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Computing Non-Repetitive Sequences with a Computable Lefthanded Local Lemma
Authors:
Daniel Mourad
Abstract:
The lefthanded Lovász local lemma (LLLL) is a generalization of the Lovász local lemma (LLL), a powerful technique from the probabilistic method. We prove a computable version of the LLLL and use it to effectivize a collection of results on the existence of certain types of non-repetitive sequences via the LLL and LLLL. This represents the first constructive proof of these results.
The lefthanded Lovász local lemma (LLLL) is a generalization of the Lovász local lemma (LLL), a powerful technique from the probabilistic method. We prove a computable version of the LLLL and use it to effectivize a collection of results on the existence of certain types of non-repetitive sequences via the LLL and LLLL. This represents the first constructive proof of these results.
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Submitted 18 June, 2024; v1 submitted 15 June, 2024;
originally announced June 2024.
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There is No Composition in the Computable Reducibility Degrees
Authors:
Daniel Mourad
Abstract:
We show that, in general, there is no degree corresponding to the composition of two problems in the computable reducibility lattice.
We show that, in general, there is no degree corresponding to the composition of two problems in the computable reducibility lattice.
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Submitted 24 May, 2024;
originally announced May 2024.
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Synthetic Brain Images: Bridging the Gap in Brain Map** With Generative Adversarial Model
Authors:
Drici Mourad,
Kazeem Oluwakemi Oseni
Abstract:
Magnetic Resonance Imaging (MRI) is a vital modality for gaining precise anatomical information, and it plays a significant role in medical imaging for diagnosis and therapy planning. Image synthesis problems have seen a revolution in recent years due to the introduction of deep learning techniques, specifically Generative Adversarial Networks (GANs). This work investigates the use of Deep Convolu…
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Magnetic Resonance Imaging (MRI) is a vital modality for gaining precise anatomical information, and it plays a significant role in medical imaging for diagnosis and therapy planning. Image synthesis problems have seen a revolution in recent years due to the introduction of deep learning techniques, specifically Generative Adversarial Networks (GANs). This work investigates the use of Deep Convolutional Generative Adversarial Networks (DCGAN) for producing high-fidelity and realistic MRI image slices. The suggested approach uses a dataset with a variety of brain MRI scans to train a DCGAN architecture. While the discriminator network discerns between created and real slices, the generator network learns to synthesise realistic MRI image slices. The generator refines its capacity to generate slices that closely mimic real MRI data through an adversarial training approach. The outcomes demonstrate that the DCGAN promise for a range of uses in medical imaging research, since they show that it can effectively produce MRI image slices if we train them for a consequent number of epochs. This work adds to the expanding corpus of research on the application of deep learning techniques for medical image synthesis. The slices that are could be produced possess the capability to enhance datasets, provide data augmentation in the training of deep learning models, as well as a number of functions are made available to make MRI data cleaning easier, and a three ready to use and clean dataset on the major anatomical plans.
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Submitted 11 April, 2024;
originally announced April 2024.
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Non-invasive control of excitons in two-dimensional materials
Authors:
Christina Steinke,
Daniel Mourad,
Malte Rösner,
Michael Lorke,
Christopher Gies,
Frank Jahnke,
Gerd Czycholl,
Tim O. Wehling
Abstract:
We investigate how external screening shapes excitons in two-dimensional (2d) semiconductors embedded in laterally structured dielectric environments. An atomic scale view of these elementary excitations is developed using models which apply to a variety of materials including transition metal dichalcogenides (TMDCs). We find that structured dielectrics imprint a peculiar potential energy landscap…
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We investigate how external screening shapes excitons in two-dimensional (2d) semiconductors embedded in laterally structured dielectric environments. An atomic scale view of these elementary excitations is developed using models which apply to a variety of materials including transition metal dichalcogenides (TMDCs). We find that structured dielectrics imprint a peculiar potential energy landscape on excitons in these systems: While the ground-state exciton is least influenced, higher excitations are attracted towards regions with high dielectric constant of the environment. This landscape is "inverted" in the sense that low energy excitons are less strongly affected than their higher energy counterparts. Corresponding energy variations emerge on length scales of the order of a few unit cells. This opens the prospect of trap** and guiding of higher excitons by means of tailor-made dielectric substrates on ultimately small spatial scales.
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Submitted 20 April, 2017;
originally announced April 2017.
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Structure-Related Optical Fingerprints in the Absorption Spectra of Colloidal Quantum Dots: Random Alloy vs. Core/Shell Systems
Authors:
Daniel Mourad
Abstract:
We argue that the experimentally easily accessible optical absorption spectrum can often be used to distinguish between a random alloy phase and a stoichiometrically equivalent core/shell realization of ensembles of monodisperse colloidal semiconductor quantum dots without the need for more advanced structural characterization tools. Our proof-of-concept is performed by conceptually straightforwar…
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We argue that the experimentally easily accessible optical absorption spectrum can often be used to distinguish between a random alloy phase and a stoichiometrically equivalent core/shell realization of ensembles of monodisperse colloidal semiconductor quantum dots without the need for more advanced structural characterization tools. Our proof-of-concept is performed by conceptually straightforward exact-disorder tight-binding calculations. The underlying stochastical tight-binding scheme only parametrizes bulk band structure properties and does not employ additional free parameters to calculate the optical absorption spectrum, which is an easily accessible experimental property. The method is applied to selected realizations of type-I Cd(Se,S) and type-II (Zn,Cd)(Se,S) alloyed quantum dots with an underlying zincblende crystal structure and the corresponding core/shell counterparts.
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Submitted 19 December, 2016; v1 submitted 4 November, 2016;
originally announced November 2016.
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Computational and in vitro studies of blast-induced blood-brain barrier disruption
Authors:
Mauricio J. Del Razo,
Yoichi Morofuji,
James S. Meabon,
B. Russell Huber,
Elaine R. Peskind,
William A. Banks,
Pierre D. Mourad,
Randall J. Leveque,
David G. Cook
Abstract:
There is growing concern that blast-exposed individuals are at risk of develo** neurological disorders later in life. Therefore, it is important to understand the dynamic properties of blast forces on brain cells, including the endothelial cells that maintain the blood-brain barrier (BBB), which regulates the passage of nutrients into the brain and protects it from toxins in the blood. To better…
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There is growing concern that blast-exposed individuals are at risk of develo** neurological disorders later in life. Therefore, it is important to understand the dynamic properties of blast forces on brain cells, including the endothelial cells that maintain the blood-brain barrier (BBB), which regulates the passage of nutrients into the brain and protects it from toxins in the blood. To better understand the effect of shock waves on the BBB we have investigated an {\em in vitro} model in which BBB endothelial cells are grown in transwell vessels and exposed in a shock tube, confirming that BBB integrity is directly related to shock wave intensity. It is difficult to directly measure the forces acting on these cells in the transwell container during the experiments, and so a computational tool has been developed and presented in this paper.
Two-dimensional axisymmetric Euler equations with the Tammann equation of state were used to model the transwell materials, and a high-resolution finite volume method based on Riemann solvers and the Clawpack software was used to solve these equations in a mixed Eulerian/Lagrangian frame. Results indicated that the geometry of the transwell plays a significant role in the observed pressure time series in these experiments. We also found that pressures can fall below vapor pressure due to the interaction of reflecting and diffracting shock waves, suggesting that cavitation bubbles could be a damage mechanism. Computations that include a simulated hydrophone inserted in the transwell suggest that the instrument itself could significantly alter blast wave properties. These findings illustrate the need for further computational modeling studies aimed at understanding possible blast-induced BBB damage.
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Submitted 17 December, 2015; v1 submitted 31 March, 2015;
originally announced March 2015.
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Determination of the Fermi Level Position in Dilute Magnetic Ga$_{1-x}$Mn$_{x}$N Films
Authors:
Stefan Barthel,
Gerd Kunert,
Mariuca Gartner,
Mihai Stoica,
Daniel Mourad,
Carsten Kruse,
Stephan Figge,
Detlef Hommel,
Gerd Czycholl
Abstract:
We report on a combined theoretical and experimental determination of the Fermi level position in wurtzite Ga$_{1-x}$Mn$_{x}$N films with $x=4\%$ and $x=10\%$ as grown by molecular beam epitaxy. By means of ellipsometric measurements the real part of the frequency-dependent conductivity is determined. An electronic model in the framework of the effective bond-orbital model is parameterized in orde…
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We report on a combined theoretical and experimental determination of the Fermi level position in wurtzite Ga$_{1-x}$Mn$_{x}$N films with $x=4\%$ and $x=10\%$ as grown by molecular beam epitaxy. By means of ellipsometric measurements the real part of the frequency-dependent conductivity is determined. An electronic model in the framework of the effective bond-orbital model is parameterized in order to theoretically reproduce the measured transport properties. Predictions for the long-wavelength behaviour as a function of the Fermi level are made. The corresponding density of states obtained in this model is in qualitative agreement with first-principle calculations. The absence of a significant experimental peak in the AC conductivity for small frequencies indicates that the Fermi level lies in a gap between two Mn-related impurity bands in the host band gap.
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Submitted 12 March, 2014; v1 submitted 27 January, 2014;
originally announced January 2014.
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Tight-binding branch-point energies and band offsets for cubic InN, GaN, AlN and AlGaN alloys
Authors:
Daniel Mourad
Abstract:
Starting with empirical tight-binding band structures, the branch-point (BP) energies and resulting valence band offsets (VBOs) for the zincblende phase of InN, GaN and AlN are calculated from their k-averaged midgap energy. Furthermore, the directional dependence of the BPs of GaN and AlN is discussed using the Green's function method of Tersoff. We then show how to obtain the BPs for binary semi…
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Starting with empirical tight-binding band structures, the branch-point (BP) energies and resulting valence band offsets (VBOs) for the zincblende phase of InN, GaN and AlN are calculated from their k-averaged midgap energy. Furthermore, the directional dependence of the BPs of GaN and AlN is discussed using the Green's function method of Tersoff. We then show how to obtain the BPs for binary semiconductor alloys within a band-diagonal representation of the coherent potential approximation (CPA) and apply this method to cubic AlGaN alloys. The resulting band offsets show good agreement to available experimental and theoretical data from the literature. Our results can be used to determine the band alignment in isovalent heterostructures involving pure cubic III-nitrides or AlGaN alloys for arbitrary concentrations.
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Submitted 7 February, 2013;
originally announced February 2013.
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Determination of the valence band offset at cubic CdSe/ZnTe type II heterojunctions: A combined experimental and theoretical approach
Authors:
Daniel Mourad,
Jan-Peter Richters,
Lionel Gérard,
Régis André,
Joël Bleuse,
Henri Mariette
Abstract:
We present a combined experimental and theoretical approach for the determination of the low-temperature valence band offset (VBO) at CdSe/ZnTe heterojunctions with underlying zincblende crystal structure. On the experimental side, the optical transition of the type II interface allows for a precise measurement of the type II band gap. We show how the excitation-power dependent shift of this photo…
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We present a combined experimental and theoretical approach for the determination of the low-temperature valence band offset (VBO) at CdSe/ZnTe heterojunctions with underlying zincblende crystal structure. On the experimental side, the optical transition of the type II interface allows for a precise measurement of the type II band gap. We show how the excitation-power dependent shift of this photoluminescence (PL) signal can be used for any type II system for a precise determination of the VBO. On the theoretical side, we use a refined empirical tight-binding parametrization in order to accurately reproduce the band structure and density of states around the band gap region of cubic CdSe and ZnTe and then calculate the branch point energy (also known as charge neutrality level) for both materials. Because of the cubic crystal structure and the small lattice mismatch across the interface, the VBO for the material system under consideration can then be obtained from a charge neutrality condition, in good agreement with the PL measurements.
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Submitted 30 October, 2012; v1 submitted 10 August, 2012;
originally announced August 2012.
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Theory of band gap bowing of disordered substitutional II-VI and III-V semiconductor alloys
Authors:
Daniel Mourad,
Gerd Czycholl
Abstract:
For a wide class of technologically relevant compound III-V and II-VI semiconductor materials AC and BC mixed crystals (alloys) of the type A(x)B(1-x)C can be realized. As the electronic properties like the bulk band gap vary continuously with x, any band gap in between that of the pure AC and BC systems can be obtained by choosing the appropriate concentration x, granted that the respective ratio…
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For a wide class of technologically relevant compound III-V and II-VI semiconductor materials AC and BC mixed crystals (alloys) of the type A(x)B(1-x)C can be realized. As the electronic properties like the bulk band gap vary continuously with x, any band gap in between that of the pure AC and BC systems can be obtained by choosing the appropriate concentration x, granted that the respective ratio is miscible and thermodynamically stable. In most cases the band gap does not vary linearly with x, but a pronounced bowing behavior as a function of the concentration is observed. In this paper we show that the electronic properties of such A(x)B(1-x)C semiconductors and, in particular, the band gap bowing can well be described and understood starting from empirical tight binding models for the pure AC and BC systems. The electronic properties of the A(x)B(1-x)C system can be described by choosing the tight-binding parameters of the AC or BC system with probabilities x and 1-x, respectively. We demonstrate this by exact diagonalization of finite but large supercells and by means of calculations within the established coherent potential approximation (CPA). We apply this treatment to the II-VI system Cd(x)Zn(1-x)Se, to the III-V system In(x)Ga(1-x)As and to the III-nitride system Ga(x)Al(1-x)N.
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Submitted 20 February, 2012; v1 submitted 22 December, 2011;
originally announced December 2011.
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Multiband tight-binding theory of disordered ABC semiconductor quantum dots: Application to the optical properties of alloyed CdZnSe nanocrystals
Authors:
Daniel Mourad,
Gerd Czycholl
Abstract:
Zero-dimensional nanocrystals, as obtained by chemical synthesis, offer a broad range of applications, as their spectrum and thus their excitation gap can be tailored by variation of their size. Additionally, nanocrystals of the type ABC can be realized by alloying of two pure compound semiconductor materials AC and BC, which allows for a continuous tuning of their absorption and emission spectrum…
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Zero-dimensional nanocrystals, as obtained by chemical synthesis, offer a broad range of applications, as their spectrum and thus their excitation gap can be tailored by variation of their size. Additionally, nanocrystals of the type ABC can be realized by alloying of two pure compound semiconductor materials AC and BC, which allows for a continuous tuning of their absorption and emission spectrum with the concentration x. We use the single-particle energies and wave functions calculated from a multiband sp^3 empirical tight-binding model in combination with the configuration interaction scheme to calculate the optical properties of CdZnSe nanocrystals with a spherical shape. In contrast to common mean-field approaches like the virtual crystal approximation (VCA), we treat the disorder on a microscopic level by taking into account a finite number of realizations for each size and concentration. We then compare the results for the optical properties with recent experimental data and calculate the optical bowing coefficient for further sizes.
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Submitted 6 October, 2010;
originally announced October 2010.
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Band gap bowing of binary alloys: Experimental results compared to theoretical tight-binding supercell calculations for CdZnSe
Authors:
Daniel Mourad,
Carsten Kruse,
Sebastian Klembt,
Reiner Retzlaff,
Mariuca Gartner,
Mihai Anastasescu,
Detlef Hommel,
Gerd Czycholl
Abstract:
Compound semiconductor alloys of the type ABC find widespread applications as their electronic bulk band gap varies continuously with x, and therefore a tayloring of the energy gap is possible by variation of the concentration. We model the electronic properties of such semiconductor alloys by a multiband tight-binding model on a finite ensemble of supercells and determine the band gap of the allo…
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Compound semiconductor alloys of the type ABC find widespread applications as their electronic bulk band gap varies continuously with x, and therefore a tayloring of the energy gap is possible by variation of the concentration. We model the electronic properties of such semiconductor alloys by a multiband tight-binding model on a finite ensemble of supercells and determine the band gap of the alloy. This treatment allows for an intrinsic reproduction of band bowing effects as a function of the concentration x and is exact in the alloy-induced disorder. In the present paper, we concentrate on bulk CdZnSe as a well-defined model system and give a careful analysis on the proper choice of the basis set and supercell size, as well as on the necessary number of realizations. The results are compared to experimental results obtained from ellipsometric measurements of CdZnSe layers prepared by molecular beam epitaxy (MBE) and photoluminescence (PL) measurements on catalytically grown CdZnSe nanowires reported in the literature.
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Submitted 18 August, 2010; v1 submitted 14 July, 2010;
originally announced July 2010.
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Multiband effective bond-orbital model for nitride semiconductors with wurtzite structure
Authors:
Daniel Mourad,
Stefan Barthel,
Gerd Czycholl
Abstract:
A multiband empirical tight-binding model for group-III-nitride semiconductors with a wurtzite structure has been developed and applied to both bulk systems and embedded quantum dots. As a minimal basis set we assume one s-orbital and three p-orbitals, localized in the unit cell of the hexagonal Bravais lattice, from which one conduction band and three valence bands are formed. Non-vanishing mat…
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A multiband empirical tight-binding model for group-III-nitride semiconductors with a wurtzite structure has been developed and applied to both bulk systems and embedded quantum dots. As a minimal basis set we assume one s-orbital and three p-orbitals, localized in the unit cell of the hexagonal Bravais lattice, from which one conduction band and three valence bands are formed. Non-vanishing matrix elements up to second nearest neighbors are taken into account. These matrix elements are determined so that the resulting tight-binding band structure reproduces the known Gamma-point parameters, which are also used in recent kp-treatments. Furthermore, the tight-binding band structure can also be fitted to the band energies at other special symmetry points of the Brillouin zone boundary, known from experiment or from first-principle calculations. In this paper, we describe details of the parametrization and present the resulting tight-binding band structures of bulk GaN, AlN, and InN with a wurtzite structure. As a first application to nanostructures, we present results for the single-particle electronic properties of lens-shaped InN quantum dots embedded in a GaN matrix.
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Submitted 19 April, 2010; v1 submitted 21 January, 2010;
originally announced January 2010.
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A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots
Authors:
Oliver Marquardt,
Daniel Mourad,
Stefan Schulz,
Tilmann Hickel,
Gerd Czycholl,
Jörg Neugebauer
Abstract:
In this work we present a comparison of multiband k.p-models, the effective bond-orbital approach, and an empirical tight-binding model to calculate the electronic structure for the example of a truncated pyramidal GaN/AlN self-assembled quantum dot with a zincblende structure. For the system under consideration, we find a very good agreement between the results of the microscopic models and the…
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In this work we present a comparison of multiband k.p-models, the effective bond-orbital approach, and an empirical tight-binding model to calculate the electronic structure for the example of a truncated pyramidal GaN/AlN self-assembled quantum dot with a zincblende structure. For the system under consideration, we find a very good agreement between the results of the microscopic models and the 8-band k.p-formalism, in contrast to a 6+2-band k.p-model, where conduction band and valence band are assumed to be decoupled. This indicates a surprisingly strong coupling between conduction and valence band states for the wide band gap materials GaN and AlN. Special attention is paid to the possible influence of the weak spin-orbit coupling on the localized single-particle wave functions of the investigated structure.
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Submitted 10 November, 2008;
originally announced November 2008.
