Improvement of the perovskite photodiodes performance via advanced interface engineering with polymer dielectric
Authors:
A. P. Morozov,
L. O. Luchnikov,
S. Yu. Yurchuk,
A. R. Ishteev,
P. A. Gostishchev,
S. I. Didenko,
N. S. Saratovsky,
S. S. Kozlov,
D. S. Muratov,
Yu. N. Luponosov,
D. S. Saranin
Abstract:
Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and ele…
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Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and electron transport junction in p-i-n perovskite photodiodes. Our complex work demonstrates that interface engineering with P(VDF-TrFE) induces significant Fermi level pinning, reducing from 4.85 eV for intrinsic perovskite to 4.28 eV for the configuration with dielectric interlayers. The integration of P(VDF-TrFE) into the perovskite film did not affect the morphology and crystal structure, but significantly changed the charge transport and device performance. IV curve analysis and 2-diode model calculations showed enhanced shunt properties, a decreased non-ideality factor, and reduced saturation dark current. We have shown that the complex introduction of P(VDF-TrFE) into the absorbers bulk and on its surface is essential to reduce the impact of the trap** processes. For P(VDF-TrFE) containing devices, we increased the specific detectivity from 10^11 to 10^12 Jones, expanded the linear dynamic range up to 100 dB, and reduced the equivalent noise power to 10^-13 W*Hz^-0.5. Reducing non-radiative recombination contributions significantly enhanced device performance, improving rise/fall times from 6.3/10.9 us to 4.6/6.5 us. The cut-off frequency (3dB) increased from 64.8 kHz to 74.8 kHz following the introduction of the dielectric. These results provide new insights into the use of organic dielectrics and an improved understanding of trap-states and ion defect compensation for detectors based on perovskite heterostructures.
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Submitted 3 July, 2024;
originally announced July 2024.
Micro pixelated halide perovskite photodiodes fabricated with ultraviolet laser scribing
Authors:
A. P. Morozov,
P. A. Gostishchev,
A. Zharkova,
A. A. Vasilev,
A. E. Aleksandrov,
A. R. Tameev,
A. R. Ishteev,
S. I. Didenko,
D. S. Saranin
Abstract:
In this study, we present a complex investigation for miniaturizing of perovskite photodiodes (PPDs) in various geometries with use of ultraviolet laser scribing (UV-LS). Employing a 355 nm (3.5 eV) pulsed laser at 30 kHz, we successfully manufactured PPDs with pixel configurations of 70x130 um2, 520x580 um2, and 2000x2000 um2. The utilization of UV-LS has a proven efficiency in achieving relevant…
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In this study, we present a complex investigation for miniaturizing of perovskite photodiodes (PPDs) in various geometries with use of ultraviolet laser scribing (UV-LS). Employing a 355 nm (3.5 eV) pulsed laser at 30 kHz, we successfully manufactured PPDs with pixel configurations of 70x130 um2, 520x580 um2, and 2000x2000 um2. The utilization of UV-LS has a proven efficiency in achieving relevant diode characteristics, such as low dark currents and high shunt resistance, as well as ultrafast response. The multi-step scribing cycle provided precise patterning of perovskite photodiodes (PPDs) in a string design. The dark current densities demonstrated exceptional uniformity, ranging from 10-10 A/cm2 for 2000x2000 um2 pixelated PPDs to 10-9 A/cm2 for the 70x130 um2 configuration. The string PPDs, consisting of 10 pixels per string, displayed homogenous dark current values, ensuring effective isolation between devices. Under green light illumination (540 nm), all PPD types exhibited a broad Linear Dynamic Range (LDR). Specifically, LDR values reached 110 dB, 117 dB, and 136 dB for 70x130, 520x580, and 2000x2000 devices, respectively, spanning an illumination intensity range from 2*10-3 mW/cm2 to 2 mW/cm2. High responsivity values up to 0.38 A/W, depending on the PPDs geometry, highlight the potential of laser scribing devices for sensing in the visible range. The calculated specific detectivity performance (from 1011 to 1013 Jones) surpasses commercial analogs, while the sub-microsecond response of 70x130 um2 and 520x580 um2 miniaturized devices underscores their suitability for precise time resolution detection systems.
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Submitted 9 December, 2023;
originally announced December 2023.
