Showing 1–50 of 130 results for author: Morpurgo, A F

Influence of magnetism on vertical hop** transport in CrSBr

Authors: Xiaohanwen Lin, Fan Wu, Sara A. Lopéz-Paz, Fabian O. von Rohr, Marco Gibertini, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo

Abstract: We investigate the c-direction conduction in CrSBr in the linear regime, not accessible in other van der Waals (vdW) magnetic semiconductors, because of the unmeasurably low current. The resistivity -- $10^8$ to $10^{11}$ times larger than in the a- and b-directions -- exhibits magnetic state dependent thermally activated and variable range hop** transport. In the spin-flip phase at 2 T, the act… ▽ More We investigate the c-direction conduction in CrSBr in the linear regime, not accessible in other van der Waals (vdW) magnetic semiconductors, because of the unmeasurably low current. The resistivity -- $10^8$ to $10^{11}$ times larger than in the a- and b-directions -- exhibits magnetic state dependent thermally activated and variable range hop** transport. In the spin-flip phase at 2 T, the activation energy is 20 meV lower than in the antiferromagnetic state, due to a downshift of the conduction band edge, in agreement with ab-initio calculations. In the variable range hop** regime, the average hop** length decreases from twice the interlayer distance to the interlayer distance at 2 T, because in the antiferromagnetic state the large exchange energy impedes electrons hop** between adjacent layers. Our work demonstrates that the linear transport regime provides new information about electronic processes in vdW magnetic semiconductors, and shows how magnetism influences these processes both in real and reciprocal space. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Multiple antiferromagnetic phases and magnetic anisotropy in exfoliated CrBr$_3$ multilayers

Authors: Fengrui Yao, Volodymyr Multian, Zhe Wang, Nicolas Ubrig, Jérémie Teyssier, Fan Wu, Enrico Giannini, Marco Gibertini, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo

Abstract: In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear, skyrmion-like spin textures. Recent experimental searches for these textures have focused on CrI$_3$, known to exhibit either ferromagnetic or antiferromagnetic interlayer order, depending on l… ▽ More In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear, skyrmion-like spin textures. Recent experimental searches for these textures have focused on CrI$_3$, known to exhibit either ferromagnetic or antiferromagnetic interlayer order, depending on layer stacking. However, the very strong uniaxial anisotropy of CrI$_3$ disfavors smooth non-collinear phases in twisted bilayers. Here, we report the experimental observation of three distinct magnetic phases -- one ferromagnetic and two antiferromagnetic -- in exfoliated CrBr$_3$ multilayers, and reveal that the uniaxial anisotropy is significantly smaller than in CrI$_3$. These results are obtained by magnetoconductance measurements on CrBr$_3$ tunnel barriers and Raman spectroscopy, in conjunction with density functional theory calculations, which enable us to identify the stackings responsible for the different interlayer magnetic couplings. The detection of all locally stable magnetic states predicted to exist in CrBr$_3$ and the excellent agreement found between theory and experiments, provide complete information on the stacking-dependent interlayer exchange energy and establish twisted bilayer CrBr$_3$ as an ideal system to deterministically create non-collinear magnetic phases. △ Less

Submitted 16 August, 2023; originally announced August 2023.

Electronic structure of few-layer black phosphorus from $μ$-ARPES

Authors: Florian Margot, Simone Lisi, Irène Cucchi, Edoardo Cappelli, Andrew Hunter, Ignacio Gutiérrez-Lezama, KeYuan Ma, Fabian von Rohr, Christophe Berthod, Francesco Petocchi, Samuel Poncé, Nicola Marzari, Marco Gibertini, Anna Tamai, Alberto F. Morpurgo, Felix Baumberger

Abstract: Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus far. Here we use a recently developed laser-based micro-focus angle resolved photoemission ($μ$-ARPES) system to establish the electronic structure of 2… ▽ More Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus far. Here we use a recently developed laser-based micro-focus angle resolved photoemission ($μ$-ARPES) system to establish the electronic structure of 2-9 layer BP from experiment. Our measurements unveil ladders of anisotropic, quantized subbands at energies that deviate from the scaling observed in conventional semiconductor quantum wells. We quantify the anisotropy of the effective masses and determine universal tight-binding parameters which provide an accurate description of the electronic structure for all thicknesses. △ Less

Submitted 1 June, 2023; originally announced June 2023.

Comments: Supporting Information available upon request

Journal ref: Nano Lett. 2023, 23 6433-6439

Magnetism-induced band-edge shift as mechanism for magnetoconductance in CrPS$_4$ transistors

Authors: Fan Wu, Marco Gibertini, Kenji Watanabe, Takashi Taniguchi, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: Transistors realized on 2D antiferromagnetic semiconductor CrPS$_4$ exhibit large magnetoconductance, due to magnetic-field-induced changes in magnetic state. The microscopic mechanism coupling conductance and magnetic state is not understood. We identify it by analyzing the evolution of the parameters determining the transistor behavior -- carrier mobility and threshold voltage -- with temperatur… ▽ More Transistors realized on 2D antiferromagnetic semiconductor CrPS$_4$ exhibit large magnetoconductance, due to magnetic-field-induced changes in magnetic state. The microscopic mechanism coupling conductance and magnetic state is not understood. We identify it by analyzing the evolution of the parameters determining the transistor behavior -- carrier mobility and threshold voltage -- with temperature and magnetic field. For temperatures T near the Néel temperature $T_N$, the magnetoconductance originates from a mobility increase due to the applied magnetic field that reduces spin fluctuation induced disorder. For $T << T_N$, instead, what changes is the threshold voltage, so that increasing the field at fixed gate voltage increases the density of accumulated electrons. The phenomenon is explained by a conduction band-edge shift correctly predicted by \emph{ab-initio} calculations. Our results demonstrate that the bandstructure of CrPS$_4$ depends on its magnetic state and reveal a mechanism for magnetoconductance that had not been identified earlier. △ Less

Submitted 21 August, 2023; v1 submitted 25 April, 2023; originally announced April 2023.

Full control of solid-state electrolytes for electrostatic gating

Authors: Chuanwu Cao, Margherita Melegari, Marc Philippi, Daniil Domaretskiy, Nicolas Ubrig, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo

Abstract: Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top-electrolyte gates, which pose experimental constraints and make device fabrication complex. Promising results obtained recently in FETs based on solid-state electrolytes remain plagued by spurious phenomena of unknown origin,… ▽ More Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top-electrolyte gates, which pose experimental constraints and make device fabrication complex. Promising results obtained recently in FETs based on solid-state electrolytes remain plagued by spurious phenomena of unknown origin, preventing proper transistor operation, and causing limited control and reproducibility. Here we explore a class of solid-state electrolytes for gating (Lithium-ion conducting glass-ceramics, LICGCs), identify the processes responsible for the spurious phenomena and irreproducible behavior,and demonstrate properly functioning transistors exhibiting high density ambipolar operation with gate capacitance of ~20-50 $μ$F/cm$^2$ (depending on the polarity of the accumulated charges). Using two-dimensional semiconducting transition-metal dichalcogenides we demonstrate the ability to implement ionic-gate spectroscopy to determine the semiconducting bandgap, and to accumulate electron densities above 10$^{14}$ cm$^{-2}$, resulting in gate-induced superconductivity in MoS$_2$ multilayers. As LICGCs are implemented in a back-gate configuration, they leave the surface of the material exposed, enabling the use of surface-sensitive techniques (such as scanning tunneling microscopy and photoemission spectroscopy) impossible so far in ionic-liquid gated devices. They also allow double ionic gated devices providing independent control of charge density and electric field. △ Less

Submitted 23 February, 2023; originally announced February 2023.

Gate-controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D magnetic semiconductor CrPS$_4$

Authors: Fan Wu, Marco Gibertini, Kenji Watanabe, Takashi Taniguchi, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing transistor operation. Here, we show that exfoliated layers of CrPS$_4$ -- a 2D layered antiferromagnetic semiconductor whose bandwidth approaches 1 eV -- allow the r… ▽ More Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing transistor operation. Here, we show that exfoliated layers of CrPS$_4$ -- a 2D layered antiferromagnetic semiconductor whose bandwidth approaches 1 eV -- allow the realization of FETs that operate properly down to cryogenic temperature. Using these devices, we perform conductance measurements as a function of temperature and magnetic field, to determine the full magnetic phase diagram, which includes a spin-flop and a spin-flip phase. We find that the magnetoconductance depends strongly on gate voltage, reaching values as high as 5000 % near the threshold for electron conduction. The gate voltage also allows the magnetic states to be tuned, despite the relatively large thickness of the CrPS$_4$ multilayers employed in our study. Our results show the need to employ 2D magnetic semiconductors with sufficiently large bandwidth to realize properly functioning transistors, and identify a candidate material to realize a fully gate-tunable half-metallic conductor. △ Less

Submitted 2 May, 2023; v1 submitted 25 January, 2023; originally announced January 2023.

Comments: Accepted for publication in Advanced Materials

Journal ref: Advanced Materials 2023

Determining spin-orbit coupling in graphene by quasiparticle interference imaging

Authors: Lihuan Sun, Louk Rademaker, Diego Mauro, Alessandro Scarfato, Árpád Pásztor, Ignacio Gutiérrez-Lezama, Zhe Wang, Jose Martinez-Castro, Alberto F. Morpurgo, Christoph Renner

Abstract: Inducing and controlling spin-orbit coupling (SOC) in graphene is key to create topological states of matter, and for the realization of spintronic devices. Placing graphene onto a transition metal dichalcogenide is currently the most successful strategy to achieve this goal, but there is no consensus as to the nature and the magnitude of the induced SOC. Here, we show that the presence of backsca… ▽ More Inducing and controlling spin-orbit coupling (SOC) in graphene is key to create topological states of matter, and for the realization of spintronic devices. Placing graphene onto a transition metal dichalcogenide is currently the most successful strategy to achieve this goal, but there is no consensus as to the nature and the magnitude of the induced SOC. Here, we show that the presence of backscattering in graphene-on-WSe$_2$ heterostructures can be used to probe SOC and to determine its strength quantitatively, by imaging quasiparticle interference with a scanning tunneling microscope. A detailed theoretical analysis of the Fourier transform of quasiparticle interference images reveals that the induced SOC consists of a valley-Zeeman ($λ_{\text{vZ}}\approx 2$ meV) and a Rashba ($λ_\text{R}\approx 15$ meV) term, one order of magnitude larger than what theory predicts, but in excellent agreement with earlier transport experiments. The validity of our analysis is confirmed by measurements on a 30 degree twist angle heterostructure that exhibits no backscattering, as expected from symmetry considerations. Our results demonstrate a viable strategy to determine SOC quantitatively by imaging quasiparticle interference. △ Less

Submitted 9 December, 2022; originally announced December 2022.

Band Gap Opening in Bilayer Graphene-CrCl$_3$/CrBr$_3$/CrI$_3$ van der Waals Interfaces

Authors: Giulia Tenasini, David Soler-Delgado, Zhe Wang, Fengrui Yao, Dumitru Dumcenco, Enrico Giannini, Kenji Watanabe, Takashi Taniguchi, Christian Moulsdale, Aitor Garcia-Ruiz, Vladimir I. Fal'ko, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo

Abstract: We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX$_3$; X=Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX$_3$ takes place (reaching densities in excess of $10^{13}$ cm$^{-2}$), and generates an electric field perpendicular to the interface that opens a band gap in BLG. We determine the gap from the ac… ▽ More We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX$_3$; X=Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX$_3$ takes place (reaching densities in excess of $10^{13}$ cm$^{-2}$), and generates an electric field perpendicular to the interface that opens a band gap in BLG. We determine the gap from the activation energy of the conductivity and find excellent agreement with the latest theory accounting for the contribution of the $σ$ bands to the BLG dielectric susceptibility. We further show that for BLG/CrCl$_3$ and BLG/CrBr$_3$ the band gap can be extracted from the gate voltage dependence of the low-temperature conductivity, and use this finding to refine the gap dependence on the magnetic field. Our results allow a quantitative comparison of the electronic properties of BLG with theoretical predictions and indicate that electrons occupying the CrX$_3$ conduction band are correlated. △ Less

Submitted 24 August, 2022; v1 submitted 5 July, 2022; originally announced July 2022.

Journal ref: Nano Lett., 22 (16), 6760-6766 (2022)

Probing magnetism in exfoliated VI$_3$ layers with magnetotransport

Authors: David Soler-Delgado, Feng-rui Yao, Dumitru Dumcenco, Enrico Giannini, Jiaruo Li, Connor A. Occhialini, Riccardo Comin, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: We perform magnetotransport experiments on VI$_3$ multilayers, to investigate the relation between ferromagnetism in bulk and in exfoliated layers. The magnetoconductance measured on field-effect transistors and tunnel barriers shows that the Curie temperature of exfoliated multilayers is $T_C$ = 57 K, larger than in bulk ($T_{\rm C,bulk}$ = 50 K). Below $T \approx$ 40 K, we observe an unusual evo… ▽ More We perform magnetotransport experiments on VI$_3$ multilayers, to investigate the relation between ferromagnetism in bulk and in exfoliated layers. The magnetoconductance measured on field-effect transistors and tunnel barriers shows that the Curie temperature of exfoliated multilayers is $T_C$ = 57 K, larger than in bulk ($T_{\rm C,bulk}$ = 50 K). Below $T \approx$ 40 K, we observe an unusual evolution of the tunneling magnetoconductance, analogous to the phenomenology observed in bulk. Comparing the magnetoconductance measured for fields applied in- or out-of-plane corroborates the analogy, allows us to determine that the orientation of the easy-axis in multilayers is similar to that in bulk, and suggests that the in-plane component of the magnetization points in different directions in different layers. Besides establishing that the magnetic state of bulk and multilayers are similar, our experiments illustrate the complementarity of magnetotransport and magneto-optical measurements to probe magnetism in 2D materials. △ Less

Submitted 3 August, 2022; v1 submitted 21 April, 2022; originally announced April 2022.

Journal ref: Nano Letters 2022

Dynamic Magnetic Crossover at the Origin of the Hidden-Order in van der Waals Antiferromagnet CrSBr

Authors: Sara A. López-Paz, Zurab Guguchia, Vladimir Y. Pomjakushin, Catherine Witteveen, Antonio Cervellino, Hubertus Luetkens, Nicola Casati, Alberto F. Morpurgo, Fabian O. von Rohr

Abstract: The van der Waals material CrSBr stands out as a promising two-dimensional magnet. Especially, its high magnetic ordering temperature and versatile magneto-transport properties make CrSBr an important candidate for new devices in the emergent field of two-dimensional magnetic materials. To date, the magnetic and structural properties of CrSBr have not been fully elucidated. Here, we report on the… ▽ More The van der Waals material CrSBr stands out as a promising two-dimensional magnet. Especially, its high magnetic ordering temperature and versatile magneto-transport properties make CrSBr an important candidate for new devices in the emergent field of two-dimensional magnetic materials. To date, the magnetic and structural properties of CrSBr have not been fully elucidated. Here, we report on the detailed temperature-dependent magnetic and structural properties of this material, by comprehensively combining neutron scattering, muon spin relaxation spectroscopy, synchrotron X-ray diffraction, and magnetization measurements. We evidence that this material undergoes a transition to an A-type antiferromagnetic state below $T_{\rm N} \approx$ 140 K, with a pronounced two-dimensional character as deduced from the determined critical exponent of $β\approx $ 0.18. In our analysis of the field-induced metamagnetic transition, we find that the ferromagnetic correlations within the monolayers persist clearly above the Néel temperature in this material. Furthermore, we unravel the low-temperature (i.e. $T < T_{\rm N}$) magnetic hidden order within the long-range magnetically ordered state. We find that it is associated to a slowing down of the magnetic fluctuations, accompanied by a continuous reorientation of the internal magnetic field. These take place upon cooling below $T_s$ $\approx$ 100 K, until a spin freezing process occurs at $T$* $\approx$ 40 K. We argue this complex dynamic behavior to reflect a magnetic crossover driven by the in-plane uniaxial anisotropy, which is ultimately caused by the mixed-anion character of the material. Our findings indicate that the magnetic and structural properties of CrSBr widen its potential application as a component for spin-based electronic devices. △ Less

Submitted 22 March, 2022; originally announced March 2022.

Journal ref: Nature Communications 13, 4745 (2022)

Quasi 1D electronic transport in a 2D magnetic semiconductor

Authors: Fan Wu, Ignacio Gutiérrez-Lezama, Sara A. Lopéz-Paz, Marco Gibertini, Kenji Watanabe, Takashi Taniguchi, Fabian O. von Rohr, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: We investigate electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor that is attracting attention because of its magnetic properties. We find an extremely pronounced anisotropy that manifests itself in qualitative and quantitative differences of all quantities measured along the in-plane \textit{a} and \textit{b} crystallographic directions. In particular, we observe a q… ▽ More We investigate electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor that is attracting attention because of its magnetic properties. We find an extremely pronounced anisotropy that manifests itself in qualitative and quantitative differences of all quantities measured along the in-plane \textit{a} and \textit{b} crystallographic directions. In particular, we observe a qualitatively different dependence of the conductivities $σ_a$ and $σ_b$ on temperature and gate voltage, accompanied by orders of magnitude differences in their values ($σ_b$/$σ_a \approx 3\cdot10^2-10^5$ at low temperature and large negative gate voltage). We also find a different behavior of the longitudinal magnetoresistance in the two directions, and the complete absence of the Hall effect in transverse resistance measurements. These observations appear not to be compatible with a description in terms of conventional band transport of a 2D doped semiconductor. The observed phenomenology -- together with unambiguous signatures of a 1D van Hove singularity that we detect in energy resolved photocurrent measurements -- indicate that electronic transport through CrSBr multilayers is better interpreted by considering the system as formed by weakly and incoherently coupled 1D wires, than by conventional 2D band transport. We conclude that CrSBr is the first 2D semiconductor to show distinctly quasi 1D electronic transport properties. △ Less

Submitted 23 February, 2022; originally announced February 2022.

Comments: Accepted for publication in Advanced Materials

Journal ref: Adv.Mater.2022, 34, 2109759 (2022)

Light sources with bias tunable spectrum based on van der Waals interface transistors

Authors: Hugo Henck, Diego Mauro, Daniil Domaretskiy, Marc Philippi, Shahriar Memaran, Wenkai Zheng, Zhengguang Lu, Dmitry Shcherbakov, Chun Ning Lau, Dmitry Smirnov, Luis Balicas, Kenji Watanabe, Vladimir I. Fal'ko, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broa… ▽ More Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage -- by suitably selecting the material forming the interfaces -- and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods. △ Less

Submitted 8 July, 2022; v1 submitted 4 January, 2022; originally announced January 2022.

Report number: 10.1038/s41467-022-31605-9

Journal ref: Nature Communications 13, 3917 (2022)

Quenching the band gap of 2D semiconductors with a perpendicular electric field

Authors: Daniil Domaretskiy, Marc Philippi, Marco Gibertini, Nicolas Ubrig, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo

Abstract: The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally shortly after the discovery of graphene by opening a finite band gap in graphene bilayers, which naturally are zero-gap semiconductors. So far, however, the same principle could not be employed to control a broader class of… ▽ More The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally shortly after the discovery of graphene by opening a finite band gap in graphene bilayers, which naturally are zero-gap semiconductors. So far, however, the same principle could not be employed to control a broader class of materials, because the required electric fields are beyond reach in current devices. To overcome this limitation, we have realized double ionic gated transistors that enable the application of very large electric fields. Using these devices, we show that the band gap of few-layer semiconducting transition metal dichalcogenides can be continuously suppressed from 1.5 eV to zero. Our results illustrate an unprecedented level of control of the band structures of 2D semiconductors, which is important for future research and applications. △ Less

Submitted 13 August, 2021; originally announced August 2021.

Comments: Submitted paper

Journal ref: Nature Nanotechnology, tbd (2022)

Theory of cross quantum capacitance

Authors: Christophe Berthod, Hai**g Zhang, Alberto F. Morpurgo, Thierry Giamarchi

Abstract: Impressive progress in the control of atomically thin crystals is now enabling the realization of gated structures in which two electrodes are separated by atomic scale distances. The electrical capacitance of these structures is determined by phenomena that are not relevant in capacitors with larger electrode separation. With the aim to analyze these phenomena, we use linear response theory to de… ▽ More Impressive progress in the control of atomically thin crystals is now enabling the realization of gated structures in which two electrodes are separated by atomic scale distances. The electrical capacitance of these structures is determined by phenomena that are not relevant in capacitors with larger electrode separation. With the aim to analyze these phenomena, we use linear response theory to develop a systematic description of capacitance for two coupled electron liquids, accounting for the wave nature of electrons, as well as for the effect of both intra and interlayer Coulomb interactions. Our theory leads to a general expression for the electrical capacitance in terms of both intra and interlayer electronic polarizabilities. The intralayer polarizability is directly related to the conventional expression for the quantum capacitance, whereas the interlayer polarizability term accounts for interaction-induced correlations between charges hosted by opposite capacitor plates. We refer to this latter term as to the cross quantum capacitance. We discuss the implications of the general expression for the capacitance, show that it leads to established results when the effect of interlayer correlations is negligible, and that the intra and interlayer polarizabilities play a comparable role for capacitors with very small electrode separation. Using two different approaches, we calculate the capacitance in specific cases, and find that the interlayer polarizability can be either positive or negative, so that the cross quantum capacitance can either increase or decrease the total capacitance. We conclude by showing that the cross quantum capacitance term can lead to a non-monotonic evolution of the total capacitance with increasing separation between the capacitor plates, which would represent an unambiguous manifestation of the cross quantum capacitance if observed experimentally. △ Less

Submitted 15 October, 2021; v1 submitted 19 July, 2021; originally announced July 2021.

Comments: Published version

Journal ref: Phys. Rev. Research 3, 043036 (2021)

Magnetization dependent tunneling conductance of ferromagnetic barriers

Authors: Zhe Wang, Ignacio Gutiérrez-Lezama, Dumitru Dumcenco, Nicolas Ubrig, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Marco Gibertini, Alberto F. Morpurgo

Abstract: Recent experiments on van der Waals antiferrmagnets such as CrI3, CrCl3 and MnPS3 have shown that using atomically thin layers as tunnel barriers and measuring the temperature ($T$) and magnetic field ($H$) dependence of the conductance allows their magnetic phase diagram to be mapped. In contrast, barriers made of CrBr3 -- the sole van der Waals ferromagnet investigated in this way -- were found… ▽ More Recent experiments on van der Waals antiferrmagnets such as CrI3, CrCl3 and MnPS3 have shown that using atomically thin layers as tunnel barriers and measuring the temperature ($T$) and magnetic field ($H$) dependence of the conductance allows their magnetic phase diagram to be mapped. In contrast, barriers made of CrBr3 -- the sole van der Waals ferromagnet investigated in this way -- were found to exhibit small and featureless magnetoconductance, seemingly carrying little information about magnetism. Here we show that -- despite these early results -- the conductance of CrBr3 tunnel barriers does provide detailed information about the magnetic state of atomically thin CrBr3 crystals for $T$ both above and below the Curie temperature ($T_C = 32$ K). Our analysis establishes that the tunneling conductance depends on $H$ and $T$ exclusively through the magnetization $M(H,T)$, over the entire temperature range investigated (2-50 K). The phenomenon is reproduced in detail by the spin-dependent Fowler-Nordheim model for tunneling, and is a direct manifestation of the spin splitting of the CrBr3 conduction band. These findings demonstrate that the investigation of magnetism by tunneling conductance measurements is not limited to antiferromagnets, but can also be applied to ferromagnetic materials. △ Less

Submitted 25 June, 2021; originally announced June 2021.

Journal ref: Nat Commun 12, 6659 (2021)

Identifying atomically thin crystals with diffusively reflected light

Authors: D. Domaretskiy, N. Ubrig, I. Gutiérrez-Lezama, M. K. Tran, A. F. Morpurgo

Abstract: The field of two-dimensional materials has been develo** at an impressive pace, with atomically thin crystals of an increasing number of different compounds that have become available, together with techniques enabling their assembly into functional heterostructures. The strategy to detect these atomically thin crystals has however remained unchanged since the discovery of graphene. Such an abse… ▽ More The field of two-dimensional materials has been develo** at an impressive pace, with atomically thin crystals of an increasing number of different compounds that have become available, together with techniques enabling their assembly into functional heterostructures. The strategy to detect these atomically thin crystals has however remained unchanged since the discovery of graphene. Such an absence of evolution is starting to pose problems because for many of the 2D materials of current interest the optical contrast provided by the commonly used detection procedure is insufficient to identify the presence of individual monolayers or to determine unambiguously the thickness of atomically thin multilayers. Here we explore an alternative detection strategy, in which the enhancement of optical contrast originates from the use of optically inhomogeneous substrates, leading to diffusively reflected light. Owing to its peculiar polarization properties and to its angular distribution, diffusively reflected light allows a strong contrast enhancement to be achieved through the implementation of suitable illumination-detection schemes. We validate this conclusion by carrying out a detailed quantitative analysis of optical contrast, which fully reproduces our experimental observations on over 60 WSe$_2$ mono-, bi-, and trilayers. We further validate the proposed strategy by extending our analysis to atomically thin phosphorene, InSe, and graphene crystals. Our conclusion is that the use of diffusively reflected light to detect and identify atomically thin layers is an interesting alternative to the common detection scheme based on Fabry-Perot interference, because it enables atomically thin layers to be detected on substrates others than the commonly used Si/SiO$_2$, and it may offer higher sensitivity depending on the specific 2D material considered. △ Less

Submitted 23 June, 2021; originally announced June 2021.

Journal ref: 2D Mater. 8 045016 (2021)

Ionic Gate Spectroscopy of 2D Semiconductors

Authors: Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Evgeniy Ponomarev, Alberto F. Morpurgo

Abstract: Reliable and precise measurements of the relative energy of band edges in semiconductors are needed to determine band gaps and band offsets, as well as to establish the band diagram of devices and heterostructures. These measurements are particularly important in the field of two-dimensional materials, in which many new semiconducting systems are becoming available through exfoliation of bulk crys… ▽ More Reliable and precise measurements of the relative energy of band edges in semiconductors are needed to determine band gaps and band offsets, as well as to establish the band diagram of devices and heterostructures. These measurements are particularly important in the field of two-dimensional materials, in which many new semiconducting systems are becoming available through exfoliation of bulk crystals. For two-dimensional semiconductors, however, commonly employed techniques suffer from difficulties rooted either in the physics of these systems, or of technical nature. The very large exciton binding energy, for instance, prevents the band gap to be determined from a simple spectral analysis of photoluminescence, and the limited lateral size of atomically thin crystals makes the use of conventional scanning tunneling spectroscopy cumbersome. Ionic gate spectroscopy is a newly developed technique that exploits ionic gate field-effect transistors to determine quantitatively the relative alignment of band edges of two-dimensional semiconductors in a straightforward way, directly from transport measurements (i.e., from the transistor electrical characteristics). The technique relies on the extremely large geometrical capacitance of ionic gated devices that -- under suitable conditions -- enables a change in gate voltage to be directly related to a shift in chemical potential. Here we present an overview of ionic gate spectroscopy, and illustrate its relevance with applications to different two-dimensional semiconducting transition metal dichalcogenides and van der Waals heterostructures. △ Less

Submitted 3 March, 2021; originally announced March 2021.

Journal ref: Nat Rev Phys (2021)

Giant anomalous Hall effect in quasi-two-dimensional layered antiferromagnet Co$_{1/3}$NbS$_2$

Authors: Giulia Tenasini, Edoardo Martino, Nicolas Ubrig, Nirmal J. Ghimire, Helmuth Berger, Oksana Zaharko, Fengcheng Wu, J. F. Mitchell, Ivar Martin, László Forró, Alberto F. Morpurgo

Abstract: The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can in principle be observed. Here, we present experiments on micro-fabricated devices based on Co$_{1/3}$NbS$_2$, a layered AFM that was recently found to exhibit AHE in bulk crystals bel… ▽ More The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can in principle be observed. Here, we present experiments on micro-fabricated devices based on Co$_{1/3}$NbS$_2$, a layered AFM that was recently found to exhibit AHE in bulk crystals below the Néel temperature T$_N$ = 29 K. Transport measurements reveal a pronounced resistivity anisotropy, indicating that upon lowering temperature the electronic coupling between individual atomic layers is increasingly suppressed. The experiments also show an extremely large anomalous Hall conductivity of approximately 400 S/cm, more than one order of magnitude larger than in the bulk, which demonstrates the importance of studying the AHE in small exfoliated crystals, less affected by crystalline defects. Interestingly, the corresponding anomalous Hall conductance, when normalized to the number of contributing atomic planes, is $\sim \, 0.6 \; e^2/h$ per layer, approaching the value expected for the quantized anomalous Hall effect. The observed strong anisotropy of transport and the very large anomalous Hall conductance per layer make the properties of Co$_{1/3}$NbS$_2$ compatible with the presence of partially filled topologically non-trivial 2D bands originating from the magnetic superstructure of the antiferromagnetic state. Isolating atomically thin layers of this material and controlling their charge density may therefore provide a viable route to reveal the occurrence of the quantized AHE in a 2D AFM. △ Less

Submitted 23 April, 2020; v1 submitted 19 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Research 2, 023051 (2020)

Flip** exciton angular momentum with chiral phonons in MoSe$_2$/WSe$_2$ heterobilayers

Authors: A. Delhomme, D. Vaclavkova, A. Slobodeniuk, M. Orlita, M. Potemski, D. M. Basko, K. Watanabe, T. Taniguchi, D. Mauro, C. Barreteau, E. Giannini, A. F. Morpurgo, N. Ubrig, C. Faugeras

Abstract: Identifying quantum numbers to label elementary excitations is essential for the correct description of light-matter interaction in solids. In monolayer semiconducting transition metal dichalcogenides (TMDs) such as MoSe$_2$ or WSe$_2$, most optoelectronic phenomena are described well by labelling electron and hole states with the spin projection along the normal to the layer (S$_z$). In contrast,… ▽ More Identifying quantum numbers to label elementary excitations is essential for the correct description of light-matter interaction in solids. In monolayer semiconducting transition metal dichalcogenides (TMDs) such as MoSe$_2$ or WSe$_2$, most optoelectronic phenomena are described well by labelling electron and hole states with the spin projection along the normal to the layer (S$_z$). In contrast, for WSe$_2$/MoSe$_2$ interfaces recent experiments show that taking S$_z$ as quantum number is not a good approximation, and spin mixing needs to be always considered. Here we argue that the correct quantum number for these systems is not S$_z$, but the $z$-component of the total angular momentum -- J$_z$ = L$_z$ + S$_z$ -- associated to the C$_3$ rotational lattice symmetry, which assumes half-integer values corresponding modulo 3 to distinct states. We validate this conclusion experimentally through the observation of strong intervalley scattering mediated by chiral optical phonons that -- despite carrying angular momentum 1 -- cause resonant intervalley transitions of excitons, with an angular momentum difference of 2. △ Less

Submitted 27 February, 2020; originally announced February 2020.

Comments: are welcome

Journal ref: 2D Materials 7 041002 (2020)

Synthetic Semimetals with van der Waals Interfaces

Authors: Bojja Aditya Reddy, Evgeniy Ponomarev, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Céline Barreteau, Enrico Giannini, Alberto F. Morpurgo

Abstract: The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to produce artificial systems with engineered electronic properties. Here, we apply this strategy to realize synthetic semimetals based on vdW interfaces formed by two different semiconductors. Guided by existing ab-initio calculations, we select WSe$_2$ and SnSe$_2$ mono and multilayers to assemble vd… ▽ More The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to produce artificial systems with engineered electronic properties. Here, we apply this strategy to realize synthetic semimetals based on vdW interfaces formed by two different semiconductors. Guided by existing ab-initio calculations, we select WSe$_2$ and SnSe$_2$ mono and multilayers to assemble vdW interfaces, and demonstrate the occurrence of semimetallicity by means of different transport experiments. Semimetallicity manifests itself in a finite minimum conductance upon swee** the gate over a large range in ionic liquid gated devices, which also offer spectroscopic capabilities enabling the quantitative determination of the band overlap. The semimetallic state is additionally revealed in Hall effect measurements by the coexistence of electrons and holes, observed by either looking at the evolution of the Hall slope with swee** the gate voltage or with lowering temperature. Finally, semimetallicity results in the low-temperature metallic conductivity of interfaces of two materials that are themselves insulating. These results demonstrate the possibility to implement a state of matter that had not yet been realized in vdW interfaces, and represent a first step towards using these interfaces to engineer topological or excitonic insulating states. △ Less

Submitted 27 January, 2020; originally announced January 2020.

Journal ref: Nano Lett. 2019

Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics

Authors: Nicolas Ubrig, Evgeniy Ponomarev, Johanna Zultak, Daniil Domaretskiy, Viktor Zólyomi, Daniel Terry, James Howarth, Ignacio Gutiérrez-Lezama, Alexander Zhukov, Zakhar R. Kudrynskyi, Zakhar D. Kovalyuk, Amalia Patanè, Takashi Taniguchi, Kenji Watanabe, Roman V. Gorbachev, Vladimir I. Fal'ko, Alberto F. Morpurgo

Abstract: Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stems from the possibility to tailor the spectral response over a broad range by exploiting interlayer transitions between different compounds with an app… ▽ More Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stems from the possibility to tailor the spectral response over a broad range by exploiting interlayer transitions between different compounds with an appropriate band-edge alignment. For the interlayer transitions to be radiative, however, a serious challenge comes from details of the materials --such as lattice mismatch or even a small misalignment of the constituent layers-- that can drastically suppress the electron-photon coupling. The problem was evidenced in recent studies of heterostructures of monolayer transition metal dichalcogenides, whose band edges are located at the K-point of reciprocal space. Here we demonstrate experimentally that the solution to the interlayer coupling problem is to engineer type-II interfaces by assembling atomically thin crystals that have the bottom of the conduction band and the top of the valence band at the $Γ$-point, thus avoiding any momentum mismatch. We find that this type of vdW interfaces exhibits radiative optical transition irrespective of lattice constant, rotational/translational alignment of the two layers, or whether the constituent materials are direct or indirect gap semiconductors. The result, which is robust and of general validity, drastically broadens the scope of future optoelectronics device applications based on 2D materials. △ Less

Submitted 4 February, 2020; v1 submitted 21 December, 2019; originally announced December 2019.

Journal ref: Nature Materials (2020)

Band filling and cross quantum capacitance in ion gated semiconducting transition metal dichalcogenide monolayers

Authors: Hai**g Zhang, Christophe Berthod, Helmuth Berger, Thierry Giamarchi, Alberto F. Morpurgo

Abstract: Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) are used to study a rich variety of extremely interesting physical phenomena, but important aspects of how charge carriers are accumulated in these systems are not understood. We address these issues by means of a systematic experimental study of transport in monolayer MoSe$_2$ and WS… ▽ More Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) are used to study a rich variety of extremely interesting physical phenomena, but important aspects of how charge carriers are accumulated in these systems are not understood. We address these issues by means of a systematic experimental study of transport in monolayer MoSe$_2$ and WSe$_2$ as a function of magnetic field and gate voltage, exploring accumulated densities of carriers ranging from approximately 10$^{14}$ cm$^{-2}$ holes in the valence band to 4x10$^{14}$ cm$^{-2}$ electrons in the conduction band. We identify the conditions when the chemical potential enters different valleys in the monolayer band structure (the K and Q valley in the conduction band and the two spin-split K-valleys in the valence band) and find that an independent electron picture describes the occupation of states well. Unexpectedly, however, the experiments show very large changes in the device capacitance when multiple valleys are occupied that are not at all compatible with the commonly expected quantum capacitance contribution of these systems, $\textit{C}$$_Q$=$\textit{e}^2$/(d$μ$/d$\textit{n}$). This unexpected behavior is attributed to the presence of a cross quantum capacitance, which originates from screening of the electric field generated by charges on one plate from charges sitting on the other plate. Our findings therefore reveal an important contribution to the capacitance of physical systems that had been virtually entirely neglected until now. (short abstract due to size limitations - full abstract in the manuscript) △ Less

Submitted 16 December, 2019; originally announced December 2019.

Comments: 5 figures

Journal ref: Nano Lett. 2019, 19, 8836-8845

Determining the phase diagram of atomically thin layered antiferromagnet CrCl$_3$

Authors: Zhe Wang, Marco Gibertini, Dumitru Dumcenco, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Alberto F. Morpurgo

Abstract: Changes in the spin configuration of atomically-thin, magnetic van-der-Waals multilayers can cause drastic modifications in their opto-electronic properties. Conversely, the opto-electronic response of these systems provides information about the magnetic state, very difficult to obtain otherwise. Here we show that in CrCl$_3$ multilayers, the dependence of the tunnelling conductance on applied ma… ▽ More Changes in the spin configuration of atomically-thin, magnetic van-der-Waals multilayers can cause drastic modifications in their opto-electronic properties. Conversely, the opto-electronic response of these systems provides information about the magnetic state, very difficult to obtain otherwise. Here we show that in CrCl$_3$ multilayers, the dependence of the tunnelling conductance on applied magnetic field ($H$), temperature ($T$), and number of layers ($N$) tracks the evolution of the magnetic state, enabling the magnetic phase diagram of these systems to be determined experimentally. Besides a high-field spin-flip transition occurring for all thicknesses, the in-plane magnetoconductance exhibits an even-odd effect due to a low-field spin-flop transition. If the layer number $N$ is even, the transition occurs at $μ_0 H \sim 0$ T due to the very small in-plane magnetic anisotropy, whereas for odd $N$ the net magnetization of the uncompensated layer causes the transition to occur at finite $H$. Through a quantitative analysis of the phenomena, we determine the interlayer exchange coupling as well as the staggered magnetization, and show that in CrCl$_3$ shape anisotropy dominates. Our results reveal the rich behaviour of atomically-thin layered antiferromagnets with weak magnetic anisotropy. △ Less

Submitted 11 November, 2019; originally announced November 2019.

Comments: 10 pages, 5 figures (supplementary information as ancillary file)

Journal ref: Nat. Nanotechnol. 14, 1116 (2019)

Spin-flop transition in atomically thin MnPS$_3$ crystals

Authors: Gen Long, Hugo Henck, Marco Gibertini, Dumitru Dumcenco, Zhe Wang, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Alberto F. Morpurgo

Abstract: The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI$_3$ and CrCl$_3$ can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field ($H$) and temperature ($T$). This is possible because the tunneling magnetoresistance originates from a spin-filtering effect sensitive to the relative orientation of the magnetization in d… ▽ More The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI$_3$ and CrCl$_3$ can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field ($H$) and temperature ($T$). This is possible because the tunneling magnetoresistance originates from a spin-filtering effect sensitive to the relative orientation of the magnetization in different layers, i.e., to the magnetic state of the multilayers. For systems in which antiferromagnetism occurs within an individual layer, however, no spin-filtering occurs: it is unclear whether this strategy can work. To address this issue, we investigate tunnel transport through atomically thin crystals of MnPS$_3$, a van der Waals semiconductor that in the bulk exhibits easy-axis antiferromagnetic order within the layers. For thick multilayers below $T\simeq 78$ K, a $T$-dependent magnetoresistance sets-in at $\sim 5$ T, and is found to track the boundary between the antiferromagnetic and the spin-flop phases known from bulk magnetization measurements. The magnetoresistance persists down to individual MnPS$_3$ monolayers with nearly unchanged characteristic temperature and magnetic field scales, albeit with a different dependence on $H$. We discuss the implications of these finding for the magnetic state of atomically thin MnPS$_3$ crystals, conclude that antiferromagnetic correlations persist down to the level of individual monolayers, and that tunneling magnetoresistance does allow magnetism in 2D insulating materials to be detected even in the absence of spin-filtering. △ Less

Submitted 29 October, 2019; originally announced October 2019.

Comments: 19 pages, 4 figures + supplementary (10 pages, 5 figures)

Journal ref: Nano Lett. 20, 2452-2459 (2020)

Multi-frequency Shubnikov-de Haas oscillations in topological semimetal Pt$_2$HgSe$_3$

Authors: Diego Mauro, Hugo Henck, Marco Gibertini, Michele Filippone, Enrico Giannini, Ignacio Gutierrez-Lezama, Alberto F. Morpurgo

Abstract: Monolayer jacutingaite (Pt$_2$HgSe$_3$) has been recently identified as a candidate quantum spin Hall system with a 0.5 eV band gap, but no transport measurements have been performed so far on this material, neither in monolayer nor in the bulk. By using a dedicated high-pressure technique, we grow crystals enabling the exfoliation of 50-100 nm thick layers and the realization of devices for contr… ▽ More Monolayer jacutingaite (Pt$_2$HgSe$_3$) has been recently identified as a candidate quantum spin Hall system with a 0.5 eV band gap, but no transport measurements have been performed so far on this material, neither in monolayer nor in the bulk. By using a dedicated high-pressure technique, we grow crystals enabling the exfoliation of 50-100 nm thick layers and the realization of devices for controlled transport experiments. Magnetoresistance measurements indicate that jacutingaite is a semimetal, exhibiting Shubnikov-de Haas (SdH) resistance oscillations with a multi-frequency spectrum. We adapt the Lifshitz-Kosevich formula to analyze quantitatively the SdH resistance oscillations in the presence of multiple frequencies, and find that the experimental observations are overall reproduced well by band structure ab-initio calculations for bulk jacutingaite. Together with the relatively high electron mobility extracted from the experiments ($\approx 2000$ cm$^2$/Vs, comparable to what is observed in WTe$_2$ crystals of the same thickness), our results indicate that monolayer jacutingaite should provide an excellent platform to investigate transport in 2D quantum spin Hall systems. △ Less

Submitted 28 May, 2020; v1 submitted 29 October, 2019; originally announced October 2019.

Comments: 11 pages, 4 figures + supplementary (3 pages, 2 figures)

Journal ref: 2D Materials, 7, 025042 (2020)

Magnetic 2D materials and heterostructures

Authors: M. Gibertini, M. Koperski, A. F. Morpurgo, K. S. Novoselov

Abstract: The family of 2D materials grows day by day, drastically expanding the scope of possible phenomena to be explored in two dimensions, as well as the possible van der Waals heterostructures that one can create. Such 2D materials currently cover a vast range of properties. Until recently, this family has been missing one crucial member - 2D magnets. The situation has changed over the last two years w… ▽ More The family of 2D materials grows day by day, drastically expanding the scope of possible phenomena to be explored in two dimensions, as well as the possible van der Waals heterostructures that one can create. Such 2D materials currently cover a vast range of properties. Until recently, this family has been missing one crucial member - 2D magnets. The situation has changed over the last two years with the introduction of a variety of atomically-thin magnetic crystals. Here we will discuss the difference between magnetic states in 2D materials and in bulk crystals and present an overview of the 2D magnets that have been explored recently. We will focus, in particular, on the case of the two most studied systems - semiconducting CrI$_3$ and metallic Fe$_3$GeTe$_2$ - and illustrate the physical phenomena that have been observed. Special attention will be given to the range of novel van der Waals heterostructures that became possible with the appearance of 2D magnets, offering new perspectives in this rapidly expanding field. △ Less

Submitted 8 October, 2019; originally announced October 2019.

Journal ref: Nature Nanotechnology 14, 408-419 (2019)

Low-temperature monoclinic layer stacking in atomically thin CrI$_3$ crystals

Authors: Nicolas Ubrig, Zhe Wang, Jérémie Teyssier, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Alberto F. Morpurgo, Marco Gibertini

Abstract: Chromium triiodide, CrI$_3$, is emerging as a promising magnetic two-dimensional semiconductor where spins are ferromagnetically aligned within a single layer. Potential applications in spintronics arise from an antiferromagnetic ordering between adjacent layers that gives rise to spin filtering and a large magnetoresistance in tunnelling devices. This key feature appears only in thin multilayers… ▽ More Chromium triiodide, CrI$_3$, is emerging as a promising magnetic two-dimensional semiconductor where spins are ferromagnetically aligned within a single layer. Potential applications in spintronics arise from an antiferromagnetic ordering between adjacent layers that gives rise to spin filtering and a large magnetoresistance in tunnelling devices. This key feature appears only in thin multilayers and it is not inherited from bulk crystals, where instead neighbouring layers share the same ferromagnetic spin orientation. This discrepancy between bulk and thin samples is unexpected, as magnetic ordering between layers arises from exchange interactions that are local in nature and should not depend strongly on thickness. Here we solve this controversy and show through polarization resolved Raman spectroscopy that thin multilayers do not undergo a structural phase transition typical of bulk crystals. As a consequence, a different stacking pattern is present in thin and bulk samples at the temperatures at which magnetism sets in and, according to previous first-principles simulations, this results in a different interlayer magnetic ordering. Our experimental findings provide evidence for the strong interplay between stacking order and magnetism in CrI$_3$, opening interesting perspectives to design the magnetic state of van der Waals multilayers. △ Less

Submitted 26 August, 2019; originally announced August 2019.

Comments: 7 pages, 3 figures

Scanning Tunneling Microscopy of an Air Sensitive Dichalcogenide Through an Encapsulating Layer

Authors: Jose Martinez-Castro, Diego Mauro, Árpád Pásztor, Ignacio Gutiérrez-Lezama, Alessandro Scarfato, Alberto F. Morpurgo, Christoph Renner

Abstract: Many atomically thin exfoliated 2D materials degrade when exposed to ambient conditions. They can be protected and investigated by means of transport and optical measurements if they are encapsulated between chemically inert single layers in the controlled atmosphere of a glove box. Here, we demonstrate that the same encapsulation procedure is also compatible with scanning tunneling microscopy (ST… ▽ More Many atomically thin exfoliated 2D materials degrade when exposed to ambient conditions. They can be protected and investigated by means of transport and optical measurements if they are encapsulated between chemically inert single layers in the controlled atmosphere of a glove box. Here, we demonstrate that the same encapsulation procedure is also compatible with scanning tunneling microscopy (STM) and spectroscopy (STS). To this end, we report a systematic STM/STS investigation of a model system consisting of an exfoliated 2H-NbSe2 crystal capped with a protective 2H-MoS2 monolayer. We observe different electronic coupling between MoS2 and NbSe2, from a strong coupling when their lattices are aligned within a few degrees to 2 essentially no coupling for 30° misaligned layers. We show that STM always probes intrinsic NbSe2 properties such as the superconducting gap and charge density wave at low temperature when setting the tunneling bias inside the MoS2 band gap, irrespective of the relative angle between the NbSe2 and MoS2 lattices. This study demonstrates that encapsulation is fully compatible with STM/STS investigations of 2D materials. △ Less

Submitted 13 February, 2019; originally announced February 2019.

Comments: 19 pages, 5 figures

Journal ref: Nano Letters 18,(2018)6696-6702

Probing magnetism in 2D materials at the nanoscale with single spin microscopy

Authors: Lucas Thiel, Zhe Wang, Märta A. Tschudin, Dominik Rohner, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Marco Gibertini, Enrico Giannini, Alberto F. Morpurgo, Patrick Maletinsky

Abstract: The recent discovery of ferromagnetism in 2D van der Waals (vdw) crystals has generated widespread interest, owing to their potential for fundamental and applied research. Advancing the understanding and applications of vdw magnets requires methods to quantitatively probe their magnetic properties on the nanoscale. Here, we report the study of atomically thin crystals of the vdw magnet CrI$_3$ dow… ▽ More The recent discovery of ferromagnetism in 2D van der Waals (vdw) crystals has generated widespread interest, owing to their potential for fundamental and applied research. Advancing the understanding and applications of vdw magnets requires methods to quantitatively probe their magnetic properties on the nanoscale. Here, we report the study of atomically thin crystals of the vdw magnet CrI$_3$ down to individual monolayers using scanning single-spin magnetometry, and demonstrate quantitative, nanoscale imaging of magnetisation, localised defects and magnetic domains. We determine the magnetisation of CrI$_3$ monolayers to be $\approx16~μ_B/$nm$^2$ and find comparable values in samples with odd numbers of layers, whereas the magnetisation vanishes when the number of layers is even. We also establish that this inscrutable even-odd effect is intimately connected to the material structure, and that structural modifications can induce switching between ferro- and anti-ferromagnetic interlayer ordering. Besides revealing new aspects of magnetism in atomically thin CrI$_3$ crystals, these results demonstrate the power of single-spin scanning magnetometry for the study of magnetism in 2D vdw magnets. △ Less

Submitted 4 February, 2019; originally announced February 2019.

Comments: Questions and comments are welcome. For further information and related job-openings, please visit www.quantum-sensing.ch

Journal ref: Science 364, 973-976 (2019)

Enhanced electron-phonon interaction in multi-valley materials

Authors: Evgeniy Ponomarev, Thibault Sohier, Marco Gibertini, Helmuth Berger, Nicola Marzari, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: Through a combined theoretical and experimental effort, we uncover a yet unidentified mechanism that strengthens considerably electron-phonon coupling in materials where electron accumulation leads to population of multiple valleys. Taking atomically-thin transition-metal dichalcogenides as prototypical examples, we establish that the mechanism results from a phonon-induced out-of-phase energy shi… ▽ More Through a combined theoretical and experimental effort, we uncover a yet unidentified mechanism that strengthens considerably electron-phonon coupling in materials where electron accumulation leads to population of multiple valleys. Taking atomically-thin transition-metal dichalcogenides as prototypical examples, we establish that the mechanism results from a phonon-induced out-of-phase energy shift of the different valleys, which causes inter-valley charge transfer and reduces the effectiveness of electrostatic screening, thus enhancing electron-phonon interactions. The effect is physically robust, it can play a role in many materials and phenomena, as we illustrate by discussing experimental evidence for its relevance in the occurrence of superconductivity. (short abstract due to size limitations - full abstract in the manuscript) △ Less

Submitted 23 January, 2019; originally announced January 2019.

Comments: 16 pages, 8 figures

Journal ref: Phys. Rev. X 9, 031019 (2019)

A Family of Finite-Temperature Electronic Phase Transitions in Graphene Multilayers

Authors: Youngwoo Nam, Dong-Keun Ki, David Soler-Delgado, Alberto F. Morpurgo

Abstract: Suspended Bernal-stacked graphene multilayers up to an unexpectedly large thickness exhibit a broken-symmetry ground state, whose origin remains to be understood. Here we show that a finite-temperature second order phase transition occurs in multilayers whose critical temperature Tc increases from 12 K in bilayers to 100 K in heptalayers. A comparison of the data to a phenomenological model inspir… ▽ More Suspended Bernal-stacked graphene multilayers up to an unexpectedly large thickness exhibit a broken-symmetry ground state, whose origin remains to be understood. Here we show that a finite-temperature second order phase transition occurs in multilayers whose critical temperature Tc increases from 12 K in bilayers to 100 K in heptalayers. A comparison of the data to a phenomenological model inspired by a mean field approach suggests that the transition is associated with the appearance of a self-consistent valley- and spin-dependent staggered potential changing sign from one layer to the next, appearing at Tc and increasing upon cooling. The systematic evolution with thickness of several measured quantities imposes constraints on any microscopic theory aiming to analyze the nature of electronic correlations in this system. △ Less

Submitted 26 November, 2018; originally announced November 2018.

Journal ref: Science 362, 324(2018)

Microfocus laser-ARPES on encapsulated mono-, bi-, and few-layer 1T'-WTe$_2$

Authors: Irène Cucchi, Ignacio Gutiérrez-Lezama, Edoardo Cappelli, Siobhan McKeown Walker, Flavio Y. Bruno, Giulia Tenasini, Lin Wang, Nicolas Ubrig, Céline Barreteau, Enrico Giannini, Marco Gibertini, Anna Tamai, Alberto F. Morpurgo, Felix Baumberger

Abstract: Two-dimensional crystals of semimetallic van der Waals materials hold much potential for the realization of novel phases, as exemplified by the recent discoveries of a polar metal in few layer 1T'-WTe$_2$ and of a quantum spin Hall state in monolayers of the same material. Understanding these phases is particularly challenging because little is known from experiment about the momentum space electr… ▽ More Two-dimensional crystals of semimetallic van der Waals materials hold much potential for the realization of novel phases, as exemplified by the recent discoveries of a polar metal in few layer 1T'-WTe$_2$ and of a quantum spin Hall state in monolayers of the same material. Understanding these phases is particularly challenging because little is known from experiment about the momentum space electronic structure of ultrathin crystals. Here, we report direct electronic structure measurements of exfoliated mono-, bi-, and few-layer 1T'-WTe$_2$ by laser-based micro-focus angle resolved photoemission. This is achieved by encapsulating with monolayer graphene a flake of WTe$_2$ comprising regions of different thickness. Our data support the recent identification of a quantum spin Hall state in monolayer 1T'-WTe$_2$ and reveal strong signatures of the broken inversion symmetry in the bilayer. We finally discuss the sensitivity of encapsulated samples to contaminants following exposure to ambient atmosphere. △ Less

Submitted 12 November, 2018; originally announced November 2018.

Comments: 14 pages, 5 figures

Lithium-ion conducting glass ceramics for electrostatic gating

Authors: Marc Philippi, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: We explore solid electrolytes for electrostatic gating using field-effect transistors (FETs) in which thin WSe$_2$ crystals are exfoliated and transferred onto a lithium-ion conducting glass ceramic substrate. For negative gate voltages ($V_G < 0$) the devices work equally well as ionic liquid gated FETs while offering specific advantages, whereas no transistor action is seen for $V_G>0$. For… ▽ More We explore solid electrolytes for electrostatic gating using field-effect transistors (FETs) in which thin WSe$_2$ crystals are exfoliated and transferred onto a lithium-ion conducting glass ceramic substrate. For negative gate voltages ($V_G < 0$) the devices work equally well as ionic liquid gated FETs while offering specific advantages, whereas no transistor action is seen for $V_G>0$. For $V_G <0$ the devices can nevertheless be driven into the ambipolar injection regime by applying a large source-drain bias, and strong electroluminescence is observed when direct band-gap WSe$_2$ monolayers are used. Detecting and imaging the emitted light is much simpler in these FETs as compared to ionic liquid gated transistors, because the semiconductor surface is exposed (i.e., not covered by another material). Our results show that solid electrolytes are complementary to existing liquid gates, as they enable experiments not possible when the semiconductor is buried under the liquid itself. △ Less

Submitted 24 July, 2018; originally announced July 2018.

Journal ref: Appl. Phys. Lett. 113, 033502 (2018)

Semiconducting van der Waals Interfaces as Artificial Semiconductors

Authors: Evgeniy Ponomarev, Nicolas Ubrig, Ignacio Gutiérrez-Lezama, Helmuth Berger, Alberto F. Morpurgo

Abstract: Recent technical progress demonstrates the possibility of stacking together virtually any combination of atomically thin crystals of van der Waals bonded compounds to form new types of heterostructures and interfaces. As a result, there is the need to understand at a quantitative level how the interfacial properties are determined by the properties of the constituent 2D materials. We address this… ▽ More Recent technical progress demonstrates the possibility of stacking together virtually any combination of atomically thin crystals of van der Waals bonded compounds to form new types of heterostructures and interfaces. As a result, there is the need to understand at a quantitative level how the interfacial properties are determined by the properties of the constituent 2D materials. We address this problem by studying the transport and optoelectronic response of two different interfaces based on transition-metal dichalcogenide monolayers, namely WSe2-MoSe2 and WSe2-MoS2. By exploiting the spectroscopic capabilities of ionic liquid gated transistors, we show how the conduction and valence bands of the individual monolayers determine the bands of the interface, and we establish quantitatively (directly from the measurements) the energetic alignment of the bands in the different materials as well as the magnitude of the interfacial band gap. Photoluminescence and photocurrent measurements allow us to conclude that the band gap of the WSe2-MoSe2 interface is direct in k space, whereas the gap of WSe2/MoS2 is indirect. For WSe2/MoSe2, we detect the light emitted from the decay of interlayer excitons and determine experimentally their binding energy using the values of the interfacial band gap extracted from transport measurements. The technique that we employed to reach this conclusion demonstrates a rather-general strategy for characterizing quantitatively the interfacial properties in terms of the properties of the constituent atomic layers. The results presented here further illustrate how van der Waals interfaces of two distinct 2D semiconducting materials are composite systems that truly behave as artificial semiconductors, the properties of which can be deterministically defined by the selection of the appropriate constituent semiconducting monolayers. △ Less

Submitted 22 July, 2018; originally announced July 2018.

Comments: Nano Letters 2018

Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures

Authors: Zhe Wang, Deepak Sapkota, Takashi Taniguchi, Kenji Watanabe, David Mandrus, Alberto F. Morpurgo

Abstract: Thin van der Waals (vdW) layered magnetic materials disclose the possibility to realize vdW heterostructures with new functionalities. Here we report on the realization and investigation of tunneling spin valves based on van der Waals heterostructures consisting of an atomically thin hBN layer acting as tunnel barrier and two exfoliated Fe3GeTe2 crystals acting as ferromagnetic electrodes. Low-tem… ▽ More Thin van der Waals (vdW) layered magnetic materials disclose the possibility to realize vdW heterostructures with new functionalities. Here we report on the realization and investigation of tunneling spin valves based on van der Waals heterostructures consisting of an atomically thin hBN layer acting as tunnel barrier and two exfoliated Fe3GeTe2 crystals acting as ferromagnetic electrodes. Low-temperature anomalous Hall effect measurements show that thin Fe3GeTe2 crystals are metallic ferromagnets with an easy axis perpendicular to the layers, and a very sharp magnetization switching at magnetic field values that depend slightly on their geometry. In Fe3GeTe2/hBN/Fe3GeTe2 heterostructures, we observe a textbook behavior of the tunneling resistance, which is minimum (maximum) when the magnetization in the two electrodes is parallel (antiparallel) to each other. The magnetoresistance is 160% at low temperature, from which we determine the spin polarization of Fe3GeTe2 to be 0.66, corresponding to 83% and 17% of majority and minority carriers, respectively. The measurements also show that, with increasing temperature, the evolution of the spin polarization extracted from the tunneling magnetoresistance is proportional to the temperature dependence of the magnetization extracted from the analysis of the anomalous Hall conductivity. This suggests that the magnetic properties of the surface are representative of those of the bulk, as it may be expected for vdW materials. △ Less

Submitted 14 June, 2018; originally announced June 2018.

Comments: 4 figures

Journal ref: Nano Letters (2018)

Tunneling spectroscopy of gate-induced superconductivity in MoS$_2$

Authors: Davide Costanzo, Hai**g Zhang, Bojja Aditya Reddy, Helmuth Berger, Alberto F. Morpurgo

Abstract: The ability to gate-induce superconductivity by electrostatic charge accumulation is a recent breakthrough in physics and nano-electronics. With the exception of LaAlO$_3$/SrTiO$_3$ interfaces, experiments on gate-induced superconductors have been largely confined to resistance measurements, which provide very limited information about the superconducting state. Here, we explore gate-induced super… ▽ More The ability to gate-induce superconductivity by electrostatic charge accumulation is a recent breakthrough in physics and nano-electronics. With the exception of LaAlO$_3$/SrTiO$_3$ interfaces, experiments on gate-induced superconductors have been largely confined to resistance measurements, which provide very limited information about the superconducting state. Here, we explore gate-induced superconductivity in MoS$_2$ by performing tunneling spectroscopy to determine the energy-dependent density of states (DOS) for different levels of electron density $\textit{n}$. In the superconducting state, the DOS is strongly suppressed at energy smaller than the gap, Δ, which is maximum (Δ~ 2 meV) for $\textit{n}$ of ~ 10$^{14}$ cm$^{-2}$ and decreases monotonously for larger $\textit{n}$. A perpendicular magnetic field $\textit{B}$ generates states at $E<Δ$ that fill the gap, but a 20% DOS suppression of superconducting origin unexpectedly persists much above the transport critical field. Conversely, an in-plane field up to 10 T leaves the DOS entirely unchanged. Our measurements exclude that the superconducting state in MoS$_2$ is fully gapped and reveal the presence of a DOS that vanishes linearly with energy, the explanation of which requires going beyond a conventional, purely phonon-driven Bardeen-Cooper-Schrieffer mechanism. △ Less

Submitted 8 June, 2018; originally announced June 2018.

Journal ref: Nature Nanotechnology 13, 483-488, 2018

Hole Transport in Exfoliated Monolayer MoS$_2$

Authors: Evgeniy Ponomarev, Árpád Pásztor, Adrien Waelchli, Alessandro Scarfato, Nicolas Ubrig, Christoph Renner, Alberto F. Morpurgo

Abstract: Ideal monolayers of common semiconducting transition metal dichalcogenides (TMDCs) such as MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$ possess many similar electronic properties. As it is the case for all semiconductors, however, the physical response of these systems is strongly determined by defects in a way specific to each individual compound. Here we investigate the ability of exfoliated monolayer… ▽ More Ideal monolayers of common semiconducting transition metal dichalcogenides (TMDCs) such as MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$ possess many similar electronic properties. As it is the case for all semiconductors, however, the physical response of these systems is strongly determined by defects in a way specific to each individual compound. Here we investigate the ability of exfoliated monolayers of these TMDCs to support high-quality, well-balanced ambipolar conduction, which has been demonstrated for WS$_2$, MoSe$_2$, and WSe$_2$, but not for MoS$_2$. Using ionic-liquid gated transistors we show that, contrary to WS$_2$, MoSe$_2$, and WSe$_2$, hole transport in exfoliated MoS$_2$ monolayers is systematically anomalous, exhibiting a maximum in conductivity at negative gate voltage (V$_G$) followed by a suppression of up to 100 times upon further increasing V$_G$. To understand the origin of this difference we have performed a series of experiments including the comparison of hole transport in MoS$_2$ monolayers and thicker multilayers, in exfoliated and CVD-grown monolayers, as well as gate-dependent optical measurements (Raman and photoluminescence) and scanning tunneling imaging and spectroscopy. In agreement with existing {\it ab-initio} calculations, the results of all these experiments are consistently explained in terms of defects associated to chalcogen vacancies that only in MoS$_2$ monolayers -- but not in thicker MoS$_2$ multilayers nor in monolayers of the other common semiconducting TMDCs -- create in-gap states near the top of the valence band that act as strong hole traps. Our results demonstrate the importance of studying systematically how defects determine the properties of 2D semiconducting materials and of develo** methods to control them. △ Less

Submitted 24 April, 2018; originally announced April 2018.

Journal ref: ACS Nano, 2018, 12 (3), pp 2669-2676

Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI$_3$

Authors: Zhe Wang, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Martin Kroner, Marco Gibertini, Takashi Taniguchi, Kenji Watanabe, Ataç Imamoğlu, Enrico Giannini, Alberto F. Morpurgo

Abstract: Magnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3. Of particular interest in semiconductors is the interplay between magnetism and transport, which has remained unexplored. Here we report first magneto-transport measurements on exfoliated CrI3 crysta… ▽ More Magnetic layered van der Waals crystals are an emerging class of materials giving access to new physical phenomena, as illustrated by the recent observation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3. Of particular interest in semiconductors is the interplay between magnetism and transport, which has remained unexplored. Here we report first magneto-transport measurements on exfoliated CrI3 crystals. We find that tunneling conduction in the direction perpendicular to the crystalline planes exhibits a magnetoresistance as large as 10 000 %. The evolution of the magnetoresistance with magnetic field and temperature reveals that the phenomenon originates from multiple transitions to different magnetic states, whose possible microscopic nature is discussed on the basis of all existing experimental observations. This observed dependence of the conductance of a tunnel barrier on its magnetic state is a new phenomenon that demonstrates the presence of a strong coupling between transport and magnetism in magnetic van der Waals semiconductors. △ Less

Submitted 28 June, 2018; v1 submitted 24 January, 2018; originally announced January 2018.

Journal ref: Nature Communications (2018)

On-Demand Spin-Orbit Interaction from Which-Layer Tunability in Bilayer Graphene

Authors: Jun Yong Khoo, Alberto F. Morpurgo, Leonid Levitov

Abstract: Spin-orbit interaction (SOI) that is gate-tunable over a broad range is essential to exploiting novel spin phenomena. Achieving this regime has remained elusive because of the weakness of the underlying relativistic coupling and lack of its tunability in solids. Here we outline a general strategy that enables exceptionally high tunability of SOI through creating a which-layer spin-orbit field inho… ▽ More Spin-orbit interaction (SOI) that is gate-tunable over a broad range is essential to exploiting novel spin phenomena. Achieving this regime has remained elusive because of the weakness of the underlying relativistic coupling and lack of its tunability in solids. Here we outline a general strategy that enables exceptionally high tunability of SOI through creating a which-layer spin-orbit field inhomogeneity in graphene multilayers. An external transverse electric field is applied to shift carriers between the layers with strong and weak SOI. Because graphene layers are separated by sub-nm scales, exceptionally high tunability of SOI can be achieved through a minute carrier displacement. A detailed analysis of the experimentally relevant case of bilayer graphene on a semiconducting transition metal dichalchogenide substrate is presented. In this system, a complete tunability of SOI amounting to its ON/OFF switching can be achieved. New opportunities for spin control are exemplified with electrically driven spin resonance and topological phases with different quantized intrinsic valley Hall conductivities. △ Less

Submitted 12 November, 2017; originally announced November 2017.

Comments: 8 pages, 3 figures

Journal ref: Nano Lett. 17 (11), pp 7003-7008 (2017)

Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength Dependent Map**

Authors: Nicolas Ubrig, Sanghyun Jo, Marc Philippi, Davide Costanzo, Helmuth Berger, Alexey B. Kuzmenko, Alberto F. Morpurgo

Abstract: The band structure of many semiconducting monolayer transition metal dichalcogenides (TMDs) possesses two degenerate valleys, with equal and opposite Berry curvature. It has been predicted that, when illuminated with circularly polarized light, interband transitions generate an unbalanced non-equilibrium population of electrons and holes in these valleys, resulting in a finite Hall voltage at zero… ▽ More The band structure of many semiconducting monolayer transition metal dichalcogenides (TMDs) possesses two degenerate valleys, with equal and opposite Berry curvature. It has been predicted that, when illuminated with circularly polarized light, interband transitions generate an unbalanced non-equilibrium population of electrons and holes in these valleys, resulting in a finite Hall voltage at zero magnetic field when a current flows through the system. This is the so-called valley Hall effect that has recently been observed experimentally. Here, we show that this effect is mediated by photo-generated neutral excitons and charged trions, and not by inter-band transitions generating independent electrons and holes. We further demonstrate an experimental strategy, based on wavelength dependent spatial map** of the Hall voltage, which allows the exciton and trion contributions to the valley Hall effect to be discriminated in the measurement. These results represent a significant step forward in our understanding of the microscopic origin of photo-induced valley Hall effect in semiconducting transition metal dichalcogenides, and demonstrate experimentally that composite quasi-particles, such as trions, can also possess a finite Berry curvature. △ Less

Submitted 31 August, 2017; v1 submitted 23 August, 2017; originally announced August 2017.

Comments: accepted for publication in Nano Letters

Journal ref: Nano Lett., 17 (9), pp 5719-5725 (2017)

Controlling the topological sector of magnetic solitons in exfoliated Cr$_{1/3}$NbS$_2$ crystals

Authors: L. Wang, N. Chepiga, D. -K. Ki, L. Li, F. Li, W. Zhu, Y. Kato, O. S. Ovchinnikova, F. Mila, I. Martin, D. Mandrus, A. F. Morpurgo

Abstract: We investigate manifestations of topological order in monoaxial helimagnet Cr$_{1/3}$NbS$_2$ by performing transport measurements on ultra-thin crystals. Upon swee** the magnetic field perpendicularly to the helical axis, crystals thicker than one helix pitch (48 nm) but much thinner than the magnetic domain size ($\sim$1 $μ$m) are found to exhibit sharp and hysteretic resistance jumps. We show… ▽ More We investigate manifestations of topological order in monoaxial helimagnet Cr$_{1/3}$NbS$_2$ by performing transport measurements on ultra-thin crystals. Upon swee** the magnetic field perpendicularly to the helical axis, crystals thicker than one helix pitch (48 nm) but much thinner than the magnetic domain size ($\sim$1 $μ$m) are found to exhibit sharp and hysteretic resistance jumps. We show that these phenomena originate from transitions between topological sectors with different number of magnetic solitons. This is confirmed by measurements on crystals thinner than 48 nm --in which the topological sector cannot change-- that do not exhibit any jump or hysteresis. Our results show the ability to deterministically control the topological sector of finite-size Cr$_{1/3}$NbS$_2$ and to detect inter-sector transitions by transport measurements. △ Less

Submitted 10 April, 2017; originally announced April 2017.

Comments: 7 pages, 8 figures

Journal ref: Phys. Rev. Lett. 118, 257203 (2017)

Electron-hole collision limited transport in charge-neutral bilayer graphene

Authors: Youngwoo Nam, Dong-Keun Ki, David Soler-Delgado, Alberto F. Morpurgo

Abstract: Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon scattering. Here, we use suspended bilayer graphene devices to reveal a new regime, in which ballistic transport is not limited by scattering with phonons or impuriti… ▽ More Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon scattering. Here, we use suspended bilayer graphene devices to reveal a new regime, in which ballistic transport is not limited by scattering with phonons or impurities, but by electron-hole collisions. The phenomenon manifests itself in a negative four-terminal resistance that becomes visible when the density of holes (electrons) is suppressed by gate-shifting the Fermi level in the conduction (valence) band, above the thermal energy. For smaller densities transport is diffusive, and the measured conductivity is reproduced quantitatively, with no fitting parameters, by including electron-hole scattering as the only process causing velocity relaxation. Experiments on a trilayer device show that the phenomenon is robust and that transport at charge neutrality is governed by the same physics. Our results provide a textbook illustration of a transport regime that had not been observed previously and clarify the nature of conduction through charge-neutral graphene under conditions in which carrier density inhomogeneity is immaterial. They also demonstrate that transport can be limited by a fully electronic mechanism, originating from the same microscopic processes that govern the physics of Dirac-like plasmas. △ Less

Submitted 24 April, 2018; v1 submitted 15 March, 2017; originally announced March 2017.

Comments: Submitted

Journal ref: Nature Physics 13, 1207 (2017)

Interaction-induced insulating state in thick multilayer graphene

Authors: Youngwoo Nam, Dong-Keun Ki, Mikito Koshino, Edward McCann, Alberto F. Morpurgo

Abstract: Close to charge neutrality, the low-energy properties of high-quality suspended devices based on atomically thin graphene layers are determined by electron-electron interactions. Bernal-stacked layers, in particular, have shown a remarkable even-odd effect with mono- and tri-layers remaining gapless conductors, and bi- and tetra-layers becoming gapped insulators. These observations $-$at odds with… ▽ More Close to charge neutrality, the low-energy properties of high-quality suspended devices based on atomically thin graphene layers are determined by electron-electron interactions. Bernal-stacked layers, in particular, have shown a remarkable even-odd effect with mono- and tri-layers remaining gapless conductors, and bi- and tetra-layers becoming gapped insulators. These observations $-$at odds with the established notion that (Bernal) trilayers and thicker multilayers are semi-metals$-$ have resulted in the proposal of a physical scenario leading to a surprising prediction, namely that even-layered graphene multilayers remain insulating irrespective of their thickness. Here, we present data from two devices that conform ideally to this hypothesis, exhibiting the behavior expected for Bernal-stacked hexa and octalayer graphene. Despite their large thickness, these multilayers are insulating for carrier density |n|<2-3x10$^{10}$cm$^{-2}$, possess an energy gap of approximately 1.5 meV at charge neutrality (in virtually perfect agreement with what is observed in bi and tetra layer graphene) and exhibit the expected integer quantum Hall effect. These findings indicate the soundness of our basic insights on the effect of electron interactions in Bernal graphene multilayers, show that graphene multilayers exhibit unusual and interesting physics that remains to be understood, and pose ever more pressing questions as to the microscopic mechanisms behind the semimetallic behavior of bulk graphite. △ Less

Submitted 4 October, 2016; originally announced October 2016.

Comments: 22 pages, 6 figures, To appear in 2D Materials

Journal ref: 2D Mater. 3 (2016) 045014

Electroluminescence from indirect band gap semiconductor ReS$_2$

Authors: Ignacio Gutiérrez Lezama, Bojja Aditya Reddy, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: It has been recently claimed that bulk crystals of transition metal dichalcogenide (TMD) ReS$_2$ are direct band gap semiconductors, which would make this material an ideal candidate, among all TMDs, for the realization of efficient opto-electronic devices. The situation is however unclear, because even more recently an indirect transition in the photoluminescence spectra of this material has been… ▽ More It has been recently claimed that bulk crystals of transition metal dichalcogenide (TMD) ReS$_2$ are direct band gap semiconductors, which would make this material an ideal candidate, among all TMDs, for the realization of efficient opto-electronic devices. The situation is however unclear, because even more recently an indirect transition in the photoluminescence spectra of this material has been detected, whose energy is smaller than the supposed direct gap. To address this issue we exploit the properties of ionic liquid gated field-effect transistors (FETs) to investigate the gap structure of bulk ReS$_2$. Using these devices, whose high quality is demonstrated by a record high electron FET mobility of 1,100 cm$^2$/Vs at 4K, we can induce hole transport at the surface of the material and determine quantitatively the smallest band gap present in the material, irrespective of its direct or indirect nature. The value of the band gap is found to be 1.41 eV, smaller than the 1.5 eV direct optical transition but in good agreement with the energy of the indirect optical transition, providing an independent confirmation that bulk ReS$_2$ is an indirect band gap semiconductor. Nevertheless, contrary to the case of more commonly studied semiconducting TMDs (e.g., MoS$_2$, WS$_2$, etc.) in their bulk form, we also find that ReS$_2$ FETs fabricated on bulk crystals do exhibit electroluminescence when driven in the ambipolar injection regime, likely because the difference between the direct and indirect gap is only 100 meV. We conclude that ReS$_2$ does deserve more in-depth investigations in relation to possible opto-electronic applications. △ Less

Submitted 4 October, 2016; originally announced October 2016.

Comments: To appear in 2D Materials (19 pages, 4 Figures)

Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides

Authors: Zhe Wang, Dong-Keun Ki, Jun Yong Khoo, Diego Mauro, Helmuth Berger, Leonid S. Levitov, Alberto F. Morpurgo

Abstract: We use a combination of experimental techniques to demonstrate a general occurrence of spin-orbit interaction (SOI) in graphene on transition metal dichalcogenide (TMD) substrates. Our measurements indicate that SOI is ultra-strong and extremely robust, despite it being merely interfacially-induced, with neither graphene nor the TMD substrates changing their structure. This is found to be the case… ▽ More We use a combination of experimental techniques to demonstrate a general occurrence of spin-orbit interaction (SOI) in graphene on transition metal dichalcogenide (TMD) substrates. Our measurements indicate that SOI is ultra-strong and extremely robust, despite it being merely interfacially-induced, with neither graphene nor the TMD substrates changing their structure. This is found to be the case irrespective of the TMD material used, of the transport regime, of the carrier type in the graphene band, and of the thickness of the graphene multilayer. Specifically, we perform weak antilocalization measurements as the simplest and most general diagnostic of SOI, and show that the spin relaxation time is very short in all cases regardless of the elastic scattering time. Such a short spin-relaxation time strongly suggests that the SOI originates from a modification of graphene band structure. We confirmed this expectation by measuring a gate-dependent beating, and a corresponding frequency splitting, in the low-field Shubnikov-de Haas magneto-resistance oscillations in high quality bilayer graphene on WSe$_2$. These measurements provide an unambiguous diagnostic of a SOI-induced splitting in the electronic band structure, and their analysis allows us to determine the SOI coupling constants for the Rashba term and the so-called spin-valley coupling term, i.e., the terms that were recently predicted theoretically for interface-induced SOI in graphene. The magnitude of the SOI splitting is found to be on the order of 10 meV, more than 100 times greater than the SOI intrinsic to graphene. Both the band character of the interfacially induced SOI, as well as its robustness and large magnitude make graphene-on-TMD a promising system to realize and explore a variety of spin-dependent transport phenomena, such as, in particular, spin-Hall and valley-Hall topological insulating states. △ Less

Submitted 6 June, 2016; originally announced June 2016.

Comments: 14 pages, 8 figures

Journal ref: Phys. Rev. X 6, 041020 (2016)

Direct Observation of Long-range field-effect from gate tuning of non-local conductivity

Authors: Lin Wang, Ignacio Gutiérrez-Lezama, Céline Barreteau, Dong-Keun Ki, Enrico Giannini, Alberto F. Morpurgo

Abstract: We report the observation of an unexpected, long-range field-effect in WTe$_2$ devices, leading to large gate-induced changes of the transport properties of crystals much thicker than the electrostatic screening length. The phenomenon --which manifests itself very differently from the conventional field-effect-- originates from the non-local nature of transport in the devices that are thinner than… ▽ More We report the observation of an unexpected, long-range field-effect in WTe$_2$ devices, leading to large gate-induced changes of the transport properties of crystals much thicker than the electrostatic screening length. The phenomenon --which manifests itself very differently from the conventional field-effect-- originates from the non-local nature of transport in the devices that are thinner than the carrier mean free path, because of the dominant role of surface scattering. We reproduce theoretically the gate dependence of the measured classical and quantum magneto-transport in all detail, and show that the phenomenon is caused by the gate-tuning of the bulk carrier mobility by changing the scattering at the surface. Our results demonstrate the possibility to gate tune the electronic properties deep in the interior of conducting materials, avoiding limitations imposed by electrostatic screening. △ Less

Submitted 30 September, 2016; v1 submitted 29 April, 2016; originally announced April 2016.

Comments: To appear in Physical Review Letters soon (Published online October 19th, 2016), 10 pages, 8 figures, including the Supplemental Material

Journal ref: Phys. Rev. Lett. 117, 176601 (2016)

Charge transfer, band-like transport, and magnetic ions at F16CoPc/rubrene interfaces

Authors: Yulia Krupskaya, Florian Rückerl, Martin Knupfer, Alberto F. Morpurgo

Abstract: Organic semiconductors offer an unprecedented flexibility to control the electronic state of interfacial electronic systems. Here we present a first step in realizing organic charge transfer interfaces that combine both a large electrical conductivity and the presence of magnetic ions. We have performed a detailed investigation of F16CoPc/rubrene interface by means of temperature dependent charge… ▽ More Organic semiconductors offer an unprecedented flexibility to control the electronic state of interfacial electronic systems. Here we present a first step in realizing organic charge transfer interfaces that combine both a large electrical conductivity and the presence of magnetic ions. We have performed a detailed investigation of F16CoPc/rubrene interface by means of temperature dependent charge transport measurements, Hall effect, scanning Kelvin probe microscopy and photoelectron spectroscopy. Our finding is that the charge transfer leads to significantly enhanced electrical conductivity and the band-like transport. We have determined the density, mobility and nature of charge carriers in the system (holes in rubrene). We have also found that the amount of charge transfer in F16CoPc/rubrene is high enough to cause the band-like transport in rubrene crystals at the interface. Finally, our XPS and UPS measurements have shown that the charge transfer in F16CoPc/rubrene involves electronic orbitals centered on the magnetic Co ions of the phthalocyanine molecules causing a change in their spin. Thus, F16CoPc/rubrene is the first organic interface where the charge transfer responsible for the interfacial conductivity fully involves the metal Co core of the phthalocyanine molecules, providing a link between charge transport and magnetic properties. △ Less

Submitted 29 February, 2016; originally announced February 2016.

Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS2

Authors: Evgeniy Ponomarev, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of FETs based on exfoliated flakes. FETs on CVD-grown material, however, exhibit clear ambipolar transport, which for MoS2 monolayers had not been reported previously… ▽ More We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of FETs based on exfoliated flakes. FETs on CVD-grown material, however, exhibit clear ambipolar transport, which for MoS2 monolayers had not been reported previously. We exploit this property to estimate the bandgap Δ of monolayer MoS2 directly from the device transfer curves and find Δ $\approx$ 2.4-2.7 eV. In the ambipolar injection regime, we observe electroluminescence due to exciton recombination in MoS2, originating from the region close to the hole-injecting contact. Both the observed transport properties and the behavior of the electroluminescence can be consistently understood as due to the presence of defect states at an energy of 250-300 meV above the top of the valence band, acting as deep traps for holes. Our results are of technological relevance, as they show that devices with useful optoelectronic functionality can be realized on large-area MoS2 monolayers produced by controllable and scalable techniques. △ Less

Submitted 4 February, 2016; originally announced February 2016.

Journal ref: Nano Lett., 2015, 15 (12), pp.8289-8294

Tuning the charge transfer in Fx-TCNQ/rubrene single-crystal interfaces

Authors: Yulia Krupskaya, Ignacio Gutiérrez Lezama, Alberto F. Morpurgo

Abstract: Interfaces formed by two different organic semiconductors often exhibit a large conductivity, originating from transfer of charge between the constituent materials. The precise mechanisms driving charge transfer and determining its magnitude remain vastly unexplored, and are not understood microscopically. To start addressing this issue, we have performed a systematic study of highly reproducible… ▽ More Interfaces formed by two different organic semiconductors often exhibit a large conductivity, originating from transfer of charge between the constituent materials. The precise mechanisms driving charge transfer and determining its magnitude remain vastly unexplored, and are not understood microscopically. To start addressing this issue, we have performed a systematic study of highly reproducible single-crystal interfaces based on rubrene and Fx-TCNQ, a family of molecules whose electron affinity can be tuned by increasing the fluorine content. The combined analysis of transport and scanning Kelvin probe measurements reveals that the interfacial charge carrier density, resistivity, and activation energy correlate with the electron affinity of Fx-TCNQ crystals, with a higher affinity resulting in larger charge transfer. Although the transport properties can be described consistently and quantitatively using a mobility-edge model, we find that a quantitative analysis of charge transfer in terms of single-particle band diagrams reveals a discrepancy ~ 100 meV in the interfacial energy level alignment. We attribute the discrepancy to phenomena known to affect the energetics of organic semiconductors, which are neglected by a single-particle description, such as molecular relaxation and band-gap renormalization due to screening. The systematic behavior of the Fx-TCNQ/rubrene interfaces opens the possibility to investigate these phenomena experimentally, under controlled conditions. △ Less

Submitted 29 February, 2016; v1 submitted 18 December, 2015; originally announced December 2015.

Gate-induced Superconductivity in atomically thin MoS2 crystals

Authors: Davide Costanzo, Sanghyun Jo, Helmuth Berger, Alberto F. Morpurgo

Abstract: When thinned down to the atomic scale, many layered van der Waals materials exhibit an interesting evolution of their electronic properties, whose main aspects can be accounted for by changes in the single-particle band structure. Phenomena driven by interactions are also observed, but identifying experimentally systematic trends in their thickness dependence is challenging. Here, we explore the e… ▽ More When thinned down to the atomic scale, many layered van der Waals materials exhibit an interesting evolution of their electronic properties, whose main aspects can be accounted for by changes in the single-particle band structure. Phenomena driven by interactions are also observed, but identifying experimentally systematic trends in their thickness dependence is challenging. Here, we explore the evolution of gate-induced superconductivity in exfoliated MoS2 multilayers ranging from bulk-like to individual monolayers. We observe a clear transition for all the thicknesses down to the ultimate atomic limit, providing the first demonstration of superconductivity in atomically thin exfoliated crystals. Additionally, we characterize the superconducting state by measuring the critical temperature (TC) and magnetic field (BC) in a large number of multilayer devices, upon decreasing their thickness. The superconducting properties change smoothly down to bilayers, and a pronounced reduction in TC and BC is found to occur when going from bilayers to monolayers, for which we discuss possible microscopic mechanisms. Finding that gate-induced superconductivity persists in individual monolayers, which form the basic building blocks of more sophisticated van der Waals heterostructures, opens new possibilities for the engineering of the electronic properties of materials at the atomic scale. △ Less

Submitted 10 December, 2015; originally announced December 2015.

Comments: Originally submitted version, in compliance with editorial regulations. Final version to appear in Nature Nanotechnology