Showing 1–2 of 2 results for author: Morgunov, R
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Temperature dependence of electronic and magnetic properties of (DOEO)$_4$[HgBr$_4$]TCE single crystals
Authors:
Alisa Chernenkaya,
Aleksandr Kotov,
Oksana Koplak,
Katerina Medjanik,
Roman Morgunov,
Eduard Yagubskii,
Hans-Joachim Elmers,
Gerd Schönhense
Abstract:
The temperature dependence of electronic and magnetic properties of the organic charge-transfer salt (DOEO)$_4$[HgBr$_4$]TCE was investigated using magnetometry. Electronic transport properties revealed three distinct phases which are related to different magnetic coupling phenomena. In the low-temperature insulating phase (T<70 K) the antiferromagnetic coupling between two distinct sites of magne…
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The temperature dependence of electronic and magnetic properties of the organic charge-transfer salt (DOEO)$_4$[HgBr$_4$]TCE was investigated using magnetometry. Electronic transport properties revealed three distinct phases which are related to different magnetic coupling phenomena. In the low-temperature insulating phase (T<70 K) the antiferromagnetic coupling between two distinct sites of magnetic moments causes antiferromagnetic order below the Néel temperature T$_N$=40 K. In the temperature region 70-120 K the (DOEO)$_4$[HgBr$_4$]TCE shows metallic-like behavior and with further increasing of temperature it becomes a bad metal due to loss of itinerant character and increase of hop** conductivity of charge carriers.
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Submitted 11 November, 2014;
originally announced November 2014.
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Condensation of holes into antiferromagnetic droplets in the organic semiconductor (DOEO)$_4$[HgBr$_4$]TCE
Authors:
O. V. Koplak,
A. Chernenkaya,
K. Medjanik,
A. Brambilla,
A. Gloskovskii,
A. Calloni,
G. Schönhense,
F. Ciccacci,
R. B. Morgunov
Abstract:
Changes of the electronic structure accompanied by charge localization and a transition to an antiferromagnetic ground state were observed in the (DOEO)$_4$[HgBr$_4$]TCE organic semiconductor. Localization starts in the region of about 150 K and the antiferromagnetic state occurs below 60 K. The magnetic moment of the crystal contains contributions of antiferromagnetic inclusions (droplets), indiv…
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Changes of the electronic structure accompanied by charge localization and a transition to an antiferromagnetic ground state were observed in the (DOEO)$_4$[HgBr$_4$]TCE organic semiconductor. Localization starts in the region of about 150 K and the antiferromagnetic state occurs below 60 K. The magnetic moment of the crystal contains contributions of antiferromagnetic inclusions (droplets), individual paramagnetic centers formed by localized holes and free charge carriers at 2 K. Two types of inclusions of 100-400 nm and 2-5 nm sizes were revealed by transmission electron microscopy. Studying the symmetry of the antiferromagnetic droplets (100-400 nm inclusions) and individual localized holes by electron spin resonance (ESR) revealed fingerprints of the antiferromagnetic resonance spectra of the spin correlated droplets as well as paramagnetic resonance spectra of the individual localized charge carriers. Photoelectron spectroscopy in the VUV, soft and hard X-ray range shows temperature-dependent effects upon crossing the critical temperature. The substantially different probing depths of soft and hard X-ray photoelectron spectroscopy yield information on the surface termination. The combined investigation using soft and hard X-ray photons to study the same sample results in details of electronic structure including structural aspects at the surface.
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Submitted 11 November, 2014;
originally announced November 2014.
