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Measuring data types
Authors:
Lukas Mulder,
Paige Randall North,
Maximilien Péroux
Abstract:
In this article, we combine Sweedler's classic theory of measuring coalgebras -- by which $k$-algebras are enriched in $k$-coalgebras for $k$ a field -- with the theory of W-types -- by which the categorical semantics of inductive data types in functional programming languages are understood. In our main theorem, we find that under some hypotheses, algebras of an endofunctor are enriched in coalge…
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In this article, we combine Sweedler's classic theory of measuring coalgebras -- by which $k$-algebras are enriched in $k$-coalgebras for $k$ a field -- with the theory of W-types -- by which the categorical semantics of inductive data types in functional programming languages are understood. In our main theorem, we find that under some hypotheses, algebras of an endofunctor are enriched in coalgebras of the same endofunctor, and we find polynomial endofunctors provide many interesting examples of this phenomenon. We then generalize the notion of initial algebra of an endofunctor using this enrichment, thus generalizing the notion of W-type. This article is an extended version of arXiv:2303.16793, it adds expository introductions to the original theories of measuring coalgebras and W-types along with some improvements to the main theory and many explicitly worked examples.
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Submitted 23 May, 2024;
originally announced May 2024.
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Fast Meta-Analytic Approximations for Relational Event Models: Applications to Data Streams and Multilevel Data
Authors:
Fabio Vieira Roger Leenders Joris Mulder
Abstract:
Large relational-event history data stemming from large networks are becoming increasingly available due to recent technological developments (e.g. digital communication, online databases, etc). This opens many new doors to learning about complex interaction behavior between actors in temporal social networks. The relational event model has become the gold standard for relational event history ana…
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Large relational-event history data stemming from large networks are becoming increasingly available due to recent technological developments (e.g. digital communication, online databases, etc). This opens many new doors to learning about complex interaction behavior between actors in temporal social networks. The relational event model has become the gold standard for relational event history analysis. Currently, however, the main bottleneck to fit relational events models is of computational nature in the form of memory storage limitations and computational complexity. Relational event models are therefore mainly used for relatively small data sets while larger, more interesting datasets, including multilevel data structures and relational event data streams, cannot be analyzed on standard desktop computers. This paper addresses this problem by develo** approximation algorithms based on meta-analysis methods that can fit relational event models significantly faster while avoiding the computational issues. In particular, meta-analytic approximations are proposed for analyzing streams of relational event data and multilevel relational event data and potentially of combinations thereof. The accuracy and the statistical properties of the methods are assessed using numerical simulations. Furthermore, real-world data are used to illustrate the potential of the methodology to study social interaction behavior in an organizational network and interaction behavior among political actors. The algorithms are implemented in a publicly available R package 'remx'.
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Submitted 27 February, 2024; v1 submitted 12 December, 2023;
originally announced December 2023.
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Spectroscopic signature of surface states and bunching of bulk subbands in topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ thin films
Authors:
L. Mulder,
C. Castenmiller,
F. J. Witmans,
S. Smit,
M. S. Golden,
H. J. W. Zandvliet,
P. L. de Boeij,
A. Brinkman
Abstract:
High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission spectroscopy and in situ scanning tunneling spectroscopy. The experimental results reveal striking similarities with relativistic ab-initio tight binding calculatio…
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High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission spectroscopy and in situ scanning tunneling spectroscopy. The experimental results reveal striking similarities with relativistic ab-initio tight binding calculations. We find that ultrathin slabs of the three-dimensional topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ display topological surface states, surface states with large weight on the outermost Te atomic layer, and dispersive bulk energy levels that are quantized. We observe that the bandwidth of the bulk levels is strongly reduced. These bunched bulk states as well as the surface states give rise to strong peaks in the local density of states.
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Submitted 23 December, 2021; v1 submitted 21 December, 2021;
originally announced December 2021.
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Origin of the butterfly magnetoresistance in ZrSiS
Authors:
J. A. Voerman,
L. Mulder,
J. C. de Boer,
Y. Huang,
L. M. Schoop,
Chuan Li,
A. Brinkman
Abstract:
ZrSiS has been identified as a topological material made from non-toxic and earth-abundant elements. Together with its extremely large and uniquely angle-dependent magnetoresistance this makes it an interesting material for applications. We study the origin of the so-called butterfly magnetoresistance by performing magnetotransport measurements on four different devices made from exfoliated crysta…
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ZrSiS has been identified as a topological material made from non-toxic and earth-abundant elements. Together with its extremely large and uniquely angle-dependent magnetoresistance this makes it an interesting material for applications. We study the origin of the so-called butterfly magnetoresistance by performing magnetotransport measurements on four different devices made from exfoliated crystalline flakes. We identify near-perfect electron-hole compensation, tuned by the Zeeman effect, as the source of the butterfly magnetoresistance. Furthermore, the observed Shubnikov-de Haas oscillations are carefully analyzed using the Lifshitz-Kosevich equation to determine their Berry phase and thus their topological properties. Although the link between the butterfly magnetoresistance and the Berry phase remains uncertain, the topological nature of ZrSiS is confirmed.
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Submitted 22 October, 2019;
originally announced October 2019.
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Tunable Frohlich Polarons in Organic Single-Crystal Transistors
Authors:
I. N. Hulea,
S. Fratini,
H. Xie,
C. L. Mulder,
N. N. Iossad,
G. Rastelli,
S. Ciuchi,
A. F. Morpurgo
Abstract:
In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device performance- has been related to the quality of the organic semiconductor. Recently, it has been appreciated that also the nearby dielectric has an unexpectedly s…
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In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device performance- has been related to the quality of the organic semiconductor. Recently, it has been appreciated that also the nearby dielectric has an unexpectedly strong influence. The mechanisms responsible for this influence are not understood. To investigate these mechanisms we have studied transport through organic single crystal FETs with different gate insulators. We find that the temperature dependence of the mobility evolves from metallic-like to insulating-like with increasing the dielectric constant of the insulator. The phenomenon is accounted for by a two-dimensional Frohlich polaron model that quantitatively describes our observations and shows that increasing the dielectric polarizability results in a crossover from the weak to the strong polaronic coupling regime.
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Submitted 4 December, 2006;
originally announced December 2006.
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Ambipolar Cu- and Fe-Phthalocyanine single-crystal field-effect transistors
Authors:
R. W. I. de Boer,
A. F. Stassen,
M. F. Craciun,
C. L. Mulder,
A. Molinari,
S. Rogge,
A. F. Morpurgo
Abstract:
We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of Copper- and Iron-Phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In these devices, the room-temperature mobility of holes reaches 0.3 cm$^2$/Vs in both materials. The highest mobility for electrons is observed for Iron-Phthaloc…
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We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of Copper- and Iron-Phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In these devices, the room-temperature mobility of holes reaches 0.3 cm$^2$/Vs in both materials. The highest mobility for electrons is observed for Iron-Phthalocyanines and is approximately one order of magnitude lower. Our measurements indicate that these values are limited by extrinsic contact effects due to the transistor fabrication and suggest that considerably higher values for the electron and hole mobility can be achieved in these materials.
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Submitted 11 March, 2005;
originally announced March 2005.
