Skip to main content

Showing 1–1 of 1 results for author: Morgunov, R B

.
  1. arXiv:1411.2802  [pdf

    cond-mat.str-el cond-mat.mtrl-sci

    Condensation of holes into antiferromagnetic droplets in the organic semiconductor (DOEO)$_4$[HgBr$_4$]TCE

    Authors: O. V. Koplak, A. Chernenkaya, K. Medjanik, A. Brambilla, A. Gloskovskii, A. Calloni, G. Schönhense, F. Ciccacci, R. B. Morgunov

    Abstract: Changes of the electronic structure accompanied by charge localization and a transition to an antiferromagnetic ground state were observed in the (DOEO)$_4$[HgBr$_4$]TCE organic semiconductor. Localization starts in the region of about 150 K and the antiferromagnetic state occurs below 60 K. The magnetic moment of the crystal contains contributions of antiferromagnetic inclusions (droplets), indiv… ▽ More

    Submitted 11 November, 2014; originally announced November 2014.

    Comments: 22 pages, 9 figures. arXiv admin note: text overlap with arXiv:0710.5586 by other authors