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Identification by deuterium diffusion of a nitrogen-related deep donor preventing the p-type do** of ZnO
Authors:
N. Temahuki,
F. Jomard,
A. Lusson,
I. Stenger,
S. Hassani,
J. Chevallier,
J. M. Chauveau,
C. Morhain,
J. Barjon
Abstract:
Deuterium diffusion is investigated in nitrogen-doped homoepitaxial ZnO layers. The samples were grown under slightly Zn-rich growth conditions by plasma-assisted molecular beam epitaxy on m-plane ZnO substrates and have a nitrogen content [N] varied up to 5x1018 at.cm-3 as measured by secondary ion mass spectrometry (SIMS). All were exposed to a radio-frequency deuterium plasma during 1h at room…
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Deuterium diffusion is investigated in nitrogen-doped homoepitaxial ZnO layers. The samples were grown under slightly Zn-rich growth conditions by plasma-assisted molecular beam epitaxy on m-plane ZnO substrates and have a nitrogen content [N] varied up to 5x1018 at.cm-3 as measured by secondary ion mass spectrometry (SIMS). All were exposed to a radio-frequency deuterium plasma during 1h at room temperature. Deuterium diffusion is observed in all epilayers while its penetration depth decreases as the nitrogen concentration increases. This is a strong evidence of a diffusion mechanism limited by the trap** of deuterium on a nitrogen-related trap. The SIMS profiles are analyzed using a two-trap model including a shallow trap, associated with a fast diffusion, and a deep trap, related to nitrogen. The capture radius of the nitrogen-related trap is determined to be 20 times smaller than the value expected for nitrogen-deuterium pairs formed by coulombic attraction between D+ and nitrogen-related acceptors. The (N2)O deep donor is proposed as the deep trap** site for deuterium and accounts well for the small capture radius and the observed photoluminescence quenching and recovery after deuteration of the ZnO:N epilayers. It is also found that this defect is by far the N-related defect with the highest concentration in the studied samples.
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Submitted 9 March, 2021;
originally announced March 2021.
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Transport of indirect excitons in ZnO quantum wells
Authors:
Yuliya Kuznetsova,
Fedor Fedichkin,
Peristera Andreakou,
Eric Calman,
Leonid Butov,
Pierre Lefebvre,
Thierry Bretagnon,
Thierry Guillet,
Maria Vladimirova,
C. Morhain,
Jean-Michel Chauveau
Abstract:
We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells.
We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells.
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Submitted 23 July, 2015; v1 submitted 10 March, 2015;
originally announced March 2015.
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Nature of resonant Raman scattering in ZnCoO films under sub-band excitation
Authors:
K. A. Avramenko,
V. P. Bryksa,
V. V. Strelchuk,
C. Deparis,
C. Morhain,
P. Tronc
Abstract:
Using the methods of scanning electron (SEM) and atom force microscopy (AFM) as well as photoluminescence (PL) and Raman micro-spectroscopy, we investigated $Zn_{1-x}Co_xO$ films ($x=5$ and $15\%$) grown by molecular beam epitaxy on sapphire substrates. It is found that the films have a nanocrystalline structure with the grain size decreased from $\sim150$ down to $28$ nm at changing the $Co$ conc…
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Using the methods of scanning electron (SEM) and atom force microscopy (AFM) as well as photoluminescence (PL) and Raman micro-spectroscopy, we investigated $Zn_{1-x}Co_xO$ films ($x=5$ and $15\%$) grown by molecular beam epitaxy on sapphire substrates. It is found that the films have a nanocrystalline structure with the grain size decreased from $\sim150$ down to $28$ nm at changing the $Co$ concentration from $5$ to $15\%$. High-resolution SEM images of $Zn_{0.85}Co_{0.15}O$ film have been interpreted as inhomogeneous lateral distribution of $Co$ atoms. Two broad emission bands observed in spectra of band-to-band PL are ascribed to emission from $Zn_{1-x}Co_xO$ nano-regions enriched and depleted with $Co$. In low-temperature PL spectra under sub-band excitation of $Zn_{1-x}Co_xO$ films, there observed are intra-center optical transitions due to $Co^{2+}$ center: $^2E(G)$, $^2A_1(G)$, $^2T_1(G)$, $^4T_1(P)$, $^2T_2(G)$ $\longrightarrow$ $^4A_2(F)$. Offered is a new approach to interpretation of resonant enhancement observed in multi-phonon scattering by $LO$ phonons in $Zn_{1-x}Co_xO$ under sub-bandgap excitation combined with the extrinsic Fröhlich interaction mediated via a localized exciton bound to the isoelectronic impurity in which the electron is strongly localized at the magnetic $Co^{2+}$ ion. This conclusion is confirmed by the dependence of Raman spectra on the quantum energy of exciting radiation. It assumes formation of intermediated sub-band electron excited states of isoelectron $Co$ dopant, they are also referred to as charge transfer processes.
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Submitted 7 September, 2011;
originally announced September 2011.
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Influence of s,p-d and s-p exchange couplings on exciton splitting in (Zn,Mn)O
Authors:
W. Pacuski,
J. Suffczynski,
P. Osewski,
P. Kossacki,
A. Golnik,
J. A. Gaj,
C. Deparis,
C. Morhain,
E. Chikoidze,
Y. Dumont,
D. Ferrand,
J. Cibert,
T. Dietl
Abstract:
This work presents results of near-band gap magnetooptical studies on (Zn,Mn)O epitaxial layers. We observe excitonic transitions in reflectivity and photoluminescence, that shift towards higher energies when the Mn concentration increases and split nonlinearly under the magnetic field. Excitonic shifts are determined by the s,p-d exchange coupling to magnetic ions, by the electron-hole s-p exchan…
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This work presents results of near-band gap magnetooptical studies on (Zn,Mn)O epitaxial layers. We observe excitonic transitions in reflectivity and photoluminescence, that shift towards higher energies when the Mn concentration increases and split nonlinearly under the magnetic field. Excitonic shifts are determined by the s,p-d exchange coupling to magnetic ions, by the electron-hole s-p exchange, and the spin-orbit interactions. A quantitative description of the magnetoreflectivity findings indicates that the free excitons A and B are associated with the Gamma_7 and Gamma_9 valence bands, respectively, the order reversed as compared to wurtzite GaN. Furthermore, our results show that the magnitude of the giant exciton splittings, specific to dilute magnetic semiconductors, is unusual: the magnetoreflectivity data is described by an effective exchange energy N_0(beta-alpha)=+0.2+/-0.1 eV, what points to small and positive N_0 beta. It is shown that both the increase of the gap with x and the small positive value of the exchange energy N_0 beta corroborate recent theory describing the exchange splitting of the valence band in a non-perturbative way, suitable for the case of a strong p-d hybridization.
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Submitted 10 May, 2011;
originally announced May 2011.
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Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies
Authors:
V. V. Strelchuk,
K. A. Avramenko,
V. P. Bryksa,
P. M. Lytvyn,
M. Ya. Valakh,
V. O. Pashchenko,
O. M. Bludov,
C. Deparis,
C. Morhain,
P. Tronc
Abstract:
We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)-sapphire substrates. Magnetic force microscopy (MFM) and magnetic measurements with SQUID magnetometer show clear ferromagnetic behavior of the films up to room temperature whereas they are antiferromagnetic below 200 K approximately. T…
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We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)-sapphire substrates. Magnetic force microscopy (MFM) and magnetic measurements with SQUID magnetometer show clear ferromagnetic behavior of the films up to room temperature whereas they are antiferromagnetic below 200 K approximately. Temperature dependence of the carrier mobility was determined using Raman line shape analysis of the longitudinal-optical-phonon-plasmon coupled modes. It shows that the microscopic mechanism for ferromagnetic ordering is coupling mediated by free electrons between spins of Co atoms. These results bring insight into a subtle interplay between charge carriers and magnetism in MBE-grown Zn(1-x)CoxO films.
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Submitted 23 March, 2011;
originally announced March 2011.
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Magnetic Anisotropy of Co2+ as Signature of Intrinsic Ferromagnetism in ZnO:Co
Authors:
P. Sati,
R. Hayn,
R. Kuzian,
S. Regnier,
S. Schafer,
A. Stepanov,
C. Morhain,
C. Deparis,
M. Laugt,
M. Goiran,
Z. Golacki
Abstract:
We report on the magnetic properties of thoroughly characterized Zn1-xCoxO epitaxial thin films, with low Co concentration, x=0.003-0.005. Magnetic and EPR measurements, combined with crystal field theory, reveal that isolated Co2+ ions in ZnO possess a strong single ion anisotropy which leads to an "easy plane" ferromagnetic state when the ferromagnetic Co-Co interaction is considered. We sugge…
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We report on the magnetic properties of thoroughly characterized Zn1-xCoxO epitaxial thin films, with low Co concentration, x=0.003-0.005. Magnetic and EPR measurements, combined with crystal field theory, reveal that isolated Co2+ ions in ZnO possess a strong single ion anisotropy which leads to an "easy plane" ferromagnetic state when the ferromagnetic Co-Co interaction is considered. We suggest that the peculiarities of the magnetization process of this state can be viewed as a signature of intrinsic ferromagnetism in ZnO:Co materials.
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Submitted 17 February, 2007;
originally announced February 2007.
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Antiferromagnetic interactions in single crystalline Zn1-xCoxO thin films
Authors:
P. Sati,
C. Deparis,
C. Morhain,
S. Schafer,
A. Stepanov
Abstract:
In a rather contradictory situation regarding magnetic data on Co-doped ZnO, we have succeeded in fabricating high-quality single crystalline Zn1-xCoxO (x=0.003-0.07) thin films. This gives us the possibility, for the first time, to examine the it intrinsic magnetic properties of ZnO:Co at a quantitative level and therefore to address several unsolved problems, the major one being the nature of…
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In a rather contradictory situation regarding magnetic data on Co-doped ZnO, we have succeeded in fabricating high-quality single crystalline Zn1-xCoxO (x=0.003-0.07) thin films. This gives us the possibility, for the first time, to examine the it intrinsic magnetic properties of ZnO:Co at a quantitative level and therefore to address several unsolved problems, the major one being the nature of the Co-Co interaction in the ZnO structure.
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Submitted 16 February, 2007;
originally announced February 2007.
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Spin-Exchange Interaction in ZnO-based Quantum Wells
Authors:
B. Gil,
P. Lefebvre,
T. Bretagnon,
T. Guillet,
J. A. Sans,
T. Taliercio,
C. Morhain
Abstract:
Wurtzitic ZnO/(Zn,Mg)O quantum wells grown along the (0001) direction permit unprecedented tunability of the short-range spin exchange interaction. In the context of large exciton binding energies and electron-hole exchange interaction in ZnO, this tunability results from the competition between quantum confinement and giant quantum confined Stark effect. By using time-resolved photoluminescence…
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Wurtzitic ZnO/(Zn,Mg)O quantum wells grown along the (0001) direction permit unprecedented tunability of the short-range spin exchange interaction. In the context of large exciton binding energies and electron-hole exchange interaction in ZnO, this tunability results from the competition between quantum confinement and giant quantum confined Stark effect. By using time-resolved photoluminescence we identify, for well widths under 3 nm, the redistribution of oscillator strengths between the A and B excitonic transitions, due to the enhancement of the exchange interaction. Conversely, for wider wells, the redistribution is cancelled by the dominant effect of internal electric fields, which dramatically reduce the exchange energy.
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Submitted 20 June, 2006; v1 submitted 17 March, 2006;
originally announced March 2006.
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Effect of the s,p-d exchange interaction on the excitons in (Zn,Co)O epilayers
Authors:
W. Pacuski,
D. Ferrand,
J. Cibert,
C. Deparis,
J. A. Gaj,
P. Kossacki,
C. Morhain
Abstract:
We present a spectroscopic study of (Zn,Co)O layers grown by molecular beam epitaxy on sapphire substrates. (Zn,Co)O is commonly considered as a promising candidate for being a Diluted Magnetic Semiconductor ferromagnetic at room temperature. We performed magneto-optical spectroscopy in the Faraday configuration, by applying a magnetic field up to 11 T, at temperatures down to 1.5 K. For very di…
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We present a spectroscopic study of (Zn,Co)O layers grown by molecular beam epitaxy on sapphire substrates. (Zn,Co)O is commonly considered as a promising candidate for being a Diluted Magnetic Semiconductor ferromagnetic at room temperature. We performed magneto-optical spectroscopy in the Faraday configuration, by applying a magnetic field up to 11 T, at temperatures down to 1.5 K. For very dilute samples (less than 0.5% Co), the giant Zeeman splitting of the A and B excitons is observed at low temperature. It is proportional to the magnetization of isolated Co ions, as calculated using the anisotropy and g-factor deduced from the spectroscopy of the d-d transitions. This demonstrates the existence of spin-carrier coupling. Electron-hole exchange within the exciton has a strong effect on the giant Zeeman splitting observed on the excitons. From the effective spin-exciton coupling, <N0(Alpha-Beta)>_X=0.4 eV, we estimate the difference of the exchange integrals for free carriers, N0|Alpha-Beta|=0.8 eV. The magnetic circular dichroism observed near the energy gap was found to be proportional to the paramagnetic magnetization of anisotropic Co ions even for higher Co contents.
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Submitted 12 August, 2005; v1 submitted 12 August, 2005;
originally announced August 2005.
