Towards scalable silicon quantum computing
Authors:
M. Vinet,
L. Hutin,
B. Bertrand,
S. Barraud,
J. -M. Hartmann,
Y. -J. Kim,
V. Mazzocchi,
A. Amisse,
H. Bohuslavskyi,
L. Bourdet,
A. Crippa,
X. Jehl,
R. Maurand,
Y. -M. Niquet,
M. Sanquer,
B. Venitucci,
B. Jadot,
E. Chanrion,
P. -A. Mortemousque,
C. Spence,
M. Urdampilleta,
S. De Franceschi,
T. Meunier
Abstract:
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
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Submitted 20 December, 2019;
originally announced December 2019.
