Improved Performance of Organic Light-Emitting Transistors Enabled by Polyurethane Gate Dielectric
Authors:
Arthur R. J. Barreto,
Graziâni Candiotto,
Harold J. C. Avila,
Rafael S. Carvalho,
Aline Magalhães dos Santos,
Mario Prosa,
Emilia Benvenuti,
Salvatore Moschetto,
Stefano Toffanin,
Rodrigo B. Capaz,
Michele Muccini,
Marco Cremona
Abstract:
Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low charge mobility and high threshold voltage are critical hurdles to practical OLETs implementation. This work reports on the improvements obtained by using polyureth…
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Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low charge mobility and high threshold voltage are critical hurdles to practical OLETs implementation. This work reports on the improvements obtained by using polyurethane films as dielectric layer material in place of the standard poly(methylmethacrylate) (PMMA) in OLET devices. It was found that polyurethane drastically reduces the number of traps in the device thereby improving electrical and optoelectronic device parameters. In addition, a model was developed to rationalize an anomalous behavior at the pinch-off voltage. Our findings represent a step forward to overcome the limiting factors of OLETs that prevent their use in commercial electronics by providing a simple route for low-bias device operation.
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Submitted 4 December, 2023;
originally announced December 2023.
