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Surface acoustic wave lasing in a silicon optomechanical cavity
Authors:
J. Zhang,
P. Nuño-Ruano,
X. Le Roux,
M. Montesinos-Ballester,
D. Marris-Morini,
E. Cassan,
L. Vivien,
N. D. Lanzillotti-Kimura,
C. Alonso-Ramos
Abstract:
Integrated optomechanical cavities stand as a promising means to interface mechanical motion and guided optical modes. State-of-the-art demonstrations rely on optical and mechanical modes tightly confined of in micron-scale areas to achieve strong optomechanical coupling. However, the need for tight optomechanical confinement and the general use of suspended devices hinders interaction with extern…
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Integrated optomechanical cavities stand as a promising means to interface mechanical motion and guided optical modes. State-of-the-art demonstrations rely on optical and mechanical modes tightly confined of in micron-scale areas to achieve strong optomechanical coupling. However, the need for tight optomechanical confinement and the general use of suspended devices hinders interaction with external devices, limiting the potential for the implementation of complex circuits. Here, we propose and demonstrate a new approach for optomechanical cavities coupling free-propagating surface acoustic waves (SAWs) and guided optical modes. The cavity is formed by a periodic array of silicon nanopillars with subwavelength separation, implemented in silicon-on-insulator substrate. Optical pum** yields a strong radiation pressure that drives the harmonic vibration of the pillars, periodically deforming the silica under-cladding and exciting the SAW. The propagation of the SAW deforms the cavity period, modulating the resonance wavelength to close the optomechanical coupling loop. Based on this concept, we experimentally demonstrate a phonon laser at room temperature and ambient conditions with optical pump power as low as 1 mW. We also show the possibility to cascade this process, achieving a frequency comb generation with more than 30 harmonic lines. These results open a new path to achieve strong bidirectional coupling between integrated waveguides and SAW, with a great potential for a wide range of applications in quantum and classical domains.
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Submitted 11 March, 2022;
originally announced March 2022.
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Dispersive wave control enabled by silicon metamaterial waveguides
Authors:
T. T. D. Dinh,
X. Le Roux,
M. Montesinos-Ballester,
C. Lafforgue,
J. Zhang,
D. González-Andrade,
D. Melati,
D. Bouville,
D. Benedikovic,
P. Cheben,
E. Cassan,
D. Marris-Morini,
L. Vivien,
C. Alonso-Ramos
Abstract:
The ability to exploit the on-chip nonlinear generation of new frequencies has opened the door to a plethora of applications in fundamental and applied physics. Excitation of dispersive waves is a particularly interesting process that allows efficient nonlinear wavelength conversion by phase-matching of a soliton and waves in the normal dispersion regime. However, controlling the wavelength of dis…
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The ability to exploit the on-chip nonlinear generation of new frequencies has opened the door to a plethora of applications in fundamental and applied physics. Excitation of dispersive waves is a particularly interesting process that allows efficient nonlinear wavelength conversion by phase-matching of a soliton and waves in the normal dispersion regime. However, controlling the wavelength of dispersive waves in integrated waveguides remains an open challenge, hampering versatile sha** of the nonlinear spectral response. Here, we show that metamaterial silicon waveguides release new degrees of freedom to select the wavelength of dispersive waves. Based on this concept, we experimentally demonstrate excitation of two dispersive waves near 1.55 μm and 7.5 μm allowing ultra-wideband supercontinuum generation, covering most of the silicon transparency window. These results stand as an important milestone for versatile nonlinear frequency generation in silicon chips, with a great potential for applications in sensing, metrology and communications.
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Submitted 17 January, 2022;
originally announced January 2022.
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Mid-infrared Fourier-transform spectrometer based on metamaterial lateral cladding suspended silicon waveguides
Authors:
Thi Thuy Duong Dinh,
Xavier Le Roux,
Natnicha Koompai,
Daniele Melati,
Miguel Montesinos-Ballester,
David González-Andrade,
Pavel Cheben,
Aitor V. Velasco,
Eric Cassan,
Delphine Marris-Morini,
Laurent Vivien,
Carlos Alonso-Ramos
Abstract:
Integrated mid-infrared micro-spectrometers have a great potential for applications in environmental monitoring and space exploration. Silicon-on-insulator (SOI) is a promising platform to tackle this integration challenge, due to its unique capability for large volume and low-cost production of ultra-compact photonic circuits. However, the use of SOI in the mid-infrared is restricted by the stron…
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Integrated mid-infrared micro-spectrometers have a great potential for applications in environmental monitoring and space exploration. Silicon-on-insulator (SOI) is a promising platform to tackle this integration challenge, due to its unique capability for large volume and low-cost production of ultra-compact photonic circuits. However, the use of SOI in the mid-infrared is restricted by the strong absorption of the buried oxide layer for wavelengths beyond 4 μm. Here, we overcome this limitation by utilizing metamaterial-cladded suspended silicon waveguides to implement a spatial heterodyne Fourier-transform (SHFT) spectrometer operating near 5.5μm wavelength. The metamaterial-cladded geometry allows removal of the buried oxide layer, yielding measured propagation loss below 2 dB/cm between 5.3μm and 5.7μm wavelengths. The SHFT spectrometer comprises 19 Mach-Zehnder interferometers with a maximum arm length imbalance of 200 μm, achieving a measured spectral resolution of 13cm-1 and a free-spectral range of 100 cm-1 near 5.5μm wavelength.
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Submitted 3 December, 2021;
originally announced December 2021.
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Sha** the modal confinement in silicon nanophotonic waveguides through dual-metamaterial engineering
Authors:
T. T. D. Dinh,
X. Le Roux,
J. Zhang,
M. Montesinos-Ballester,
C. Lafforgue,
D. Benedikovic,
P. Cheben,
E. Cassan,
D. Marris-Morini,
L. Vivien,
C Alonso-Ramos
Abstract:
Flexible control of the modal confinement in silicon photonic waveguides is an appealing feature for many applications, including sensing and hybrid integration of active materials. In most cases, strip waveguides are the preferred solution to maximize the light interaction with the waveguide surroundings. However, the only two degrees of freedom in Si strip waveguides are the width and thickness,…
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Flexible control of the modal confinement in silicon photonic waveguides is an appealing feature for many applications, including sensing and hybrid integration of active materials. In most cases, strip waveguides are the preferred solution to maximize the light interaction with the waveguide surroundings. However, the only two degrees of freedom in Si strip waveguides are the width and thickness, resulting in limited flexibility in evanescent field control. Here, we propose and demonstrate a new strategy that exploits metamaterial engineering of the waveguide core and cladding to control the index contrast in the vertical and horizontal directions, independently. The proposed dual-material geometry yields a substantially increased calculated overlap with the air (0.35) compared to the best-case scenario for a strip waveguide (0.3). To experimentally demonstrate the potential of this approach, we have implemented dual-metamaterial ring resonators, operating with the transverse-magnetic polarized mode in 220-nm-thick waveguides with air as upper-cladding. Micro-ring resonators implemented with strip and dual-metamaterial waveguides exhibit the same measured quality factors, near 30,000. Having similar measured quality factors and better calculated external confinement factors than strip waveguides, the proposed dual-metamaterial geometry stands as a promising approach to control modal confinement in silicon waveguides.
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Submitted 31 May, 2021;
originally announced May 2021.
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Generating 10-GHz phonons in nanostructured silicon membrane optomechanical cavity
Authors:
Jianhao Zhang,
Xavier Le Roux,
Miguel Montesinos-Ballester,
Omar Ortiz,
Delphine Marris-Morini,
Eric Cassan,
Laurent Vivien,
Norberto Daniel Lanzillotti-Kimura,
Carlos Alonso-Ramos
Abstract:
Flexible control of photons and phonons in silicon nanophotonic waveguides is a key feature for emerging applications in communications, sensing and quantum technologies. Strong phonon leakage towards the silica under-cladding hampers optomechanical interactions in silicon-on-insulator. This limitation has been circumvented by totally or partially removing the silica under-cladding to form pedesta…
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Flexible control of photons and phonons in silicon nanophotonic waveguides is a key feature for emerging applications in communications, sensing and quantum technologies. Strong phonon leakage towards the silica under-cladding hampers optomechanical interactions in silicon-on-insulator. This limitation has been circumvented by totally or partially removing the silica under-cladding to form pedestal or silicon membrane waveguides. Remarkable optomechanical interactions have been demonstrated in silicon using pedestal strips, membrane ribs, and photonic/phononic crystal membrane waveguides. Still, the mechanical frequencies are limited to the 1-5 GHz range. Here, we exploit the periodic nanostructuration in Si membrane gratings to shape GHz phononic modes and near-infrared photonic modes, achieving ultrahigh mechanical frequency (10 GHz) and strong photon-phonon overlap (61.5%) simultaneously. Based on this concept, we experimentally demonstrate a one-dimension optomechanical micro-resonator with a high mechanical frequency of 10 GHz and a quality factor of 1000. These results were obtained at room temperature and ambient conditions with an intracavity optical power below 1 mW, illustrating the efficient optical driving of the mechanical mode enabled by the proposed approach.
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Submitted 26 March, 2021;
originally announced March 2021.
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Silicon-on-insulator optomechanical microresonator with tight photon and phonon confinement
Authors:
Jianhao Zhang,
Xavier Le Roux,
Miguel Montesinos-Ballester,
Omar Ortiz,
Delphine Marris-Morini,
Laurent Vivien,
Norberto Daniel Lanzillotti-Kimura,
Carlos Alonso-Ramos
Abstract:
The implementation of optomechanical devices in silicon-on-insulator (SOI), the canonical silicon photonics technology is seriously hampered by the strong phonon leakage into the silica under-cladding. This limitation has been partially circumvented by total or partial removal of the silica under-cladding to form Si membranes or pedestal waveguides. However, this approach complicates integration w…
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The implementation of optomechanical devices in silicon-on-insulator (SOI), the canonical silicon photonics technology is seriously hampered by the strong phonon leakage into the silica under-cladding. This limitation has been partially circumvented by total or partial removal of the silica under-cladding to form Si membranes or pedestal waveguides. However, this approach complicates integration with standard silicon optoelectronics circuitry, limiting the versatility and application of the strategy. Here, we propose and demonstrate a new strategy to confine photons and phonons in SOI without removing the silica under-cladding. Inspired by end-fire antenna arrays, we implement a periodic nanostructuration of silicon that simultaneously enables cancelling phonon leakage by destructive interference and guiding of photons by metamaterial index confinement. Based on this concept, we implement SOI optomechanical micro-resonators yielding remarkable optomechanical coupling (go=49 kHz) between 0.66 GHz mechanical modes and near-infrared optical modes. The mechanical mode exhibits a measured quality factor of Qm = 730, the largest reported for SOI optomechanical resonators, without silica removal. This value compares favorably with state-of-the-art Si membrane waveguides recently used to demonstrate remarkable Brillouin interactions in silicon (Qm ~ 700). These results open a new path for develo** optomechanics in SOI without the need for silica removal, allowing seamless co-integration with current Si optoelectronics circuits, with a great potential for applications in communications, sensing, metrology, and quantum technologies.
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Submitted 16 March, 2021; v1 submitted 15 March, 2021;
originally announced March 2021.
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Optical modulation in Ge-rich SiGe waveguides in the mid-IR wavelength range up to 11 um
Authors:
Miguel Montesinos-Ballester,
Vladyslav Vakarin,
Joan Manel Ramirez,
Qiankun Liu,
Carlos Alonso-Ramos,
Xavier Le Roux,
Jacopo Frigerio,
Andrea Ballabio,
Andrea Barzaghi,
Lucas Deniel,
David Bouville,
Laurent Vivien,
Giovanni Isella,
Delphine Marris-Morini
Abstract:
Waveguide integrated optical modulators in the mid-infrared (mid-IR) wavelength range are of significant interest for molecular spectroscopy in one hand, as on-chip synchronous detection can improve the performance of detection systems, and for free-space communications on the other hand, where optical modulators working in the atmospheric transparency windows are crucially missing. Here we report…
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Waveguide integrated optical modulators in the mid-infrared (mid-IR) wavelength range are of significant interest for molecular spectroscopy in one hand, as on-chip synchronous detection can improve the performance of detection systems, and for free-space communications on the other hand, where optical modulators working in the atmospheric transparency windows are crucially missing. Here we report for the first time the demonstration of optical modulation in mid-IR photonic circuit reaching wavelengths larger than 8 um. Moreover, optical modulation in an unprecedented wavelength range, from 5.5 to 11 um wavelength is shown, relying on a broadband Ge-rich graded-SiGe platform. This first demonstration is used as a proof of concept, to experimentally confirm the free-carrier absorption effect modeling. These results pave the way towards efficient high-performance electrically-driven integrated optical modulators in the mid-IR wavelength range.
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Submitted 25 November, 2019;
originally announced November 2019.
