polycrystalline FeGe thin films using four-dimensional Lorentz scanning transmission electron microscopy

Authors: Kayla X. Nguyen, Xiyue S. Zhang, Emrah Turgut, Michael C. Cao, Jack Glaser, Zhen Chen, Matthew J. Stolt, Celesta S. Chang, Yu-Tsun Shao, Song **, Gregory D. Fuchs, David A. Muller

Abstract: The study of nanoscale chiral magnetic order in polycrystalline materials with a strong Dzyaloshinkii-Moriya interaction (DMI) is interesting for the observation of magnetic phenomena at grain boundaries and interfaces. One such material is sputter-deposited B20 FeGe on Si, which has been actively investigated as the basis for low-power, high-density magnetic memory technology in a scalable materi… ▽ More The study of nanoscale chiral magnetic order in polycrystalline materials with a strong Dzyaloshinkii-Moriya interaction (DMI) is interesting for the observation of magnetic phenomena at grain boundaries and interfaces. One such material is sputter-deposited B20 FeGe on Si, which has been actively investigated as the basis for low-power, high-density magnetic memory technology in a scalable material platform. Although conventional Lorentz electron microscopy provides the requisite spatial resolution to probe chiral magnetic textures in single-crystal FeGe, probing the magnetism of sputtered B20 FeGe is more challenging because the sub-micron crystal grains add confounding contrast. We address the challenge of disentangling magnetic and grain contrast by applying 4-dimensional Lorentz scanning transmission electron microscopy using an electron microscope pixel array detector. Supported by analytical and numerical models, we find that the most important parameter for imaging magnetic materials with polycrystalline grains is the ability for the detector to sustain large electron doses, where having a high-dynamic range detector becomes extremely important. Despite the small grain size in sputtered B20 FeGe on Si, using this approach we are still able to observe helicity switching of skyrmions and magnetic helices across two adjacent grains as they thread through neighboring grains. We reproduce this effect using micromagnetic simulations by assuming that the grains have distinct orientation and magnetic chirality and find that magnetic helicity couples to crystal chirality. Our methodology for imaging magnetic textures is applicable to other thin-film magnets used for spintronics and memory applications, where an understanding of how magnetic order is accommodated in polycrystalline materials is important. △ Less

Submitted 7 March, 2022; v1 submitted 19 January, 2020; originally announced January 2020.

Comments: 22 pages, 8 figures, 2 appendix figures