Showing 1–6 of 6 results for author: Muench, J E

Graphene phase modulators operating in the transparency regime

Authors: H. F. Y. Watson, A. Ruocco, M. Tiberi, J. E. Muench, O. Balci, S. M. Shinde, S. Mignuzzi, M. Pantouvaki, D. Van Thourhout, R. Sordan, A. Tomadin, M. Romagnoli, A. C. Ferrari

Abstract: Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of channels, and increase noise tolerance. To reduce errors when decoding the received signal, intersymbol interference must be minimised. This is achieved with pu… ▽ More Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of channels, and increase noise tolerance. To reduce errors when decoding the received signal, intersymbol interference must be minimised. This is achieved with pure phase modulation, where the phase of the optical signal is controlled without changing its intensity. Phase modulators are characterised by the voltage required to achieve a $π$ phase shift V$_π$, the device length L, and their product V$_π$L. To reduce power consumption, IQ modulators are needed with$<$1V drive voltages and compact (sub-cm) dimensions, which translate in V$_π$L$<$1Vcm. Si and LiNbO$_3$ (LN) IQ modulators do not currently meet these requirements, because V$_π$L$>$1Vcm. Here, we report a double single-layer graphene (SLG) Mach-Zehnder modulator (MZM) with pure phase modulation in the transparent regime, where optical losses are minimised and remain constant with increasing voltage. Our device has $V_πL\sim$0.3Vcm, matching state-of-the-art SLG-based MZMs and plasmonic LN MZMs, but with pure phase modulation and low insertion loss ($\sim$5dB), essential for IQ modulation. Our $V_πL$ is$\sim$5 times lower than the lowest thin-film LN MZMs, and$\sim$3 times lower than the lowest Si MZMs. This enables devices with complementary metal-oxide semiconductor compatible V$_π$L ($<$1Vcm) and smaller footprint than LN or Si MZMs, improving circuit density and reducing power consumption by one order of magnitude. △ Less

Submitted 25 December, 2023; originally announced January 2024.

Monolayer WS$_2$ electro- and photo-luminescence enhancement by TFSI treatment

Authors: A. R. Cadore, B. L. T. Rosa, I. Paradisanos, S. Mignuzzi, D. De Fazio, E. M. Alexeev, J. E. Muench, G. Kakavelakis, S. M. Shinde, D. Yoon, S. Tongay, K. Watanabe, T. Taniguchi, E. Lidorikis, I. Goykhman, G. Soavi, A. C. Ferrari

Abstract: Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across that of different exciton complexes (e.g. biexcitons, trions, quintons) by controlling the charge density. However, these devices have an EL quantum… ▽ More Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across that of different exciton complexes (e.g. biexcitons, trions, quintons) by controlling the charge density. However, these devices have an EL quantum efficiency as low as$\sim$10$^{-4}$\%. Here, we show that the superacid bis-(triuoromethane)sulfonimide (TFSI) treatment of monolayer WS$_2$-LEDs boosts EL quantum efficiency by over one order of magnitude at room temperature. Non-treated devices emit light mainly from negatively charged excitons, while the emission in treated ones predominantly involves radiative recombination of neutral excitons. This paves the way to tunable and efficient LMH-LEDs △ Less

Submitted 2 May, 2023; originally announced May 2023.

High-responsivity graphene photodetectors integrated on silicon microring resonators

Authors: Simone Schuler, Jakob E. Muench, Alfonso Ruocco, Osman Balci, Dries van Thourhout, Vito Sorianello, Marco Romagnoli, Kenji Watanabe, Takashi Taniguchi, Ilya Goykhman, Andrea C. Ferrari, Thomas Mueller

Abstract: Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the low responsivity - electrical output per optical input… ▽ More Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the low responsivity - electrical output per optical input - of GPDs compared to conventional PDs. Here we overcome this shortfall by integrating a photo-thermoelectric GPD with a Si microring resonator. Under critical coupling, we achieve $>$90% light absorption in a $\sim$6 $μ$m SLG channel along the Si waveguide. Exploiting the cavity-enhanced light-matter interaction, causing carriers in SLG to reach $\sim$400 K for an input power of $\sim$0.6 mW, we get a voltage responsivity $\sim$90 V/W, demonstrating the feasibility of our approach. Our device is capable of detecting data rates up to 20 Gbit/s, with a receiver sensitivity enabling it to operate at a 10$^{-9}$ bit-error rate, on par with mature semiconductor technology. The natural generation of a voltage rather than a current, removes the need for transimpedance amplification, with a reduction of the energy-per-bit cost and foot-print, when compared to a traditional semiconductor-based receiver. △ Less

Submitted 6 July, 2020; originally announced July 2020.

Comments: 11 pages, 5 figures

Thermoelectric graphene photodetectors with sub-nanosecond response times at Terahertz frequencies

Authors: Leonardo Viti, Alisson R. Cadore, Xinxin Yang, Andrei Vorobiev, Jakob E. Muench, Kenji Watanabe, Takashi Taniguchi, Jan Stake, Andrea C. Ferrari, Miriam S. Vitiello

Abstract: Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex molecules and cold samples, imaging, metrology, ultra-high-speed data communications, coherent control of quantum systems, quantum optics and for capturing snapshots… ▽ More Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex molecules and cold samples, imaging, metrology, ultra-high-speed data communications, coherent control of quantum systems, quantum optics and for capturing snapshots of ultrafast dynamics, in materials and devices, at the nanoscale. Here, we report room-temperature THz nano-receivers exploiting antenna-coupled graphene field effect transistors integrated with lithographically-patterned high-bandwidth (~100 GHz) chips, operating with a combination of high speed (hundreds ps response time) and high sensitivity (noise equivalent power <120 pWHz-1/2) at 3.4 THz. Remarkably, this is achieved with various antenna and transistor architectures (single-gate, dual-gate), whose operation frequency can be extended over the whole 0.1-10 THz range, thus paving the way for the design of ultrafast graphene arrays in the far infrared, opening concrete perspective for targeting the aforementioned applications. △ Less

Submitted 24 June, 2020; v1 submitted 18 June, 2020; originally announced June 2020.

Comments: This is the unedited authors' version of the article accepted for publication in Nanophotonics 2020 (Online ISSN: 2192-8614)

Waveguide-integrated, plasmonic enhanced graphene photodetectors

Authors: J. E. Muench, A. Ruocco, M. A. Giambra, V. Miseikis, D. Zhang, J. Wang, H. F. Y. Watson, G. C. Park, S. Akhavan, V. Sorianello, M. Midrio, A. Tomadin, C. Coletti, M. Romagnoli, A. C. Ferrari, I. Goykhman

Abstract: We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a$\sim$100nm gap to electrostatically create a p-n-junction and simultaneou… ▽ More We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a$\sim$100nm gap to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele and datacom modules △ Less

Submitted 11 May, 2019; originally announced May 2019.

Journal ref: Nano Lett 19, 7632 (2019)

Broadband, electrically tuneable, third harmonic generation in graphene

Authors: G. Soavi, G. Wang, H. Rostami, D. Purdie, D. De Fazio, T. Ma, B. Luo, J. Wang, A. K. Ott, D. Yoon, S. Bourelle, J. E. Muench, I. Goykhman, S. Dal Conte, M. Celebrano, A. Tomadin, M. Polini, G. Cerullo, A. C. Ferrari

Abstract: Optical harmonic generation occurs when high intensity light ($>10^{10}$W/m$^{2}$) interacts with a nonlinear material. Electrical control of the nonlinear optical response enables applications such as gate-tunable switches and frequency converters. Graphene displays exceptionally strong-light matter interaction and electrically and broadband tunable third order nonlinear susceptibility. Here we s… ▽ More Optical harmonic generation occurs when high intensity light ($>10^{10}$W/m$^{2}$) interacts with a nonlinear material. Electrical control of the nonlinear optical response enables applications such as gate-tunable switches and frequency converters. Graphene displays exceptionally strong-light matter interaction and electrically and broadband tunable third order nonlinear susceptibility. Here we show that the third harmonic generation efficiency in graphene can be tuned by over two orders of magnitude by controlling the Fermi energy and the incident photon energy. This is due to logarithmic resonances in the imaginary part of the nonlinear conductivity arising from multi-photon transitions. Thanks to the linear dispersion of the massless Dirac fermions, ultrabroadband electrical tunability can be achieved, paving the way to electrically-tuneable broadband frequency converters for applications in optical communications and signal processing. △ Less

Submitted 6 October, 2017; originally announced October 2017.

Journal ref: Nature Nanotechnologyvolume 13, 583 (2018)