Resurgence of superconductivity and the role of $d_{xy}$ hole band in FeSe$_{1-x}$Te$_x$
Authors:
Archie B. Morfoot,
Timur K. Kim,
Matthew D. Watson,
Amir A. Haghighirad,
Shiv J. Singh,
Nick Bultinck,
Amalia I. Coldea
Abstract:
Iron-chalcogenide superconductors display rich phenomena caused by orbital-dependent band shifts and electronic correlations. Additionally, they are potential candidates for topological superconductivity due to the band inversion between the Fe $d$ bands and the chalcogen $p_z$ band. Here we present a detailed study of the electronic structure of the nematic superconductors FeSe$_{1-x}$Te$_x$ (…
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Iron-chalcogenide superconductors display rich phenomena caused by orbital-dependent band shifts and electronic correlations. Additionally, they are potential candidates for topological superconductivity due to the band inversion between the Fe $d$ bands and the chalcogen $p_z$ band. Here we present a detailed study of the electronic structure of the nematic superconductors FeSe$_{1-x}$Te$_x$ ($0<x<0.4$) using angle-resolved photoemission spectroscopy to understand the role of orbital-dependent band shifts, electronic correlations and the chalcogen band. We assess the changes in the effective masses using a three-band low energy model, and the band renormalization via comparison with DFT band structure calculations. The effective masses decrease for all three-hole bands inside the nematic phase followed by a strong increase for the band with $d_{xy}$ orbital character. Interestingly, this nearly-flat $d_{xy}$ band becomes more correlated as it shifts towards the Fermi level with increasing Te concentrations and as the second superconducting dome emerges. Our findings suggests that the $d_{xy}$ hole band, which is very sensitive to the chalcogen height, could be involved in promoting an additional pairing channel and increasing the density of states to stabilize the second superconducting dome in FeSe$_{1-x}$Te$_x$. This simultaneous shift of the $d_{xy}$ hole band and enhanced superconductivity is in contrast with FeSe$_{1-x}$S$_x$.
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Submitted 19 January, 2024;
originally announced January 2024.
Unconventional localization of electrons inside of a nematic electronic phase
Authors:
L. Farrar,
Z. Zajicek,
A. B. Morfoot,
M. Bristow,
O. S. Humphries,
A. A. Haghighirad,
A. McCollam,
S. J. Bending,
A. I. Coldea
Abstract:
The magnetotransport behaviour inside the nematic phase of bulk FeSe reveals unusual multiband effects that cannot be reconciled with a simple two-band approximation proposed by surface-sensitive spectroscopic probes. In order to understand the role played by the multiband electronic structure and the degree of two-dimensionality we have investigated the electronic properties of exfoliated flakes…
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The magnetotransport behaviour inside the nematic phase of bulk FeSe reveals unusual multiband effects that cannot be reconciled with a simple two-band approximation proposed by surface-sensitive spectroscopic probes. In order to understand the role played by the multiband electronic structure and the degree of two-dimensionality we have investigated the electronic properties of exfoliated flakes of FeSe by reducing their thickness. Based on magnetotransport and Hall resistivity measurements, we assess the mobility spectrum that suggests an unusual asymmetry between the mobilities of the electrons and holes with the electron carriers becoming localized inside the nematic phase. Quantum oscillations in magnetic fields up to 38 T indicate the presence of a hole-like quasiparticle with a lighter effective mass and a quantum scattering time three times shorter, as compared with bulk FeSe. The observed localization of negative charge carriers by reducing dimensionality can be driven by orbitally-dependent correlation effects, enhanced interband spin-fluctuations or a Lifshitz-like transition which affect mainly the electron bands. The electronic localization leads to a fragile two-dimensional superconductivity in thin flakes of FeSe, in contrast to the two-dimensional high-Tc induced with electron do** via dosing or using a suitable interface.
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Submitted 12 December, 2022;
originally announced December 2022.
