Showing 1–19 of 19 results for author: Mueller, R P

The impact of stochastic incorporation on atomic-precision Si:P arrays

Authors: Jeffrey A. Ivie, Quinn Campbell, Justin C. Koepke, Mitchell I. Brickson, Peter A. Schultz, Richard P. Muller, Andrew M. Mounce, Daniel R. Ward, Malcom S. Carroll, Ezra Bussmann, Andrew D. Baczewski, Shashank Misra

Abstract: Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within $\sim$1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorpor… ▽ More Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within $\sim$1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorporate into a single lithographic window is manifestly uncertain. We present experimental results indicating that the likelihood of incorporating into an ideally written three-dimer single-donor window is $63 \pm 10\%$ for room-temperature dosing, and corroborate these results with a model for the incorporation kinetics. Nevertheless, further analysis of this model suggests conditions that might raise the incorporation rate to near-deterministic levels. We simulate bias spectroscopy on a chain of comparable dimensions to the array in our yield study, indicating that such an experiment may help confirm the inferred incorporation rate. △ Less

Submitted 25 May, 2021; originally announced May 2021.

Comments: 20 pages, 13 figures

Journal ref: Phys. Rev. Applied 16, 054037 (2021)

Measuring the Fidelity of Asteroid Regolith and Cobble Simulants

Authors: Philip T. Metzger, Daniel T. Britt, Stephen Covey, Cody Schultz, Kevin M. Cannon, Kevin D. Grossman, James G. Mantovani, Robert P. Mueller

Abstract: NASA has developed a "Figure of Merit" method to grade the fidelity of lunar simulants for scientific and engineering purposes. Here we extend the method to grade asteroid simulants, both regolith and cobble variety, and we apply the method to the newly developed asteroid regolith and cobble simulant UCF/DSI-CI-2. The reference material that is used to evaluate this simulant for most asteroid prop… ▽ More NASA has developed a "Figure of Merit" method to grade the fidelity of lunar simulants for scientific and engineering purposes. Here we extend the method to grade asteroid simulants, both regolith and cobble variety, and we apply the method to the newly developed asteroid regolith and cobble simulant UCF/DSI-CI-2. The reference material that is used to evaluate this simulant for most asteroid properties is the Orgueil meteorite. Those properties are the mineralogical and elemental composition, grain density, bulk density of cobbles, magnetic susceptibility, mechanical strength of cobbles, and volatile release patterns. To evaluate the regolith simulant's particle sizing we use a reference model that was based upon the sample returned from Itokawa by Hayabusa, the boulder count on Hayabusa, and four cases of disrupted asteroids that indicate particle sizing of the subsurface material. Compared to these references, the simulant has high figures of merit, indicating it is a good choice for a wide range of scientific and engineering applications. We recommend this methodology to the wider asteroid community and in the near future will apply it to additional asteroid simulants currently under development. △ Less

Submitted 23 December, 2019; originally announced December 2019.

Comments: 42 pages, 11 figures

Journal ref: Icarus 321, 15 March 2019, 632-646

Affordable, Rapid Bootstrap** of the Space Industry and Solar System Civilization

Authors: Philip T. Metzger, Anthony Muscatello, Robert P. Mueller, James Mantovani

Abstract: Advances in robotics and additive manufacturing have become game-changing for the prospects of space industry. It has become feasible to bootstrap a self-sustaining, self-expanding industry at reasonably low cost. Simple modeling was developed to identify the main parameters of successful bootstrap**. This indicates that bootstrap** can be achieved with as little as 12 metric tons (MT) landed… ▽ More Advances in robotics and additive manufacturing have become game-changing for the prospects of space industry. It has become feasible to bootstrap a self-sustaining, self-expanding industry at reasonably low cost. Simple modeling was developed to identify the main parameters of successful bootstrap**. This indicates that bootstrap** can be achieved with as little as 12 metric tons (MT) landed on the Moon during a period of about 20 years. The equipment will be teleoperated and then transitioned to full autonomy so the industry can spread to the asteroid belt and beyond. The strategy begins with a sub-replicating system and evolves it toward full self-sustainability (full closure) via an in situ technology spiral. The industry grows exponentially due to the free real estate, energy, and material resources of space. The mass of industrial assets at the end of bootstrap** will be 156 MT with 60 humanoid robots, or as high as 40,000 MT with as many as 100,000 humanoid robots if faster manufacturing is supported by launching a total of 41 MT to the Moon. Within another few decades with no further investment, it can have millions of times the industrial capacity of the United States. Modeling over wide parameter ranges indicates this is reasonable, but further analysis is needed. This industry promises to revolutionize the human condition. △ Less

Submitted 9 December, 2016; originally announced December 2016.

Comments: 24 pages, 14 figures

Journal ref: Journal of Aerospace Engineering 26.2, 18-29 (2013)

Valley splitting of single-electron Si MOS quantum dots

Authors: John King Gamble, Patrick Harvey-Collard, N. Tobias Jacobson, Andrew D. Baczewski, Erik Nielsen, Leon Maurer, Inès Montaño, Martin Rudolph, M. S. Carroll, C. H. Yang, A. Rossi, A. S. Dzurak, Richard P. Muller

Abstract: Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory rem… ▽ More Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from a new experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both the new experiment and a recently reported one. Through sampling millions of realistic cases of interface roughness, our method provides evidence that, despite radically different processing, the valley physics between the two samples is essentially the same. This work provides the first evidence that valley splitting can be deterministically predicted and controlled in metal oxide semiconductor quantum dots, a critical requirement for such systems to realize a reliable qubit platform. △ Less

Submitted 11 October, 2016; originally announced October 2016.

Comments: 7 pages, 4 figures

Journal ref: Applied Physics Letters 109, 253101 (2016)

Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer

Authors: T. M. Lu, J. K. Gamble, R. P. Muller, E. Nielsen, D. Bethke, G. A. Ten Eyck, T. Pluym, J. R. Wendt, J. Dominguez, M. P. Lilly, M. S. Carroll, M. C. Wanke

Abstract: Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30\%. Here we report the fabrication and low-temperature characterization of quantum dots in Si/Si$_{0.8}$Ge$_{0.2}$ heteros… ▽ More Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30\%. Here we report the fabrication and low-temperature characterization of quantum dots in Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 $μ$m increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication. △ Less

Submitted 29 August, 2016; originally announced August 2016.

The Promise of Quantum Simulation

Authors: Richard P. Muller, Robin Blume-Kohout

Abstract: Quantum simulation promises to be one of the primary application of quantum computers, should one be constructed. This article briefly summarizes the history quantum simulation in light of the recent result of Wang and coworkers demonstrating calculation of the ground and excited states for a HeH+ molecule, and concludes with a discussion of why this and other recent progress in the field suggests… ▽ More Quantum simulation promises to be one of the primary application of quantum computers, should one be constructed. This article briefly summarizes the history quantum simulation in light of the recent result of Wang and coworkers demonstrating calculation of the ground and excited states for a HeH+ molecule, and concludes with a discussion of why this and other recent progress in the field suggests that quantum simulation of quantum chemistry has a bright future. △ Less

Submitted 21 July, 2015; originally announced July 2015.

Journal ref: ACS Nano, 9, 7738 (2015)

Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

Authors: Wayne M. Witzel, Inès Montaño, Richard P. Muller, Malcolm S. Carroll

Abstract: We present a strategy for producing multi-qubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. To avoid degenerate states and maximize the benefit of the gap protection, the scheme is best suited when there are two different kinds of qubits (not mutually resonant… ▽ More We present a strategy for producing multi-qubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. To avoid degenerate states and maximize the benefit of the gap protection, the scheme is best suited when there are two different kinds of qubits (not mutually resonant). Furthermore, we require a robust operating point in control space where the qubits interact with little sensitivity to noise. This allows us to circumvent a No-Go theorem that prevents block-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)]. We show how to apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. This system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron spin preparation and measurement has also been demonstrated. Putting this all together, we present a robust universal gate set for quantum computation. △ Less

Submitted 22 October, 2015; v1 submitted 8 October, 2014; originally announced October 2014.

Comments: Added noise sensitivity figures (matching published version)

Journal ref: Phys. Rev. B 92, 081407(R) (2015)

Multivalley effective mass theory simulation of donors in silicon

Authors: John King Gamble, N. Tobias Jacobson, Erik Nielsen, Andrew D. Baczewski, Jonathan E. Moussa, Inès Montaño, Richard P. Muller

Abstract: Last year, Salfi et al. made the first direct measurements of a donor wave function and found extremely good theoretical agreement with atomistic tight-binding [Salfi et al., Nat. Mater. 13, 605 (2014)]. Here, we show that multi-valley effective mass theory, applied properly, does achieve close agreement with tight-binding and hence gives reliable predictions. To demonstrate this, we variationally… ▽ More Last year, Salfi et al. made the first direct measurements of a donor wave function and found extremely good theoretical agreement with atomistic tight-binding [Salfi et al., Nat. Mater. 13, 605 (2014)]. Here, we show that multi-valley effective mass theory, applied properly, does achieve close agreement with tight-binding and hence gives reliable predictions. To demonstrate this, we variationally solve the coupled six-valley Shindo-Nara equations, including silicon's full Bloch functions. Surprisingly, we find that including the full Bloch functions necessitates a tetrahedral, rather than spherical, donor central cell correction to accurately reproduce the experimental energy spectrum of a phosphorus impurity in silicon. We cross-validate this method against atomistic tight-binding calculations, showing that the two theories agree well for the calculation of donor-donor tunnel coupling. Further, we benchmark our results by performing a statistical uncertainty analysis, confirming that derived quantities such as the wave function profile and tunnel couplings are robust with respect to variational energy fluctuations. Finally, we apply this method to exhaustively enumerate the tunnel coupling for all donor-donor configurations within a large search volume, demonstrating conclusively that the tunnel coupling has no spatially stable regions. Though this instability is problematic for reliably coupling donor pairs for two-qubit operations, we identify specific target locations where donor qubits can be placed with scanning tunneling microscopy technology to achieve reliably large tunnel couplings. △ Less

Submitted 2 November, 2015; v1 submitted 13 August, 2014; originally announced August 2014.

Comments: 10 pages, 4 figures, 3 supplemental data files

Journal ref: Phys. Rev. B 91, 235318 (2015)

Efficient self-consistent quantum transport simulator for quantum devices

Authors: Xujiao Gao, Denis Mamaluy, Erik Nielsen, Ralph W. Young, Amir Shirkhorshidian, Michael P. Lilly, Nathan C. Bishop, Malcolm S. Carroll, Richard P. Muller

Abstract: We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled… ▽ More We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled CBR-Poisson equations is achieved by using the predictor-corrector iteration scheme with the optional Anderson acceleration. In addition, we introduce a new way to convert an equilibrium electrostatic barrier potential calculated from an external simulator to an effective do** profile, which is then used by the CBR-Poisson code for transport simulation of the barrier under non-zero biases. The code has been applied to simulate the quantum transport in a double barrier structure and across a tunnel barrier in a silicon double quantum dot. Extremely fast self-consistent 1D simulations of the differential conductance across a tunnel barrier in the quantum dot show better qualitative agreement with experiment than non-self-consistent simulations. △ Less

Submitted 28 March, 2014; originally announced March 2014.

QCAD Simulation and Optimization of Semiconductor Quantum Dots

Authors: Xujiao Gao, Erik Nielsen, Richard P. Muller, Ralph W. Young, Andrew G. Salinger, Nathan C. Bishop, Michael P. Lilly, Malcolm S. Carroll

Abstract: We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for quantum bits (qubits). This finite-element simulator has three differentiating features: (i) its core contains nonlinear Poisson, effective mass Schrodinger, and Configuration Interaction solvers that have massively paral… ▽ More We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for quantum bits (qubits). This finite-element simulator has three differentiating features: (i) its core contains nonlinear Poisson, effective mass Schrodinger, and Configuration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; and (iii) it interfaces directly with the full-featured optimization engine Dakota. In this work, we describe the capabilities and implementation of the QCAD simulation tool, and show how it can be used to both analyze existing experimental QD devices through capacitance calculations, and aid in the design of few-electron multi-QDs. In particular, we observe that computed capacitances are in rough agreement with experiment, and that quantum confinement increases capacitance when the number of electrons is fixed in a quantum dot. Coupling of QCAD with the optimizer Dakota allows for rapid identification and improvement of device layouts that are likely to exhibit few-electron quantum dot characteristics. △ Less

Submitted 28 March, 2014; originally announced March 2014.

Journal ref: Journal of Applied Physics, 114, 164302 (2013)

A many-electron tight binding method for the analysis of quantum dot systems

Authors: Erik Nielsen, Rajib Rahman, Richard P. Muller

Abstract: We present a method which computes many-electron energies and eigenfunctions by a full configuration interaction which uses a basis of atomistic tight-binding wave functions. This approach captures electron correlation as well as atomistic effects, and is well suited to solid state quantum dot systems containing few electrons, where valley physics and disorder contribute significantly to device be… ▽ More We present a method which computes many-electron energies and eigenfunctions by a full configuration interaction which uses a basis of atomistic tight-binding wave functions. This approach captures electron correlation as well as atomistic effects, and is well suited to solid state quantum dot systems containing few electrons, where valley physics and disorder contribute significantly to device behavior. Results are reported for a two-electron silicon double quantum dot as an example. △ Less

Submitted 22 February, 2012; originally announced February 2012.

Comments: 9 pages, 6 figures

Voltage controlled exchange energies of a two electron silicon double quantum dot with and without charge defects in the dielectric

Authors: Rajib Rahman, Erik Nielsen, Richard P. Muller, Malcolm S. Carroll

Abstract: Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double quantum dots (DQD) represents a system that is very sensitive to charge position and is of interest for quantum computing. We calculate the energy spectrum of… ▽ More Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double quantum dots (DQD) represents a system that is very sensitive to charge position and is of interest for quantum computing. We calculate the energy spectrum of the silicon double quantum dot system using a full configuration interaction that uses tight binding single particle wavefunctions. This approach allows us to analyze atomic scale charge perturbations of the DQD while accounting for the details of the complex momentum space physics of silicon (i.e., valley and valley-orbit physics). We analyze how the energy levels and exchange curves for a DQD are affected by nearby charge defects at various positions relative to the dot, which are consistent with defects expected in the metal-oxide-semiconductor system. △ Less

Submitted 17 December, 2011; originally announced December 2011.

Comments: 5 pages, 3 figures

Journal ref: Physical Review B 85, 125423 (2012)

Configuration interaction calculations of the controlled phase gate in double quantum dot qubits

Authors: Erik Nielsen, Richard P. Muller, Malcolm S. Carroll

Abstract: We consider qubit coupling resulting from the capacitive coupling between two double quantum dot (DQD) single-triplet qubits. Calculations of the coupling when the two DQDs are detuned symmetrically or asymmetrically are performed using a full configuration interaction (CI). The full CI reveals behavior that is not observed by more commonly used approximations such as Heitler London or Hund Mullik… ▽ More We consider qubit coupling resulting from the capacitive coupling between two double quantum dot (DQD) single-triplet qubits. Calculations of the coupling when the two DQDs are detuned symmetrically or asymmetrically are performed using a full configuration interaction (CI). The full CI reveals behavior that is not observed by more commonly used approximations such as Heitler London or Hund Mulliken, particularly related to the operation of both DQDs in the (0,2) charge sector. We find that there are multiple points in detuning-space where a two-qubit entangling gate can be realized, and that trade-offs between coupling magnitude and sensitivity to fluctuations in detuning make a case for operating the gate in the (0,2) regime not commonly considered. △ Less

Submitted 7 June, 2011; originally announced June 2011.

Comments: 4 pages, 5 figures

Coherent electron transport by adiabatic passage in an imperfect donor chain

Authors: Rajib Rahman, Richard P. Muller, James E. Levy, Malcolm S. Carroll, Gerhard Klimeck, Andrew D. Greentree, Lloyd C. L. Hollenberg

Abstract: Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or donors, a 1D chain of donors in Si is of particular interest due to the natural confining potential of donors that can in principle help reduce the gate densiti… ▽ More Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or donors, a 1D chain of donors in Si is of particular interest due to the natural confining potential of donors that can in principle help reduce the gate densities in solid-state quantum computing architectures. Using detailed atomistic modeling, we investigate CTAP in a more realistic triple donor system in the presence of inevitable fabrication imperfections. In particular, we investigate how an adiabatic pathway for CTAP is affected by donor misplacements, and propose schemes to correct for such errors. We also investigate the sensitivity of the adiabatic path to gate voltage fluctuations. The tight-binding based atomistic treatment of straggle used here may benefit understanding of other donor nanostructures, such as donor-based charge and spin qubits. Finally, we derive an effective 3 \times 3 model of CTAP that accurately resembles the voltage tuned lowest energy states of the multi-million atom tight-binding simulations, and provides a translation between intensive atomistic Hamiltonians and simplified effective Hamiltonians while retaining the relevant atomic-scale information. This method can help characterize multi-donor experimental structures quickly and accurately even in the presence of imperfections, overcoming some of the numeric intractabilities of finding optimal eigenstates for non-ideal donor placements. △ Less

Submitted 5 August, 2010; originally announced August 2010.

Comments: 9 pages, 8 figures

Journal ref: Physical Review B 82, 155315 (2010)

A configuration interaction analysis of exchange in double quantum dots

Authors: Erik Nielsen, Richard P. Muller

Abstract: We describe in detail a full configuration interaction (CI) method designed to analyze systems of quantum dots. This method is capable of exploring large regions of parameter space, like more approximate approaches such as Heitler London and Hund Mulliken, though it is not limited to weakly coupled dots. In particular, this method is well-suited to the analysis of solid state quantum-dot-based qub… ▽ More We describe in detail a full configuration interaction (CI) method designed to analyze systems of quantum dots. This method is capable of exploring large regions of parameter space, like more approximate approaches such as Heitler London and Hund Mulliken, though it is not limited to weakly coupled dots. In particular, this method is well-suited to the analysis of solid state quantum-dot-based qubits, and we consider the case of a double quantum dot (DQD) singlet-triplet qubit. Past analyses have used techniques which are either substantially restricted in the regimes they can be used, or device specific and unsuited to exploration of a large regions of parameter space. We analyze how the DQD exchange energy, which is central to the operation of qubit rotation gates, depends on a generic set of system parameters including magnetic field, DQD detuning, dot size, and dot separation. We discuss the implications of these results to the construction of real devices. We provide a benchmark of the CI by directly comparing results from the CI method with exact results for two electrons in a single parabolic potential (dot). △ Less

Submitted 14 June, 2010; originally announced June 2010.

Comments: 15 pages, 9 figures

Implications of Simultaneous Requirements for Low Noise Exchange Gates in Double Quantum Dots

Authors: Erik Nielsen, Ralph W. Young, Richard P. Muller, M. S. Carroll

Abstract: Achieving low-error, exchange-interaction operations in quantum dots for quantum computing imposes simultaneous requirements on the exchange energy's dependence on applied voltages. A double quantum dot (DQD) qubit, approximated with a quadratic potential, is solved using a full configuration interaction method. This method is more accurate than Heitler-London and Hund-Mulliken approaches and ca… ▽ More Achieving low-error, exchange-interaction operations in quantum dots for quantum computing imposes simultaneous requirements on the exchange energy's dependence on applied voltages. A double quantum dot (DQD) qubit, approximated with a quadratic potential, is solved using a full configuration interaction method. This method is more accurate than Heitler-London and Hund-Mulliken approaches and captures new and significant qualitative behavior. We show that multiple regimes can be found in which the exchange energy's dependence on the bias voltage between the dots is compatible with current quantum error correction codes and state-of-the-art electronics. Identifying such regimes may prove valuable for the construction and operation of quantum gates that are robust to charge fluctuations, particularly in the case of dynamically corrected gates. △ Less

Submitted 8 April, 2010; v1 submitted 31 August, 2009; originally announced September 2009.

Comments: 8 pages, 6 figures

Calculation of chemical reaction energies using the AM05 density functional

Authors: Richard P. Muller, Ann E. Mattsson, Curtis L. Janssen

Abstract: We present results that compare the accuracy of the AM05 density functional to a set of chemical reaction energies. The reactions were generated from the singlet species in the well-known G2 test suite. Our results show that, in general, the AM05 functional performs nearly as well as the other "pure" density functionals, but none of these perform as well as the hybrid B3LYP functional. These res… ▽ More We present results that compare the accuracy of the AM05 density functional to a set of chemical reaction energies. The reactions were generated from the singlet species in the well-known G2 test suite. Our results show that, in general, the AM05 functional performs nearly as well as the other "pure" density functionals, but none of these perform as well as the hybrid B3LYP functional. These results are nonetheless encouraging because the AM05 functional arises from very simple assumptions, and does not require the calculation of the Hartree-Fock exchange integrals. △ Less

Submitted 29 October, 2009; v1 submitted 12 August, 2009; originally announced August 2009.

Enhancement mode double top gated MOS nanostructures with tunable lateral geometry

Authors: E. P. Nordberg, G. A. Ten Eyck, H. L. Stalford, R. P. Muller, R. W. Young, K. Eng, L. A. Tracy, K. D. Childs, J. R. Wendt, R. K. Grubbs, J. Stevens, M. P. Lilly, M. A. Eriksson, M. S. Carroll

Abstract: We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect… ▽ More We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect densities (i.e. interface traps and fixed oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities for which Si quantum dots do not exhibit parasitic dot formation. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully-qualified CMOS facility. △ Less

Submitted 11 September, 2009; v1 submitted 19 June, 2009; originally announced June 2009.

Comments: 11 pages, 6 figures, 3 tables, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 80, 115331 (2009)

Atomistic simulations of adiabatic coherent electron transport in triple donor systems

Authors: Rajib Rahman, Seung H. Park, Jared H. Cole, Andrew D. Greentree, Richard P. Muller, Gerhard Klimeck, Lloyd C. L. Hollenberg

Abstract: A solid-state analogue of Stimulated Raman Adiabatic Passage can be implemented in a triple well solid-state system to coherently transport an electron across the wells with exponentially suppressed occupation in the central well at any point of time. Termed coherent tunneling adiabatic passage (CTAP), this method provides a robust way to transfer quantum information encoded in the electronic sp… ▽ More A solid-state analogue of Stimulated Raman Adiabatic Passage can be implemented in a triple well solid-state system to coherently transport an electron across the wells with exponentially suppressed occupation in the central well at any point of time. Termed coherent tunneling adiabatic passage (CTAP), this method provides a robust way to transfer quantum information encoded in the electronic spin across a chain of quantum dots or donors. Using large scale atomistic tight-binding simulations involving over 3.5 million atoms, we verify the existence of a CTAP pathway in a realistic solid-state system: gated triple donors in silicon. Realistic gate profiles from commercial tools were combined with tight-binding methods to simulate gate control of the donor to donor tunnel barriers in the presence of cross-talk. As CTAP is an adiabatic protocol, it can be analyzed by solving the time independent problem at various stages of the pulse - justifying the use of time-independent tight-binding methods to this problem. Our results show that a three donor CTAP transfer, with inter-donor spacing of 15 nm can occur on timescales greater than 23 ps, well within experimentally accessible regimes. The method not only provides a tool to guide future CTAP experiments, but also illuminates the possibility of system engineering to enhance control and transfer times. △ Less

Submitted 5 March, 2009; originally announced March 2009.

Comments: 8 pages, 5 figures

Journal ref: Physical Review B 80, 035302 (2009)