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Post-field ionization of Si clusters in atom probe tomography: A joint theoretical and experimental study
Authors:
Ramya Cuduvally,
Richard J. H. Morris,
Giel Oosterbos,
Piero Ferrari,
Claudia Fleischmann,
Richard G. Forbes,
Wilfried Vandervorst
Abstract:
A major challenge for Atom Probe Tomography (APT) quantification is the inability to decouple ions which possess the same mass/charge-state ($m/n$) ratio but a different mass. For example, $^{75}{\rm{As}}^{+}$ and $^{75}{\rm{As}}{_2}^{2+}$ at ~75 Da or $^{14}{\rm{N}}^+$ and $^{28}{\rm{Si}}^{2+}$ at ~14 Da, cannot be differentiated without the additional knowledge of their kinetic energy or a signi…
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A major challenge for Atom Probe Tomography (APT) quantification is the inability to decouple ions which possess the same mass/charge-state ($m/n$) ratio but a different mass. For example, $^{75}{\rm{As}}^{+}$ and $^{75}{\rm{As}}{_2}^{2+}$ at ~75 Da or $^{14}{\rm{N}}^+$ and $^{28}{\rm{Si}}^{2+}$ at ~14 Da, cannot be differentiated without the additional knowledge of their kinetic energy or a significant improvement of the mass resolving power. Such mass peak overlaps lead to ambiguities in peak assignment, resulting in compositional uncertainty and an incorrect labelling of the atoms in a reconstructed volume. In the absence of a practical technology for measuring the kinetic energy of the field-evaporated ions, we propose and then explore the applicability of a post-experimental analytical approach to resolve this problem based on the fundamental process that governs the production of multiply charged molecular ions/clusters in APT, i.e., Post-Field Ionization (PFI). The ability to predict the PFI behaviour of molecular ions as a function of operating conditions could offer the first step towards resolving peak overlap and minimizing compositional uncertainty. We explore this possibility by comparing the field dependence of the charge-state-ratio for Si clusters ($\rm{Si}_2$, $\rm{Si}_3$ and $\rm{Si}_4$) with theoretical predictions using the widely accepted Kingham PFI theory. We then discuss the model parameters that may affect the quality of the fit and the possible ways in which the PFI of molecular ions in APT can be better understood. Finally, we test the transferability of the proposed approach to different material systems and outline ways forward for achieving more reliable results.
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Submitted 11 July, 2022;
originally announced July 2022.
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Strain enhanced electron cooling in a degenerately doped semiconductor
Authors:
M. J. Prest,
J. T. Muhonen,
M. Prunnila,
D. Gunnarsson,
V. A. Shah,
J. S. Richardson-Bullock,
A. Dobbie,
M. Myronov,
R. J. H. Morris,
T. E. Whall,
E. H. C. Parker,
D. R. Leadley
Abstract:
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cool…
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Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.
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Submitted 18 November, 2011; v1 submitted 2 November, 2011;
originally announced November 2011.
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Strain control of electron-phonon energy loss rate in many-valley semiconductors
Authors:
J. T. Muhonen,
M. J. Prest,
M. Prunnila,
D. Gunnarsson,
V. A. Shah,
A. Dobbie,
M. Myronov,
R. J. H. Morris,
T. E. Whall,
E. H. C. Parker,
D. R. Leadley
Abstract:
We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample.
We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample.
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Submitted 31 January, 2011;
originally announced January 2011.
