-
Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy
Authors:
P. Aseev,
Ž. Gačević,
J. M. Mánuel,
J. J. Jiménez,
R. García,
F. M. Morales,
E. Calleja
Abstract:
This work presents an experimental and theoretical insight into formation mechanisms of single crystalline wurtzite InN quantum dots (QDs) fabricated via metal droplet epitaxy (DE) by employing plasma assisted molecular beam epitaxy. The applied procedure consists of two fabrication stages. During the first stage, the cold substrate (T = 15 °C) is exposed to an im**ing In flux, resulting in form…
▽ More
This work presents an experimental and theoretical insight into formation mechanisms of single crystalline wurtzite InN quantum dots (QDs) fabricated via metal droplet epitaxy (DE) by employing plasma assisted molecular beam epitaxy. The applied procedure consists of two fabrication stages. During the first stage, the cold substrate (T = 15 °C) is exposed to an im**ing In flux, resulting in formation of metallic In droplets on the substrate surface, and then to an im**ing active nitrogen flux, resulting in In conversion into polycrystalline InN islands. During the second stage, the substrate, which is still kept exposed to active nitrogen, is heated up to T = 300 °C, to allow for the reorganization of extended polycrystalline InN islands into groups of independent single crystalline wurtzite InN QDs. This work provides a detailed experimental insight into both fabrication stages and their qualitative explanations within the scopes of adatom surface kinetics (stage I) and total energy per unit crystal volume minimization (stage II). Finally, the formation mechanisms of InN QDs on the three different substrates (Si(111), Si(001) and In0.3Ga0.7N/Si(111)) are compared, and also linked to the formation mechanisms of other more studied nanostructures, such as self assembled GaN/AlN QDs and self assembled and selective area grown GaN nanowires.
△ Less
Submitted 31 January, 2024;
originally announced February 2024.
-
Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging
Authors:
Piu Rajak,
Mahabul Islam,
J. J. Jiménez,
J. M. Mánuel,
P. Aseev,
Ž. Gačević,
E. Calleja,
R. García,
Francisco M. Morales,
Somnath Bhattacharyya
Abstract:
InN quantum dots (QDs) are considered to be promising nanostructures for different device applications. For any hexagonal AB stacking semiconductor system, polarity is an important feature which affects the electronic properties. Therefore, the determination of this characteristic on any wurtzite (semi)polar III nitride compound or alloy is essential for defining its applicability. In this paper,…
▽ More
InN quantum dots (QDs) are considered to be promising nanostructures for different device applications. For any hexagonal AB stacking semiconductor system, polarity is an important feature which affects the electronic properties. Therefore, the determination of this characteristic on any wurtzite (semi)polar III nitride compound or alloy is essential for defining its applicability. In this paper, the polarity of InN QDs grown on silicon by indium droplet epitaxy plus nitridation and annealing was determined by a modified approach combining exit wave reconstruction with negative spherical aberration high resolution lattice imaging using TEM. Comparing the micrographs of two QDs from the same TEM specimen with the simulated images of InN slab structures generated under the same conditions as of the experiments, it was confirmed that the QDs of the present study are N polar. Given that the settlement of material's polarity has always been a tedious, indirect and controversial issue, the major value of our proposal is to provide a straightforward procedure to determine the polar direction from atomic-resolution focal series images.
△ Less
Submitted 31 January, 2024;
originally announced February 2024.
-
Optical and nanostructural insights of oblique angle deposited layers applied for photononic coatings
Authors:
Florian Maudet,
Bertrand Lacroix,
Antonio J. Santos,
Fabien Paumier,
Maxime Paraillous,
Simon Hurand,
Alan Corvisier,
Cecile Marsal,
Baptiste Giroire,
Cyril Dupeyrat,
Rafael García,
Francisco M. Morales,
Thierry Girardeau
Abstract:
Oblique angle deposition (OAD) is a nanostructuration method widely used to tune the optical properties of thin films. The introduction of porosity controlled by the deposition angle is used to develop the architecture of each layer and stack that enable modifying and optimizing the optical properties of the constituent layers for optimal design. However, optical properties of these nanostructured…
▽ More
Oblique angle deposition (OAD) is a nanostructuration method widely used to tune the optical properties of thin films. The introduction of porosity controlled by the deposition angle is used to develop the architecture of each layer and stack that enable modifying and optimizing the optical properties of the constituent layers for optimal design. However, optical properties of these nanostructured layers may differ greatly from those of dense layers due to the presence of anisotropy, refractive index gradient and scattering. This work focuses on OAD layers based on a reference photonic material such as SiO2 and it aims at taking into account all these effects in the description of the optical response. For that, the nanostructure has been analyzed with a complete SEM study and key parameters like the porosity gradient profile and aspect ratio of the nanocolumns were extracted. The samples were then characterized by generalized ellipsometry to evaluate the influence of morphological anisotropy and porosity gradient on the optical response of the films. Based on this microstructural study, an original optical model is presented to fit the features of new optical properties. A reliable correspondence is observed between the optical model parameters and the microstructure characteristics like the column angle and the porosity gradient. This demonstrates that such complex microstructural parameters can be easily accessed solely from optical measurements. All the work has enabled us to develop a two-layer anti-reflective coating that already demonstrate high level of transmission.
△ Less
Submitted 18 December, 2019;
originally announced December 2019.
-
On the importance of light scattering for high performances nanostructured antireflective surfaces
Authors:
Florian Maudet,
Bertrand Lacroix,
Antonio J. Santos,
Fabien Paumier,
Maxime Paraillous,
Simon Hurand,
Alan Corvisier,
Cyril Dupeyrat,
Rafael García,
Francisco M. Morales,
Thierry Girardeau
Abstract:
An antireflective coating presenting a continuous refractive index gradient is theoretically better than its discrete counterpart because it can give rise to a perfect broadband transparency. This kind of surface treatment can be obtained with nanostructures like moth-eye. Despite the light scattering behavior must be accounted as it can lead to a significant transmittance drop, no methods are act…
▽ More
An antireflective coating presenting a continuous refractive index gradient is theoretically better than its discrete counterpart because it can give rise to a perfect broadband transparency. This kind of surface treatment can be obtained with nanostructures like moth-eye. Despite the light scattering behavior must be accounted as it can lead to a significant transmittance drop, no methods are actually available to anticipate scattering losses in such nanostructured antireflective coatings. To overcome this current limitation, we present here an original way to simulate the scattering losses in these systems and routes to optimize the transparency. This method, which was validated by a comparative study of coatings presenting refractive indices with either discrete or continuous gradient, shows that a discrete antireflective coating bilayer made by oblique angle deposition allows reaching ultra-high mean transmittance of 98.97% over the broadband [400-1800] nm. Such simple surface treatment outperforms moth-eye architectures thanks to both interference effect and small dimensions nanostructures that minimize the scattering losses as confirmed by finite-difference time domain simulations performed on reconstructed volumes obtained from electron tomography experiments.
△ Less
Submitted 14 June, 2019;
originally announced June 2019.
-
A Bond Consistent Derivative Fair Value
Authors:
Johan Gunnesson,
Alberto Fernández Muñoz de Morales
Abstract:
In this paper we present a rigorously motivated pricing equation for derivatives, including general cash collateralization schemes, which is consistent with quoted market bond prices. Traditionally, there have been differences in how instruments with similar cash flow structures have been priced if their definition falls under that of a financial derivative versus if they correspond to bonds, lead…
▽ More
In this paper we present a rigorously motivated pricing equation for derivatives, including general cash collateralization schemes, which is consistent with quoted market bond prices. Traditionally, there have been differences in how instruments with similar cash flow structures have been priced if their definition falls under that of a financial derivative versus if they correspond to bonds, leading to possibilities such as funding through derivatives transactions. Furthermore, the problem has not been solved with the recent introduction of Funding Valuation Adjustments in derivatives pricing, and in some cases has even been made worse.
In contrast, our proposed equation is not only consistent with fixed income assets and liabilities, but is also symmetric, implying a well-defined exit price, independent of the entity performing the valuation. Also, we provide some practical proxies, such as first-order approximations or basing calculations of CVA and DVA on bond curves, rather than Credit Default Swaps.
△ Less
Submitted 19 September, 2014; v1 submitted 22 June, 2014;
originally announced June 2014.
-
Recovering from Derivatives Funding: A consistent approach to DVA, FVA and Hedging
Authors:
Johan Gunnesson,
Alberto Fernández Muñoz de Morales
Abstract:
The inclusion of DVA in the fair-value of derivative transactions has now become standard accounting practice in most parts of the world. Furthermore, some sophisticated banks are including an FVA (Funding Valuation Adjustment), but since DVA can be interpreted as a funding benefit the oft-debated issue regarding a possible double-counting of funding benefits arises, with little consensus as to it…
▽ More
The inclusion of DVA in the fair-value of derivative transactions has now become standard accounting practice in most parts of the world. Furthermore, some sophisticated banks are including an FVA (Funding Valuation Adjustment), but since DVA can be interpreted as a funding benefit the oft-debated issue regarding a possible double-counting of funding benefits arises, with little consensus as to its resolution. One possibility is to price the derivative by replication, guaranteeing a consistent inclusion of costs and benefits. However, as has recently been noted, DVA is (at least partially) unhedgeable, having no exact market hedge. Furthermore, current frameworks shed little light on the controversial question, raised by Hull (2012), of whether the effect a derivative has on the riskiness of an institution's debt should be taken into account when calculating FVA.
In this paper we propose a solution to these two problems by identifying an instrument, a fictitious CDS written on the hedging counterparty which is implicitly contained in any given derivatives transaction. This allows us to show that the hedger's unhedged jump-to-default risk has, despite not being actively managed, a well defined value associated to a funding benefit. Carrying out the replication including such a CDS, we obtain a price for the derivative consisting of its collateralized equivalent, a contingent CVA, a contingent DVA, and an FVA, coupled to the price via the hedger's short-term bond-CDS basis.
The resulting funding cost is non-zero, but substantially smaller than what is obtained in alternative approaches due to the effect the derivative has on the recovery of the hedger's liabilities. Also, price agreement is possible for two sophisticated counterparties entering a deal if their bond-CDS bases obey a certain relationship, similar to what was first obtained by Morini and Prampolini (2010).
△ Less
Submitted 19 April, 2014; v1 submitted 5 March, 2014;
originally announced March 2014.
-
Phase map** of aging process in InN nanostructures: oxygen incorporation and the role of the zincblende phase
Authors:
D. Gonzalez,
J. G. Lozano,
M. Herrera,
F. M. Morales,
S. Ruffenach,
O. Briot,
R. Garcia
Abstract:
Uncapped InN nanostructures undergo a deleterious natural aging process at ambient conditions by oxygen incorporation. The phases involved in this process and their localization is mapped by Transmission Electron Microscopy (TEM) related techniques. The parent wurtzite InN (InN-w) phase disappears from the surface and gradually forms a highly textured cubic layer that completely wraps up a InN-w…
▽ More
Uncapped InN nanostructures undergo a deleterious natural aging process at ambient conditions by oxygen incorporation. The phases involved in this process and their localization is mapped by Transmission Electron Microscopy (TEM) related techniques. The parent wurtzite InN (InN-w) phase disappears from the surface and gradually forms a highly textured cubic layer that completely wraps up a InN-w nucleus which still remains from original single-crystalline quantum dots. The good reticular relationships between the different crystals generate low misfit strains and explain the apparent easiness for phase transformations at room temperature and pressure conditions, but also disable the classical methods to identify phases and grains from TEM images. The application of the geometrical phase algorithm in order to form numerical moire map**s, and RGB multilayered image reconstructions allows to discern among the different phases and grains formed inside these nanostructures. Samples aged for shorter times reveal the presence of metastable InN:O zincblende (zb) volumes, which acts as the intermediate phase between the initial InN-w and the most stable cubic In2O3 end phase. These cubic phases are highly twinned with a proportion of 50:50 between both orientations. We suggest that the existence of the intermediate InN:O-zb phase should be seriously considered to understand the reason of the widely scattered reported fundamental properties of thought to be InN-w, as its bandgap or superconductivity.
△ Less
Submitted 23 November, 2009;
originally announced November 2009.
