Showing 51–100 of 110 results for author: Morello, A

Robust electric dipole transition at microwave frequencies for nuclear spin qubits in silicon

Authors: Guilherme Tosi, Fahd A. Mohiyaddin, Stefanie Tenberg, Arne Laucht, Andrea Morello

Abstract: The nuclear spin state of a phosphorus donor ($^{31}$P) in isotopically enriched silicon-28 is an excellent host to store quantum information in the solid state. The spin's insensitivity to electric fields yields a solid-state qubit with record coherence times, but also renders coupling to other quantum systems very challenging. Here, we describe how to generate a strong electric dipole ($>100$ De… ▽ More The nuclear spin state of a phosphorus donor ($^{31}$P) in isotopically enriched silicon-28 is an excellent host to store quantum information in the solid state. The spin's insensitivity to electric fields yields a solid-state qubit with record coherence times, but also renders coupling to other quantum systems very challenging. Here, we describe how to generate a strong electric dipole ($>100$ Debye) at microwave frequencies for the nuclear spin. This is achieved by applying a magnetic drive to the spin of the donor-bound electron, while simultaneously controlling its charge state with electric fields. Under certain conditions, the microwave magnetic drive also renders the nuclear spin resonance frequency and electric dipole strongly insensitive to electrical noise, yielding long ($>1$ ms) dephasing times and robust gate operations. The nuclear spin could then be strongly coupled to microwave resonators, with a vacuum Rabi splitting of order 1 MHz, or to other nuclear spins, nearly half a micrometer apart, via strong electric dipole-dipole interaction. This work brings the $^{31}$P nuclear qubit into the realm of hybrid quantum systems and opens up new avenues in quantum information processing. △ Less

Submitted 13 August, 2018; v1 submitted 25 June, 2017; originally announced June 2017.

Comments: 10 pages, 5 figures. Expanded and improved version

Journal ref: Phys. Rev. B 98, 075313 (2018)

Exploring quantum chaos with a single nuclear spin

Authors: Vincent Mourik, Serwan Asaad, Hannes Firgau, Jarryd J. Pla, Catherine Holmes, Gerard J. Milburn, Jeffrey C. McCallum, Andrea Morello

Abstract: Most classical dynamical systems are chaotic. The trajectories of two identical systems prepared in infinitesimally different initial conditions diverge exponentially with time. Quantum systems, instead, exhibit quasi-periodicity due to their discrete spectrum. Nonetheless, the dynamics of quantum systems whose classical counterparts are chaotic are expected to show some features that resemble cha… ▽ More Most classical dynamical systems are chaotic. The trajectories of two identical systems prepared in infinitesimally different initial conditions diverge exponentially with time. Quantum systems, instead, exhibit quasi-periodicity due to their discrete spectrum. Nonetheless, the dynamics of quantum systems whose classical counterparts are chaotic are expected to show some features that resemble chaotic motion. Among the many controversial aspects of the quantum-classical boundary, the emergence of chaos remains among the least experimentally verified. Time-resolved observations of quantum chaotic dynamics are particularly rare, and as yet unachieved in a single particle, where the subtle interplay between chaos and quantum measurement could be explored at its deepest levels. We present here a realistic proposal to construct a chaotic driven top from the nuclear spin of a single donor atom in silicon, in the presence of a nuclear quadrupole interaction. This system is exquisitely measurable and controllable, and possesses extremely long intrinsic quantum coherence times, allowing for the observation of subtle dynamical behavior over extended periods. We show that signatures of chaos are expected to arise for experimentally realizable parameters of the system, allowing the study of the relation between quantum decoherence and classical chaos, and the observation of dynamical tunneling. △ Less

Submitted 9 October, 2018; v1 submitted 14 March, 2017; originally announced March 2017.

Comments: revised and published version

Journal ref: Phys. Rev. E 98, 042206 (2018)

Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability

Authors: Rifat Ferdous, Kok W. Chan, Menno Veldhorst, J. C. C. Hwang, C. H. Yang, Gerhard Klimeck, Andrea Morello, Andrew S. Dzurak, Rajib Rahman

Abstract: We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that the g-factors and their Stark shifts undergo variations due to these steps. We compare our theoretical predictions with experiments on QDs at a Si/SiO$_2$ interf… ▽ More We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that the g-factors and their Stark shifts undergo variations due to these steps. We compare our theoretical predictions with experiments on QDs at a Si/SiO$_2$ interface, in which we observe significant differences in Stark shifts between QDs in two different samples. We also experimentally observe variations in the $g$-factors of one-electron and three-electron spin qubits realized in three neighboring QDs on the same sample, at a level consistent with our calculations. The dephasing times of these qubits also vary, most likely due to their varying sensitivity to charge noise, resulting from different interface conditions. More importantly, from our calculations we show that by employing the anisotropic nature of the spin-orbit interaction (SOI) in a Si QD, we can minimize and control these variations. Ultimately, we predict that the dephasing times of the Si QD spin qubits will be anisotropic and can be improved by at least an order of magnitude, by aligning the external DC magnetic field towards specific crystal directions. △ Less

Submitted 2 August, 2017; v1 submitted 10 March, 2017; originally announced March 2017.

Comments: 5 pages, 3 figures, Supplemental Material (3 pages, 2 figures)

Journal ref: Phys. Rev. B 97, 241401 (2018)

Coherent control via weak measurements in $^{31}$P single-atom electron and nuclear spin qubits

Authors: J. T. Muhonen, J. P. Dehollain, A. Laucht, S. Simmons, R. Kalra, F. E. Hudson, D. N. Jamieson, J. C. McCallum, K. M. Itoh, A. S. Dzurak, A. Morello

Abstract: The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and the nuclear spin states of a single $^{31}$P donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be… ▽ More The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and the nuclear spin states of a single $^{31}$P donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be used to coherently rotate the spin to a desired pure state. We explicitly demonstrate that phase coherence is preserved throughout multiple sequential single-shot weak measurements, and that the partial state collapse can be reversed. Second, we use the relation between measurement strength and perturbation of the nuclear state as a physical meter to extract the tunneling rates between the $^{31}$P donor and a nearby electron reservoir from data, conditioned on observing no tunneling events. Our experiments open avenues to measurement-based state preparation, steering and feedback protocols for spin systems in the solid state, and highlight the fundamental connection between information gain and state modification in quantum mechanics. △ Less

Submitted 26 February, 2017; originally announced February 2017.

Comments: 6 pages main text + 3 pages supplementary

Journal ref: Phys. Rev. B 98, 155201 (2018)

Interfacing spin qubits in quantum dots and donors - hot, dense and coherent

Authors: L. M. K. Vandersypen, H. Bluhm, J. S. Clarke, A. S. Dzurak, R. Ishihara, A. Morello, D. J. Reilly, L. R. Schreiber, M. Veldhorst

Abstract: Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circ… ▽ More Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circuits are completely different from those for classical circuits, as individual DC, pulsed and in some cases microwave control signals need to be routed from external sources to every qubit. This is further complicated by the requirement that these spin qubits currently operate at temperatures below 100 mK. Here we review several strategies that are considered to address this crucial challenge in scaling quantum circuits based on electron spin qubits. Key assets of spin qubits include the potential to operate at 1 to 4 K, the high density of quantum dots or donors combined with possibilities to space them apart as needed, the extremely long spin coherence times, and the rich options for integration with classical electronics based on the same technology. △ Less

Submitted 18 December, 2016; originally announced December 2016.

Comments: 13 pages, 4 figures

Journal ref: npj Quantum Information 3, 34 (2017)

Impact of g-factors and valleys on spin qubits in a silicon double quantum dot

Authors: J. C. C. Hwang, C. H. Yang, M. Veldhorst, N. Hendrickx, M. A. Fogarty, W. Huang, F. E. Hudson, A. Morello, A. S. Dzurak

Abstract: We define single electron spin qubits in a silicon MOS double quantum dot system. By map** the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an inter-valley spin-orbit coupling. We fit the data from which we extract an inter-valley coupling strength of 43 MHz. In addition, we observe a narrow resonance near th… ▽ More We define single electron spin qubits in a silicon MOS double quantum dot system. By map** the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an inter-valley spin-orbit coupling. We fit the data from which we extract an inter-valley coupling strength of 43 MHz. In addition, we observe a narrow resonance near the primary qubit resonance when we operate the device in the (1,1) charge configuration. The experimental data is consistent with a simulation involving two weakly exchanged-coupled spins with a g-factor difference of 1 MHz, of the same order as the Rabi frequency. We conclude that the narrow resonance is the result of driven transitions between the T- and T+ triplet states, using an ESR signal of frequency located halfway between the resonance frequencies of the two individual spins. The findings presented here offer an alternative method of implementing two-qubit gates, of relevance to the operation of larger scale spin qubit systems. △ Less

Submitted 26 February, 2017; v1 submitted 27 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. B 96, 045302 (2017)

Strain-induced spin resonance shifts in silicon devices

Authors: J. J. Pla, A. Bienfait, G. Pica, J. Mansir, F. A. Mohiyaddin, Z. Zeng, Y. M. Niquet, A. Morello, T. Schenkel, J. J. L. Morton, P. Bertet

Abstract: In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin line-widths and it is therefore important to study, understand and model such effects in order to better predict d… ▽ More In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin line-widths and it is therefore important to study, understand and model such effects in order to better predict device performance. Here we investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminium micro-resonator has been fabricated. The on-chip resonator provides two functions: first, it produces local strain in the silicon due to the larger thermal contraction of the aluminium, and second, it enables sensitive electron spin resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations we are able to reconstruct key features of our experiments, including the electron spin resonance spectra. Our results are consistent with a recently discovered mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain. △ Less

Submitted 9 January, 2018; v1 submitted 25 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. Applied 9, 044014 (2018)

A single-atom quantum memory in silicon

Authors: S. Freer, S. Simmons, A. Laucht, J. T. Muhonen, J. P. Dehollain, R. Kalra, F. A. Mohiyaddin, F. Hudson, K. M. Itoh, J. C. McCallum, D. N. Jamieson, A. S. Dzurak, A. Morello

Abstract: Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coex… ▽ More Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched $^{28}$Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity of $F_p =$81${\pm}$7%, a memory fidelity ($F_m$) of over 90%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses. △ Less

Submitted 5 September, 2016; v1 submitted 25 August, 2016; originally announced August 2016.

Comments: 14 pages, 6 figures. v2 has minor cosmetic improvements, and 11 additional references

A logical qubit in a linear array of semiconductor quantum dots

Authors: Cody Jones, Michael A. Fogarty, Andrea Morello, Mark F. Gyure, Andrew S. Dzurak, Thaddeus D. Ladd

Abstract: We design and analyze a logical qubit composed of a linear array of electron spins in semiconductor quantum dots. To avoid the difficulty of fully controlling a two-dimensional array of dots, we adapt spin control and error correction to a one-dimensional line of silicon quantum dots. Control speed and efficiency are maintained via a scheme in which electron spin states are controlled globally usi… ▽ More We design and analyze a logical qubit composed of a linear array of electron spins in semiconductor quantum dots. To avoid the difficulty of fully controlling a two-dimensional array of dots, we adapt spin control and error correction to a one-dimensional line of silicon quantum dots. Control speed and efficiency are maintained via a scheme in which electron spin states are controlled globally using broadband microwave pulses for magnetic resonance while two-qubit gates are provided by local electrical control of the exchange interaction between neighboring dots. Error correction with two-, three-, and four-qubit codes is adapted to a linear chain of qubits with nearest-neighbor gates. We estimate an error correction threshold of 1e-4. Furthermore, we describe a sequence of experiments to validate the methods on near-term devices starting from four coupled dots. △ Less

Submitted 28 February, 2017; v1 submitted 22 August, 2016; originally announced August 2016.

Comments: 29 pages, 27 figures, 170 references

Journal ref: Phys. Rev. X 8, 021058 (2018)

Optimization of a solid-state electron spin qubit using Gate Set Tomography

Authors: Juan P. Dehollain, Juha T. Muhonen, Robin Blume-Kohout, Kenneth M. Rudinger, John King Gamble, Erik Nielsen, Arne Laucht, Stephanie Simmons, Rachpon Kalra, Andrew S. Dzurak, Andrea Morello

Abstract: State of the art qubit systems are reaching the gate fidelities required for scalable quantum computation architectures. Further improvements in the fidelity of quantum gates demands characterization and benchmarking protocols that are efficient, reliable and extremely accurate. Ideally, a benchmarking protocol should also provide information on how to rectify residual errors. Gate Set Tomography… ▽ More State of the art qubit systems are reaching the gate fidelities required for scalable quantum computation architectures. Further improvements in the fidelity of quantum gates demands characterization and benchmarking protocols that are efficient, reliable and extremely accurate. Ideally, a benchmarking protocol should also provide information on how to rectify residual errors. Gate Set Tomography (GST) is one such protocol designed to give detailed characterization of as-built qubits. We implemented GST on a high-fidelity electron-spin qubit confined by a single $^{31}$P atom in $^{28}$Si. The results reveal systematic errors that a randomized benchmarking analysis could measure but not identify, whereas GST indicated the need for improved calibration of the length of the control pulses. After introducing this modification, we measured a new benchmark average gate fidelity of $99.942(8)\%$, an improvement on the previous value of $99.90(2)\%$. Furthermore, GST revealed high levels of non-Markovian noise in the system, which will need to be understood and addressed when the qubit is used within a fault-tolerant quantum computation scheme. △ Less

Submitted 16 June, 2016; v1 submitted 9 June, 2016; originally announced June 2016.

Comments: 14 pages, 4 figures. v2: Updated references and included ancillary files

Journal ref: New Journal of Physics 18, 103018 (2016)

Breaking the rotating wave approximation for a strongly-driven, dressed, single electron spin

Authors: Arne Laucht, Stephanie Simmons, Rachpon Kalra, Guilherme Tosi, Juan P. Dehollain, Juha T. Muhonen, Solomon Freer, Fay E. Hudson, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Andrea Morello

Abstract: We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field $B_1$ is used to dress the electron spin and create a new quantum system with a level splitting proportional to $B_1$. The dressed two-level system can then be driven by modulating the detuning $Δν$ between the microwave source frequency… ▽ More We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field $B_1$ is used to dress the electron spin and create a new quantum system with a level splitting proportional to $B_1$. The dressed two-level system can then be driven by modulating the detuning $Δν$ between the microwave source frequency $ν_{\rm MW}$ and the electron spin transition frequency $ν_e$ at the frequency of the level splitting. The resulting dressed qubit Rabi frequency $Ω_{Rρ}$ is defined by the modulation amplitude, which can be made comparable to the level splitting using frequency modulation on the microwave source. This allows us to investigate the regime where the rotating wave approximation breaks down, without requiring microwave power levels that would be incompatible with a cryogenic environment. We observe clear deviations from normal Rabi oscillations and can numerically simulate the time evolution of the states in excellent agreement with the experimental data. △ Less

Submitted 1 September, 2016; v1 submitted 7 June, 2016; originally announced June 2016.

Journal ref: Phys. Rev. B 94, 161302 (2016)

A Dressed Spin Qubit in Silicon

Authors: Arne Laucht, Rachpon Kalra, Stephanie Simmons, Juan P. Dehollain, Juha T. Muhonen, Fahd A. Mohiyaddin, Solomon Freer, Fay E. Hudson, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, A. Morello

Abstract: Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed sp… ▽ More Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, by frequency modulating the driving field, or by a simple detuning pulse. We measure coherence times of $T_{2ρ}^*=2.4$ ms and $T_{2ρ}^{\rm Hahn}=9$ ms, one order of magnitude longer than those of the undressed qubit. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations. △ Less

Submitted 15 March, 2016; originally announced March 2016.

Vibration-induced electrical noise in a cryogen-free dilution refrigerator: characterization, mitigation, and impact on qubit coherence

Authors: Rachpon Kalra, Arne Laucht, Juan P. Dehollain, Daniel Bar, Solomon Freer, Stephanie Simmons, Juha T. Muhonen, Andrea Morello

Abstract: Cryogen-free low-temperature setups are becoming more prominent in experimental science due to their convenience and reliability, and concern about the increasing scarcity of helium as a natural resource. Despite not having any moving parts at the cold end, pulse tube cryocoolers introduce vibrations that can be detrimental to the experiments. We characterize the coupling of these vibrations to th… ▽ More Cryogen-free low-temperature setups are becoming more prominent in experimental science due to their convenience and reliability, and concern about the increasing scarcity of helium as a natural resource. Despite not having any moving parts at the cold end, pulse tube cryocoolers introduce vibrations that can be detrimental to the experiments. We characterize the coupling of these vibrations to the electrical signal observed on cables installed in a cryogen-free dilution refrigerator. The dominant electrical noise is in the 5 to 10 kHz range and its magnitude is found to be strongly temperature dependent. We test the performance of different cables designed to diagnose and tackle the noise, and find triboelectrics to be the dominant mechanism coupling the vibrations to the electrical signal. Flattening a semi-rigid cable or jacketing a flexible cable in order to restrict movement within the cable, successfully reduces the noise level by over an order of magnitude. Furthermore, we characterize the effect of the pulse tube vibrations on an electron spin qubit device in this setup. Coherence measurements are used to map out the spectrum of the noise experienced by the qubit, revealing spectral components matching the spectral signature of the pulse tube. △ Less

Submitted 7 July, 2016; v1 submitted 9 March, 2016; originally announced March 2016.

Comments: 13 pages, 10 figures

Journal ref: Review of Scientific Instruments 87, 073905 (2016)

Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions

Authors: Fahd A. Mohiyaddin, Rachpon Kalra, Arne Laucht, Rajib Rahman, Gerhard Klimeck, Andrea Morello

Abstract: The ability to transport quantum information across some distance can facilitate the design and operation of a quantum processor. One-dimensional spin chains provide a compact platform to realize scalable spin transport for a solid-state quantum computer. Here, we model odd-sized donor chains in silicon under a range of experimental non-idealities, including variability of donor position within th… ▽ More The ability to transport quantum information across some distance can facilitate the design and operation of a quantum processor. One-dimensional spin chains provide a compact platform to realize scalable spin transport for a solid-state quantum computer. Here, we model odd-sized donor chains in silicon under a range of experimental non-idealities, including variability of donor position within the chain. We show that the tolerance against donor placement inaccuracies is greatly improved by operating the spin chain in a mode where the electrons are confined at the Si-SiO$_2$ interface. We then estimate the required timescales and exchange couplings, and the level of noise that can be tolerated to achieve high fidelity transport. We also propose a protocol to calibrate and initialize the chain, thereby providing a complete guideline for realizing a functional donor chain and utilizing it for spin transport. △ Less

Submitted 23 February, 2016; originally announced February 2016.

Comments: 19 pages, 12 figures

Journal ref: Phys. Rev. B 94, 045314 (2016)

Silicon quantum processor with robust long-distance qubit couplings

Authors: Guilherme Tosi, Fahd A. Mohiyaddin, Vivien Schmitt, Stefanie Tenberg, Rajib Rahman, Gerhard Klimeck, Andrea Morello

Abstract: Practical quantum computers require the construction of a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a physical platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require pre… ▽ More Practical quantum computers require the construction of a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a physical platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and allows hundreds of nanometers inter-qubit distances, therefore facilitating fabrication using current technology. All qubit operations are performed via electrical means on the electron-nuclear spin states of a phosphorus donor. Single-qubit gates use low power electric drive at microwave frequencies, while fast two-qubit gates exploit electric dipole-dipole interactions. Microwave resonators allow for millimeter-distance entanglement and interfacing with photonic links. Sweet spots protect the qubits from charge noise up to second order, implying that all operations can be performed with error rates below quantum error correction thresholds, even without any active noise cancellation technique. △ Less

Submitted 9 March, 2017; v1 submitted 28 September, 2015; originally announced September 2015.

Journal ref: Nature Communications 8, 450 (2017)

Spin-orbit coupling and operation of multi-valley spin qubits

Authors: M. Veldhorst, R. Ruskov, C. H. Yang, J. C. C. Hwang, F. E. Hudson, M. E. Flatté, C. Tahan, K. M. Itoh, A. Morello, A. S. Dzurak

Abstract: Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched silicon. Using pulsed electron spin resonance, we perform coherent control of both types of qubits, addressing them via an electric field dependent g-factor. We perform randomized benchmarking and find that both qubits can be operated with high fidelity. Surpr… ▽ More Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched silicon. Using pulsed electron spin resonance, we perform coherent control of both types of qubits, addressing them via an electric field dependent g-factor. We perform randomized benchmarking and find that both qubits can be operated with high fidelity. Surprisingly, we find that the g-factors of the one-electron and three-electron qubits have an approximately linear but opposite dependence as a function of the applied dc electric field. We develop a theory to explain this g-factor behavior based on the spin-valley coupling that results from the sharp interface. The outer "shell" electron in the three-electron qubit exists in the higher of the two available conduction-band valley states, in contrast with the one-electron case, where the electron is in the lower valley. We formulate a modified effective mass theory and propose that inter-valley spin-flip tunneling dominates over intra-valley spin-flips in this system, leading to a direct correlation between the spin-orbit coupling parameters and the g-factors in the two valleys. In addition to offering all-electrical tuning for single-qubit gates, the g-factor physics revealed here for one-electron and three-electron qubits offers potential opportunities for new qubit control approaches. △ Less

Submitted 5 May, 2015; originally announced May 2015.

Journal ref: Phys. Rev. B 92, 201401 (2015)

Bell's inequality violation with spins in silicon

Authors: Juan P. Dehollain, Stephanie Simmons, Juha T. Muhonen, Rachpon Kalra, Arne Laucht, Fay Hudson, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Andrea Morello

Abstract: Bell's theorem sets a boundary between the classical and quantum realms, by providing a strict proof of the existence of entangled quantum states with no classical counterpart. An experimental violation of Bell's inequality demands simultaneously high fidelities in the preparation, manipulation and measurement of multipartite quantum entangled states. For this reason the Bell signal has been tagge… ▽ More Bell's theorem sets a boundary between the classical and quantum realms, by providing a strict proof of the existence of entangled quantum states with no classical counterpart. An experimental violation of Bell's inequality demands simultaneously high fidelities in the preparation, manipulation and measurement of multipartite quantum entangled states. For this reason the Bell signal has been tagged as a single-number benchmark for the performance of quantum computing devices. Here we demonstrate deterministic, on-demand generation of two-qubit entangled states of the electron and the nuclear spin of a single phosphorus atom embedded in a silicon nanoelectronic device. By sequentially reading the electron and the nucleus, we show that these entangled states violate the Bell/CHSH inequality with a Bell signal of 2.50(10). An even higher value of 2.70(9) is obtained by map** the parity of the two-qubit state onto the nuclear spin, which allows for high-fidelity quantum non-demolition measurement (QND) of the parity. Furthermore, we complement the Bell inequality entanglement witness with full two-qubit state tomography exploiting QND measurement, which reveals that our prepared states match the target maximally entangled Bell states with $>$96\% fidelity. These experiments demonstrate complete control of the two-qubit Hilbert space of a phosphorus atom, and show that this system is able to maintain its simultaneously high initialization, manipulation and measurement fidelities past the single-qubit regime. △ Less

Submitted 13 April, 2015; originally announced April 2015.

Comments: 10 pages, 3 figures, 1 table, 4 extended data figures

Electrically controlling single spin qubits in a continuous microwave field

Authors: Arne Laucht, Juha T. Muhonen, Fahd A. Mohiyaddin, Rachpon Kalra, Juan P. Dehollain, Solomon Freer, Fay E. Hudson, Menno Veldhorst, Rajib Rahman, Gerhard Klimeck, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Andrea Morello

Abstract: Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electr… ▽ More Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electric field, which induces a Stark shift of the qubit energies. This method, known as A-gate control, preserves the excellent coherence times and gate fidelities of isolated spins, and can be extended to arbitrarily many qubits without requiring multiple microwave sources. △ Less

Submitted 19 March, 2015; originally announced March 2015.

Comments: Main paper: 13 pages, 4 figures. Supplementary information: 25 pages, 13 figures

Journal ref: Science Advances 1, 1500022 (2015)

A Two Qubit Logic Gate in Silicon

Authors: M. Veldhorst, C. H. Yang, J. C. C. Hwang, W. Huang, J. P. Dehollain, J. T. Muhonen, S. Simmons, A. Laucht, F. E. Hudson, K. M. Itoh, A. Morello, A. S. Dzurak

Abstract: Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates \cite{DiVincenzo2000, Loss1998}. Strong effort across several fields have led to an impressive array of qubit realizations, including trapped ions \cite{Brown2011}, superconducting circuits \cite{Barends2014}, single photons\cite{Kok200… ▽ More Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates \cite{DiVincenzo2000, Loss1998}. Strong effort across several fields have led to an impressive array of qubit realizations, including trapped ions \cite{Brown2011}, superconducting circuits \cite{Barends2014}, single photons\cite{Kok2007}, single defects or atoms in diamond \cite{Waldherr2014, Dolde2014} and silicon \cite{Muhonen2014}, and semiconductor quantum dots \cite{Veldhorst2014}, all with single qubit fidelities exceeding the stringent thresholds required for fault-tolerant quantum computing \cite{Fowler2012}. Despite this, high-fidelity two-qubit gates in the solid-state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits \cite{Barends2014}, as semiconductor systems have suffered from difficulties in coupling qubits and dephasing \cite{Nowack2011, Brunner2011, Shulman2012}. Here, we show that these issues can be eliminated altogether using single spins in isotopically enriched silicon\cite{Itoh2014} by demonstrating single- and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the original Loss-DiVincenzo proposal \cite{Loss1998}. We realize CNOT gates via either controlled rotation (CROT) or controlled phase (CZ) operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is employed in the two-qubit CZ gate. The speed of the two-qubit CZ operations is controlled electrically via the detuning energy and we find that over 100 two-qubit gates can be performed within a two-qubit coherence time of 8 \textmu s, thereby satisfying the criteria required for scalable quantum computation. △ Less

Submitted 20 November, 2014; originally announced November 2014.

Journal ref: Full details, including two-qubit readout after CNOT operation, are in the published version: Nature 526, 410-414 (2015)

Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking

Authors: J. T. Muhonen, A. Laucht, S. Simmons, J. P. Dehollain, R. Kalra, F. E. Hudson, S. Freer, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, A. Morello

Abstract: Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically p… ▽ More Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically purified 28-Si. We find average gate fidelities of 99.95 % for the electron, and 99.99 % for the nuclear spin. These values are above certain error correction thresholds, and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware, and not the intrinsic behaviour of the qubit. △ Less

Submitted 8 October, 2014; originally announced October 2014.

Journal ref: J. Phys.: Condens. Matter 27 (2015) 154205

Coherent Control of a Single Silicon-29 Nuclear Spin Qubit

Authors: Jarryd J. Pla, Fahd A. Mohiyaddin, Kuan Y. Tan, Juan P. Dehollain, Rajib Rahman, Gerhard Klimeck, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single $^{29}$Si nuclear spi… ▽ More Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single $^{29}$Si nuclear spin. The quantum non-demolition (QND) single-shot readout of the spin is demonstrated, and a Hahn echo measurement reveals a coherence time of $T_2 = 6.3(7)$ ms - in excellent agreement with bulk experiments. Atomistic modeling combined with extracted experimental parameters provides possible lattice sites for the $^{29}$Si atom under investigation. These results demonstrate that single $^{29}$Si nuclear spins could serve as a valuable resource in a silicon spin-based quantum computer. △ Less

Submitted 6 August, 2014; originally announced August 2014.

Journal ref: Phys. Rev. Lett. 113, 246801 (2014)

An addressable quantum dot qubit with fault-tolerant control fidelity

Authors: M. Veldhorst, J. C. C. Hwang, C. H. Yang, A. W. Leenstra, B. de Ronde, J. P. Dehollain, J. T. Muhonen, F. E. Hudson, K. M. Itoh, A. Morello, A. S. Dzurak

Abstract: Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges… ▽ More Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges in coupling such qubits and addressing them individually. Conversely, lithographically defined quantum dots have an exchange coupling that can be precisely engineered, but strong coupling to noise has severely limited their dephasing times and control fidelities. Here we combine the best aspects of both spin qubit schemes and demonstrate a gate-addressable quantum dot qubit in isotopically engineered silicon with a control fidelity of 99.6%, obtained via Clifford based randomized benchmarking and consistent with that required for fault-tolerant quantum computing. This qubit has orders of magnitude improved coherence times compared with other quantum dot qubits, with T_2* = 120 mus and T_2 = 28 ms. By gate-voltage tuning of the electron g*-factor, we can Stark shift the electron spin resonance (ESR) frequency by more than 3000 times the 2.4 kHz ESR linewidth, providing a direct path to large-scale arrays of addressable high-fidelity qubits that are compatible with existing manufacturing technologies. △ Less

Submitted 8 July, 2014; originally announced July 2014.

Journal ref: Nature Nanotechnology 9, 981 (2014)

Circuit-quantum electrodynamics with direct magnetic coupling to single-atom spin qubits in isotopically enriched 28Si

Authors: Guilherme Tosi, Fahd A. Mohiyaddin, Hans Huebl, Andrea Morello

Abstract: Recent advances in silicon nanofabrication have allowed the manipulation of spin qubits that are extremely isolated from noise sources, being therefore the semiconductor equivalent of single atoms in vacuum. We investigate the possibility of directly coupling an electron spin qubit to a superconducting resonator magnetic vacuum field. By using resonators modified to increase the vacuum magnetic fi… ▽ More Recent advances in silicon nanofabrication have allowed the manipulation of spin qubits that are extremely isolated from noise sources, being therefore the semiconductor equivalent of single atoms in vacuum. We investigate the possibility of directly coupling an electron spin qubit to a superconducting resonator magnetic vacuum field. By using resonators modified to increase the vacuum magnetic field at the qubit location, and isotopically purified 28Si substrates, it is possible to achieve coupling rates faster than the single spin dephasing. This opens up new avenues for circuit-quantum electrodynamics with spins, and provides a pathway for dispersive read-out of spin qubits via superconducting resonators. △ Less

Submitted 26 August, 2014; v1 submitted 6 May, 2014; originally announced May 2014.

Journal ref: AIP Advances 4, 087122 (2014)

Single-shot readout and relaxation of singlet/triplet states in exchange-coupled $^{31}$P electron spins in silicon

Authors: Juan P. Dehollain, Juha T. Muhonen, Kuan Y. Tan, André Saraiva, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: We present the experimental observation of a large exchange coupling $J \approx 300$ $μ$eV between two $^{31}$P electron spin qubits in silicon. The singlet and triplet states of the coupled spins are monitored in real time by a Single-Electron Transistor, which detects ionization from tunnel-rate-dependent processes in the coupled spin system, yielding single-shot readout fidelities above 95%. Th… ▽ More We present the experimental observation of a large exchange coupling $J \approx 300$ $μ$eV between two $^{31}$P electron spin qubits in silicon. The singlet and triplet states of the coupled spins are monitored in real time by a Single-Electron Transistor, which detects ionization from tunnel-rate-dependent processes in the coupled spin system, yielding single-shot readout fidelities above 95%. The triplet to singlet relaxation time $T_1 \approx 4$ ms at zero magnetic field agrees with the theoretical prediction for $J$-coupled $^{31}$P dimers in silicon. The time evolution of the 2-electron state populations gives further insight into the valley-orbit eigenstates of the donor dimer, valley selection rules and relaxation rates, and the role of hyperfine interactions. These results pave the way to the realization of 2-qubit quantum logic gates with spins in silicon, and highlight the necessity to adopt gating schemes compatible with weak $J$-coupling strengths. △ Less

Submitted 11 June, 2014; v1 submitted 28 February, 2014; originally announced February 2014.

Comments: Main: 5 pages, 4 figures. Supp.Mat: 1 page, 1 figure. Final version with journal reference

Journal ref: Phys. Rev. Lett. 112, 236801 (2014)

Storing quantum information for 30 seconds in a nanoelectronic device

Authors: Juha T. Muhonen, Juan P. Dehollain, Arne Laucht, Fay E. Hudson, Takeharu Sekiguchi, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Andrea Morello

Abstract: The spin of an electron or a nucleus in a semiconductor [1] naturally implements the unit of quantum information -- the qubit -- while providing a technological link to the established electronics industry [2]. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms [3], or charge and spin fluctuators in defects, oxide… ▽ More The spin of an electron or a nucleus in a semiconductor [1] naturally implements the unit of quantum information -- the qubit -- while providing a technological link to the established electronics industry [2]. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms [3], or charge and spin fluctuators in defects, oxides and interfaces [4]. For group IV materials such as silicon, enrichment of the spin-zero 28-Si isotope drastically reduces spin-bath decoherence [5]. Experiments on bulk spin ensembles in 28-Si crystals have indeed demonstrated extraordinary coherence times [6-8]. However, it remained unclear whether these would persist at the single-spin level, in gated nanostructures near amorphous interfaces. Here we present the coherent operation of individual 31-P electron and nuclear spin qubits in a top-gated nanostructure, fabricated on an isotopically engineered 28-Si substrate. We report new benchmarks for coherence time (> 30 seconds) and control fidelity (> 99.99%) of any single qubit in solid state, and perform a detailed noise spectroscopy [9] to demonstrate that -- contrary to widespread belief -- the coherence is not limited by the proximity to an interface. Our results represent a fundamental advance in control and understanding of spin qubits in nanostructures. △ Less

Submitted 28 February, 2014; originally announced February 2014.

Journal ref: Nature Nanotechnology 9, 986 (2014)

High-fidelity adiabatic inversion of a $^{31}\mathrm{P}$ electron spin qubit in natural silicon

Authors: Arne Laucht, Rachpon Kalra, Juha T. Muhonen, Juan P. Dehollain, Fahd A. Mohiyaddin, Fay Hudson, Jeffrey C. McCallum, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: The main limitation to the high-fidelity quantum control of spins in semiconductors is the presence of strongly fluctuating fields arising from the nuclear spin bath of the host material. We demonstrate here a substantial improvement in single-qubit gate fidelities for an electron spin qubit bound to a $^{31}$P atom in natural silicon, by applying adiabatic inversion instead of narrow-band pulses.… ▽ More The main limitation to the high-fidelity quantum control of spins in semiconductors is the presence of strongly fluctuating fields arising from the nuclear spin bath of the host material. We demonstrate here a substantial improvement in single-qubit gate fidelities for an electron spin qubit bound to a $^{31}$P atom in natural silicon, by applying adiabatic inversion instead of narrow-band pulses. We achieve an inversion fidelity of 97%, and we observe signatures in the spin resonance spectra and the spin coherence time that are consistent with the presence of an additional exchange-coupled donor. This work highlights the effectiveness of adiabatic inversion techniques for spin control in fluctuating environments. △ Less

Submitted 17 December, 2013; originally announced December 2013.

Comments: 4 pages, 2 figures

Robust two-qubit gates for donors in silicon controlled by hyperfine interactions

Authors: Rachpon Kalra, Arne Laucht, Charles Hill, Andrea Morello

Abstract: We present two strategies for performing two-qubit operations on the electron spins of an exchange-coupled pair of phosphorus donors in silicon, using the ability to set the donor nuclear spins in arbitrary states. The effective magnetic detuning of the two electron qubits is provided by the hyperfine interaction when the $^{31}$P nuclei are prepared in opposite spin states. This can be exploited… ▽ More We present two strategies for performing two-qubit operations on the electron spins of an exchange-coupled pair of phosphorus donors in silicon, using the ability to set the donor nuclear spins in arbitrary states. The effective magnetic detuning of the two electron qubits is provided by the hyperfine interaction when the $^{31}$P nuclei are prepared in opposite spin states. This can be exploited to switch on and off SWAP operations with modest tuning of the electron exchange interaction. Furthermore, the hyperfine detuning enables high-fidelity conditional rotation gates based on selective resonant excitation. The latter requires no dynamic tuning of the exchange interaction at all, and offers a very attractive scheme to implement two-qubit logic gates under realistic experimental conditions. △ Less

Submitted 11 December, 2013; v1 submitted 8 December, 2013; originally announced December 2013.

Comments: 8 pages, 3 figures

Journal ref: Phys. Rev. X 4, 021044 (2014)

Observation of zero-point quantum fluctuations of a single-molecule magnet through the relaxation of its nuclear spin bath

Authors: A. Morello, A. Millán, L. J. de Jongh

Abstract: A single-molecule magnet placed in a magnetic field perpendicular to its anisotropy axis can be truncated to an effective two-level system, with easily tunable energy splitting. The quantum coherence of the molecular spin is largely determined by the dynamics of the surrounding nuclear spin bath. Here we report the measurement of the nuclear spin--lattice relaxation in a single crystal of the sing… ▽ More A single-molecule magnet placed in a magnetic field perpendicular to its anisotropy axis can be truncated to an effective two-level system, with easily tunable energy splitting. The quantum coherence of the molecular spin is largely determined by the dynamics of the surrounding nuclear spin bath. Here we report the measurement of the nuclear spin--lattice relaxation in a single crystal of the single-molecule magnet Mn$_{12}$-ac, at $T \approx 30$ mK in perpendicular fields $B_{\perp}$ up to 9 T. Although the molecular spin is in its ground state, we observe an increase of the nuclear relaxation rates by several orders of magnitude up to the highest $B_{\perp}$. This unique finding is a consequence of the zero-point quantum fluctuations of the Mn$_{12}$-ac spin, which allow it to efficiently transfer energy from the excited nuclear spin bath to the lattice. Our experiment highlights the importance of quantum fluctuations in the interaction between an `effective two-level system' and its surrounding spin bath. △ Less

Submitted 6 November, 2013; originally announced November 2013.

Comments: 5 pages, 4 figures

A single-atom electron spin qubit in silicon

Authors: Jarryd J. Pla, Kuan Y. Tan, Juan P. Dehollain, Wee H. Lim, John J. L. Morton, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the NV-center point defect. Solid state electrical devices possess great potential to scale up such demonstrations from f… ▽ More A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the NV-center point defect. Solid state electrical devices possess great potential to scale up such demonstrations from few-qubit control to larger scale quantum processors. In this direction, coherent control of spin qubits has been achieved in lithographically-defined double quantum dots in both GaAs and Si. However, it is a formidable challenge to combine the electrical measurement capabilities of engineered nanostructures with the benefits inherent to atomic spin qubits. Here we demonstrate the coherent manipulation of an individual electron spin qubit bound to a phosphorus donor atom in natural silicon, measured electrically via single-shot readout. We use electron spin resonance to drive Rabi oscillations, while a Hahn echo pulse sequence reveals a spin coherence time (T2) exceeding 200 μs. This figure is expected to become even longer in isotopically enriched 28Si samples. Together with the use of a device architecture that is compatible with modern integrated circuit technology, these results indicate that the electron spin of a single phosphorus atom in silicon is an excellent platform on which to build a scalable quantum computer. △ Less

Submitted 20 May, 2013; originally announced May 2013.

Comments: 13 pages, 4 figures

Journal ref: Nature 489, 541 (2012)

Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting

Authors: C. H. Yang, A. Rossi, R. Ruskov, N. S. Lai, F. A. Mohiyaddin, S. Lee, C. Tahan, G. Klimeck, A. Morello, A. S. Dzurak

Abstract: Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we demonstrate that valley separation can be accurately tuned via electrostatic gate control in a metal-oxide-semiconductor quantum dot, providing splittings spanning… ▽ More Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we demonstrate that valley separation can be accurately tuned via electrostatic gate control in a metal-oxide-semiconductor quantum dot, providing splittings spanning 0.3 - 0.8 meV. The splitting varies linearly with applied electric field, with a ratio in agreement with atomistic tight-binding predictions. We demonstrate single-shot spin readout and measure the spin relaxation for different valley configurations and dot occupancies, finding one-electron lifetimes exceeding 2 seconds. Spin relaxation occurs via phonon emission due to spin-orbit coupling between the valley states, a process not previously anticipated for silicon quantum dots. An analytical theory describes the magnetic field dependence of the relaxation rate, including the presence of a dramatic rate enhancement (or hot-spot) when Zeeman and valley splittings coincide. △ Less

Submitted 30 May, 2013; v1 submitted 5 February, 2013; originally announced February 2013.

Comments: 17 pages, 6 figures (main manuscript and supplementary material)

Journal ref: Nature Communications 4:2069 (2013)

High-fidelity readout and control of a nuclear spin qubit in silicon

Authors: Jarryd J. Pla, Kuan Y. Tan, Juan P. Dehollain, Wee H. Lim, John J. L. Morton, Floris A. Zwanenburg, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus (31P) nuclear spin in a silicon nanostructure. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate the qu… ▽ More A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus (31P) nuclear spin in a silicon nanostructure. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate the quantum non-demolition, electrical single-shot readout of the nuclear spin, with readout fidelity better than 99.8% - the highest for any solid-state qubit. The single nuclear spin is then operated as a qubit by applying coherent radiofrequency (RF) pulses. For an ionized 31P donor we find a nuclear spin coherence time of 60 ms and a 1-qubit gate control fidelity exceeding 98%. These results demonstrate that the dominant technology of modern electronics can be adapted to host a complete electrical measurement and control platform for nuclear spin-based quantum information processing. △ Less

Submitted 31 January, 2013; originally announced February 2013.

Comments: 18 pages, 5 figures

Journal ref: Nature 496, 334 (2013)

Nanoscale broadband transmission lines for spin qubit control

Authors: J. P. Dehollain, J. J. Pla, E. Siew, K. Y. Tan, A. S. Dzurak, A. Morello

Abstract: The intense interest in spin-based quantum information processing has caused an increasing overlap between two traditionally distinct disciplines, such as magnetic resonance and nanotechnology. In this work we discuss rigourous design guidelines to integrate microwave circuits with charge-sensitive nanostructures, and describe how to simulate such structures accurately and efficiently. We present… ▽ More The intense interest in spin-based quantum information processing has caused an increasing overlap between two traditionally distinct disciplines, such as magnetic resonance and nanotechnology. In this work we discuss rigourous design guidelines to integrate microwave circuits with charge-sensitive nanostructures, and describe how to simulate such structures accurately and efficiently. We present a new design for an on-chip, broadband, nanoscale microwave line that optimizes the magnetic field driving a spin qubit, while minimizing the disturbance on a nearby charge sensor. This new structure was successfully employed in a single-spin qubit experiment, and shows that the simulations accurately predict the magnetic field values even at frequencies as high as 30 GHz. △ Less

Submitted 23 January, 2013; v1 submitted 12 August, 2012; originally announced August 2012.

Comments: 18 pages, 8 figures, 1 table, pdflatex

Journal ref: Nanotechnology 24 (2013) 015202

Silicon Quantum Electronics

Authors: Floris A. Zwanenburg, Andrew S. Dzurak, Andrea Morello, Michelle Y. Simmons, Lloyd C. L. Hollenberg, Gerhard Klimeck, Sven Rogge, Susan N. Coppersmith, Mark A. Eriksson

Abstract: This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development for both Si quantum devices, and thanks to the physical understanding of quantum effects in silicon. Recent critical steps inc… ▽ More This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development for both Si quantum devices, and thanks to the physical understanding of quantum effects in silicon. Recent critical steps include the isolation of single electrons, the observation of spin blockade and single-shot read-out of individual electron spins in both dopants and gated quantum dots in Si. Each of these results has come with physics that was not anticipated from previous work in other material systems. These advances underline the significant progress towards the realization of spin quantum bits in a material with a long spin coherence time, crucial for quantum computation and spintronics. △ Less

Submitted 16 April, 2013; v1 submitted 22 June, 2012; originally announced June 2012.

Comments: Accepted for publication in Reviews of Modern Physics. 64 pages, 62 figures

Journal ref: Rev. Mod. Phys. 85, 961 (2013)

Orbital and valley state spectra of a few-electron silicon quantum dot

Authors: C. H. Yang, W. H. Lim, N. S. Lai, A. Rossi, A. Morello, A. S. Dzurak

Abstract: Understanding interactions between orbital and valley quantum states in silicon nanodevices is crucial in assessing the prospects of spin-based qubits. We study the energy spectra of a few-electron silicon metal-oxide-semiconductor quantum dot using dynamic charge sensing and pulsed-voltage spectroscopy. The occupancy of the quantum dot is probed down to the single-electron level using a nearby si… ▽ More Understanding interactions between orbital and valley quantum states in silicon nanodevices is crucial in assessing the prospects of spin-based qubits. We study the energy spectra of a few-electron silicon metal-oxide-semiconductor quantum dot using dynamic charge sensing and pulsed-voltage spectroscopy. The occupancy of the quantum dot is probed down to the single-electron level using a nearby single-electron transistor as a charge sensor. The energy of the first orbital excited state is found to decrease rapidly as the electron occupancy increases from N=1 to 4. By monitoring the sequential spin filling of the dot we extract a valley splitting of ~230 μeV, irrespective of electron number. This indicates that favorable conditions for qubit operation are in place in the few-electron regime. △ Less

Submitted 10 October, 2012; v1 submitted 3 April, 2012; originally announced April 2012.

Comments: 4 figures

Journal ref: Phys. Rev. B 86, 115319 (2012)

Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs

Authors: Laurens H. Willems van Beveren, Hans Huebl, Andrea Morello

Abstract: We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines have been observed using radio frequency reflectometry, which is promising for high-bandwidth operation and possibly time-resolved detection of spin res… ▽ More We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines have been observed using radio frequency reflectometry, which is promising for high-bandwidth operation and possibly time-resolved detection of spin resonance in donor-based semiconductor devices. Here we present the effect of microwave (MW) power and MOSFET biasing conditions on the EDMR signals. △ Less

Submitted 6 May, 2011; originally announced May 2011.

Comments: 2 pages, 3 figures

Journal ref: Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on, 221-222 (2010)

Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot

Authors: N. S. Lai, W. H. Lim, C. H. Yang, F. A. Zwanenburg, W. A. Coish, F. Qassemi, A. Morello, A. S. Dzurak

Abstract: Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle, leading to the well-know Pauli spin blockade of electron transport for triplet states. Coherent spin states would be optimally preserved in an environment free of nu… ▽ More Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle, leading to the well-know Pauli spin blockade of electron transport for triplet states. Coherent spin states would be optimally preserved in an environment free of nuclear spins, which is achievable in silicon by isotopic purification. Here we report on a deliberately engineered, gate-defined silicon metal-oxide-semiconductor double quantum dot system. The electron occupancy of each dot and the inter-dot tunnel coupling are independently tunable by electrostatic gates. At weak inter-dot coupling we clearly observe Pauli spin blockade and measure a large intra-dot singlet-triplet splitting $>$ 1 meV. The leakage current in spin blockade has a peculiar magnetic field dependence, unrelated to electron-nuclear effects and consistent with the effect of spin-flip cotunneling processes. The results obtained here provide excellent prospects for realizing singlet-triplet qubits in silicon. △ Less

Submitted 14 April, 2011; v1 submitted 7 December, 2010; originally announced December 2010.

Comments: 6 pages, 5 figures

Journal ref: Scientific Reports 1, Article number: 110 (2011)

Electron spin decoherence in isotope-enriched silicon

Authors: Wayne M. Witzel, Malcolm S. Carroll, Andrea Morello, Lukasz Cywinski, S. Das Sarma

Abstract: Silicon is promising for spin-based quantum computation because nuclear spins, a source of magnetic noise, may be eliminated through isotopic enrichment. Long spin decoherence times, $T_2$, have been measured in isotope-enriched silicon but come far short of the $T_2 = 2 T_1$ limit. The effect of nuclear spins on $T_2$ is well established. However, the effect of background electron spins from ever… ▽ More Silicon is promising for spin-based quantum computation because nuclear spins, a source of magnetic noise, may be eliminated through isotopic enrichment. Long spin decoherence times, $T_2$, have been measured in isotope-enriched silicon but come far short of the $T_2 = 2 T_1$ limit. The effect of nuclear spins on $T_2$ is well established. However, the effect of background electron spins from ever present residual phosphorus impurities in silicon can also produce significant decoherence. We study spin decoherence decay as a function of donor concentration, $^{29}$Si concentration, and temperature using cluster expansion techniques specifically adapted to the problem of a sparse dipolarly coupled electron spin bath. Our results agree with the existing experimental spin echo data in Si:P and establish the importance of background dopants as the ultimate decoherence mechanism in isotope-enriched silicon. △ Less

Submitted 27 October, 2010; v1 submitted 13 August, 2010; originally announced August 2010.

Journal ref: Phys. Rev. Lett. 105, 187602 (2010)

Single-shot readout of an electron spin in silicon

Authors: Andrea Morello, Jarryd J. Pla, Floris A. Zwanenburg, Kok W. Chan, Hans Huebl, Mikko Mottonen, Christopher D. Nugroho, Changyi Yang, Jessica A. van Donkelaar, Andrew D. C. Alves, David N. Jamieson, Christopher C. Escott, Lloyd C. L. Hollenberg, Robert G. Clark, Andrew S. Dzurak

Abstract: The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit… ▽ More The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility to eliminate nuclear spins from the bulk crystal. However, the control of single electrons in Si has proved challenging, and has so far hindered the observation and manipulation of a single spin. Here we report the first demonstration of single-shot, time-resolved readout of an electron spin in Si. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor - compatible with current microelectronic technology. We observed a spin lifetime approaching 1 second at magnetic fields below 2 T, and achieved spin readout fidelity better than 90%. High-fidelity single-shot spin readout in Si opens the path to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry. △ Less

Submitted 24 May, 2010; v1 submitted 13 March, 2010; originally announced March 2010.

Comments: 5 pages, 4 figures

Journal ref: Nature 467, 687 (2010)

Resonant tunnelling features in the transport spectroscopy of quantum dots

Authors: C. C. Escott, F. A. Zwanenburg, A. Morello

Abstract: We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects, with a focus on the most common operating conditions. We describe several phenomena that can lead to apparently identical signatures in a bias spectroscopy measu… ▽ More We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects, with a focus on the most common operating conditions. We describe several phenomena that can lead to apparently identical signatures in a bias spectroscopy measurement, with the aim of providing experimental methods to distinguish between their different physical origins. The correct classification of the resonant tunnelling features is an essential requirement to understand the details of the confining potential or predict the performance of the dot for quantum information processing. △ Less

Submitted 10 February, 2010; originally announced February 2010.

Comments: 18 pages, 7 figures. Short review article submitted to Nanotechnology, special issue on 'Quantum Science and Technology at the Nanoscale'

Journal ref: Nanotechnology 21, 274018 (2010)

Electron tunnel rates in a donor-silicon single electron transistor hybrid

Authors: Hans Huebl, Christopher D. Nugroho, Andrea Morello, Christopher C. Escott, Mark A. Eriksson, Changyi Yang, David N. Jamieson, Robert G. Clark, Andrew S. Dzurak

Abstract: We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby centers, turning from the off state to the conducting state when the charge configuration is changed. We present a method to measure fast electron tunnel rate… ▽ More We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby centers, turning from the off state to the conducting state when the charge configuration is changed. We present a method to measure fast electron tunnel rates between donors and the SiSET island, using a pulsed voltage scheme and low-bandwidth current detection. The experimental findings are quantitatively discussed using a rate equation model, enabling the extraction of the capture and emission rates. △ Less

Submitted 12 December, 2009; originally announced December 2009.

Comments: 10 pages, 3 figures

Journal ref: Phys. Rev. B 81, 235318 (2010)

Probe and Control of the Reservoir Density of States in Single-Electron Devices

Authors: M. Mottonen, K. Y. Tan, K. W. Chan, F. A. Zwanenburg, W. H. Lim, C. C. Escott, J. -M. Pirkkalainen, A. Morello, C. Yang, J. A. van Donkelaar, A. D. C. Alves, D. N. Jamieson, L. C. L. Hollenberg, A. S. Dzurak

Abstract: We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window i… ▽ More We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window independently of the other device properties, and in agreement with the theoretical analysis. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures. △ Less

Submitted 5 October, 2009; originally announced October 2009.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 81, 161304 (2010)

Observation of the single-electron regime in a highly tunable silicon quantum dot

Authors: W. H. Lim, F. A. Zwanenburg, H. Huebl, M. Mottonen, K. W. Chan, A. Morello, A. S. Dzurak

Abstract: We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot energy levels to be probed without affecting the electron density in the leads, and vice versa. Appropriate gate biasing enables the dot occupancy to be redu… ▽ More We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot energy levels to be probed without affecting the electron density in the leads, and vice versa. Appropriate gate biasing enables the dot occupancy to be reduced to the single-electron level, as evidenced by magnetospectroscopy measurements of the ground state of the first two charge transitions. Independent gate control of the electron reservoirs also enables discrimination between excited states of the dot and density of states modulations in the leads. △ Less

Submitted 10 November, 2009; v1 submitted 3 October, 2009; originally announced October 2009.

Comments: 4 pages, 3 figures, accepted for Applied Physics Letters

Journal ref: Appl. Phys. Lett. 95, 242102 (2009) (3 pages)

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

Authors: Kuan Yen Tan, Kok Wai Chan, Mikko Möttönen, Andrea Morello, Changyi Yang, Jessica van Donkelaar, Andrew Alves, Juha-Matti Pirkkalainen, David N. Jamieson, Robert G. Clark, Andrew S. Dzurak

Abstract: We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin… ▽ More We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures. △ Less

Submitted 2 February, 2010; v1 submitted 27 May, 2009; originally announced May 2009.

Comments: 6 pages, 3 figures, journal

Journal ref: Nano Letters 10, 11 (2010)

Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon

Authors: A. Morello, C. C. Escott, H. Huebl, L. H. Willems van Beveren, L. C. L. Hollenberg, D. N. Jamieson, A. S. Dzurak, R. G. Clark

Abstract: We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of the donor electron directly into the SET island during the read-out phase. Simulations show that the charge transfer signals are typically Δq > 0.2 e - over an… ▽ More We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of the donor electron directly into the SET island during the read-out phase. Simulations show that the charge transfer signals are typically Δq > 0.2 e - over an order of magnitude larger than achievable with metallic SETs on the SiO2 surface. A complete spin-based qubit structure is obtained by adding a local Electron Spin Resonance line for coherent spin control. This architecture is ideally suited to demonstrate and study the coherent properties of donor electron spins, but can be expanded and integrated with classical control electronics in the context of scale-up. △ Less

Submitted 10 September, 2009; v1 submitted 8 April, 2009; originally announced April 2009.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 80, 081307(R) (2009)

Local Magnetic Properties of a Monolayer of Mn12 Single Molecule Magnets

Authors: Z. Salman, K. H. Chow, R. I. Miller, A. Morello, T. J. Parolin, M. D. Hossain, T. A. Keeler, C. D. P. Levy, W. A. MacFarlane, G. D. Morris, H. Saadaoui, D. Wang, R. Sessoli, G. G. Condorelli, R. F. Kiefl

Abstract: The magnetic properties of a monolayer of Mn12 single molecule magnets grafted onto a Si substrate have been investigated using depth-controlled $β$-detected nuclear magnetic resonance. A low energy beam of spin polarized radioactive 8Li was used to probe the local static magnetic field distribution near the Mn12 monolayer in the Si substrate. The resonance linewidth varies strongly as a functio… ▽ More The magnetic properties of a monolayer of Mn12 single molecule magnets grafted onto a Si substrate have been investigated using depth-controlled $β$-detected nuclear magnetic resonance. A low energy beam of spin polarized radioactive 8Li was used to probe the local static magnetic field distribution near the Mn12 monolayer in the Si substrate. The resonance linewidth varies strongly as a function of implantation depth as a result of the magnetic dipolar fields generated by the Mn12 electronic magnetic moments. The temperature dependence of the linewidth indicates that the magnetic properties of the Mn12 moments in this low dimensional configuration differ from bulk Mn12. △ Less

Submitted 30 April, 2008; originally announced April 2008.

Comments: 6 pages, 4 figures

Journal ref: Nano Lett., 7 (6), 1551 -1555, 2007

Quantum nanomagnets and nuclear spins: an overview

Authors: Andrea Morello

Abstract: This mini-review presents a simple and accessible summary on the fascinating physics of quantum nanomagnets coupled to a nuclear spin bath. These chemically synthesized systems are an ideal test ground for the theories of decoherence in mesoscopic quantum degrees of freedom, when the coupling to the environment is local and not small. We shall focus here on the most striking quantum phenomenon t… ▽ More This mini-review presents a simple and accessible summary on the fascinating physics of quantum nanomagnets coupled to a nuclear spin bath. These chemically synthesized systems are an ideal test ground for the theories of decoherence in mesoscopic quantum degrees of freedom, when the coupling to the environment is local and not small. We shall focus here on the most striking quantum phenomenon that occurs in such nanomagnets, namely the tunneling of their giant spin through a high anisotropy barrier. It will be shown that perturbative treatments must be discarded, and replaced by a more sophisticated formalism where the dynamics of the nanomagnet and the nuclei that couple to it are treated together from the beginning. After a critical review of the theoretical predictions and their experimental verification, we continue with a set of experimental results that challenge our present understanding, and outline the importance of filling also this last gap in the theory. △ Less

Submitted 4 December, 2007; originally announced December 2007.

Comments: 14 pages, 3 figures. Chapter in the Proceedings of the 2006 Les Houches summer school "Quantum Magnetism", ed. B. Barbara & Y. Imry, Springer (2007)

Dynamics and thermalization of the nuclear spin bath in the single-molecule magnet Mn12-ac: test for the theory of spin tunneling

Authors: Andrea Morello, L. J. de Jongh

Abstract: The description of the tunneling of a macroscopic variable in the presence of a bath of localized spins is a subject of great fundamental and practical interest, and is relevant for many solid-state qubit designs. Instead of focusing on the the "central spin" (as is most often done), here we present a detailed study of the dynamics of the nuclear spin bath in the Mn12-ac single-molecule magnet,… ▽ More The description of the tunneling of a macroscopic variable in the presence of a bath of localized spins is a subject of great fundamental and practical interest, and is relevant for many solid-state qubit designs. Instead of focusing on the the "central spin" (as is most often done), here we present a detailed study of the dynamics of the nuclear spin bath in the Mn12-ac single-molecule magnet, probed by NMR experiments down to very low temperatures (T = 20 mK). We find that the longitudinal relaxation rate of the 55Mn nuclei in Mn12-ac becomes roughly T-independent below T = 0.8 K, and can be strongly suppressed with a longitudinal magnetic field. This is consistent with the nuclear relaxation being caused by quantum tunneling of the molecular spin, and we attribute the tunneling fluctuations to the minority of fast-relaxing molecules present in the sample. The transverse nuclear relaxation is also T-independent for T < 0.8 K, and can be explained qualitatively and quantitatively by the dipolar coupling between like nuclei in neighboring molecules. We also show that the isotopic substitution of 1H by 2H leads to a slower nuclear longitudinal relaxation, consistent with the decreased tunneling probability of the molecular spin. Finally, we demonstrate that, even at the lowest temperatures, the nuclear spins remain in thermal equilibrium with the lattice phonons, and we investigate the timescale for their thermal equilibration. After a review of the theory of macroscopic spin tunneling in the presence of a spin bath, we argue that most of our experimental results are consistent with that theory, but the thermalization of the nuclear spins is not. △ Less

Submitted 4 December, 2007; v1 submitted 19 June, 2007; originally announced June 2007.

Comments: 24 pages, 18 figures. Experimental study of the spin bath dynamics in quantum nanomagnets, plus an extensive review and application of the theory

Journal ref: Phys. Rev. B 76, 184425 (2007)

Pair-wise decoherence in coupled spin qubit networks

Authors: Andrea Morello, P. C. E. Stamp, Igor S. Tupitsyn

Abstract: Experiments involving phase coherent dynamics of networks of spins, such as echo experiments, will only work if decoherence can be suppressed. We show here, by analyzing the particular example of a crystalline network of Fe8 molecules, that most decoherence typically comes from pairwise interactions (particularly dipolar interactions) between the spins, which cause `correlated errors'. However a… ▽ More Experiments involving phase coherent dynamics of networks of spins, such as echo experiments, will only work if decoherence can be suppressed. We show here, by analyzing the particular example of a crystalline network of Fe8 molecules, that most decoherence typically comes from pairwise interactions (particularly dipolar interactions) between the spins, which cause `correlated errors'. However at very low T these are strongly suppressed. These results have important implications for the design of quantum information processing systems using electronic spins. △ Less

Submitted 12 December, 2006; v1 submitted 29 May, 2006; originally announced May 2006.

Comments: 4 pages, 4 figures. Final PRL version

Journal ref: Phys. Rev. Lett. 97, 207206 (2006)

Magnetic dipolar ordering and relaxation in the high-spin molecular cluster compound Mn6

Authors: A. Morello, F. L. Mettes, O. N. Bakharev, H. B. Brom, L. J. de Jongh, F. Luis, J. F. Fernandez, G. Aromi

Abstract: Few examples of magnetic systems displaying a transition to pure dipolar magnetic order are known to date, and single-molecule magnets can provide an interesting example. The molecular cluster spins and thus their dipolar interaction energy can be quite high, leading to reasonably accessible ordering temperatures, provided the crystal field anisotropy is sufficiently small. This condition can be… ▽ More Few examples of magnetic systems displaying a transition to pure dipolar magnetic order are known to date, and single-molecule magnets can provide an interesting example. The molecular cluster spins and thus their dipolar interaction energy can be quite high, leading to reasonably accessible ordering temperatures, provided the crystal field anisotropy is sufficiently small. This condition can be met for molecular clusters of sufficiently high symmetry, as for the Mn6 compound studied here. Magnetic specific heat and susceptibility experiments show a transition to ferromagnetic dipolar order at T_{c} = 0.16 K. Classical Monte-Carlo calculations indeed predict ferromagnetic ordering and account for the correct value of T_{c}. In high magnetic fields we detected the contribution of the ^{55}Mn nuclei to the specific heat, and the characteristic timescale of nuclear relaxation. This was compared with results obtained directly from pulse-NMR experiments. The data are in good mutual agreement and can be well described by the theory for magnetic relaxation in highly polarized paramagnetic crystals and for dynamic nuclear polarization, which we extensively review. The experiments provide an interesting comparison with the recently investigated nuclear spin dynamics in the anisotropic single molecule magnet Mn12-ac. △ Less

Submitted 10 April, 2006; v1 submitted 9 September, 2005; originally announced September 2005.

Comments: 19 pages, 11 eps figures. Contains extensive discussions on dipolar ordering, specific heat and nuclear relaxation in molecular magnets

Journal ref: Phys. Rev. B 73, 134406 (2006)

An automated and versatile ultra-low temperature SQUID magnetometer

Authors: A. Morello, W. G. J. Angenent, G. Frossati, L. J. de Jongh

Abstract: We present the design and construction of a SQUID-based magnetometer for operation down to temperatures T = 10 mK, while retaining the compatibility with the sample holders typically used in commercial SQUID magnetometers. The system is based on a dc-SQUID coupled to a second-order gradiometer. The sample is placed inside the plastic mixing chamber of a dilution refrigerator and is thermalized d… ▽ More We present the design and construction of a SQUID-based magnetometer for operation down to temperatures T = 10 mK, while retaining the compatibility with the sample holders typically used in commercial SQUID magnetometers. The system is based on a dc-SQUID coupled to a second-order gradiometer. The sample is placed inside the plastic mixing chamber of a dilution refrigerator and is thermalized directly by the 3He flow. The movement though the pickup coils is obtained by lifting the whole dilution refrigerator insert. A home-developed software provides full automation and an easy user interface. △ Less

Submitted 22 June, 2004; originally announced June 2004.

Comments: RevTex, 10 pages, 10 eps figures. High-resolution figures available upon request

Journal ref: Rev. Sci. Instrum. 76, 023902 (2005)