Showing 1–17 of 17 results for author: Motapothula, M

Enhanced metal-insulator transition in freestanding VO2 down to 5 nm thickness

Authors: Kun Han, Liang Wu, Yu Cao, Hanyu Wang, Chen Ye, Ke Huang, M. Motapothula, Hongna Xing, Xinghua Li, Dong-Chen Qi, Xiao Li, X. Renshaw Wang

Abstract: Ultrathin freestanding membranes with a pronounced metal-insulator transition (MIT) provides huge potential in future flexible electronic applications as well as a unique aspect of the study of lattice-electron interplay. However, the reduction of the thickness to an ultrathin region (a few nm) is typically detrimental to the MIT in epitaxial films, and even catastrophic for their freestanding for… ▽ More Ultrathin freestanding membranes with a pronounced metal-insulator transition (MIT) provides huge potential in future flexible electronic applications as well as a unique aspect of the study of lattice-electron interplay. However, the reduction of the thickness to an ultrathin region (a few nm) is typically detrimental to the MIT in epitaxial films, and even catastrophic for their freestanding form. Here, we report an enhanced MIT in VO2-based freestanding membranes, with a lateral size up to millimetres and VO2 thickness down to 5 nm. The VO2-membranes were detached by dissolving a Sr3Al2O6 sacrificial layer between the VO2 thin film and c-Al2O3(0001) substrate, allowing a transfer onto arbitrary surfaces. Furthermore, the MIT in the VO2-membrane was greatly enhanced by inserting an intermediate Al2O3 buffer layer. In comparison to the best available ultrathin VO2-membranes, the enhancement of MIT is over 400% at 5 nm VO2 thickness and more than one order of magnitude for VO2 above 10 nm. Our study widens the spectrum of functionality in ultrathin and large-scale membranes, and enables the potential integration of MIT into flexible electronics and photonics. △ Less

Submitted 30 April, 2021; originally announced May 2021.

Transmission Helium Ion Microscopy of Graphene

Authors: Karen L. Kavanagh, Aleksei Bunevich, Mallikarjuna Rao Motapothula

Abstract: We compare transmission He ion microscopy (HIM) to transmission electron microscopy (TEM) of graphene support films. We present spot transmission patterns that compare with scattering and range of ions in materials (SRIM) predictions, and show examples of scanning He$^+$ transmission images, based on integrated camera intensity. We also consider the potential for coherent HIM scattering. We compare transmission He ion microscopy (HIM) to transmission electron microscopy (TEM) of graphene support films. We present spot transmission patterns that compare with scattering and range of ions in materials (SRIM) predictions, and show examples of scanning He$^+$ transmission images, based on integrated camera intensity. We also consider the potential for coherent HIM scattering. △ Less

Submitted 3 April, 2020; originally announced April 2020.

Comments: Draft of a conference proceedings paper: Ion Beam Analysis 2019 - to be published in Nucleation Instruments and Methods in Physics Research. Section B, Beam interactions with materials and atoms

Tailoring magnetic order via atomically stacking 3d/5d electrons

Authors: Ke Huang, Liang Wu, Maoyu Wang, Nyayabanta Swain, M. Motapothula, Yongzheng Luo, Kun Han, Mingfeng Chen, Chen Ye, Allen Jian Yang, Huan Xu, Dong-chen Qi, Alpha T. N'Diaye, Christos Panagopoulos, Daniel Primetzhofer, Lei Shen, Pinaki Sengupta, **g Ma, Zhenxing Feng, Ce-Wen Nan, X. Renshaw Wang

Abstract: The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired in order to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar… ▽ More The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired in order to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir (5d) oxides exhibit rich magnetic behaviors and strong spin-orbit coupling through the entanglement of their 3d and 5d electrons. Through magnetization and magnetotransport measurements, we found that the magnetic order is interface-dominated as the superlattice period is decreased. We were able to then effectively modify the magnetization, tilt of the ferromagnetic easy axis, and symmetry transition of the anisotropic magnetoresistance of the LaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d) interfaces. Further investigations using in-depth first-principles calculations and numerical simulations revealed that these magnetic behaviors could be understood by the 3d/5d electron correlation and Rashba spin-orbit coupling. The results reported here demonstrate a new route to synchronously engineer magnetic properties through the atomic stacking of different electrons, contributing to future applications. △ Less

Submitted 14 September, 2021; v1 submitted 16 January, 2020; originally announced January 2020.

Journal ref: Applied Physics Reviews 7, 011401 (2020)

Large polaron evolution in anatase TiO2 due to carrier and temperature dependence of electron-phonon coupling

Authors: B. X. Yan, D. Y. Wan, X. Chi, C. J. Li, M. R. Motapothula, S. Hooda, P. Yang, Z. Huang, S. W. Zeng, A. Gadekar, S. J. Pennycook, A. Rusydi, Ariando, J. Martin, T. Venkatesan

Abstract: The electronic and magneto transport properties of reduced anatase TiO2 epitaxial thin films are analyzed considering various polaronic effects. Unexpectedly, with increasing carrier concentration, the mobility increases, which rarely happens in common metallic systems. We find that the screening of the electron-phonon (e-ph) coupling by excess carriers is necessary to explain this unusual depende… ▽ More The electronic and magneto transport properties of reduced anatase TiO2 epitaxial thin films are analyzed considering various polaronic effects. Unexpectedly, with increasing carrier concentration, the mobility increases, which rarely happens in common metallic systems. We find that the screening of the electron-phonon (e-ph) coupling by excess carriers is necessary to explain this unusual dependence. We also find that the magnetoresistance (MR) could be decomposed into a linear and a quadratic component, separately characterizing the transport and trap behavior of carriers as a function of temperature. The various transport behaviors could be organized into a single phase diagram which clarifies the nature of large polaron in this material. △ Less

Submitted 5 March, 2023; v1 submitted 11 November, 2017; originally announced November 2017.

Room Temperature Giant Charge-to-Spin Conversion at SrTiO3/LaAlO3 Oxide Interface

Authors: Yi Wang, Rajagopalan Ramaswamy, M. Motapothula, Kulothungasagaran Narayanapillai, Dapeng Zhu, Jiawei Yu, T. Venkatesan, Hyunsoo Yang

Abstract: Two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e. spin-to-charge conversion) in the 2DEG layer is reported. However, the direct effect of charge-to-spin conversion, an essential ingredient for spintronic devices in a current induced… ▽ More Two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e. spin-to-charge conversion) in the 2DEG layer is reported. However, the direct effect of charge-to-spin conversion, an essential ingredient for spintronic devices in a current induced spin-orbit torque scheme, has not been demonstrated yet. Here we show, for the first time, a highly efficient spin generation with the efficiency of ~6.3 in the STO/LAO/CoFeB structure at room temperature by using spin torque ferromagnetic resonance. In addition, we suggest that the spin transmission through the LAO layer at high temperature range is attributed to the inelastic tunneling via localized states in the LAO band gap. Our findings may lead to potential applications in the oxide insulator based spintronic devices. △ Less

Submitted 9 November, 2017; originally announced November 2017.

Comments: 16 pages, 4 figures

Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures

Authors: Zuhuang Chen, Zhanghui Chen, Z. Q. Liu, M. E. Holtz, C. J. Li, X. Renshaw Wang, W. M. Lv, M. Motapothula, L. S. Fan, J. A. Turcaud, L. R. Dedon, C. Frederick, R. J. Xu, R. Gao, A. T. NDiaye, E. Arenholz, J. A. Mundy, T. Venkatesan, D. A. Muller, L. -W. Wang, J. Liu, L. W. Martin

Abstract: Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO3/SrTiO3 (001) heterostructures. Using a combination of element-specific X-ray absorption spectroscopy an… ▽ More Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO3/SrTiO3 (001) heterostructures. Using a combination of element-specific X-ray absorption spectroscopy and dichroism, and first-principles calculations, interfacial electron accumulation and ferromagnetism have been observed within the polar, antiferromagnetic insulator LaMnO3. Our results show that the critical thickness for the onset of electron accumulation is as thin as 2 unit cells (UC), significantly thinner than the observed critical thickness for ferromagnetism of 5 UC. The absence of ferromagnetism below 5 UC is likely induced by electron over-accumulation. In turn, by controlling the do** of the LaMnO3, we are able to neutralize the excessive electrons from the polar mismatch in ultrathin LaMnO3 films and thus enable ferromagnetism in films as thin as 3 UC, extending the limits of our ability to synthesize and tailor emergent phenomena at interfaces and demonstrating manipulation of the electronic and magnetic structures of materials at the shortest length scales. △ Less

Submitted 6 September, 2017; originally announced September 2017.

Comments: Accepted by Phys. Rev. Lett

A study of small impact parameter ion channeling effects in thin crystals

Authors: M. Motapothula, M. B. H. Breese

Abstract: We have recorded channeling patterns produced by 1 to 2 MeV protons aligned with <111> axes in 55 nm thick silicon crystals which exhibit characteristic angular structure for deflection angles up to and beyond the axial critical angle, psi(a). Such large angular deflections are produced by ions incident on atomic strings with small impact parameters, resulting in trajectories which pass through se… ▽ More We have recorded channeling patterns produced by 1 to 2 MeV protons aligned with <111> axes in 55 nm thick silicon crystals which exhibit characteristic angular structure for deflection angles up to and beyond the axial critical angle, psi(a). Such large angular deflections are produced by ions incident on atomic strings with small impact parameters, resulting in trajectories which pass through several radial rings of atomic strings before exiting the thin crystal. Each ring may focus, steer or scatter the channeled ions in the transverse direction and the resulting characteristic angular structure beyond 0.6psi(a) at different depths can be related to peaks and troughs in the nuclear encounter probability. Such radial focusing underlies other axial channeling phenomena in thin crystals including planar channeling of small impact parameter trajectories, peaks around the azimuthal distribution at small tilts and large shoulders in the nuclear encounter probability at tilts beyond psi(a). △ Less

Submitted 17 August, 2017; originally announced August 2017.

Comments: 19 pages, 12 figures, submitted to The European Physical Journal C(under review)

Experimental study of extrinsic spin Hall effect in CuPt alloy

Authors: Rajagopalan Ramaswamy, Yi Wang, Mehrdad Elyasi, M. Motapothula, T. Venkatesan, Xuepeng Qiu, Hyunsoo Yang

Abstract: We have experimentally studied the effects on the spin Hall angle due to systematic addition of Pt into the light metal Cu. We perform spin torque ferromagnetic resonance measurements on Py/CuPt bilayer and find that as the Pt concentration increases, the spin Hall angle of CuPt alloy increases. Moreover, only 28% Pt in CuPt alloy can give rise to a spin Hall angle close to that of Pt. We further… ▽ More We have experimentally studied the effects on the spin Hall angle due to systematic addition of Pt into the light metal Cu. We perform spin torque ferromagnetic resonance measurements on Py/CuPt bilayer and find that as the Pt concentration increases, the spin Hall angle of CuPt alloy increases. Moreover, only 28% Pt in CuPt alloy can give rise to a spin Hall angle close to that of Pt. We further extract the spin Hall resistivity of CuPt alloy for different Pt concentrations and find that the contribution of skew scattering is larger for lower Pt concentrations, while the side-jump contribution is larger for higher Pt concentrations. From technological perspective, since the CuPt alloy can sustain high processing temperatures and Cu is the most common metallization element in the Si platform, it would be easier to integrate the CuPt alloy based spintronic devices into existing Si fabrication technology. △ Less

Submitted 29 July, 2017; originally announced July 2017.

Comments: Accepted for publication in Physical Review Applied

Journal ref: Phys. Rev. Applied 8 (2017) 024034

Anomalous current-induced spin torques in ferrimagnets near compensation

Authors: Rahul Mishra, Jiawei Yu, Xuepeng Qiu, M. Motapothula, T. Venkatesan, Hyunsoo Yang

Abstract: While current-induced spin-orbit torques (SOTs) have been extensively studied in ferromagnets and antiferromagnets, ferrimagnets have been less studied. Here we report the presence of enhanced spin-orbit torques resulting from negative exchange interaction in ferrimagnets. The effective field and switching efficiency increase substantially as CoGd approaches its compensation point, giving rise to… ▽ More While current-induced spin-orbit torques (SOTs) have been extensively studied in ferromagnets and antiferromagnets, ferrimagnets have been less studied. Here we report the presence of enhanced spin-orbit torques resulting from negative exchange interaction in ferrimagnets. The effective field and switching efficiency increase substantially as CoGd approaches its compensation point, giving rise to 9 times larger spin-orbit torques compared to that of non-compensated one. The macrospin modelling results also support efficient spin-orbit torques in a ferrimagnet. Our results suggest that ferrimagnets near compensation can be a new route for spin-orbit torque applications due to their high thermal stability and easy current-induced switching assisted by negative exchange interaction. △ Less

Submitted 23 March, 2017; originally announced March 2017.

The Nature of Electron Transport and visible light absorption in Strontium Niobate -- A Plasmonic Water Splitter

Authors: Dongyang Wan, Yongliang Zhao, Yao Cai, Teguh Citra Asmara, Zhen Huang, Jianqiang Chen, **dui Hong, Christopher T. Nelson, Mallikarjuna Rao Motapothula, Bixing Yan, Rong Xu, Haimei Zheng, Ariando, Andrivo Rusydi, Andrew Minor, Mark B. H. Breese, Mark Asta, Qinghua Xu, T. Venkatesan

Abstract: Semiconductor compounds are widely used for water splitting applications, where photo-generated electron-hole pairs are exploited to induce catalysis. Recently, powders of a metallic oxide (Sr$_{1-x}$NbO$_3$, 0.03 < x < 0.20) have shown competitive photocatalytic efficiency, opening up the material space available for finding optimizing performance in water-splitting applications. The origin of th… ▽ More Semiconductor compounds are widely used for water splitting applications, where photo-generated electron-hole pairs are exploited to induce catalysis. Recently, powders of a metallic oxide (Sr$_{1-x}$NbO$_3$, 0.03 < x < 0.20) have shown competitive photocatalytic efficiency, opening up the material space available for finding optimizing performance in water-splitting applications. The origin of the visible light absorption in these powders was reported to be due to an interband transition and the charge carrier separation was proposed to be due to the high carrier mobility of this material. In the current work we have prepared epitaxial thin films of Sr$_{0.94}$NbO$_{3+δ}$ and found that the bandgap of this material is ~4.1 eV, which is very large. Surprisingly the carrier density of the conducting phase reaches 10$^{22}$ cm$^{-3}$, which is only one order smaller than that of elemental metals and the carrier mobility is only 2.47 cm$^2$/(V$\cdot$s). Contrary to earlier reports, the visible light absorption at 1.8 eV (~688 nm) is due to the bulk plasmon resonance, arising from the large carrier density, instead of an interband transition. Excitation of the plasmonic resonance results in a multifold enhancement of the lifetime of charge carriers. Thus we propose that the hot charge carriers generated from decay of plasmons produced by optical absorption is responsible for the water splitting efficiency of this material under visible light irradiation. △ Less

Submitted 31 July, 2016; originally announced August 2016.

The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces

Authors: Z. Huang, K. Han, S. W. Zeng, M. Motapothula, W. M. Lü, C. J. Li, W. X. Zhou, J. M. D. Coey, T. Venkatesan, Ariando

Abstract: Since the discovery of two-dimensional electron gas (2DEG) at the oxide interface of LaAlO3/SrTiO3, improving carrier mobility has become an important issue for device applications. In this paper, by using an alternate polar perovskite insulator (La0.3Sr0.7)(Al0.65Ta0.35)O3 (LSAT) for reducing lattice mismatch from 3.0% to 1.0%, the low-temperature carrier mobility has been increased 30 fold to 35… ▽ More Since the discovery of two-dimensional electron gas (2DEG) at the oxide interface of LaAlO3/SrTiO3, improving carrier mobility has become an important issue for device applications. In this paper, by using an alternate polar perovskite insulator (La0.3Sr0.7)(Al0.65Ta0.35)O3 (LSAT) for reducing lattice mismatch from 3.0% to 1.0%, the low-temperature carrier mobility has been increased 30 fold to 35,000 cm2V-1s-1. Moreover, two critical thicknesses for the LSAT/SrTiO3 (001) interface are found: one at 5 unit cell for appearance of the 2DEG, the other at 12 unit cell for a peak in the carrier mobility. By contrast, the conducting (110) and (111) LSAT/STO interfaces only show a single critical thickness of 8 unit cells. This can be explained in terms of polar fluctuation arising from LSAT chemical composition. In addition to lattice mismatch and crystal symmetry at the interface, polar fluctuation arising from composition has been identified as an important variable to be tailored at the oxide interfaces to optimise the 2DEG transport. △ Less

Submitted 7 July, 2015; originally announced July 2015.

Comments: 17 pages, 4 figures

Journal ref: Nano Letters, March 09, 2016

Mechanisms of charge transfer and redistribution in LaAlO3/SrTiO3 revealed by high-energy optical conductivity

Authors: T. C. Asmara, A. Annadi, I. Santoso, P. K. Gogoi, A. Kotlov, H. M. Omer, M. Motapothula, M. B. H. Breese, M. Rübhausen, T. Venkatesan, Ariando, A. Rusydi

Abstract: In condensed matter physics the quasi two-dimensional electron gas at the interface of two different insulators, polar LaAlO3 on non-polar SrTiO3 (LaAlO3/SrTiO3) is a spectacular and surprising observation. This phenomenon is LaAlO3 film thickness-dependent and may be explained by the polarization catastrophe model, in which a charge transfer of 0.5 electron from the LaAlO3 film into the LaAlO3/Sr… ▽ More In condensed matter physics the quasi two-dimensional electron gas at the interface of two different insulators, polar LaAlO3 on non-polar SrTiO3 (LaAlO3/SrTiO3) is a spectacular and surprising observation. This phenomenon is LaAlO3 film thickness-dependent and may be explained by the polarization catastrophe model, in which a charge transfer of 0.5 electron from the LaAlO3 film into the LaAlO3/SrTiO3 interface is expected. Here we show that in conducting samples (more than 4 unit cells of LaAlO3) there is indeed a 0.5 electron transfer from LaAlO3 into the LaAlO3/SrTiO3 interface by studying the optical conductivity in a broad energy range (0.5-35 eV). Surprisingly, in insulating samples (less than 4 unit cells of LaAlO3) a redistribution of charges within the polar LaAlO3 sub-layers (from AlO2 to LaO) as large as 0.5 electron is observed, with no charge transfer into the interface. Hence, our results reveal the different mechanisms for the polarization catastrophe compensation in insulating and conducting LaAlO3/SrTiO3 interfaces. △ Less

Submitted 4 December, 2014; originally announced December 2014.

Comments: Main Article (33 pages, 7 figures, 1 table); Supplementary Materials (19 pages, 8 figures)

Journal ref: Nature Communications 5, 3663 (2014)

Bandgap Controlling of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3

Authors: Z. Q. Liu, W. Lu, S. W. Zeng, J. W. Deng, Z. Huang, C. J. Li, M. Motapothula, W. M. Lü, L. Sun, K. Han, J. Q. Zhong, P. Yang, N. N. Bao, W. Chen, J. S. Chen, Y. P. Feng, J. M. D. Coey, T. Venkatesan, Ariando

Abstract: We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 °C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancem… ▽ More We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 °C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancement can be utilized to tailor the electronic and magnetic phases of the two-dimensional electron gas (2DEG) in STO-based interface systems. For example, the oxygen-vacancy-induced 2DEG (2DEG-V) at the interface between amorphous LaAlO3 and STO films is more localized and the ferromagnetic order in the STO-film-based 2DEG-V can be clearly seen from low-temperature magnetotransport measurements. This opens an attractive path to tailor electronic, magnetic and optical properties of STO-based oxide interface systems under intensive focus in the oxide electronics community. Meanwhile, our study provides key insight into the origin of the fundamental issue that STO films are difficult to be doped into the fully metallic state by oxygen vacancies. △ Less

Submitted 29 April, 2014; v1 submitted 28 April, 2014; originally announced April 2014.

Comments: 35 pages, 6 figures in the main text,13 figures in the supporting information. To be appearing in Advanced Materials Interfaces soon

Metallic state in La-doped YBa$_2$Cu$_3$O$_y$ thin films with $n$-type charge carriers

Authors: S. W. Zeng, X. Wang, W. M. Lü, Z. Huang, M. Motapothula, Z. Q. Liu, Y. L. Zhao, A. Annadi, S. Dhar, H. Mao, W. Chen, T. Venkatesan, Ariando

Abstract: We report hole and electron do** in La-doped YBa$_2$Cu$_3$O$_y$(YBCO) thin films synthesized by pulsed laser deposition technique and subsequent \emph{in-situ} postannealing in oxygen ambient and vaccum. The $n$-type samples show a metallic behavior below the Mott limit and a high carrier density of $\sim2.8$ $\times$ 10$^{21}$ cm$^{-3}$ at room temperature (\emph{T}) at the optimally reduced co… ▽ More We report hole and electron do** in La-doped YBa$_2$Cu$_3$O$_y$(YBCO) thin films synthesized by pulsed laser deposition technique and subsequent \emph{in-situ} postannealing in oxygen ambient and vaccum. The $n$-type samples show a metallic behavior below the Mott limit and a high carrier density of $\sim2.8$ $\times$ 10$^{21}$ cm$^{-3}$ at room temperature (\emph{T}) at the optimally reduced condition. The in-plane resistivity ($ρ$$_{ab}$) of the $n$-type samples exhibits a quadratic \emph{T} dependence in the moderate-\emph{T} range and shows an anomaly at a relatively higher \emph{T} probably related to pseudogap formation analogous to underdoped Nd$_{2-x}$Ce$_x$CuO$_4$ (NCCO). Furthermore, $ρ$$_{ab}$(T), \emph{T}$_c$ and \emph{T} with minimum resistivity (\emph{T}$_{min}$) were investigated in both $p$- and $n$-side. The present results reveal the $n$-$p$ asymmetry (symmetry) within the metallic-state region in an underdoped cuprate and suggest the potential toward ambipolar superconductivity in a single YBCO system. △ Less

Submitted 25 July, 2012; originally announced July 2012.

Comments: 4 pages, 5 figures

Journal ref: Phys. Rev. B 86, 045124 (2012)

Cationic vacancy induced room-temperature ferromagnetism in transparent conducting anatase Ti_{1-x}Ta_xO_2 (x~0.05) thin films

Authors: A. Rusydi, S. Dhar, A. Roy Barman, Ariando, D. -C. Qi, M. Motapothula, J. B. Yi, I. Santoso, Y. P. Feng, K. Yang, Y. Dai, N. L. Yakovlev, J. Ding, A. T. S. Wee, G. Neuber, M. B. H. Breese, M. Ruebhausen, H. Hilgenkamp, T. Venkatesan

Abstract: We report room-temperature ferromagnetism in highly conducting transparent anatase Ti1-xTaxO2 (x~0.05) thin films grown by pulsed laser deposition on LaAlO3 substrates. Rutherford backscattering spectrometry (RBS), x-ray diffraction (XRD), proton induced x-ray emission (PIXE), x-ray absorption spectroscopy (XAS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) indicated negligible mag… ▽ More We report room-temperature ferromagnetism in highly conducting transparent anatase Ti1-xTaxO2 (x~0.05) thin films grown by pulsed laser deposition on LaAlO3 substrates. Rutherford backscattering spectrometry (RBS), x-ray diffraction (XRD), proton induced x-ray emission (PIXE), x-ray absorption spectroscopy (XAS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) indicated negligible magnetic contaminants in the films. The presence of ferromagnetism with concomitant large carrier densities was determined by a combination of superconducting quantum interference device (SQUID) magnetometry, electrical transport measurements, soft x-ray magnetic circular dichroism (SXMCD), XAS, and optical magnetic circular dichroism (OMCD) and was supported by first-principle calculations. SXMCD and XAS measurements revealed a 90% contribution to ferromagnetism from the Ti ions and a 10% contribution from the O ions. RBS/channelling measurements show complete Ta substitution in the Ti sites though carrier activation was only 50% at 5% Ta concentration implying compensation by cationic defects. The role of Ti vacancy and Ti3+ was studied via XAS and x-ray photoemission spectroscopy (XPS) respectively. It was found that in films with strong ferromagnetism, the Ti vacancy signal was strong while Ti3+ signal was absent. We propose (in the absence of any obvious exchange mechanisms) that the localised magnetic moments, Ti vacancy sites, are ferromagnetically ordered by itinerant carriers. Cationic-defect-induced magnetism is an alternative route to ferromagnetism in wide-band-gap semiconducting oxides without any magnetic elements. △ Less

Submitted 13 July, 2012; originally announced July 2012.

Comments: 21 pages, 10 figures, to appear in Philosophical Transaction - Royal Soc. A

Journal ref: Phil. Trans. R. Soc. A 370, 4927-4943 (2012 )

Large spectral weight transfer in optical conductivity of SrTiO$_{3}$ induced by intrinsic vacancies

Authors: Teguh C. Asmara, Xiao Wang, Iman Santoso, Qinfang Zhang, Tomonori Shirakawa, Dongchen Qi, Aleksei Kotlov, Mallikarjuna R. Motapothula, Mark H. Breese, T. Venkatesan, Seiji Yunoki, Michael Rübhausen, Ariando, Andrivo Rusydi

Abstract: The optical conductivity ($σ_{1}$) of SrTiO$_{3}$ for various vacancies has been systematically studied using a combination of ultraviolet - vacuum ultraviolet (UV-VUV) reflectivity and spectroscopic ellipsometry. For cation (Ti) vacancies, $σ_{1}$ shows large spectral weight transfer over a wide range of energy from as high as 35 eV to as low as 0.5 eV and the presence of mid-gap states, suggesti… ▽ More The optical conductivity ($σ_{1}$) of SrTiO$_{3}$ for various vacancies has been systematically studied using a combination of ultraviolet - vacuum ultraviolet (UV-VUV) reflectivity and spectroscopic ellipsometry. For cation (Ti) vacancies, $σ_{1}$ shows large spectral weight transfer over a wide range of energy from as high as 35 eV to as low as 0.5 eV and the presence of mid-gap states, suggesting that strong correlations play an important role. While for anion (O) vacancies $σ_{1}$ shows changes from 7.4 eV up to 35 eV. These unexpected results can be explained in terms of orbital reconstruction. △ Less

Submitted 29 June, 2012; v1 submitted 28 June, 2012; originally announced June 2012.

Comments: Main article (5 pages, 3 figures); Supporting Online Material (12 pages, 6 Figures)

Reversible room-temperature ferromagnetism in Nb-doped SrTiO3 single crystals

Authors: Z. Q. Liu, W. M. Lu, S. L. Lim, X. P. Qiu, N. N. Bao, M. Motapothula, J. B. Yi, M. Yang, S. Dhar, T. Venkatesan, Ariando

Abstract: The search for oxide-based room-temperature ferromagnetism has been one of the holy grails in condensed matter physics. Room-temperature ferromagnetism observed in Nb-doped SrTiO3 single crystals is reported in this Rapid Communication. The ferromagnetism can be eliminated by air annealing (making the samples predominantly diamagnetic) and can be recovered by subsequent vacuum annealing. The tempe… ▽ More The search for oxide-based room-temperature ferromagnetism has been one of the holy grails in condensed matter physics. Room-temperature ferromagnetism observed in Nb-doped SrTiO3 single crystals is reported in this Rapid Communication. The ferromagnetism can be eliminated by air annealing (making the samples predominantly diamagnetic) and can be recovered by subsequent vacuum annealing. The temperature dependence of magnetic moment resembles the temperature dependence of carrier density, indicating that the magnetism is closely related to the free carriers. Our results suggest that the ferromagnetism is induced by oxygen vacancies. In addition, hysteretic magnetoresistance was observed for magnetic field parallel to current, indicating that the magnetic moments are in the plane of the samples. The x-ray photoemission spectroscopy, the static time-of-flight and the dynamic secondary ion mass spectroscopy and proton induced x-ray emission measurements were performed to examine magnetic impurities, showing that the observed ferromagnetism is unlikely due to any magnetic contaminant. △ Less

Submitted 18 June, 2013; v1 submitted 3 January, 2012; originally announced January 2012.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. B 87, 220405(R) (2013)