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ATHENA Detector Proposal -- A Totally Hermetic Electron Nucleus Apparatus proposed for IP6 at the Electron-Ion Collider
Authors:
ATHENA Collaboration,
J. Adam,
L. Adamczyk,
N. Agrawal,
C. Aidala,
W. Akers,
M. Alekseev,
M. M. Allen,
F. Ameli,
A. Angerami,
P. Antonioli,
N. J. Apadula,
A. Aprahamian,
W. Armstrong,
M. Arratia,
J. R. Arrington,
A. Asaturyan,
E. C. Aschenauer,
K. Augsten,
S. Aune,
K. Bailey,
C. Baldanza,
M. Bansal,
F. Barbosa,
L. Barion
, et al. (415 additional authors not shown)
Abstract:
ATHENA has been designed as a general purpose detector capable of delivering the full scientific scope of the Electron-Ion Collider. Careful technology choices provide fine tracking and momentum resolution, high performance electromagnetic and hadronic calorimetry, hadron identification over a wide kinematic range, and near-complete hermeticity. This article describes the detector design and its e…
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ATHENA has been designed as a general purpose detector capable of delivering the full scientific scope of the Electron-Ion Collider. Careful technology choices provide fine tracking and momentum resolution, high performance electromagnetic and hadronic calorimetry, hadron identification over a wide kinematic range, and near-complete hermeticity. This article describes the detector design and its expected performance in the most relevant physics channels. It includes an evaluation of detector technology choices, the technical challenges to realizing the detector and the R&D required to meet those challenges.
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Submitted 13 October, 2022;
originally announced October 2022.
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Characterization of passive CMOS sensors with RD53A pixel modules
Authors:
Franz Glessgen,
Malte Backhaus,
Florencia Canelli,
Yannick Manuel Dieter,
Jochen Christian Dingfelder,
Tomasz Hemperek,
Fabian Huegging,
Arash Jofrehei,
Weijie **,
Ben Kilminster,
Anna Macchiolo,
Daniel Muenstermann,
David-Leon Pohl,
Branislav Ristic,
Rainer Wallny,
Tianyang Wang,
Norbert Wermes,
Pascal Wolf
Abstract:
Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to fabricate silicon radiation detectors, both for pixels and for large-area strip sensors. A successful proof of concept would open the market potential of CMOS fou…
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Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to fabricate silicon radiation detectors, both for pixels and for large-area strip sensors. A successful proof of concept would open the market potential of CMOS foundries to the HEP community, which would be most beneficial in terms of availability, throughput and cost. In addition, the availability of multi-layer routing of signals will provide the freedom to optimize the sensor geometry and the performance, with biasing structures implemented in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototy** production of strip test structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150nm CMOS process. This presentation will focus on the characterization of pixel modules, studying the performance in terms of charge collection, position resolution and hit efficiency with measurements performed in the laboratory and with beam tests. We will report on the investigation of RD53A modules with 25x100 mu^2 cell geometry.
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Submitted 15 November, 2021;
originally announced November 2021.
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Production and validation of scintillating structural components from low-background Poly(ethylene naphthalate)
Authors:
Y. Efremenko,
M. Febbraro,
F. Fischer,
M. Guitart Corominas,
K. Gusev,
B. Hackett,
C. Hayward,
R. Hodák,
P. Krause,
B. Majorovits,
L. Manzanillas,
D. Muenstermann,
M. Pohl,
R. Rouhana,
D. Radford,
E. Rukhadze,
N. Rumyantseva,
I. Schilling,
S. Schoenert,
O. Schulz,
M. Schwarz,
I. Štekl,
M. Stommel,
J. Weingarten,
E. Hoppe
, et al. (6 additional authors not shown)
Abstract:
Poly Ethylene Naphthalate (PEN) is an industrial polymer plastic which is investigated as a low background, transparent, scintillating and wavelength shifting structural material. PEN scintillates in the blue region and has excellent mechanical properties both at room and cryogenic temperatures. Thus, it is an ideal candidate for active structural components in experiments for the search of rare e…
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Poly Ethylene Naphthalate (PEN) is an industrial polymer plastic which is investigated as a low background, transparent, scintillating and wavelength shifting structural material. PEN scintillates in the blue region and has excellent mechanical properties both at room and cryogenic temperatures. Thus, it is an ideal candidate for active structural components in experiments for the search of rare events like neutrinoless double-beta decay or dark matter recoils. Such optically active structures improve the identification and rejection efficiency of background events, like this improving the sensitivity of experiments. This paper reports on the production of radiopure and transparent PEN plates These structures can be used to mount germanium detectors operating in cryogenic liquids (LAr, LN). Thus, as first application PEN holders will be used to mount the Ge detectors in the LEGEND-200 experiment. The whole process from cleaning the raw material to testing the PEN active components under final operational conditions is reported.
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Submitted 21 November, 2022; v1 submitted 25 October, 2021;
originally announced October 2021.
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LEGEND-1000 Preconceptual Design Report
Authors:
LEGEND Collaboration,
N. Abgrall,
I. Abt,
M. Agostini,
A. Alexander,
C. Andreoiu,
G. R. Araujo,
F. T. Avignone III,
W. Bae,
A. Bakalyarov,
M. Balata,
M. Bantel,
I. Barabanov,
A. S. Barabash,
P. S. Barbeau,
C. J. Barton,
P. J. Barton,
L. Baudis,
C. Bauer,
E. Bernieri,
L. Bezrukov,
K. H. Bhimani,
V. Biancacci,
E. Blalock,
A. Bolozdynya
, et al. (239 additional authors not shown)
Abstract:
We propose the construction of LEGEND-1000, the ton-scale Large Enriched Germanium Experiment for Neutrinoless $ββ$ Decay. This international experiment is designed to answer one of the highest priority questions in fundamental physics. It consists of 1000 kg of Ge detectors enriched to more than 90% in the $^{76}$Ge isotope operated in a liquid argon active shield at a deep underground laboratory…
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We propose the construction of LEGEND-1000, the ton-scale Large Enriched Germanium Experiment for Neutrinoless $ββ$ Decay. This international experiment is designed to answer one of the highest priority questions in fundamental physics. It consists of 1000 kg of Ge detectors enriched to more than 90% in the $^{76}$Ge isotope operated in a liquid argon active shield at a deep underground laboratory. By combining the lowest background levels with the best energy resolution in the field, LEGEND-1000 will perform a quasi-background-free search and can make an unambiguous discovery of neutrinoless double-beta decay with just a handful of counts at the decay $Q$ value. The experiment is designed to probe this decay with a 99.7%-CL discovery sensitivity in the $^{76}$Ge half-life of $1.3\times10^{28}$ years, corresponding to an effective Majorana mass upper limit in the range of 9-21 meV, to cover the inverted-ordering neutrino mass scale with 10 yr of live time.
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Submitted 23 July, 2021;
originally announced July 2021.
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Towards GaAs Thin-Film Tracking Detectors
Authors:
Victor Rangel-Kuoppa,
Sheng Ye,
Yasir J Noori,
William Holmkvist,
Robert J Young,
Daniel Muenstermann
Abstract:
Silicon-based tracking detectors have been used in several important applications, such as in cancer therapy using particle beams, and for the discovery of new elementary particles at the Large Hadron Collider at CERN. III-V semiconductor materials are an attractive alternative to silicon for this application, as they have some superior physical properties. They could meet the demands for fast tim…
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Silicon-based tracking detectors have been used in several important applications, such as in cancer therapy using particle beams, and for the discovery of new elementary particles at the Large Hadron Collider at CERN. III-V semiconductor materials are an attractive alternative to silicon for this application, as they have some superior physical properties. They could meet the demands for fast timing detectors allowing time-of-flight measurements with ps resolution while being radiation tolerant and cost-efficient. As a material with a larger density, higher atomic number Z and much higher electron mobility than silicon, GaAs exhibits faster signal collection and a larger signal per μm of sensor thickness. In this work, we report on the fabrication of n-in-n GaAs thin-film devices intended to serve next-generation high-energy particle tracking detectors. Molecular beam epitaxy (MBE) was used to grow high-quality GaAs films with do** levels sufficiently low to achieve full depletion for detectors with an active thickness of 10 μm. The signal collection speed of the detector structures was assessed using the transient current technique (TCT). To elucidate the structural properties of the detector, Kelvin probe force microscopy (KPFM) was used, which confirmed the formation of the junction in the detector and revealed residual do** in the intrinsic layer. Our results suggest that GaAs thin films are suitable candidates to achieve thin and radiation-tolerant tracking detectors.
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Submitted 13 July, 2021; v1 submitted 12 July, 2021;
originally announced July 2021.
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Development of very-thick transparent GEMs with wavelength-shifting capability for noble element TPCs
Authors:
M. Kuźniak,
D. González-Díaz,
P. Amedo,
C. D. R. Azevedo,
D. J. Fernández-Posada,
M. Kuźwa,
S. Leardini,
A. Leonhardt,
T. Łęcki,
L. Manzanillas,
D. Muenstermann,
G. Nieradka,
R. de Oliveira,
T. R. Pollmann,
A. Saá Hernández,
T. Sworobowicz,
C. Türkoğlu,
S. Williams
Abstract:
A new concept for the simultaneous detection of primary and secondary scintillation in time projection chambers is proposed. Its core element is a type of very-thick GEM structure supplied with transparent electrodes and machined from a polyethylene naphthalate plate, a natural wavelength-shifter. Such a device has good prospects for scalability and, by virtue of its genuine optical properties, it…
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A new concept for the simultaneous detection of primary and secondary scintillation in time projection chambers is proposed. Its core element is a type of very-thick GEM structure supplied with transparent electrodes and machined from a polyethylene naphthalate plate, a natural wavelength-shifter. Such a device has good prospects for scalability and, by virtue of its genuine optical properties, it can improve on the light collection efficiency, energy threshold and resolution of conventional micropattern gas detectors. This, together with the intrinsic radiopurity of its constituting elements, offers advantages for noble gas and liquid based time projection chambers, used for dark matter searches and neutrino experiments. Production, optical and electrical characterization, and first measurements performed with the new device are reported.
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Submitted 15 March, 2022; v1 submitted 7 June, 2021;
originally announced June 2021.
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Usage of PEN as self-vetoing structural material in low background experiments
Authors:
I. Abt,
Y. Efremenko,
M. Febbraro,
F. Fischer,
M. Guitart,
K. Gusev,
B. Hackett,
C. Hayward,
R. Hodak,
P. Krause,
B. Majorovits,
L. Manzanillas,
D. Muenstermann,
R. Pjatkan,
M. Pohl,
R. Rouhana,
D. Radford,
E. Rukhadze,
N. Rumyantseva,
I. Schilling,
S. Schoenert,
O. Schulz,
M. Schwarz,
M. Stommel,
J. Weingarten
Abstract:
PEN is an industrial polyester plastic which has become interesting for the physics community as a new type of plastic scintillator. PEN scintillates in the blue regime, which is ideal for most photosensor devices. In addition, PEN has excellent mechanical properties and very good radiopurity has been achieved. Thus, it is an ideal candidate for active structural components in low-background exper…
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PEN is an industrial polyester plastic which has become interesting for the physics community as a new type of plastic scintillator. PEN scintillates in the blue regime, which is ideal for most photosensor devices. In addition, PEN has excellent mechanical properties and very good radiopurity has been achieved. Thus, it is an ideal candidate for active structural components in low-background experiments. One possible application are holders for germanium detectors operating in cryogenic liquids (LAr, LN2). Such structures can help to reject surface and external backgrounds, boosting the sensitivity of experiments. In this contribution, the R\&D on PEN is outlined and an evaluation of the first production of PEN structures for the LEGEND-200 experiment is reported.
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Submitted 9 December, 2020; v1 submitted 16 November, 2020;
originally announced November 2020.
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Use of polyethylene naphthalate as a self-vetoing structural material
Authors:
Y. Efremenko,
L. Fajt,
M. Febbraro,
F. Fischer,
C. Hayward,
R. Hodák,
T. Kraetzschmar,
B. Majorovits,
D. Muenstermann,
E. Öz,
R. Pjatkan,
M. Pohl,
D. Radford,
R. Rouhana,
E. Sala,
O. Schulz,
I. Štekl,
M. Stommel
Abstract:
The discovery of scintillation in the blue regime from polyethylene naphthalate (PEN), a commonly used high-performance industrial polyester plastic, has sparked considerable interest from the physics community as a new type of plastic scintillator material. This observation in addition to its good mechanical and radiopurity properties makes PEN an attractive candidate as an active structure scint…
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The discovery of scintillation in the blue regime from polyethylene naphthalate (PEN), a commonly used high-performance industrial polyester plastic, has sparked considerable interest from the physics community as a new type of plastic scintillator material. This observation in addition to its good mechanical and radiopurity properties makes PEN an attractive candidate as an active structure scintillator for low-background physics experiments. This paper reports on investigations of its potential in terms of production tests of custom made tiles and various scintillation light output measurements. These investigations substantiate the high potential of usage of PEN in low-background experiments.
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Submitted 11 June, 2019; v1 submitted 11 January, 2019;
originally announced January 2019.
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Production and Integration of the ATLAS Insertable B-Layer
Authors:
B. Abbott,
J. Albert,
F. Alberti,
M. Alex,
G. Alimonti,
S. Alkire,
P. Allport,
S. Altenheiner,
L. Ancu,
E. Anderssen,
A. Andreani,
A. Andreazza,
B. Axen,
J. Arguin,
M. Backhaus,
G. Balbi,
J. Ballansat,
M. Barbero,
G. Barbier,
A. Bassalat,
R. Bates,
P. Baudin,
M. Battaglia,
T. Beau,
R. Beccherle
, et al. (352 additional authors not shown)
Abstract:
During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and i…
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During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector.
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Submitted 6 June, 2018; v1 submitted 2 March, 2018;
originally announced March 2018.
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Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate
Authors:
M. Benoit,
S. Braccini,
R. Casanova,
E. Cavallaro,
H. Chen,
K. Chen,
F. A. Di Bello,
D. Ferrere,
D. Frizzell,
T. Golling,
S. Gonzalez-Sevilla,
S. Grinstein,
G. Iacobucci,
M. Kiehn,
F. Lanni,
H. Liu,
J. Metcalfe,
L. Meng,
C. Merlassino,
A. Miucci,
D. Muenstermann,
M. Nessi,
H. Okawa,
I. Perić,
M. Rimoldi
, et al. (12 additional authors not shown)
Abstract:
In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning fr…
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In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from $\mathrm{80}$ to $\mathrm{1000~Ω\cdot cm}$. A glueing process using a high-precision flip-chip machine was developed in order to capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer of epoxy glue with good uniformity over a large surface. The resulting assemblies were measured in beam test at the Fermilab Test Beam Facilities with 120 GeV protons and CERN SPS H8 beamline using 80 GeV pions. The in-time efficiency and tracking properties measured for the different sensor types are shown to be compatible with the ATLAS ITk requirements for its pixel sensors.
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Submitted 3 December, 2018; v1 submitted 22 December, 2017;
originally announced December 2017.
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PEN as self-vetoing structural Material
Authors:
B. Majorovits,
S. Eck,
F. Fischer,
C. Gooch,
C. Hayward,
T. Kraetzschmar,
N. van der Kolk,
D. Muenstermann,
O. Schulz,
F. Simon
Abstract:
Polyethylene Naphtalate (PEN) is a mechanically very favorable polymer. Earlier it was found that thin foils made from PEN can have very high radio-purity compared to other commercially available foils. In fact, PEN is already in use for low background signal transmission applications (cables). Recently it has been realized that PEN also has favorable scintillating properties. In combination, this…
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Polyethylene Naphtalate (PEN) is a mechanically very favorable polymer. Earlier it was found that thin foils made from PEN can have very high radio-purity compared to other commercially available foils. In fact, PEN is already in use for low background signal transmission applications (cables). Recently it has been realized that PEN also has favorable scintillating properties. In combination, this makes PEN a very promising candidate as a self-vetoing structural material in low background experiments. Components instrumented with light detectors could be built from PEN. This includes detector holders, detector containments, signal transmission links, etc. The current R\&D towards qualification of PEN as a self-vetoing low background structural material is be presented.
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Submitted 30 August, 2017;
originally announced August 2017.
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Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes
Authors:
M. Benoit,
S. Braccini,
G. Casse,
H. Chen,
K. Chen,
F. A. Di Bello,
D. Ferrere,
T. Golling,
S. Gonzalez-Sevilla,
G. Iacobucci,
M. Kiehn,
F. Lanni,
H. Liu,
L. Meng,
C. Merlassino,
A. Miucci,
D. Muenstermann,
M. Nessi,
H. Okawa,
I. Peric,
M. Rimoldi,
B. Ristic,
M. Vicente Barrero Pinto,
J. Vossebeld,
M. Weber
, et al. (4 additional authors not shown)
Abstract:
HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{\mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the am…
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HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{\mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between $1\cdot 10^{14}$ and $5\cdot 10^{15}$ 1-MeV-n$_\textrm{eq}$/cm$^2$. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of $85\,$V. The sample irradiated to a fluence of $1\cdot 10^{15}$ n$_\textrm{eq}$/cm$^2$ - a relevant value for a large volume of the upgraded tracker - exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.
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Submitted 28 November, 2017; v1 submitted 8 November, 2016;
originally announced November 2016.
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Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype
Authors:
M. Benoit,
J. Bilbao de Mendizabal,
G. Casse,
H. Chen,
K. Chen,
F. A. Di Bello,
D. Ferrere,
T. Golling,
S. Gonzalez-Sevilla,
G. Iacobucci,
F. Lanni,
H. Liu,
F. Meloni,
L. Meng,
A. Miucci,
D. Muenstermann,
M. Nessi,
I. Peric,
M. Rimoldi,
B. Ristic,
M. Vicente Barrero Pinto,
J. Vossebeld,
M. Weber,
W. Wu,
L. Xu
Abstract:
Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of track…
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Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.
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Submitted 30 June, 2016; v1 submitted 24 March, 2016;
originally announced March 2016.
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The FE-I4 Telescope for particle tracking in testbeam experiments
Authors:
M. Benoit,
J. Bilbao De Mendizabal,
F. A. Di Bello,
D. Ferrere,
T. Golling,
S. Gonzalez-Sevilla,
G. Iacobucci,
M. Kocian,
D. Muenstermann,
B. Ristic,
A. Sciuccati
Abstract:
A testbeam telescope, based on ATLAS IBL silicon pixel modules, has been built. It comprises six planes of planar silicon sensors with 250 x 50 um^2 pitch, read out by ATLAS FE-I4 chips. In the CERN SPS H8 beamline (180 GeV pi+) a resolution of better than 8 x 12 um^2 at the position of the device under test was achieved. The telescope reached a trigger rate of 6kHz with two measured devices. It i…
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A testbeam telescope, based on ATLAS IBL silicon pixel modules, has been built. It comprises six planes of planar silicon sensors with 250 x 50 um^2 pitch, read out by ATLAS FE-I4 chips. In the CERN SPS H8 beamline (180 GeV pi+) a resolution of better than 8 x 12 um^2 at the position of the device under test was achieved. The telescope reached a trigger rate of 6kHz with two measured devices. It is mainly designed for studies using FE-I4 based prototypes, but has also been successfully run with independent DAQ systems. Specialised trigger schemes ensure data synchronisation between these external devices and the telescope. A region-of-interest trigger can be formed by setting masks on the first and the last pixel sensor planes. The setup infrastructure provides centrally controlled and monitored high and low voltage power supplies, silicon oil cooling, temperature and humidity sensors and movable stages.
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Submitted 20 June, 2016; v1 submitted 24 March, 2016;
originally announced March 2016.
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Planar Pixel Sensors for the ATLAS Upgrade: Beam Tests results
Authors:
J. Weingarten,
S. Altenheiner,
M. Beimforde,
M. Benoit,
M. Bomben,
G. Calderini,
C. Gallrapp,
M. George,
S. Gibson,
S. Grinstein,
Z. Janoska,
J. Jentzsch,
O. **nouchi,
T. Kishida,
A. La Rosa,
V. Libov,
A. Macchiolo,
G. Marchiori,
D. Münstermann,
R. Nagai,
G. Piacquadio,
B. Ristic,
I. Rubinskiy,
A. Rummler,
Y. Takubo
, et al. (6 additional authors not shown)
Abstract:
Results of beam tests with planar silicon pixel sensors aimed towards the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include spatial resolution, charge collection performance and charge sharing between neighbouring cells as a function of track incidence angle for different bulk materials. Measurements of n-in-n pixel sensors are presented as a fu…
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Results of beam tests with planar silicon pixel sensors aimed towards the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include spatial resolution, charge collection performance and charge sharing between neighbouring cells as a function of track incidence angle for different bulk materials. Measurements of n-in-n pixel sensors are presented as a function of fluence for different irradiations. Furthermore p-type silicon sensors from several vendors with slightly differing layouts were tested. All tested sensors were connected by bump-bonding to the ATLAS Pixel read-out chip. We show that both n-type and p-type tested planar sensors are able to collect significant charge even after integrated fluences expected at HL-LHC.
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Submitted 9 November, 2012; v1 submitted 5 April, 2012;
originally announced April 2012.
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Experimental study of double beta decay modes using a CdZnTe detector array
Authors:
J. V. Dawson,
C. Goessling,
B. Janutta,
M. Junker,
T. Koettig,
D. Muenstermann,
S. Rajek,
C. Reeve,
O. Schulz,
J. R. Wilson,
K. Zuber
Abstract:
An array of sixteen 1 cm^3 CdZnTe semiconductor detectors was operated at the Gran Sasso Underground Laboratory (LNGS) to further investigate the feasibility of double-beta decay searches with such devices. As one of the double-beta decay experiments with the highest granularity the 4 x 4 array accumulated an overall exposure of 18 kg days. The setup and performance of the array is described. Ha…
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An array of sixteen 1 cm^3 CdZnTe semiconductor detectors was operated at the Gran Sasso Underground Laboratory (LNGS) to further investigate the feasibility of double-beta decay searches with such devices. As one of the double-beta decay experiments with the highest granularity the 4 x 4 array accumulated an overall exposure of 18 kg days. The setup and performance of the array is described. Half-life limits for various double-beta decay modes of Cd, Zn and Te isotopes are obtained. No signal has been found, but several limits beyond 10^20 years have been performed. They are an order of magnitude better than those obtained with this technology before and comparable to most other experimental approaches for the isotopes under investigation. An improved limit for the beta^+/EC decay of Te 120 is given.
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Submitted 25 September, 2009; v1 submitted 20 February, 2009;
originally announced February 2009.
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An Investigation into the 113-Cd Beta Decay Spectrum using a CdZnTe Array
Authors:
J. V. Dawson,
C. Reeve,
J. R. Wilson,
K. Zuber,
M. Junker,
C. Gössling,
T. Köttig,
D. Münstermann,
S. Rajek,
O. Schulz
Abstract:
We present 11 independent measurements of the half-life and spectral shape of the 4-fold forbidden beta decay of 113-Cd using CdZnTe semiconductors with a total combined lifetime of 6.58 kg days. Our overall result gives a half-life of (8.00 +/- 0.11(stat) +/- 0.24(sys)) x 10^15 years and a Q value of 322.2 +/- 0.3(stat) +/- 0.9(sys) keV. For the first time half-lives well beyond 10^10 years hav…
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We present 11 independent measurements of the half-life and spectral shape of the 4-fold forbidden beta decay of 113-Cd using CdZnTe semiconductors with a total combined lifetime of 6.58 kg days. Our overall result gives a half-life of (8.00 +/- 0.11(stat) +/- 0.24(sys)) x 10^15 years and a Q value of 322.2 +/- 0.3(stat) +/- 0.9(sys) keV. For the first time half-lives well beyond 10^10 years have been deduced with a statistically representative sample of independent measurements.
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Submitted 8 January, 2009;
originally announced January 2009.
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Expected Performance of the ATLAS Experiment - Detector, Trigger and Physics
Authors:
The ATLAS Collaboration,
G. Aad,
E. Abat,
B. Abbott,
J. Abdallah,
A. A. Abdelalim,
A. Abdesselam,
O. Abdinov,
B. Abi,
M. Abolins,
H. Abramowicz,
B. S. Acharya,
D. L. Adams,
T. N. Addy,
C. Adorisio,
P. Adragna,
T. Adye,
J. A. Aguilar-Saavedra,
M. Aharrouche,
S. P. Ahlen,
F. Ahles,
A. Ahmad,
H. Ahmed,
G. Aielli,
T. Akdogan
, et al. (2587 additional authors not shown)
Abstract:
A detailed study is presented of the expected performance of the ATLAS detector. The reconstruction of tracks, leptons, photons, missing energy and jets is investigated, together with the performance of b-tagging and the trigger. The physics potential for a variety of interesting physics processes, within the Standard Model and beyond, is examined. The study comprises a series of notes based on…
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A detailed study is presented of the expected performance of the ATLAS detector. The reconstruction of tracks, leptons, photons, missing energy and jets is investigated, together with the performance of b-tagging and the trigger. The physics potential for a variety of interesting physics processes, within the Standard Model and beyond, is examined. The study comprises a series of notes based on simulations of the detector and physics processes, with particular emphasis given to the data expected from the first years of operation of the LHC at CERN.
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Submitted 14 August, 2009; v1 submitted 28 December, 2008;
originally announced January 2009.
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First results on double beta decay modes of Cd, Te and Zn isotopes with the COBRA experiment
Authors:
The COBRA collaboration,
T. Bloxham,
A. Boston,
J. Dawson,
D. Dobos,
S. P. Fox,
M. Freer,
B. R. Fulton,
C. Gößling,
P. F. Harrison,
M. Junker,
H. Kiel,
J. McGrath,
B. Morgan,
D. Münstermann,
P. Nolan,
S. Oehl,
Y. Ramachers,
C. Reeve,
D. Stewart,
R. Wadsworth,
J. R. Wilson,
K. Zuber
Abstract:
Four 1cm^3 CdZnTe semiconductor detectors were operated in the Gran Sasso National Laboratory to explore the feasibility of such devices for double beta decay searches as proposed for the COBRA experiment. The research involved background studies accompanied by measurements of energy resolution performed at the surface. Energy resolutions sufficient to reduce the contribution of two-neutrino dou…
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Four 1cm^3 CdZnTe semiconductor detectors were operated in the Gran Sasso National Laboratory to explore the feasibility of such devices for double beta decay searches as proposed for the COBRA experiment. The research involved background studies accompanied by measurements of energy resolution performed at the surface. Energy resolutions sufficient to reduce the contribution of two-neutrino double beta decay events to a negligible level for a large scale experiment have already been achieved and further improvements are expected. Using activity measurements of contaminants in all construction materials a background model was developed with the help of Monte Carlo simulations and major background sources were identified. A total exposure of 4.34 kg.days of underground data has been accumulated allowing a search for neutrinoless double beta decay modes of seven isotopes found in CdZnTe. Half-life limits (90% C.L.) are presented for decays to ground and excited states. Four improved lower limits have been obtained, including zero neutrino double electron capture transitions of Zn64 and Te120 to the ground state, which are 1.19*10^{17} years and 2.68*10^{15} years respectively.
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Submitted 18 July, 2007;
originally announced July 2007.
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Experimental study of 113Cd beta decay using CdZnTe detectors
Authors:
C. Goessling,
M. Junker,
H. Kiel,
D. Muenstermann,
S. Oehl,
K. Zuber
Abstract:
A search for the 4-fold forbidden beta decay of \iso{Cd}{113} has been performed with CdZnTe semiconductors. With 0.86 kg $\cdot$ days of statistics a half-life for the decay of $T_{1/2} = (8.2 \pm 0.2 (stat.) ^{+0.2}_{-1.0} (sys.)) \cdot 10^{15}$yrs has been obtained. This is in good agreement with published values. A comparison of the spectral shape with the one given on the Table of Isotopes…
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A search for the 4-fold forbidden beta decay of \iso{Cd}{113} has been performed with CdZnTe semiconductors. With 0.86 kg $\cdot$ days of statistics a half-life for the decay of $T_{1/2} = (8.2 \pm 0.2 (stat.) ^{+0.2}_{-1.0} (sys.)) \cdot 10^{15}$yrs has been obtained. This is in good agreement with published values. A comparison of the spectral shape with the one given on the Table of Isotopes Web-page shows a severe deviation.
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Submitted 12 August, 2005;
originally announced August 2005.
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A Search for various Double Beta Decay Modes of Cd, Te and Zn Isotopes
Authors:
H. Kiel,
D. Münstermann,
K. Zuber
Abstract:
Various double beta decay modes of Cd, Zn and Te isotopes are explored with the help of CdTe and CdZnTe semiconductor detectors. The data set is splitted in an energy range below 1 MeV having a statistics of 134.5 g$\cdot$d and one above 1 MeV resulting in 532 g$\cdot$d. No signals were observed in all channels under investigation. New improved limits for the neutrinoless double beta decay of Zn…
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Various double beta decay modes of Cd, Zn and Te isotopes are explored with the help of CdTe and CdZnTe semiconductor detectors. The data set is splitted in an energy range below 1 MeV having a statistics of 134.5 g$\cdot$d and one above 1 MeV resulting in 532 g$\cdot$d. No signals were observed in all channels under investigation. New improved limits for the neutrinoless double beta decay of Zn70 of $T_{1/2} > 1.3 \cdot 10^{16} yrs$ (90% CL), the longest standing limit of all double beta isotopes, and 0$νβ^+$EC of Te120 of $T_{1/2} > 2.2 \cdot 10^{16} yrs$ (90% CL) are given. For the first time a limit on the half-life of the 2$ν$ECEC of $^{120}$Te of $T_{1/2} > 9.4 \cdot 10^{15} yrs$ (90% CL) is obtained. In addition, limits on 2$ν$ECEC for ground state transitions of Cd106, Cd108 and Zn64 are improved. The obtained results even under rough background conditions show the reliability of CdTe semiconductor detectors for rare nuclear decay searches.
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Submitted 8 April, 2003; v1 submitted 14 January, 2003;
originally announced January 2003.
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An alternative search for the electron capture of Te-123
Authors:
D. Muenstermann,
K. Zuber
Abstract:
A search for the electron capture of Te-123 has been performed using CdZnTe detectors. After a measuring time of 195 h no signal could be found resulting in a lower half-life limt of $T_{1/2} > 3.2 \cdot 10^{16}$ yrs (95 % CL) for this process. This clearly discriminates between existing experimental results which differ by six orders of magnitude and our data are in strong favour of the result…
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A search for the electron capture of Te-123 has been performed using CdZnTe detectors. After a measuring time of 195 h no signal could be found resulting in a lower half-life limt of $T_{1/2} > 3.2 \cdot 10^{16}$ yrs (95 % CL) for this process. This clearly discriminates between existing experimental results which differ by six orders of magnitude and our data are in strong favour of the result with longer half-lifes.
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Submitted 12 November, 2002; v1 submitted 15 April, 2002;
originally announced April 2002.