-
Single-laser feedback cooling of optomechanical resonators
Authors:
Arvind Shankar Kumar,
Joonas Nätkinniemi,
Henri Lyyra,
Juha T. Muhonen
Abstract:
Measurement-based control has emerged as an important technique to prepare mechanical resonators in pure quantum states for applications in quantum information processing and quantum sensing. Conventionally this has required two separate channels, one for probing the motion and another one acting back on the resonator. In this work, we analyze and experimentally demonstrate a technique of single-l…
▽ More
Measurement-based control has emerged as an important technique to prepare mechanical resonators in pure quantum states for applications in quantum information processing and quantum sensing. Conventionally this has required two separate channels, one for probing the motion and another one acting back on the resonator. In this work, we analyze and experimentally demonstrate a technique of single-laser feedback cooling, where one laser is used for both probing and controlling the mechanical motion. We show using an analytical model and experiments that feedback cooling is feasible in this mode as long as certain stability requirements are fulfilled. Our results demonstrate that, in addition to being more experimentally feasible construction, the interference effects of the single-laser feedback can actually be used to enhance cooling at some parameter regimes.
△ Less
Submitted 28 September, 2022; v1 submitted 13 September, 2022;
originally announced September 2022.
-
Quadrature-averaged homodyne detection for cavity parameter estimation
Authors:
Giada R. La Gala,
Arvind S. Kumar,
Rick Leijssen,
Ewold Verhagen,
Juha T. Muhonen
Abstract:
Balanced homodyne interferometry is a well-known detection technique that allows for sensitive characterization of light fields. Conventionally a homodyne interferometer is operated by locking the relative phase of a reference beam to the signal beam by means of an active feedback loop. A less often used method is to perform a slow continuous modulation of the reference beam arm length that corres…
▽ More
Balanced homodyne interferometry is a well-known detection technique that allows for sensitive characterization of light fields. Conventionally a homodyne interferometer is operated by locking the relative phase of a reference beam to the signal beam by means of an active feedback loop. A less often used method is to perform a slow continuous modulation of the reference beam arm length that corresponds to averaging all relative phases during the measurement.Here we show theoretically and experimentally that this quadrature averaging can be advantageous in estimating the parameters of a resonant optical cavity. We demonstrate that the averaging turns the transduction function, from cavity frequency fluctuations into the interferometer signal, into a simple function of the laser detuning that, notably, does not depend on the parameters of possible non-resonant channels present in the system. The method needs no active feedback and gives results that are easy to interpret. Moreover, the phase-averaged measurement allows to characterize the absolute magnitude of a cavity frequency modulation.
△ Less
Submitted 13 September, 2022;
originally announced September 2022.
-
Strain effects in phosphorous bound exciton transitions in silicon
Authors:
Teemu Loippo,
Antti Kanniainen,
Juha T. Muhonen
Abstract:
Donor spin states in silicon are a promising candidate for quantum information processing. One possible donor spin readout mechanism is the bound exciton transition that can be excited optically and creates an electrical signal when it decays. This transition has been extensively studied in bulk, but in order to scale towards localized spin readout, microfabricated structures are needed for detect…
▽ More
Donor spin states in silicon are a promising candidate for quantum information processing. One possible donor spin readout mechanism is the bound exciton transition that can be excited optically and creates an electrical signal when it decays. This transition has been extensively studied in bulk, but in order to scale towards localized spin readout, microfabricated structures are needed for detection. As these electrodes will inevitably cause strain in the silicon lattice, it will be crucial to understand how strain affects the exciton transitions. Here we study the phosphorous donor bound exciton transitions in silicon using hybrid electro-optical readout with microfabricated electrodes. We observe a significant zero-field splitting as well mixing of the hole states due to strain. We can model these effects assuming the known asymmetry of the hole g-factors and the Pikus-Bir Hamiltonian describing the strain. In addition, we describe the temperature, laser power and light polarization dependence of the transitions. Importantly, the hole-mixing should not prevent donor electron spin readout and using our measured parameters and numerical simulations we anticipate that hybrid spin readout in a silicon-on-insulator platform should be possible, allowing integration to silicon photonics platforms.
△ Less
Submitted 10 January, 2023; v1 submitted 7 July, 2022;
originally announced July 2022.
-
The effects of ion implantation damage to photonic crystal optomechanical resonators in silicon
Authors:
Cliona Shakespeare,
Teemu Loippo,
Henri Lyyra,
Juha T. Muhonen
Abstract:
Optomechanical resonators were fabricated on a silicon-on-insulator (SOI) substrate that had been implanted with phosphorus donors. The resonators' mechanical and optical properties were then measured (at 6 kelvin and room temperature) before and after the substrate was annealed. All measured resonators survived the annealing and their mechanical linewidths decreased while their optical and mechan…
▽ More
Optomechanical resonators were fabricated on a silicon-on-insulator (SOI) substrate that had been implanted with phosphorus donors. The resonators' mechanical and optical properties were then measured (at 6 kelvin and room temperature) before and after the substrate was annealed. All measured resonators survived the annealing and their mechanical linewidths decreased while their optical and mechanical frequencies increased. This is consistent with crystal lattice damage from the ion implantation causing the optical and mechanical properties to degrade and then subsequently being repaired by the annealing. We explain these effects qualitatively with changes in the silicon crystal lattice structure. We also report on some unexplained features in the pre-anneal samples. In addition, we report partial fabrication of optomechanical resonators with neon ion milling.
△ Less
Submitted 28 September, 2021;
originally announced September 2021.
-
Roadmap on quantum nanotechnologies
Authors:
Arne Laucht,
Frank Hohls,
Niels Ubbelohde,
M Fernando Gonzalez-Zalba,
David J Reilly,
Søren Stobbe,
Tim Schröder,
Pasquale Scarlino,
Jonne V Koski,
Andrew Dzurak,
Chih-Hwan Yang,
Jun Yoneda,
Ferdinand Kuemmeth,
Hendrik Bluhm,
Jarryd Pla,
Charles Hill,
Joe Salfi,
Akira Oiwa,
Juha T Muhonen,
Ewold Verhagen,
Matthew D LaHaye,
Hyun Ho Kim,
Adam W Tsen,
Dimitrie Culcer,
Attila Geresdi
, et al. (4 additional authors not shown)
Abstract:
Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing qu…
▽ More
Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon.
△ Less
Submitted 19 January, 2021;
originally announced January 2021.
-
State preparation and tomography of a nanomechanical resonator with fast light pulses
Authors:
Juha T. Muhonen,
Giada R. La Gala,
Rick Leijssen,
Ewold Verhagen
Abstract:
Pulsed optomechanical measurements enable squeezing, non-classical state creation and backaction-free sensing. We demonstrate pulsed measurement of a cryogenic nanomechanical resonator with record precision close to the quantum regime. We use these to prepare thermally squeezed and purified conditional mechanical states, and to perform full state tomography. These demonstrations exploit large phot…
▽ More
Pulsed optomechanical measurements enable squeezing, non-classical state creation and backaction-free sensing. We demonstrate pulsed measurement of a cryogenic nanomechanical resonator with record precision close to the quantum regime. We use these to prepare thermally squeezed and purified conditional mechanical states, and to perform full state tomography. These demonstrations exploit large photon-phonon coupling in a nanophotonic cavity to reach a single-pulse imprecision of 9 times the mechanical zero-point amplitude $x_\mathrm{zpf}$. We study the effect of other mechanical modes which limit the conditional state width to 58 $x_\mathrm{zpf}$, and show how decoherence causes the state to grow in time.
△ Less
Submitted 23 December, 2018;
originally announced December 2018.
-
Coherent control via weak measurements in $^{31}$P single-atom electron and nuclear spin qubits
Authors:
J. T. Muhonen,
J. P. Dehollain,
A. Laucht,
S. Simmons,
R. Kalra,
F. E. Hudson,
D. N. Jamieson,
J. C. McCallum,
K. M. Itoh,
A. S. Dzurak,
A. Morello
Abstract:
The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and the nuclear spin states of a single $^{31}$P donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be…
▽ More
The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and the nuclear spin states of a single $^{31}$P donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be used to coherently rotate the spin to a desired pure state. We explicitly demonstrate that phase coherence is preserved throughout multiple sequential single-shot weak measurements, and that the partial state collapse can be reversed. Second, we use the relation between measurement strength and perturbation of the nuclear state as a physical meter to extract the tunneling rates between the $^{31}$P donor and a nearby electron reservoir from data, conditioned on observing no tunneling events. Our experiments open avenues to measurement-based state preparation, steering and feedback protocols for spin systems in the solid state, and highlight the fundamental connection between information gain and state modification in quantum mechanics.
△ Less
Submitted 26 February, 2017;
originally announced February 2017.
-
Nonlinear cavity optomechanics with nanomechanical thermal fluctuations
Authors:
Rick Leijssen,
Giada La Gala,
Lars Freisem,
Juha T. Muhonen,
Ewold Verhagen
Abstract:
The inherently nonlinear interaction between light and motion in cavity optomechanical systems has experimentally been studied in a linearized description in all except highly driven cases. Here we demonstrate a nanoscale optomechanical system, in which the interaction between light and motion is so large (single-photon cooperativity $C_0 \approx 10^3$) that thermal motion induces optical frequenc…
▽ More
The inherently nonlinear interaction between light and motion in cavity optomechanical systems has experimentally been studied in a linearized description in all except highly driven cases. Here we demonstrate a nanoscale optomechanical system, in which the interaction between light and motion is so large (single-photon cooperativity $C_0 \approx 10^3$) that thermal motion induces optical frequency fluctuations larger than the intrinsic optical linewidth. The system thereby operates in a fully nonlinear regime, which pronouncedly impacts the optical response, displacement measurement, and radiation pressure backaction. Experiments show that the apparent optical linewidth is dominated by thermomechanically-induced frequency fluctuations over a wide temperature range. The nonlinearity induces breakdown of the traditional cavity optomechanical descriptions of thermal displacement measurements. Moreover, we explore how radiation pressure backaction in this regime affects the mechanical fluctuation spectra. The strong nonlinearity could serve as a resource to control the motional state of the resonator. We demonstrate the use of highly nonlinear transduction to perform a quadratic measurement of position while suppressing linear transduction.
△ Less
Submitted 23 December, 2016;
originally announced December 2016.
-
A single-atom quantum memory in silicon
Authors:
S. Freer,
S. Simmons,
A. Laucht,
J. T. Muhonen,
J. P. Dehollain,
R. Kalra,
F. A. Mohiyaddin,
F. Hudson,
K. M. Itoh,
J. C. McCallum,
D. N. Jamieson,
A. S. Dzurak,
A. Morello
Abstract:
Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coex…
▽ More
Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched $^{28}$Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity of $F_p =$81${\pm}$7%, a memory fidelity ($F_m$) of over 90%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses.
△ Less
Submitted 5 September, 2016; v1 submitted 25 August, 2016;
originally announced August 2016.
-
Optimization of a solid-state electron spin qubit using Gate Set Tomography
Authors:
Juan P. Dehollain,
Juha T. Muhonen,
Robin Blume-Kohout,
Kenneth M. Rudinger,
John King Gamble,
Erik Nielsen,
Arne Laucht,
Stephanie Simmons,
Rachpon Kalra,
Andrew S. Dzurak,
Andrea Morello
Abstract:
State of the art qubit systems are reaching the gate fidelities required for scalable quantum computation architectures. Further improvements in the fidelity of quantum gates demands characterization and benchmarking protocols that are efficient, reliable and extremely accurate. Ideally, a benchmarking protocol should also provide information on how to rectify residual errors. Gate Set Tomography…
▽ More
State of the art qubit systems are reaching the gate fidelities required for scalable quantum computation architectures. Further improvements in the fidelity of quantum gates demands characterization and benchmarking protocols that are efficient, reliable and extremely accurate. Ideally, a benchmarking protocol should also provide information on how to rectify residual errors. Gate Set Tomography (GST) is one such protocol designed to give detailed characterization of as-built qubits. We implemented GST on a high-fidelity electron-spin qubit confined by a single $^{31}$P atom in $^{28}$Si. The results reveal systematic errors that a randomized benchmarking analysis could measure but not identify, whereas GST indicated the need for improved calibration of the length of the control pulses. After introducing this modification, we measured a new benchmark average gate fidelity of $99.942(8)\%$, an improvement on the previous value of $99.90(2)\%$. Furthermore, GST revealed high levels of non-Markovian noise in the system, which will need to be understood and addressed when the qubit is used within a fault-tolerant quantum computation scheme.
△ Less
Submitted 16 June, 2016; v1 submitted 9 June, 2016;
originally announced June 2016.
-
Breaking the rotating wave approximation for a strongly-driven, dressed, single electron spin
Authors:
Arne Laucht,
Stephanie Simmons,
Rachpon Kalra,
Guilherme Tosi,
Juan P. Dehollain,
Juha T. Muhonen,
Solomon Freer,
Fay E. Hudson,
Kohei M. Itoh,
David N. Jamieson,
Jeffrey C. McCallum,
Andrew S. Dzurak,
Andrea Morello
Abstract:
We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field $B_1$ is used to dress the electron spin and create a new quantum system with a level splitting proportional to $B_1$. The dressed two-level system can then be driven by modulating the detuning $Δν$ between the microwave source frequency…
▽ More
We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field $B_1$ is used to dress the electron spin and create a new quantum system with a level splitting proportional to $B_1$. The dressed two-level system can then be driven by modulating the detuning $Δν$ between the microwave source frequency $ν_{\rm MW}$ and the electron spin transition frequency $ν_e$ at the frequency of the level splitting. The resulting dressed qubit Rabi frequency $Ω_{Rρ}$ is defined by the modulation amplitude, which can be made comparable to the level splitting using frequency modulation on the microwave source. This allows us to investigate the regime where the rotating wave approximation breaks down, without requiring microwave power levels that would be incompatible with a cryogenic environment. We observe clear deviations from normal Rabi oscillations and can numerically simulate the time evolution of the states in excellent agreement with the experimental data.
△ Less
Submitted 1 September, 2016; v1 submitted 7 June, 2016;
originally announced June 2016.
-
A Dressed Spin Qubit in Silicon
Authors:
Arne Laucht,
Rachpon Kalra,
Stephanie Simmons,
Juan P. Dehollain,
Juha T. Muhonen,
Fahd A. Mohiyaddin,
Solomon Freer,
Fay E. Hudson,
Kohei M. Itoh,
David N. Jamieson,
Jeffrey C. McCallum,
Andrew S. Dzurak,
A. Morello
Abstract:
Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed sp…
▽ More
Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, by frequency modulating the driving field, or by a simple detuning pulse. We measure coherence times of $T_{2ρ}^*=2.4$ ms and $T_{2ρ}^{\rm Hahn}=9$ ms, one order of magnitude longer than those of the undressed qubit. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.
△ Less
Submitted 15 March, 2016;
originally announced March 2016.
-
Vibration-induced electrical noise in a cryogen-free dilution refrigerator: characterization, mitigation, and impact on qubit coherence
Authors:
Rachpon Kalra,
Arne Laucht,
Juan P. Dehollain,
Daniel Bar,
Solomon Freer,
Stephanie Simmons,
Juha T. Muhonen,
Andrea Morello
Abstract:
Cryogen-free low-temperature setups are becoming more prominent in experimental science due to their convenience and reliability, and concern about the increasing scarcity of helium as a natural resource. Despite not having any moving parts at the cold end, pulse tube cryocoolers introduce vibrations that can be detrimental to the experiments. We characterize the coupling of these vibrations to th…
▽ More
Cryogen-free low-temperature setups are becoming more prominent in experimental science due to their convenience and reliability, and concern about the increasing scarcity of helium as a natural resource. Despite not having any moving parts at the cold end, pulse tube cryocoolers introduce vibrations that can be detrimental to the experiments. We characterize the coupling of these vibrations to the electrical signal observed on cables installed in a cryogen-free dilution refrigerator. The dominant electrical noise is in the 5 to 10 kHz range and its magnitude is found to be strongly temperature dependent. We test the performance of different cables designed to diagnose and tackle the noise, and find triboelectrics to be the dominant mechanism coupling the vibrations to the electrical signal. Flattening a semi-rigid cable or jacketing a flexible cable in order to restrict movement within the cable, successfully reduces the noise level by over an order of magnitude. Furthermore, we characterize the effect of the pulse tube vibrations on an electron spin qubit device in this setup. Coherence measurements are used to map out the spectrum of the noise experienced by the qubit, revealing spectral components matching the spectral signature of the pulse tube.
△ Less
Submitted 7 July, 2016; v1 submitted 9 March, 2016;
originally announced March 2016.
-
Bell's inequality violation with spins in silicon
Authors:
Juan P. Dehollain,
Stephanie Simmons,
Juha T. Muhonen,
Rachpon Kalra,
Arne Laucht,
Fay Hudson,
Kohei M. Itoh,
David N. Jamieson,
Jeffrey C. McCallum,
Andrew S. Dzurak,
Andrea Morello
Abstract:
Bell's theorem sets a boundary between the classical and quantum realms, by providing a strict proof of the existence of entangled quantum states with no classical counterpart. An experimental violation of Bell's inequality demands simultaneously high fidelities in the preparation, manipulation and measurement of multipartite quantum entangled states. For this reason the Bell signal has been tagge…
▽ More
Bell's theorem sets a boundary between the classical and quantum realms, by providing a strict proof of the existence of entangled quantum states with no classical counterpart. An experimental violation of Bell's inequality demands simultaneously high fidelities in the preparation, manipulation and measurement of multipartite quantum entangled states. For this reason the Bell signal has been tagged as a single-number benchmark for the performance of quantum computing devices. Here we demonstrate deterministic, on-demand generation of two-qubit entangled states of the electron and the nuclear spin of a single phosphorus atom embedded in a silicon nanoelectronic device. By sequentially reading the electron and the nucleus, we show that these entangled states violate the Bell/CHSH inequality with a Bell signal of 2.50(10). An even higher value of 2.70(9) is obtained by map** the parity of the two-qubit state onto the nuclear spin, which allows for high-fidelity quantum non-demolition measurement (QND) of the parity. Furthermore, we complement the Bell inequality entanglement witness with full two-qubit state tomography exploiting QND measurement, which reveals that our prepared states match the target maximally entangled Bell states with $>$96\% fidelity. These experiments demonstrate complete control of the two-qubit Hilbert space of a phosphorus atom, and show that this system is able to maintain its simultaneously high initialization, manipulation and measurement fidelities past the single-qubit regime.
△ Less
Submitted 13 April, 2015;
originally announced April 2015.
-
Electrically controlling single spin qubits in a continuous microwave field
Authors:
Arne Laucht,
Juha T. Muhonen,
Fahd A. Mohiyaddin,
Rachpon Kalra,
Juan P. Dehollain,
Solomon Freer,
Fay E. Hudson,
Menno Veldhorst,
Rajib Rahman,
Gerhard Klimeck,
Kohei M. Itoh,
David N. Jamieson,
Jeffrey C. McCallum,
Andrew S. Dzurak,
Andrea Morello
Abstract:
Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electr…
▽ More
Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electric field, which induces a Stark shift of the qubit energies. This method, known as A-gate control, preserves the excellent coherence times and gate fidelities of isolated spins, and can be extended to arbitrarily many qubits without requiring multiple microwave sources.
△ Less
Submitted 19 March, 2015;
originally announced March 2015.
-
A Two Qubit Logic Gate in Silicon
Authors:
M. Veldhorst,
C. H. Yang,
J. C. C. Hwang,
W. Huang,
J. P. Dehollain,
J. T. Muhonen,
S. Simmons,
A. Laucht,
F. E. Hudson,
K. M. Itoh,
A. Morello,
A. S. Dzurak
Abstract:
Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates \cite{DiVincenzo2000, Loss1998}. Strong effort across several fields have led to an impressive array of qubit realizations, including trapped ions \cite{Brown2011}, superconducting circuits \cite{Barends2014}, single photons\cite{Kok200…
▽ More
Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates \cite{DiVincenzo2000, Loss1998}. Strong effort across several fields have led to an impressive array of qubit realizations, including trapped ions \cite{Brown2011}, superconducting circuits \cite{Barends2014}, single photons\cite{Kok2007}, single defects or atoms in diamond \cite{Waldherr2014, Dolde2014} and silicon \cite{Muhonen2014}, and semiconductor quantum dots \cite{Veldhorst2014}, all with single qubit fidelities exceeding the stringent thresholds required for fault-tolerant quantum computing \cite{Fowler2012}. Despite this, high-fidelity two-qubit gates in the solid-state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits \cite{Barends2014}, as semiconductor systems have suffered from difficulties in coupling qubits and dephasing \cite{Nowack2011, Brunner2011, Shulman2012}. Here, we show that these issues can be eliminated altogether using single spins in isotopically enriched silicon\cite{Itoh2014} by demonstrating single- and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the original Loss-DiVincenzo proposal \cite{Loss1998}. We realize CNOT gates via either controlled rotation (CROT) or controlled phase (CZ) operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is employed in the two-qubit CZ gate. The speed of the two-qubit CZ operations is controlled electrically via the detuning energy and we find that over 100 two-qubit gates can be performed within a two-qubit coherence time of 8 \textmu s, thereby satisfying the criteria required for scalable quantum computation.
△ Less
Submitted 20 November, 2014;
originally announced November 2014.
-
Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking
Authors:
J. T. Muhonen,
A. Laucht,
S. Simmons,
J. P. Dehollain,
R. Kalra,
F. E. Hudson,
S. Freer,
K. M. Itoh,
D. N. Jamieson,
J. C. McCallum,
A. S. Dzurak,
A. Morello
Abstract:
Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically p…
▽ More
Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically purified 28-Si. We find average gate fidelities of 99.95 % for the electron, and 99.99 % for the nuclear spin. These values are above certain error correction thresholds, and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware, and not the intrinsic behaviour of the qubit.
△ Less
Submitted 8 October, 2014;
originally announced October 2014.
-
An addressable quantum dot qubit with fault-tolerant control fidelity
Authors:
M. Veldhorst,
J. C. C. Hwang,
C. H. Yang,
A. W. Leenstra,
B. de Ronde,
J. P. Dehollain,
J. T. Muhonen,
F. E. Hudson,
K. M. Itoh,
A. Morello,
A. S. Dzurak
Abstract:
Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges…
▽ More
Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges in coupling such qubits and addressing them individually. Conversely, lithographically defined quantum dots have an exchange coupling that can be precisely engineered, but strong coupling to noise has severely limited their dephasing times and control fidelities. Here we combine the best aspects of both spin qubit schemes and demonstrate a gate-addressable quantum dot qubit in isotopically engineered silicon with a control fidelity of 99.6%, obtained via Clifford based randomized benchmarking and consistent with that required for fault-tolerant quantum computing. This qubit has orders of magnitude improved coherence times compared with other quantum dot qubits, with T_2* = 120 mus and T_2 = 28 ms. By gate-voltage tuning of the electron g*-factor, we can Stark shift the electron spin resonance (ESR) frequency by more than 3000 times the 2.4 kHz ESR linewidth, providing a direct path to large-scale arrays of addressable high-fidelity qubits that are compatible with existing manufacturing technologies.
△ Less
Submitted 8 July, 2014;
originally announced July 2014.
-
Superconducting platinum silicide for electron cooling in silicon
Authors:
M J Prest,
J S Richardson-Bullock,
Q T Zhao,
J T Muhonen,
D Gunnarsson,
M Prunnila,
V A Shah,
T E Whall,
E H C Parker,
D R Leadley
Abstract:
We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures and enables electron cooling to be demonstrated from 100 mK to 50 mK.
We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures and enables electron cooling to be demonstrated from 100 mK to 50 mK.
△ Less
Submitted 16 May, 2014;
originally announced May 2014.
-
Single-shot readout and relaxation of singlet/triplet states in exchange-coupled $^{31}$P electron spins in silicon
Authors:
Juan P. Dehollain,
Juha T. Muhonen,
Kuan Y. Tan,
André Saraiva,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
We present the experimental observation of a large exchange coupling $J \approx 300$ $μ$eV between two $^{31}$P electron spin qubits in silicon. The singlet and triplet states of the coupled spins are monitored in real time by a Single-Electron Transistor, which detects ionization from tunnel-rate-dependent processes in the coupled spin system, yielding single-shot readout fidelities above 95%. Th…
▽ More
We present the experimental observation of a large exchange coupling $J \approx 300$ $μ$eV between two $^{31}$P electron spin qubits in silicon. The singlet and triplet states of the coupled spins are monitored in real time by a Single-Electron Transistor, which detects ionization from tunnel-rate-dependent processes in the coupled spin system, yielding single-shot readout fidelities above 95%. The triplet to singlet relaxation time $T_1 \approx 4$ ms at zero magnetic field agrees with the theoretical prediction for $J$-coupled $^{31}$P dimers in silicon. The time evolution of the 2-electron state populations gives further insight into the valley-orbit eigenstates of the donor dimer, valley selection rules and relaxation rates, and the role of hyperfine interactions. These results pave the way to the realization of 2-qubit quantum logic gates with spins in silicon, and highlight the necessity to adopt gating schemes compatible with weak $J$-coupling strengths.
△ Less
Submitted 11 June, 2014; v1 submitted 28 February, 2014;
originally announced February 2014.
-
Storing quantum information for 30 seconds in a nanoelectronic device
Authors:
Juha T. Muhonen,
Juan P. Dehollain,
Arne Laucht,
Fay E. Hudson,
Takeharu Sekiguchi,
Kohei M. Itoh,
David N. Jamieson,
Jeffrey C. McCallum,
Andrew S. Dzurak,
Andrea Morello
Abstract:
The spin of an electron or a nucleus in a semiconductor [1] naturally implements the unit of quantum information -- the qubit -- while providing a technological link to the established electronics industry [2]. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms [3], or charge and spin fluctuators in defects, oxide…
▽ More
The spin of an electron or a nucleus in a semiconductor [1] naturally implements the unit of quantum information -- the qubit -- while providing a technological link to the established electronics industry [2]. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms [3], or charge and spin fluctuators in defects, oxides and interfaces [4]. For group IV materials such as silicon, enrichment of the spin-zero 28-Si isotope drastically reduces spin-bath decoherence [5]. Experiments on bulk spin ensembles in 28-Si crystals have indeed demonstrated extraordinary coherence times [6-8]. However, it remained unclear whether these would persist at the single-spin level, in gated nanostructures near amorphous interfaces. Here we present the coherent operation of individual 31-P electron and nuclear spin qubits in a top-gated nanostructure, fabricated on an isotopically engineered 28-Si substrate. We report new benchmarks for coherence time (> 30 seconds) and control fidelity (> 99.99%) of any single qubit in solid state, and perform a detailed noise spectroscopy [9] to demonstrate that -- contrary to widespread belief -- the coherence is not limited by the proximity to an interface. Our results represent a fundamental advance in control and understanding of spin qubits in nanostructures.
△ Less
Submitted 28 February, 2014;
originally announced February 2014.
-
High-fidelity adiabatic inversion of a $^{31}\mathrm{P}$ electron spin qubit in natural silicon
Authors:
Arne Laucht,
Rachpon Kalra,
Juha T. Muhonen,
Juan P. Dehollain,
Fahd A. Mohiyaddin,
Fay Hudson,
Jeffrey C. McCallum,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
The main limitation to the high-fidelity quantum control of spins in semiconductors is the presence of strongly fluctuating fields arising from the nuclear spin bath of the host material. We demonstrate here a substantial improvement in single-qubit gate fidelities for an electron spin qubit bound to a $^{31}$P atom in natural silicon, by applying adiabatic inversion instead of narrow-band pulses.…
▽ More
The main limitation to the high-fidelity quantum control of spins in semiconductors is the presence of strongly fluctuating fields arising from the nuclear spin bath of the host material. We demonstrate here a substantial improvement in single-qubit gate fidelities for an electron spin qubit bound to a $^{31}$P atom in natural silicon, by applying adiabatic inversion instead of narrow-band pulses. We achieve an inversion fidelity of 97%, and we observe signatures in the spin resonance spectra and the spin coherence time that are consistent with the presence of an additional exchange-coupled donor. This work highlights the effectiveness of adiabatic inversion techniques for spin control in fluctuating environments.
△ Less
Submitted 17 December, 2013;
originally announced December 2013.
-
Single quasiparticle excitation dynamics on a superconducting island
Authors:
V. F. Maisi,
S. V. Lotkhov,
A. Kemppinen,
A. Heimes,
J. T. Muhonen,
J. P. Pekola
Abstract:
We investigate single quasiparticle excitation dynamics on a small superconducting aluminum island connected to normal metallic leads by tunnel junctions. We find the island to be free of excitations within the measurement resolution allowing us to determine Cooper pair breaking rate to be less than 3 kHz. By tuning the Coulomb energy of the island to have an odd number of electrons, one of them r…
▽ More
We investigate single quasiparticle excitation dynamics on a small superconducting aluminum island connected to normal metallic leads by tunnel junctions. We find the island to be free of excitations within the measurement resolution allowing us to determine Cooper pair breaking rate to be less than 3 kHz. By tuning the Coulomb energy of the island to have an odd number of electrons, one of them remains unpaired. We detect it by measuring its relaxation rate via tunneling. By injecting electrons with a periodic gate voltage, we probe electron-phonon interaction and relaxation down to a single quasiparticle excitation pair, with a measured recombination rate of 8 kHz. Our experiment yields a strong test of BCS-theory in aluminum as the results are consistent with it without free parameters.
△ Less
Submitted 22 January, 2013; v1 submitted 12 December, 2012;
originally announced December 2012.
-
Micrometre-scale refrigerators
Authors:
Juha T. Muhonen,
Matthias Meschke,
Jukka P. Pekola
Abstract:
A superconductor with a gap in the density of states or a quantum dot with discrete energy levels is a central building block in realizing an electronic on-chip cooler. They can work as energy filters, allowing only hot quasiparticles to tunnel out from the electrode to be cooled. This principle has been employed experimentally since the early 1990s in investigations and demonstrations of micromet…
▽ More
A superconductor with a gap in the density of states or a quantum dot with discrete energy levels is a central building block in realizing an electronic on-chip cooler. They can work as energy filters, allowing only hot quasiparticles to tunnel out from the electrode to be cooled. This principle has been employed experimentally since the early 1990s in investigations and demonstrations of micrometre-scale coolers at sub-kelvin temperatures. In this paper, we review the basic experimental conditions in realizing the coolers and the main practical issues that are known to limit their performance. We give an update of experiments performed on cryogenic micrometre-scale coolers in the past five years.
△ Less
Submitted 21 March, 2012;
originally announced March 2012.
-
Strain enhanced electron cooling in a degenerately doped semiconductor
Authors:
M. J. Prest,
J. T. Muhonen,
M. Prunnila,
D. Gunnarsson,
V. A. Shah,
J. S. Richardson-Bullock,
A. Dobbie,
M. Myronov,
R. J. H. Morris,
T. E. Whall,
E. H. C. Parker,
D. R. Leadley
Abstract:
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cool…
▽ More
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.
△ Less
Submitted 18 November, 2011; v1 submitted 2 November, 2011;
originally announced November 2011.
-
Magnetic-Field-Induced Stabilization of Non-Equilibrium Superconductivity
Authors:
J. T. Peltonen,
J. T. Muhonen,
M. Meschke,
N. B. Kopnin,
J. P. Pekola
Abstract:
A small magnetic field is found to enhance relaxation processes in a superconductor thus stabilizing superconductivity in non-equilibrium conditions. In a normal-metal (N) - insulator - superconductor (S) tunnel junction, applying a field of the order of 100 μT leads to significantly improved cooling of the N island by quasiparticle (QP) tunneling. These findings are attributed to faster QP relaxa…
▽ More
A small magnetic field is found to enhance relaxation processes in a superconductor thus stabilizing superconductivity in non-equilibrium conditions. In a normal-metal (N) - insulator - superconductor (S) tunnel junction, applying a field of the order of 100 μT leads to significantly improved cooling of the N island by quasiparticle (QP) tunneling. These findings are attributed to faster QP relaxation within the S electrodes as a result of enhanced QP drain through regions with locally suppressed energy gap due to magnetic vortices in the S leads at some distance from the junction.
△ Less
Submitted 7 August, 2011;
originally announced August 2011.
-
Strain control of electron-phonon energy loss rate in many-valley semiconductors
Authors:
J. T. Muhonen,
M. J. Prest,
M. Prunnila,
D. Gunnarsson,
V. A. Shah,
A. Dobbie,
M. Myronov,
R. J. H. Morris,
T. E. Whall,
E. H. C. Parker,
D. R. Leadley
Abstract:
We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample.
We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample.
△ Less
Submitted 31 January, 2011;
originally announced January 2011.
-
Electronic cooling of a submicron-sized metallic beam
Authors:
J. T. Muhonen,
A. O. Niskanen,
M. Meschke,
Yu. A. Pashkin,
J. S. Tsai,
L. Sainiemi,
S. Franssila,
J. P. Pekola
Abstract:
We demonstrate electronic cooling of a suspended AuPd island using superconductor-insulator-normal metal tunnel junctions. This was achieved by develo** a simple fabrication method for reliably releasing narrow submicron sized metal beams. The process is based on reactive ion etching and uses a conducting substrate to avoid charge-up damage and is compatible with e.g. conventional e-beam litho…
▽ More
We demonstrate electronic cooling of a suspended AuPd island using superconductor-insulator-normal metal tunnel junctions. This was achieved by develo** a simple fabrication method for reliably releasing narrow submicron sized metal beams. The process is based on reactive ion etching and uses a conducting substrate to avoid charge-up damage and is compatible with e.g. conventional e-beam lithography, shadow-angle metal deposition and oxide tunnel junctions. The devices function well and exhibit clear cooling; up to factor of two at sub-kelvin temperatures.
△ Less
Submitted 26 September, 2008; v1 submitted 2 July, 2008;
originally announced July 2008.
