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Towards a Topological Classification of Nonadiabaticity in Chemical Reactions
Authors:
Christopher Daggett,
Kaijie Yang,
Chaoxing Liu,
Lukas Muechler
Abstract:
The application of topology, a branch of mathematics, to the study of electronic states in crystalline materials has had a revolutionary impact on the field of condensed matter physics. For example, the development of topological band theory has delivered new approaches and tools to characterize the electronic structure of materials, resulting in the discovery of new phases of matter with exotic p…
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The application of topology, a branch of mathematics, to the study of electronic states in crystalline materials has had a revolutionary impact on the field of condensed matter physics. For example, the development of topological band theory has delivered new approaches and tools to characterize the electronic structure of materials, resulting in the discovery of new phases of matter with exotic properties. In the framework of topological band theory, the crossings between energy levels of electrons are characterized by topological invariants, which predict the presence of topological boundary states. Given the frequency of energy level crossings on the potential energy surface in molecules, the applicability of these concepts to molecular systems could be of great interest for our understanding of reaction dynamics. However, challenges arise due to differing quantum mechanical descriptions of solids and molecules. Out work aims to bridge the gap between topological band theory and molecular chemistry. We propose that the Euler Class, a topological invariant, can be used to categorize and analyse the distribution of nonadiabatic couplings on the potential energy surface. To exemplify this connection, we introduce a model system with two distinct regimes that are characterized by different values of the Euler Class, yet identical potential energy surfaces. Contrary to expectations set by the Born-Oppenheimer approximation, we propose that these two regimes don't exhibit identical dynamics, due to a qualitatively distinct distribution of nonadiabatic couplings.
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Submitted 17 October, 2023;
originally announced October 2023.
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Quantum embedding methods for correlated excited states of point defects: Case studies and challenges
Authors:
Lukas Muechler,
Danis I. Badrtdinov,
Alexander Hampel,
Jennifer Cano,
Malte Rösner,
Cyrus E. Dreyer
Abstract:
A quantitative description of the excited electronic states of point defects and impurities is crucial for understanding materials properties, and possible applications of defects in quantum technologies. This is a considerable challenge for computational methods, since Kohn-Sham density-functional theory (DFT) is inherently a ground state theory, while higher-level methods are often too computati…
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A quantitative description of the excited electronic states of point defects and impurities is crucial for understanding materials properties, and possible applications of defects in quantum technologies. This is a considerable challenge for computational methods, since Kohn-Sham density-functional theory (DFT) is inherently a ground state theory, while higher-level methods are often too computationally expensive for defect systems. Recently, embedding approaches have been applied that treat defect states with many-body methods, while using DFT to describe the bulk host material. We implement such an embedding method, based on Wannierization of defect orbitals and the constrained random-phase approximation approach, and perform systematic characterization of the method for three distinct systems with current technological relevance: a carbon dimer replacing a B and N pair in bulk hexagonal BN (C$_{\text{B}}$C$_{\text{N}}$), the negatively charged nitrogen-vacancy center in diamond (NV$^-$), and an Fe impurity on the Al site in wurtzite AlN ($\text{Fe}_{\text{Al}}$). For C$_{\text{B}}$C$_{\text{N}}$ we show that the embedding approach gives many-body states in agreement with analytical results on the Hubbard dimer model, which allows us to elucidate the effects of the DFT functional and double-counting correction. For the NV$^-$ center, our method demonstrates good quantitative agreement with experiments for the zero-phonon line of the triplet-triplet transition. Finally, we illustrate challenges associated with this method for determining the energies and orderings of the complex spin multiplets in $\text{Fe}_{\text{Al}}$.
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Submitted 8 March, 2022; v1 submitted 18 May, 2021;
originally announced May 2021.
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Signature of an Ultrafast Photo-Induced Lifshitz Transition in the Nodal-Line Semimetal ZrSiTe
Authors:
Robert J. Kirby,
Lukas Muechler,
Sebastian Klemenz,
Caroline Weinberg,
Austin Ferrenti,
Mohamed Oudah,
Daniele Fausti,
Gregory D. Scholes,
Leslie M. Schoop
Abstract:
Here we report an ultrafast optical spectroscopic study of the nodal-line semimetal ZrSiTe. Our measurements reveal that, converse to other compounds of the family, the sudden injection of electronic excitations results in a strongly coherent response of an $A_{1g}$ phonon mode which dynamically modifies the distance between Zr and Te atoms and Si layers. "Frozen phonon" DFT calculations, in which…
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Here we report an ultrafast optical spectroscopic study of the nodal-line semimetal ZrSiTe. Our measurements reveal that, converse to other compounds of the family, the sudden injection of electronic excitations results in a strongly coherent response of an $A_{1g}$ phonon mode which dynamically modifies the distance between Zr and Te atoms and Si layers. "Frozen phonon" DFT calculations, in which band structures are calculated as a function of nuclear position along the phonon mode coordinate, show that large displacements along this mode alter the material's electronic structure significantly, forcing bands to approach and even cross the Fermi energy. The incoherent part of the time domain response reveals that a delayed electronic response at low fluence discontinuously evolves into an instantaneous one for excitation densities larger than $3.43 \times 10^{17}$ cm$^{-3}$. This sudden change of the dissipative channels for electronic excitations is indicative of an ultrafast Lifshitz transition which we tentatively associate to a change in topology of the Fermi surface driven by a symmetry preserving $A_{1g}$ phonon mode.
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Submitted 9 November, 2020;
originally announced November 2020.
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Quasiparticle interference observation of the topologically non-trivial drumhead surface state in ZrSiTe
Authors:
B. A. Stuart,
Seokhwan Choi,
Jisun Kim,
Lukas Muechler,
Raquel Queiroz,
Mohamed Oudah,
L. M. Schoop,
D. A. Bonn,
S. A. Burke
Abstract:
Drumhead surface states that link together loops of nodal lines arise in Dirac nodal-line semimetals as a consequence of the topologically non-trivial band crossings. We used low-temperature scanning tunneling microscopy and Fourier-transformed scanning tunneling spectroscopy to investigate the quasiparticle interference (QPI) properties of ZrSiTe. Our results show two scattering signals across th…
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Drumhead surface states that link together loops of nodal lines arise in Dirac nodal-line semimetals as a consequence of the topologically non-trivial band crossings. We used low-temperature scanning tunneling microscopy and Fourier-transformed scanning tunneling spectroscopy to investigate the quasiparticle interference (QPI) properties of ZrSiTe. Our results show two scattering signals across the drumhead state resolving the energy-momentum relationship through the occupied and unoccupied energy ranges it is predicted to span. Observation of this drumhead state is in contrast to previous studies on ZrSiS and ZrSiSe, where the QPI was dominated by topologically trivial bulk bands and surface states. Furthermore, we observe a near $\mathbf{k} \rightarrow -\mathbf{k}$ scattering process across the $Γ$-point, enabled by scattering between the spin-split drumhead bands in this material.
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Submitted 18 February, 2022; v1 submitted 30 September, 2020;
originally announced October 2020.
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Influence of point defects on the electronic and topological properties of monolayer WTe$_2$
Authors:
Lukas Muechler,
Wei Hu,
Chao Yang,
Lin Lin,
Roberto Car
Abstract:
In some topological insulators, such as graphene and WTe$_2$, band inversion originates from chemical bonding and space group symmetry, in contrast to materials such as Bi$_2$Se$_3$, where the band inversion derives from relativistic effects in the atoms. In the former, band inversion is susceptible to changes of the chemical environment, e.g. by defects, while the latter are less affected by defe…
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In some topological insulators, such as graphene and WTe$_2$, band inversion originates from chemical bonding and space group symmetry, in contrast to materials such as Bi$_2$Se$_3$, where the band inversion derives from relativistic effects in the atoms. In the former, band inversion is susceptible to changes of the chemical environment, e.g. by defects, while the latter are less affected by defects due to the larger energy scale associated with atomic relativistic effects. Motivated by recent experiments, we study the effect of Te-vacancies and Te-adatoms on the electronic properties of WTe$_2$. We find that the Te-vacancies have a formation energy of $2.21$ eV, while the formation energy of the Te-adatoms is much lower with $0.72$ eV. The vacancies strongly influence the band structure and we present evidence that band inversion is already reversed at the nominal composition of WTe$_{1.97}$. In contrast, we show that the adatoms do not change the electronic structure in the vicinity of the Fermi level and thus the topological properties. Our findings indicate that Te-adatoms should be present in thin films that are grown in a Te-rich environment, and we suggest that they have been observed in scanning tunneling microscopy experiments.
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Submitted 8 November, 2019; v1 submitted 5 November, 2019;
originally announced November 2019.
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Superconducting order parameter of the nodal-line semimetal NaAlSi
Authors:
Lukas Muechler,
Zurab Guguchia,
Jean-Christophe Orain,
Jürgen Nuss,
Leslie M. Schoop,
Ronny Thomale,
Fabian O. von Rohr
Abstract:
Nodal-line semimetals are topologically non-trivial states of matter featuring band crossings along a closed curve, i.e. nodal-line, in momentum space. Through a detailed analysis of the electronic structure, we show for the first time that the normal state of the superconductor NaAlSi, with a critical temperature of $T_{\rm c} \approx$ 7 K, is a nodal-line semimetal, where the complex nodal-line…
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Nodal-line semimetals are topologically non-trivial states of matter featuring band crossings along a closed curve, i.e. nodal-line, in momentum space. Through a detailed analysis of the electronic structure, we show for the first time that the normal state of the superconductor NaAlSi, with a critical temperature of $T_{\rm c} \approx$ 7 K, is a nodal-line semimetal, where the complex nodal-line structure is protected by non-symmorphic mirror crystal symmetries. We further report on muon spin rotation experiments revealing that the superconductivity in NaAlSi is truly of bulk nature, featuring a fully gapped Fermi-surface. The temperature-dependent magnetic penetration depth can be well described by a two-gap model consisting of two $s$-wave symmetric gaps with $Δ_1 =$ 0.6(2) meV and $Δ_2 =$ 1.39(1) meV. The zero-field muon experiment indicates that time-reversal symmetry is preserved in the superconducting state. Our observations suggest that notwithstanding its topologically non-trivial band structure, NaAlSi may be suitably interpreted as a conventional London superconductor, while more exotic superconducting gap symmetries cannot be excluded. The intertwining of topological electronic states and superconductivity renders NaAlSi a prototypical platform to search for unprecedented topological quantum phases.
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Submitted 15 September, 2019;
originally announced September 2019.
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Modular Arithmetic with Nodal Lines: Drumhead Surface States in ZrSiTe
Authors:
Lukas Muechler,
Andreas Topp,
Raquel Queiroz,
Maxim Krivenkov,
Andrei Varykhalov,
Jennifer Cano,
Christian R. Ast,
Leslie M. Schoop
Abstract:
We study the electronic structure of the nodal line semimetal ZrSiTe both experimentally and theoretically. We find two different surface states in ZrSiTe - topological drumhead surface states and trivial floating band surface states. Using the spectra of Wilson loops, we show that a non-trivial Berry phase that exists in a confined region within the Brillouin Zone gives rise to the topological dr…
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We study the electronic structure of the nodal line semimetal ZrSiTe both experimentally and theoretically. We find two different surface states in ZrSiTe - topological drumhead surface states and trivial floating band surface states. Using the spectra of Wilson loops, we show that a non-trivial Berry phase that exists in a confined region within the Brillouin Zone gives rise to the topological drumhead-type surface states. The $\mathbb{Z}_2$ structure of the Berry phase induces a $\mathbb{Z}_2$ 'modular arithmetic' of the surface states, allowing surface states deriving from different nodal lines to hybridize and gap out, which can be probed by a set of Wilson loops. Our findings are confirmed by \textit{ab-initio} calculations and angle-resolved photoemission experiments, which are in excellent agreement with each other and the topological analysis. This is the first complete characterization of topological surface states in the family of square-net based nodal line semimetals and thus fundamentally increases the understanding of the topological nature of this growing class of topological semimetals.
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Submitted 4 September, 2019;
originally announced September 2019.
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A topological classification of molecules and chemical reactions with a perplectic structure
Authors:
Lukas Muechler
Abstract:
In this paper, a topological classification of molecules and their chemical reactions is proposed on a single particle level . We consider zero-dimensional electronic Hamiltonians in a real-space tight-binding basis with spinless time-reversal symmetry and an additional spatial reflection symmetry. The symmetry gives rise to a perplectic structure and suggests a $\mathbb{Z}_2$ invariant in form of…
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In this paper, a topological classification of molecules and their chemical reactions is proposed on a single particle level . We consider zero-dimensional electronic Hamiltonians in a real-space tight-binding basis with spinless time-reversal symmetry and an additional spatial reflection symmetry. The symmetry gives rise to a perplectic structure and suggests a $\mathbb{Z}_2$ invariant in form of a pfaffian, which can be captured by an entanglement cut. We apply our findings to a class of chemical reactions studied by Woodward and Hoffmann, where a reflection symmetry is preserved along a one-dimensional reaction path and argue that the topological classification should contribute to the rate constants of these reactions. More concretely, we find that a reaction takes place experimentally whenever the reactants and products can be adiabatically deformed into each other, while reactions that require a change of topological invariants have not been observed experimentally.
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Submitted 28 February, 2019; v1 submitted 20 December, 2018;
originally announced December 2018.
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Custodial glide symmetry of quantum spin Hall edge modes in WTe$_2$ monolayer
Authors:
Seulgi Ok,
Lukas Muechler,
Domenico Di Sante,
Giorgio Sangiovanni,
Ronny Thomale,
Titus Neupert
Abstract:
A monolayer of WTe$_2$ has been shown to display quantum spin Hall (QSH) edge modes persisting up to 100~K in transport experiments. Based on density-functional theory calculations and symmetry-based model building including the role of correlations and substrate support, we develop an effective electronic model for WTe$_2$ which fundamentally differs from other prototypical QSH settings: we find…
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A monolayer of WTe$_2$ has been shown to display quantum spin Hall (QSH) edge modes persisting up to 100~K in transport experiments. Based on density-functional theory calculations and symmetry-based model building including the role of correlations and substrate support, we develop an effective electronic model for WTe$_2$ which fundamentally differs from other prototypical QSH settings: we find that the extraordinary robustness of quantum spin Hall edge modes in WTe$_2$ roots in a glide symmetry due to which the topological gap opens away from high-symmetry points in momentum space. While the indirect bulk gap is much smaller, the glide symmetry implies a large direct gap of up to 1~eV in the Brillouin zone region of the dispersing edge modes, and hence enables sharply boundary-localized QSH edge states depending on the specific boundary orientation.
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Submitted 1 November, 2018;
originally announced November 2018.
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Heusler, Weyl, and Berry
Authors:
Kaustuv Manna,
Yan Sun,
Lukas Müchler,
Jürgen Kübler,
Claudia Felser
Abstract:
Heusler materials, initially discovered by Fritz Heusler more than a century ago, have grown into a family of more than 1000 compounds, synthesized from combinations of more than 40 elements. These materials show a wide range of properties, but new properties are constantly being found. Most recently, by incorporating heavy elements that can give rise to strong spin-orbit coupling (SOC), non-trivi…
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Heusler materials, initially discovered by Fritz Heusler more than a century ago, have grown into a family of more than 1000 compounds, synthesized from combinations of more than 40 elements. These materials show a wide range of properties, but new properties are constantly being found. Most recently, by incorporating heavy elements that can give rise to strong spin-orbit coupling (SOC), non-trivial topological phases of matter, such as topological insulators (TIs), have been discovered in Heusler materials. Moreover, the interplay of symmetry, SOC and magnetic structure allows for the realization of a wide variety of topological phases through Berry curvature design. Weyl points and nodal lines can be manipulated by various external perturbations, which results in exotic properties such as the chiral anomaly, and large anomalous spin and topological Hall effects. The combination of a non-collinear magnetic structure and Berry curvature gives rise a non-zero anomalous Hall effect, which was first observed in the antiferromagnets Mn3Sn and Mn3Ge. Besides this k-space Berry curvature, Heusler compounds with non-collinear magnetic structures also possess real-space topological states in the form of magnetic antiskyrmions, which have not yet been observed in other materials. The possibility of directly manipulating the Berry curvature shows the importance of understanding both the electronic and magnetic structures of Heusler compounds. Together, with the new topological viewpoint and the high tunability, novel physical properties and phenomena await discovery in Heusler compounds.
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Submitted 11 February, 2018;
originally announced February 2018.
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Prediction of a magnetic Weyl semimetal without spin-orbit coupling and strong anomalous Hall effect in the Heusler compensated ferrimagnet Ti2MnAl
Authors:
Wujun Shi,
Lukas Muechler,
Kaustuv Manna,
Yang Zhang,
Klaus Koepernik,
Roberto Car,
Jeroen van den Brink,
Claudia Felser,
Yan Sun
Abstract:
We predict a magnetic Weyl semimetal in the inverse Heusler Ti2MnAl, a compensated ferrimagnet with a vanishing net magnetic moment and a Curie temperature of over 650 K. Despite the vanishing net magnetic moment, we calculate a large intrinsic anomalous Hall effect (AHE) of about 300 S/cm. It derives from the Berry curvature distribution of the Weyl points, which are only 14 meV away from the Fer…
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We predict a magnetic Weyl semimetal in the inverse Heusler Ti2MnAl, a compensated ferrimagnet with a vanishing net magnetic moment and a Curie temperature of over 650 K. Despite the vanishing net magnetic moment, we calculate a large intrinsic anomalous Hall effect (AHE) of about 300 S/cm. It derives from the Berry curvature distribution of the Weyl points, which are only 14 meV away from the Fermi level and isolated from trivial bands. Different from antiferromagnets Mn3X (X= Ge, Sn, Ga, Ir, Rh, and Pt), where the AHE originates from the non-collinear magnetic structure, the AHE in Ti2MnAl stems directly from the Weyl points and is topologically protected. The large anomalous Hall conductivity (AHC) together with a low charge carrier concentration should give rise to a large anomalous Hall angle. In contrast to the Co-based ferromagnetic Heusler compounds, the Weyl nodes in Ti2MnAl do not derive from nodal lines due to the lack of mirror symmetries in the inverse Heusler structure. Since the magnetic structure breaks spin-rotation symmetry, the Weyl nodes are stable without SOC. Moreover, because of the large separation between Weyl points of opposite topological charge, the Fermi arcs extent up to 75% of the reciprocal lattice vectors in length. This makes Ti2MnAl an excellent candidate for the comprehensive study of magnetic Weyl semimetals. It is the first example of a material with Weyl points, large anomalous Hall effect and angle despite a vanishing net magnetic moment.
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Submitted 24 September, 2018; v1 submitted 10 January, 2018;
originally announced January 2018.
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Topological surface Fermi arcs in the magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$
Authors:
Qiunan Xu,
Enke Liu,
Wujun Shi,
Lukas Muechler,
Jacob Gayles,
Claudia Felser,
Yan Sun
Abstract:
Very recently, the half-metallic compound Co$_3$Sn$_2$S$_2$ was predicted to be a magnetic WSM with Weyl points only 60 meV above the Fermi level ($E_F$). Owing to the low charge carrier density and large Berry curvature induced,Co$_3$Sn$_2$S$_2$ possesses both a large anomalous Hall conductivity (AHC) and a large anomalous Hall angle (AHA), which provide strong evidence for the existence of Weyl…
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Very recently, the half-metallic compound Co$_3$Sn$_2$S$_2$ was predicted to be a magnetic WSM with Weyl points only 60 meV above the Fermi level ($E_F$). Owing to the low charge carrier density and large Berry curvature induced,Co$_3$Sn$_2$S$_2$ possesses both a large anomalous Hall conductivity (AHC) and a large anomalous Hall angle (AHA), which provide strong evidence for the existence of Weyl points in Co$_3$Sn$_2$S$_2$. In this work, we theoretically studied the surface topological feature of Co$_3$Sn$_2$S$_2$ and its counterpart Co$_3$Sn$_2$Se$_2$. By cleaving the sample at the weak Sn--S/Se bonds, one can achieve two different surfaces terminated with Sn and S/Se atoms, respectively. The resulting Fermi arc related states can range from the energy of the Weyl points to $E_F$--0.1 eV in the Sn-terminated surface. Therefore, it should be possible to observe the Fermi arcs in angle-resolved photoemission spectroscopy (ARPES) measurements. Furthermore, in order to simulate quasiparticle interference (QPI) in scanning tunneling microscopy (STM) measurements, we also calculated the joint density of states (JDOS) for both terminals. This work would be helpful for a comprehensive understanding of the topological properties of these two magnetic WSMs and further ARPES and STM measurements.
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Submitted 23 December, 2021; v1 submitted 30 December, 2017;
originally announced January 2018.
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From colossal to zero: Controlling the Anomalous Hall Effect in Magnetic Heusler Compounds via Berry Curvature Design
Authors:
Kaustuv Manna,
Lukas Muechler,
Ting-Hui Kao,
Rolf Stinshoff,
Yang Zhang,
Johannes Gooth,
Nitesh Kumar,
Guido Kreiner,
Klaus Koepernik,
Roberto Car,
Jürgen Kübler,
Gerhard H. Fecher,
Chandra Shekhar,
Yan Sun,
Claudia Felser
Abstract:
Since the discovery of the anomalous Hall effect (AHE), the anomalous Hall conductivity (AHC) has been thought to be zero when there is no net magnetization. However, the recently found relation between the intrinsic AHE and the Berry curvature predicts other possibilities, such as a large AHC in non-colinear antiferromagnets with no net magnetization but net Berry curvature. Vice versa, the AHE i…
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Since the discovery of the anomalous Hall effect (AHE), the anomalous Hall conductivity (AHC) has been thought to be zero when there is no net magnetization. However, the recently found relation between the intrinsic AHE and the Berry curvature predicts other possibilities, such as a large AHC in non-colinear antiferromagnets with no net magnetization but net Berry curvature. Vice versa, the AHE in principle could be tuned to zero, irrespective of a finite magnetization. Here, we experimentally investigate this possibility and demonstrate that, the symmetry elements of Heusler magnets can be changed such that the Berry curvature and all the associated properties are switched while leaving the magnetization unaffected. This enables us to tune the AHC from 0 Ω-1cm-1 up to 1600 Ω-1cm-1 with an exceptionally high anomalous Hall angle up to 12 %, while kee** the magnetization same. Our study shows that the AHC can be controlled by selectively changing the Berry curvature distribution, independent of the magnetization.
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Submitted 13 December, 2018; v1 submitted 29 December, 2017;
originally announced December 2017.
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Magnetic Weyl Semimetal in Quasi Two-dimensional Half Metallic Co$_3$Sn$_2$Se$_2$
Authors:
Qiunan Xu,
Enke Liu,
Wujun Shi,
Lukas Muechler,
Claudia Felser,
Yan Sun
Abstract:
We have found a ferromagnetic Weyl semimetal (WSM) in half metallic Co$_3$Sn$_2$Se$_2$. The three pairs of Weyl points near Fermi level (E$_F$) are derived from nodal lines gapped by spin-orbit coupling (SOC). Though the Weyl points are 0.11 eV above the charge neutral point, Fermi arc related states in the cleaved surface can range from E$_F$ -0.15 to E$_F$ +0.11 eV in energy space, due to the su…
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We have found a ferromagnetic Weyl semimetal (WSM) in half metallic Co$_3$Sn$_2$Se$_2$. The three pairs of Weyl points near Fermi level (E$_F$) are derived from nodal lines gapped by spin-orbit coupling (SOC). Though the Weyl points are 0.11 eV above the charge neutral point, Fermi arc related states in the cleaved surface can range from E$_F$ -0.15 to E$_F$ +0.11 eV in energy space, due to the surface bands dispersion. Hence, Weyl points related physics should be detected by surface measurements, such as ARPES and STM. Because of the large Berry curvature deriving from the gapped nodal lines and Weyl points, the anomalous Hall conductivity of Co$_3$Sn$_2$Se$_2$ can keep above 620 S/cm in a large energy window. Beside magnetic WSM, Co$_3$Sn$_2$Se$_2$ also possesses a Z$_2$ topological semimetal phase as the temperature is above Curie temperature. Owing to the quasi two-dimensional lattice structure, it is also possible to realize quantum anomalous Hall effect in its 2D limit via the size effect. Therefore, Co$_3$Sn$_2$Se$_2$ provides a good platform for the interplay of different topological states and magnetic states.
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Submitted 28 March, 2018; v1 submitted 24 December, 2017;
originally announced December 2017.
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Emerging chiral edge states from the confinement of a magnetic Weyl semimetal in Co$_3$Sn$_2$S$_2$
Authors:
Lukas Muechler,
Enke Liu,
Jacob Gayles,
Qiunan Xu,
Claudia Felser,
Yan Sun
Abstract:
The quantum anomalous Hall effect (QAHE) and magnetic Weyl semimetals (WSMs) are topological states induced by intrinsic magnetic moments and spin-orbit coupling. Their similarity suggests the possibility of achieving the QAHE by dimensional confinement of a magnetic WSM along one direction. In this study, we investigate the emergence of the QAHE in the two-dimensional (2D) limit of magnetic WSMs…
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The quantum anomalous Hall effect (QAHE) and magnetic Weyl semimetals (WSMs) are topological states induced by intrinsic magnetic moments and spin-orbit coupling. Their similarity suggests the possibility of achieving the QAHE by dimensional confinement of a magnetic WSM along one direction. In this study, we investigate the emergence of the QAHE in the two-dimensional (2D) limit of magnetic WSMs due to finite size effects in thin films and step-edges. We demonstrate the feasibility of this approach with effective models and real materials. To this end, we have chosen the layered magnetic WSM Co$_3$Sn$_2$S$_2$, which features a large anomalous Hall conductivity and anomalous Hall angle in its 3D bulk, as our material candidate. In the 2D limit of Co$_3$Sn$_2$S$_2$ two QAHE states exist depending on the stoichiometry of the 2D layer. One is a semimetal with a Chern number of 6, and the other is an insulator with a Chern number of 3. The latter has a band gap of 0.05 eV, which is much larger than that in magnetically doped topological insulators. Our findings naturally explain the existence of chiral states in step edges of bulk Co$_3$Sn$_2$S$_2$ which habe been reported in a recent experiment at $T = 4K$ and present a realistic avenue to realize QAH states in thin films of magnetic WSMs.
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Submitted 25 March, 2020; v1 submitted 21 December, 2017;
originally announced December 2017.
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Manifestation of the Berry curvature in Co2TiSn Heusler films
Authors:
Benedikt Ernst,
Roshnee Sahoo,
Yan Sun,
Jayita Nayak,
Lukas Muechler,
Ajaya K. Nayak,
Nitesh Kumar,
Anastasios Markou,
Gerhard H. Fecher,
Claudia Felser
Abstract:
Various Co2 based Heusler compounds are predicted to be Weyl materials. These systems with broken symmetry possess a large Berry curvature, and introduce exotic transport properties. The present study on epitaxially grown Co2TiSn films is an initial approach to understand and explore this possibility. The anomalous Hall effect in the well-ordered Co2TiSn films has been investigated both experiment…
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Various Co2 based Heusler compounds are predicted to be Weyl materials. These systems with broken symmetry possess a large Berry curvature, and introduce exotic transport properties. The present study on epitaxially grown Co2TiSn films is an initial approach to understand and explore this possibility. The anomalous Hall effect in the well-ordered Co2TiSn films has been investigated both experimentally and theoretically. The measured Hall conductivity is in good agreement to the calculated Berry curvature. Small deviations between them are due to the influence of skew scattering on the Hall effect. From theoretical point of view, the main contribution to the anomalous Hall effect originates from slightly gapped nodal lines, due to a symmetry reduction induced by the magnetization. It has been found that only part of the nodal lines contributed near to the anomalous Hall conductivity at a fixed Fermi energy which can be explained from a magnetic symmetry analysis. Furthermore, from hard x-ray photoelectron spectroscopy measurements, we establish the electronic structure in the film that is comparable to the theoretical density of states calculations. The present results provide deeper insight into the spintronics from the prospect of topology.
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Submitted 12 October, 2017;
originally announced October 2017.
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Surface floating 2D bands in layered nonsymmorphic semimetals: ZrSiS and related compounds
Authors:
Andreas Topp,
Raquel Queiroz,
Andreas Grüneis,
Lukas Müchler,
Andreas Rost,
Andrei Varykhalov,
Dmitry Marchenko,
Maxim Krivenkov,
Fanny Rodolakis,
Jessica McChesney,
Bettina V. Lotsch,
Leslie M. Schoop,
Christian R. Ast
Abstract:
In this work, we present a model of the surface states of nonsymmorphic semimetals. These are derived from surface mass terms that lift the high degeneracy imposed in the band structure by the nonsymmorphic bulk symmetries. Reflecting the reduced symmetry at the surface, the bulk bands are strongly modified. This leads to the creation of two-dimensional floating bands, which are distinct from Shoc…
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In this work, we present a model of the surface states of nonsymmorphic semimetals. These are derived from surface mass terms that lift the high degeneracy imposed in the band structure by the nonsymmorphic bulk symmetries. Reflecting the reduced symmetry at the surface, the bulk bands are strongly modified. This leads to the creation of two-dimensional floating bands, which are distinct from Shockley states, quantum well states or topologically protected surface states. We focus on the layered semimetal ZrSiS to clarify the origin of its surface states. We demonstrate an excellent agreement between DFT calculations and ARPES measurements and present an effective four-band model in which similar surface bands appear. Finally, we emphasize the role of the surface chemical potential by comparing the surface density of states in samples with and without potassium coating. Our findings can be extended to related compounds and generalized to other crystals with nonsymmorphic symmetries.
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Submitted 1 September, 2017;
originally announced September 2017.
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Tunable Weyl and Dirac states in the nonsymmorphic compound $\rm\mathbf{CeSbTe}$
Authors:
Leslie M. Schoop,
Andreas Topp,
Judith Lippmann,
Fabio Orlandi,
Lukas Muechler,
Maia G. Vergniory,
Yan Sun,
Andreas W. Rost,
Viola Duppel,
Maxim Krivenkov,
Shweta Sheoran,
Pascal Manuel,
Andrei Varykhalov,
Binghai Yan,
Reinhard K. Kremer,
Christian R. Ast,
Bettina V. Lotsch
Abstract:
Recent interest in topological semimetals has lead to the proposal of many new topological phases that can be realized in real materials. Next to Dirac and Weyl systems, these include more exotic phases based on manifold band degeneracies in the bulk electronic structure. The exotic states in topological semimetals are usually protected by some sort of crystal symmetry and the introduction of magn…
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Recent interest in topological semimetals has lead to the proposal of many new topological phases that can be realized in real materials. Next to Dirac and Weyl systems, these include more exotic phases based on manifold band degeneracies in the bulk electronic structure. The exotic states in topological semimetals are usually protected by some sort of crystal symmetry and the introduction of magnetic order can influence these states by breaking time reversal symmetry. Here we show that we can realize a rich variety of different topological semimetal states in a single material, $\rm CeSbTe$. This compound can exhibit different types of magnetic order that can be accessed easily by applying a small field. It allows, therefore, for tuning the electronic structure and can drive it through a manifold of topologically distinct phases, such as the first nonsymmorphic magnetic topological material with an eight-fold band crossing at a high symmetry point. Our experimental results are backed by a full magnetic group theory analysis and ab initio calculations. This discovery introduces a realistic and promising platform for studying the interplay of magnetism and topology.
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Submitted 11 July, 2017;
originally announced July 2017.
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Extremely high conductivity observed in the triple point topological metal MoP
Authors:
Nitesh Kumar,
Yan Sun,
Michael Nicklas,
Sarah J. Watzman,
Olga Young,
Inge Leermakers,
Jacob Hornung,
Johannes Klotz,
Johannes Gooth,
Kaustuv Manna,
Vicky Süß,
Satya N. Guin,
Tobias Förster,
Marcus Schmidt,
Lukas Muechler,
Binghai Yan,
Peter Werner,
Walter Schnelle,
Uli Zeitler,
Jochen Wosnitza,
Stuart S. P. Parkin,
Claudia Felser,
Chandra Shekhar
Abstract:
Weyl and Dirac fermions have created much attention in condensed matter physics and materials science. Recently, several additional distinct types of fermions have been predicted. Here, we report ultra-high electrical conductivity in MoP at low temperature, which has recently been established as a triple point Fermion material. Here we show that the electrical resistivity is 6 n-ohm cm at 2 K with…
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Weyl and Dirac fermions have created much attention in condensed matter physics and materials science. Recently, several additional distinct types of fermions have been predicted. Here, we report ultra-high electrical conductivity in MoP at low temperature, which has recently been established as a triple point Fermion material. Here we show that the electrical resistivity is 6 n-ohm cm at 2 K with a large mean free path of 11 microns. de Haas-van Alphen oscillations reveal spin splitting of the Fermi surfaces. In contrast to noble metals with similar conductivity and number of carriers, the magnetoresistance in MoP does not saturate up to 9 T at 2 K. Interestingly, the momentum relaxing time of the electrons is found to be more than 15 times larger than the quantum coherence time. This difference between the scattering scales shows that momentum conserving scattering dominates in MoP at low temperatures.
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Submitted 11 June, 2019; v1 submitted 10 March, 2017;
originally announced March 2017.
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Tilted Dirac Fermions
Authors:
Lukas Muechler,
Aris Alexandradinata,
Titus Neupert,
Roberto Car
Abstract:
We introduce the notion of a band-inverted, topological semimetal in two-dimensional nonsymmorphic crystals. This notion is materialized in the monolayers of MTe$_2$ (M $=$ W, Mo) if spin-orbit coupling is neglected. We characterize the Dirac band touching topologically by the Wilson loop of the non-Abelian Berry gauge field. An additional feature of the Dirac cone in monolayer MTe$_2$ is that it…
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We introduce the notion of a band-inverted, topological semimetal in two-dimensional nonsymmorphic crystals. This notion is materialized in the monolayers of MTe$_2$ (M $=$ W, Mo) if spin-orbit coupling is neglected. We characterize the Dirac band touching topologically by the Wilson loop of the non-Abelian Berry gauge field. An additional feature of the Dirac cone in monolayer MTe$_2$ is that it tilts over in a Lifshitz transition to produce electron and hole pockets, a type-II Dirac cone. These pockets, together with the pseudospin structure of the Dirac electrons, suggest a unified, topological explanation for the recently-reported, non-saturating magnetoresistance in WTe$_2$, as well as its circular dichroism in photoemission. We complement our analysis and first-principle bandstructure calculations with an $\textit{ab-initio}$-derived-derived tight-binding model for the WTe$_2$ monolayer.
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Submitted 16 May, 2016; v1 submitted 5 April, 2016;
originally announced April 2016.
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Fermionic Symmetry-Protected Topological Phase in a Two-Dimensional Hubbard Model
Authors:
Cheng-Chien Chen,
Lukas Muechler,
Roberto Car,
Titus Neupert,
Joseph Maciejko
Abstract:
We study the two-dimensional (2D) Hubbard model using exact diagonalization for spin-1/2 fermions on the triangular and honeycomb lattices decorated with a single hexagon per site. In certain parameter ranges, the Hubbard model maps to a quantum compass model on those lattices. On the triangular lattice, the compass model exhibits collinear stripe antiferromagnetism, implying $d$-density wave char…
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We study the two-dimensional (2D) Hubbard model using exact diagonalization for spin-1/2 fermions on the triangular and honeycomb lattices decorated with a single hexagon per site. In certain parameter ranges, the Hubbard model maps to a quantum compass model on those lattices. On the triangular lattice, the compass model exhibits collinear stripe antiferromagnetism, implying $d$-density wave charge order in the original Hubbard model. On the honeycomb lattice, the compass model has a unique, quantum disordered ground state that transforms nontrivially under lattice reflection. The ground state of the Hubbard model on the decorated honeycomb lattice is thus a 2D fermionic symmetry-protected topological phase. This state -- protected by time-reversal and reflection symmetries -- cannot be connected adiabatically to a free-fermion topological phase.
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Submitted 25 August, 2016; v1 submitted 10 March, 2016;
originally announced March 2016.
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A large new family of filled skutterudites stabilized by electron count
Authors:
Huixia Luo,
Jason W. Krizan,
Lukas Muechler,
Neel Haldolaarachchige,
Tomasz Klimczuk,
Weiwei Xie,
Michael K. Fuccillo,
Claudia Felser,
Robert J. Cava
Abstract:
Based on the interplay of theory and experiment, a large new family of filled group 9 (Co, Rh and Ir) skutterudites is designed and synthesized. The new materials fill the empty cages in the structures of the known binary CoSb3, RhSb3 and IrSb3 skutterudites with alkaline, alkaline earth, and rare earth atoms to create compounds of the type AyB4X12; A atoms fill the cages to a fraction y, B are th…
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Based on the interplay of theory and experiment, a large new family of filled group 9 (Co, Rh and Ir) skutterudites is designed and synthesized. The new materials fill the empty cages in the structures of the known binary CoSb3, RhSb3 and IrSb3 skutterudites with alkaline, alkaline earth, and rare earth atoms to create compounds of the type AyB4X12; A atoms fill the cages to a fraction y, B are the group 9 transition metals, and X is a mixture of electronegative main group elements chosen to achieve chemical stability by adjusting the electron counts to electron-precise values. Forty-three new compounds are reported, antimony-tin and phosphorous-silicon based, with 63 compositional variations presented. The new family of compounds is large and general. The results described here can be extended to the synthesis of hundreds of new group 9 filled skutterudites.
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Submitted 12 February, 2015; v1 submitted 10 February, 2015;
originally announced February 2015.
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3D Dirac semimetals: current materials, design principles and predictions of new materials
Authors:
Quinn D. Gibson,
Leslie M. Schoop,
Lukas Muechler,
Lilia S. Xie,
Maximillian Hirschberger,
Nai Phuan Ong,
Roberto Car,
Robert J. Cava
Abstract:
Design principles and novel predictions of new 3D Dirac semimetals are presented, along with the context of currently known materials. Current materials include those based on a topological to trivial phase transition, such as in TlBiSe$_{2-x}$S$_x$ and Hg$_{1-x}$Cd$_x$Te, Bi$_{1-x}$Sb$_x$, Bi$_{2-x}$In$_x$Se$_3$, and Pb$_{1-x}$Sn$_x$Se. Some more recently revealed materials, Na$_3$Bi and Cd$_3$As…
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Design principles and novel predictions of new 3D Dirac semimetals are presented, along with the context of currently known materials. Current materials include those based on a topological to trivial phase transition, such as in TlBiSe$_{2-x}$S$_x$ and Hg$_{1-x}$Cd$_x$Te, Bi$_{1-x}$Sb$_x$, Bi$_{2-x}$In$_x$Se$_3$, and Pb$_{1-x}$Sn$_x$Se. Some more recently revealed materials, Na$_3$Bi and Cd$_3$As$_2$, are 3D Dirac semimetals in their native composition. The different design principles presented each yield novel predictions for new candidates. For Case I, 3D Dirac semimetals based on charge balanced compounds, BaAgBi, SrAgBi, YbAuSb, PtBi$_2$ and SrSn$_2$As$_2$ are identified as candidates. For Case II, 3D Dirac semi-metals in analogy to graphene, BaGa$_2$ is identified as a candidate, and BaPt and Li$_2$Pt are discussed. For Case III, 3D Dirac semi-metals based on glide planes and screw axes, TlMo$_3$Te$_3$ and the AMo$_3$X$_3$ family in general (A=K, Na, In, Tl, X=Se,Te) as well as the Group IVb trihalides such as HfI$_3$ are identified as candidates. Finally we discuss conventional intermetallic compounds with Dirac cones, and identify Cr$_2$B as a potentially interesting material.
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Submitted 31 October, 2014;
originally announced November 2014.
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Möbius molecules and fragile Mott insulators
Authors:
Lukas Muechler,
Joseph Maciejko,
Titus Neupert,
Roberto Car
Abstract:
Motivated by the concept of Möbius aromatics in organic chemistry, we extend the recently introduced concept of fragile Mott insulators (FMI) to ring-shaped molecules with repulsive Hubbard interactions threaded by a half-quantum of magnetic flux ($hc/2e$). In this context, a FMI is the insulating ground state of a finite-size molecule that cannot be adiabatically connected to a single Slater dete…
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Motivated by the concept of Möbius aromatics in organic chemistry, we extend the recently introduced concept of fragile Mott insulators (FMI) to ring-shaped molecules with repulsive Hubbard interactions threaded by a half-quantum of magnetic flux ($hc/2e$). In this context, a FMI is the insulating ground state of a finite-size molecule that cannot be adiabatically connected to a single Slater determinant, i.e., to a band insulator, provided that time-reversal and lattice translation symmetries are preserved. Based on exact numerical diagonalization for finite Hubbard interaction strength $U$ and existing Bethe-ansatz studies of the one-dimensional Hubbard model in the large-$U$ limit, we establish a duality between Hubbard molecules with $4n$ and $4n+2$ sites, with $n$ integer. A molecule with $4n$ sites is an FMI in the absence of flux but becomes a band insulator in the presence of a half-quantum of flux, while a molecule with $4n+2$ sites is a band insulator in the absence of flux but becomes an FMI in the presence of a half-quantum of flux. Including next-nearest-neighbor-hop**s gives rise to new FMI states that belong to multidimensional irreducible representations of the molecular point group, giving rise to a rich phase diagram.
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Submitted 23 September, 2014;
originally announced September 2014.
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On the superconductivity of TiNCl and ZrNCl: A local bonding perspective
Authors:
Lukas Muechler,
Leslie M. Schoop,
Claudia Felser
Abstract:
We analyze the superconductors TiNCl and ZrNCl from a local bonding perspective. Although TiNCl crystallizes in an orthorhombic structure and ZrNCl crystallizes in a hexagonal structure, both compounds show significant structural similarities, for example that both consist of layered metal-Nitrogen networks. The local bonding in those two structures is very similar, giving rise to a dispersive con…
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We analyze the superconductors TiNCl and ZrNCl from a local bonding perspective. Although TiNCl crystallizes in an orthorhombic structure and ZrNCl crystallizes in a hexagonal structure, both compounds show significant structural similarities, for example that both consist of layered metal-Nitrogen networks. The local bonding in those two structures is very similar, giving rise to a dispersive conduction band mostly consisting of metal-d -states. Upon do** both compounds show structural changes, which lead to short metal-metal distances, indicating a bonding interaction that might be important for the appearance of superconductivity in these systems. We furthermore draw analogies to other superconductors that are close to a charge density wave instability around a d 1 -configuration and offer a different perspective on this class of superconductors, which show non-BCS-like superconductivity.
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Submitted 13 August, 2014;
originally announced August 2014.
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Crystal structure and electronic structure of CePt2In7
Authors:
T. Klimczuk,
O. Walter,
L. Müchler,
J. W. Krizan,
F. Kinnart,
R. J. Cava
Abstract:
We report a corrected crystal structure for the CePt2In7 superconductor, refined from single crystal x-ray diffraction data. The corrected crystal structure shows a different Pt-In stacking along the c-direction in this layered material than was previously reported. In addition, all the atomic sites are fully occupied with no evidence of atom site mixing, resolving a discrepancy between the observ…
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We report a corrected crystal structure for the CePt2In7 superconductor, refined from single crystal x-ray diffraction data. The corrected crystal structure shows a different Pt-In stacking along the c-direction in this layered material than was previously reported. In addition, all the atomic sites are fully occupied with no evidence of atom site mixing, resolving a discrepancy between the observed high resistivity ratio of the material and the atomic disorder present in the previous structural model The Ce-Pt distance and coordination is typical of that seen in all other reported Ce_nM_mIn_3n+2m compounds. Our band structure calculations based on the correct structure reveal three bands at the Fermi level that are more three dimensional than those previously proposed, and Density functional theory (DFT) calculations show that the new structure has a significantly lower energy.
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Submitted 6 August, 2014;
originally announced August 2014.
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Large resistivity change and phase transition in LiMnAs
Authors:
A. Beleanu,
J. Kiss,
G. Kreiner,
C. Köhler,
L. Müchler,
W. Schnelle,
U. Burkhardt,
S. Chadov,
S. Medvediev,
D. Ebke,
G. Cordier,
B. Albert,
A. Hoser,
F. Bernardi,
T. I. Larkin,
D. Pröpper,
A. V. Boris,
B. Keimer,
C. Felser
Abstract:
Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of two antiferromagnetic semiconductors AMnAs (A = Li, LaO), which are isostructural to the well-known LiFeAs and LaOFeAs superconductors. Here we present a comparison between the structural, magnetic, and electronic properties of LiMnAs, LaOM…
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Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of two antiferromagnetic semiconductors AMnAs (A = Li, LaO), which are isostructural to the well-known LiFeAs and LaOFeAs superconductors. Here we present a comparison between the structural, magnetic, and electronic properties of LiMnAs, LaOMnAs and related materials. Interestingly, both LiMnAs and LaOMnAs show a variation in resistivity with more than five orders of magnitude, making them particularly suitable for use in future electronic devices. From neutron and X-ray diffraction measurements on LiMnAs we have observed a magnetic phase transition corresponding to the Neel temperature of 373.8 K, and a structural transition from the tetragonal to the cubic phase at 768 K. These experimental results are supported by density functional theory (DFT) calculations.
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Submitted 1 August, 2013; v1 submitted 24 July, 2013;
originally announced July 2013.
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Superconductivity in the Cu(Ir1-xPtx)2Se4 Spinel
Authors:
Huixia Luo,
Tomasz Klimczuk,
Lukas Muechler,
Leslie Schoop,
Daigorou Hirai,
M. K. Fuccillo,
C. Felser,
R. J. Cava
Abstract:
We report the observation of superconductivity in the CuIr2Se4 spinel induced by partial substitution of Pt for Ir. The optimal do** level for superconductivity in Cu(Ir1-xPtx)2Se4 is x = 0.2, where Tc is 1.76 K. A superconducting Tc vs. composition dome is established between the metallic, normal conductor CuIr2Se4 and semiconducting CuIrPtSe4. Electronic structure calculations show that the op…
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We report the observation of superconductivity in the CuIr2Se4 spinel induced by partial substitution of Pt for Ir. The optimal do** level for superconductivity in Cu(Ir1-xPtx)2Se4 is x = 0.2, where Tc is 1.76 K. A superconducting Tc vs. composition dome is established between the metallic, normal conductor CuIr2Se4 and semiconducting CuIrPtSe4. Electronic structure calculations show that the optimal Tc occurs near the electron count of a large peak in the calculated electronic density of states and that CuIrPtSe4 is a band-filled insulator. Characterization of the superconducting state in this heavy metal spinel through determination of ΔC/γTc, indicates that it is BCS-like. The relatively high upper critical field at the optimal superconducting composition (Hc2(0) = 3.2 T) is much larger than that reported for analogous rhodium spinels and is comparable to or exceeds the Pauli field (mu0Hp), suggesting that strong spin orbit coupling may influence the superconducting state. Further, comparison to doped CuIr2S4 suggests that superconductivity in iridium spinels is not necessarily associated with the destabilization of a charge-ordered spin-paired state through do**.
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Submitted 15 May, 2013;
originally announced May 2013.
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Lone Pair Effect, Structural Distortions and Potential for Superconductivity in Tl Perovskites
Authors:
Leslie M. Schoop,
Lukas Müchler,
Claudia Felser,
R. J. Cava
Abstract:
Drawing the analogy to BaBiO3, we investigate via ab-initio electronic structure calculations potential new superconductors of the type ATlX3 with A = Rb, Cs and X = F, Cl, and Br, with a particular emphasis on RbTlCl3. Based on chemical reasoning, supported by the calculations, we show that Tl-based perovskites have structural and charge instabilities driven by the lone pair effect, similar to th…
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Drawing the analogy to BaBiO3, we investigate via ab-initio electronic structure calculations potential new superconductors of the type ATlX3 with A = Rb, Cs and X = F, Cl, and Br, with a particular emphasis on RbTlCl3. Based on chemical reasoning, supported by the calculations, we show that Tl-based perovskites have structural and charge instabilities driven by the lone pair effect, similar to the case of BaBiO3, effectively becoming A2Tl1+Tl3+X6. We find that upon hole do** of RbTlCl3, structures without Tl1+, Tl3+ charge disproportionation become more stable, although the ideal cubic perovskite, often viewed as the best host for superconductivity, should not be the most stable phase in the system. The known superconductor (Sr,K)BiO3 and hole doped RbTlCl3, predicted to be most stable in the same tetragonal structure, display highly analogous calculated electronic band structures.
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Submitted 7 February, 2013;
originally announced February 2013.
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Topological insulators and thermoelectric materials
Authors:
Lukas Müchler,
Frederick Casper,
Binghai Yan,
Stanislav Chadov,
Claudia Felser
Abstract:
Topological insulators (TIs) are a new quantum state of matter which have gapless surface states inside the bulk energy gap. Starting with the discovery of two dimensional TIs, the HgTe-based quantum wells, many new topological materials have been theoretically predicted and experimentally observed. Currently known TI materials can possibly be classified into two families, the HgTe family and the…
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Topological insulators (TIs) are a new quantum state of matter which have gapless surface states inside the bulk energy gap. Starting with the discovery of two dimensional TIs, the HgTe-based quantum wells, many new topological materials have been theoretically predicted and experimentally observed. Currently known TI materials can possibly be classified into two families, the HgTe family and the Bi2Se family. The signatures found in the electronic structure of a TI also cause these materials to be excellent thermoelectric materials. On the other hand, excellent thermoelectric materials can be also topologically trivial. Here we present a short introduction to topological insulators and thermoelectrics, and give examples of compound classes were both good thermoelectric properties and topological insulators can be found.
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Submitted 30 November, 2012; v1 submitted 26 September, 2012;
originally announced September 2012.
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Prediction of weak topological insulators in layered semiconductors
Authors:
Binghai Yan,
Lukas Muechler,
Claudia Felser
Abstract:
We report the discovery of weak topological insulators by ab initio calculations in a honeycomb lattice. We propose a structure with an odd number of layers in the primitive unit-cell as a prerequisite for forming weak topological insulators. Here, the single-layered KHgSb is the most suitable candidate for its large bulk energy gap of 0.24 eV. Its side surface hosts metallic surface states, formi…
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We report the discovery of weak topological insulators by ab initio calculations in a honeycomb lattice. We propose a structure with an odd number of layers in the primitive unit-cell as a prerequisite for forming weak topological insulators. Here, the single-layered KHgSb is the most suitable candidate for its large bulk energy gap of 0.24 eV. Its side surface hosts metallic surface states, forming two anisotropic Dirac cones. Though the stacking of even-layered structures leads to trivial insulators, the structures can host a quantum spin Hall layer with a large bulk gap, if an additional single layer exists as a stacking fault in the crystal. The reported honeycomb compounds can serve as prototypes to aid in the finding of new weak topological insulators in layered small-gap semiconductors.
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Submitted 20 June, 2012;
originally announced June 2012.
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Topological insulators in filled skutterudites
Authors:
Binghai Yan,
Lukas Müchler,
Xiao-Liang Qi,
Shou-Cheng Zhang,
Claudia Felser
Abstract:
We propose new topological insulators in cerium filled skutterudite (FS) compounds based on ab initio calculations. We find that two compounds CeOs4As12 and CeOs4Sb12 are zero gap materials with band inversion between Os-d and Ce-f orbitals, which are thus parent compounds of two and three-dimensional topological insulators just like bulk HgTe. At low temperature, both compounds become topological…
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We propose new topological insulators in cerium filled skutterudite (FS) compounds based on ab initio calculations. We find that two compounds CeOs4As12 and CeOs4Sb12 are zero gap materials with band inversion between Os-d and Ce-f orbitals, which are thus parent compounds of two and three-dimensional topological insulators just like bulk HgTe. At low temperature, both compounds become topological Kondo insulators, which are Kondo insulators in the bulk, but have robust Dirac surface states on the boundary. This new family of topological insulators has two advantages compared to previous ones. First, they can have good proximity effect with other superconducting FS compounds to realize Majarona fermions. Second, the antiferromagnetism of CeOs4Sb12 at low temperature provides a way to realize the massive Dirac fermion with novel topological phenomena.
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Submitted 1 April, 2011;
originally announced April 2011.
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Topological Insulators in Ternary Compounds with a Honeycomb Lattice
Authors:
Hai-Jun Zhang,
Stanislav Chadov,
Lukas Müchler,
Binghai Yan,
Xiao-Liang Qi,
Jürgen Kübler,
Shou-Cheng Zhang,
Claudia Felser
Abstract:
One of the most exciting subjects in solid state physics is a single layer of graphite which exhibits a variety of unconventional novel properties. The key feature of its electronic structure are linear dispersive bands which cross in a single point at the Fermi energy. This so-called Dirac cone is closely related to the surface states of the recently discovered topological insulators. The ternary…
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One of the most exciting subjects in solid state physics is a single layer of graphite which exhibits a variety of unconventional novel properties. The key feature of its electronic structure are linear dispersive bands which cross in a single point at the Fermi energy. This so-called Dirac cone is closely related to the surface states of the recently discovered topological insulators. The ternary compounds, such as LiAuSe and KHgSb with a honeycomb structure of their Au-Se and Hg-Sb layers feature band inversion very similar to HgTe which is a strong precondition for existence of the topological surface states. In contrast to graphene with two Dirac cones at K and K' points, these materials exhibit the surface states formed by only a single Dirac cone at the Γ-point together with the small direct band gap opened by a strong spin-orbit coupling (SOC) in the bulk. These materials are centro-symmetric, therefore, it is possible to determine the parity of their wave functions, and hence, their topological character. Surprisingly, the compound KHgSb with the strong SOC is topologically trivial, whereas LiAuSe is found to be a topological non-trivial insulator.
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Submitted 11 October, 2010;
originally announced October 2010.