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Carrier Confinement in GaN/AlGaN Nanowire Heterostructures for 0 < x <= 1
Authors:
F. Furtmayr,
J. Teubert,
P. Becker,
S. Conesa-Boj,
J. R. Morante,
J. Arbiol,
A. Chernikov,
S. Schäfer,
S. Chatterjee,
M. Eickhoff
Abstract:
The three dimensional carrier confinement in GaN nanodiscs embedded in GaN/AlGaN nanowires and its effect on their photoluminescence properties is analyzed for Al concentrations between x = 0.08 and 1. Structural analysis by high resolution transmission electron microscopy reveals the presence of a lateral AlGaN shell due to a composition dependent lateral growth rate of the barrier material. The…
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The three dimensional carrier confinement in GaN nanodiscs embedded in GaN/AlGaN nanowires and its effect on their photoluminescence properties is analyzed for Al concentrations between x = 0.08 and 1. Structural analysis by high resolution transmission electron microscopy reveals the presence of a lateral AlGaN shell due to a composition dependent lateral growth rate of the barrier material. The structural properties are used as input parameters for three dimensional numerical simulations of the confinement which show that the presence of the AlGaN shell has to be considered to explain the observed dependence of the emission energy on the Al concentration in the barrier. The simulations reveal that the maximum in the emission energy for x ~ 30% is assigned to the smallest lateral strain gradient and consequently the lowest radial internal electric fields in the nanodiscs. Higher Al-concentrations in the barrier cause high radial electric fields that can overcome the exciton binding energy and result in substantially reduced emission intensities. Effects of polarization-induced axial internal electric fields on the photoluminescence characteristics have been investigated using nanowire samples with nanodisc heights ranging between 1.2 nm and 3.5 nm at different Al concentrations. The influence of the quantum confined Stark effect is significantly reduced compared to GaN/AlGaN quantum well structures which is attributed to the formation of misfit dislocations at the heterointerfaces which weakens the internal electric polarization fields.
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Submitted 15 September, 2011;
originally announced September 2011.
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Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
Authors:
Martin Heiß,
Sonia Conesa-Boj,
Jun Ren,
Hsiang-Han Tseng,
Adam Gali,
Andreas Rudolph,
Emanuele Uccelli,
Francesca Peiro,
Joan Ramon Morante,
Dieter Schuh,
Elisabeth Reiger,
Efthimios Kaxiras,
Jordi Arbiol,
Anna Fontcuberta i Morral
Abstract:
A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In…
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A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In the polytypic nanowires, it is shown that the regions that are predominantly composed of either zinc-blende or wurtzite phase show photoluminescence emission close to the bulk GaAs band gap, while regions composed of a nonperiodic superlattice of wurtzite and zinc-blende phases exhibit a redshift of the photoluminescence spectra as low as 1.455 eV. The dimensions of the quantum heterostructures are correlated with the light emission, allowing us to determine the band alignment between these two crystalline phases. Our first-principles electronic structure calculations within density functional theory, employing a hybrid-exchange functional, predict band offsets and effective masses in good agreement with experimental results.
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Submitted 23 November, 2010;
originally announced November 2010.
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Group-III assisted catalyst-free growth of InGaAs nanowires and the formation of quantum dots
Authors:
Martin Heiß,
Bernt Ketterer,
Emanuele Uccelli,
Joan Ramon Morante,
Jordi Arbiol,
Anna Fontcuberta i Morral
Abstract:
Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550°C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and elec…
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Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550°C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and electron energy loss spectroscopy. The results show that the incorporation of indium lowering the growth temperature does not have an effect in increasing the indium concentration in the bulk of the nanowire, which is limited to 3-5%. For growth temperatures below 575°C, indium rich regions form at the surface of the nanowires as a consequence of the radial growth. This results in the formation of quantum dots, which exhibit extremely sharp luminescence.
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Submitted 23 November, 2010;
originally announced November 2010.
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Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules and strain effects
Authors:
I. Zardo,
S. Conesa-Boj,
F. Peiro,
J. R. Morante,
J. Arbiol,
E. Uccelli,
G. Abstreiter,
A. Fontcuberta i Morral
Abstract:
Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E1(TO) at 267 cm-1 exhibits the highest intensity when the incident and analyzed polarization ar…
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Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E1(TO) at 267 cm-1 exhibits the highest intensity when the incident and analyzed polarization are parallel to the nanowire axis. This is a consequence of the nanowire geometry and dielectric mismatch with the environment, and in quite good agreement with the Raman selection rules. We also find a consistent splitting of 1 cm-1 of the E1(TO). The transversal optical mode related to the wurtzite structure, E2H, is measured between 254 and 256 cm-1, depending on the wurtzite content. The azymutal dependence of E2H indicates that the mode is excited with the highest efficiency when the incident and analyzed polarization are perpendicular to the nanowire axis, in agreement with the selection rules. The presence of strain between wurtzite and zinc-blende is analyzed by the relative shift of the E1(TO) and E2H modes. Finally, the influence of the surface roughness in the intensity of the longitudinal optical mode on {110} facets is presented.
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Submitted 7 December, 2009; v1 submitted 27 October, 2009;
originally announced October 2009.
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Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires
Authors:
D. Spirkoska,
J. Arbiol,
A. Gustafsson,
S. Conesa-Boj,
F. Glas,
I. Zardo,
M. Heigoldt,
M. H. Gass,
A. L. Bleloch,
S. Estrade,
M. Kaniber,
J. Rossler,
F. Peiro,
J. R. Morante,
L. Samuelson,
G. Abstreiter,
A. Fontcuberta i Morral
Abstract:
The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.5…
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The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band-offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms.
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Submitted 9 July, 2009;
originally announced July 2009.
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Linear and Non Linear Behaviour of Mechanical Resonators for Optimized Inertial Electromagnetic Microgenerators
Authors:
C. Serre,
A. Pérez-Rodrigueza,
N. Fondevilla,
E. Martincic,
J. R. Morante,
J. Montserrat,
J. Esteve
Abstract:
The need for wearable or abandoned microsystems, as well as the trend to a lower power consumption of electronic devices, make miniaturized renewable energy generators a viable alternative to batteries. Among the different alternatives, an interesting option is the use of inertial microgenerators for energy scavenging from vibrations present in the environment. These devices constitute perpetual…
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The need for wearable or abandoned microsystems, as well as the trend to a lower power consumption of electronic devices, make miniaturized renewable energy generators a viable alternative to batteries. Among the different alternatives, an interesting option is the use of inertial microgenerators for energy scavenging from vibrations present in the environment. These devices constitute perpetual energy sources without the need for refilling, thus being well suited for abandoned sensors, wireless systems or microsystems which must be embedded within the structure, without outside physical connections. Different electromagnetic energy scavenging devices have been described in the literature [1,2,3], based on the use of a velocity damped resonator, which is well suited for harvesting of vibrational energy induced by the operation of machines. These vibrations are characterized by a well defined frequency (in the range between few Hz's and few kHz's) and low displacement amplitudes. Adjusting the resonant frequency of the system to that of the vibrations allows amplification of these low amplitude displacements. Moreover, for these applications, the use of an electromagnetic device has the potential advantages of a good level of compatibility with Si Microsystem technology, as well as the possibility of relatively high electromechanical coupling with simple designs.
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Submitted 7 May, 2008;
originally announced May 2008.
